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WO2022039062A1 - Method for manufacturing printed wiring board - Google Patents

Method for manufacturing printed wiring board Download PDF

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Publication number
WO2022039062A1
WO2022039062A1 PCT/JP2021/029460 JP2021029460W WO2022039062A1 WO 2022039062 A1 WO2022039062 A1 WO 2022039062A1 JP 2021029460 W JP2021029460 W JP 2021029460W WO 2022039062 A1 WO2022039062 A1 WO 2022039062A1
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WO
WIPO (PCT)
Prior art keywords
copper plating
layer
electrolytic copper
via hole
plating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/029460
Other languages
French (fr)
Japanese (ja)
Inventor
公幸 野原
利徳 佐藤
慎也 喜多村
洋一 中島
豪志 信國
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yonezawa Dia Electronics Co inc
MGC Electrotechno Co Ltd
Original Assignee
Yonezawa Dia Electronics Co inc
MGC Electrotechno Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yonezawa Dia Electronics Co inc, MGC Electrotechno Co Ltd filed Critical Yonezawa Dia Electronics Co inc
Priority to KR1020237005193A priority Critical patent/KR102918497B1/en
Priority to JP2022543890A priority patent/JPWO2022039062A1/ja
Priority to CN202180056317.5A priority patent/CN116076159A/en
Publication of WO2022039062A1 publication Critical patent/WO2022039062A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/422Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/423Plated through-holes or plated via connections characterised by electroplating method
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4623Manufacturing multilayer circuits by laminating two or more circuit boards the circuit boards having internal via connections between two or more circuit layers before lamination, e.g. double-sided circuit boards

Definitions

  • the present invention relates to a method for manufacturing a printed wiring board that forms a via hole by a laser.
  • Printed wiring boards are being miniaturized by using a CO 2 laser, for example, in the formation of via holes in the build-up method.
  • Examples of the method for forming a via hole using a CO 2 laser include the following methods. First, an insulating layer and a conductive layer are formed in this order on an inner layer substrate on which an inner layer circuit is formed, a dry film is laminated on the surface of the conductive layer, and then the dry film is exposed and developed to form a hole for forming a via hole. To form.
  • the conductive layer is etched using a dry film as an etching resist to form holes for forming via holes in the conductive layer, and then the conductive layer is used as a mask for laser to form via holes in the insulating layer with a CO 2 laser.
  • Patent Document 1 In the method described in Patent Document 1, first, a conductor pattern is formed on an insulating substrate, an insulating resin layer is formed on the conductor pattern, the surface of the insulating resin layer is roughened, and the surface of the insulating resin layer is electroless. Form a copper plating film. Next, a photosensitive resin layer is formed on the electroless copper plating film, and the photosensitive resin layer is exposed and developed to form a plating resist for forming a via hole, leaving a portion for forming a via hole.
  • an electrolytic copper plating film having holes for forming via holes is formed on the electrolytic copper plating film, and after removing the plating resist, the electrolytic copper plating film is used as an etching resist for etching. A hole for forming a via hole is formed in the electroless copper plating film.
  • a via hole is formed in the insulating resin layer with a CO 2 laser.
  • an electrolytic copper plating film that serves as a mask for a laser is formed by using a plating resist for forming a via hole, so that there is a problem of overetching unlike the case where a hole for forming a via hole is formed by etching. It is possible to reduce the diameter of the via hole.
  • the present invention has been made based on such a problem, and provides a method for manufacturing a printed wiring board capable of reducing the hole diameter of a via hole and improving the formability of a conductor pattern. With the goal.
  • the present inventors formed a multilayer plate by laminating an insulating layer and an electrolytic copper foil in this order on an inner layer substrate on which an inner layer circuit was formed, and then removed the electrolytic copper foil from the multilayer plate.
  • the present invention is as follows. [1] A process of laminating an insulating layer and an electrolytic copper foil in this order on an inner layer substrate on which an inner layer circuit is formed to form a multilayer board. A step of removing the electrolytic copper foil from the multilayer plate to expose the insulating layer, After exposing the insulating layer, a step of providing an electroless copper plating layer on the surface of the insulating layer, and A step of providing a resist layer on the electroless copper plating layer and performing exposure and development to form a resist pattern in which a portion forming a via hole is left.
  • a method for manufacturing a printed wiring board which comprises a step of forming a via hole by removing a portion of the insulating layer not covered with the mask by a laser after forming the mask.
  • the method for manufacturing a printed wiring board according to [1] wherein the average value of the top diameter of the via hole is 25 ⁇ m or less.
  • the method for manufacturing a printed wiring board according to [1] which comprises a step of removing scum after forming the resist pattern and before providing the electrolytic copper plating layer.
  • the insulating layer and the electrolytic copper foil are laminated in this order on the inner layer substrate on which the inner layer circuit is formed to form a multilayer board, and then the electrolytic copper foil is removed from the multilayer board.
  • the surface shape of the electrolytic copper foil can be transferred to the surface of the insulating layer, and the variation in the surface roughness of the insulating layer can be reduced.
  • an electroless plating layer is provided on the surface of the insulating layer, a resist pattern is formed on which a portion forming a via hole is left, and then an electrolytic plating layer is provided, and this electrolytic plating layer is used as an etching resist for electroless plating. Since the layer is etched to form a mask for forming a via hole, the problem of over-etching can be avoided. Therefore, the diameter of the via hole can be reduced, and the formability of the conductor pattern can be improved.
  • the present embodiment will be described in detail, but the present invention is not limited thereto, and various modifications are made without departing from the gist thereof. Is possible.
  • the inner layer circuit 12 is formed on the insulating substrate 11 to form the inner layer substrate 13 (inner layer substrate forming step).
  • the inner layer substrate 13 can be manufactured by a conventionally known method. To explain the manufacturing process of the inner layer substrate 13 by giving an example, for example, first, a through hole (not shown) is formed in an insulating substrate 11 made of a resin substrate such as a glass epoxy type or a polyimide type, and the upper and lower parts of the insulating substrate 11 are formed.
  • Electrolytic copper plating is performed on both sides and the inner peripheral surface of the through hole using electroless copper plating as a base.
  • a resist pattern is formed on the surface, a conductor pattern 12a and a through-hole conductor (not shown) are formed as an inner layer circuit 12 by etching, and the hollow portion of the through-hole conductor is filled with a hole-filling resin such as epoxy to make it flat. To become.
  • the insulating layer 14 and the electrolytic copper foil 15 are laminated in this order on the inner layer substrate 13 to form the multilayer plate 16 (multilayer plate forming step).
  • an insulating prepreg or a resin sheet is laminated as an insulating layer 14 on an inner layer substrate 13, and an electrolytic copper foil 15 is laminated on the insulating prepreg or a resin sheet and pressure-bonded.
  • the prepreg include a semi-cured state in which a fibrous reinforcing material such as glass cloth or carbon fiber is impregnated with a thermosetting resin mixed with additives such as a curing agent and a coloring material.
  • the resin sheet examples include those obtained by semi-curing a thermosetting resin mixed with additives such as a curing agent and a coloring material.
  • the thermosetting resin used for the prepreg or the resin sheet include a polyimide resin, a liquid crystal polyester, an epoxy compound, a cyanate ester compound, a maleimide compound, a phenol compound, a polyphenylene ether compound, a benzoxazine compound, an organic group-modified silicone compound and polymerization. Examples include compounds having possible unsaturated groups.
  • the multilayer plate 16 for example, a copper foil with a resin layer having an insulating resin layer formed on the electrolytic copper foil 15 is used, the resin layer is used as the insulating layer 14, and the resin layer is brought into contact with the inner layer substrate 13. It may be formed by laminating and crimping. Examples of the material constituting the resin layer include the same materials as the above-mentioned prepreg or resin sheet.
  • the multilayer board 16 is formed by, for example, applying a liquid resin such as an insulating epoxy on the inner layer substrate 13 with a spin coater or the like and then heat-curing to form an insulating layer 14, and an electrolytic copper foil 15 is formed on the insulating layer 14. May be laminated and crimped.
  • the thickness of the insulating layer 14 is preferably, for example, 5 ⁇ m to 40 ⁇ m.
  • the thickness of the electrolytic copper foil 15 is preferably, for example, 1 ⁇ m to 20 ⁇ m.
  • crimping for example, a prepreg or a resin sheet is placed above and below (front and back) of the inner layer substrate, and laminated molding is performed at a pressure of 3.0 MPa and a temperature of 220 ° C. for 60 minutes. As a result, the surface shape of the electrolytic copper foil 15 is transferred to the surface of the insulating layer 14.
  • the surface roughness Ra of the electrolytic copper foil 15 on the insulating layer 14 side is preferably 0.01 ⁇ m to 2.0 ⁇ m, and the maximum height roughness Rz of the electrolytic copper foil 15 on the insulating layer 14 side is 0.5 ⁇ m. It is preferably 10.0 ⁇ m.
  • the electrolytic copper foil 15 is completely removed from the multilayer plate 16 by etching or the like, and the insulating layer 14 is exposed on the entire surface (electrolytic copper foil removing step).
  • the aqueous solution used as the etching solution is not particularly limited, and examples thereof include those using hydrochloric acid and cupric chloride aqueous solution, and those using sulfuric acid and hydrogen peroxide aqueous solution.
  • an electroless copper plating layer 17 having a thickness of, for example, 0.4 ⁇ m to 2 ⁇ m is formed on the surface of the insulating layer 14 by electroless copper plating (electroless copper plating step).
  • electroless copper plating for example, an alkaline bath using formaldehyde as a reducing agent is used.
  • a dry film is heat-bonded onto the electrolytic copper plating layer 17 to provide a resist layer so that only the portion of the via hole 21 formed in the subsequent step remains. Is exposed and developed to form a resist pattern 18 in which a portion forming a via hole 21 is left (resist pattern forming step).
  • the laminating of the resist layer is 50 ° C. to 140 ° C.
  • the crimping pressure is 1 kgf / cm 2 to 15 kgf / cm 2
  • the crimping time is 5 seconds to 300 seconds.
  • a predetermined portion of the resist layer is irradiated with active energy rays to perform exposure to cure the resist layer in the irradiated portion.
  • Irradiation of the active energy rays may be performed through a mask pattern, or a direct drawing method of directly irradiating the active energy rays may be used.
  • the active energy ray include ultraviolet rays, visible rays, electron beams, and X-rays, and ultraviolet rays are particularly desirable.
  • the irradiation amount of ultraviolet rays is approximately 10 mJ / cm 2 to 1000 mJ / cm 2 .
  • the development after exposure is not particularly limited as long as it elutes the unexposed portion in a limited manner, but a developing solution such as an alkaline aqueous solution, an aqueous developer, or an organic solvent is used.
  • a developing method for example, a known method such as spraying, rocking dipping, brushing, scraping or the like can be used.
  • the thickness of the resist pattern 18 (that is, the thickness of the resist layer) is thicker than the thickness of the electrolytic plating layer 19 formed in the subsequent step, and is preferably 5 ⁇ m to 20 ⁇ m, for example.
  • scum resist residue
  • plasma cleaning or the like scum removing step
  • the resist pattern 18 is used as a plating resist, and the surface of the electroless copper plating layer 17 is subjected to electrolytic copper plating, for example, electrolytic copper plating having a thickness of 1 ⁇ m to 10 ⁇ m.
  • the layer 19 is formed (electrolytic copper plating step). Specifically, for example, the plating treatment is performed at a bath temperature of 22 ° C. and a current density of 1.0 A / dm 2 .
  • the plating solution composition is, for example, a mixed solution of copper sulfate (for example, 120 g / L), sulfuric acid (for example, 80 g / L) and chloride ion (for example, 50 mg / L), and an appropriate amount of additives is added.
  • the additive include a method using a polyether compound (polymer), an organic sulfur compound (Brightener) and a quaternized amine compound (leveler).
  • the resist pattern is removed using a resist stripping solution or the like (resist pattern removing step).
  • the electrolytic copper plating layer 19 is used as an etching resist, and the electrolytic copper plating layer 17 is etched by flash etching or the like to etch the electrolytic copper plating layer 17.
  • a mask 20 for forming a via hole composed of the 17 and the electrolytic copper plating layer 19 is formed (mask forming step).
  • a specific etching method for example, a known method such as spraying, rocking dipping, or the like can be used.
  • the liquid composition include a method using an aqueous solution of sulfuric acid and hydrogen peroxide.
  • a portion of the insulating layer 14 that is not covered with the mask 20 is subjected to a CO 2 laser or the like.
  • the via hole 21 is formed by removing it with the laser of the above (via hole forming step).
  • the conditions of the CO 2 laser used are narrowed down to a beam diameter of 1 ⁇ m to 50 ⁇ m.
  • the laser processing of the via hole 21 is performed until the conductor pattern 12a under the insulating layer 14 is exposed. Thereby, the hole diameter of the via hole 21 can be reduced, and for example, the top diameter of the formed via hole 21 can be set to 25 ⁇ m or less on average.
  • the top diameter of the via hole 21 is the hole diameter on the surface side when the via hole 21 is formed.
  • the via conductor 22 is formed in the via hole 21, and the conductor pattern 23 is formed on the insulating layer 14 (via conductor / conductor pattern forming step). Specifically, for example, the via conductor 22 and the conductor pattern 23 are formed by electroless copper plating and via-filling copper plating on the mask 20 and the via hole 21 composed of the electrolytic copper plating layer and the electrolytic copper plating layer.
  • the insulating layer 14 and the electrolytic copper foil 15 are laminated in this order on the inner layer substrate 13 on which the inner layer circuit 12 is formed to form the multilayer plate 16, and then the multilayer plate 16 is formed. Since the electrolytic copper foil 15 is removed from the surface, the surface shape of the electrolytic copper foil 15 can be transferred to the surface of the insulating layer 14, and the variation in the surface roughness of the insulating layer 14 can be reduced. Further, an electrolytic plating layer 17 is provided on the surface of the insulating layer 14, a resist pattern 18 is formed on the resist pattern 18 in which a portion forming a via hole 21 is left, and then an electrolytic plating layer 19 is provided, and the electrolytic plating layer 19 is provided.
  • the electroless plating layer 17 is etched as an etching resist to form a mask 20 for forming a via hole, the problem of overetching can be avoided. Therefore, the diameter of the via hole 21 can be reduced, and the formability of the conductor pattern 23 can be improved.
  • Example 1 A printed wiring board was produced as follows (see FIGS. 1 to 3).
  • the inner layer circuit 12 was formed on both sides of a glass cloth base material BT resin copper-clad laminate (conductor thickness 12 ⁇ m, thickness 0.1 mm, CCL-HL832NS manufactured by Mitsubishi Gas Chemical Company, Inc.) by a subtractive method.
  • BT resin copper-clad laminate conductor thickness 12 ⁇ m, thickness 0.1 mm, CCL-HL832NS manufactured by Mitsubishi Gas Chemical Company, Inc.
  • a chemical solution of MEC Co., Ltd. was used to roughen the copper surface of the inner layer substrate 13.
  • the inner layer substrate 13 was washed with CA5330, the copper surface was roughened with CZ8101 after washing with water, and after washing with water, rust was prevented with CL8300 and dried with water.
  • the etching amount of CZ8101 was 1 ⁇ m.
  • a horizontal line spray device was used to roughen the copper surface.
  • the mask 20 for forming the via hole is formed by using the SAP (Semi Adaptive Process) method. Therefore, first, the electrolytic copper foil 15 on the surface layer of the multilayer plate 16 was removed by etching with hydrochloric acid and a cupric chloride aqueous solution at a liquid temperature of 48 ° C., and then washed and dried with water.
  • the device used was a horizontal line spray type (manufactured by Tokyo Kakoki Co., Ltd.).
  • FIG. 1 (E) A dry film resist was laminated on the electroless copper plating layer 17, and exposed and developed to form a resist pattern 18.
  • the dry film resist used was RD-1207 of Hitachi Kasei Kogyo Co., Ltd. with a thickness of 7 ⁇ m, and the laminator used was an ONC device.
  • the laminating pressure was 0.4 MPa and the laminating temperature was 110 ° C.
  • a potassium carbonate aqueous solution was used for development after exposure.
  • the equipment of Tokyo Kakoki Co., Ltd. was used at a liquid temperature of 30 ° C.
  • the copper plating bath temperature was 22 ° C., and Okuno Pharmaceutical Industry's Top Lucina SF was used as an additive for levelers, brioners, and polymers.
  • As the copper plating bath a mixed solution of copper sulfate, sulfuric acid and hydrochloric acid was used.
  • the multilayer plate 16 was racked on the plating jig, and the swelling tank, the etching tank, and the neutralization tank were immersed and rocked to remove smears.
  • the equipment of Almex PE Co., Ltd. was used for the immersion swing.
  • the chemical solution used was an up-death process manufactured by C. Uyemura & Co., Ltd. Updes MDS-37 was used as the swelling solution, Updes MDE-40 and ELC-SH mixed solution was used as the etching solution, and Updes MDN-62 was used for neutralization.
  • the temperature of the etching tank was 80 ° C., and the etching tank was immersed for 10 minutes.
  • the copper plating bath temperature was 22 ° C.
  • CU-BRITE TH4 a filling liquid for through holes manufactured by Roam & Haas Electronic Materials Co., Ltd., was used as an additive for a leveler, a brioner, and a polymer.
  • As the copper plating bath a mixed solution of copper sulfate, sulfuric acid and hydrochloric acid was used.
  • Comparative Example 1 A printed wiring board was produced as follows. 4 and 5 show each step of the method for manufacturing a printed wiring board according to Comparative Example 1.
  • the inner layer circuit 112 was formed on both sides of a glass cloth base material BT resin copper-clad laminate (copper body thickness 12 ⁇ m, thickness 0.1 mm, CCL-HL832NS manufactured by Mitsubishi Gas Chemical Company, Inc.) by a subtractive method.
  • BT resin copper-clad laminate copper body thickness 12 ⁇ m, thickness 0.1 mm, CCL-HL832NS manufactured by Mitsubishi Gas Chemical Company, Inc.
  • a chemical solution of MEC Co., Ltd. was used to roughen the copper surface of the inner layer substrate 113.
  • the copper surface was roughened with CZ8101 and the etching amount was set to 1 ⁇ m.
  • a horizontal line spray device was used to roughen the copper surface.
  • the mask 120 for forming the via hole is formed by using the subtractive method.
  • a resist layer was formed on the upper and lower sides (front and back) of the multilayer plate 116 with a dry film resist, and exposed and developed to form a resist pattern 118.
  • the dry film resist used was RD-1215 manufactured by Hitachi Chemical Industries, Ltd. with a thickness of 15 ⁇ m, and the laminator used was an ONC device.
  • the laminating pressure was 0.4 MPa and the laminating temperature was 110 ° C.
  • the exposure used INPREX3650 of Adtech Engineering Co., Ltd. A potassium carbonate aqueous solution was used for development after exposure.
  • the ultrathin copper foil 115 was etched to form the mask 120, and the resist pattern 118 was removed. Etching was performed with hydrochloric acid and an aqueous solution of cupric chloride. R-100S of Mitsubishi Gas Chemical Company, Inc. was used for peeling the resist pattern 118. A spray-type device manufactured by Tokyo Kakoki Co., Ltd. was used for the processes from development to etching and peeling.
  • CU-BRITE TH4 a filling liquid for through holes manufactured by Roam & Haas Electronic Materials Co., Ltd., was used as an additive for levelers, brighteners, and polymers.
  • As the copper plating bath a mixed solution of copper sulfate, sulfuric acid and hydrochloric acid was used.
  • Comparative Example 2 A printed wiring board was produced as follows. In Comparative Example 2, the same reference numerals are used for the components corresponding to those of the first embodiment (the present embodiment).
  • the inner layer substrate 13 is manufactured and the copper surface of the inner layer substrate 13 is roughened, and then Ajinomoto Co., Inc. resin is used as an insulating layer 14 on the upper and lower sides (front and back) of the inner layer substrate 13.
  • a sheet (GX92) was placed.
  • the inner layer substrate 13 on which the insulating layer 14 is arranged is laminated with a vacuum laminator of Nikko Material Co., Ltd. under the conditions of a temperature of 100 ° C. and a laminating pressure of about 7 kgf, dried at 150 ° C. for 30 minutes, and then attached to the inner layer substrate 13.
  • the insulating layer 14 was laminated to form a multilayer board.
  • the mask 20 for forming the via hole is formed by using the SAP method.
  • the multilayer plate was racked on the Desmia jig, and the immersion and rocking were performed in the expansion tank, the etching tank, and the neutralization tank.
  • An apparatus of Almex PE Co., Ltd. for immersion rocking was used.
  • the chemical solution used was an up-death process manufactured by C. Uyemura & Co., Ltd.
  • the desmear temperature conditions were swelling 70 ° C., etching 80 ° C., and neutralization 40 ° C..
  • the desmear treatment at this time was performed not for the purpose of removing smear in the laser hole, but for the purpose of improving the adhesion of the electroless copper plating by roughening the surface of the resin sheet surface and increasing the peel strength.
  • the multilayer plate was racked on the plating jig and immersed and rocked in the electroless copper plating tank to form the electroless copper plating layer 17.
  • an apparatus of Almex PE Co., Ltd. was used for immersion rocking.
  • the chemical solution used was a mixture of Sulcup PEA manufactured by C. Uyemura & Co., Ltd. and formaldehyde.
  • the liquid temperature of the electroless copper plating was set to 36 ° C., and the immersion was shaken for 20 minutes.
  • a dry film resist was laminated on the electroless copper plating layer 17, and exposed and developed to form a resist pattern 18.
  • the dry film resist used was RD-1215 manufactured by Hitachi Chemical Industries, Ltd. with a thickness of 15 ⁇ m, and the laminator used was an ONC device.
  • the laminating pressure was 0.4 MPa and the laminating temperature was 110 ° C.
  • the multilayer plate was racked on the plating jig, and the swelling tank, the etching tank, and the neutralization tank were immersed and rocked to remove smears.
  • An apparatus of Almex PE Co., Ltd. for immersion rocking was used.
  • the chemical solution used was an up-death process manufactured by C. Uyemura & Co., Ltd. Updes MDS-37 was used as the swelling solution, Updes MDE-40 and ELC-SH mixed solution was used as the etching solution, and Updes MDN-62 was used for neutralization.
  • the temperature of the etching tank was 80 ° C., and the etching tank was immersed for 10 minutes.
  • the copper plating bath temperature was 22 ° C.
  • CU-BRITE TH4 a filling liquid for through holes manufactured by Roam & Haas Electronic Materials Co., Ltd., was used as an additive for a leveler, a brioner, and a polymer.
  • As the copper plating bath a mixed solution of copper sulfate, sulfuric acid and hydrochloric acid was used.
  • Example 1 (Characteristic evaluation) The characteristics of Example 1 and Comparative Examples 1 and 2 were measured by the following methods.
  • Example 1 As Example 1, after preparing the inner layer substrate 13, roughening the copper surface of the inner layer substrate 13, laminating treatment for forming the multilayer plate 16, total etching of the surface layer copper, and forming the electroless copper plating layer 17. An electrolytic copper plating layer 19 was formed on the electrolytic copper plating layer 17, and a test piece was obtained. Further, as Comparative Example 1, a test piece was obtained by manufacturing the inner layer substrate 113, roughening the copper surface of the inner layer substrate 113, and laminating for forming the multilayer plate 116.
  • Comparative Example 2 after the inner layer substrate 13 is manufactured, the copper surface of the inner layer substrate 13 is roughened, the insulating layer 14 is laminated and molded, the insulating layer 14 is roughened, and the electrolytic-free copper plating layer 17 is formed. An electrolytic copper plating layer 19 was formed on the electrolytic copper plating layer 17, and a test piece was obtained. Twenty test pieces were prepared for each of Example 1 and Comparative Examples 1 and 2. The peel strength was measured for each test piece, and the average value of the peel strength and the variation in the peel strength were obtained. For the peel strength, the lower layer of the test piece was fixed to a plate or the like, the end of the plating layer was pulled perpendicular to the direction of the fixed plate, and the load value required for peeling was measured. The results obtained are shown in Table 1.
  • Example 1 [Evaluation of surface roughness]
  • the insulating layer 14 and the electrolytic copper foil 15 were laminated on the inner layer substrate 13 to form a multilayer plate 16, and then the electrolytic copper foil 15 was removed, and the surface roughness of the insulating layer 14 was measured.
  • the insulating layer 114 and the electrolytic copper foil 115 were laminated on the inner layer substrate 113 to form a multilayer plate 116, and then the electrolytic copper foil 115 was removed, and the surface roughness of the insulating layer 114 was measured.
  • the insulating layer 14 was laminated on the inner layer substrate 13 and subjected to desmear treatment, and then the surface roughness of the insulating layer 14 was measured. The surface roughness was measured by using a laser microscope Co., Ltd. KEYENCE VK-X1000 and adjusting the magnification to 150 times. As surface roughness parameters, Ra value and Rz value were measured at 10 points each.
  • the SAP method of Example 1 was able to process a smaller diameter than the subtractive method of Comparative Example 1, and the degree of variation was small. Further, in the evaluation of the peel strength, the SAP method of Example 1 had a smaller variation in the peel strength than the SAP method with desmear of Comparative Example 2. Further, in the evaluation of the surface roughness, the SAP method of Example 1 has a large variation in the surface roughness Ra and the value and the variation of the surface roughness Rz are larger than those of the SAP method with desmear in Comparative Example 2. rice field. That is, according to this embodiment, it was found that the hole diameter of the via hole can be reduced and the formability of the conductor pattern can be improved.
  • the hole diameter of the via hole can be reduced and the formability of the conductor pattern can be improved. It can be effectively used as a manufacturing method for printed wiring boards that support high integration and high density of communication equipment.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

[Problem] To provide a method for manufacturing a printed wiring board whereby the hole diameter of a via hole can be reduced and formability of a conductor pattern can be improved. [Solution] An insulation layer 14 and an electrolytic copper foil 15 are laminated in this order on an inner layer substrate 13, after which the electrolytic copper foil 15 is removed. Next, an electroless copper plating layer 17 is provided on the surface of the insulation layer 14, and a resist pattern 18 is formed thereon, the resist pattern 18 leaving a portion where a via hole is formed. Next, the resist pattern 18 is used as a plating resist, an electrolytic copper plating layer is provided on the surface of the electroless copper plating layer 17, and the resist pattern 18 is removed, after which the electroless copper plating layer 17 is etched by using the electrolytic copper plating layer as an etching resist, and a mask for via hole formation is formed. After the mask is formed, a portion, of the insulation layer 14, not covered by the mask is removed by using a laser, and the via hole is formed.

Description

プリント配線板の製造方法Manufacturing method of printed wiring board

 本発明は、レーザーによりバイアホールを形成するプリント配線板の製造方法に関する。 The present invention relates to a method for manufacturing a printed wiring board that forms a via hole by a laser.

 近年、半導体素子の小型化、高性能化に加え、半導体素子を搭載するプリント配線板の高密度化、多層化、バイアホールの小径化、高精度化が不可欠となっている。プリント配線板では、例えば、ビルドアップ工法におけるバイアホールの形成においてCOレーザーを用いることにより微細化が進められている。COレーザーを用いてバイアホールを形成する方法としては、例えば、次のような方法が挙げられる。まず、内層回路を形成した内層基板の上に、絶縁層及び導電層をこの順に形成し、導電層の表面にドライフィルムをラミネートした後、ドライフィルムを露光、現像して、バイアホール形成用孔を形成する。次いで、ドライフィルムをエッチングレジストとして導電層をエッチングし、導電層にバイアホール形成用孔を形成した後、導電層をレーザー用のマスクとして、COレーザーで絶縁層にバイアホールを形成する。 In recent years, in addition to miniaturization and high performance of semiconductor elements, it has become indispensable to increase the density of printed wiring boards on which semiconductor elements are mounted, to increase the number of layers, to reduce the diameter of via holes, and to increase the accuracy. Printed wiring boards are being miniaturized by using a CO 2 laser, for example, in the formation of via holes in the build-up method. Examples of the method for forming a via hole using a CO 2 laser include the following methods. First, an insulating layer and a conductive layer are formed in this order on an inner layer substrate on which an inner layer circuit is formed, a dry film is laminated on the surface of the conductive layer, and then the dry film is exposed and developed to form a hole for forming a via hole. To form. Next, the conductive layer is etched using a dry film as an etching resist to form holes for forming via holes in the conductive layer, and then the conductive layer is used as a mask for laser to form via holes in the insulating layer with a CO 2 laser.

 しかし、この方法では、レーザー用のマスクとなる導電層にバイアホール形成用孔をエッチングで形成する際に、過エッチングにより、導電層のバイアホール形成用孔の孔径がドライフィルムのバイアホール形成用孔の孔径よりも大きくエッチングされてしまう。そのため、小径化に限界があり、近年の小径化に十分に対応することが難しいという問題があった。そこで、より孔径の小さいバイアホールを形成する方法が提案されている(例えば、特許文献1参照)。 However, in this method, when a hole for forming a via hole is formed in the conductive layer as a mask for a laser by etching, the hole diameter of the hole for forming a via hole in the conductive layer is changed by etching to form a via hole in a dry film. It will be etched larger than the hole diameter. Therefore, there is a limit to the reduction in diameter, and there is a problem that it is difficult to sufficiently cope with the recent reduction in diameter. Therefore, a method for forming a via hole having a smaller hole diameter has been proposed (see, for example, Patent Document 1).

 特許文献1に記載の方法では、まず、絶縁基板上に導体パターンを形成し、導体パターン上に絶縁樹脂層を形成した後、絶縁樹脂層の表面を粗化し、絶縁樹脂層の表面に無電解銅めっき被膜を形成する。次いで、無電解銅めっき被膜の上に感光性樹脂層を形成し、感光性樹脂層を露光、現像して、バイアホールを形成する部分を残したバイアホール形成用のメッキレジストを形成する。続いて、メッキレジストを用いて、無電解銅めっき被膜の上に、バイアホール形成用孔を有する電解銅めっき被膜を形成し、メッキレジストを除去した後、電解銅めっき被膜をエッチングレジストとして、エッチングにより無電解銅めっき被膜にバイアホール形成用孔を形成する。次に、電解銅めっき被膜をレーザー用のマスクとして、COレーザーで絶縁樹脂層にバイアホールを形成する。 In the method described in Patent Document 1, first, a conductor pattern is formed on an insulating substrate, an insulating resin layer is formed on the conductor pattern, the surface of the insulating resin layer is roughened, and the surface of the insulating resin layer is electroless. Form a copper plating film. Next, a photosensitive resin layer is formed on the electroless copper plating film, and the photosensitive resin layer is exposed and developed to form a plating resist for forming a via hole, leaving a portion for forming a via hole. Subsequently, using a plating resist, an electrolytic copper plating film having holes for forming via holes is formed on the electrolytic copper plating film, and after removing the plating resist, the electrolytic copper plating film is used as an etching resist for etching. A hole for forming a via hole is formed in the electroless copper plating film. Next, using the electrolytic copper plating film as a mask for the laser, a via hole is formed in the insulating resin layer with a CO 2 laser.

 この方法によれば、レーザー用のマスクとなる電解銅めっき被膜をバイアホール形成用のメッキレジストを用いて形成するので、バイアホール形成用孔をエッチングで形成する場合と異なり、過エッチングの問題がなく、バイアホールの小径化を図ることができる。 According to this method, an electrolytic copper plating film that serves as a mask for a laser is formed by using a plating resist for forming a via hole, so that there is a problem of overetching unlike the case where a hole for forming a via hole is formed by etching. It is possible to reduce the diameter of the via hole.

特開2000-59033号公報Japanese Unexamined Patent Publication No. 2000-59033

 しかしながら、特許文献1に記載の方法では、導体パターンを形成した絶縁基板上に絶縁樹脂層を形成した後、絶縁樹脂層の表面を粗化して無電解銅めっき被膜を形成しているので、絶縁樹脂層の表面粗さのばらつきが大きく、絶縁樹脂層の上に形成する導体パターンの形成性が低下してしまう場合があるという問題があった。 However, in the method described in Patent Document 1, after forming an insulating resin layer on an insulating substrate on which a conductor pattern is formed, the surface of the insulating resin layer is roughened to form an electroless copper plating film, so that insulation is achieved. There is a problem that the surface roughness of the resin layer varies widely and the formability of the conductor pattern formed on the insulating resin layer may decrease.

 本発明は、このような問題に基づきなされたものであり、バイアホールの孔径を小さくすることができ、かつ、導体パターンの形成性を向上させることができるプリント配線板の製造方法を提供することを目的とする。 The present invention has been made based on such a problem, and provides a method for manufacturing a printed wiring board capable of reducing the hole diameter of a via hole and improving the formability of a conductor pattern. With the goal.

 本発明者らは、内層回路を形成した内層基板の上に、絶縁層と電解銅箔とをこの順に積層して多層板を形成したのち、前記多層板から前記電解銅箔を除去し、前記絶縁層の表面に無電解めっき層を設けることにより、上記課題を解決できることを見出し、本発明を完成するに至った。 The present inventors formed a multilayer plate by laminating an insulating layer and an electrolytic copper foil in this order on an inner layer substrate on which an inner layer circuit was formed, and then removed the electrolytic copper foil from the multilayer plate. We have found that the above problems can be solved by providing an electrolytically-free plating layer on the surface of the insulating layer, and have completed the present invention.

 すなわち、本発明は以下の通りである。
[1]
 内層回路を形成した内層基板の上に、絶縁層と電解銅箔とをこの順に積層して多層板を形成する工程と、
 前記多層板から前記電解銅箔を除去し、前記絶縁層を露出させる工程と、
 前記絶縁層を露出させた後、前記絶縁層の表面に無電解銅めっき層を設ける工程と、
 前記無電解銅めっき層の上にレジスト層を設け、露光及び現像を行い、バイアホールを形成する部分を残したレジストパターンを形成する工程と、
 前記レジストパターンをめっきレジストとして、前記無電解銅めっき層の表面に電解銅めっき層を設ける工程と、
 前記電解銅めっき層を設けた後、前記レジストパターンを除去する工程と、
 前記レジストパターンを除去した後、前記電解銅めっき層をエッチングレジストとして、前記無電解銅めっき層をエッチングし、バイアホール形成用のマスクを形成する工程と、
 前記マスクを形成した後、前記絶縁層のうち、前記マスクで覆われていない部分をレーザーにより除去し、バイアホールを形成する工程と
 を含むことを特徴とするプリント配線板の製造方法。
[2]
 前記バイアホールのトップ径平均値が25μm以下であることを特徴とする[1]に記載のプリント配線板の製造方法。
[3]
 前記レジストパターンを形成した後、前記電解銅めっき層を設ける前に、スカムを除去する工程を含むことを特徴とする[1]に記載のプリント配線板の製造方法。
That is, the present invention is as follows.
[1]
A process of laminating an insulating layer and an electrolytic copper foil in this order on an inner layer substrate on which an inner layer circuit is formed to form a multilayer board.
A step of removing the electrolytic copper foil from the multilayer plate to expose the insulating layer,
After exposing the insulating layer, a step of providing an electroless copper plating layer on the surface of the insulating layer, and
A step of providing a resist layer on the electroless copper plating layer and performing exposure and development to form a resist pattern in which a portion forming a via hole is left.
A step of providing an electrolytic copper plating layer on the surface of the electrolytic copper plating layer using the resist pattern as a plating resist, and
After providing the electrolytic copper plating layer, the step of removing the resist pattern and
After removing the resist pattern, the electrolytic copper plating layer is used as an etching resist, and the electrolytic copper plating layer is etched to form a mask for forming a via hole.
A method for manufacturing a printed wiring board, which comprises a step of forming a via hole by removing a portion of the insulating layer not covered with the mask by a laser after forming the mask.
[2]
The method for manufacturing a printed wiring board according to [1], wherein the average value of the top diameter of the via hole is 25 μm or less.
[3]
The method for manufacturing a printed wiring board according to [1], which comprises a step of removing scum after forming the resist pattern and before providing the electrolytic copper plating layer.

 本発明によれば、内層回路を形成した内層基板の上に、絶縁層と電解銅箔とをこの順に積層して多層板を形成した後、多層板から電解銅箔を除去するようにしたので、絶縁層の表面に電解銅箔の表面形状を転写することができ、絶縁層の表面粗さのばらつきを小さくすることができる。また、絶縁層の表面に無電解めっき層を設け、その上にバイアホールを形成する部分を残したレジストパターンを形成した後、電解めっき層を設け、この電解めっき層をエッチングレジストとして無電解めっき層をエッチングし、バイアホール形成用のマスクを形成するようにしたので、過エッチングの問題を回避することができる。よって、バイアホールの小径化を図ることができ、かつ、導体パターンの形成性を向上させることができる。 According to the present invention, the insulating layer and the electrolytic copper foil are laminated in this order on the inner layer substrate on which the inner layer circuit is formed to form a multilayer board, and then the electrolytic copper foil is removed from the multilayer board. The surface shape of the electrolytic copper foil can be transferred to the surface of the insulating layer, and the variation in the surface roughness of the insulating layer can be reduced. Further, an electroless plating layer is provided on the surface of the insulating layer, a resist pattern is formed on which a portion forming a via hole is left, and then an electrolytic plating layer is provided, and this electrolytic plating layer is used as an etching resist for electroless plating. Since the layer is etched to form a mask for forming a via hole, the problem of over-etching can be avoided. Therefore, the diameter of the via hole can be reduced, and the formability of the conductor pattern can be improved.

本発明の一実施の形態に係るプリント配線板の製造方法の各工程を表す図である。It is a figure which shows each process of the manufacturing method of the printed wiring board which concerns on one Embodiment of this invention. 図1に続く各工程を表す図である。It is a figure which shows each process following FIG. 図2に続く各工程を表す図である。It is a figure which shows each process following FIG. 比較例1に係るプリント配線板の製造方法の各工程を表す図である。It is a figure which shows each process of the manufacturing method of the printed wiring board which concerns on the comparative example 1. FIG. 図4に続く各工程を表す図である。It is a figure which shows each process following FIG.

 以下、本発明を実施するための形態(以下、「本実施形態」という。)について詳細に説明するが、本発明はこれに限定されるものではなく、その要旨を逸脱しない範囲で様々な変形が可能である。 Hereinafter, embodiments for carrying out the present invention (hereinafter referred to as “the present embodiment”) will be described in detail, but the present invention is not limited thereto, and various modifications are made without departing from the gist thereof. Is possible.

 図1から図3は、本発明の一実施の形態に係るプリント配線板の製造方法の各工程を表すものである。本実施の形態では、ビルドアップ型多層プリント配線板を製造する方法について説明する。まず、例えば、図1(A)に示したように、絶縁基板11に内層回路12を形成して内層基板13を形成する(内層基板形成工程)。内層基板13は、従来より知られている方法により製造することができる。内層基板13の製造工程について一例を挙げて説明すると、例えば、まず、ガラスエポキシ系、ポリイミド系等の樹脂基板よりなる絶縁基板11にスルーホール(図示せず)を形成し、絶縁基板11の上下両面とスルーホールの内周面に、無電解銅めっきを下地として電解銅めっきを行う。次いで、表面にレジストパターンを形成し、エッチングにより内層回路12として導体パターン12aとスルーホール導体(図示せず)とを形成し、スルーホール導体の空洞部にエポキシ等の穴埋め樹脂を充填して平坦化する。 1 to 3 show each step of the method for manufacturing a printed wiring board according to an embodiment of the present invention. In this embodiment, a method of manufacturing a build-up type multilayer printed wiring board will be described. First, for example, as shown in FIG. 1A, the inner layer circuit 12 is formed on the insulating substrate 11 to form the inner layer substrate 13 (inner layer substrate forming step). The inner layer substrate 13 can be manufactured by a conventionally known method. To explain the manufacturing process of the inner layer substrate 13 by giving an example, for example, first, a through hole (not shown) is formed in an insulating substrate 11 made of a resin substrate such as a glass epoxy type or a polyimide type, and the upper and lower parts of the insulating substrate 11 are formed. Electrolytic copper plating is performed on both sides and the inner peripheral surface of the through hole using electroless copper plating as a base. Next, a resist pattern is formed on the surface, a conductor pattern 12a and a through-hole conductor (not shown) are formed as an inner layer circuit 12 by etching, and the hollow portion of the through-hole conductor is filled with a hole-filling resin such as epoxy to make it flat. To become.

 続いて、例えば、図1(B)に示したように、内層基板13の上に、絶縁層14と電解銅箔15とをこの順に積層して多層板16を形成する(多層板形成工程)。具体的には、例えば、内層基板13の上に、絶縁層14として絶縁性のプリプレグ又は樹脂シートを積層し、その上に電解銅箔15を積層し、圧着する。プリプレグとしては、例えば、ガラスクロス又は炭素繊維等の繊維状補強材に、硬化剤、着色材等の添加物を混合した熱硬化性樹脂を含浸させ、半硬化状態にしたものが挙げられる。樹脂シートとしては、例えば、硬化剤、着色材等の添加物を混合した熱硬化性樹脂を半硬化状態にしたものが挙げられる。プリプレグ又は樹脂シートに用いる熱硬化性樹脂としては、例えば、ポリイミド樹脂、液晶ポリエステル、エポキシ化合物、シアン酸エステル化合物、マレイミド化合物、フェノール化合物、ポリフェニレンエーテル化合物、ベンゾオキサジン化合物、有機基変性シリコーン化合物及び重合可能な不飽和基を有する化合物が挙げられる。 Subsequently, for example, as shown in FIG. 1 (B), the insulating layer 14 and the electrolytic copper foil 15 are laminated in this order on the inner layer substrate 13 to form the multilayer plate 16 (multilayer plate forming step). .. Specifically, for example, an insulating prepreg or a resin sheet is laminated as an insulating layer 14 on an inner layer substrate 13, and an electrolytic copper foil 15 is laminated on the insulating prepreg or a resin sheet and pressure-bonded. Examples of the prepreg include a semi-cured state in which a fibrous reinforcing material such as glass cloth or carbon fiber is impregnated with a thermosetting resin mixed with additives such as a curing agent and a coloring material. Examples of the resin sheet include those obtained by semi-curing a thermosetting resin mixed with additives such as a curing agent and a coloring material. Examples of the thermosetting resin used for the prepreg or the resin sheet include a polyimide resin, a liquid crystal polyester, an epoxy compound, a cyanate ester compound, a maleimide compound, a phenol compound, a polyphenylene ether compound, a benzoxazine compound, an organic group-modified silicone compound and polymerization. Examples include compounds having possible unsaturated groups.

 また、多層板16は、例えば、電解銅箔15の上に絶縁性の樹脂層を形成した樹脂層付き銅箔を用い、樹脂層を絶縁層14として、樹脂層を内層基板13に当接させて積層し、圧着することにより形成してもよい。樹脂層を構成する材料としては、例えば、上述したプリプレグ又は樹脂シートと同様のものが挙げられる。更に、多層板16は、例えば、内層基板13の上に絶縁性のエポキシ系等の液状樹脂をスピンコーター等で塗布した後に熱硬化させて絶縁層14を形成し、その上に電解銅箔15を積層し、圧着するようにしてもよい。 Further, for the multilayer plate 16, for example, a copper foil with a resin layer having an insulating resin layer formed on the electrolytic copper foil 15 is used, the resin layer is used as the insulating layer 14, and the resin layer is brought into contact with the inner layer substrate 13. It may be formed by laminating and crimping. Examples of the material constituting the resin layer include the same materials as the above-mentioned prepreg or resin sheet. Further, the multilayer board 16 is formed by, for example, applying a liquid resin such as an insulating epoxy on the inner layer substrate 13 with a spin coater or the like and then heat-curing to form an insulating layer 14, and an electrolytic copper foil 15 is formed on the insulating layer 14. May be laminated and crimped.

 絶縁層14の厚みは、例えば、5μm~40μmとすることが好ましい。電解銅箔15の厚みは、例えば、1μm~20μmとすることが好ましい。圧着は、例えば、プリプレグ又は樹脂シートを内層基板の上下(表裏)に配置し、圧力3.0MPa、温度220℃で60分間の積層成型を行う。これにより、絶縁層14の表面に電解銅箔15の表面形状が転写される。電解銅箔15の絶縁層14側の表面粗さRaは、0.01μmから2.0μmであることが好ましく、電解銅箔15の絶縁層14側の最大高さ粗さRzは、0.5μmから10.0μmであることが好ましい。 The thickness of the insulating layer 14 is preferably, for example, 5 μm to 40 μm. The thickness of the electrolytic copper foil 15 is preferably, for example, 1 μm to 20 μm. For crimping, for example, a prepreg or a resin sheet is placed above and below (front and back) of the inner layer substrate, and laminated molding is performed at a pressure of 3.0 MPa and a temperature of 220 ° C. for 60 minutes. As a result, the surface shape of the electrolytic copper foil 15 is transferred to the surface of the insulating layer 14. The surface roughness Ra of the electrolytic copper foil 15 on the insulating layer 14 side is preferably 0.01 μm to 2.0 μm, and the maximum height roughness Rz of the electrolytic copper foil 15 on the insulating layer 14 side is 0.5 μm. It is preferably 10.0 μm.

 次に、例えば、図1(C)に示したように、多層板16から電解銅箔15をエッチング等により全て除去し、全面において絶縁層14を露出させる(電解銅箔除去工程)。エッチング液として使用される水溶液は、特に限定されるものではないが、例えば、塩酸及び塩化第二銅水溶液によるもの、あるいは、硫酸及び過酸化水素水溶液によるものが挙げられる。次いで、例えば、図1(D)に示したように、絶縁層14の表面に無電解銅めっきにより、例えば厚み0.4μmから2μmの無電解銅めっき層17を形成する(無電解銅めっき工程)。無電解銅めっきは、例えば、ホルムアルデヒドを還元剤とするアルカリ性浴のものを使用する。 Next, for example, as shown in FIG. 1C, the electrolytic copper foil 15 is completely removed from the multilayer plate 16 by etching or the like, and the insulating layer 14 is exposed on the entire surface (electrolytic copper foil removing step). The aqueous solution used as the etching solution is not particularly limited, and examples thereof include those using hydrochloric acid and cupric chloride aqueous solution, and those using sulfuric acid and hydrogen peroxide aqueous solution. Next, for example, as shown in FIG. 1 (D), an electroless copper plating layer 17 having a thickness of, for example, 0.4 μm to 2 μm is formed on the surface of the insulating layer 14 by electroless copper plating (electroless copper plating step). ). For electroless copper plating, for example, an alkaline bath using formaldehyde as a reducing agent is used.

 その後、例えば、図1(E)に示したように、無電解銅めっき層17の上にドライフィルムを熱圧着してレジスト層を設け、後工程で形成するバイアホール21の部分のみが残るように露光及び現像を行い、バイアホール21を形成する部分を残したレジストパターン18を形成する(レジストパターン形成工程)。その際、レジスト層のラミネートは50℃~140℃とし、圧着圧力を1kgf/cm~15kgf/cm、圧着時間は5秒間~300秒間とすることが望ましい。ラミネートにより無電解銅めっき層17の上にレジスト層を設けた後に、レジスト層の所定部分に活性エネルギー線を照射し、照射部のレジスト層を硬化する露光を行う。活性エネルギー線の照射はマスクパターンを通してもよいし、直接活性エネルギー線を照射する直接描画法をもちいてもよい。活性エネルギー線としては、例えば、紫外線、可視光線、電子線、X線が挙げられ、特に紫外線が望ましい。紫外線の照射量はおおむね10mJ/cm~1000mJ/cmである。露光後の現像は、未露光部分を限定的に溶出するものであれば、特に限定されるものではないが、アルカリ性水溶液、水系現像液、有機溶剤等の現像液が用いられる。現像方法としては、例えば、スプレー、揺動浸漬、ブラッシング、スクラッピング等の公知の方法で行うことができる。 After that, for example, as shown in FIG. 1 (E), a dry film is heat-bonded onto the electrolytic copper plating layer 17 to provide a resist layer so that only the portion of the via hole 21 formed in the subsequent step remains. Is exposed and developed to form a resist pattern 18 in which a portion forming a via hole 21 is left (resist pattern forming step). At that time, it is desirable that the laminating of the resist layer is 50 ° C. to 140 ° C., the crimping pressure is 1 kgf / cm 2 to 15 kgf / cm 2 , and the crimping time is 5 seconds to 300 seconds. After the resist layer is provided on the electroless copper plating layer 17 by laminating, a predetermined portion of the resist layer is irradiated with active energy rays to perform exposure to cure the resist layer in the irradiated portion. Irradiation of the active energy rays may be performed through a mask pattern, or a direct drawing method of directly irradiating the active energy rays may be used. Examples of the active energy ray include ultraviolet rays, visible rays, electron beams, and X-rays, and ultraviolet rays are particularly desirable. The irradiation amount of ultraviolet rays is approximately 10 mJ / cm 2 to 1000 mJ / cm 2 . The development after exposure is not particularly limited as long as it elutes the unexposed portion in a limited manner, but a developing solution such as an alkaline aqueous solution, an aqueous developer, or an organic solvent is used. As a developing method, for example, a known method such as spraying, rocking dipping, brushing, scraping or the like can be used.

 また、レジストパターン18の厚み(すなわちレジスト層の厚み)は、後工程で形成する電解めっき層19の厚みよりも厚く、例えば、5μmから20μmとすることが好ましい。レジストパターン18を形成した後、例えば、図2(F)に示したように、プラズマクリーニング等によりスカム(レジスト残渣)を除去する(スカム除去工程)。 Further, the thickness of the resist pattern 18 (that is, the thickness of the resist layer) is thicker than the thickness of the electrolytic plating layer 19 formed in the subsequent step, and is preferably 5 μm to 20 μm, for example. After forming the resist pattern 18, for example, as shown in FIG. 2 (F), scum (resist residue) is removed by plasma cleaning or the like (scum removing step).

 スカムを除去した後、例えば、図2(G)に示したように、レジストパターン18をめっきレジストとして、無電解銅めっき層17の表面に電解銅めっきにより、例えば厚み1μmから10μmの電解銅めっき層19を形成する(電解銅めっき工程)。具体的には、例えば、浴温:22℃、電流密度:1.0A/dmでめっき処理を施す。めっき液組成としては、例えば、硫酸銅(例えば、120g/L)と硫酸(例えば、80g/L)と塩素イオン(例えば、50mg/L)の混合液とし、かつ、適量の添加剤を加えることが好ましい。添加剤としては、例えば、ポリエーテル化合物(ポリマー)、有機硫黄化合物(ブライトナー)および4級化アミン化合物(レベラー)を使用する方法が挙げられる。 After removing the scum, for example, as shown in FIG. 2 (G), the resist pattern 18 is used as a plating resist, and the surface of the electroless copper plating layer 17 is subjected to electrolytic copper plating, for example, electrolytic copper plating having a thickness of 1 μm to 10 μm. The layer 19 is formed (electrolytic copper plating step). Specifically, for example, the plating treatment is performed at a bath temperature of 22 ° C. and a current density of 1.0 A / dm 2 . The plating solution composition is, for example, a mixed solution of copper sulfate (for example, 120 g / L), sulfuric acid (for example, 80 g / L) and chloride ion (for example, 50 mg / L), and an appropriate amount of additives is added. Is preferable. Examples of the additive include a method using a polyether compound (polymer), an organic sulfur compound (Brightener) and a quaternized amine compound (leveler).

 電解銅めっき層19を設けた後、例えば、図2(H)に示したように、レジスト剥離液等を用いてレジストパターンを除去する(レジストパターン除去工程)。レジストパターン18を除去した後、例えば、図2(I)に示したように、電解銅めっき層19をエッチングレジストとして、フラッシュエッチング等により無電解銅めっき層17をエッチングし、無電解銅めっき層17及び電解銅めっき層19からなるバイアホール形成用のマスク20を形成する(マスク形成工程)。具体的な、エッチング方法としては、例えば、スプレー、揺動浸漬、等の公知の方法で行う事ができる。液組成としては硫酸及び過酸化水素水溶液による方法が挙げられる。 After providing the electrolytic copper plating layer 19, for example, as shown in FIG. 2H, the resist pattern is removed using a resist stripping solution or the like (resist pattern removing step). After removing the resist pattern 18, for example, as shown in FIG. 2 (I), the electrolytic copper plating layer 19 is used as an etching resist, and the electrolytic copper plating layer 17 is etched by flash etching or the like to etch the electrolytic copper plating layer 17. A mask 20 for forming a via hole composed of the 17 and the electrolytic copper plating layer 19 is formed (mask forming step). As a specific etching method, for example, a known method such as spraying, rocking dipping, or the like can be used. Examples of the liquid composition include a method using an aqueous solution of sulfuric acid and hydrogen peroxide.

 マスク20を形成した後、例えば、図3(J)に示したように、絶縁層14のうち、マスク20で覆われていない部分(すなわちマスク20から露出されている部分)をCOレーザー等のレーザーにより除去し、バイアホール21を形成する(バイアホール形成工程)。使用するCOレーザーの条件は、ビーム径1μm~50μmに絞り使用する。このバイアホール21のレーザー加工は、絶縁層14の下の導体パターン12aが露出するまで行う。これにより、バイアホール21の孔径を小さくすることができ、例えば、形成したバイアホール21のトップ径を平均値で25μm以下とすることができる。レーザー穴のトップ径を小さくすることで、より小径のパッドを作る事ができ、サブトラクティブ法により形成した場合よりも、よりファインライン化が可能となる。なお、バイアホール21のトップ径は、バイアホール21を形成する際の表面側の孔径である。 After forming the mask 20, for example, as shown in FIG. 3 (J), a portion of the insulating layer 14 that is not covered with the mask 20 (that is, a portion exposed from the mask 20) is subjected to a CO 2 laser or the like. The via hole 21 is formed by removing it with the laser of the above (via hole forming step). The conditions of the CO 2 laser used are narrowed down to a beam diameter of 1 μm to 50 μm. The laser processing of the via hole 21 is performed until the conductor pattern 12a under the insulating layer 14 is exposed. Thereby, the hole diameter of the via hole 21 can be reduced, and for example, the top diameter of the formed via hole 21 can be set to 25 μm or less on average. By reducing the top diameter of the laser hole, it is possible to make a pad with a smaller diameter, and it is possible to make a finer line than when it is formed by the subtractive method. The top diameter of the via hole 21 is the hole diameter on the surface side when the via hole 21 is formed.

 バイアホール21を形成した後、例えば、図3(K)に示したように、バイアホール21内のスミア(樹脂残渣)を除去する(デスミア工程)。スミアを除去した後、例えば、図3(L)に示したように、バイアホール21にバイア導体22を形成し、絶縁層14の上に導体パターン23を形成する(バイア導体・導体パターン形成工程)。具体的には、例えば、無電解銅めっき層と電解銅めっき層からなるマスク20およびバイアホール21上に無電解銅めっき及びビアフィリング銅めっきによりバイア導体22及び導体パターン23を形成する。 After forming the via hole 21, for example, as shown in FIG. 3 (K), the smear (resin residue) in the via hole 21 is removed (desmear step). After removing the smear, for example, as shown in FIG. 3 (L), the via conductor 22 is formed in the via hole 21, and the conductor pattern 23 is formed on the insulating layer 14 (via conductor / conductor pattern forming step). ). Specifically, for example, the via conductor 22 and the conductor pattern 23 are formed by electroless copper plating and via-filling copper plating on the mask 20 and the via hole 21 composed of the electrolytic copper plating layer and the electrolytic copper plating layer.

 その後、更にビルドアップを重ねる場合は、上述した多層板形成工程からバイア導体・導体パターン形成工程までを必要な積層数となるまで繰り返して多層化する。 After that, when building up further, the above-mentioned multi-layer plate forming process to the via conductor / conductor pattern forming process are repeated until the required number of layers is reached.

 このように本実施の形態によれば、内層回路12を形成した内層基板13の上に、絶縁層14と電解銅箔15とをこの順に積層して多層板16を形成した後、多層板16から電解銅箔15を除去するようにしたので、絶縁層14の表面に電解銅箔15の表面形状を転写することができ、絶縁層14の表面粗さのばらつきを小さくすることができる。また、絶縁層14の表面に無電解めっき層17を設け、その上にバイアホール21を形成する部分を残したレジストパターン18を形成した後、電解めっき層19を設け、この電解めっき層19をエッチングレジストとして無電解めっき層17をエッチングし、バイアホール形成用のマスク20を形成するようにしたので、過エッチングの問題を回避することができる。よって、バイアホール21の小径化を図ることができ、かつ、導体パターン23の形成性を向上させることができる。 As described above, according to the present embodiment, the insulating layer 14 and the electrolytic copper foil 15 are laminated in this order on the inner layer substrate 13 on which the inner layer circuit 12 is formed to form the multilayer plate 16, and then the multilayer plate 16 is formed. Since the electrolytic copper foil 15 is removed from the surface, the surface shape of the electrolytic copper foil 15 can be transferred to the surface of the insulating layer 14, and the variation in the surface roughness of the insulating layer 14 can be reduced. Further, an electrolytic plating layer 17 is provided on the surface of the insulating layer 14, a resist pattern 18 is formed on the resist pattern 18 in which a portion forming a via hole 21 is left, and then an electrolytic plating layer 19 is provided, and the electrolytic plating layer 19 is provided. Since the electroless plating layer 17 is etched as an etching resist to form a mask 20 for forming a via hole, the problem of overetching can be avoided. Therefore, the diameter of the via hole 21 can be reduced, and the formability of the conductor pattern 23 can be improved.

(実施例1)
 次のようにしてプリント配線板を作製した(図1~3参照)。
(Example 1)
A printed wiring board was produced as follows (see FIGS. 1 to 3).

[内層基板13の作製](図1(A)参照)
 ガラス布基材BT樹脂銅張積層板(導体厚さ12μm、厚み0.1mm、三菱ガス化学(株)製CCL―HL832NS)の両面に内層回路12をサブトラクティブ法によって形成した。
[内層基板13の銅表面粗化](図1(A)参照)
 内層基板13の銅表面の粗化はメック(株)の薬液を使用した。前処理としてCA5330で内層基板13の洗浄を行い、水洗処理後にCZ8101にて銅表面の粗化を行い、水洗後にCL8300にて防錆をして水洗乾燥をした。CZ8101のエッチング量は1μmとした。銅表面の粗化は水平ラインのスプレー装置を使用した。
[Manufacturing of inner layer substrate 13] (see FIG. 1 (A))
The inner layer circuit 12 was formed on both sides of a glass cloth base material BT resin copper-clad laminate (conductor thickness 12 μm, thickness 0.1 mm, CCL-HL832NS manufactured by Mitsubishi Gas Chemical Company, Inc.) by a subtractive method.
[Roughening of the copper surface of the inner layer substrate 13] (see FIG. 1 (A))
A chemical solution of MEC Co., Ltd. was used to roughen the copper surface of the inner layer substrate 13. As a pretreatment, the inner layer substrate 13 was washed with CA5330, the copper surface was roughened with CZ8101 after washing with water, and after washing with water, rust was prevented with CL8300 and dried with water. The etching amount of CZ8101 was 1 μm. A horizontal line spray device was used to roughen the copper surface.

[多層板16形成のための積層処理](図1(B)参照)
 内層基板13の上下(表裏)に絶縁層14として樹脂シート(CRS-381NSI)を配置した。なお、樹脂シート上には電解銅箔15として三井金属(株)キャリア付き極薄電解銅箔(MTEx)5μmが配置されたものを使用した。配置が終わったら、圧力3.0MPa、温度220℃で60分間の積層成型を行い、内層基板13の上に、絶縁層14と電解銅箔15とをこの順に積層した多層板16を形成した。
[表層銅の全エッチング](図1(C)参照)
 バイアホール形成用のマスク20の形成は、SAP(Semi Additive Process)法を用いて行う。そのためまず、多層板16の表層の電解銅箔15を塩酸及び塩化第二銅水溶液により48℃の液温度にてエッチングを行い除去したのち、水洗乾燥をした。装置は水平ラインのスプレー式のもの(東京化工機(株)製)を使用した。
[Laminating process for forming the multilayer plate 16] (see FIG. 1 (B))
A resin sheet (CRS-381NSI) was arranged as an insulating layer 14 above and below (front and back) of the inner layer substrate 13. As the electrolytic copper foil 15, a resin sheet on which 5 μm of ultrathin electrolytic copper foil (MTEx) with a carrier of Mitsui Kinzoku Co., Ltd. was arranged was used. After the arrangement was completed, laminating molding was performed at a pressure of 3.0 MPa and a temperature of 220 ° C. for 60 minutes to form a multilayer plate 16 in which the insulating layer 14 and the electrolytic copper foil 15 were laminated in this order on the inner layer substrate 13.
[Full etching of surface copper] (see Fig. 1 (C))
The mask 20 for forming the via hole is formed by using the SAP (Semi Adaptive Process) method. Therefore, first, the electrolytic copper foil 15 on the surface layer of the multilayer plate 16 was removed by etching with hydrochloric acid and a cupric chloride aqueous solution at a liquid temperature of 48 ° C., and then washed and dried with water. The device used was a horizontal line spray type (manufactured by Tokyo Kakoki Co., Ltd.).

[無電解銅めっき層17の形成](図1(D)参照)
 電解銅箔15を除去した多層板16をめっき用治具にラッキングし、無電解銅めっき槽に浸漬揺動をおこなった。無電解銅めっき層17の形成は浸漬揺動のアルメックスPE(株)の装置を使用した。薬液は上村工業(株)製スルカップPEAおよびホルムアルデヒド混合したものを使用した。無電解銅メッキの薬液温度は36℃とし、20分間の浸漬揺動をおこなった。この処理で1μmの無電解銅めっき層17を形成した。
[Formation of electroless copper plating layer 17] (see FIG. 1 (D))
The multilayer plate 16 from which the electrolytic copper foil 15 was removed was racked on a plating jig, and immersed and rocked in an electroless copper plating tank. For the formation of the electroless copper plating layer 17, an apparatus of Almex PE Co., Ltd. was used for immersion rocking. The chemical solution used was a mixture of Sulcup PEA manufactured by C. Uyemura & Co., Ltd. and formaldehyde. The temperature of the chemical solution for electroless copper plating was 36 ° C., and the immersion was shaken for 20 minutes. By this treatment, a 1 μm electroless copper plating layer 17 was formed.

[コンフォーマルレーザー加工のためのレジストパターン18の形成](図1(E)参照)
 無電解銅めっき層17の上にドライフィルムレジストをラミネートし、露光・現像を行い、レジストパターン18を形成した。ドライフィルムレジストは日立化成工業(株)のRD-1207の7μm厚を使用し、ラミネーターはオー・エヌ・シーの装置を使用した。ラミネート圧力0.4MPa、ラミネート温度110℃の条件でおこなった。露光はアドテックエンジニアリング(株)のINPREX3650を使用した。露光後の現像は炭酸カリウム水溶液を使用した。30℃の液温度で東京化工機(株)の装置を使用した。
[Formation of resist pattern 18 for conformal laser machining] (see FIG. 1 (E))
A dry film resist was laminated on the electroless copper plating layer 17, and exposed and developed to form a resist pattern 18. The dry film resist used was RD-1207 of Hitachi Kasei Kogyo Co., Ltd. with a thickness of 7 μm, and the laminator used was an ONC device. The laminating pressure was 0.4 MPa and the laminating temperature was 110 ° C. The exposure used INPREX3650 of Adtech Engineering Co., Ltd. A potassium carbonate aqueous solution was used for development after exposure. The equipment of Tokyo Kakoki Co., Ltd. was used at a liquid temperature of 30 ° C.

[スカム除去](図2(F)参照)
 レジストパターン18を形成した後、ノードソンアドバンストテクノロジー(株)の装置を使用し、プラズマクリーニングによりスカムを除去した。ガスはアルゴン、窒素、酸素、四フッ化メタンを使用した。
[電解銅めっき層19の形成](図2(G)参照)
 スカムを除去した後、アルメックスPE(株)の浸漬タイプの装置を使用し、直流電流で1A/dmにて5μmの厚みになるように電解銅めっきを行い電解銅めっき層19を形成した。銅めっき浴温度は22℃とし、奥野製薬工業のトップルチナSFをレベラー、ブライオナー、ポリマーの添加剤として使用した。銅めっき浴は硫酸銅及び硫酸、塩酸の混合液を使用した。
[Scum removal] (See Fig. 2 (F))
After forming the resist pattern 18, the scum was removed by plasma cleaning using an apparatus of Nordson Advanced Technology Co., Ltd. The gas used was argon, nitrogen, oxygen, and methane tetrafluoride.
[Formation of Electrolytic Copper Plating Layer 19] (See FIG. 2 (G))
After removing the scum, an electrolytic copper plating layer 19 was formed by electrolytic copper plating at 1 A / dm 2 with a direct current to a thickness of 5 μm using a dipping type apparatus of Armex PE Co., Ltd. The copper plating bath temperature was 22 ° C., and Okuno Pharmaceutical Industry's Top Lucina SF was used as an additive for levelers, brioners, and polymers. As the copper plating bath, a mixed solution of copper sulfate, sulfuric acid and hydrochloric acid was used.

[レジストパターン18の除去](図2(H)参照)
 電解銅めっき層19を形成した後、レジストパターン18を除去した。薬液は三菱ガス化学(株)のR-100Sを使用し、液温度48℃とした。装置は東京化工機(株)のスプレータイプのものを使用した。
[無電解銅めっき層17のエッチング](図2(I)参照)
 レジストパターン18を除去した後、電解銅めっき層19をエッチングレジストとして、フラッシュエッチングにより無電解銅めっき層17をエッチングし、バイアホール形成用のマスク20を形成した。薬液は三菱ガス化学(株)のクリーンエッチCPE-770を使用し、液温度は35℃とした。装置は東京化工機(株)のスプレータイプのものを使用した。
[Removal of resist pattern 18] (see FIG. 2H)
After forming the electrolytic copper plating layer 19, the resist pattern 18 was removed. R-100S of Mitsubishi Gas Chemical Company, Inc. was used as the chemical solution, and the solution temperature was set to 48 ° C. The equipment used was a spray type from Tokyo Kakoki Co., Ltd.
[Etching of electroless copper plating layer 17] (see FIG. 2 (I))
After removing the resist pattern 18, the electrolytic copper plating layer 19 was used as an etching resist, and the electrolytic copper plating layer 17 was etched by flash etching to form a mask 20 for forming a via hole. Clean etch CPE-770 manufactured by Mitsubishi Gas Chemical Company, Inc. was used as the chemical solution, and the solution temperature was 35 ° C. The equipment used was a spray type from Tokyo Kakoki Co., Ltd.

[バイアホール21の形成](図3(J)参照)
 マスク20を形成した後、絶縁層14のうちマスク20で覆われていない部分をレーザーにより除去し、バイアホール21を形成した。レーザー穴加工は三菱電機(株)のML605GTW4(-P)5350Uの装置を使用した。マスク径は0.4mmφとし、エネルギーは0.32mJ+0.11mJの条件にて行った。
[Formation of via hole 21] (see FIG. 3 (J))
After forming the mask 20, the portion of the insulating layer 14 not covered by the mask 20 was removed by a laser to form a via hole 21. For laser hole drilling, the equipment of ML605GTW4 (-P) 5350U of Mitsubishi Electric Corporation was used. The mask diameter was 0.4 mmφ and the energy was 0.32 mJ + 0.11 mJ.

[スミア除去](図3(K)参照)
 バイアホール21を形成した後、めっき用治具に多層板16のラッキングを行い、膨潤槽、エッチング槽、中和槽に浸漬揺動を行い、スミアを除去した。浸漬揺動にはアルメックスPE(株)の装置を使用した。薬液は上村工業(株)製のアップデスプロセスを使用した。膨潤液はアップデスMDS-37、エッチング液はアップデスMDE-40およびELC-SHの混合液、中和はアップデスMDN-62を使用した。エッチング槽は温度80℃とし、10分間の浸漬を行った。
[Smear removal] (See Fig. 3 (K))
After forming the via hole 21, the multilayer plate 16 was racked on the plating jig, and the swelling tank, the etching tank, and the neutralization tank were immersed and rocked to remove smears. The equipment of Almex PE Co., Ltd. was used for the immersion swing. The chemical solution used was an up-death process manufactured by C. Uyemura & Co., Ltd. Updes MDS-37 was used as the swelling solution, Updes MDE-40 and ELC-SH mixed solution was used as the etching solution, and Updes MDN-62 was used for neutralization. The temperature of the etching tank was 80 ° C., and the etching tank was immersed for 10 minutes.

[バイア導体22の形成](図3(L)参照)
 スミア除去した後、めっき用治具に多層板16のラッキングを行い、無電解銅めっき槽に浸漬揺動ができるアルメックスPE(株)の装置で無電解銅めっきをおこなった。薬液は上村工業(株)製スルカップPEAおよびホルムアルデヒド混合したものを使用した。無電解銅めっきの薬液温度は36℃で処理時間は10分とし、無電解銅めっき厚みは0.4μmをねらった。次にビアフィリングめっきとして、アルメックスPE(株)の浸漬タイプの装置を使用し、直流電流で1A/dmにて15μmの厚みになるようにめっきを行った。銅めっき浴温度は22℃とし、ローム・アンド・ハース電子材料(株)のスルーホール用フィリング液CU-BRITE TH4をレベラー、ブライオナー、ポリマーの添加剤として使用した。銅めっき浴は硫酸銅及び硫酸、塩酸の混合液を使用した。
[Formation of Via Conductor 22] (See FIG. 3 (L))
After removing the smear, the multilayer plate 16 was racked on the plating jig, and the electroless copper plating was performed by the device of Armex PE Co., Ltd., which can be immersed and rocked in the electroless copper plating tank. The chemical solution used was a mixture of Sulcup PEA manufactured by C. Uyemura & Co., Ltd. and formaldehyde. The chemical temperature of the electroless copper plating was 36 ° C., the treatment time was 10 minutes, and the thickness of the electroless copper plating was 0.4 μm. Next, as the via filling plating, an immersion type device of Almex PE Co., Ltd. was used, and plating was performed at 1 A / dm 2 with a direct current so as to have a thickness of 15 μm. The copper plating bath temperature was 22 ° C., and CU-BRITE TH4, a filling liquid for through holes manufactured by Roam & Haas Electronic Materials Co., Ltd., was used as an additive for a leveler, a brioner, and a polymer. As the copper plating bath, a mixed solution of copper sulfate, sulfuric acid and hydrochloric acid was used.

(比較例1)
 次のようにしてプリント配線板を作製した。図4及び図5は比較例1に係るプリント配線板の製造方法の各工程を表すものである。
(Comparative Example 1)
A printed wiring board was produced as follows. 4 and 5 show each step of the method for manufacturing a printed wiring board according to Comparative Example 1.

[内層基板113の作製](図4(A)参照)
 ガラス布基材BT樹脂銅張積層板(銅体厚さ12μm、厚み0.1mm、三菱ガス化学(株)製CCL―HL832NS)の両面に内層回路112をサブトラクティブ法によって形成した。
[内層基板113の銅表面粗化](図4(A)参照)
 内層基板113の銅表面の粗化はメック(株)の薬液を使用した。CZ8101にて銅表面の粗化を行い、エッチング量は1μmとした。銅表面の粗化は水平ラインのスプレー装置を使用した。
[Manufacturing of inner layer substrate 113] (see FIG. 4 (A))
The inner layer circuit 112 was formed on both sides of a glass cloth base material BT resin copper-clad laminate (copper body thickness 12 μm, thickness 0.1 mm, CCL-HL832NS manufactured by Mitsubishi Gas Chemical Company, Inc.) by a subtractive method.
[Roughening of the copper surface of the inner layer substrate 113] (see FIG. 4 (A))
A chemical solution of MEC Co., Ltd. was used to roughen the copper surface of the inner layer substrate 113. The copper surface was roughened with CZ8101 and the etching amount was set to 1 μm. A horizontal line spray device was used to roughen the copper surface.

[多層板116形成のための積層処理](図4(B)参照)
 内層基板113の上下(表裏)に絶縁層114として樹脂シート(CRS-381NSI)を配置した。なお、樹脂シート上には三井金属(株)キャリア付き極薄銅箔115(MTEx)5μmが配置されたものを使用した。配置が終わったら、圧力3.0MPa、温度220℃で60分間の積層成型を行った。
[Laminating process for forming the multilayer plate 116] (see FIG. 4B)
A resin sheet (CRS-381NSI) was arranged as an insulating layer 114 above and below (front and back) of the inner layer substrate 113. A resin sheet on which 5 μm of ultrathin copper foil 115 (MTEx) with a carrier of Mitsui Kinzoku Co., Ltd. was placed was used. After the arrangement was completed, laminating molding was performed at a pressure of 3.0 MPa and a temperature of 220 ° C. for 60 minutes.

[コンフォーマルレーザー加工のためのマスク形成](図4(C)~(E)参照)
 バイアホール形成用のマスク120の形成は、サブトラクティブ法を用いて行う。多層板116の上下(表裏)にドライフィルムレジストによりレジスト層を形成し、露光、現像をして、レジストパターン118を形成した。ドライフィルムレジストは日立化成工業(株)のRD-1215の15μm厚を使用し、ラミネーターはオー・エヌ・シーの装置を使用した。ラミネート圧力0.4MPa、ラミネート温度110℃の条件でおこなった。露光はアドテックエンジニアリング(株)のINPREX3650を使用した。露光後の現像は炭酸カリウム水溶液を使用した。次いで、極薄銅箔115をエッチングしてマスク120を形成し、レジストパターン118を除去した。エッチングは塩酸及び塩化第二銅水溶液によるもの行った。レジストパターン118の剥離は三菱ガス化学(株)のR-100Sを使用した。現像からエッチング及び剥離までの工程は東京化工機(株)のスプレータイプの装置を使用した。
[Mask formation for conformal laser machining] (see FIGS. 4C to 4E)
The mask 120 for forming the via hole is formed by using the subtractive method. A resist layer was formed on the upper and lower sides (front and back) of the multilayer plate 116 with a dry film resist, and exposed and developed to form a resist pattern 118. The dry film resist used was RD-1215 manufactured by Hitachi Chemical Industries, Ltd. with a thickness of 15 μm, and the laminator used was an ONC device. The laminating pressure was 0.4 MPa and the laminating temperature was 110 ° C. The exposure used INPREX3650 of Adtech Engineering Co., Ltd. A potassium carbonate aqueous solution was used for development after exposure. Next, the ultrathin copper foil 115 was etched to form the mask 120, and the resist pattern 118 was removed. Etching was performed with hydrochloric acid and an aqueous solution of cupric chloride. R-100S of Mitsubishi Gas Chemical Company, Inc. was used for peeling the resist pattern 118. A spray-type device manufactured by Tokyo Kakoki Co., Ltd. was used for the processes from development to etching and peeling.

[バイアホール121の形成](図5(F)参照)
 絶縁層114のうちマスク120で覆われていない部分をレーザーにより除去し、バイアホール121を形成した。レーザー穴加工は三菱電機(株)のML605GTW4(-P)5350Uの装置を使用した。
[スミア除去](図5(G)参照)
 めっき用治具に多層板116のラッキングを行い、膨潤槽、エッチング槽、中和槽に浸漬揺動をおこなった。浸漬揺動のアルメックスPE(株)の装置を使用した。薬液は上村工業(株)製のアップデスプロセスを使用した。
[Formation of via hole 121] (see FIG. 5 (F))
The portion of the insulating layer 114 not covered by the mask 120 was removed by a laser to form a via hole 121. For laser hole drilling, the equipment of ML605GTW4 (-P) 5350U of Mitsubishi Electric Corporation was used.
[Smear removal] (see Fig. 5 (G))
The multilayer plate 116 was racked on the plating jig, and the dipping and shaking were performed in the expansion tank, the etching tank, and the neutralization tank. An apparatus of Almex PE Co., Ltd. for immersion rocking was used. The chemical solution used was an up-death process manufactured by C. Uyemura & Co., Ltd.

[バイア導体122の形成](図5(H)参照)
 めっき用治具に多層板116のラッキングを行い、無電解銅めっき槽に浸漬揺動ができるアルメックスPE(株)の装置で無電解銅めっきをおこなった。薬液は上村工業(株)製スルカップPEAおよびホルムアルデヒド混合したものを使用した。無電解銅めっきの薬液温度は36℃で処理時間は10分とし、無電解銅めっき厚みは0.4μmをねらった。次にビアフィリングめっきとして、アルメックスPE(株)の浸漬タイプの装置を使用し、直流電流で1A/dmにて15μmの厚みになる様にめっきを行った。銅めっきはローム・アンド・ハース電子材料(株)のスルーホール用フィリング液CU-BRITE TH4をレベラー、ブライトナー、ポリマーの添加剤として使用した。銅めっき浴は硫酸銅及び硫酸、塩酸の混合液を使用した。
[Formation of Via Conductor 122] (See FIG. 5 (H))
The multilayer plate 116 was racked on the plating jig, and electroless copper plating was performed by an device of Almex PE Co., Ltd., which can be immersed and rocked in an electroless copper plating tank. The chemical solution used was a mixture of Sulcup PEA manufactured by C. Uyemura & Co., Ltd. and formaldehyde. The chemical temperature of the electroless copper plating was 36 ° C., the treatment time was 10 minutes, and the thickness of the electroless copper plating was 0.4 μm. Next, as the via filling plating, an immersion type device of Almex PE Co., Ltd. was used, and plating was performed at 1 A / dm 2 with a direct current so as to have a thickness of 15 μm. For copper plating, CU-BRITE TH4, a filling liquid for through holes manufactured by Roam & Haas Electronic Materials Co., Ltd., was used as an additive for levelers, brighteners, and polymers. As the copper plating bath, a mixed solution of copper sulfate, sulfuric acid and hydrochloric acid was used.

(比較例2)
 次のようにしてプリント配線板を作製した。なお、比較例2では実施例1(本実施形態)と対応する構成要素には同一の符号を用いて説明する。
(Comparative Example 2)
A printed wiring board was produced as follows. In Comparative Example 2, the same reference numerals are used for the components corresponding to those of the first embodiment (the present embodiment).

[多層板の形成]
 まず、実施例1と同様にして、内層基板13の作製、及び、内層基板13の銅表面粗化を行ったのち、内層基板13の上下(表裏)に絶縁層14として味の素(株)製樹脂シート(GX92)を配置した。絶縁層14を配置した内層基板13をニッコー・マテリアル(株)の真空ラミネーターにより、温度100℃、ラミネート圧力7kgf程度の条件でラミネートし、150℃30分の条件で乾燥して、内層基板13に絶縁層14を積層した多層板とした。
[Formation of multilayer board]
First, in the same manner as in Example 1, the inner layer substrate 13 is manufactured and the copper surface of the inner layer substrate 13 is roughened, and then Ajinomoto Co., Inc. resin is used as an insulating layer 14 on the upper and lower sides (front and back) of the inner layer substrate 13. A sheet (GX92) was placed. The inner layer substrate 13 on which the insulating layer 14 is arranged is laminated with a vacuum laminator of Nikko Material Co., Ltd. under the conditions of a temperature of 100 ° C. and a laminating pressure of about 7 kgf, dried at 150 ° C. for 30 minutes, and then attached to the inner layer substrate 13. The insulating layer 14 was laminated to form a multilayer board.

[デスミア処理]
 バイアホール形成用のマスク20の形成は、SAP法を用いて行う。デスミア用治具に多層板のラッキングを行い、膨潤槽、エッチング槽、中和槽に浸漬揺動をおこなった。浸漬揺動のアルメックスPE(株)の装置を使用した。薬液は上村工業(株)製のアップデスプロセスを使用した。デスミア温度条件は、膨潤70℃、エッチング80℃、中和40℃にて行った。この際のデスミア処理は、レーザー穴内のスミア除去する目的ではなく、樹脂シート表面の表面を粗化する事で無電解銅めっきの密着性を向上させ、ピール強度をあげる目的で行った。
[Desmia processing]
The mask 20 for forming the via hole is formed by using the SAP method. The multilayer plate was racked on the Desmia jig, and the immersion and rocking were performed in the expansion tank, the etching tank, and the neutralization tank. An apparatus of Almex PE Co., Ltd. for immersion rocking was used. The chemical solution used was an up-death process manufactured by C. Uyemura & Co., Ltd. The desmear temperature conditions were swelling 70 ° C., etching 80 ° C., and neutralization 40 ° C.. The desmear treatment at this time was performed not for the purpose of removing smear in the laser hole, but for the purpose of improving the adhesion of the electroless copper plating by roughening the surface of the resin sheet surface and increasing the peel strength.

[無電解銅めっき層17の形成]
 めっき用治具に多層板のラッキングを行い、無電解銅めっき槽に浸漬揺動を行い、無電解銅めっき層17を形成した。無電解銅めっき層17の形成は浸漬揺動のアルメックスPE(株)の装置を使用した。薬液は上村工業(株)製スルカップPEAおよびホルムアルデヒド混合したものを使用した。無電解銅めっきの約液温度は、36℃とし、20分間の浸漬揺動をおこなった。
[Formation of electroless copper plating layer 17]
The multilayer plate was racked on the plating jig and immersed and rocked in the electroless copper plating tank to form the electroless copper plating layer 17. For the formation of the electroless copper plating layer 17, an apparatus of Almex PE Co., Ltd. was used for immersion rocking. The chemical solution used was a mixture of Sulcup PEA manufactured by C. Uyemura & Co., Ltd. and formaldehyde. The liquid temperature of the electroless copper plating was set to 36 ° C., and the immersion was shaken for 20 minutes.

[コンフォーマルレーザー加工のためのレジストパターン18の形成]
 無電解銅めっき層17の上にドライフィルムレジストをラミネートし、露光・現像を行い、レジストパターン18を形成した。ドライフィルムレジストは日立化成工業(株)のRD-1215の15μm厚を使用し、ラミネーターはオー・エヌ・シーの装置を使用した。ラミネート圧力0.4MPa、ラミネート温度110℃の条件でおこなった。露光はアドテックエンジニアリング(株)のINPREX3650を使用した。露光後の現像は炭酸カリウム水溶液を使用し、エッチングは塩酸及び塩化第二銅水溶液を使用し48℃の液温度にて行い、ドライフィルム剥離は三菱ガス化学(株)のR-100Sを使用した。現像からエッチング及び剥離までの工程は東京化工機(株)のスプレータイプの装置を使用した。
[Formation of resist pattern 18 for conformal laser machining]
A dry film resist was laminated on the electroless copper plating layer 17, and exposed and developed to form a resist pattern 18. The dry film resist used was RD-1215 manufactured by Hitachi Chemical Industries, Ltd. with a thickness of 15 μm, and the laminator used was an ONC device. The laminating pressure was 0.4 MPa and the laminating temperature was 110 ° C. The exposure used INPREX3650 of Adtech Engineering Co., Ltd. Development after exposure was performed using an aqueous solution of potassium carbonate, etching was performed using an aqueous solution of hydrochloric acid and cupric chloride at a liquid temperature of 48 ° C., and dry film peeling was performed using R-100S of Mitsubishi Gas Chemical Company, Inc. .. A spray-type device manufactured by Tokyo Kakoki Co., Ltd. was used for the processes from development to etching and peeling.

[スカム除去]
 レジストパターン18を形成した後、ノードソンアドバンストテクノロジー(株)の装置を使用し、プラズマクリーニングによりスカムを除去した。ガスはアルゴン、窒素、酸素、四フッ化メタンを使用した。
[電解銅めっき層19の形成]
 スカムを除去した後、アルメックスPE(株)の浸漬タイプの装置を使用し、直流電流で1A/dmにて5μmの厚みになるように電解銅めっきを行い、電解銅めっき層19を形成した。銅めっき浴温度は22℃とし、奥野製薬工業のトップルチナSFをレベラー、ブライオナー、ポリマーの添加剤として使用した。銅めっき浴は硫酸銅及び硫酸、塩酸の混合液を使用した。
[Scum removal]
After forming the resist pattern 18, the scum was removed by plasma cleaning using an apparatus of Nordson Advanced Technology Co., Ltd. The gas used was argon, nitrogen, oxygen, and methane tetrafluoride.
[Formation of electrolytic copper plating layer 19]
After removing the scum, electrolytic copper plating was performed at 1 A / dm 2 with a direct current to a thickness of 5 μm using an immersion type device of Armex PE Co., Ltd. to form an electrolytic copper plating layer 19. .. The copper plating bath temperature was 22 ° C., and Okuno Pharmaceutical Industry's Top Lucina SF was used as an additive for levelers, brioners, and polymers. As the copper plating bath, a mixed solution of copper sulfate, sulfuric acid and hydrochloric acid was used.

[レジストパターン18の除去]
 電解銅めっき層19を形成した後、レジストパターン18を除去した。薬液は三菱ガス化学(株)のR-100Sを使用し、液温度48℃とした。装置は東京化工機(株)のスプレータイプのものを使用した。
[無電解銅めっき層17のエッチング]
 レジストパターン18を除去した後、電解銅めっき層19をエッチングレジストとして、フラッシュエッチングにより無電解銅めっき層17をエッチングし、バイアホール形成用のマスク20を形成した。薬液は三菱ガス化学(株)のクリーンエッチCPE-770を使用し、液温度は35℃とした。装置は東京化工機(株)のスプレータイプのものを使用した。
[Removal of resist pattern 18]
After forming the electrolytic copper plating layer 19, the resist pattern 18 was removed. R-100S of Mitsubishi Gas Chemical Company, Inc. was used as the chemical solution, and the solution temperature was set to 48 ° C. The equipment used was a spray type from Tokyo Kakoki Co., Ltd.
[Etching of electroless copper plating layer 17]
After removing the resist pattern 18, the electrolytic copper plating layer 19 was used as an etching resist, and the electrolytic copper plating layer 17 was etched by flash etching to form a mask 20 for forming a via hole. Clean etch CPE-770 manufactured by Mitsubishi Gas Chemical Company, Inc. was used as the chemical solution, and the solution temperature was 35 ° C. The equipment used was a spray type from Tokyo Kakoki Co., Ltd.

[バイアホール21の形成]
 マスク20を形成した後、絶縁層14のうちマスク20で覆われていない部分をレーザーにより除去し、バイアホール21を形成した。レーザー穴加工は三菱電機(株)のML605GTW4(-P)5350Uの装置を使用した。
[Formation of via hole 21]
After forming the mask 20, the portion of the insulating layer 14 not covered by the mask 20 was removed by a laser to form a via hole 21. For laser hole drilling, the equipment of ML605GTW4 (-P) 5350U of Mitsubishi Electric Corporation was used.

[スミア除去]
 バイアホール21を形成した後、めっき用治具に多層板のラッキングを行い、膨潤槽、エッチング槽、中和槽に浸漬揺動を行い、スミアを除去した。浸漬揺動のアルメックスPE(株)の装置を使用した。薬液は上村工業(株)製のアップデスプロセスを使用した。膨潤液はアップデスMDS-37、エッチング液はアップデスMDE-40およびELC-SHの混合液、中和はアップデスMDN-62を使用した。エッチング槽は温度80℃とし、10分間の浸漬を行った。
[Smear removal]
After forming the via hole 21, the multilayer plate was racked on the plating jig, and the swelling tank, the etching tank, and the neutralization tank were immersed and rocked to remove smears. An apparatus of Almex PE Co., Ltd. for immersion rocking was used. The chemical solution used was an up-death process manufactured by C. Uyemura & Co., Ltd. Updes MDS-37 was used as the swelling solution, Updes MDE-40 and ELC-SH mixed solution was used as the etching solution, and Updes MDN-62 was used for neutralization. The temperature of the etching tank was 80 ° C., and the etching tank was immersed for 10 minutes.

[バイア導体22の形成]
 スミア除去した後、めっき用治具に多層板のラッキングを行い、無電解銅めっき槽に浸漬揺動ができるアルメックスPE(株)の装置で無電解銅めっきをおこなった。薬液は上村工業(株)製スルカップPEAおよびホルムアルデヒド混合したものを使用した。無電解銅めっきの薬液温度は36℃で処理時間は10分とし、無電解銅めっき厚みは0.4μmをねらった。次にビアフィリングめっきとして、アルメックスPE(株)の浸漬タイプの装置を使用し、直流電流で1A/dmにて15μmの厚みになるようにめっきを行った。銅めっき浴温度は22℃とし、ローム・アンド・ハース電子材料(株)のスルーホール用フィリング液CU-BRITE TH4をレベラー、ブライオナー、ポリマーの添加剤として使用した。銅めっき浴は硫酸銅及び硫酸、塩酸の混合液を使用した。
[Formation of via conductor 22]
After removing the smear, the multilayer plate was racked on the plating jig, and the electroless copper plating was performed by the device of Armex PE Co., Ltd., which can be immersed and rocked in the electroless copper plating tank. The chemical solution used was a mixture of Sulcup PEA manufactured by C. Uyemura & Co., Ltd. and formaldehyde. The chemical temperature of the electroless copper plating was 36 ° C., the treatment time was 10 minutes, and the thickness of the electroless copper plating was 0.4 μm. Next, as the via filling plating, an immersion type device of Almex PE Co., Ltd. was used, and plating was performed at 1 A / dm 2 with a direct current so as to have a thickness of 15 μm. The copper plating bath temperature was 22 ° C., and CU-BRITE TH4, a filling liquid for through holes manufactured by Roam & Haas Electronic Materials Co., Ltd., was used as an additive for a leveler, a brioner, and a polymer. As the copper plating bath, a mixed solution of copper sulfate, sulfuric acid and hydrochloric acid was used.

(特性評価)
 実施例1及び比較例1,2の特性を以下の方法により測定した。
(Characteristic evaluation)
The characteristics of Example 1 and Comparative Examples 1 and 2 were measured by the following methods.

[トップ径の評価]
 バイアホール121のトップ径確認のため、まず、丸本ストルアス(株)の断面研磨機にてバイアホール121の断面出しを行った。#1000の研磨紙を使用して粗削りを行い、#2400の研磨紙でバイアホール121の中心の断面を削り出し、仕上げとしてバフ研磨を行った。断面を削り出した後の観察は、金属顕微鏡Olympus(株)のGX51を使用し、50倍又は100倍に倍率を合わせて行った。実施例1及び比較例1,2について、それぞれ試料を20個作製し、トップ径の平均値及びばらつきを求めた。得られた結果を表1に示す。実施例1について、トップ径の平均値は23.1μmである事が確認できた。
[Evaluation of top diameter]
In order to confirm the top diameter of the via hole 121, first, a cross section of the via hole 121 was formed by a cross section polishing machine of Marumoto Struas Co., Ltd. Roughing was performed using # 1000 abrasive paper, a cross section at the center of the via hole 121 was cut out with # 2400 abrasive paper, and buffing was performed as a finish. The observation after cutting out the cross section was performed using a metallurgical microscope Olympus Co., Ltd. GX51 with a magnification of 50 times or 100 times. For each of Example 1 and Comparative Examples 1 and 2, 20 samples were prepared, and the average value and variation of the top diameter were determined. The results obtained are shown in Table 1. It was confirmed that the average value of the top diameter of Example 1 was 23.1 μm.

[ピール強度の評価]
 実施例1として、内層基板13の作製、内層基板13の銅表面粗化、多層板16形成のための積層処理、表層銅の全エッチング、及び、無電解銅めっき層17の形成をした後、無電解銅めっき層17の上に電解銅めっき層19を形成し、試験片を得た。また、比較例1として、内層基板113の作製、内層基板113の銅表面粗化、多層板116形成のための積層処理を行い、試験片を得た。更に、比較例2として、内層基板13の作製、内層基板13の銅表面粗化、絶縁層14の積層成型、絶縁層14の粗化処理、無電解銅めっき層17の形成をした後、無電解銅めっき層17の上に電解銅めっき層19を形成し、試験片を得た。試験片は実施例1及び比較例1,2について、それぞれ20個作製した。各試験片についてピール強度を測定し、ピール強度の平均値及び、ピール強度のばらつきを求めた。ピール強度は、試験片の下層を板などに固定し、めっき層の端を固定板方向に対して垂直に引っ張り、剥離に必要な荷重値を測定した。得られた結果を表1に示す。
[Evaluation of peel strength]
As Example 1, after preparing the inner layer substrate 13, roughening the copper surface of the inner layer substrate 13, laminating treatment for forming the multilayer plate 16, total etching of the surface layer copper, and forming the electroless copper plating layer 17. An electrolytic copper plating layer 19 was formed on the electrolytic copper plating layer 17, and a test piece was obtained. Further, as Comparative Example 1, a test piece was obtained by manufacturing the inner layer substrate 113, roughening the copper surface of the inner layer substrate 113, and laminating for forming the multilayer plate 116. Further, as Comparative Example 2, after the inner layer substrate 13 is manufactured, the copper surface of the inner layer substrate 13 is roughened, the insulating layer 14 is laminated and molded, the insulating layer 14 is roughened, and the electrolytic-free copper plating layer 17 is formed. An electrolytic copper plating layer 19 was formed on the electrolytic copper plating layer 17, and a test piece was obtained. Twenty test pieces were prepared for each of Example 1 and Comparative Examples 1 and 2. The peel strength was measured for each test piece, and the average value of the peel strength and the variation in the peel strength were obtained. For the peel strength, the lower layer of the test piece was fixed to a plate or the like, the end of the plating layer was pulled perpendicular to the direction of the fixed plate, and the load value required for peeling was measured. The results obtained are shown in Table 1.

[表面粗さの評価]
 実施例1では、内層基板13に絶縁層14と電解銅箔15とを積層して多層板16とした後、電解銅箔15を除去し、絶縁層14の表面粗さを測定した。比較例1では、内層基板113に絶縁層114と電解銅箔115とを積層して多層板116とした後、電解銅箔115を除去し、絶縁層114の表面粗さを測定した。比較例2では、内層基板13に絶縁層14を積層し、デスミア処理を行った後、絶縁層14の表面粗さを測定した。表面粗さ測定は、レーザー顕微鏡(株)KEYENCEのVK-X1000を使用し、150倍に倍率を合わせて行った。表面粗さパラメーターとして、Ra値、Rz値を各10ポイントずつ計測した。
[Evaluation of surface roughness]
In Example 1, the insulating layer 14 and the electrolytic copper foil 15 were laminated on the inner layer substrate 13 to form a multilayer plate 16, and then the electrolytic copper foil 15 was removed, and the surface roughness of the insulating layer 14 was measured. In Comparative Example 1, the insulating layer 114 and the electrolytic copper foil 115 were laminated on the inner layer substrate 113 to form a multilayer plate 116, and then the electrolytic copper foil 115 was removed, and the surface roughness of the insulating layer 114 was measured. In Comparative Example 2, the insulating layer 14 was laminated on the inner layer substrate 13 and subjected to desmear treatment, and then the surface roughness of the insulating layer 14 was measured. The surface roughness was measured by using a laser microscope Co., Ltd. KEYENCE VK-X1000 and adjusting the magnification to 150 times. As surface roughness parameters, Ra value and Rz value were measured at 10 points each.

Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001

 表1に示したように、トップ径の評価において、実施例1のSAP法は比較例1のサブトラクティブ法に比べて、小径の加工ができており、ばらつきの程度も小さかった。また、ピール強度の評価において、実施例1のSAP法は比較例2のデスミアありのSAP法に比べて、ピール強度のばらつきが小さかった。更に、表面粗さの評価において、実施例1のSAP法は比較例2のデスミアありのSAP法に比べて、表面粗さRaについてはばらつきが大きく、表面粗さRzについては値及びばらつき共に大きかった。すなわち、本実施例によれば、バイアホールの孔径を小さくすることができ、かつ、導体パターンの形成性を向上させることができることが分かった。 As shown in Table 1, in the evaluation of the top diameter, the SAP method of Example 1 was able to process a smaller diameter than the subtractive method of Comparative Example 1, and the degree of variation was small. Further, in the evaluation of the peel strength, the SAP method of Example 1 had a smaller variation in the peel strength than the SAP method with desmear of Comparative Example 2. Further, in the evaluation of the surface roughness, the SAP method of Example 1 has a large variation in the surface roughness Ra and the value and the variation of the surface roughness Rz are larger than those of the SAP method with desmear in Comparative Example 2. rice field. That is, according to this embodiment, it was found that the hole diameter of the via hole can be reduced and the formability of the conductor pattern can be improved.

 以上説明した通り、本発明のプリント配線板の製造方法によれば、バイアホールの孔径を小さくすることができ、かつ、導体パターンの形成性を向上させることができるので、近年の情報端末機器や通信機器などの高集積・高密度化対応のプリント配線板の製造方法として有効に利用可能である。 As described above, according to the method for manufacturing a printed wiring board of the present invention, the hole diameter of the via hole can be reduced and the formability of the conductor pattern can be improved. It can be effectively used as a manufacturing method for printed wiring boards that support high integration and high density of communication equipment.

 11…絶縁基板、12…内層回路、12a…導体パターン、13…内層基板、14…絶縁層、15…電解銅箔、16…多層板、17…無電解銅めっき層、18…レジストパターン、19…電解めっき層、20…マスク、21…バイアホール、22…バイア導体、23…導体パターン 11 ... Insulation substrate, 12 ... Inner layer circuit, 12a ... Conductor pattern, 13 ... Inner layer substrate, 14 ... Insulation layer, 15 ... Electrolytic copper foil, 16 ... Multilayer plate, 17 ... Electrolytic copper plating layer, 18 ... Resist pattern, 19 ... Electrolytic plating layer, 20 ... Mask, 21 ... Via hole, 22 ... Via conductor, 23 ... Conductor pattern

Claims (3)

 内層回路を形成した内層基板の上に、絶縁層と電解銅箔とをこの順に積層して多層板を形成する工程と、
 前記多層板から前記電解銅箔を除去し、前記絶縁層を露出させる工程と、
 前記絶縁層を露出させた後、前記絶縁層の表面に無電解銅めっき層を設ける工程と、
 前記無電解銅めっき層の上にレジスト層を設け、露光及び現像を行い、バイアホールを形成する部分を残したレジストパターンを形成する工程と、
 前記レジストパターンをめっきレジストとして、前記無電解銅めっき層の表面に電解銅めっき層を設ける工程と、
 前記電解銅めっき層を設けた後、前記レジストパターンを除去する工程と、
 前記レジストパターンを除去した後、前記電解銅めっき層をエッチングレジストとして、前記無電解銅めっき層をエッチングし、バイアホール形成用のマスクを形成する工程と、
 前記マスクを形成した後、前記絶縁層のうち、前記マスクで覆われていない部分をレーザーにより除去し、バイアホールを形成する工程と
 を含むことを特徴とするプリント配線板の製造方法。
A process of laminating an insulating layer and an electrolytic copper foil in this order on an inner layer substrate on which an inner layer circuit is formed to form a multilayer board.
A step of removing the electrolytic copper foil from the multilayer plate to expose the insulating layer,
After exposing the insulating layer, a step of providing an electroless copper plating layer on the surface of the insulating layer, and
A step of providing a resist layer on the electroless copper plating layer and performing exposure and development to form a resist pattern in which a portion forming a via hole is left.
A step of providing an electrolytic copper plating layer on the surface of the electrolytic copper plating layer using the resist pattern as a plating resist, and
After providing the electrolytic copper plating layer, the step of removing the resist pattern and
After removing the resist pattern, the electrolytic copper plating layer is used as an etching resist, and the electrolytic copper plating layer is etched to form a mask for forming a via hole.
A method for manufacturing a printed wiring board, which comprises a step of forming a via hole by removing a portion of the insulating layer not covered with the mask by a laser after forming the mask.
 前記バイアホールのトップ径平均値が25μm以下であることを特徴とする請求項1に記載のプリント配線板の製造方法。 The method for manufacturing a printed wiring board according to claim 1, wherein the average value of the top diameter of the via hole is 25 μm or less.  前記レジストパターンを形成した後、前記電解銅めっき層を設ける前に、スカムを除去する工程を含むことを特徴とする請求項1に記載のプリント配線板の製造方法。 The method for manufacturing a printed wiring board according to claim 1, further comprising a step of removing scum after forming the resist pattern and before providing the electrolytic copper plating layer.
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US20220375787A1 (en) * 2021-05-18 2022-11-24 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
WO2024029431A1 (en) * 2022-08-04 2024-02-08 三菱瓦斯化学株式会社 Method for producing printed wiring board

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JPH1154920A (en) * 1997-08-05 1999-02-26 Ibiden Co Ltd Manufacturing printed wiring board
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JP2006179822A (en) * 2004-12-24 2006-07-06 Cmk Corp Printed wiring board and manufacturing method thereof
JP2009283668A (en) * 2008-05-22 2009-12-03 Sharp Corp Method of manufacturing printed-wiring board

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JP5483658B2 (en) * 2010-07-29 2014-05-07 京セラSlcテクノロジー株式会社 Wiring board manufacturing method
US11705365B2 (en) * 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging

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JPH1154920A (en) * 1997-08-05 1999-02-26 Ibiden Co Ltd Manufacturing printed wiring board
JP2000059033A (en) * 1998-08-04 2000-02-25 Sumitomo Kinzoku Electro Device:Kk Multilayer circuit board and manufacture thereof
JP2006179822A (en) * 2004-12-24 2006-07-06 Cmk Corp Printed wiring board and manufacturing method thereof
JP2009283668A (en) * 2008-05-22 2009-12-03 Sharp Corp Method of manufacturing printed-wiring board

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220375787A1 (en) * 2021-05-18 2022-11-24 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
US11705365B2 (en) * 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
WO2024029431A1 (en) * 2022-08-04 2024-02-08 三菱瓦斯化学株式会社 Method for producing printed wiring board

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