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WO2019073729A1 - Procédé de production d'un moule par processus de gravure sèche - Google Patents

Procédé de production d'un moule par processus de gravure sèche Download PDF

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Publication number
WO2019073729A1
WO2019073729A1 PCT/JP2018/033362 JP2018033362W WO2019073729A1 WO 2019073729 A1 WO2019073729 A1 WO 2019073729A1 JP 2018033362 W JP2018033362 W JP 2018033362W WO 2019073729 A1 WO2019073729 A1 WO 2019073729A1
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WIPO (PCT)
Prior art keywords
gas
fluorine
sulfur hexafluoride
mixed gas
manufacturing
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PCT/JP2018/033362
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English (en)
Japanese (ja)
Inventor
浩 川嶋
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Enplas Corp
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Enplas Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
    • H10P50/242—

Definitions

  • the present invention relates to a method of manufacturing a mold by a dry etching method.
  • An optical element having an optical function is manufactured, for example, by molding a molding material such as resin or glass using a molding die.
  • a molding material such as resin or glass
  • an antireflection function as the optical function
  • a mold having a fine uneven structure on the surface is used.
  • the molding die the optical element to be obtained is formed on the surface thereof with an inverted concavo-convex structure to which the concavo-convex structure of the mold has been transferred, and the antireflection convexity is exhibited by the inverted concavo-convex structure.
  • Patent Document 1 a method of performing resist patterning using electron beam drawing, UV exposure and the like can be mentioned (Patent Document 1, Patent Document 2).
  • Patent Document 2 a method of performing resist patterning using electron beam drawing, UV exposure and the like.
  • electron beam lithography there are restrictions on the area and shape of patterning, the thickness of the workpiece, the material of the workpiece, etc., and it is difficult to form a fine uneven structure on the surface such as a flat surface or a curved surface of the mold.
  • the present invention provides a new method of manufacturing a mold which can form a fine uneven structure on the surface of the mold by reactive ion etching without requiring patterning or the like, for example.
  • the purpose is to
  • the method of manufacturing a mold having a concavo-convex structure on the surface of the present invention includes an etching step of generating plasma in the presence of mixed gas and performing reactive ion etching on the surface of a substrate It does not include the patterning step of patterning on the surface of the substrate before the etching step.
  • the mixed gas contains two fluorine-based gases, One of the two types of fluorine-based gas is sulfur hexafluoride gas (SF 6 ), The other is a fluorine-based gas other than sulfur hexafluoride gas.
  • the mold of the present invention is characterized by being produced by the above-mentioned production method of the present invention.
  • the method for producing a molded body according to the present invention is characterized by including the step of molding the forming raw material using the molding die according to the present invention.
  • the method for producing a concavo-convex structure having a concavo-convex structure on the surface of the present invention is Generating an plasma in the presence of a mixed gas to perform reactive ion etching on the surface of the substrate; It does not include the patterning step of patterning on the surface of the substrate before the etching step.
  • the mixed gas contains two fluorine-based gases, One of the two types of fluorine-based gas is sulfur hexafluoride gas (SF 6 ), The other is a fluorine-based gas other than sulfur hexafluoride gas.
  • a mixed gas containing at least two kinds of fluorine-based gas for example, a mold having a fine uneven structure formed on the surface is obtained without performing patterning or the like. be able to.
  • FIGS. 1A to 1C are schematic views showing an embodiment of a method of manufacturing a mold.
  • FIG. 2 (A) is a SEM image of a wafer etched under the conditions of Example 1, and (B) is a SEM image of a wafer etched under the conditions of Comparative Example 1.
  • FIG. 3 is a graph showing the relationship between the wavelength and the reflectance for the wafer of Example 1 and the wafer of Comparative Example 1.
  • (A) shows the reflectance (%) of the X axis at 0 to 50%. It is a graph shown, and (B) is a graph showing the reflectance (%) of the X axis at 0 to 3%.
  • FIG. 2 is a SEM image of a wafer etched under the conditions of Example 1
  • FIG. 3 is a graph showing the relationship between the wavelength and the reflectance for the wafer of Example 1 and the wafer of Comparative Example 1.
  • (A) shows the reflectance (%) of the X axis at 0 to 50%. It
  • FIG. 5 is a graph showing the relationship between wavelength and reflectance for the wafer of Example 2 and the wafer of Comparative Example 2.
  • (A) shows the reflectance (%) of the X axis at 0 to 50%. It is a graph shown, and (B) is a graph showing the reflectance (%) of the X axis at 0 to 3%.
  • (A) is a SEM image of a wafer etched under the conditions of Example 3
  • (B) is a SEM image of a wafer etched under the conditions of Comparative Example 3.
  • FIG. 6 is a SEM image of a wafer etched under the conditions of Comparative Example 3.
  • FIG. 7 is a graph showing the relationship between wavelength and reflectance for the wafer of Example 3 and the wafer of Comparative Example 3.
  • (A) shows the reflectance (%) of the X axis at 0 to 50%. It is a graph shown, and
  • (B) is a graph showing the reflectance (%) of the X axis at 0 to 3%.
  • the fluorine-based gas other than the sulfur hexafluoride gas is selected from tetrafluoromethane (CF 4 ), trifluoromethane (CHF 3 ), and cyclofluoride octabutane (C 4 F 8 ). And at least one selected from the group consisting of
  • the mixed gas is a mixed gas containing no oxygen.
  • the manufacturing method of the present invention is, for example, a gas other than the sulfur hexafluoride gas with respect to a total amount of the sulfur hexafluoride gas (SF 6 ) and a fluorine-based gas other than the sulfur hexafluoride gas in the mixed gas.
  • the proportion of fluorine-based gas is 20% or more.
  • the total proportion of the sulfur hexafluoride gas (SF 6 ) and the fluorine-based gas other than the sulfur hexafluoride gas is 80% or more.
  • the mixed gas is composed of sulfur hexafluoride gas (SF 6 ) and fluorine-based gas other than the sulfur hexafluoride gas.
  • the substrate includes a main body and a surface layer, and the surface layer is a metal layer.
  • the surface layer is a metal layer that reacts with the mixed gas.
  • the surface layer is at least one metal layer selected from the group consisting of tantalum (Ta), silicon (Si), titanium (Ti), and tungsten (W).
  • the substrate includes an intervening layer between the main body and the surface layer, and the intervening layer is a chromium (Cr) layer.
  • the intervening layer is a chromium (Cr) layer.
  • FIGS. 1A to 1C are schematic views showing an embodiment of a method of manufacturing a mold of the present embodiment.
  • (A) is a cross-sectional view of a main body constituting the substrate used in the etching step
  • (B) is a cross-sectional view of the substrate used in the etching step
  • (C) is It is sectional drawing of the shaping
  • molding die means a die used for molding.
  • the mold is not particularly limited.
  • a concavo-convex structure is formed on the surface of a Si wafer, a glass substrate, etc., a mold used as a mold for imprint molding or the like, an electrocast or thermosetting after the concavo-convex structure is formed.
  • the copy mold of the concavo-convex structure is manufactured with resin etc, and the mold used as a mold etc. are mention
  • a substrate is prepared (preparation step).
  • the form of the substrate used in the etching step is not particularly limited, and examples thereof include a substrate having a main body and a surface layer.
  • the surface layer is formed on the surface of the main body.
  • FIG. 1 (A) first, the main body 1 is prepared, and then, as shown in FIG. 1 (B), the surface of the main body 1 is sputtered, ion plated, vapor deposited or the like.
  • the substrate 10 is obtained by forming the surface layer 2.
  • the material of the main body 1 is, for example, metal.
  • the metal is not particularly limited, and examples thereof include stainless steel, prehardened steel, maraging steel, die steel, nonmagnetic steel (superhard steel), azrolled steel, copper, aluminum and the like.
  • the material of the surface layer 2 is preferably, for example, a metal that reacts with the mixed gas.
  • the metal that reacts with the mixed gas include tantalum (Ta), silicon (Si), titanium (Ti), tungsten (W), alloys thereof, and the like.
  • the thickness of the surface layer 2 is not particularly limited, and is, for example, 0.5 to 1 ⁇ m.
  • an intervening layer may be further included between the main body 1 and the surface layer 2.
  • the material of the intervening layer is, for example, metal, and specific examples thereof include chromium (Cr) and the like.
  • the thickness of the intervening layer is not particularly limited, and is, for example, 0.05 to 0.1 ⁇ m.
  • plasma is generated in the presence of mixed gas to perform reactive ion etching on the surface of the substrate (etching Process).
  • the etching process can be performed, for example, by generating plasma in the presence of the mixed gas using a general reactive ion etching apparatus.
  • the apparatus is not particularly limited, and examples thereof include a capacitively coupled ion etching apparatus and an inductively coupled ion etching apparatus.
  • the apparatus generally comprises a chamber (chamber) in which the substrate is placed during etching.
  • the chamber has, for example, a pair of electrodes, and plasma can be generated by applying a high frequency voltage between the pair of electrodes.
  • the surface of the substrate is etched by plasmatizing the mixed gas, and as shown in FIG. 1C, a mold 20 having a plurality of uneven structures 3 can be manufactured.
  • the introduction of the mixed gas into the chamber is preferably performed, for example, after evacuating the chamber.
  • a mixed gas mixed in advance may be introduced, or the various gases constituting the mixed gas may be mixed in the chamber by introducing them into the chamber. It may be gas.
  • the conditions for introducing the mixed gas into the chamber are not particularly limited.
  • the composition of the mixed gas is, for example, as described above, and specific examples will be described later.
  • the flow rate of the mixed gas is not particularly limited, and, for example, various gases contained in the mixed gas may be introduced at a ratio described later.
  • the gas pressure in the chamber is not particularly limited, and is, for example, 0.1 to 20 Pa.
  • the conditions for generating the plasma in the etching are not particularly limited.
  • the high frequency of the high frequency voltage is, for example, 1 MHz to 1 GHz.
  • the power of the high frequency voltage is, for example, 50 to 500 W, and the bias power is, for example, 0 to 500 W.
  • the time of the etching process is not particularly limited, for example, 0.5 to 60 minutes, and the process temperature is not particularly limited, for example, -20 to 30 ° C.
  • the mixed gas used in the present embodiment contains two types of fluorine-based gas, and one of the two types of fluorine-based gas is sulfur hexafluoride gas (SF 6 ), and the other is And fluorine-based gas other than sulfur hexafluoride gas (hereinafter, also referred to as non-SF 6 fluorine-based gas).
  • SF 6 sulfur hexafluoride gas
  • the present invention is characterized by using the above-mentioned mixed gas, and the other steps and conditions are not limited at all.
  • non-SF 6 fluorine-based gas examples include methane tetrafluoride (CF 4 ), trifluoromethane (CHF 3 ), cyclobutane octafluoride (C 4 F 8 ) and the like.
  • the non-SF 6 fluorine-based gas may be, for example, one type or two or more types in combination.
  • the flow rate of the SF 6 gas is, for example, 40 to 400 sccm (6.75 ⁇ 10 ⁇ 2 to 6.75 ⁇ 10 ⁇ 1 Pa / m 3 / sec).
  • the flow rate of the non-SF 6 fluorine-based gas can be set, for example, from the flow rate of the SF 6 gas and the ratio of the non-SF 6 fluorine-based gas to the SF 6 gas described later.
  • the total amount of the non-SF 6 fluorine-based gas and the SF 6 gas, the proportion of non-SF 6 fluorine-based gas, the lower limit is, for example, 20% or more, 25% or higher, 30% or more Or 35% or more
  • the upper limit is, for example, 70% or less, 60% or less, 55% or less, or 50% or less
  • the range is, for example, 20 to 70%, 20 to 60%, 20 to 55%, 20 to 50%, 25 to 70%, 25 to 60%, 25 to 55%, 25 to 50%, 30 to 70%, 30 to 60%, 30 to 55%, 30 to 50%, 35 to 70%, 35-60%, 35-55%, or 35-50%.
  • the mixed gas is, for example, the SF 6 may be a gas comprising said a non-SF 6 fluorine-based gas and a gas, may comprise the said SF 6 gas and a non-SF 6 fluorine gas and other gases.
  • the other gases are not particularly limited, and examples thereof include argon gas and the like.
  • the total proportion of the SF 6 gas and the non-SF 6 fluorine-based gas is, for example, 80% or more, 85% or more, 90% or more, or 100%.
  • the mixed gas preferably contains substantially no oxygen, for example.
  • substantially oxygen-free the mixing ratio of oxygen in the mixed gas is, for example, less than 1%, 0%, and not more than the detection limit.
  • the mold 20 manufactured by the manufacturing method of the present embodiment has the uneven structure 3 on the surface thereof.
  • the convex portion is, for example, conical.
  • the height of the projections is, for example, 70 to 250 nm, 75 to 240 nm, 80 to 150 nm, or 200 to 500 nm.
  • the width (diameter) of the bottom surface of the convex portion corresponding to the pitch of the convex portion is, for example, 50 to 300 nm, 50 to 200 nm, 55 to 150 nm, or 60 to 130 nm.
  • a substrate having only the main body may be used instead of the substrate having the main body and the surface layer.
  • the substrate having the main body and the surface layer may be used instead of the substrate having the main body and the surface layer.
  • the substrate has only a main body, for example, it is formed by generating plasma in the presence of the mixed gas and performing reactive ion etching on the surface of the substrate consisting of the main body without providing the above-mentioned surface layer. The type is obtained.
  • the material of the main body is preferably, for example, a metal that reacts with the mixed gas.
  • the metal that reacts with the mixed gas include tantalum (Ta), silicon (Si), titanium (Ti), tungsten (W), alloys thereof, and the like.
  • a mold having a fine uneven structure on the surface can be easily manufactured by the etching process. Further, according to the present invention, since the patterning step of patterning on the surface of the substrate is unnecessary before the etching step, and it is sufficient to perform the reactive ion etching using the mixed gas, for example, Irrespective of the surface structure (for example, a flat surface or a curved surface) of the substrate, the uneven structure can be easily formed.
  • molding die in this embodiment can be used not only a shaping
  • the description can be incorporated by replacing “mold” with “concave and convex structure”.
  • the mold obtained by the present invention has the fine uneven structure, for example, in a molded product produced using the mold, a surface of a reverse uneven structure in which the uneven structure is reversed is formed. it can.
  • the molded object which shows the reflection preventing ability which has the said inversion uneven structure on the surface can be obtained.
  • an optical element is preferable, for example.
  • the mold since the uneven structure is provided on the surface, for example, after a molded body is manufactured using the mold, the releasability of the molded body from the mold is also excellent.
  • the molding die since the surface of the inverted uneven structure can be formed on the molded body, the adhesive property of, for example, an adhesive or the like is improved by the inverted uneven structure, for example. As a result, adhesion can be improved.
  • the mold of the present invention is characterized by being manufactured by the method of manufacturing a mold of the present invention.
  • the mold of the present invention has a fine uneven structure on the surface as described above.
  • the description of the method for manufacturing the mold of the present invention can be incorporated into the mold of the present invention.
  • the molding die of the present invention is, for example, a molding die for an optical element, and specifically, for example, a molding die for an optical element exhibiting an antireflective ability.
  • the wavelength range of light for preventing reflection is not particularly limited.
  • the method for producing a molded body of the present invention is characterized by including a molding step of molding a molding material using the mold of the present invention.
  • the production method of the present invention is characterized by using the mold of the present invention, and the other steps and conditions are not particularly limited.
  • the forming raw material is not particularly limited, and can be appropriately determined, for example, according to the intended use of the formed body.
  • the molded body is the optical element, for example, transparent resin, glass and the like can be used, and the transparent resin is, for example, polymethyl methacrylate resin (PMMA), cycloolefin polymer (COP), cyclic olefin copolymer (COC) ), Polyether imide (PEI), etc.
  • PMMA polymethyl methacrylate resin
  • COP cycloolefin polymer
  • COC cyclic olefin copolymer
  • PEI Polyether imide
  • the molding method in the molding step is not particularly limited, and examples thereof include injection molding.
  • Example 1 In Example 1, a mixed gas of SF 6 gas and CHF 3 gas was used to perform reactive ion etching on the wafer. And about the wafer after the said process, the confirmation of the uneven structure of the surface and the measurement of the reflectance were performed.
  • Example 1 The etching conditions of Example 1 and Comparative Example 1 are shown in Table 1 below. Specifically, the etching was performed as follows using an etching apparatus (etching time: 30 minutes).
  • the wafer used was a disk-shaped plate with a diameter of 50 mm in which a tantalum (Ta) thin film was laminated on the surface of a silicon (Si) layer.
  • the thickness of the Si layer was 0.5 mm, and the thickness of the Ta thin film was 0.6 ⁇ m.
  • Comparative Example 1 the same conditions as in Example 1 (etching process time except that a mixed gas of SF 6 gas and O 2 gas was used instead of the mixed gas of SF 6 gas and CHF 3 gas Reactive ion etching was carried out at 28 to 30 minutes), and the unevenness of the surface was confirmed and the reflectance was measured on the treated wafer in the same manner.
  • FIG. 2 shows the surface of the wafer after the etching process (magnification 100,000 times, bar 100 nm), and (B) shows the wafer etched under the conditions of Comparative Example 1. It is a result (15,000 times of magnification, bar 1 micrometer). As shown in FIG.
  • the wafer of Comparative Example 1 has only a large number of holes formed with the laminated structure of the Si layer and the Ta thin film, and has a concavo-convex structure having a conical convex portion.
  • a hole having a diameter of 500 nm which penetrates the inside of the Si layer from the Ta thin film was formed.
  • the wafer of the first embodiment only by changing the kind of mixed gas, as shown in FIG. 2A, a fine and concavo-convex pattern is confirmed on the Si layer, and the convex portion is The tip has a sharp conical shape, and the height of the projections is high, and the pitch of the projections is also dense. Specifically, the height of the protrusions was 200 to 500 nm, and the width (diameter) of the bottom of the protrusions corresponding to the pitch was about 70 to 130 nm.
  • the molded body formed by using the mold has a reverse concavo-convex structure corresponding to the concavo-convex structure. That is, the concavo-convex structure of the mold and the reverse concavo-convex structure of the molded body are in a corresponding relationship.
  • the reflectance (%) for the light of 250 nm to 850 nm was measured for the wafer of Example 1 and the wafer of Comparative Example 1. Further, as a reference example, the reflectance (%) was similarly measured for the Ta thin film on the wafer before the etching process.
  • FIG. 3 is a graph showing the relationship between the wavelength and the reflectance, where (A) is a graph showing the reflectance (%) of the X axis at 0 to 50%, and (B) is a graph showing the X axis It is a graph showing the reflectance (%) at 0 to 3%.
  • the wafer of Example 1 was able to significantly reduce the reflectance compared to the wafer (reference example) before the etching process.
  • FIG. 3A the wafer of Example 1 was able to significantly reduce the reflectance compared to the wafer (reference example) before the etching process.
  • the wafer after the etching process of Comparative Example 1 had a reflectance of 0.2% in a narrow wavelength range (287 to 288 nm), while Example 1
  • the wafer after the etching process showed a lower reflectance of 0.12% in a wider wavelength range (417 to 425 nm). That is, since the fine concavo-convex structure has a conical shape in the wafer of Example 1 compared to the wafer of Comparative Example 1, more light in a wide wavelength range is absorbed into the fine concavo-convex structure and reflected light is suppressed. It can be said that
  • Example 2 The gas flow ratio was changed, and etching was performed in the same manner as in Example 1 and Comparative Example 1. The surface of the wafer after the etching was confirmed, and the reflectance was measured. The etching conditions of Example 2 and Comparative Example 2 are shown in Table 2 below.
  • FIG. 4 shows the surface of the wafer after the etching (magnification 100,000 times, bar 100 nm), and (B) shows the wafer etched under the conditions of Comparative Example 2. It is a result (100, 000 times magnification, bar 100 nm). As shown in FIG.
  • the tip has a sharp conical shape, and the height of the projections is high, and the pitch of the projections is also dense. Specifically, the height of the protrusions was 80 to 150 nm, and the width (diameter) of the bottom of the protrusions corresponding to the pitch was about 50 to 70 nm.
  • the reflectance (%) to light of 250 nm to 850 nm was measured. Further, as a reference example, the reflectance (%) was similarly measured for the Ta thin film on the wafer before the etching process.
  • FIG. 5 is a graph showing the relationship between the wavelength and the reflectance, where (A) is a graph showing the reflectance (%) of the X axis at 0 to 50%, and (B) is a graph showing the X axis It is a graph showing the reflectance (%) at 0 to 3%.
  • the wafer of Example 2 was able to reduce the reflectance significantly more than the wafer (reference example) before the etching process.
  • the wafer of Comparative Example 2 had a reflectance of 0.2% in a narrow wavelength range (335 to 336 nm), whereas the wafer of Example 2 had a reflectance of 0.2%.
  • the wafer of Example 2 has a conical shape whose tip is sharper than that of the wafer of Comparative Example 2, and light in a wide wavelength range is absorbed more into the fine uneven structure. It can be said that reflected light is suppressed.
  • Example 3 The gas flow ratio was changed, and etching was performed in the same manner as in Example 1 and Comparative Example 1. The surface of the wafer after the etching was confirmed, and the reflectance was measured. The etching conditions of Example 3 and Comparative Example 3 are shown in Table 3 below.
  • FIG. 6 shows the result of the wafer etched under the conditions of Example 3 (magnification 100,000 times, bar 100 nm), and (B) shows the wafer etched under the conditions of Comparative Example 3. It is a result (100, 000 times magnification, bar 100 nm). As shown in FIG.
  • the tip has a sharp conical shape, and the height of the projections is high, and the pitch of the projections is also dense. Specifically, the height of the protrusions was 80 to 130 nm, and the width (diameter) of the bottom of the protrusions corresponding to the pitch was about 50 to 100 nm.
  • the reflectance (%) for the light of 250 nm to 850 nm was measured for the wafer of Example 3 and the wafer of Comparative Example 3. Further, as a reference example, the reflectance (%) was similarly measured for the Ta thin film on the wafer before the etching process.
  • FIG. 7 is a graph showing the relationship between the wavelength and the reflectance, where (A) is a graph showing the reflectance (%) of the X axis at 0 to 50%, and (B) is a graph showing the X axis It is a graph showing the reflectance (%) at 0 to 3%.
  • the wafer of Example 3 was able to lower the reflectance significantly more than the wafer (reference example) before the etching process.
  • the wafer of Comparative Example 3 had a reflectance of 0.12% at 432 to 443 nm, while the wafer of Example 3 had a reflectance of 412 to 423 nm.
  • the wafer of Example 3 has a conical shape whose tip is sharper than that of the wafer of Comparative Example 3, and light in a wide wavelength range is absorbed more into the fine uneven structure body to suppress reflected light. It can be said that
  • a fine uneven structure is formed on the surface without performing patterning or the like. Can be obtained.

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  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
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  • Drying Of Semiconductors (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

La présente invention concerne un nouveau procédé de production d'un moule, qui est apte à former une structure fine en creux et en saillie sur la surface d'un moule par un processus de gravure ionique réactive sans nécessiter essentiellement de formation de motif et similaire. Un procédé de production d'un moule qui a une structure en creux et en saillie sur la surface selon la présente invention est caractérisé en ce qu'il comprend une étape de gravure dans laquelle un plasma est généré en présence d'un gaz mixte et une gravure ionique réactive est réalisée sur la surface d'un substrat et en ce qu'il ne comprend pas d'étape de formation de motif dans laquelle la surface du substrat est soumise à une formation de motif avant l'étape de gravure. Le procédé selon l'invention est également caractérisé en ce que : le gaz mixte contient deux types de gaz à base de fluor ; l'un des deux types de gaz à base de fluor est un gaz d'hexafluorure de soufre (SF6) ; et l'autre des deux types de gaz à base de fluor est un gaz à base de fluor autre qu'un gaz d'hexafluorure de soufre.
PCT/JP2018/033362 2017-10-13 2018-09-10 Procédé de production d'un moule par processus de gravure sèche Ceased WO2019073729A1 (fr)

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JP2009212289A (ja) * 2008-03-04 2009-09-17 Fujifilm Corp ドライエッチング方法及びドライエッチング装置
JP2015182465A (ja) * 2014-03-21 2015-10-22 ナルックス株式会社 成形型、光学素子及びそれらの製造方法
WO2017037918A1 (fr) * 2015-09-03 2017-03-09 ナルックス株式会社 Moule de moulage, procédé de fabrication de moule de moulage, et procédé de fabrication de réplique

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JP2007133153A (ja) * 2005-11-10 2007-05-31 Hitachi Ltd マイクロレンズ用型の製造方法

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JP2000174004A (ja) * 1998-12-03 2000-06-23 Chemitoronics Co Ltd プラズマエッチングの方法およびその装置
JP2009212289A (ja) * 2008-03-04 2009-09-17 Fujifilm Corp ドライエッチング方法及びドライエッチング装置
JP2015182465A (ja) * 2014-03-21 2015-10-22 ナルックス株式会社 成形型、光学素子及びそれらの製造方法
WO2017037918A1 (fr) * 2015-09-03 2017-03-09 ナルックス株式会社 Moule de moulage, procédé de fabrication de moule de moulage, et procédé de fabrication de réplique

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