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WO2019186881A1 - Circuit intégré monolithique hyperfréquence et amplificateur haute fréquence - Google Patents

Circuit intégré monolithique hyperfréquence et amplificateur haute fréquence Download PDF

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Publication number
WO2019186881A1
WO2019186881A1 PCT/JP2018/013197 JP2018013197W WO2019186881A1 WO 2019186881 A1 WO2019186881 A1 WO 2019186881A1 JP 2018013197 W JP2018013197 W JP 2018013197W WO 2019186881 A1 WO2019186881 A1 WO 2019186881A1
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Prior art keywords
matching
mim
transmission line
connection terminal
integrated circuit
Prior art date
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Ceased
Application number
PCT/JP2018/013197
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English (en)
Japanese (ja)
Inventor
貴雄 春名
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
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Priority to JP2018541245A priority Critical patent/JPWO2019186881A1/ja
Priority to PCT/JP2018/013197 priority patent/WO2019186881A1/fr
Publication of WO2019186881A1 publication Critical patent/WO2019186881A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators

Definitions

  • the present application relates to a monolithic microwave integrated circuit constituting a matching circuit of a high-frequency amplifier.
  • a high frequency amplifier used in a communication device of microwave band, millimeter wave band, for example, several GHz to several hundred GHz for mobile communication, satellite communication, etc. amplifies an input high frequency with a transistor and outputs it to a transmission line Configured.
  • a matching circuit is provided for impedance matching with the transmission line.
  • These transistors and matching circuits are often configured as monolithic integrated circuits when the frequency is high. In this field, this integrated circuit is referred to as a monolithic microwave integrated circuit (MMIC). (For example, see Patent Documents 1-3)
  • an amplification part in which a transistor is mounted and a matching circuit part in which a matching circuit is mounted may be configured by separate MMICs.
  • gain matching and impedance matching to the power added efficiency (PAE) point of the power amplifier fundamentals PAE
  • PAE power added efficiency
  • a distributed constant such as a transmission line
  • MIM Metal (Insulator Metal)
  • a connecting member such as a ribbon or a wire in order to connect the MMICs. In that case, since power supply to the transistor is configured to be performed from the output side, a power supply terminal for power supply is often provided in the MMIC including the matching circuit.
  • JP 2013-118329 A Japanese Patent Laid-Open No. 2005-311852 JP 2000-196379 A
  • the conventional high frequency power amplifier mounted with a plurality of MMICs is configured as described above, an inductance such as a ribbon or a wire is inserted at a connection point between the MMICs. For this reason, in a low impedance part such as the vicinity of a transistor, impedance variation is large with respect to changes in circuit constants, and the difficulty of impedance matching to the optimum gain load and optimum PAE load is high.
  • An object of the present invention is to provide an MMIC capable of easily designing a high-output power amplifier.
  • a monolithic microwave integrated circuit disclosed in the present application includes a high-frequency connection terminal to be connected from a transistor that amplifies a high frequency, and a high-frequency power transmission line that extends from the high-frequency connection terminal and outputs the amplified high frequency to the outside
  • a monolithic microwave integrated circuit mounted with a matching circuit a matching connection terminal for connection from a transistor, provided separately from the high-frequency connection terminal, and a matching extending from the matching connection terminal
  • a matching transmission line and a matching MIM, the matching transmission line being arranged so as to run parallel to the surface electrode of the matching MIM with a gap therebetween, and the surface electrode of the matching MIM and the matching transmission line, It is provided with a connection electrode for connection in a part of the parallel running.
  • the monolithic microwave integrated circuit disclosed in the present application it is possible to realize a monolithic microwave integrated circuit in which impedance matching is easy and a high-efficiency, high-output high-frequency power amplifier can be easily designed.
  • FIG. 1 is a plan view showing a configuration of a high-frequency amplifier including an MMIC according to Embodiment 1.
  • FIG. 2A, 2B, and 2C are diagrams for explaining a method of connecting the matching connection terminal and the matching MIM in the MMIC according to the first embodiment. It is a figure which shows the impedance locus for demonstrating the effect
  • FIG. 6 is a plan view showing a configuration of an MMIC according to a second embodiment.
  • FIGS. 5A, 5B, and 5C are diagrams for explaining how to connect the matching connection terminal and the matching MIM in the MMIC according to the second embodiment.
  • FIG. 9 is a plan view showing a configuration of an MMIC according to a third embodiment.
  • FIG. 10 is a plan view showing a configuration of an MMIC according to a fourth embodiment.
  • 8A and 8B are diagrams showing impedance trajectories for explaining the effect of the MMIC according to the fourth embodiment.
  • FIG. 10 is a plan view showing a configuration of an MMIC according to a fifth embodiment.
  • FIG. 10 is a plan view showing a configuration of a high-frequency amplifier including an MMIC according to a sixth embodiment.
  • FIG. 10 is a plan view showing a configuration of an MMIC according to a seventh embodiment.
  • FIG. 10 is a plan view showing a configuration of an MMIC according to an eighth embodiment.
  • FIG. 1 is a plan view showing a configuration of a high-frequency amplifier including a monolithic microwave integrated circuit (MMIC) 1 according to the first embodiment.
  • the MMIC 1 is an MMIC mounted with a matching circuit for outputting the high frequency from the amplification block MMIC 2 on which a transistor for amplifying the high frequency is mounted.
  • MMIC1 may be referred to as matching block MMIC1 in distinction from amplification block MMIC2.
  • a transistor 200 such as an FET or HEMT having drain D, source S, and gate G electrodes is mounted.
  • the matching block MMIC1 has a high frequency as a terminal (PAD) connected to the drain D of the transistor 200 mounted on the amplification block MMIC2 (also referred to as an output electrode, including transistors other than FETs or HEMTs).
  • a connection terminal 4 and a first matching connection terminal 11 are provided.
  • the drain D and the high frequency connection terminal 4 are connected by a connection wire 110, and the drain D and the first matching connection terminal 11 are connected by a connection wire 111.
  • a high frequency power transmission line 40 extends from the high frequency connection terminal 4, and a high frequency is transmitted from the high frequency power transmission line 40 to the high frequency output terminal 10 via the high frequency output MIM 20.
  • MIM Metal Insulator Metal
  • MIM Metal Insulator Metal
  • a power supply circuit 41 for supplying power from the power supply terminal 43 to the transistor is connected at a connection point 44.
  • the power feeding circuit 41 prevents the high frequency from leaking to the power feeding terminal 43 by setting the impedance at the frequency f 0 of the high frequency fundamental wave viewed from the connection point 44 to be open.
  • the impedance can be set to an open value by setting the line length to an odd multiple of 1/4 of the wavelength ⁇ 0 of the fundamental wave. Note that the open value does not need to be strictly open, the influence of high-frequency leakage from the power supply terminal 43 to the outside is small, and the influence of the impedance on the first matching connection terminal 11 side from the connection point 44 is small. Any value is acceptable.
  • This impedance value is referred to as a value that is substantially open.
  • a first matching connection terminal 11 is provided separately from the high frequency connection terminal 4.
  • a first matching transmission line 31 extends from the first matching connection terminal 11.
  • a first matching MIM 21 is disposed along the first matching transmission line 31.
  • the first matching MIM 21 is a capacitor composed of a front electrode 211 and a back electrode 212 with an insulator interposed therebetween.
  • the first matching transmission line 31 is arranged so as to run parallel to the surface electrode 211 of the first matching MIM 21 with a space therebetween, and the surface electrode 211 of the first matching MIM 21 and the first matching transmission line 31 are In a part of the parallel running, the connection electrodes 311 are connected.
  • a member in which “S” is described is a member having the same potential as the source S of the transistor 200 mounted on the amplification block MMIC2.
  • the electrical connection between the front side and the back side is connected through a through hole such as a via hole.
  • connection electrode 311 can be freely installed at a position where the first matching transmission line 31 runs alongside the first matching MIM 21.
  • the impedance viewed from the first matching connection terminal 11 or from the drain end of the transistor 200 connected to the first matching connection terminal 11 via the connection wire 111. Can be set to a desired value.
  • FIG. 3 is a diagram showing a locus of impedance due to a frequency change in the fundamental band with a relative bandwidth of 20%.
  • the trajectory indicated by A is the trajectory set as the design value
  • the trajectory indicated by B is the trajectory when the transmission line length is 100 ⁇ m longer than the design value
  • the trajectory indicated by C is the transmission line length relative to the design value. The trajectories when the length is shortened by 100 ⁇ m are respectively shown.
  • ⁇ when the transmission line length changes by ⁇ 100 ⁇ m to +100 ⁇ m with respect to the design value, ⁇ changes in the range of 0.65 to 0.85.
  • is desirable with respect to the target ⁇ , although it depends on the characteristics of the transistor.
  • the distance from the transistor to the connection terminal of the matching circuit is, for example, There is a possibility that it differs depending on the type of the amplification block MMIC.
  • a common matching block MMIC is used for different types of amplification blocks MMIC, for example, it is necessary to adjust the impedance by the length of the wire connecting between them, which is very complicated.
  • the position of the connection electrode 311 is determined by using one type of MMIC 1 shown in FIG. 1 as the matching block MMIC for each type of the amplification block MMIC.
  • the first matching transmission line 31 extending from the first matching connection terminal 11 provided separately from the high frequency connection terminal 4 and the first matching MIM 21.
  • the first matching transmission line 31 is disposed so as to run parallel to the surface electrode 211 of the first matching MIM 21 with a space therebetween, and the first matching transmission line 31 and the first matching transmission line 31 31 is connected in a part of the parallel running, the impedance matching to the optimum gain of the power amplifier and the optimum load of the PAE becomes easy, and the design of the low power consumption power amplifier is facilitated.
  • FIG. FIG. 4 is a plan view showing the configuration of the MMIC according to the second embodiment.
  • the basic configuration is the same as that of the MMIC according to the first embodiment shown in FIG. 1, but the first matching transmission line 31 is provided so as to surround the front electrode 211.
  • FIGS. 5A, 5B, and 5C show the first matching transmission line 31 and the first matching MIM 21 in order to show various connection methods between the first matching transmission line 31 and the first matching MIM 21. It is explanatory drawing which takes out a part and shows in figure.
  • the connection electrode 321 can be freely installed at a position where the first matching transmission line 31 and the front electrode 211 of the first matching MIM 21 run side by side. According to the MMIC of the second embodiment, the range in which impedance matching can be performed is wider than that of the MMIC of the first embodiment.
  • the first matching transmission line 31 is installed so as to surround the surface electrode 211 of the first matching MIM 21, the electricity between the first matching MIM 21 and the layout outside the first matching transmission line 31 is provided. Therefore, the circuit loss can be reduced and a power amplifier with low power consumption can be provided. It should be noted that by providing the first matching transmission line 31 so as to surround more than half of the periphery of the surface electrode of the first matching MIM 21, it is possible to cut off the electrical influence on the layout outside the first matching transmission line 31. A certain effect can be obtained.
  • the MMIC of the second embodiment impedance matching with the optimum gain of the power amplifier and the optimum load of the PAE is facilitated, and the first matching MIM 21 and the first matching transmission line 31 Therefore, it is possible to easily design a power amplifier with low power consumption.
  • FIG. FIG. 6 is a plan view showing the configuration of the MMIC according to the third embodiment.
  • a high frequency power transmission line 40 extends from the high frequency connection terminal 4, and a high frequency is transmitted from the high frequency power transmission line 40 to the high frequency output terminal 10 via the high frequency output MIM 20.
  • a first matching connection terminal 11 is provided in addition to the high frequency connection terminal 4, a first matching connection terminal 11 is provided.
  • a first matching transmission line 31 extends from the first matching connection terminal 11.
  • a first matching MIM 21 is disposed along the first matching transmission line 31.
  • the first matching transmission line 31 is arranged so as to run parallel to the surface electrode 211 of the first matching MIM 21 with a space therebetween, and the surface electrode 211 of the first matching MIM 21 and the first matching transmission line 31 are In a part of the parallel running, the connection electrodes 311 are connected.
  • a feeding circuit 42 is further provided at the tip of the first matching transmission line 31.
  • the feeder circuit 42 is constituted by a transmission line, and the front end of the transmission line is connected to the back electrode 212 of the first matching MIM 21 and also connected to the back electrode 252 of the termination MIM 25.
  • a power supply terminal 43 is also connected to the back electrode 252 of the termination MIM 25.
  • the transmission line constituting the power feeding circuit 42 is set to a length at which the impedance at the frequency f 0 of the fundamental wave is substantially open from the connection point 310 of the connection electrode 311.
  • the surface electrode 251 of the termination MIM 25 is connected to the transistor so as to have the same potential as the source of the transistor mounted on the amplification block MMIC.
  • the termination MIM 25 has a function of a decoupling capacitor and terminates a high frequency having a frequency lower than the fundamental frequency f 0 .
  • FIG. 7 is a plan view showing the configuration of the MMIC according to the fourth embodiment.
  • a high frequency power transmission line 40 extends from the high frequency connection terminal 4, and a high frequency is transmitted from the high frequency power transmission line 40 to the high frequency output terminal 10 via the high frequency output MIM 20.
  • a power supply circuit 41 for supplying power from the power supply terminal 43 to the transistor is connected at a connection point 44.
  • the power feeding circuit 41 is set so that the impedance of the high frequency fundamental wave viewed from the connection point 44 is substantially open so that the high frequency does not leak to the power feeding terminal 43.
  • a first matching connection terminal 11 is provided separately from the high frequency connection terminal 4.
  • a first matching transmission line 31 extends from the first matching connection terminal 11.
  • a first matching MIM 21 is disposed along the first matching transmission line 31.
  • the first matching transmission line 31 is arranged so as to run parallel to the surface electrode 211 of the first matching MIM 21 with a space therebetween, and the surface electrode 211 of the first matching MIM 21 and the first matching transmission line 31 are A part of the parallel running is connected by a connection electrode 311.
  • the second matching MIM 22 composed of the front electrode 221 and the back electrode 222 sandwiching an insulator between the first matching transmission line 31 along the first matching transmission line 31 is used for the first matching.
  • the first matching transmission line 31 is arranged so as to run parallel to the surface electrode 221 of the second matching MIM 22 with a space therebetween, and the surface electrode 221 of the second matching MIM 22 and the first matching transmission line 31 are A part of the parallel running is connected by a connection electrode 312.
  • the second matching MIM 22 may be arranged at a position closer to the first matching connection terminal 11 than the first matching MIM 21.
  • the second matching MIM 22 arranged at a position closer to the first matching connection terminal 11 than the first matching MIM 21 has a smaller dimension than the first matching MIM 21 and has a capacitance value. Is a capacitor smaller than the first matching MIM 21.
  • the harmonic impedance of the fundamental wave is adjusted by disposing the MIM having a smaller capacitance value than the first matching MIM 21 at a position closer to the first matching connection terminal 11 than the first matching MIM 21. It becomes possible to do.
  • 8A and 8B show examples of changes in the load impedance at the drain end of the transistor due to the addition of the second matching MIM 22. It can be seen that by adding the second matching MIM 22, the phase of the impedance at the frequency of the second harmonic of the fundamental wave can be moved to around 0 degrees.
  • the MIM having a size smaller than that of the first matching MIM 21, that is, a capacitance value smaller than that of the first matching MIM 21 is disposed at a position closer to the first matching connection terminal 11 than the position where the first matching MIM 21 is disposed.
  • the impedance of the harmonic can be adjusted, and the load impedance suitable for the switching operation of the transistor can be obtained, so that a high-frequency amplifier with lower power consumption can be realized.
  • FIG. FIG. 9 is a plan view showing the configuration of the MMIC according to the fifth embodiment.
  • the second matching MIM 22 including the front electrode 221 and the back electrode 222 having an insulator interposed therebetween, the second matching connection terminal 12, and the second matching in the configuration of FIG. A transmission line 32 is added.
  • the second matching MIM 22 is disposed along the second matching transmission line 32 extending from the second matching connection terminal 12 provided separately from the high frequency connection terminal 4 and the first matching connection terminal 11. .
  • the second matching transmission line 32 is arranged so as to run parallel to the surface electrode 221 of the second matching MIM 22, and the second matching transmission line 32 and the surface electrode 221 of the second matching MIM 22
  • the two matching transmission lines 32 are connected by connection electrodes 322 at a part of the parallel running transmission line 32.
  • the second matching MIM 22 connected to the second matching transmission line 32 has the harmonic impedance.
  • the first matching MIM 21 that adjusts the fundamental wave impedance and the second matching MIM 22 that adjusts the harmonic impedance are connected to the first matching transmission line 31.
  • the second matching MIM 22 that adjusts the impedance of the harmonics is connected to the second matching transmission line 32 that is different from the first matching transmission line 31. did. For this reason, the impedance adjustment of the fundamental wave and the impedance adjustment of the harmonic can be performed on separate transmission lines, the degree of freedom in circuit design is improved, and a high-frequency amplifier with lower power consumption can be designed.
  • FIG. 10 is a plan view showing a configuration of a high-frequency amplifier including the matching block MMIC 1 according to the sixth embodiment.
  • the high-frequency connection terminal 4 the first matching connection terminal 11, and the second matching connection terminal 12 are used as terminals for connection to the drain D of the transistor 200.
  • the second matching transmission extending from the second matching connection terminal 12 arranged at a position far from the high frequency connection terminal 4 which is a connection terminal of the high frequency power transmission line 40 for outputting a high frequency.
  • a first matching MIM 21 for adjusting the impedance of the fundamental wave is connected to the line 32.
  • the first matching transmission line 31 extending from the first matching connection terminal 11 disposed closer to the high frequency connection terminal 4 than the second matching connection terminal 12 has a second impedance adjustment for harmonic impedance.
  • a matching MIM 22 is connected.
  • the length of the connection wire for connecting to the drain D of the amplification block MMIC2 in relation to the arrangement with the amplification block MMIC2 May result in a terminal with an increased length.
  • the connection wire 112 that connects the second matching connection terminal 12 and the drain D of the transistor is longer than the connection wire 110 and the connection wire 111. Therefore, the MIM connected to the second matching transmission line 32 extending from the second matching connection terminal 12 is the first matching MIM 21 for adjusting the impedance of the fundamental wave, and can be connected with a shorter connection wire 111.
  • the MIM connected to the first matching connection terminal 11 is the second matching MIM 22 for adjusting the impedance of, for example, the second harmonic, which is a higher frequency than the fundamental wave.
  • the first matching is compared with the arrangement of the fifth embodiment.
  • the lengths of the transmission line 31 and the second matching transmission line 32 can be shortened, and the layout can be further reduced.
  • FIG. FIG. 11 is a plan view showing the configuration of the MMIC according to the seventh embodiment.
  • the second matching MIM 22 for adjusting the impedance of the harmonics is additionally provided in the configuration of FIG. 6 of the third embodiment at the position where the first matching transmission line 31 runs side by side. It is a configuration.
  • the power feeding circuit 42 is connected to the back electrode 252 of the termination MIM 25 that has a function of terminating a high frequency having a frequency equal to or lower than the fundamental wave, and the front electrode 251 of the termination MIM 25 has the same potential as the source potential of the transistor. Since the back electrode 222 of the matching MIM 22 is also set to the source potential, these electrodes are configured to be connected. In this manner, the layout can be further reduced by sharing electrodes having the same potential.
  • FIG. 12 is a plan view showing the configuration of the MMIC according to the eighth embodiment.
  • the second matching connection terminal 12 the second matching transmission line 32 extending from the second matching connection terminal 12
  • a third matching MIM 23 composed of a front electrode 231 and a back electrode 232, which are arranged so that the two matching transmission lines 32 run side by side and sandwich an insulator therebetween, is added.
  • the third matching MIM 23 is used for adjusting the impedance of the second harmonic
  • the second matching MIM 22 is used for the impedance of the higher order higher harmonics such as the third harmonic or the fourth harmonic. Provided for adjustment.
  • the power supply connection terminal 43 is provided at the tip of the first matching transmission line 31, and power is supplied from the first matching transmission line 31 to the transistor.
  • a transmission line in which the impedance of the fundamental wave is substantially open is provided at the tip of the second matching transmission line 32, and a feeding connection terminal is provided at the tip of the transmission line. It can also be configured to supply power to the transistor via the connection terminal 12.
  • the degree of freedom in circuit design is improved and the degree of freedom in element arrangement is increased. It is possible to realize a configuration capable of adjusting the impedance of not only the second harmonic but also higher harmonics with a smaller size.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

L'invention concerne un circuit intégré monolithique hyperfréquence sur lequel est monté un circuit d'adaptation qui comprend : une borne de connexion haute fréquence (4) à connecter à partir d'un transistor qui amplifie une haute fréquence ; et une ligne de transmission de puissance haute fréquence (40) pour délivrer en sortie une haute fréquence à l'extérieur. Le circuit intégré monolithique hyperfréquence comprend, séparément de la borne de connexion haute fréquence, une borne de connexion d'adaptation (11) à connecter à partir du transistor, une ligne de transmission d'adaptation (31) s'étendant à partir de la borne de connexion d'adaptation (11) et un MIM d'adaptation (21). La ligne de transmission d'adaptation (31) est agencée de manière à être espacée et en parallèle avec une électrode avant (211) du MIM d'adaptation (21) et la ligne de transmission d'adaptation (31) est pourvue d'une électrode de connexion (311) qui connecte l'électrode avant (211) du MIM d'adaptation (21) à la ligne de transmission d'adaptation (31) dans une portion d'une partie agencée parallèlement.
PCT/JP2018/013197 2018-03-29 2018-03-29 Circuit intégré monolithique hyperfréquence et amplificateur haute fréquence Ceased WO2019186881A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018541245A JPWO2019186881A1 (ja) 2018-03-29 2018-03-29 モノリシックマイクロ波集積回路の製造方法
PCT/JP2018/013197 WO2019186881A1 (fr) 2018-03-29 2018-03-29 Circuit intégré monolithique hyperfréquence et amplificateur haute fréquence

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PCT/JP2018/013197 WO2019186881A1 (fr) 2018-03-29 2018-03-29 Circuit intégré monolithique hyperfréquence et amplificateur haute fréquence

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457502A (ja) * 1990-06-27 1992-02-25 Matsushita Electric Ind Co Ltd 高周波トランジスタの整合回路
JPH07240645A (ja) * 1994-03-01 1995-09-12 Fujitsu Ltd マイクロ波集積回路
JPH11127045A (ja) * 1997-10-22 1999-05-11 Kyocera Corp 高周波用電力増幅器
JP2000106510A (ja) * 1998-09-28 2000-04-11 Mitsubishi Electric Corp 高周波電力増幅器
JP2009141411A (ja) * 2007-12-03 2009-06-25 Mitsubishi Electric Corp 電力増幅器
US9130511B2 (en) * 2010-10-20 2015-09-08 Nanyang Technological University Power amplifier and linearization techniques using active and passive devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3761729B2 (ja) * 1998-12-25 2006-03-29 株式会社ルネサステクノロジ バイアス回路

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457502A (ja) * 1990-06-27 1992-02-25 Matsushita Electric Ind Co Ltd 高周波トランジスタの整合回路
JPH07240645A (ja) * 1994-03-01 1995-09-12 Fujitsu Ltd マイクロ波集積回路
JPH11127045A (ja) * 1997-10-22 1999-05-11 Kyocera Corp 高周波用電力増幅器
JP2000106510A (ja) * 1998-09-28 2000-04-11 Mitsubishi Electric Corp 高周波電力増幅器
JP2009141411A (ja) * 2007-12-03 2009-06-25 Mitsubishi Electric Corp 電力増幅器
US9130511B2 (en) * 2010-10-20 2015-09-08 Nanyang Technological University Power amplifier and linearization techniques using active and passive devices

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