WO2019186881A1 - Monolithic microwave integrated circuit and high frequency amplifier - Google Patents

Abstract

Provided is a monolithic microwave integrated circuit having mounted thereon a matching circuit that comprises: a high frequency connection terminal (4) for being connected from a transistor that amplifies high frequency; and a high frequency power transmission line (40) for outputting high frequency to the outside. The monolithic microwave integrated circuit comprising, separately from the high frequency connection terminal, a matching connection terminal (11) for being connected from the transistor, a matching transmission line (31) extending from the matching connection terminal (11), and a matching MIM (21). The matching transmission line (31) are arranged so as to be spaced apart from and in parallel with a front electrode (211) of the matching MIM (21), and the matching transmission line (31) is provided with a connection electrode (311) that connects the front electrode (211) of the matching MIM (21) with the matching transmission line (31) in a portion of a parallelly-arranged part.

Description

Monolithic microwave integrated circuit and high frequency amplifier

The present application relates to a monolithic microwave integrated circuit constituting a matching circuit of a high-frequency amplifier.

A high frequency amplifier used in a communication device of microwave band, millimeter wave band, for example, several GHz to several hundred GHz for mobile communication, satellite communication, etc., amplifies an input high frequency with a transistor and outputs it to a transmission line Configured. On the output side, a matching circuit is provided for impedance matching with the transmission line. These transistors and matching circuits are often configured as monolithic integrated circuits when the frequency is high. In this field, this integrated circuit is referred to as a monolithic microwave integrated circuit (MMIC). (For example, see Patent Documents 1-3)

As an MMIC, an amplification part in which a transistor is mounted and a matching circuit part in which a matching circuit is mounted may be configured by separate MMICs. In power amplifiers with multiple MMICs, such as MMICs with transistors and MMICs that mainly form matching circuits, gain matching and impedance matching to the power added efficiency (PAE) point of the power amplifier fundamentals It is also necessary to design the impedance of harmonics. In a power amplifier (for example, see Non-Patent Documents 1-4) in which a plurality of MMICs are mounted such as an MMIC in which a transistor is provided on GaN and an MMIC in which a matching circuit is provided on GaAs, a distributed constant such as a transmission line, MIM ( It uses a lumped constant such as a capacitor called Metal (Insulator Metal) to improve the degree of freedom and miniaturize the circuit. Further, it is necessary to use a connecting member such as a ribbon or a wire in order to connect the MMICs. In that case, since power supply to the transistor is configured to be performed from the output side, a power supply terminal for power supply is often provided in the MMIC including the matching circuit.

JP 2013-118329 A Japanese Patent Laid-Open No. 2005-311852 JP 2000-196379 A

Diane Bouw, et al., "High Performance Plastic Packaged 100W L-band Quasi-MMIC HPA" Proceedings of the 46th European Microwave Conference, 3-4 Oct 2016, pp1453-1456 Davide Resca, et al., "A Miniature 70W quasi-MMIC PA Block suitable for High Integrated X-band Pulsed SSPA Schemes", Proceedings of the 11th European Microwave Integrated Circuits Conference, 3-4 Oct 2016 C. Berrached, et al., "Wideband High Efficiency High Power GaN Amplifiers Using MIC and Quasi-MMIC Technologies", Proceedings of the 43rd European Microwave Conference, 7-10 Oct 2013, pp1395-1398 Marc Camiade, et al., "HighlyIntegrated S and C-band Internally-Matched Quasi-MMIC Power Gan Devices", Proceedings of the 42nd European Microwave Conference, 29 Oct-Nov 2012, pp1023-1026

Since the conventional high frequency power amplifier mounted with a plurality of MMICs is configured as described above, an inductance such as a ribbon or a wire is inserted at a connection point between the MMICs. For this reason, in a low impedance part such as the vicinity of a transistor, impedance variation is large with respect to changes in circuit constants, and the difficulty of impedance matching to the optimum gain load and optimum PAE load is high.

This application discloses a technique for solving the above-mentioned problems, and by devising the layout on the MMIC, the difficulty of impedance matching to the optimum gain load and optimum PAE load is reduced, and high efficiency is achieved. An object of the present invention is to provide an MMIC capable of easily designing a high-output power amplifier.

A monolithic microwave integrated circuit disclosed in the present application includes a high-frequency connection terminal to be connected from a transistor that amplifies a high frequency, and a high-frequency power transmission line that extends from the high-frequency connection terminal and outputs the amplified high frequency to the outside In a monolithic microwave integrated circuit mounted with a matching circuit, a matching connection terminal for connection from a transistor, provided separately from the high-frequency connection terminal, and a matching extending from the matching connection terminal A matching transmission line and a matching MIM, the matching transmission line being arranged so as to run parallel to the surface electrode of the matching MIM with a gap therebetween, and the surface electrode of the matching MIM and the matching transmission line, It is provided with a connection electrode for connection in a part of the parallel running.

According to the monolithic microwave integrated circuit disclosed in the present application, it is possible to realize a monolithic microwave integrated circuit in which impedance matching is easy and a high-efficiency, high-output high-frequency power amplifier can be easily designed.

1 is a plan view showing a configuration of a high-frequency amplifier including an MMIC according to Embodiment 1. FIG. 2A, 2B, and 2C are diagrams for explaining a method of connecting the matching connection terminal and the matching MIM in the MMIC according to the first embodiment. It is a figure which shows the impedance locus for demonstrating the effect | action of MMIC by Embodiment 1. FIG. 6 is a plan view showing a configuration of an MMIC according to a second embodiment. FIG. FIGS. 5A, 5B, and 5C are diagrams for explaining how to connect the matching connection terminal and the matching MIM in the MMIC according to the second embodiment. FIG. 9 is a plan view showing a configuration of an MMIC according to a third embodiment. FIG. 10 is a plan view showing a configuration of an MMIC according to a fourth embodiment. 8A and 8B are diagrams showing impedance trajectories for explaining the effect of the MMIC according to the fourth embodiment. FIG. 10 is a plan view showing a configuration of an MMIC according to a fifth embodiment. FIG. 10 is a plan view showing a configuration of a high-frequency amplifier including an MMIC according to a sixth embodiment. FIG. 10 is a plan view showing a configuration of an MMIC according to a seventh embodiment. FIG. 10 is a plan view showing a configuration of an MMIC according to an eighth embodiment.

Embodiment 1 FIG.
FIG. 1 is a plan view showing a configuration of a high-frequency amplifier including a monolithic microwave integrated circuit (MMIC) 1 according to the first embodiment. The MMIC 1 is an MMIC mounted with a matching circuit for outputting the high frequency from the amplification block MMIC 2 on which a transistor for amplifying the high frequency is mounted. In order to avoid confusion, MMIC1 may be referred to as matching block MMIC1 in distinction from amplification block MMIC2. In the amplification block MMIC2, for example, a transistor 200 such as an FET or HEMT having drain D, source S, and gate G electrodes is mounted. The matching block MMIC1 has a high frequency as a terminal (PAD) connected to the drain D of the transistor 200 mounted on the amplification block MMIC2 (also referred to as an output electrode, including transistors other than FETs or HEMTs). A connection terminal 4 and a first matching connection terminal 11 are provided. The drain D and the high frequency connection terminal 4 are connected by a connection wire 110, and the drain D and the first matching connection terminal 11 are connected by a connection wire 111.

In the MMIC 1, a high frequency power transmission line 40 extends from the high frequency connection terminal 4, and a high frequency is transmitted from the high frequency power transmission line 40 to the high frequency output terminal 10 via the high frequency output MIM 20. MIM (Metal Insulator Metal) is a capacitor composed of a front electrode and a back electrode with an insulator interposed therebetween. In the middle of the high-frequency power transmission line 40, a power supply circuit 41 for supplying power from the power supply terminal 43 to the transistor is connected at a connection point 44. The power feeding circuit 41 prevents the high frequency from leaking to the power feeding terminal 43 by setting the impedance at the frequency f ₀ of the high frequency fundamental wave viewed from the connection point 44 to be open. For example, when the feeder circuit 41 is configured by a transmission line, the impedance can be set to an open value by setting the line length to an odd multiple of 1/4 of the wavelength λ ₀ of the fundamental wave. Note that the open value does not need to be strictly open, the influence of high-frequency leakage from the power supply terminal 43 to the outside is small, and the influence of the impedance on the first matching connection terminal 11 side from the connection point 44 is small. Any value is acceptable. This impedance value is referred to as a value that is substantially open.

Further, a first matching connection terminal 11 is provided separately from the high frequency connection terminal 4. A first matching transmission line 31 extends from the first matching connection terminal 11. A first matching MIM 21 is disposed along the first matching transmission line 31. The first matching MIM 21 is a capacitor composed of a front electrode 211 and a back electrode 212 with an insulator interposed therebetween. The first matching transmission line 31 is arranged so as to run parallel to the surface electrode 211 of the first matching MIM 21 with a space therebetween, and the surface electrode 211 of the first matching MIM 21 and the first matching transmission line 31 are In a part of the parallel running, the connection electrodes 311 are connected.

In the figure of the present application, like the back electrode 212 of the first matching MIM 21, members provided on the back side of the MMIC 1 instead of the front side are indicated by hatching. Further, a member in which “S” is described is a member having the same potential as the source S of the transistor 200 mounted on the amplification block MMIC2. The electrical connection between the front side and the back side is connected through a through hole such as a via hole.

2A, FIG. 2B, and FIG. 2C show the first matching transmission line 31 and the first matching MIM 21 in order to show various connection methods between the first matching transmission line 31 and the first matching MIM 21. It is explanatory drawing which takes out a part and shows in figure. As shown in FIGS. 2A, 2B, and 2C, the connection electrode 311 can be freely installed at a position where the first matching transmission line 31 runs alongside the first matching MIM 21. By selecting the position of the connection electrode 311, the impedance viewed from the first matching connection terminal 11 or from the drain end of the transistor 200 connected to the first matching connection terminal 11 via the connection wire 111. Can be set to a desired value.

In the configuration in which the wire from the transistor 200 is connected to the first matching connection terminal 11, how much the impedance seen from the drain end of the transistor 200 changes when the length of the first matching transmission line 31 changes. Is shown in FIG. FIG. 3 is a diagram showing a locus of impedance due to a frequency change in the fundamental band with a relative bandwidth of 20%. The trajectory indicated by A is the trajectory set as the design value, the trajectory indicated by B is the trajectory when the transmission line length is 100 μm longer than the design value, and the trajectory indicated by C is the transmission line length relative to the design value. The trajectories when the length is shortened by 100 μm are respectively shown. In this example, when the transmission line length changes by −100 μm to +100 μm with respect to the design value, Γ changes in the range of 0.65 to 0.85. In the design of the power amplifier, the variation ΔΓ <| 0.05 | is desirable with respect to the target Γ, although it depends on the characteristics of the transistor.

When the amplification block MMIC2 on which the transistor 200 is mounted and the matching block MMIC1 on which the matching circuit is mounted as shown in FIG. 1 are configured as separate MMICs, the distance from the transistor to the connection terminal of the matching circuit is, for example, There is a possibility that it differs depending on the type of the amplification block MMIC. When a common matching block MMIC is used for different types of amplification blocks MMIC, for example, it is necessary to adjust the impedance by the length of the wire connecting between them, which is very complicated. By using the MMIC having the configuration shown in FIG. 1, the position of the connection electrode 311 is determined by using one type of MMIC 1 shown in FIG. 1 as the matching block MMIC for each type of the amplification block MMIC. It becomes easy to satisfy the variation ΔΓ <| 0.05 | with respect to the block MMIC. In this manner, impedance matching of the power amplifier to the optimum gain load and PAE optimum load is facilitated, and the design of a power amplifier with low power consumption is facilitated.

As described above, according to the MMIC 1 according to the first embodiment, the first matching transmission line 31 extending from the first matching connection terminal 11 provided separately from the high frequency connection terminal 4 and the first matching MIM 21. The first matching transmission line 31 is disposed so as to run parallel to the surface electrode 211 of the first matching MIM 21 with a space therebetween, and the first matching transmission line 31 and the first matching transmission line 31 31 is connected in a part of the parallel running, the impedance matching to the optimum gain of the power amplifier and the optimum load of the PAE becomes easy, and the design of the low power consumption power amplifier is facilitated. Become.

Embodiment 2. FIG.
FIG. 4 is a plan view showing the configuration of the MMIC according to the second embodiment. The basic configuration is the same as that of the MMIC according to the first embodiment shown in FIG. 1, but the first matching transmission line 31 is provided so as to surround the front electrode 211.

FIGS. 5A, 5B, and 5C show the first matching transmission line 31 and the first matching MIM 21 in order to show various connection methods between the first matching transmission line 31 and the first matching MIM 21. It is explanatory drawing which takes out a part and shows in figure. As shown in FIGS. 5A to 5C, the connection electrode 321 can be freely installed at a position where the first matching transmission line 31 and the front electrode 211 of the first matching MIM 21 run side by side. According to the MMIC of the second embodiment, the range in which impedance matching can be performed is wider than that of the MMIC of the first embodiment. In addition, since the first matching transmission line 31 is installed so as to surround the surface electrode 211 of the first matching MIM 21, the electricity between the first matching MIM 21 and the layout outside the first matching transmission line 31 is provided. Therefore, the circuit loss can be reduced and a power amplifier with low power consumption can be provided. It should be noted that by providing the first matching transmission line 31 so as to surround more than half of the periphery of the surface electrode of the first matching MIM 21, it is possible to cut off the electrical influence on the layout outside the first matching transmission line 31. A certain effect can be obtained.

As described above, according to the MMIC of the second embodiment, impedance matching with the optimum gain of the power amplifier and the optimum load of the PAE is facilitated, and the first matching MIM 21 and the first matching transmission line 31 Therefore, it is possible to easily design a power amplifier with low power consumption.

Embodiment 3 FIG.
FIG. 6 is a plan view showing the configuration of the MMIC according to the third embodiment. A high frequency power transmission line 40 extends from the high frequency connection terminal 4, and a high frequency is transmitted from the high frequency power transmission line 40 to the high frequency output terminal 10 via the high frequency output MIM 20. In addition to the high frequency connection terminal 4, a first matching connection terminal 11 is provided. A first matching transmission line 31 extends from the first matching connection terminal 11. A first matching MIM 21 is disposed along the first matching transmission line 31. The first matching transmission line 31 is arranged so as to run parallel to the surface electrode 211 of the first matching MIM 21 with a space therebetween, and the surface electrode 211 of the first matching MIM 21 and the first matching transmission line 31 are In a part of the parallel running, the connection electrodes 311 are connected.

A feeding circuit 42 is further provided at the tip of the first matching transmission line 31. The feeder circuit 42 is constituted by a transmission line, and the front end of the transmission line is connected to the back electrode 212 of the first matching MIM 21 and also connected to the back electrode 252 of the termination MIM 25. A power supply terminal 43 is also connected to the back electrode 252 of the termination MIM 25. The transmission line constituting the power feeding circuit 42 is set to a length at which the impedance at the frequency f ₀ of the fundamental wave is substantially open from the connection point 310 of the connection electrode 311. The surface electrode 251 of the termination MIM 25 is connected to the transistor so as to have the same potential as the source of the transistor mounted on the amplification block MMIC. The termination MIM 25 has a function of a decoupling capacitor and terminates a high frequency having a frequency lower than the fundamental frequency f ₀ . With this configuration, power can be supplied from the power supply terminal 43 to the transistor through the power supply circuit 42 and the first matching transmission line 31. Therefore, it is not necessary to provide a power feeding circuit in the high frequency power transmission line 40, and circuit loss can be reduced.

Embodiment 4 FIG.
FIG. 7 is a plan view showing the configuration of the MMIC according to the fourth embodiment. A high frequency power transmission line 40 extends from the high frequency connection terminal 4, and a high frequency is transmitted from the high frequency power transmission line 40 to the high frequency output terminal 10 via the high frequency output MIM 20. In the middle of the high-frequency power transmission line 40, a power supply circuit 41 for supplying power from the power supply terminal 43 to the transistor is connected at a connection point 44. The power feeding circuit 41 is set so that the impedance of the high frequency fundamental wave viewed from the connection point 44 is substantially open so that the high frequency does not leak to the power feeding terminal 43.

Further, a first matching connection terminal 11 is provided separately from the high frequency connection terminal 4. A first matching transmission line 31 extends from the first matching connection terminal 11. A first matching MIM 21 is disposed along the first matching transmission line 31. The first matching transmission line 31 is arranged so as to run parallel to the surface electrode 211 of the first matching MIM 21 with a space therebetween, and the surface electrode 211 of the first matching MIM 21 and the first matching transmission line 31 are A part of the parallel running is connected by a connection electrode 311. In the fourth embodiment, the second matching MIM 22 composed of the front electrode 221 and the back electrode 222 sandwiching an insulator between the first matching transmission line 31 along the first matching transmission line 31 is used for the first matching. It is arranged at a position closer to the first matching connection terminal 11 than the MIM 21. The first matching transmission line 31 is arranged so as to run parallel to the surface electrode 221 of the second matching MIM 22 with a space therebetween, and the surface electrode 221 of the second matching MIM 22 and the first matching transmission line 31 are A part of the parallel running is connected by a connection electrode 312. Not only the second matching MIM 22 but also another MIM may be arranged at a position closer to the first matching connection terminal 11 than the first matching MIM 21. However, the second matching MIM 22 arranged at a position closer to the first matching connection terminal 11 than the first matching MIM 21 has a smaller dimension than the first matching MIM 21 and has a capacitance value. Is a capacitor smaller than the first matching MIM 21.

As described above, the harmonic impedance of the fundamental wave is adjusted by disposing the MIM having a smaller capacitance value than the first matching MIM 21 at a position closer to the first matching connection terminal 11 than the first matching MIM 21. It becomes possible to do.

8A and 8B show examples of changes in the load impedance at the drain end of the transistor due to the addition of the second matching MIM 22. It can be seen that by adding the second matching MIM 22, the phase of the impedance at the frequency of the second harmonic of the fundamental wave can be moved to around 0 degrees.

As described above, the MIM having a size smaller than that of the first matching MIM 21, that is, a capacitance value smaller than that of the first matching MIM 21 is disposed at a position closer to the first matching connection terminal 11 than the position where the first matching MIM 21 is disposed. Thus, the impedance of the harmonic can be adjusted, and the load impedance suitable for the switching operation of the transistor can be obtained, so that a high-frequency amplifier with lower power consumption can be realized.

Embodiment 5 FIG.
FIG. 9 is a plan view showing the configuration of the MMIC according to the fifth embodiment. In the fifth embodiment, the second matching MIM 22 including the front electrode 221 and the back electrode 222 having an insulator interposed therebetween, the second matching connection terminal 12, and the second matching in the configuration of FIG. A transmission line 32 is added. The second matching MIM 22 is disposed along the second matching transmission line 32 extending from the second matching connection terminal 12 provided separately from the high frequency connection terminal 4 and the first matching connection terminal 11. . Similar to the first matching transmission line 31, the second matching transmission line 32 is arranged so as to run parallel to the surface electrode 221 of the second matching MIM 22, and the second matching transmission line 32 and the surface electrode 221 of the second matching MIM 22 The two matching transmission lines 32 are connected by connection electrodes 322 at a part of the parallel running transmission line 32.

Similar to the second matching MIM 22 connected to the first matching transmission line 31 of the fourth embodiment and FIG. 7, the second matching MIM 22 connected to the second matching transmission line 32 has the harmonic impedance. Provided to adjust. In the configuration of the fourth embodiment, the first matching MIM 21 that adjusts the fundamental wave impedance and the second matching MIM 22 that adjusts the harmonic impedance are connected to the first matching transmission line 31. . On the other hand, in the fifth embodiment, the second matching MIM 22 that adjusts the impedance of the harmonics is connected to the second matching transmission line 32 that is different from the first matching transmission line 31. did. For this reason, the impedance adjustment of the fundamental wave and the impedance adjustment of the harmonic can be performed on separate transmission lines, the degree of freedom in circuit design is improved, and a high-frequency amplifier with lower power consumption can be designed.

Embodiment 6 FIG.
FIG. 10 is a plan view showing a configuration of a high-frequency amplifier including the matching block MMIC 1 according to the sixth embodiment. Also in the sixth embodiment, as in the fifth embodiment, the high-frequency connection terminal 4, the first matching connection terminal 11, and the second matching connection terminal 12 are used as terminals for connection to the drain D of the transistor 200. Provided. In the sixth embodiment, the second matching transmission extending from the second matching connection terminal 12 arranged at a position far from the high frequency connection terminal 4 which is a connection terminal of the high frequency power transmission line 40 for outputting a high frequency. A first matching MIM 21 for adjusting the impedance of the fundamental wave is connected to the line 32. The first matching transmission line 31 extending from the first matching connection terminal 11 disposed closer to the high frequency connection terminal 4 than the second matching connection terminal 12 has a second impedance adjustment for harmonic impedance. A matching MIM 22 is connected.

When a plurality of connection terminals are provided in the matching block MMIC1 to connect to the drain D of the transistor 200, the length of the connection wire for connecting to the drain D of the amplification block MMIC2 in relation to the arrangement with the amplification block MMIC2 May result in a terminal with an increased length. In the arrangement of FIG. 10, the connection wire 112 that connects the second matching connection terminal 12 and the drain D of the transistor is longer than the connection wire 110 and the connection wire 111. Therefore, the MIM connected to the second matching transmission line 32 extending from the second matching connection terminal 12 is the first matching MIM 21 for adjusting the impedance of the fundamental wave, and can be connected with a shorter connection wire 111. The MIM connected to the first matching connection terminal 11 is the second matching MIM 22 for adjusting the impedance of, for example, the second harmonic, which is a higher frequency than the fundamental wave.

By arranging the first matching MIM 21 for adjusting the impedance of the fundamental wave and the second matching MIM 22 for adjusting the impedance of the harmonic as described above, the first matching is compared with the arrangement of the fifth embodiment. The lengths of the transmission line 31 and the second matching transmission line 32 can be shortened, and the layout can be further reduced.

Embodiment 7 FIG.
FIG. 11 is a plan view showing the configuration of the MMIC according to the seventh embodiment. In the MMIC according to the seventh embodiment, the second matching MIM 22 for adjusting the impedance of the harmonics is additionally provided in the configuration of FIG. 6 of the third embodiment at the position where the first matching transmission line 31 runs side by side. It is a configuration. For example, the power feeding circuit 42 is connected to the back electrode 252 of the termination MIM 25 that has a function of terminating a high frequency having a frequency equal to or lower than the fundamental wave, and the front electrode 251 of the termination MIM 25 has the same potential as the source potential of the transistor. Since the back electrode 222 of the matching MIM 22 is also set to the source potential, these electrodes are configured to be connected. In this manner, the layout can be further reduced by sharing electrodes having the same potential.

Embodiment 8 FIG.
FIG. 12 is a plan view showing the configuration of the MMIC according to the eighth embodiment. In the MMIC according to the eighth embodiment, the second matching connection terminal 12, the second matching transmission line 32 extending from the second matching connection terminal 12, A third matching MIM 23 composed of a front electrode 231 and a back electrode 232, which are arranged so that the two matching transmission lines 32 run side by side and sandwich an insulator therebetween, is added. In this configuration, for example, the third matching MIM 23 is used for adjusting the impedance of the second harmonic, and the second matching MIM 22 is used for the impedance of the higher order higher harmonics such as the third harmonic or the fourth harmonic. Provided for adjustment.

12, the power supply connection terminal 43 is provided at the tip of the first matching transmission line 31, and power is supplied from the first matching transmission line 31 to the transistor. However, a transmission line in which the impedance of the fundamental wave is substantially open is provided at the tip of the second matching transmission line 32, and a feeding connection terminal is provided at the tip of the transmission line. It can also be configured to supply power to the transistor via the connection terminal 12.

According to the MMIC according to the eighth embodiment, since the first matching connection terminal 11 and the second matching connection terminal 12 are provided, the degree of freedom in circuit design is improved and the degree of freedom in element arrangement is increased. It is possible to realize a configuration capable of adjusting the impedance of not only the second harmonic but also higher harmonics with a smaller size.

Although various exemplary embodiments and examples are described in this application, various features, aspects, and functions described in one or more embodiments are not specific to a particular embodiment. The present invention is not limited to the application, and can be applied to the embodiments alone or in various combinations. Accordingly, countless variations that are not illustrated are envisaged within the scope of the technology disclosed herein. For example, the case where at least one component is deformed, the case where the component is added or omitted, the case where the at least one component is extracted and combined with the component of another embodiment are included.

1 MMIC, 2 amplification block MMIC, 4 high frequency connection terminal, 40 high frequency power transmission line, 11 first matching connection terminal, 12 second matching connection terminal, 21 first matching MIM, 22 second matching MIM, 23 Third matching MIM, 211, 221, 231 Front electrode, 212, 222, 232 Back electrode, 31 First matching transmission line, 32 Second matching transmission line, 311, 312, 321, 322 Connection electrode, 200 transistors

Claims (10)

A matching circuit including a high-frequency connection terminal for connection from a transistor for amplifying a high frequency and a high-frequency power transmission line extending from the high-frequency connection terminal and outputting the amplified high frequency to the outside is mounted. In monolithic microwave integrated circuits,
A matching connection terminal provided separately from the high-frequency connection terminal and connected from the transistor; a matching transmission line extending from the matching connection terminal; and a matching MIM. The transmission line is arranged so as to run parallel to the surface electrode of the matching MIM at an interval, and connects the surface electrode of the matching MIM and the matching transmission line in a part of the parallel running. A monolithic microwave integrated circuit comprising a connection electrode. The monolithic microwave integrated circuit according to claim 1, wherein the matching transmission line is provided so as to surround more than half of the periphery of the surface electrode of the matching MIM. The monolithic microwave integrated circuit according to claim 1, wherein a plurality of matching MIMs are provided. Among the plurality of matching MIMs, one matching MIM is a fundamental matching MIM that adjusts the impedance of a high frequency fundamental wave, and the other matching MIMs are more than the fundamental matching MIM. 4. The monolithic microwave integrated circuit according to claim 3, wherein the monolithic microwave integrated circuit is a MIM having a small capacitance value. A plurality of matching connection terminals are provided, a matching transmission line extends from each matching connection terminal, and at least one matching MIM is connected to each matching transmission line. The monolithic microwave integrated circuit according to any one of claims 1 to 4. The monolithic microwave according to any one of claims 1 to 5, wherein the matching MIM is arranged so that a plurality of the matching MIMs are connected to one matching transmission line. Integrated circuit. Among the plurality of matching MIMs arranged on one matching transmission line, the capacitance value of the matching MIM arranged at a position close to the matching connection terminal is a position far from the matching connection terminal. The monolithic microwave integrated circuit according to claim 6, wherein the monolithic microwave integrated circuit is smaller than a capacitance value of the matching MIM disposed on the substrate. A feeding circuit for supplying power to the transistor is further connected to a side of the matching transmission line opposite to the matching connection terminal from a position where the matching MIM is connected. The monolithic microwave integrated circuit according to any one of claims 1 to 7. 9. The power feeding circuit is configured by a transmission line, and impedance at a frequency of a high frequency fundamental wave of the power feeding circuit at a position where the matching MIM is connected is substantially open. A monolithic microwave integrated circuit according to 1. A monolithic microwave integrated circuit according to any one of claims 1 to 9, and a monolithic microwave integrated circuit of an amplification block on which a transistor for amplifying a high frequency is mounted, the high frequency connection terminal and the matching connection Each of the terminals is connected to the output electrode of the transistor.

Images