JP2003298205A - Manufacturing method of printed wiring board - Google Patents
Manufacturing method of printed wiring boardInfo
- Publication number
- JP2003298205A JP2003298205A JP2003020081A JP2003020081A JP2003298205A JP 2003298205 A JP2003298205 A JP 2003298205A JP 2003020081 A JP2003020081 A JP 2003020081A JP 2003020081 A JP2003020081 A JP 2003020081A JP 2003298205 A JP2003298205 A JP 2003298205A
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- printed wiring
- layer
- peeling
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 57
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 43
- 229920005989 resin Polymers 0.000 claims abstract description 23
- 239000011347 resin Substances 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 15
- 230000008961 swelling Effects 0.000 claims abstract description 14
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 10
- 238000009713 electroplating Methods 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 239000007864 aqueous solution Substances 0.000 claims description 22
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000011889 copper foil Substances 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 4
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 43
- 206010040844 Skin exfoliation Diseases 0.000 description 38
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 239000010949 copper Substances 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000007747 plating Methods 0.000 description 11
- 238000009413 insulation Methods 0.000 description 10
- 239000000654 additive Substances 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000007788 roughening Methods 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229920001342 Bakelite® Polymers 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 3
- 239000012286 potassium permanganate Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- WTDHULULXKLSOZ-UHFFFAOYSA-N Hydroxylamine hydrochloride Chemical compound Cl.ON WTDHULULXKLSOZ-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 235000011181 potassium carbonates Nutrition 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- ZNBNBTIDJSKEAM-UHFFFAOYSA-N 4-[7-hydroxy-2-[5-[5-[6-hydroxy-6-(hydroxymethyl)-3,5-dimethyloxan-2-yl]-3-methyloxolan-2-yl]-5-methyloxolan-2-yl]-2,8-dimethyl-1,10-dioxaspiro[4.5]decan-9-yl]-2-methyl-3-propanoyloxypentanoic acid Chemical compound C1C(O)C(C)C(C(C)C(OC(=O)CC)C(C)C(O)=O)OC11OC(C)(C2OC(C)(CC2)C2C(CC(O2)C2C(CC(C)C(O)(CO)O2)C)C)CC1 ZNBNBTIDJSKEAM-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- -1 alcohol amine Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- GLGSRACCZFMWDT-UHFFFAOYSA-N dilithium;oxido-(oxido(dioxo)chromio)oxy-dioxochromium Chemical compound [Li+].[Li+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O GLGSRACCZFMWDT-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910000378 hydroxylammonium sulfate Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 229910002096 lithium permanganate Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、プリント配線板の
製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a printed wiring board.
【0002】[0002]
【従来の技術】近年、電子機器の高機能化並びに軽薄短
小化の要求に伴い、電子部品の高密度集積化と高密度実
装化が進んでいる。プリント配線板も、この軽薄短小化
の要求によって配線密度がより高く、配線層数が複数に
なるなどより高精度な加工プロセスが望まれるようにな
ってきている。2. Description of the Related Art In recent years, high-density integration and high-density mounting of electronic components have been advanced in response to demands for higher functionality, lighter, thinner, shorter and smaller electronic devices. Due to the demand for light, thin, short, and small printed wiring boards, there is a growing demand for higher-precision processing processes such as higher wiring density and a plurality of wiring layers.
【0003】これらのプリント配線板は、配線パターン
を形成する方法として、一般的には銅箔をエッチングす
る手法(サブトラクティブ法)、電解銅めっきによる手
法(フル・セミアディティブ法)等がある。サブトラク
ティブ法では、形成される回路高さは使用する銅箔の厚
みで規定されるという特徴があり、エッチャントの反応
特性および使用する装置の能力に依存するエッチング限
界が存在するため、配線の微細化および高密度化には不
向きとされている。また、セミアディティブ法では配線
層を形成した後の給電層のフラッシュエッチングによる
除去が、ファインパターン領域では十分に行うことが困
難な場合があり、回路間のイオンマイグレーションによ
るショートなどの不具合が発生する問題があった。一
方、フルアディティブ法は、自由な回路設計に対応でき
るというメリットから、特に注目され始めている。In these printed wiring boards, as a method for forming a wiring pattern, there are generally a method of etching a copper foil (subtractive method), a method of electrolytic copper plating (full semi-additive method) and the like. The subtractive method is characterized in that the height of the formed circuit is defined by the thickness of the copper foil used, and there is an etching limit that depends on the reaction characteristics of the etchant and the capability of the equipment used. It is not suitable for high density and high density. Further, in the semi-additive method, it may be difficult to sufficiently remove the power supply layer by flash etching after forming the wiring layer in the fine pattern region, which causes a problem such as a short circuit due to ion migration between circuits. There was a problem. On the other hand, the full-additive method has begun to receive particular attention because of its merit of being able to deal with free circuit design.
【0004】いずれの方法を適用する場合でも、紫外線
感光型のアルカリ現像型フォトレジストによる配線パタ
ーン像が形成されるのが一般的である。フォトレジスト
にはドライタイプのものと液状タイプのものがあり、目
的に応じて使い分けられるが配線パターン像が形成され
た状態ではいずれの場合も固体状態となる。配線が微細
化するにつれ、これらのフォトレジスト像も微細化する
ため、現像、エッチング工程あるいは電解メッキなどの
湿式工程に於いても下地との高い密着が得られるように
改良が重ねられてきた。Regardless of which method is applied, it is general that an image of a wiring pattern is formed by an ultraviolet-sensitive alkaline developing photoresist. The photoresist is classified into a dry type and a liquid type, which can be selectively used according to the purpose, but in any state where a wiring pattern image is formed, it is in a solid state. As the wiring becomes finer, these photoresist images also become finer, and therefore improvements have been made to obtain high adhesion to the base even in wet processes such as development, etching and electrolytic plating.
【0005】特に、微細配線用途向けのフォトレジスト
については高い密着力が設計されている上、予め下地に
粗化処理を行うことによるアンカー効果で、さらに高い
密着力が得られる状態となる場合がある。これらのフォ
トレジストの剥離には通常は水酸化ナトリウム、アルコ
ール系アミン、テトラメチルアンモニウムハイドロオキ
サイドなどを含んだアルカリ水溶液が水平搬送型スプレ
ー方式にて用いられる。アルカリ水溶液による剥離機構
は、通常は膨潤によるものであるため、剥離後のフォト
レジスト形状は一般的に剥離片と呼ばれる小片の状態に
なる。ところが配線の微細化によりフォトレジスト層が
剥離できなくなる場合が最近になって顕在化してきた。
剥離残渣が存在した場合、その後の絶縁層の形成不良や
給電層除去不良など工程歩留まりを大きく低下させる一
因となりうる。特にアディティブ工法の場合は、メッキ
で形成した配線間にフォトレジスト層が閉じこめられる
環境下に置かれるため、十分に膨潤できなかったり、配
線がフォトレジスト層に対してオーバーハングした場合
には、物理的に更に剥離が困難な状態となる問題があっ
た。この問題に対して、従来は剥離片をできるだけ小さ
くするようにアルカリ水溶液の濃度、添加剤を調整した
り、高圧スプレーや超音波の照射など物理的な力によ
り、フォトレジスト層の破壊を行ったりしたが、微細化
の進展に対応しきれていないのが現状である。In particular, a photoresist for use in fine wiring is designed to have a high adhesive force, and in some cases, a higher adhesive force may be obtained due to the anchoring effect of the roughening treatment of the underlayer. is there. To remove these photoresists, an aqueous alkali solution containing sodium hydroxide, alcohol amine, tetramethylammonium hydroxide, etc. is usually used in a horizontal transfer spray method. Since the peeling mechanism using an alkaline aqueous solution is usually based on swelling, the shape of the photoresist after peeling is generally in the form of small pieces called peeling pieces. However, it has recently become apparent that the photoresist layer cannot be peeled off due to the finer wiring.
If the peeling residue is present, it can be one of the factors that greatly reduce the process yield such as a defective formation of the insulating layer and a defective removal of the power feeding layer. In the case of the additive method in particular, the photoresist layer is placed in an environment where it is confined between the wiring formed by plating, so if it cannot swell sufficiently or if the wiring overhangs against the photoresist layer, the physical However, there is a problem that the peeling becomes more difficult. To solve this problem, conventionally, the concentration of the alkaline aqueous solution and additives were adjusted so as to make the peeling pieces as small as possible, and the photoresist layer was destroyed by physical force such as high-pressure spray or ultrasonic wave irradiation. However, the current situation is that it has not fully responded to the progress of miniaturization.
【0006】また、下地に粗化処理を施した場合、配線
密度が比較的低い領域に於いても、粗化の微小凹凸に食
い込んだ状態でフォトレジストの残渣が発生する場合も
あった。この問題に対しては、アルカリ水溶液での対応
は困難で、主として高圧スプレーや超音波などの物理的
な力を利用していたが、均一に残渣を除去することは困
難であった。しかも、これにより基板材料の一部や配線
層そのものを破壊する不具合が発生する場合もあった。Further, when the base is subjected to a roughening treatment, a residue of the photoresist may be generated in a state where it is bitten into the roughening fine irregularities even in a region where the wiring density is relatively low. It is difficult to deal with this problem with an alkaline aqueous solution, and mainly physical force such as high-pressure spray or ultrasonic waves was used, but it was difficult to uniformly remove the residue. In addition, this may cause a problem that a part of the substrate material or the wiring layer itself is destroyed.
【0007】また、フォトレジストエッチングの剥離残
り防止に酸化剤を用いることが開示されている(例え
ば、特許文献1参照。)。酸化剤による剥離残りの分解
速度が比較的遅い場合が多く、特に厚膜のフォトレジス
トを処理する場合に完全に除去するのに問題が生じ、良
好な生産性が得られない。また、長時間の酸化剤処理に
よって絶縁樹脂の溶解が起こることもあり、配線浮き、
剥がれなどの不具合が生じる場合があった。Further, it is disclosed that an oxidizing agent is used to prevent peeling residue in photoresist etching (see, for example, Patent Document 1). In many cases, the decomposition rate of the residue of peeling by the oxidizing agent is relatively slow, and there is a problem in complete removal especially when processing a thick film photoresist, and good productivity cannot be obtained. In addition, the insulating resin may dissolve due to long-term oxidant treatment, causing wiring floating.
Problems such as peeling may occur.
【0008】[0008]
【特許文献1】特開2001−217526号公報(第
2項)[Patent Document 1] Japanese Patent Laid-Open No. 2001-217526 (paragraph 2)
【0009】[0009]
【発明が解決しようとする課題】本発明は、生産性の高
い処理方法でありながら、フォトレジスト剥離残渣が発
生せず、高い製造歩留まりで高品質、高密度プリント配
線板の製造方法を提供することを目的とする。The present invention provides a method of manufacturing a high-quality, high-density printed wiring board with a high production yield, which does not generate a photoresist peeling residue, even though it is a highly productive processing method. The purpose is to
【0010】[0010]
【課題を解決するための手段】本発明者らは、プリント
配線板の配線層形成におけるフォトレジスト層の除去
で、膨潤剥離工程とレジスト剥離工程とからなる薬液処
理工程を行うことで、フォトレジスト剥離残渣が発生せ
ず、高い信頼性を有する配線が安定して得られることを
見出し、更に検討をすることにより、本発明を完成する
に至った。即ち、本発明は、(1)配線が、樹脂付銅箔
もしくは樹脂付銅合金板表面にフォトレジスト層を形成
し、露光、現像後にエッチングにより形成されてなるプ
リント配線板において、フォトレジスト層の除去が、膨
潤剥離工程とレジスト残渣除去工程とからなる薬液処理
工程により行われることを特徴とするプリント配線板の
製造方法、(2)配線が、導電性フレームもしくは給電
層表面上にフォトレジスト層を形成し、露光、現像後に
電解メッキにより形成されてなるプリント配線板におい
て、フォトレジスト層の除去が、膨潤剥離工程とレジス
ト残渣除去工程とからなる薬液処理工程により行われる
ことを特徴とするプリント配線板の製造方法、(3)膨
潤剥離工程が、アルカリ水溶液により行われ、レジスト
残渣除去工程が、酸化樹脂エッチング剤もしくは有機溶
剤により行われる、前記第(1)項又は第(2)項に記
載のプリント配線板の製造方法、(4)酸化樹脂エッチ
ング剤による処理に続いて、還元剤による処理が行われ
る、前記第(3)項記載のプリント配線板の製造方法、
(5)レジスト残渣除去工程が、超音波を印加して行わ
れる第(1)〜(4)のいずれかに記載のプリント配線
板の製造方法、である。Means for Solving the Problems The inventors of the present invention have carried out a chemical solution treatment step consisting of a swelling peeling step and a resist peeling step in the removal of the photoresist layer in forming a wiring layer of a printed wiring board. The present invention has been completed by finding out that a wiring having a high reliability can be stably obtained without generating a peeling residue and further studying. That is, the present invention provides (1) a printed wiring board in which a wiring is formed by forming a photoresist layer on the surface of a resin-coated copper foil or a resin-coated copper alloy plate, and exposing and developing the film to form a photoresist layer. A method for manufacturing a printed wiring board, characterized in that the removal is performed by a chemical solution treatment step including a swelling and peeling step and a resist residue removing step, and (2) the wiring has a photoresist layer on the surface of the conductive frame or the power feeding layer. A printed wiring board formed by electroplating after forming, exposing, and developing, wherein the removal of the photoresist layer is performed by a chemical solution treatment step including a swelling peeling step and a resist residue removing step. The wiring board manufacturing method (3) swelling and peeling step is performed with an alkaline aqueous solution, and the resist residue removing step is performed with an oxide resin The method for producing a printed wiring board according to the above (1) or (2), which is carried out with a tinging agent or an organic solvent, and (4) treatment with an oxidizing resin etching agent, followed by treatment with a reducing agent. A method for manufacturing a printed wiring board according to the item (3),
(5) The method for producing a printed wiring board according to any one of (1) to (4), wherein the resist residue removing step is performed by applying ultrasonic waves.
【0011】[0011]
【発明の実施の形態】本発明のプリント配線板の製造方
法は、基材上に形成される配線において、樹脂付銅箔又
は樹脂付銅合金板表面にフォトレジスト層を形成し、露
光、現像後に銅箔又は銅合金板をエッチングにより形成
されるサブトラクティブ法、及び導電性フレーム又は給
電層表面上にフォトレジスト層を形成し、露光、現像後
に電解メッキにより形成されるアディティブ法に適用で
きる。BEST MODE FOR CARRYING OUT THE INVENTION A method for manufacturing a printed wiring board according to the present invention comprises forming a photoresist layer on the surface of a resin-coated copper foil or a resin-coated copper alloy plate in a wiring formed on a substrate, and exposing and developing it. The present invention can be applied to a subtractive method in which a copper foil or a copper alloy plate is subsequently formed by etching, and an additive method in which a photoresist layer is formed on the surface of a conductive frame or a power feeding layer, and exposure and development are followed by electrolytic plating.
【0012】以下、本発明の実施形態について説明する
が、本発明はこれによって何ら限定されるものではな
い。Embodiments of the present invention will be described below, but the present invention is not limited thereto.
【0013】本発明のプリント配線板の製造方法に適用
される基材としては、サブトラクティブ法において、フ
レキシブルプリント配線板に用いられる銅箔または銅合
金板付ポリイミドフィルムや、リジット配線板に用いら
れる銅箔または銅合金板付ガラス・エポキシ系基板など
が挙げられる。アディティブ法においては、銅、銅合金
板のような導電性フレームを用いてもよいし、絶縁樹脂
層に無電解銅メッキなどの給電層を形成しても良い。As the base material applied to the method for producing a printed wiring board of the present invention, in the subtractive method, a copper foil or a polyimide film with a copper alloy plate used for a flexible printed wiring board or a copper used for a rigid wiring board is used. Examples include glass / epoxy type substrates with foil or copper alloy plate. In the additive method, a conductive frame such as copper or a copper alloy plate may be used, or a power feeding layer such as electroless copper plating may be formed on the insulating resin layer.
【0014】配線の形成方法としては、まず、基材表面
に酸処理などの表面処理を行った後、フォトレジスト層
を形成する。ここで、表面処理液は目的とするプリント
配線板の仕様に沿って適宜選択が可能である。例えば、
硫酸、硫酸と過酸化水素水の混合物、過硫酸ソーダ、過
硫酸アンモニウム、硝酸、塩酸、蟻酸、酸性フッ化アン
モニウムなどが挙げられる。もちろん複数を組み合わせ
て行ってもよい。アディティブ法による微細配線を形成
する場合は、アンカー効果が得られフォトレジスト層の
密着力が向上する粗化処理を行うことが好ましい。ま
た、フォトレジスト層には、感光性を具備していてパタ
ーニング可能なものであれば使用できるが、生産性と環
境保護の観点からはアルカリ可溶性のドライフィルムレ
ジストが好ましい。As a method of forming the wiring, first, the surface of the base material is subjected to surface treatment such as acid treatment, and then a photoresist layer is formed. Here, the surface treatment liquid can be appropriately selected according to the intended specifications of the printed wiring board. For example,
Examples thereof include sulfuric acid, a mixture of sulfuric acid and hydrogen peroxide water, sodium persulfate, ammonium persulfate, nitric acid, hydrochloric acid, formic acid, and ammonium acid fluoride. Of course, a plurality of combinations may be performed. When the fine wiring is formed by the additive method, it is preferable to perform a roughening treatment so that the anchor effect is obtained and the adhesion of the photoresist layer is improved. The photoresist layer can be used as long as it has photosensitivity and can be patterned, but an alkali-soluble dry film resist is preferable from the viewpoint of productivity and environmental protection.
【0015】次に、フォトレジスト層に所定のパターン
像を描画した露光用マスクを介して露光し、現像する。
露光用マスクには乳化銀塩を固着させたフィルムマス
ク、ガラスマスク、クロム蒸着したガラスマスクなどを
用いることができる。またアルカリ可溶性のフォトレジ
スト層であれば、現像には、リチウム、ナトリウム、カ
リウムなどのアルカリ金属類の炭酸塩、あるいは水酸化
物の水溶液やテトラメチルアンモニウムハイドロオキサ
イドの水溶液などを用いることができるが、コスト・環
境面の観点から、通常は炭酸ナトリウム水溶液が用いら
れる。Next, the photoresist layer is exposed through a mask for exposure in which a predetermined pattern image is drawn and developed.
As the exposure mask, a film mask to which an emulsion silver salt is fixed, a glass mask, a chromium-deposited glass mask, or the like can be used. Further, in the case of an alkali-soluble photoresist layer, for the development, a carbonate of an alkali metal such as lithium, sodium or potassium, or an aqueous solution of hydroxide or an aqueous solution of tetramethylammonium hydroxide can be used. From the viewpoint of cost and environment, an aqueous sodium carbonate solution is usually used.
【0016】次に、サブトラクティブ工法の場合は、基
材上の銅箔又は銅合金板をエッチングすることにより導
体回路を形成する。エッチングには、通常、塩化第二鉄
系水溶液や塩化第二銅系水溶液が用いられるが、基材銅
箔又は銅合金板を溶解除去できる酸性の薬液であれば使
用することができる。例えば、硫酸と過酸化水素水の混
合物、過硫酸ナトリウム水溶液などが挙げられる。一
方、アディティブ工法では、電解銅メッキによって基材
上に導体配線を形成する。この時、導電性フレームの場
合、これを給電層としてメッキを行う。銅メッキ液には
硫酸銅、ピロリン酸銅メッキ浴などの酸性浴が好適であ
る。Next, in the case of the subtractive method, a conductor circuit is formed by etching the copper foil or the copper alloy plate on the base material. For etching, a ferric chloride-based aqueous solution or a cupric chloride-based aqueous solution is usually used, but any acidic chemical solution capable of dissolving and removing the base copper foil or the copper alloy plate can be used. For example, a mixture of sulfuric acid and hydrogen peroxide water, an aqueous solution of sodium persulfate, etc. may be mentioned. On the other hand, in the additive method, conductor wiring is formed on the base material by electrolytic copper plating. At this time, in the case of a conductive frame, plating is performed using this as a power feeding layer. An acidic bath such as a copper sulfate or copper pyrophosphate plating bath is suitable for the copper plating solution.
【0017】次に、フォトレジスト層を膨潤剥離工程と
レジスト残渣除去工程とからなる2段階の薬液処理工程
により剥離する。まず、膨潤剥離工程においては、安価
でかつフォトレジストを膨潤・小片化させる効果の高い
アルカリ性水溶液を薬液処理に用いるのがもっとも好ま
しい。例えば、アルカリ金属類の水酸化物水溶液、炭酸
塩水溶液、アミン水溶液などが挙げられ、具体的にはア
ルカリ金属類の水酸化物としては、水酸化リチウム、水
酸化ナトリウム、水酸化カリウムなど、炭酸塩として
は、炭酸リチウム、炭酸ナトリウム、炭酸カリウムな
ど、アミンとしては、エタノールアミン、テトラメチル
アンモニウムハイドロオキサイドなどである。もちろん
これらの複数を混合して用いてもよい。また、膨潤剥離
工程に用いる処理方式としては、水平搬送式のスプレー
装置、浸漬型装置、あるいはラック式の浸漬装置などを
基板の形態に応じて適宜選択し、使用することができ
る。Next, the photoresist layer is peeled off by a two-step chemical treatment process including a swelling peeling process and a resist residue removing process. First, in the swelling and peeling step, it is most preferable to use an alkaline aqueous solution, which is inexpensive and has a high effect of swelling and fragmenting the photoresist, for the chemical treatment. Examples include alkali metal hydroxide aqueous solutions, carbonate aqueous solutions, amine aqueous solutions, and the like. Specific examples of the alkali metal hydroxides include lithium hydroxide, sodium hydroxide, potassium hydroxide, and carbonates. Examples of salts include lithium carbonate, sodium carbonate and potassium carbonate, and examples of amines include ethanolamine and tetramethylammonium hydroxide. Of course, a plurality of these may be mixed and used. Further, as the treatment method used in the swelling and peeling step, a horizontal transfer type spray device, an immersion type device, a rack type immersion device, or the like can be appropriately selected and used according to the form of the substrate.
【0018】次に、水洗工程を経た後に、レジスト残渣
除去工程の薬液処理を行い、膨潤剥離工程で発生する微
小なレジスト残渣を完全に除去する。レジスト残渣除去
工程において、使用する薬液としてはフォトレジストを
溶解できるものが好ましい。例えば、酸化性樹脂エッチ
ング剤、有機溶剤などが挙げられ、具体的には、酸化性
樹脂エッチング剤として、過マンガン酸リチウム、過マ
ンガン酸ナトリウム、過マンガン酸カリウム、ニクロム
酸リチウム、ニクロム酸ナトリウム、ニクロム酸カリウ
ムなど、有機溶剤として、ジメチルケトン、ジエチルケ
トン、メチルエチルケトン、ジメチルスルフォキシド、
N-メチル-2-ピロリドンなどである。これらは単独で
用いることもできるが、複数を混合して用いてもよい。
酸化性樹脂エッチング剤や有機溶剤による樹脂溶解速度
は比較的遅いので、生産性の観点からは2段階の剥離方
式として1段階目でレジストをできるだけ剥離しておい
た方が有利である。また、2段階目の酸化性樹脂エッチ
ング剤処理においては、回路銅表面も酸化される場合が
あるので、酸性のアミン水溶液などによる還元処理を行
うのがもっとも好ましい。酸性のアミン水溶液で処理す
ることにより、酸化性樹脂エッチング剤由来のアルカリ
残渣成分も同時に中和除去することができるためであ
る。例えば、塩酸ヒドロキシルアミン、硫酸ヒドロキシ
ルアミンなどが挙げられる。また、レジスト残渣除去工
程の薬液処理の方式としては、水平搬送式あるいはラッ
ク式のスプレー装置、浸漬型装置などを基板の形態に応
じて適宜選択し、使用することができる。さらに浸漬型
装置を用いた浸漬処理において、超音波を印加すること
でレジスト残渣除去をさらに完全なるものとすることが
出来る。このとき、微細な配線に対しては超音波による
破壊などの不具合も考えられるが、出力および周波数の
制御により容易に回避することが可能である。この条件
については、配線ルール、配線と下地との密着力、使用
する薬液の粘度などにより、適宜調整され適用されるも
ので特に限定されるものではない。Next, after passing through a water washing step, a chemical treatment in a resist residue removing step is performed to completely remove minute resist residues generated in the swelling and peeling step. In the resist residue removing step, the chemical liquid used is preferably one that can dissolve the photoresist. For example, oxidizing resin etching agents, organic solvents and the like, specifically, as the oxidizing resin etching agent, lithium permanganate, sodium permanganate, potassium permanganate, lithium dichromate, sodium dichromate, Organic solvents such as potassium dichromate, dimethyl ketone, diethyl ketone, methyl ethyl ketone, dimethyl sulfoxide,
N-methyl-2-pyrrolidone and the like. These can be used alone, or a plurality of them may be mixed and used.
Since the rate of resin dissolution by an oxidizing resin etching agent or an organic solvent is relatively slow, it is advantageous from the viewpoint of productivity to remove the resist as much as possible in the first stage as a two-stage stripping method. Further, in the second step of the oxidizing resin etching agent treatment, the surface of the circuit copper may be oxidized, so that it is most preferable to perform the reduction treatment with an acidic amine aqueous solution or the like. This is because the alkaline residue component derived from the oxidizing resin etching agent can be neutralized and removed at the same time by treating with an acidic amine aqueous solution. Examples thereof include hydroxylamine hydrochloride and hydroxylamine sulfate. As a method of chemical treatment in the resist residue removing step, a horizontal transfer type or rack type spray device, an immersion type device, etc. can be appropriately selected and used according to the form of the substrate. Further, in the dipping process using the dipping type device, the resist residue can be removed more completely by applying ultrasonic waves. At this time, although problems such as damage due to ultrasonic waves may be considered for fine wiring, it is possible to easily avoid it by controlling the output and frequency. This condition is appropriately adjusted and applied according to the wiring rule, the adhesion between the wiring and the base, the viscosity of the chemical solution used, etc., and is not particularly limited.
【0019】次に、ソルダーレジスト、絶縁層を形成
し、本発明のプリント配線板製造方法によるプリント配
線板を得ることができる。Next, a solder resist and an insulating layer are formed to obtain a printed wiring board according to the method for producing a printed wiring board of the present invention.
【0020】[0020]
【実施例】以下、実施例により更に具体的に説明する
が、本発明はこれによって何ら限定されるものではな
い。EXAMPLES Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited thereto.
【0021】(実施例1)総厚さが0.3mmで銅箔厚
さが12μmの両面銅張り積層板101(図1(a))
(住友ベークライト(株)製ELC−4781)を用い
て、サブトラクティブ工法(図示なし)により最小線幅
/線間が50/50μmの2層配線の内層導体回路10
2を製作した(図1(b))。次に内層導体回路102
に過酸化水素水と硫酸を主成分とする薬液(旭電化工業
(株)製テックSO−G)をスプレー吹きつけすること
により粗化処理による凹凸形成を行い、厚さ25μmの
ドライフィルムタイプの熱硬化性層間絶縁樹脂(住友ベ
ークライト(株)製AT−3001)を、真空ラミネー
ターを使用して配線を埋め込み、150℃で30分間の
ベーキング処理を行い、絶縁樹脂層103を形成した
(図1(c))。次に、UV−YAGレーザ装置(三菱
電機(株)製ML605LDX)を用いてφ40μmの
ブラインド・ヴィアホール104を形成し(図1
(d))、デスミア処理(日本マクダーミッド(株)製
マキュダイザーシリーズ)を施した後、無電解銅めっき
(上村工業(株)製スルカップPRX)を15分間行
い、厚さ0.5μmの給電層105を形成した(図2
(e))。次に、この給電層表面に、厚さ25μmの紫
外線感光性ドライフィルム106(旭化成(株)製AQ
−2558)をホットロールラミネーターにより貼り合
わせ、最小線幅/線間が20/20μmのパターンが描
画されたクロム蒸着マスク((株)トウワプロセス製)
を使用して、位置合わせ(図2(f))、露光装置(ウ
シオ電機(株)製UX−1100SM−AJN01)に
より露光した。炭酸ソーダ水溶液にて現像し、めっきレ
ジスト107を形成した(図2(g))。Example 1 A double-sided copper-clad laminate 101 having a total thickness of 0.3 mm and a copper foil thickness of 12 μm (FIG. 1 (a))
(ELC-4781 manufactured by Sumitomo Bakelite Co., Ltd.) is used to perform a subtractive process (not shown) to form a two-layer wiring inner layer conductor circuit 10 having a minimum line width / line spacing of 50/50 μm.
2 was manufactured (FIG. 1 (b)). Next, the inner conductor circuit 102
Roughening is performed by spraying a chemical solution containing hydrogen peroxide and sulfuric acid as main components (Tech SO-G manufactured by Asahi Denka Kogyo Co., Ltd.) on the surface to form a dry film type 25 μm thick film. A thermosetting interlayer insulating resin (AT-3001 manufactured by Sumitomo Bakelite Co., Ltd.) was used to bury wiring using a vacuum laminator, and a baking treatment was performed at 150 ° C. for 30 minutes to form an insulating resin layer 103 (FIG. 1). (C)). Next, a blind via hole 104 having a diameter of 40 μm was formed using a UV-YAG laser device (ML605LDX manufactured by Mitsubishi Electric Corporation) (see FIG. 1).
(D)), after performing desmear treatment (McDuizer series manufactured by MacDermid Japan Co., Ltd.), electroless copper plating (Sulcup PRX manufactured by Uemura Kogyo Co., Ltd.) is performed for 15 minutes to form a power feeding layer having a thickness of 0.5 μm. 105 (FIG. 2)
(E)). Next, a 25 μm thick UV-sensitive dry film 106 (AQ manufactured by Asahi Kasei Corp.) was formed on the surface of the power feeding layer.
(2558) are pasted together by a hot roll laminator, and a chromium vapor deposition mask (manufactured by Towa Process Co., Ltd.) on which a pattern having a minimum line width / line spacing of 20/20 μm is drawn
2) was used for alignment (FIG. 2 (f)), and exposure was performed using an exposure device (UX-1100SM-AJN01 manufactured by USHIO INC.). It was developed with an aqueous solution of sodium carbonate to form a plating resist 107 (FIG. 2 (g)).
【0022】次に、給電層105を電極として電解銅め
っき(奥野製薬(株)81−HL)を3A/dm2、3
0分間行って、厚さ約20μmの銅配線108を形成し
た(図3(h))。ここで図4に示したような処理工程
からなる2段階剥離機を用いて、前記めっきレジスト1
07を剥離した。各薬液は、1段階目のアルカリ水溶液
層にはモノエタノールアミン溶液(三菱瓦斯化学(株)
製R−100)、2段階目の酸化性樹脂エッチング剤に
は過マンガン酸カリウムと水酸化ナトリウムを主成分と
する水溶液(日本マクダーミッド(株)製マキュダイザ
ー9275、9276)、中和には酸性アミン水溶液
(日本マクダーミッド(株)製マキュダイザー927
9)をそれぞれ用いた。Next, electrolytic copper plating (81-HL, Okuno Seiyaku Co., Ltd.) was used at 3 A / dm 2 , 3 with the power feeding layer 105 as an electrode.
After 0 minutes, a copper wiring 108 having a thickness of about 20 μm was formed (FIG. 3 (h)). Here, using the two-step stripper consisting of the treatment steps as shown in FIG.
07 was peeled off. Each chemical solution contains a monoethanolamine solution (Mitsubishi Gas Chemical Co., Ltd.) in the first-stage alkaline aqueous solution layer.
R-100 manufactured by R-100), and an aqueous solution containing potassium permanganate and sodium hydroxide as main components for the second-stage oxidative resin etching agent (Mccudizer 9275, 9276 manufactured by Nippon Macdermid Co., Ltd.), and acidic for neutralization. Amine aqueous solution (McDuizer 927 manufactured by Nippon MacDermid Co., Ltd.
9) was used respectively.
【0023】次に、給電層105を過硫酸アンモニウム
水溶液(メルテックス(株)製AD−485)に浸漬処
理することで、エッチング除去し、配線間の絶縁を確保
した(図3(i))。最後に、回路表面にドライフィル
ムタイプのソルダーレジスト109(住友ベークライト
(株)製CFP−1121)を真空ラミネーターにて回
路埋め込みを行いながら形成した(図3(j))。Next, the power supply layer 105 was immersed in an aqueous solution of ammonium persulfate (AD-485 manufactured by Meltex Co., Ltd.) to remove it by etching to ensure insulation between wirings (FIG. 3 (i)). Finally, a dry film type solder resist 109 (CFP-1121 manufactured by Sumitomo Bakelite Co., Ltd.) was formed on the circuit surface while the circuit was embedded by a vacuum laminator (FIG. 3 (j)).
【0024】(実施例2)内層導体回路102をサブト
ラクティブ工法にて製作した際のエッチング用フォトレ
ジストの剥離を図4に示したような処理工程からなる2
段階剥離機で行った以外は、実施例1と同様に基板を製
作した。(Embodiment 2) The peeling of the etching photoresist when the inner layer conductor circuit 102 is manufactured by the subtractive method comprises the processing steps as shown in FIG.
A substrate was prepared in the same manner as in Example 1 except that the step-separator was used.
【0025】(実施例3)2段階剥離機の2段階目にジ
メチルスルフォキシド系のアルカリ性溶剤(JSR
(株)製THB−S1)を用いた以外は実施例1と同様
に基板を製作した。Example 3 A dimethylsulfoxide-based alkaline solvent (JSR) was used in the second stage of the two-stage peeling machine.
A substrate was manufactured in the same manner as in Example 1 except that THB-S1 manufactured by Co., Ltd. was used.
【0026】(実施例4)図4に示したような処理工程
からなる2段階剥離機の2段目に、超音波発生装置(C
REST社製、4G−500−6T)を設置し、2段階
目の浸漬処理中において超音波を周波数40kHZ,出
力200Wの条件で、印加しながら行った以外は実施例
1と同様に基板を製作した。(Embodiment 4) An ultrasonic wave generator (C) is provided in the second stage of the two-stage peeling machine having the treatment steps shown in FIG.
A 4G-500-6T manufactured by REST Co., Ltd. was installed, and a substrate was manufactured in the same manner as in Example 1 except that ultrasonic waves were applied during the second stage immersion treatment under the conditions of a frequency of 40 kHz and an output of 200 W. did.
【0027】(比較例1)剥離方式を従来の1段階剥離
とし、水酸化ナトリウム水溶液を用いた以外は実施例1
と同様に基板を製作した。(Comparative Example 1) Example 1 was repeated except that the conventional peeling method was one-step peeling and an aqueous sodium hydroxide solution was used.
A substrate was manufactured in the same manner as in.
【0028】(比較例2)剥離方式を従来の1段階剥離
とし、過マンガン酸カリウムと水酸化ナトリウムを主成
分とする水溶液を用いた以外は実施例1と同様に基板を
製作した。Comparative Example 2 A substrate was manufactured in the same manner as in Example 1 except that the conventional peeling method was one-step peeling and the aqueous solution containing potassium permanganate and sodium hydroxide as main components was used.
【0029】(比較例3)剥離方式を従来の1段階剥離
とし、ジメチルスルフォキシド系のアルカリ性溶剤を用
いた以外は実施例1と同様に基板を製作した。Comparative Example 3 A substrate was manufactured in the same manner as in Example 1 except that the conventional one-step peeling method was used and a dimethylsulfoxide-based alkaline solvent was used.
【0030】以下、評価項目、方法、結果について詳細
に説明する。
剥離残渣観察
上記で得られた各基板のビルドアップ層の回路間を走査
型電子顕微鏡にて観察した。残渣の有無を表1にまとめ
た。
2.剥離工程に要する時間測定
1.において剥離残渣が発生しなくなる最小時間を測定
し、表1にまとめた。
3.絶縁抵抗試験
上記で得られた各基板の初期絶縁抵抗を測定した後、8
5℃/相対湿度85%の雰囲気で、直流電圧5.5Vを
印加し、1000時間経過後の絶縁抵抗を測定した。測
定時の印加電圧は100Vで1分とし、初期絶縁抵抗お
よび処理後絶縁抵抗をまとめて表1にした。The evaluation items, methods and results will be described in detail below. Observation of peeling residue The space between the circuits of the build-up layer of each substrate obtained above was observed with a scanning electron microscope. The presence or absence of residues is summarized in Table 1. 2. Measurement of time required for peeling process 1. The minimum time at which no peeling residue was generated was measured in Table 1 and summarized in Table 1. 3. Insulation resistance test After measuring the initial insulation resistance of each substrate obtained above,
A DC voltage of 5.5 V was applied in an atmosphere of 5 ° C./85% relative humidity, and the insulation resistance after 1000 hours was measured. The applied voltage at the time of measurement was 100 V for 1 minute, and the initial insulation resistance and the post-treatment insulation resistance are summarized in Table 1.
【0031】[0031]
【表1】 [Table 1]
【0032】表1に示した評価結果から分かるように、
本発明のプリント配線板の製造方法により製造されたプ
リント配線板は、フォトレジストの剥離残渣が発生せ
ず、かつ短時間で剥離処理を行うことができる。また、
剥離残渣が発生しないため、配線間の銅マイグレーショ
ンによる絶縁信頼性の低下も認められなかった。一方、
比較例で製造した各基板は、フォトレジストの剥離残渣
が発生するか、フォトレジストを完全に除去するために
長時間を要した。剥離残渣が発生した場合は絶縁信頼性
試験において配線間の絶縁不良が認められた。以上のよ
うに、本発明のプリント配線板の製造方法によると、比
較的短時間でフォトレジストを完全に除去でき、配線間
の絶縁信頼性の高い基板を得ることができた。As can be seen from the evaluation results shown in Table 1,
The printed wiring board manufactured by the method for manufacturing a printed wiring board of the present invention can be subjected to a peeling treatment in a short time without generation of a photoresist peeling residue. Also,
Since no peeling residue was generated, no decrease in insulation reliability due to copper migration between wirings was observed. on the other hand,
In each of the substrates manufactured in Comparative Example, a peeling residue of the photoresist was generated or it took a long time to completely remove the photoresist. When a peeling residue was generated, insulation failure between wirings was confirmed in the insulation reliability test. As described above, according to the method for manufacturing a printed wiring board of the present invention, the photoresist can be completely removed in a relatively short time, and a substrate having high insulation reliability between wirings can be obtained.
【0033】[0033]
【発明の効果】本発明によれば、生産性の高い処理方法
で、フォトレジスト剥離残渣が発生せず、高い製造歩留
まりで高品質、高密度プリント配線板の製造方法を提供
することができる。According to the present invention, it is possible to provide a method for producing a high-quality, high-density printed wiring board with a high production yield, which does not generate a photoresist peeling residue, by a highly productive processing method.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明のプリント配線板の製造方法の実施例を
示す断面図である。FIG. 1 is a cross-sectional view showing an embodiment of a method for manufacturing a printed wiring board according to the present invention.
【図2】本発明のプリント配線板の製造方法の実施例を
示す断面図である(図1の続き)。FIG. 2 is a cross-sectional view showing an embodiment of the method for manufacturing a printed wiring board of the present invention (sequel to FIG. 1).
【図3】本発明のプリント配線板の製造方法の実施例を
示す断面図である(図2の続き)。FIG. 3 is a cross-sectional view showing an embodiment of the method for manufacturing a printed wiring board of the present invention (sequel to FIG. 2).
【図4】本発明のプリント配線板の製造方法で用いた二
段階剥離機の処理フロー図である。FIG. 4 is a process flow diagram of a two-step peeling machine used in the method for manufacturing a printed wiring board of the present invention.
101 両面銅張り積層板 102 内層導体回路 103 絶縁樹脂層 104 ブラインド・ヴィアホール 105 給電層 106 紫外線感光性ドライフィルム 107 めっきレジスト 108 銅配線 109 ソルダーレジスト 101 Double-sided copper-clad laminate 102 Inner layer conductor circuit 103 Insulating resin layer 104 Blind Via Hall 105 power supply layer 106 UV-sensitive dry film 107 Plating resist 108 copper wiring 109 Solder resist
Claims (5)
金板表面にフォトレジスト層を形成し、露光、現像後に
エッチングにより形成されてなるプリント配線板におい
て、フォトレジスト層の除去が、膨潤剥離工程とレジス
ト残渣除去工程とからなる薬液処理工程により行われる
ことを特徴とするプリント配線板の製造方法。1. A printed wiring board in which a wiring is formed by forming a photoresist layer on the surface of a resin-coated copper foil or a resin-coated copper alloy plate, and then etching and then exposing, developing, and removing the photoresist layer causes swelling. A method of manufacturing a printed wiring board, which is performed in a chemical treatment process including a peeling process and a resist residue removing process.
表面上にフォトレジスト層を形成し、露光、現像後に電
解メッキにより形成されてなるプリント配線板におい
て、フォトレジスト層の除去が、膨潤剥離工程とレジス
ト残渣除去工程とからなる薬液処理工程により行われる
ことを特徴とするプリント配線板の製造方法。2. In a printed wiring board in which a wiring is formed by forming a photoresist layer on the surface of a conductive frame or a power feeding layer and then performing electroplating after exposure and development, the removal of the photoresist layer includes a swelling and peeling step. And a resist residue removing step, which is performed in a chemical treatment step.
行われ、レジスト残渣除去工程が、酸化樹脂エッチング
剤もしくは有機溶剤により行われる、請求項1、又は2
に記載のプリント配線板の製造方法。3. The swelling and peeling step is performed with an alkaline aqueous solution, and the resist residue removing step is performed with an oxide resin etching agent or an organic solvent.
A method for manufacturing a printed wiring board according to.
て、還元剤による処理が行われる、請求項3記載のプリ
ント配線板の製造方法。4. The method for manufacturing a printed wiring board according to claim 3, wherein the treatment with the oxidizing resin etching agent is followed by the treatment with the reducing agent.
して行われる請求項1〜4のいずれかに記載のプリント
配線板の製造方法。5. The method for manufacturing a printed wiring board according to claim 1, wherein the resist residue removing step is performed by applying ultrasonic waves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003020081A JP2003298205A (en) | 2002-02-04 | 2003-01-29 | Manufacturing method of printed wiring board |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027430 | 2002-02-04 | ||
| JP2002-27430 | 2002-02-04 | ||
| JP2003020081A JP2003298205A (en) | 2002-02-04 | 2003-01-29 | Manufacturing method of printed wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003298205A true JP2003298205A (en) | 2003-10-17 |
Family
ID=29404816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003020081A Pending JP2003298205A (en) | 2002-02-04 | 2003-01-29 | Manufacturing method of printed wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003298205A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008305895A (en) * | 2007-06-06 | 2008-12-18 | Sumitomo Metal Mining Package Materials Co Ltd | Manufacturing method of semiconductor mounting substrate |
| JP2010232407A (en) * | 2009-03-27 | 2010-10-14 | Toppan Printing Co Ltd | Printed wiring board and manufacturing method thereof |
| JP2011114294A (en) * | 2009-11-30 | 2011-06-09 | Toppan Printing Co Ltd | Method of manufacturing build-up wiring board |
| CN114980573A (en) * | 2021-02-25 | 2022-08-30 | 深南电路股份有限公司 | Manufacturing method of circuit board, circuit board and electronic device |
-
2003
- 2003-01-29 JP JP2003020081A patent/JP2003298205A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008305895A (en) * | 2007-06-06 | 2008-12-18 | Sumitomo Metal Mining Package Materials Co Ltd | Manufacturing method of semiconductor mounting substrate |
| JP2010232407A (en) * | 2009-03-27 | 2010-10-14 | Toppan Printing Co Ltd | Printed wiring board and manufacturing method thereof |
| JP2011114294A (en) * | 2009-11-30 | 2011-06-09 | Toppan Printing Co Ltd | Method of manufacturing build-up wiring board |
| CN114980573A (en) * | 2021-02-25 | 2022-08-30 | 深南电路股份有限公司 | Manufacturing method of circuit board, circuit board and electronic device |
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