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WO2014076983A1 - Procédé de fabrication de moule pour structures anti-réfléchissantes, et procédé d'utilisation en tant que moule pour structures anti-réfléchissantes - Google Patents

Procédé de fabrication de moule pour structures anti-réfléchissantes, et procédé d'utilisation en tant que moule pour structures anti-réfléchissantes Download PDF

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Publication number
WO2014076983A1
WO2014076983A1 PCT/JP2013/061889 JP2013061889W WO2014076983A1 WO 2014076983 A1 WO2014076983 A1 WO 2014076983A1 JP 2013061889 W JP2013061889 W JP 2013061889W WO 2014076983 A1 WO2014076983 A1 WO 2014076983A1
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WO
WIPO (PCT)
Prior art keywords
mold
antireflection
etching
substrate
sulfur hexafluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/061889
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English (en)
Japanese (ja)
Inventor
山本　和也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nalux Co Ltd
Original Assignee
Nalux Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nalux Co Ltd filed Critical Nalux Co Ltd
Priority to JP2014514650A priority Critical patent/JP5584907B1/ja
Priority to DE112013005487.6T priority patent/DE112013005487B4/de
Publication of WO2014076983A1 publication Critical patent/WO2014076983A1/fr
Priority to US14/663,746 priority patent/US20150192702A1/en
Anticipated expiration legal-status Critical
Priority to US15/808,321 priority patent/US10353119B2/en
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B29C33/424—Moulding surfaces provided with means for marking or patterning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
    • B29K2995/0018—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular optical properties, e.g. fluorescent or phosphorescent
    • H10P50/242—

Definitions

  • the present invention provides an antireflection structural mold manufacturing method capable of manufacturing a high performance antireflection structural mold without requiring patterning, and uses the method manufactured by the method as an antireflection structural mold. Related to how to use.
  • the antireflection structural mold is used for molding including injection molding of an optical element.
  • An antireflection structure formed of a lattice shape arranged at a pitch (period) smaller than the wavelength of light is used for the optical element.
  • a method of manufacturing a mold for such an antireflection structure a method is known in which a resist is patterned using interference exposure or an electron beam drawing apparatus, and etching or electroforming is performed.
  • a pattern with a fine pitch can be formed, and drawing on a curved surface, that is, pattern formation is also possible.
  • the area for forming the pattern increases, a very long processing time is required. Therefore, from a realistic viewpoint, the maximum area where a pattern can be formed is at most 10 mm square.
  • the method using interference exposure has the merit that a large area can be processed in a lump, but the resolution is limited. Therefore, the pitch cannot be made very fine. Moreover, when processing into a curved surface, there is little freedom of design. Therefore, there is a problem that the reflection characteristics deteriorate on the short wavelength side in the visible light region.
  • Patent Document 1 an antireflection structural mold manufacturing method that does not require patterning has also been developed.
  • Patent Document 1 has a problem in producing a high-performance anti-reflection structural mold. This point will be described later in comparison with the present invention.
  • black silicon for solar cells has been developed.
  • the technical field of black silicon and the technical field of optical element molds are completely different and are irrelevant, and there is nothing to suggest the relationship between the two.
  • the antireflection structural mold manufacturing method is an antireflection structural mold manufacturing method for manufacturing an antireflection structural mold using a reactive ion etching apparatus.
  • a mixed gas of sulfur hexafluoride and oxygen is introduced into the apparatus, a base material made of a semiconductor or metal material that reacts with sulfur hexafluoride is disposed, and the mixed gas is converted into plasma.
  • oxygen ions in the plasma and semiconductor or metal ions reacted with sulfur hexafluoride are combined to generate oxides at random positions on the surface of the base material, and the oxides are used as etching prevention masks.
  • the pitch on the surface of the base material is in the range of 0.05 to 0.35 micrometers and the depth is 0.2.
  • a fine lattice structure having an aspect ratio of 0.8 or more is formed in the range of 1 micrometer to 1 micrometer.
  • the manufacturing method according to the present embodiment does not require patterning for the etching prevention mask, and thus does not take time.
  • the method of Patent Document 1 uses a polymer as an etching prevention mask, whereas the manufacturing method according to the present invention uses a semiconductor or metal oxide as an etching prevention mask. Since the etching selectivity of a semiconductor or metal oxide is much higher than that of a polymer, a fine lattice structure with a higher aspect ratio can be formed.
  • the base material is silicon
  • the gas pressure of the mixed gas is 1 to 5 Pascals, and the proportion of oxygen in the mixed gas is 30 to 70%. .
  • the temperature of the base material is set to 30 ° C. or lower.
  • the base material is a layer coated on the surface of the metal core.
  • an antireflection fine lattice structure can be formed on the surface of an arbitrary shape.
  • the metal is titanium, tungsten, tantalum, a titanium alloy in which other elements are added to titanium, or tungsten in which other elements are added to tungsten. It is an alloy.
  • the method for manufacturing a diffraction grating mold having an antireflection fine grating structure includes the step of forming an antireflection fine grating structure on the surface of a substrate by the above-described antireflection structure mold manufacturing method.
  • the method further includes the step of further etching by the above-described antireflection structural mold manufacturing method.
  • a mixed gas of sulfur hexafluoride and oxygen is introduced into a reactive ion etching apparatus, and a substrate made of a semiconductor or metal material that reacts with sulfur hexafluoride is prepared.
  • the mixed gas is plasmatized, and oxygen ions in the plasma are combined with semiconductor or metal ions reacted with sulfur hexafluoride to generate oxides at random positions on the surface of the substrate.
  • oxide as an anti-etching mask, etching proceeds to the surface of the base material with sulfur hexafluoride so that the pitch on the surface of the base material is in the range of 0.05 micrometers to 0.35 micrometers.
  • a mold having a fine lattice structure having a depth in the range of 0.2 to 1 micrometer and an aspect ratio of 0.8 or more is used as an antireflection structure mold. It is a method to use.
  • an antireflection structure mold having a fine lattice structure formed on the surface by the above-described manufacturing method can be used.
  • the present invention is based on the inventor's completely new knowledge that a fine lattice structure formed on the surface by the above manufacturing method is used as a mold for an antireflection structure of an optical element.
  • the inventor has studied the above manufacturing method in detail based on the above-mentioned new knowledge, and has established a technique for using as a reflection preventing structure a fine lattice structure formed on the surface by the above manufacturing method. .
  • FIG. 1 is a diagram showing a configuration of a reactive ion etching apparatus 200 used in a method for manufacturing a mold for an antireflection structure according to the present invention.
  • the reactive ion etching apparatus 200 has an etching chamber 201.
  • a gas is supplied from the gas supply port 207 to the evacuated etching chamber 201.
  • the etching chamber 201 is provided with a gas exhaust port 209, and a valve 217 is attached to the gas exhaust port 209.
  • the gas pressure in the etching chamber 201 can be set to a desired pressure value by causing the control device 215 to operate the valve 217 in accordance with the measured value of the gas pressure gauge 213 attached to the etching chamber 201.
  • the etching chamber 201 is provided with an upper electrode 203 and a lower electrode 205, and plasma can be generated by applying a high frequency voltage by a high frequency power source 211 between both electrodes.
  • the lower electrode 205 is provided with a base material 101 which is a base material of an antireflection structural mold.
  • the lower electrode 205 can be cooled to a desired temperature by the cooling device 219.
  • the cooling device 219 uses, for example, a water-cooled chiller for cooling. The reason why the lower electrode 205 is cooled is to manage the etching reaction by setting the temperature of the substrate 101 to a desired temperature. The relationship between the temperature of the substrate 101 and the etching reaction will be described later.
  • the gas supplied to the etching chamber 201 is a mixed gas of sulfur hexafluoride and oxygen.
  • the base material is a semiconductor or metal that reacts with the above-described sulfur hexafluoride.
  • FIG. 2 is a flowchart for explaining the principle of the method of manufacturing a mold for an antireflection structure according to the present invention.
  • step S1010 of FIG. 2 the mixed gas is turned into plasma by applying a high frequency voltage.
  • step S1020 of FIG. 2 the oxygen ions in the plasma and the metal or semiconductor ions of the base material reacted with the fluorine-based gas (sulfur hexafluoride) are combined and attached as oxides at random positions on the surface of the base material. To do.
  • the above oxide is hardly etched with sulfur hexafluoride and functions as an etching prevention mask.
  • step S1030 of FIG. 2 the etching of the portion not covered with the oxide on the surface of the base material by sulfur hexafluoride proceeds using the oxide attached to the surface of the base material as a mask. As a result, a lattice shape is formed on the substrate surface.
  • the gas to be used is a mixed gas of sulfur hexafluoride (SF 6 ) and oxygen as described above.
  • the base material is a semiconductor or metal that reacts with sulfur hexafluoride.
  • Specific examples include silicon, titanium, tungsten, tantalum, a titanium alloy in which other elements are added to titanium, and a tungsten alloy in which other elements are added to tungsten.
  • Table 1 is a table
  • Table 2 is a table
  • the frequency of the high frequency power is 13.56 MHz, and the voltage is 200V.
  • the pitch of the fine lattice structure of the antireflection structure mold manufactured according to the above manufacturing conditions is about 0.2 micrometers, and the depth is about 0.3 micrometers.
  • the aspect ratio is about 1.5.
  • FIG. 3 is a flowchart showing a method for determining the processing conditions of the method for manufacturing an antireflection structure mold according to the present invention.
  • step S2010 of FIG. 3 initial values of the processing conditions are set. Specifically, for example, the values in Table 2 are set.
  • step S2020 of FIG. 3 the substrate is processed using a reactive ion etching apparatus in accordance with the set processing conditions.
  • step S2030 of FIG. 3 the reflectance of the manufactured mold is evaluated.
  • step S2040 of FIG. 3 the shape of the manufactured mold is evaluated.
  • the shape is evaluated using, for example, a scanning electron microscope.
  • step S2050 of FIG. 3 it is determined whether or not the manufactured mold is appropriate as an antireflection structure mold. If appropriate, terminate the process. If not appropriate, the process proceeds to step S2060.
  • step S2060 of FIG. 3 the machining conditions are corrected.
  • the method for modifying the machining conditions is as follows.
  • the aspect ratio of the grating needs to be 0.8 or more.
  • the gas partial pressure ratio, the substrate cooling temperature, and the etching time are mainly adjusted.
  • the partial pressure ratio of the mixed gas SF 6 gas is increased, the etching rate is increased, and when the substrate cooling temperature is lowered, the formation reaction of the silicon oxide (SiO) is promoted and the formation of the anti-etching film (mask) is promoted. Therefore, if the etching time (reaction time) is increased under these conditions, the aspect ratio increases.
  • the pitch of the grating needs to be 0.35 micrometers or less so as to be smaller than the wavelength of visible light.
  • the gas partial pressure ratio and the cooling temperature of the substrate are adjusted. If the oxygen partial pressure ratio is increased and the substrate cooling temperature is lowered, the pitch of the lattice becomes smaller.
  • Table 3 is a table showing adjustment ranges of various parameters in the above case (when the base material is silicon and the mixed gas is composed of sulfur hexafluoride (SF 6 ) and oxygen).
  • Table 4 shows titanium, tungsten, tantalum, a titanium alloy in which other elements are added to titanium, and a tungsten alloy in which other elements are added to tungsten.
  • the mixed gas is sulfur hexafluoride (SF 6 ). It is a table
  • the advantage of using silicon as the base material is that processing is easy, and the advantage of using metal as the base material is that the mold has excellent durability.
  • a mixed gas of sulfur hexafluoride and oxygen is used.
  • fluorine-based gases carbon tetrafluoride, trifluoromethane, etc.
  • FIG. 4 is a view for explaining a method of manufacturing a mold for antireflection structure on a plane.
  • FIG. 4A is a diagram showing a cross section of the base material 101 before the etching process.
  • FIG. 4B is a view showing a cross section of the surface of the substrate 101 obtained by etching the shape of the antireflection structure using a reactive ion etching apparatus.
  • FIG. 5 is a diagram for explaining a method of manufacturing an antireflection structural mold on a curved surface.
  • FIG. 5 (a) is a view showing a cross section of a mold core 110 having a curved surface processed by cutting or the like.
  • FIG. 5B is a view showing a cross section of the base 110 formed on the surface of the mold core 110.
  • the thin film 111 of the base material is formed by sputtering or vapor deposition.
  • FIG.5 (c) is a figure which shows the cross section of what processed the shape of the reflection preventing structure into the surface of the thin film 111 of the base material shown in FIG.5 (b) using the reactive ion etching apparatus.
  • the antireflection structure mold can be manufactured on an arbitrary curved surface.
  • FIG. 6 is a flowchart for explaining a method of manufacturing a mold for a diffraction grating having a fine structure for preventing reflection.
  • FIG. 7 is a view for explaining a method of manufacturing a mold for a diffraction grating having a fine structure for preventing reflection.
  • the shape of the antireflection structure is processed by etching the surface of the base 121 using a reactive ion etching apparatus.
  • FIG. 7A is a view showing a cross section of the base material 121 after the etching process.
  • step S3020 of FIG. 6 the surface of the base material 121 is subjected to etching processing of the shape of the antireflection structure using a reactive ion etching apparatus, and the surface of the antireflection mask corresponding to the diffraction grating is patterned.
  • FIG. 7B is a view showing a cross section of the surface of the base material 121 after the etching process, in which the etching prevention mask 125 corresponding to the diffraction grating is patterned.
  • the patterning of the etching prevention mask 125 will be described later.
  • step S3030 in FIG. 6 the surface of the substrate 121 after the etching process is subjected to etching using a reactive ion etching apparatus after the patterning of the etching prevention mask 125 corresponding to the diffraction grating is performed.
  • step S3040 of FIG. 6 the etching prevention mask 125 is removed.
  • the removal of the etching prevention mask 125 will be described later.
  • FIG. 7C is a diagram showing a cross section of a diffraction grating mold having an antireflection microstructure manufactured by the method shown in the flowchart of FIG.
  • FIG. 8 is a diagram for explaining the patterning of the etching prevention mask.
  • FIG. 8A is a view showing a cross section of the substrate 121 obtained by patterning the resist 123 corresponding to the diffraction grating on the surface of the substrate 121.
  • a metal 125 such as chromium or nickel that hardly reacts to a fluorine-based gas is vapor-deposited on the surface of the base material 121 on which the resist 123 corresponding to the diffraction grating is patterned. It is a figure which shows the cross section of a thing.
  • FIG. 8C shows the surface of the substrate 121 patterned with the resist 123 corresponding to the diffraction grating, as shown in FIG. It is a figure which shows the cross section of what peeled the resist 123 from what vapor-deposited metals 125, such as nickel.
  • the metal 125 such as chromium or nickel in FIG. 8C functions as an etching prevention mask.
  • the resist 123 shown in FIG. 8A can also be used as an etching prevention mask.
  • the etching selection ratio (difference in etching rate) between the resist and the base material is smaller than the etching selection ratio between a metal such as chromium or nickel and the base material, the processable depth becomes shallow.
  • FIG. 9 is a scanning electron micrograph of an antireflection structural mold produced by the method of the present invention.
  • the pitch of the grating of the antireflection structure is about 0.2 micrometers.
  • FIG. 10 is a scanning electron micrograph of a mold for a diffraction grating having an antireflection microstructure manufactured by the method of the present invention.
  • the pitch of the diffraction grating is about 2 micrometers, and the pitch of the grating of the antireflection structure is about 0.2 micrometers.
  • FIG. 11 shows a surface provided with an antireflection structure manufactured by the method of the present invention, a surface provided with an antireflection structure manufactured by a conventional method (method using an electron beam drawing apparatus), and an antireflection structure. It is a figure which shows the relationship between the reflectance of the surface which is not, and a wavelength.
  • the horizontal axis in FIG. 9 indicates the wavelength, and the vertical axis in FIG. 9 indicates the reflectance.
  • the reflectivity of the surface with the antireflection structure manufactured by the method of the present invention is smaller than the reflectivity of the surface with the antireflection structure manufactured by the method of the prior art in the entire wavelength range. It can be seen that an antireflection structure having high antireflection performance can be manufactured.
  • an antireflection structure having high antireflection performance can be manufactured without using patterning. According to this method, it is possible to manufacture a large-area antireflection structure mold without any restrictions other than the size of the reactive ion etching apparatus. Further, according to the present method, an antireflection structure mold for forming an antireflection microstructure on an arbitrary curved surface and an antireflection structure for forming a diffraction grating having an antireflection microstructure A metal mold can be manufactured.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

La présente invention concerne un procédé qui permet la fabrication d'un moule à hautes performances pour des structures anti-réfléchissantes sans nécessiter de mise en configuration. Un gaz mélangé composé d'hexafluorure de soufre et d'oxygène est introduit dans un appareil de gravure ionique réactive ; ensuite, une base composée d'un matériau fait d'un semi-conducteur ou d'un métal, chacun capable de réagir avec l'hexafluorure de soufre, est placée dans l'appareil ; ensuite, un plasma est généré à partir du gaz mélangé ; la liaison d'un ion d'oxygène dans le plasma à un ion du semi-conducteur ou du métal, dont la réaction avec l'hexafluorure de soufre a été réalisée, est permise, formant ainsi un oxyde dans une position aléatoire sur la surface de la base ; et ensuite, la gravure avec l'hexafluorure de soufre sur la surface de la base en utilisant l'oxyde en tant que masque de prévention de gravure est permise. De cette manière, une structure à fin treillis qui possède un pas qui varie de 0,05 à 0,35 micromètre, une profondeur de 0,2 à 1 micromètre et un rapport de forme de 0,8 ou plus peut être formée sur la surface de la base.
PCT/JP2013/061889 2012-11-16 2013-04-23 Procédé de fabrication de moule pour structures anti-réfléchissantes, et procédé d'utilisation en tant que moule pour structures anti-réfléchissantes Ceased WO2014076983A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014514650A JP5584907B1 (ja) 2012-11-16 2013-04-23 反射防止構造用金型製造方法、及び反射防止構造用金型としての使用方法
DE112013005487.6T DE112013005487B4 (de) 2012-11-16 2013-04-23 Verfahren zur Herstellung einer Form für eine Antireflexionsstruktur und einer Form für ein optisches Gitter
US14/663,746 US20150192702A1 (en) 2012-11-16 2015-03-20 Mold, optical element and method for manufacturing the same
US15/808,321 US10353119B2 (en) 2012-11-16 2017-11-09 Method for manufacturing mold or optical element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261727284P 2012-11-16 2012-11-16
US61/727,284 2012-11-16

Related Child Applications (1)

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US14/663,746 Continuation-In-Part US20150192702A1 (en) 2012-11-16 2015-03-20 Mold, optical element and method for manufacturing the same

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WO2014076983A1 true WO2014076983A1 (fr) 2014-05-22

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DE (1) DE112013005487B4 (fr)
WO (1) WO2014076983A1 (fr)

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WO2016158933A1 (fr) * 2015-03-31 2016-10-06 デクセリアルズ株式会社 Procédé de fabrication de corps maître, corps optique, élément optique, et dispositif d'affichage
WO2016159180A1 (fr) * 2015-03-31 2016-10-06 デクセリアルズ株式会社 Procédé de fabrication de maître, maître et corps optique
CN107848151A (zh) * 2015-09-03 2018-03-27 纳卢克斯株式会社 成型模具、成型模具的制造方法和复制品的制造方法
WO2019163630A1 (fr) * 2018-02-21 2019-08-29 ナルックス株式会社 Procédé de production d'un moule
US11978642B2 (en) 2019-06-11 2024-05-07 Nalux Co., Ltd. Method for producing plastic element provided with fine surface roughness

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