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WO2019186681A1 - Dispositif de traitement de substrat et procédé de fabrication de dispositif à semi-conducteur - Google Patents

Dispositif de traitement de substrat et procédé de fabrication de dispositif à semi-conducteur Download PDF

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Publication number
WO2019186681A1
WO2019186681A1 PCT/JP2018/012337 JP2018012337W WO2019186681A1 WO 2019186681 A1 WO2019186681 A1 WO 2019186681A1 JP 2018012337 W JP2018012337 W JP 2018012337W WO 2019186681 A1 WO2019186681 A1 WO 2019186681A1
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WO
WIPO (PCT)
Prior art keywords
tube
reaction tube
substrate processing
processing apparatus
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/012337
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English (en)
Japanese (ja)
Inventor
優作 岡嶋
周平 西堂
吉田　秀成
隆史 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP2020510225A priority Critical patent/JP6918211B2/ja
Priority to PCT/JP2018/012337 priority patent/WO2019186681A1/fr
Publication of WO2019186681A1 publication Critical patent/WO2019186681A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H10P72/0441—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H10P14/60—
    • H10P32/00—
    • H10P72/0402—
    • H10P72/0432—

Definitions

  • the present invention relates to a furnace port portion structure of a substrate processing apparatus, and more particularly, to a heat resistance countermeasure technique for the furnace port portion.
  • a reaction tube has a boat as a substrate holding member for holding wafers, that is, substrates in multiple stages, and the substrate is processed in a processing chamber in the reaction tube while holding the plurality of substrates. It is known that there is something to do.
  • a plurality of substrates are vertically arranged and held by a substrate holding member and are carried into a processing chamber. Thereafter, a processing gas is introduced into the processing chamber while the substrate is heated by a superheater such as a heater installed outside the processing chamber, and a thin film forming process or the like is performed on the substrate.
  • Patent Document 1 such a substrate processing apparatus is formed of opaque quartz for reducing the influence of heat from the substrate, the substrate holding member, and the heating device and preventing the seal member such as an O-ring from being burned out.
  • a structure has been proposed in which the cylindrical heat shield ring is disposed obliquely above the O-ring.
  • a reaction tube fixing ring is used when connecting to a furnace port part.
  • the reaction tube fixing ring is provided with a flow path of cooling water, and the reaction tube and the furnace port part are connected to each other. It performs the cooling function for the O-ring part installed in between.
  • the diameter of the exhaust pipe of the reaction tube is increased for the purpose of improving the exhaust efficiency in the reaction tube, the flange on the bottom surface and the exhaust pipe are close to each other, and the reaction tube fixing ring may not be provided below the exhaust pipe. is there. In this case, the cooling function of the O-ring below the exhaust pipe is lowered, and it becomes necessary to limit the temperature. It is difficult to provide a cylindrical shielding ring as described in Patent Document 1 even below the exhaust pipe.
  • An object of the present invention is to solve the above-described problems and to provide a configuration capable of suppressing the temperature rise of the O-ring portion below the exhaust pipe even when the diameter of the exhaust pipe is widened.
  • a substrate holder for arranging and holding a plurality of substrates, a cylindrical inner tube having an opening through which a substrate holder can be taken in and out, and an upper end that is closed to the outer periphery of the lower end
  • a reaction tube having a cylindrical outer tube provided with a flange and configured to surround the inner tube; a furnace body that surrounds the top and sides of the reaction tube; a heater that heats the inside of the furnace body; and a flange, A mating member connected via a seal member, a heat insulating structure disposed between the substrate holder and the mating member, and a gas supply mechanism for supplying gas to a plurality of substrates held in the reaction tube
  • the reaction tube is provided near the flange in a position facing the exhaust pipe along the outer surface of the inner pipe, and an exhaust pipe that fluidly communicates the space between the inner pipe and the outer pipe with the outside of the outer pipe.
  • a configuration having a diffuser plate provided is provided.
  • FIG. 1 It is a figure which shows one structural example of the vertical heat processing apparatus with which this invention is applied. It is a schematic diagram for demonstrating the subject of the substrate processing apparatus of this invention. It is a figure which shows the principal part of the substrate processing apparatus based on Example 1. FIG. It is a figure which shows the principal part of the substrate processing apparatus based on Example 2. FIG.
  • the substrate processing apparatus 1 is configured as a vertical heat treatment apparatus that performs a heat treatment process in the manufacture of a semiconductor integrated circuit, and includes a processing furnace 2.
  • the processing furnace 2 has a heater 3 in order to heat it uniformly.
  • the heater 3 has a cylindrical shape and is installed perpendicular to the installation floor of the substrate processing apparatus 1 by being supported by a heater base as a holding plate.
  • the heater 3 also functions as an activation mechanism that excites the gas with heat.
  • the reaction tube 4 constituting a reaction vessel is disposed inside the heater 3, a reaction tube 4 constituting a reaction vessel is disposed.
  • the reaction tube 4 is made of a heat-resistant material such as quartz (SiO 2) or silicon carbide (SiC), and has a cylindrical shape with the upper end closed and the lower end opened.
  • the reaction tube 4 has a double-pipe structure having an outer tube 4A and an inner tube 4B that are coupled to each other at a flange 4C at the lower end. The upper ends of the outer tube 4A and the inner tube 4B are closed, and the lower end of the inner tube 4B is open.
  • the flange 4C has a larger outer diameter than the outer tube 4A and protrudes outward.
  • An exhaust port 4D communicating with the inside of the outer tube 4A is provided near the lower end of the reaction tube 4, and the entire reaction tube 4 is integrally formed of a single material such as quartz.
  • the double structure including the outer tube 4A and the inner tube 4B is not limited to an integral structure in which both are coupled to each other, and may be a separable structure.
  • the manifold 5 has a cylindrical or truncated cone shape, is made of metal or quartz, and is provided to support the lower end of the reaction tube 4.
  • the inner diameter of the manifold 5 is formed larger than the inner diameter of the reaction tube 4, that is, the inner diameter of the flange 4C.
  • an annular space is formed between the flange 4 ⁇ / b> C at the lower end of the reaction tube 4 and the seal cap 19. This space or its surrounding members are collectively referred to as the furnace opening.
  • the inner pipe 4B has a main exhaust port 4E that communicates the inside and the outside on the side of the reaction tube at the back side of the exhaust port 4D, and a supply slit 4F at a position opposite to the main exhaust port 4E.
  • the main exhaust port 4E is a single vertically long opening that opens to a region where the wafer 7 is disposed.
  • the supply slits 4 ⁇ / b> F are slits extending in the circumferential direction, and a plurality of supply slits 4 ⁇ / b> F are provided in the vertical direction so as to correspond to the respective wafers 7.
  • one or more nozzles 8 for supplying a processing gas such as a raw material gas are provided in correspondence with the position of the supply slit 4F. It has been.
  • a gas supply pipe 9 for supplying a processing gas is connected to the nozzle 8 through the manifold 5.
  • the inner pipe 4B is further provided with a plurality of sub exhaust ports 4G that allow the processing chamber 6 and the exhaust space S to communicate with each other at a position farther behind the reaction tube 4 than the exhaust port 4D and more open than the main exhaust port 4E. It is done.
  • the flange 4C is also formed with a plurality of bottom exhaust ports 4H and the like for communicating the processing chamber 6 and the lower end of the exhaust space S. In other words, the lower end of the exhaust space S is closed by the flange 4C except for the bottom exhaust port 4H and the like.
  • the sub exhaust port 4G and the bottom exhaust port 4H mainly function to exhaust a shaft purge gas described later.
  • a mass flow controller (MFC) 10 that is a flow rate controller and a valve 11 that is an on-off valve are provided on the flow path of the gas supply pipe 9 in order from the upstream direction.
  • a gas supply pipe 12 that supplies an inert gas is connected to the gas supply pipe 9 on the downstream side of the valve 11.
  • the gas supply pipe 12 is provided with an MFC 13 and a valve 14 in order from the upstream direction.
  • a processing gas supply unit that is a processing gas supply system is mainly configured by the gas supply pipe 9, the MFC 10, and the valve 11. As described above, the substrate processing apparatus shown in FIG. 1 uses the gas supply mechanism including the nozzle 8, the gas supply pipes 9 and 12, the MFCs 10 and 13, the valves 11 and 14, and the like.
  • the substrate processing is performed by sequentially repeating the fourth step to be supplied to the substrate.
  • the nozzle 8 is provided in the gas supply space 4 so as to rise from the lower part of the reaction tube 4.
  • One or a plurality of nozzle holes 8H for supplying gas are provided on the side surface and upper end of the nozzle 8.
  • the plurality of nozzle holes 8H correspond to the respective openings of the supply slit 4F, and are opened so as to face the center of the reaction tube 4, so that gas can be injected toward the wafer 7 through the inner tube 4B. it can.
  • An exhaust pipe 15 that exhausts the atmosphere in the processing chamber 6 is connected to the exhaust port 4D.
  • a vacuum pump 18 as a vacuum exhaust device is connected to the exhaust pipe 15 via a pressure sensor 16 as a pressure detector for detecting the pressure in the processing chamber 6 and an APC (Auto Pressure Controller) valve 17 as a pressure adjusting unit. It is connected.
  • the APC valve 17 can perform evacuation in the processing chamber 6 and stop evacuation by opening and closing the valve while the vacuum pump 18 is operated. Further, the pressure in the processing chamber 6 can be adjusted by adjusting the valve opening degree based on the pressure information detected by the pressure sensor 16 in a state where the vacuum pump 18 is operated. .
  • a seal cap 19 is provided as a furnace port lid that can airtightly close the lower end opening of the manifold 5.
  • the seal cap 19 is made of, for example, a metal such as stainless steel or a nickel-based alloy, and is formed in a disk shape.
  • An O-ring 19 ⁇ / b> A is provided on the upper surface of the seal cap 19 as a seal member that comes into contact with the lower end of the manifold 5.
  • the O-ring as the seal member can be installed on the upper surface of the manifold 5 so as to contact the lower end of the flange 4C.
  • a cover plate 20 that protects the seal cap 19 is provided on the upper surface of the seal cap 19 with respect to a portion inside the lower end inner periphery of the manifold 5.
  • the cover plate 20 is made of a heat and corrosion resistant material such as quartz, sapphire, or SiC, and is formed in a disk shape.
  • the boat 21 as a substrate holder supports a plurality of, for example, 25 to 200, wafers 7 in a multi-stage by aligning them vertically in a horizontal posture and with their centers aligned. In this case, the wafers 7 are arranged at regular intervals.
  • the boat 21 is made of a heat resistant material such as quartz or SiC. It may be desirable for the reaction tube 4 to have a minimum inner diameter that allows the boat 21 to be safely carried in and out.
  • a heat insulation assembly 22 is disposed at the bottom of the boat 21.
  • the heat insulation assembly 22 has a structure that reduces heat conduction or transmission in the vertical direction, and usually has a cavity inside. The interior can be purged with a shaft purge gas.
  • a processing region A an upper portion where the boat 21 is disposed
  • a lower portion where the heat insulating assembly 22 is disposed is referred to as a heat insulating region B.
  • Rotating mechanism 23 for rotating boat 21 is installed on the side of seal cap 19 opposite to processing chamber 6.
  • a gas supply pipe 24 for shaft purge gas is connected to the rotation mechanism 23.
  • the gas supply pipe 44c is provided with an MFC 25 and a valve 26 in order from the upstream direction.
  • the boat elevator 27 is provided vertically below the reaction tube 4 and operates as an elevating / lowering mechanism for moving the seal cap 19 up and down. Thereby, the boat 21 and the wafer 7 supported by the seal cap 19 are carried into and out of the processing chamber 6. Note that a shutter that closes the lower end opening of the reaction tube 4 may be provided instead of the seal cap 19 while the seal cap 19 is lowered to the lowest position.
  • a temperature detector 28 is installed on the outer wall of the outer tube 4A.
  • the temperature detector 28 can be configured by a plurality of thermocouples arranged side by side. By adjusting the power supply to the heater 3 based on the temperature information detected by the temperature detector 28, the temperature in the processing chamber 6 becomes a desired temperature distribution.
  • the controller 29 is a computer that controls the entire substrate processing apparatus 1, and includes MFCs 10 and 13, valves 11 and 14, pressure sensor 16, APC valve 17, vacuum pump 18, heater 3, temperature detector 28, rotating mechanism 23, boat It is electrically connected to the elevator 27 and the like, and receives signals from them and controls them.
  • a furnace port that forms an annular space between the reaction tube 4, a flange 4 ⁇ / b> C at the lower end thereof, and a seal cap 19 that is a lid of the furnace port part.
  • a reaction tube fixing ring is used to connect the parts.
  • 2A and 2B schematically show the substrate processing apparatus 1 using the reaction tube fixing ring 29 as a longitudinal sectional view and a transverse sectional view thereof.
  • the O-ring installed between the lower end of the flange and the manifold of the furnace opening portion at this time becomes high temperature.
  • a cooling water flow path (not shown) is provided inside the reaction tube fixing ring 29 to perform a cooling function for the O-ring portion installed between the flange and the manifold.
  • the exhaust port diameter of the reaction tube 4 that is, the diameter of the exhaust tube 15 is increased for the purpose of improving the exhaust efficiency in the reaction tube
  • the seal cap 19 and the exhaust tube 15 are close as shown schematically in FIG.
  • the reaction tube fixing ring 29 cannot be provided up to the bottom of the exhaust pipe 15 at the exhaust port.
  • the cooling function of the O-ring located below the exhaust port, that is, the exhaust pipe 15, is lowered, it is necessary to limit the temperature of heating by the heater.
  • various embodiments of the present invention for solving this problem will be described.
  • a substrate holder for arranging and holding a plurality of substrates, a cylindrical inner tube having an opening through which the substrate holder can be taken in and out, a flange on the outer periphery of the lower end, which is closed at the upper end, are provided.
  • a reaction tube having a cylindrical outer tube configured to surround the inner tube, a furnace body that surrounds the top and sides of the reaction tube, a heater that heats the inside of the furnace body, and a flange through a seal member
  • a mating member connected to each other, a heat insulating structure disposed between the substrate holder and the mating member, and a gas supply mechanism for supplying gas to a plurality of substrates held in the reaction tube.
  • An exhaust pipe that fluidly communicates the space between the inner pipe and the outer pipe with the outside of the outer pipe in the vicinity of the flange, and a scattering plate provided at a position facing the exhaust pipe along the outer surface of the inner pipe It is an Example of the substrate processing apparatus which has.
  • FIG. 3 is a schematic diagram showing a configuration of a main part of the first embodiment.
  • the principal part of the substrate processing apparatus which has the scattering plate 30 provided only in the position which opposes the exhaust pipe 15 along the outer surface of the inner pipe 4B of the reaction tube of a present Example was shown typically.
  • the scattering plate 30 made of a radiation net that scatters radiation (light rays such as infrared rays) is a position substantially facing the exhaust pipe 15 so as to scatter and reflect radiation directly reaching the O-ring 19B below the exhaust pipe. And installed so as to cover the height between the straight line drawn from the upper part of the heater to the O-ring 19B and the straight line drawn from the lower part of the heater to the O-ring. As shown in FIGS.
  • the scattering plate 30 is provided at a position that takes into account the direction of arrival of thermal radiation, but the scattering plate 30 has an opening so as not to block the intermediate exhaust port.
  • 30A is formed. That is, since the inner pipe 4B has a sub exhaust port (intermediate exhaust port) 4G that fluidly communicates the inner side and the outer side of the inner pipe at a position facing the exhaust pipe 15, a newly installed scattering plate 30 is configured to have an opening 30A having the same shape as the sub exhaust port 4G so as not to block the sub exhaust port 4G.
  • quartz that is made opaque by forming a large number of minute cavities and voids that are inner bubbles. This type of opaque quartz remains opaque even when fired. Since the wavelength transmittance varies depending on the size of the void, it is preferable to select a void having an appropriate size according to the temperature of the reactor, 600 to 1000 ° C.
  • the insertion-side hinges 31 are provided at the upper and lower ends of the scattering plate 30 at a total of four locations, a total of four locations, and the outer surface of the reaction tube inner tube 4B. It is inserted from above into a receiving-side hinge 32 corresponding to the above, and fitted and fitted. In FIG. 3, four hinges are used. However, it is desirable to use a minimum of three hinges and design so that there is as little play as possible in consideration of manufacturing intersections.
  • the scattering plate 30 is attached to the inner tube 4B by being hooked with three or more hinges.
  • the back surface of the mounted scattering plate 30, that is, the inner surface to be mounted is installed in a state slightly lifted from the outer surface of the inner tube of the reaction tube.
  • the scattering plate 30 may absorb heat.
  • a reflection plate having a structure in which a metal film is sandwiched between quartz or the like may be used.
  • you may comprise integrally with a reaction tube.
  • a metal film or a dielectric multilayer film including TiO 2 or TaO 3
  • a quartz or other ceramic thick film may be placed thereon to protect it.
  • these plate-like structures having a scattering function are collectively referred to as a scattering plate.
  • a scattering plate that suppresses radiation from the heater is installed at a position facing the exhaust port of the inner tube of the reaction tube without using a cylindrical heat shield ring.
  • a scattering plate that suppresses radiation from the heater is installed at a position facing the exhaust port of the inner tube of the reaction tube without using a cylindrical heat shield ring.
  • a substrate holder for arranging and holding a plurality of substrates, a cylindrical inner tube having an opening through which the substrate holder can be taken in and out, a flange on the outer periphery of the lower end, which is closed at the upper end, are provided.
  • a reaction tube having a cylindrical outer tube configured to surround the inner tube, a furnace body that surrounds the upper and sides of the reaction tube, a heater that heats the inside of the furnace body, and a flange that serves as a sealing member
  • a reaction tube comprising: a mating member connected via the substrate holder; a heat insulating structure disposed between the substrate holder and the mating member; and a gas supply mechanism for supplying gas to the plurality of substrates held by the reaction tube.
  • FIG. 4 is a schematic diagram showing a configuration of a main part of the second embodiment.
  • the exhaust port diameter of the reaction tube 4 that is, the exhaust tube 15 is increased for the purpose of improving the exhaust efficiency in the reaction tube, the seal cap 19 and the exhaust tube 15 become closer, The reaction tube fixing ring 29 cannot be provided under the exhaust port. Therefore, in this embodiment, a structure in which a partial cooling block is cut into the lower portion of the exhaust pipe 15 is adopted.
  • a notch 33 is provided in the built-up portion 34 below the exhaust port of the reaction tube 4 so that there is no problem in strength.
  • the partial cooling block 36 made of a metal such as stainless steel, which extends from the cooling block 35 through which the cooling water can circulate, is configured to partially enter.
  • the installation position of the cooling block 35 corresponds to a portion where the reaction tube fixing ring 29 below the exhaust tube 15 shown in FIG.
  • the exhaust pipe 15 is provided with a built-up portion 34 in order to maintain the strength near the base of the reaction tube 4.
  • the build-up portion 34 is partially connected to the furnace port flange 4C.
  • a portion having no problem in strength that is, a notch 33 is formed obliquely below, and the partial cooling block 36 enters the notch 33. It has a shape.
  • the partial cooling block 36 it is configured to partially cover the upper portion of the O-ring 19B installed on the upper surface of the manifold 5 which is the counterpart member, so that it also has a radiation reflection effect.
  • the reaction tube 15 is provided by the partial cooling block 36 extended into the notch 33 at the lower portion of the exhaust pipe 15.
  • the temperature rise of the O-ring 19B which is a seal member in the lower portion of the exhaust port, can be efficiently suppressed.
  • An elastic member 38 shown in FIG. 3C is an elastic member made of a fluororesin sheet or a heat conductive sheet that closely contacts the partial cooling block 36 and the flange portion of the reaction tube.
  • the heat conductive sheet is obtained by dispersing a high heat conductive filler such as aluminum nitride in a resin.
  • a cooling water channel 37 that goes around inside the manifold 15 below the O-ring 19B installed on the upper surface of the manifold 5 is installed separately from the cooling block 35,
  • the O-ring 19B can also be cooled by the cooling water flowing through.
  • the partial cooling block under the exhaust port of the reaction tube, it is possible to efficiently suppress the temperature rise of the seal member in the lower portion of the exhaust port.
  • this invention is not limited to the above-mentioned Example, Various modifications are included.
  • the above-described embodiments have been described in detail for better understanding of the present invention, and are not necessarily limited to those having all the configurations described.
  • a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment.
  • the reaction tube has been described as a type in which the inner tube and the outer tube are integrated.
  • the present invention is not limited to this, and a separable type reaction tube is provided. Needless to say, the present invention can also be applied to a substrate processing apparatus.
  • deposition such as CVD, PVD, ALD, epitaxial growth, or processing for forming an oxide film or a nitride film on the surface It can be applied to diffusion treatment and etching treatment.

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  • Chemical & Material Sciences (AREA)
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  • Organic Chemistry (AREA)
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Abstract

Selon un mode de réalisation de la présente invention, l'invention concerne un dispositif de traitement de substrat qui peut supprimer une augmentation de la température d'une partie de joint torique au-dessous d'un tube d'échappement, même si le diamètre d'ouverture du tube d'échappement 15 a été élargi. L'invention concerne une configuration comprenant : un tube de réaction comprenant un outil de maintien de substrat pour maintenir une pluralité de substrats, un tube interne cylindrique 4B ayant, sur son côté inférieur, une ouverture à travers laquelle l'outil de maintien de substrat peut sortir et entrer, et un tube externe cylindrique dont l'extrémité supérieure est fermée, pourvu d'une bride dans la périphérie externe de l'extrémité inférieure, et constitué de manière à entourer le tube interne ; un dispositif de chauffage pour chauffer le côté interne d'un corps de four qui entoure le sommet et le côté du tube de réaction ; un élément côté homologue auquel est reliée la bride par l'intermédiaire du joint torique 19B ; et un mécanisme d'alimentation en gaz pour fournir un gaz à la pluralité de substrats maintenus dans le tube de réaction. Le tube de réaction comprend un tube d'échappement 15 à proximité de la bride, établissant une communication fluidique entre l'extérieur du tube externe et l'espace entre le tube interne et le tube externe, et une plaque de diffusion 30 disposée le long de la surface externe du tube interne à une position faisant face au tube d'échappement 15. Note : le dessin sélectionné est la figure 3.
PCT/JP2018/012337 2018-03-27 2018-03-27 Dispositif de traitement de substrat et procédé de fabrication de dispositif à semi-conducteur Ceased WO2019186681A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020510225A JP6918211B2 (ja) 2018-03-27 2018-03-27 基板処理装置及び半導体装置の製造方法
PCT/JP2018/012337 WO2019186681A1 (fr) 2018-03-27 2018-03-27 Dispositif de traitement de substrat et procédé de fabrication de dispositif à semi-conducteur

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PCT/JP2018/012337 WO2019186681A1 (fr) 2018-03-27 2018-03-27 Dispositif de traitement de substrat et procédé de fabrication de dispositif à semi-conducteur

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN114354536A (zh) * 2022-01-12 2022-04-15 苏州泽达兴邦医药科技有限公司 微型近红外探头控温装置以及温度控制方法
JP2022141001A (ja) * 2021-03-15 2022-09-29 東京エレクトロン株式会社 温調ユニット及び処理装置
US12456636B2 (en) 2019-06-27 2025-10-28 Kokusai Electric Corporation Heat insulation structure, substrate processing apparatus, method of manufacturing semiconductor device and substrate processing method

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JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2008199040A (ja) * 2003-10-24 2008-08-28 Tokyo Electron Ltd 縦型熱処理装置
JP2011003689A (ja) * 2009-06-18 2011-01-06 Hitachi Kokusai Electric Inc 基板処理装置
JP2011176178A (ja) * 2010-02-25 2011-09-08 Hitachi Kokusai Electric Inc 熱処理装置および半導体装置の製造方法

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Publication number Priority date Publication date Assignee Title
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2008199040A (ja) * 2003-10-24 2008-08-28 Tokyo Electron Ltd 縦型熱処理装置
JP2011003689A (ja) * 2009-06-18 2011-01-06 Hitachi Kokusai Electric Inc 基板処理装置
JP2011176178A (ja) * 2010-02-25 2011-09-08 Hitachi Kokusai Electric Inc 熱処理装置および半導体装置の製造方法

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US12456636B2 (en) 2019-06-27 2025-10-28 Kokusai Electric Corporation Heat insulation structure, substrate processing apparatus, method of manufacturing semiconductor device and substrate processing method
JP2022141001A (ja) * 2021-03-15 2022-09-29 東京エレクトロン株式会社 温調ユニット及び処理装置
JP7687791B2 (ja) 2021-03-15 2025-06-03 東京エレクトロン株式会社 温調ユニット及び処理装置
CN114354536A (zh) * 2022-01-12 2022-04-15 苏州泽达兴邦医药科技有限公司 微型近红外探头控温装置以及温度控制方法

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