WO2018234032A1 - Korrosionsinihibitorschicht für kupferoberflächen auf bondsubstraten sowie verfahren zum schützen von zum drahtbonden vorgesehenen kupferoberflächen mit derselben - Google Patents
Korrosionsinihibitorschicht für kupferoberflächen auf bondsubstraten sowie verfahren zum schützen von zum drahtbonden vorgesehenen kupferoberflächen mit derselben Download PDFInfo
- Publication number
- WO2018234032A1 WO2018234032A1 PCT/EP2018/064775 EP2018064775W WO2018234032A1 WO 2018234032 A1 WO2018234032 A1 WO 2018234032A1 EP 2018064775 W EP2018064775 W EP 2018064775W WO 2018234032 A1 WO2018234032 A1 WO 2018234032A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- corrosion inhibitor
- inhibitor layer
- copper
- weight
- bondsubstrat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
- C23F11/141—Amines; Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
- C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
- C23C22/48—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
- C23C22/52—Treatment of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
- C23C22/68—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous solutions with pH between 6 and 8
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
- C23F11/149—Heterocyclic compounds containing nitrogen as hetero atom
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- H10W70/458—
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- H10W70/69—
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- H10W90/701—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H10W70/421—
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- H10W70/465—
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- H10W72/01515—
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- H10W72/01571—
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- H10W72/075—
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- H10W72/07511—
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- H10W72/5475—
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- H10W72/952—
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- H10W90/756—
Definitions
- the invention relates to bonded copper or copper-based alloyed bond substrates and to a method for protecting copper wire or copper-based alloy wire-bonding surfaces.
- a bond substrate having the features specified in the preamble of claim 1 is known from WO 2014/027566 A1.
- a bond substrate has a contact pad made of copper or a copper-based alloy, which is provided for bonding a wire made of copper or a copper-based alloy. During bonding, wire is welded to the copper or copper-based alloy of the contact pad.
- Copper surfaces made of copper or copper-based alloys are susceptible to corrosion. Oxide layers on copper surfaces can make it difficult or even prevent the bonding of wires to the surfaces. In order to protect bond substrates or their contact pads intended for bonding, copper surfaces can be coated with aluminum, aluminum silicon alloys, silver or other corrosion-resistant metals. However, known plating methods cause considerable expense.
- Object of the present invention is to show a way as provided for wire bonding surfaces of copper or copper-based alloys can be protected against corrosion with less effort without a separate step for removing a protective layer is required before bonding.
- an organic corrosion inhibitor layer which is applied to the copper surface or the surface of a copper-based alloy and contains as active ingredient a nitrogen-containing aliphatic hydrocarbon.
- Aliphatic hydrocarbons are also referred to as aliphatic for short.
- Heteroatom-containing aliphatic compounds, in particular nitrogen- and / or sulfur-containing aliphatics can adhere well to copper surfaces by van der Waals forces and have an oxidation-inhibiting effect, in particular if nitrogen-containing aliphates are used which have a reductive effect. In this way, contact fields of bond substrates can effectively and inexpensively protect against corrosion.
- the corrosion inhibitor layer is applied in a method according to the invention as a liquid layer, namely as an aqueous solution.
- the liquid layer can then form a solid corrosion inhibitor layer, for example by drying, or remain liquid, ie form a liquid corrosion inhibitor layer. After or during the drying of the applied solution, components contained therein can crosslink, ie form a polymer layer.
- the heteroatom-containing aliphatic compound (s) in a corrosion inhibitor layer of the invention may be, for example, urea derivatives or guanidine derivatives, e.g. Triphenylguanidine, act.
- the corrosion inhibitor layer without any water content preferably contains at least 20% by weight of nitrogen-containing aliphatic compounds, more preferably at least 40% by weight. Data in% by weight refer in the following to the corrosion inhibitor layer without any water content, ie its dry mass.
- the corrosion inhibitor layer contains, as further active ingredient, a nitrogen-containing heterocyclic aromatic compound, for example a tetrazole and / or triazole derivative.
- a nitrogen-containing heterocyclic aromatic compound for example a tetrazole and / or triazole derivative.
- aniline derivatives and isocyanatobenzene can be used as nitrogen-containing heterocyclic aromatics.
- Heterocyclic aromatics because of their aromatic ring containing both heteroatoms, for example nitrogen or sulfur, and carbon atoms, have a lone pair of electrons which allows particularly good adhesion to a metallic surface.
- the or one of the nitrogen-containing active substances of the corrosion inhibitor layer additionally contains sulfur.
- isothiocyanatobenzene can be used.
- Effective constituents of the corrosion inhibitor layer can be, for example, urea derivatives and / or aniline derivatives, preferably in combination with tetrazole derivatives.
- the corrosion inhibitor layer may contain as active constituents triphenylguanidine and / or phenylurea and / or isothiocyanatobenzene and / or tetrazole derivative.
- the Corrosion inhibitor layer can be applied as an aqueous solution, in which the active ingredients may for example have a content of 2 to 10 wt .-%.
- tetrazole derivatives are, in particular, 1-phenyl-1H-tetrazole-5-thiol and / or sodium 1-phenyl-1H-tetrazole-5-thiolate, preferably in a solution having a pH of from 9 to 12.
- the corrosion inhibitor layer is preferably at least 10% by weight, more preferably at least 30% by weight of one or more urea derivatives and one or more aniline derivatives and one or more tetrazole derivatives and / or triphenylguanidine and / or phenylurea and / or Isothiocyanatobenzene and / or tetrazole derivative.
- the corrosion inhibitor layer without the water fraction particularly preferably consists predominantly of one or more urea derivatives and one or more aniline derivatives and / or triphenylguanidine and / or phenylurea and / or isothiocyanatobenzene and one or more tetrazole derivatives.
- the corrosion inhibitor layer When applied, the corrosion inhibitor layer may have a significant amount of water, for example from 50% to 95% by weight.
- the corrosion inhibitor layer may contain 5 wt% or more, preferably 20 wt% or more, more preferably 30 wt% or more urea derivative.
- the corrosion inhibitor layer may contain 5% by weight or more, preferably 20% by weight or more, more preferably 30% by weight or more, of aniline derivative.
- the corrosion inhibitor layer may contain 3% by weight or more, preferably 20% by weight or more, more preferably 30% by weight or more of triphenylguanidine.
- the corrosion inhibitor layer may contain 5% by weight or more, preferably 20% by weight or more, more preferably 30% by weight or more of phenylurea.
- the corrosion inhibitor layer may contain 10% by weight or more, preferably 20% by weight or more, more preferably 30% by weight or more of isothiocyanatobenzene.
- the corrosion inhibitor layer may contain 5% by weight or more, preferably 10% by weight or more, of tetrazole derivative.
- the corrosion inhibitor layer contains no more than 30 wt .-% tetrazole derivative.
- the corrosion inhibitor layer can be inexpensively applied as a liquid and form a thin layer so that it does not have to be removed before bonding.
- the corrosion inhibitor layer has a thickness of not more than 400 nm. Even a corrosion inhibitor layer having a maximum thickness of 100 nm or less is sufficient for effective corrosion protection, for example, a corrosion inhibitor layer having a thickness of not more than 50 nm. Generally, a thickness of 10 nm, rarely thicknesses of 30 nm or more are required for effective corrosion protection.
- the corrosion inhibitor layer may contain as active ingredient 1-H-benzotriazole and / or benzimidazole and / or phosphates.
- the corrosion inhibitor layer may contain organic and / or inorganic acid, for example phosphate and / or sulfuric acid.
- the corrosion inhibitor layer may contain, for example, 1 wt.% Phosphate or more, about 5 wt.% Phosphate or more, without any water content. In this way, it is possible to realize an acidic corrosion inhibitor layer, which preferably has a pH of 4.0 or less, in particular 3.5 or less, for example 3.0 or less.
- the corrosion inhibitor layer can also be weakly acidic, neutral or weakly basic, for example by using as active constituents benzimidazoles and / or ethylene glycol isopropyl ether and / or aniline and / or Isothiocyanatobenzene and / or 1-H-benzotriazole and / or bisphenol A ethoxylate contains.
- a pH of 4 to 8 may be advantageous.
- the corrosion inhibitor layer contains at least 10% by weight of 1-H-benzotriazole and / or benzimidazole, preferably at least 20 wt .-% -H-benzotriazole and / or benzimidazole, said information on the Obtain corrosion inhibitor layer without water content.
- the corrosion inhibitor layer contains water, the content of 1-H-benzotriazole and / or benzimidazole may be lower based on the total weight.
- the bond substrate may be formed as a body intended to be inserted into a frame or around which a frame is made by injection molding, for example, the bond substrate may be a stamped part or an inlay. A part of the surface of this body forms a Maisleitersfeld, so it is intended for bonding wire.
- Such bond substrates often have patterned leadframes which then sit in mating compartments of a frame so that the bond pad is exposed.
- a corrosion inhibitor layer according to the invention can be used to protect a copper or copper-based alloy surface, which is provided for bonding wire and thus forms a contacting field, of an arbitrarily shaped bond substrate. Further details and advantages of the invention will be explained with reference to embodiments of the invention.
- Fig. 1 shows a section of an electronic module with a frame, in the subjects Bondsubstrate are arranged withmaschinetechniksfeldern.
- FIG. 1 shows a section of an electronic module 1 which has a frame 2 with compartments 3.
- bonding substrates 4 which may have an H-shaped cross section.
- the bond substrates 4 have Needlesêtsfelder 4a, which bonding wires 5 are attached, leading to a circuit board 6.
- the contacting fields 4a of the bonding substrate 4 are made of copper or a copper-based alloy, for example CuNi ß SiMg, and therefore susceptible to corrosion.
- the bond substrates 4 or at least their contacting fields 4a are therefore covered after their preparation with an organic corrosion inhibitor layer.
- the corrosion inhibitor layer is applied as an aqueous solution, for example by dipping or spraying. After application, the corrosion inhibitor layer may lose water and become a solid layer or remain a liquid layer.
- an acidic, aqueous solution of 1-H-benzotriazole and / or benzimidazole can be used for the corrosion inhibitor layer.
- the pH of such a solution is preferably below 4.0, for example below 3.5 or even below 3.0.
- the solution preferably contains one or more inorganic acids, for example phosphoric acid and / or sulfuric acid.
- a corrosion inhibitor layer preferably contains phosphates, for example, 1 wt% or more.
- 10 ml of 1 -H-benzotriazole and / or 10 ml of benzimidazole are mixed with 1 liter of water and then applied.
- 10 ml of inorganic acids such as phosphoric acid or sulfuric acid may be added to this mixture, it also being possible for the acid to be dissolved in phosphates, for example 1 to 10 mg of ammonium molybdophosphate.
- Such a corrosion inhibitor layer does not have any negative effects on the bondability of a 300 pm Cu wire to a CuNi 3 SiMg bond substrate surface and on a leadframe surface punched therefrom.
- a corrosion inhibitor consisting of 1-phenyl-1H-tetrazole-5-thiol and / or sodium-1-phenyl-1H-tetrazole-5-thiolate in combination with urea derivatives and / or can also be used for the corrosion inhibitor layer
- Aniline derivatives and / or Triphenylguanidin be used, wherein such a corrosion inhibitor layer preferably additionally contains phenylurea and isothiocyanatobenzene.
- 20 ml of such a corrosion inhibitor are mixed with 1 liter of water and then this aqueous solution is applied to a bond substrate 4. The solution can dry on the bond substrate and form a solid layer by crosslinking.
- a corrosion inhibitor can be prepared by mixing 10 mg of 1-phenyl-1H-tetrazole-5-thiol, 10 mg of sodium 1-phenyl-1H-tetrazole-5-thiolate, 10 mg of one or more urea derivatives, 10 mg of one or more of aniline derivatives, 10 mg of triphenylguanidine, 10 mg of phenylurea and 10 mg of isothiocyanatobenzene can be used, to which mixture 1 liter of water is added.
- Another possibility is to use benzimidazoles and ethylene glycol isopropyl ether as a corrosion inhibitor.
- aniline and / or isothiocyanatobenzene and / or 1-H-benzotriazole may each be used in combination with bisphenol A ethoxylate, wherein an acid may be mixed, for example an organic acid such as acetic acid. 100 ml to 200 ml of this corrosion inhibitor can be mixed with 1 liter of water and then applied as an aqueous solution to a bond substrate.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019570839A JP2020524906A (ja) | 2017-06-22 | 2018-06-05 | ボンディング基板及びワイヤボンディング用表面保護方法 |
| MX2019014822A MX2019014822A (es) | 2017-06-22 | 2018-06-05 | Sustrato de adhesión/unión y método para proteger superficies destinadas a la unión de alambre. |
| EP18729937.5A EP3642387A1 (de) | 2017-06-22 | 2018-06-05 | Korrosionsinihibitorschicht für kupferoberflächen auf bondsubstraten sowie verfahren zum schützen von zum drahtbonden vorgesehenen kupferoberflächen mit derselben |
| KR1020197037897A KR20200012910A (ko) | 2017-06-22 | 2018-06-05 | 본딩 표면상의 구리 표면을 위한 부식 억제제 층 및 부식 억제제 층을 사용하여 와이어 본딩에 제공된 구리 표면을 보호하기 위한 방법 |
| CN201880041322.7A CN110914472A (zh) | 2017-06-22 | 2018-06-05 | 键合基板和保护用于引线键合的表面的方法 |
| US16/722,179 US20200123665A1 (en) | 2017-06-22 | 2019-12-20 | Bonding substrate and method for protecting surfaces intended for wire bonding |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102017113871.4A DE102017113871A1 (de) | 2017-06-22 | 2017-06-22 | Bondsubstrat sowie Verfahren zum Schützen von zum Drahtbonden vorgesehenen Oberflächen |
| DE102017113871.4 | 2017-06-22 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US16/722,179 Continuation US20200123665A1 (en) | 2017-06-22 | 2019-12-20 | Bonding substrate and method for protecting surfaces intended for wire bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018234032A1 true WO2018234032A1 (de) | 2018-12-27 |
Family
ID=62563139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2018/064775 Ceased WO2018234032A1 (de) | 2017-06-22 | 2018-06-05 | Korrosionsinihibitorschicht für kupferoberflächen auf bondsubstraten sowie verfahren zum schützen von zum drahtbonden vorgesehenen kupferoberflächen mit derselben |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20200123665A1 (de) |
| EP (1) | EP3642387A1 (de) |
| JP (1) | JP2020524906A (de) |
| KR (1) | KR20200012910A (de) |
| CN (1) | CN110914472A (de) |
| DE (1) | DE102017113871A1 (de) |
| MX (1) | MX2019014822A (de) |
| WO (1) | WO2018234032A1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112164685B (zh) * | 2020-08-31 | 2023-03-31 | 浙江大学 | 一种有机包覆抗腐的键合银丝及其制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63261735A (ja) * | 1987-04-17 | 1988-10-28 | Hitachi Cable Ltd | リ−ドフレ−ム |
| US20060097366A1 (en) * | 2003-07-19 | 2006-05-11 | Ns Electronics Bangkok (1993) Ltd. | Semiconductor package including leadframe roughened with chemical etchant to prevent separation between leadframe and molding compound |
| EP2190014A1 (de) * | 2007-09-13 | 2010-05-26 | Mitsui Mining & Smelting Co., Ltd | Leitungsrahmen und leitungsrahmenherstellungsverfahren |
| WO2014027566A1 (en) | 2012-08-17 | 2014-02-20 | Fujifilm Corporation | Method of preventing oxidation and method of producing a semiconductor product |
| WO2016124382A1 (de) | 2015-02-03 | 2016-08-11 | Doduco Gmbh | Aluminium-kupferverbundhalbzeug für die elektrotechnik und verfahren zu seiner herstellung |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2204864A (en) * | 1987-04-29 | 1988-11-23 | Ciba Geigy Ag | Corrosion inhibition |
| US5141675A (en) * | 1990-10-15 | 1992-08-25 | Calgon Corporation | Novel polyphosphate/azole compositions and the use thereof as copper and copper alloy corrosion inhibitors |
| JPH07142627A (ja) * | 1993-11-18 | 1995-06-02 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US6524644B1 (en) * | 1999-08-26 | 2003-02-25 | Enthone Inc. | Process for selective deposition of OSP coating on copper, excluding deposition on gold |
| JP4740754B2 (ja) * | 2006-01-27 | 2011-08-03 | 株式会社大和化成研究所 | 変色防止剤組成物 |
| US7883738B2 (en) * | 2007-04-18 | 2011-02-08 | Enthone Inc. | Metallic surface enhancement |
| DE102007040065A1 (de) * | 2007-08-24 | 2009-02-26 | Ormecon Gmbh | Artikel mit einer nanoskopischen Beschichtung aus Edel-/Halbedelmetall sowie Verfahren zu deren Herstellung |
| US8253233B2 (en) * | 2008-02-14 | 2012-08-28 | Infineon Technologies Ag | Module including a sintered joint bonding a semiconductor chip to a copper surface |
| US7658617B1 (en) * | 2009-02-02 | 2010-02-09 | International Business Machines Corporation | Plastic land grid array (PLGA) module with inverted hybrid land grid array (LGA) interposer |
| JP2017122134A (ja) * | 2014-05-22 | 2017-07-13 | 日立化成株式会社 | 金属膜用研磨液及びそれを用いた研磨方法 |
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2017
- 2017-06-22 DE DE102017113871.4A patent/DE102017113871A1/de not_active Ceased
-
2018
- 2018-06-05 EP EP18729937.5A patent/EP3642387A1/de not_active Withdrawn
- 2018-06-05 JP JP2019570839A patent/JP2020524906A/ja active Pending
- 2018-06-05 KR KR1020197037897A patent/KR20200012910A/ko not_active Ceased
- 2018-06-05 MX MX2019014822A patent/MX2019014822A/es unknown
- 2018-06-05 CN CN201880041322.7A patent/CN110914472A/zh active Pending
- 2018-06-05 WO PCT/EP2018/064775 patent/WO2018234032A1/de not_active Ceased
-
2019
- 2019-12-20 US US16/722,179 patent/US20200123665A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63261735A (ja) * | 1987-04-17 | 1988-10-28 | Hitachi Cable Ltd | リ−ドフレ−ム |
| US20060097366A1 (en) * | 2003-07-19 | 2006-05-11 | Ns Electronics Bangkok (1993) Ltd. | Semiconductor package including leadframe roughened with chemical etchant to prevent separation between leadframe and molding compound |
| EP2190014A1 (de) * | 2007-09-13 | 2010-05-26 | Mitsui Mining & Smelting Co., Ltd | Leitungsrahmen und leitungsrahmenherstellungsverfahren |
| WO2014027566A1 (en) | 2012-08-17 | 2014-02-20 | Fujifilm Corporation | Method of preventing oxidation and method of producing a semiconductor product |
| WO2016124382A1 (de) | 2015-02-03 | 2016-08-11 | Doduco Gmbh | Aluminium-kupferverbundhalbzeug für die elektrotechnik und verfahren zu seiner herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200012910A (ko) | 2020-02-05 |
| MX2019014822A (es) | 2020-07-14 |
| JP2020524906A (ja) | 2020-08-20 |
| US20200123665A1 (en) | 2020-04-23 |
| EP3642387A1 (de) | 2020-04-29 |
| CN110914472A (zh) | 2020-03-24 |
| DE102017113871A1 (de) | 2018-12-27 |
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