WO2019186681A1 - Substrate processing device and semiconductor device production method - Google Patents

Abstract

In one embodiment of the present invention, a substrate processing device is provided that can suppress a rise in the temperature of an O-ring part below an exhaust tube, even if the opening diameter of the exhaust tube 15 has been widened. Provided is a configuration comprising: a reaction tube comprising a substrate holding tool for holding a plurality of substrates, a cylindrical inner tube 4B having, at a lower side thereof, an opening wherethrough the substrate holding tool can exit and enter, and a cylindrical outer tube whereof the upper end is closed, provided with a flange in the outer periphery of the lower end, and constituted in such a manner as to surround the inner tube; a heater for heating the inner side of an oven body that surrounds the top and the side of the reaction tube; a counterpart-side member whereto the flange is connected via the O-ring 19B; and a gas supply mechanism for supplying a gas to the plurality of substrates held in the reaction tube. The reaction tube comprises an exhaust tube 15 near the flange, establishing fluid communication between the exterior of the outer tube and the space between the inner tube and the outer tube, and a scattering plate 30 provided along the outer surface of the inner tube at a position facing the exhaust tube 15. Note: selected drawing is FIG. 3.

Description

Substrate processing apparatus and semiconductor device manufacturing method

The present invention relates to a furnace port portion structure of a substrate processing apparatus, and more particularly, to a heat resistance countermeasure technique for the furnace port portion.

It is known that there is a semiconductor manufacturing apparatus as an example of a substrate processing apparatus, and there is a vertical apparatus as an example of a semiconductor manufacturing apparatus. As a substrate processing apparatus of this type, a reaction tube has a boat as a substrate holding member for holding wafers, that is, substrates in multiple stages, and the substrate is processed in a processing chamber in the reaction tube while holding the plurality of substrates. It is known that there is something to do. In the vertical apparatus, a plurality of substrates are vertically arranged and held by a substrate holding member and are carried into a processing chamber. Thereafter, a processing gas is introduced into the processing chamber while the substrate is heated by a superheater such as a heater installed outside the processing chamber, and a thin film forming process or the like is performed on the substrate.

In Patent Document 1, such a substrate processing apparatus is formed of opaque quartz for reducing the influence of heat from the substrate, the substrate holding member, and the heating device and preventing the seal member such as an O-ring from being burned out. A structure has been proposed in which the cylindrical heat shield ring is disposed obliquely above the O-ring.

Japanese Patent Application Laid-Open No. 2011-3687

In the reaction tube of the substrate processing apparatus, a reaction tube fixing ring is used when connecting to a furnace port part. The reaction tube fixing ring is provided with a flow path of cooling water, and the reaction tube and the furnace port part are connected to each other. It performs the cooling function for the O-ring part installed in between. However, if the diameter of the exhaust pipe of the reaction tube is increased for the purpose of improving the exhaust efficiency in the reaction tube, the flange on the bottom surface and the exhaust pipe are close to each other, and the reaction tube fixing ring may not be provided below the exhaust pipe. is there. In this case, the cooling function of the O-ring below the exhaust pipe is lowered, and it becomes necessary to limit the temperature. It is difficult to provide a cylindrical shielding ring as described in Patent Document 1 even below the exhaust pipe.

An object of the present invention is to solve the above-described problems and to provide a configuration capable of suppressing the temperature rise of the O-ring portion below the exhaust pipe even when the diameter of the exhaust pipe is widened.

According to one aspect of the present invention, a substrate holder for arranging and holding a plurality of substrates, a cylindrical inner tube having an opening through which a substrate holder can be taken in and out, and an upper end that is closed to the outer periphery of the lower end A reaction tube having a cylindrical outer tube provided with a flange and configured to surround the inner tube; a furnace body that surrounds the top and sides of the reaction tube; a heater that heats the inside of the furnace body; and a flange, A mating member connected via a seal member, a heat insulating structure disposed between the substrate holder and the mating member, and a gas supply mechanism for supplying gas to a plurality of substrates held in the reaction tube, The reaction tube is provided near the flange in a position facing the exhaust pipe along the outer surface of the inner pipe, and an exhaust pipe that fluidly communicates the space between the inner pipe and the outer pipe with the outside of the outer pipe. A configuration having a diffuser plate provided is provided.

By installing a scattering plate that suppresses radiation from the heater, it is possible to efficiently suppress the temperature rise of the quartz reaction tube and the lower part of the exhaust pipe of the seal member arranged under the furnace port.

It is a figure which shows one structural example of the vertical heat processing apparatus with which this invention is applied. It is a schematic diagram for demonstrating the subject of the substrate processing apparatus of this invention. It is a figure which shows the principal part of the substrate processing apparatus based on Example 1. FIG. It is a figure which shows the principal part of the substrate processing apparatus based on Example 2. FIG.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments for carrying out the present invention will be described in order with reference to the drawings. First, as an example of a substrate processing apparatus to which the present invention is applied, a configuration of a vertical heat treatment apparatus and its problems will be described with reference to FIGS. explain.

As shown in FIG. 1, the substrate processing apparatus 1 is configured as a vertical heat treatment apparatus that performs a heat treatment process in the manufacture of a semiconductor integrated circuit, and includes a processing furnace 2. The processing furnace 2 has a heater 3 in order to heat it uniformly. The heater 3 has a cylindrical shape and is installed perpendicular to the installation floor of the substrate processing apparatus 1 by being supported by a heater base as a holding plate. The heater 3 also functions as an activation mechanism that excites the gas with heat.

Inside the heater 3, a reaction tube 4 constituting a reaction vessel is disposed. The reaction tube 4 is made of a heat-resistant material such as quartz (SiO 2) or silicon carbide (SiC), and has a cylindrical shape with the upper end closed and the lower end opened. The reaction tube 4 has a double-pipe structure having an outer tube 4A and an inner tube 4B that are coupled to each other at a flange 4C at the lower end. The upper ends of the outer tube 4A and the inner tube 4B are closed, and the lower end of the inner tube 4B is open. The flange 4C has a larger outer diameter than the outer tube 4A and protrudes outward. An exhaust port 4D communicating with the inside of the outer tube 4A is provided near the lower end of the reaction tube 4, and the entire reaction tube 4 is integrally formed of a single material such as quartz. Note that the double structure including the outer tube 4A and the inner tube 4B is not limited to an integral structure in which both are coupled to each other, and may be a separable structure.

The manifold 5 has a cylindrical or truncated cone shape, is made of metal or quartz, and is provided to support the lower end of the reaction tube 4. The inner diameter of the manifold 5 is formed larger than the inner diameter of the reaction tube 4, that is, the inner diameter of the flange 4C. Thereby, an annular space is formed between the flange 4 </ b> C at the lower end of the reaction tube 4 and the seal cap 19. This space or its surrounding members are collectively referred to as the furnace opening.

The inner pipe 4B has a main exhaust port 4E that communicates the inside and the outside on the side of the reaction tube at the back side of the exhaust port 4D, and a supply slit 4F at a position opposite to the main exhaust port 4E. . The main exhaust port 4E is a single vertically long opening that opens to a region where the wafer 7 is disposed. The supply slits 4 </ b> F are slits extending in the circumferential direction, and a plurality of supply slits 4 </ b> F are provided in the vertical direction so as to correspond to the respective wafers 7. In a space between the outer tube 4A and the inner tube 4B (hereinafter referred to as an exhaust space S), one or more nozzles 8 for supplying a processing gas such as a raw material gas are provided in correspondence with the position of the supply slit 4F. It has been. A gas supply pipe 9 for supplying a processing gas is connected to the nozzle 8 through the manifold 5.

The inner pipe 4B is further provided with a plurality of sub exhaust ports 4G that allow the processing chamber 6 and the exhaust space S to communicate with each other at a position farther behind the reaction tube 4 than the exhaust port 4D and more open than the main exhaust port 4E. It is done. The flange 4C is also formed with a plurality of bottom exhaust ports 4H and the like for communicating the processing chamber 6 and the lower end of the exhaust space S. In other words, the lower end of the exhaust space S is closed by the flange 4C except for the bottom exhaust port 4H and the like. The sub exhaust port 4G and the bottom exhaust port 4H mainly function to exhaust a shaft purge gas described later.

A mass flow controller (MFC) 10 that is a flow rate controller and a valve 11 that is an on-off valve are provided on the flow path of the gas supply pipe 9 in order from the upstream direction. A gas supply pipe 12 that supplies an inert gas is connected to the gas supply pipe 9 on the downstream side of the valve 11. The gas supply pipe 12 is provided with an MFC 13 and a valve 14 in order from the upstream direction. A processing gas supply unit that is a processing gas supply system is mainly configured by the gas supply pipe 9, the MFC 10, and the valve 11. As described above, the substrate processing apparatus shown in FIG. 1 uses the gas supply mechanism including the nozzle 8, the gas supply pipes 9 and 12, the MFCs 10 and 13, the valves 11 and 14, and the like. A first step for supplying the plurality of substrates; a second step for supplying a purge gas to the plurality of substrates; a third step for supplying a second source gas to the plurality of substrates; and a purge gas for the plurality of substrates. The substrate processing is performed by sequentially repeating the fourth step to be supplied to the substrate.

The nozzle 8 is provided in the gas supply space 4 so as to rise from the lower part of the reaction tube 4. One or a plurality of nozzle holes 8H for supplying gas are provided on the side surface and upper end of the nozzle 8. The plurality of nozzle holes 8H correspond to the respective openings of the supply slit 4F, and are opened so as to face the center of the reaction tube 4, so that gas can be injected toward the wafer 7 through the inner tube 4B. it can.

An exhaust pipe 15 that exhausts the atmosphere in the processing chamber 6 is connected to the exhaust port 4D. A vacuum pump 18 as a vacuum exhaust device is connected to the exhaust pipe 15 via a pressure sensor 16 as a pressure detector for detecting the pressure in the processing chamber 6 and an APC (Auto Pressure Controller) valve 17 as a pressure adjusting unit. It is connected. The APC valve 17 can perform evacuation in the processing chamber 6 and stop evacuation by opening and closing the valve while the vacuum pump 18 is operated. Further, the pressure in the processing chamber 6 can be adjusted by adjusting the valve opening degree based on the pressure information detected by the pressure sensor 16 in a state where the vacuum pump 18 is operated. .

Below the manifold 5, a seal cap 19 is provided as a furnace port lid that can airtightly close the lower end opening of the manifold 5. The seal cap 19 is made of, for example, a metal such as stainless steel or a nickel-based alloy, and is formed in a disk shape. An O-ring 19 </ b> A is provided on the upper surface of the seal cap 19 as a seal member that comes into contact with the lower end of the manifold 5. The O-ring as the seal member can be installed on the upper surface of the manifold 5 so as to contact the lower end of the flange 4C. A cover plate 20 that protects the seal cap 19 is provided on the upper surface of the seal cap 19 with respect to a portion inside the lower end inner periphery of the manifold 5. The cover plate 20 is made of a heat and corrosion resistant material such as quartz, sapphire, or SiC, and is formed in a disk shape.

The boat 21 as a substrate holder supports a plurality of, for example, 25 to 200, wafers 7 in a multi-stage by aligning them vertically in a horizontal posture and with their centers aligned. In this case, the wafers 7 are arranged at regular intervals. The boat 21 is made of a heat resistant material such as quartz or SiC. It may be desirable for the reaction tube 4 to have a minimum inner diameter that allows the boat 21 to be safely carried in and out.

A heat insulation assembly 22 is disposed at the bottom of the boat 21. The heat insulation assembly 22 has a structure that reduces heat conduction or transmission in the vertical direction, and usually has a cavity inside. The interior can be purged with a shaft purge gas. In the reaction tube 4, an upper portion where the boat 21 is disposed is referred to as a processing region A, and a lower portion where the heat insulating assembly 22 is disposed is referred to as a heat insulating region B.

Rotating mechanism 23 for rotating boat 21 is installed on the side of seal cap 19 opposite to processing chamber 6. A gas supply pipe 24 for shaft purge gas is connected to the rotation mechanism 23. The gas supply pipe 44c is provided with an MFC 25 and a valve 26 in order from the upstream direction.

The boat elevator 27 is provided vertically below the reaction tube 4 and operates as an elevating / lowering mechanism for moving the seal cap 19 up and down. Thereby, the boat 21 and the wafer 7 supported by the seal cap 19 are carried into and out of the processing chamber 6. Note that a shutter that closes the lower end opening of the reaction tube 4 may be provided instead of the seal cap 19 while the seal cap 19 is lowered to the lowest position.

A temperature detector 28 is installed on the outer wall of the outer tube 4A. The temperature detector 28 can be configured by a plurality of thermocouples arranged side by side. By adjusting the power supply to the heater 3 based on the temperature information detected by the temperature detector 28, the temperature in the processing chamber 6 becomes a desired temperature distribution.

The controller 29 is a computer that controls the entire substrate processing apparatus 1, and includes MFCs 10 and 13, valves 11 and 14, pressure sensor 16, APC valve 17, vacuum pump 18, heater 3, temperature detector 28, rotating mechanism 23, boat It is electrically connected to the elevator 27 and the like, and receives signals from them and controls them.

Although not shown in FIG. 1, in the substrate processing apparatus 1, a furnace port that forms an annular space between the reaction tube 4, a flange 4 </ b> C at the lower end thereof, and a seal cap 19 that is a lid of the furnace port part. A reaction tube fixing ring is used to connect the parts. 2A and 2B schematically show the substrate processing apparatus 1 using the reaction tube fixing ring 29 as a longitudinal sectional view and a transverse sectional view thereof. In the substrate processing apparatus 1, when heating is performed using the heater 3, the O-ring installed between the lower end of the flange and the manifold of the furnace opening portion at this time becomes high temperature. For this reason, a cooling water flow path (not shown) is provided inside the reaction tube fixing ring 29 to perform a cooling function for the O-ring portion installed between the flange and the manifold. However, when the exhaust port diameter of the reaction tube 4, that is, the diameter of the exhaust tube 15 is increased for the purpose of improving the exhaust efficiency in the reaction tube, the seal cap 19 and the exhaust tube 15 are close as shown schematically in FIG. Thus, the reaction tube fixing ring 29 cannot be provided up to the bottom of the exhaust pipe 15 at the exhaust port. In this case, since the cooling function of the O-ring located below the exhaust port, that is, the exhaust pipe 15, is lowered, it is necessary to limit the temperature of heating by the heater. Hereinafter, various embodiments of the present invention for solving this problem will be described.

In this embodiment, a substrate holder for arranging and holding a plurality of substrates, a cylindrical inner tube having an opening through which the substrate holder can be taken in and out, a flange on the outer periphery of the lower end, which is closed at the upper end, are provided. A reaction tube having a cylindrical outer tube configured to surround the inner tube, a furnace body that surrounds the top and sides of the reaction tube, a heater that heats the inside of the furnace body, and a flange through a seal member A mating member connected to each other, a heat insulating structure disposed between the substrate holder and the mating member, and a gas supply mechanism for supplying gas to a plurality of substrates held in the reaction tube. An exhaust pipe that fluidly communicates the space between the inner pipe and the outer pipe with the outside of the outer pipe in the vicinity of the flange, and a scattering plate provided at a position facing the exhaust pipe along the outer surface of the inner pipe It is an Example of the substrate processing apparatus which has.

FIG. 3 is a schematic diagram showing a configuration of a main part of the first embodiment. The principal part of the substrate processing apparatus which has the scattering plate 30 provided only in the position which opposes the exhaust pipe 15 along the outer surface of the inner pipe 4B of the reaction tube of a present Example was shown typically. The scattering plate 30 made of a radiation net that scatters radiation (light rays such as infrared rays) is a position substantially facing the exhaust pipe 15 so as to scatter and reflect radiation directly reaching the O-ring 19B below the exhaust pipe. And installed so as to cover the height between the straight line drawn from the upper part of the heater to the O-ring 19B and the straight line drawn from the lower part of the heater to the O-ring. As shown in FIGS. 3 (a) and 3 (b), the scattering plate 30 is provided at a position that takes into account the direction of arrival of thermal radiation, but the scattering plate 30 has an opening so as not to block the intermediate exhaust port. 30A is formed. That is, since the inner pipe 4B has a sub exhaust port (intermediate exhaust port) 4G that fluidly communicates the inner side and the outer side of the inner pipe at a position facing the exhaust pipe 15, a newly installed scattering plate 30 is configured to have an opening 30A having the same shape as the sub exhaust port 4G so as not to block the sub exhaust port 4G.

For the scattering plate 30 of the present embodiment, it is desirable to use quartz that is made opaque by forming a large number of minute cavities and voids that are inner bubbles. This type of opaque quartz remains opaque even when fired. Since the wavelength transmittance varies depending on the size of the void, it is preferable to select a void having an appropriate size according to the temperature of the reactor, 600 to 1000 ° C.

In addition, if the scattering plate 30 comes into contact with the inner tube of the reaction tube on the surface, it causes generation of particles, so that the number of contact portions needs to be reduced as much as possible. In this embodiment, as shown in FIGS. 3 (a) and 3 (b), the insertion-side hinges 31 are provided at the upper and lower ends of the scattering plate 30 at a total of four locations, a total of four locations, and the outer surface of the reaction tube inner tube 4B. It is inserted from above into a receiving-side hinge 32 corresponding to the above, and fitted and fitted. In FIG. 3, four hinges are used. However, it is desirable to use a minimum of three hinges and design so that there is as little play as possible in consideration of manufacturing intersections. In other words, the scattering plate 30 is attached to the inner tube 4B by being hooked with three or more hinges. The back surface of the mounted scattering plate 30, that is, the inner surface to be mounted is installed in a state slightly lifted from the outer surface of the inner tube of the reaction tube.

The scattering plate 30 may absorb heat. Further, instead of the scattering plate 30, a reflection plate having a structure in which a metal film is sandwiched between quartz or the like may be used. Moreover, you may comprise integrally with a reaction tube. For example, a metal film or a dielectric multilayer film (including TiO 2 or TaO 3) may be directly formed on the inner tube 4 B of the reaction tube, and a quartz or other ceramic thick film may be placed thereon to protect it. In the present specification, these plate-like structures having a scattering function are collectively referred to as a scattering plate.

According to the present embodiment, a scattering plate that suppresses radiation from the heater is installed at a position facing the exhaust port of the inner tube of the reaction tube without using a cylindrical heat shield ring. Thus, it is possible to efficiently suppress the temperature rise in the lower portion of the exhaust port of the seal member installed.

In this embodiment, a substrate holder for arranging and holding a plurality of substrates, a cylindrical inner tube having an opening through which the substrate holder can be taken in and out, a flange on the outer periphery of the lower end, which is closed at the upper end, are provided. A reaction tube having a cylindrical outer tube configured to surround the inner tube, a furnace body that surrounds the upper and sides of the reaction tube, a heater that heats the inside of the furnace body, and a flange that serves as a sealing member A reaction tube comprising: a mating member connected via the substrate holder; a heat insulating structure disposed between the substrate holder and the mating member; and a gas supply mechanism for supplying gas to the plurality of substrates held by the reaction tube. Is an exhaust pipe that fluidly communicates the space between the inner pipe and the outer pipe and the outside of the outer pipe in the vicinity of the flange, and a partial cooling block provided on the upper surface of the mating member and below the exhaust pipe Is an embodiment of a substrate processing apparatus having the following.

FIG. 4 is a schematic diagram showing a configuration of a main part of the second embodiment. As described with reference to FIG. 2, when the exhaust port diameter of the reaction tube 4, that is, the exhaust tube 15 is increased for the purpose of improving the exhaust efficiency in the reaction tube, the seal cap 19 and the exhaust tube 15 become closer, The reaction tube fixing ring 29 cannot be provided under the exhaust port. Therefore, in this embodiment, a structure in which a partial cooling block is cut into the lower portion of the exhaust pipe 15 is adopted.

That is, as shown in FIGS. 4 (a) and 4 (b), a notch 33 is provided in the built-up portion 34 below the exhaust port of the reaction tube 4 so that there is no problem in strength. The partial cooling block 36 made of a metal such as stainless steel, which extends from the cooling block 35 through which the cooling water can circulate, is configured to partially enter. The installation position of the cooling block 35 corresponds to a portion where the reaction tube fixing ring 29 below the exhaust tube 15 shown in FIG.

4 (a) and 4 (b), the exhaust pipe 15 is provided with a built-up portion 34 in order to maintain the strength near the base of the reaction tube 4. On the other hand, since it is desirable to provide the exhaust pipe 15 as close to the furnace port flange as possible below the reaction tube 4, the build-up portion 34 is partially connected to the furnace port flange 4C. In the present embodiment, in the lower portion of the build-up portion 34, a portion having no problem in strength, that is, a notch 33 is formed obliquely below, and the partial cooling block 36 enters the notch 33. It has a shape. By providing the partial cooling block 36, it is configured to partially cover the upper portion of the O-ring 19B installed on the upper surface of the manifold 5 which is the counterpart member, so that it also has a radiation reflection effect.

As shown in FIGS. 4C and 4D, in the configuration of the present embodiment, the reaction tube 15 is provided by the partial cooling block 36 extended into the notch 33 at the lower portion of the exhaust pipe 15. The temperature rise of the O-ring 19B, which is a seal member in the lower portion of the exhaust port, can be efficiently suppressed. An elastic member 38 shown in FIG. 3C is an elastic member made of a fluororesin sheet or a heat conductive sheet that closely contacts the partial cooling block 36 and the flange portion of the reaction tube. The heat conductive sheet is obtained by dispersing a high heat conductive filler such as aluminum nitride in a resin. In addition, as shown in FIG. 5C, a cooling water channel 37 that goes around inside the manifold 15 below the O-ring 19B installed on the upper surface of the manifold 5 is installed separately from the cooling block 35, The O-ring 19B can also be cooled by the cooling water flowing through.

According to the present embodiment, by arranging the partial cooling block under the exhaust port of the reaction tube, it is possible to efficiently suppress the temperature rise of the seal member in the lower portion of the exhaust port.

In addition, this invention is not limited to the above-mentioned Example, Various modifications are included. For example, the above-described embodiments have been described in detail for better understanding of the present invention, and are not necessarily limited to those having all the configurations described. Further, a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment. Further, it is possible to add, delete, and replace other configurations for a part of the configuration of each embodiment. In the above description of the embodiments of the present invention, the reaction tube has been described as a type in which the inner tube and the outer tube are integrated. However, the present invention is not limited to this, and a separable type reaction tube is provided. Needless to say, the present invention can also be applied to a substrate processing apparatus.

It can be applied to an apparatus for processing a semiconductor substrate or the like under reduced pressure, in a processing gas atmosphere or at a high temperature. For example, deposition such as CVD, PVD, ALD, epitaxial growth, or processing for forming an oxide film or a nitride film on the surface It can be applied to diffusion treatment and etching treatment.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus, 2 Processing furnace 3 Heater, 4 Reaction tube 5 Manifold, 6 Processing chamber 7 Wafer, 8 Nozzle 9, 12 Gas supply tube, 10, 13 MFC
11, 14 Valve 15 Exhaust pipe, 16 Pressure sensor 17 APC valve, 18 Vacuum pump 19 Seal cap, 19A, 19B O-ring 30 Scatter plate, 31, 32 Hinge 33 Notch part, 34 Overlay part 35 Cooling block, 36 part Cooling block 37 Cooling water flow path 38 Elastic member

Claims (8)

A substrate holder for arranging and holding a plurality of substrates;
A cylindrical inner tube having an opening through which the substrate holder can be taken in and out, and a cylindrical outer tube that is closed at the upper end and provided with a flange at the outer periphery of the lower end and configured to surround the inner tube A reaction tube having,
A furnace body surrounding the top and sides of the reaction tube;
A heater for heating the inside of the furnace body;
A mating member to which the flange is connected via a seal member;
A heat insulating structure disposed between the substrate holder and the mating member;
A gas supply mechanism for supplying gas to the plurality of substrates held by the substrate holder in the reaction tube,
In the vicinity of the flange, the reaction tube includes an exhaust pipe that fluidly communicates a space between the inner pipe and the outer pipe and the outside of the outer pipe, and the exhaust pipe along an outer surface of the inner pipe. The substrate processing apparatus comprised so that it might have a light-scattering plate provided in the position which opposes. The substrate processing apparatus according to claim 1,
A substrate processing apparatus, wherein the light scattering plate is configured to float on an outer surface of the inner tube. The substrate processing apparatus according to claim 1,
The inner pipe has an intermediate exhaust port for fluidly communicating the inner side and the outer side of the inner pipe at a position facing the exhaust pipe,
The substrate processing apparatus, wherein the light scattering plate is configured to have an opening having the same shape as the intermediate exhaust port. The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the light scattering plate is made opaque by a plurality of voids formed therein. The substrate processing apparatus according to claim 2,
The light scattering plate is fitted with a plurality of hinges formed on the inner tube such that three or more hinges of the light scattering plate are paired with the hinges, respectively. A substrate processing apparatus mounted on the inner tube. The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the reaction tube has a partial cooling block provided on the upper surface of the counterpart member and below the exhaust pipe. The substrate processing apparatus according to claim 6,
The partial cooling block includes a partial cooling unit that bites between the flange and the exhaust pipe, and at least a part of the partial cooling unit is configured to overlap the seal member. A substrate holder for arranging and holding a plurality of substrates, a cylindrical inner tube having an opening through which the substrate holder can be taken in and out, a top end closed and a flange provided at the outer periphery of the lower end, and the inner tube A cylindrical outer pipe configured to surround the exhaust pipe, an exhaust pipe that fluidly communicates a space between the inner pipe and the outer pipe and the outside of the outer pipe in the vicinity of the flange; In a reaction tube having a scattering plate provided at a position facing the exhaust pipe along the outer surface of the tube, while heating the inside of the furnace body surrounding the upper side and the side of the reaction tube with a heater A method of manufacturing a semiconductor device for processing the substrate.

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