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WO2018117027A1 - Cleaning device, wiring correction device, and cleaning method - Google Patents

Cleaning device, wiring correction device, and cleaning method Download PDF

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Publication number
WO2018117027A1
WO2018117027A1 PCT/JP2017/045331 JP2017045331W WO2018117027A1 WO 2018117027 A1 WO2018117027 A1 WO 2018117027A1 JP 2017045331 W JP2017045331 W JP 2017045331W WO 2018117027 A1 WO2018117027 A1 WO 2018117027A1
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WO
WIPO (PCT)
Prior art keywords
carbon dioxide
liquefied carbon
dioxide gas
unit
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/045331
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French (fr)
Japanese (ja)
Inventor
鈴木 良和
庸輔 久住
大輔 田ノ岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
V Technology Co Ltd
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Publication of WO2018117027A1 publication Critical patent/WO2018117027A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • H10P14/40
    • H10P52/00
    • H10W20/01
    • H10W20/40

Definitions

  • the present invention relates to a cleaning device, a wiring correction device including the cleaning device, and a cleaning method, and more particularly, removes deposits such as metal particles generated when a wiring pattern formed on a substrate surface is corrected. Regarding technology.
  • FPD Flexible Panel Display
  • a repair process is performed.
  • a processing apparatus disclosed in Patent Document 1 As repair processing, so-called ZAPPING processing (hereinafter referred to as ZAP processing) in which a wiring pattern is cut by a laser beam, or so-called laser CVD repair processing in which wiring connection is performed by film formation by a laser CVD (Chemical Vapor Deposition) method.
  • ZAP processing so-called ZAPPING processing
  • laser CVD repair processing in which wiring connection is performed by film formation by a laser CVD (Chemical Vapor Deposition) method.
  • laser CVD processing laser CVD processing
  • metal particles accumulate on and adhere to the substrate around the metal wiring.
  • the above-mentioned metal scraps and metal particles adhering to the substrate may cause problems such as an electronic circuit insulation failure, a defect in a post-process, a display panel non-uniformity, and the like. For this reason, it is required to reduce or remove metal scraps and metal particles on the substrate.
  • As a method of removing these metal scraps and metal particles there is a method of removing by wet cleaning.
  • the present invention has been made in view of the above-described problems, and is a cleaning device, a wiring correction device, and a cleaning device that can easily remove metal scraps and metal particles adhering to a substrate by a repair process without performing wet cleaning. It aims to provide a method.
  • an aspect of the present invention is a cleaning apparatus for a surface of a substrate on which unnecessary deposits adhere after a wiring repair process, and is liquefied toward the surface of the substrate.
  • a liquefied carbon dioxide gas injection unit that injects carbon dioxide gas to change the liquefied carbon dioxide gas into dry ice fine particles by adiabatic expansion, and a surface position and a surface of the substrate on which the dry ice fine particles injected from the liquefied carbon dioxide gas injection unit collide
  • An observation unit that allows the position of an unnecessary deposit that the dry ice fine particles collide to be identified by observing the state.
  • a dust collecting part that sucks immediately after the unnecessary adhering matter separated from the substrate due to collision with dry ice fine particles.
  • control unit that performs position control of the liquefied carbon dioxide gas injection unit so that dry ice fine particles collide with unnecessary deposits based on surface position information and surface state information from the observation unit.
  • the said liquefied carbon dioxide injection part, the said observation part, and the said dust collection part are mounted in the positioning mechanism, and the said positioning mechanism was drive-controlled by the said control part, and was injected from the said liquefied carbon dioxide injection part It is preferable that the dry ice fine particles are positioned so as to collide with unnecessary deposits.
  • an air supply path for supplying auxiliary gas injected together with the liquefied carbon dioxide gas communicates with the liquefied carbon dioxide gas injection unit.
  • an air supply unit that supplies auxiliary gas to the air supply path
  • the control unit determines whether the repair process is performed in any one of the ZAP process and the laser CVD process. It is preferable to change the delivery pressure of the supply unit.
  • a liquefied carbon dioxide cylinder for supplying liquefied carbon dioxide gas to the liquefied carbon dioxide injection unit is movably mounted on the positioning mechanism together with the liquefied carbon dioxide injection unit.
  • a liquefied carbon dioxide gas cylinder may be connected to the liquefied carbon dioxide gas injection section via a movable pressure-resistant hose having flexibility, and the liquefied carbon dioxide gas cylinder may be arranged outside the apparatus.
  • a cooling unit that cools the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide injection unit.
  • a valve is provided in the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide jet section.
  • Another aspect of the present invention is a wiring correction device, comprising the cleaning device having the above-described configuration, and a source gas unit for supplying a source gas for laser CVD processing, and a laser on a wiring formation region on the substrate. And a CVD laser oscillator for photolyzing the source gas supplied from the source gas unit, and a ZAP laser oscillator for irradiating a laser to cut the wiring on the substrate.
  • Another aspect of the present invention is a cleaning method, wherein the position of the unnecessary deposit on the substrate to which the unnecessary deposit has adhered after the wiring repair process is specified, and liquefied toward the identified position of the unnecessary deposit.
  • Carbon dioxide gas is injected, liquefied carbon dioxide gas is changed into dry ice fine particles by adiabatic expansion and collided with the unnecessary deposits, and unnecessary deposits immediately after being peeled off from the substrate are sucked and removed.
  • the liquefied carbon dioxide gas is sent out together with the auxiliary gas, and the auxiliary gas delivery pressure is changed depending on whether the repair process is performed in any one of the ZAP processing and the laser CVD processing.
  • unnecessary deposits such as metal debris and metal particles adhering to the substrate by the repair process can be easily removed without wet cleaning.
  • the present invention it is possible to reliably cause the dry ice fine particles to collide with unnecessary deposits by specifying the position to be ejected from the liquefied carbon dioxide gas ejecting section by the observation section. Further, according to the present invention, for example, unnecessary deposits can be easily removed regardless of whether the repair process is ZAP processing or laser CVD processing.
  • the unnecessary deposits that have been peeled off from the substrate can be recovered without being diffused. it can. Therefore, according to the present invention, it is not necessary to wet-clean the substrate after the cleaning process, and the time for the cleaning process can be greatly shortened.
  • the dry ice fine particles are provided by including a control unit that controls the position of the liquefied carbon dioxide gas injection unit so that the dry ice fine particles collide with the unnecessary deposit based on the surface position information and the surface state information from the observation unit. Can reliably collide with unnecessary deposits, and the cleaning time can be shortened.
  • the liquefied carbon dioxide injection unit, the observation unit, and the dust collecting unit are mounted on the positioning mechanism, and the positioning mechanism is driven and controlled by the control unit, so that the dry ice fine particles injected from the liquefied carbon dioxide injection unit are unnecessary. Since it positions so that it may collide with a kimono, a washing
  • the dust collection part is provided, the deposit
  • the liquefied carbon dioxide gas injection unit is provided with an air supply path for supplying auxiliary gas injected together with the liquefied carbon dioxide gas. Therefore, in the present invention, it is possible to adjust the blowing strength of an auxiliary gas (for example, clean dry air) containing liquefied carbon dioxide gas (dry ice fine particles). Therefore, the cleaning performance by the dry ice fine particles can be adjusted and controlled by controlling the delivery pressure of the auxiliary gas.
  • an auxiliary gas for example, clean dry air
  • liquefied carbon dioxide gas dry liquefied carbon dioxide gas
  • an air supply unit that supplies auxiliary gas to the air supply path is provided, and the control unit determines whether the repair process is performed in any one of the ZAP processing and the laser CVD processing.
  • reliable cleaning can be performed according to the state of the cleaning part.
  • a liquefied carbon dioxide gas cylinder that supplies liquefied carbon dioxide gas to the liquefied carbon dioxide gas injection unit may be mounted on the positioning mechanism so as to be movable together with the liquefied carbon dioxide gas injection unit. It is good also as a structure to which the liquefied carbon dioxide gas cylinder arrange
  • the temperature of the liquefied carbon dioxide supplied to the liquefied carbon dioxide injection section can be maintained at a low temperature by providing the cooling section for cooling the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide injection section. That is, according to the present invention, the temperature of the liquefied carbon dioxide gas supplied to the liquefied carbon dioxide gas injection unit can be set to a temperature at which it is easily changed to dry ice fine particles by adiabatic expansion. Therefore, according to the present invention, it is possible to omit the waiting time from the start of the injection of the liquefied carbon dioxide gas from the liquefied carbon dioxide injection unit to the injection of an appropriate amount of dry ice fine particles.
  • the working time of the cleaning process can be shortened, and it is possible to always inject dry ice fine particles having an appropriate injection amount.
  • the particle size of the dry ice fine particles injected from the liquefied carbon dioxide injection unit is controlled by changing the temperature of the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide injection unit by the cooling unit. be able to. Therefore, according to the present invention, it is possible to efficiently remove unwanted deposits by controlling the particle size of the dry ice fine particles in accordance with the type and deposit state of unwanted deposits on the substrate.
  • the delivery amount of liquefied carbon dioxide can be adjusted by providing a valve in the flow path for sending liquefied carbon dioxide to the liquefied carbon dioxide jet. Therefore, according to the present invention, the cleaning performance with dry ice fine particles can be adjusted and controlled by controlling the amount of liquefied carbon dioxide delivered by the valve. Moreover, according to this invention, the outflow of liquefied carbon dioxide from a liquefied carbon dioxide injection part can be prevented by closing a valve at the time of standby.
  • a raw material gas unit including the above-described cleaning device and supplying a raw material gas for laser CVD processing, and a raw material supplied from the raw material gas unit by irradiating a wiring formation region on the substrate with a laser beam Moving the substrate or replacing the device by using a wiring correction device comprising a CVD laser oscillator for photolysis of gas and a ZAP laser oscillator for irradiating a laser to cut the wiring pattern on the substrate
  • a wiring correction device comprising a CVD laser oscillator for photolysis of gas and a ZAP laser oscillator for irradiating a laser to cut the wiring pattern on the substrate
  • the position of the unnecessary deposit on the substrate to which the unnecessary deposit has adhered after the wiring repair process is specified, and the liquefied carbon dioxide gas is sprayed toward the position of the unwanted deposit to insulate the liquefied carbon dioxide.
  • the present invention it is possible to reliably remove unnecessary deposits such as metal debris and metal particles attached to the substrate along with the repair process, so that an insulation failure of the electronic circuit, a defect in a subsequent process, for example, Occurrence of problems such as display unevenness of the display panel can be prevented.
  • unnecessary deposits can be easily removed regardless of whether the repair process is ZAP processing or laser CVD processing.
  • FIG. 1 is a configuration diagram showing an outline of a wiring correction device according to a first embodiment of the present invention.
  • FIG. 2 is a flowchart showing a cleaning method according to the first embodiment of the present invention.
  • FIG. 3A is an explanatory plan view showing a substrate having a wiring defect for performing a laser CVD repair process using the wiring correction apparatus according to the first embodiment of the present invention.
  • FIG. 3-2 is a plan view of the substrate showing a state where the laser CVD repair process is performed using the wiring correction apparatus according to the first embodiment of the present invention.
  • FIG. 3-3 is a plan view of the substrate showing a state in which unnecessary deposits are cleaned using the cleaning device in the wiring correction device according to the first embodiment of the present invention.
  • FIG. 4 is a configuration diagram showing an outline of a wiring correction apparatus according to the second embodiment of the present invention.
  • FIG. 5 is a configuration diagram of a cleaning device that is a main part of a wiring correction device according to a third embodiment of the present invention.
  • FIG. 1 shows a wiring correction device 1 according to a first embodiment of the present invention.
  • the wiring correction device 1 includes a cleaning device 2 and a wiring correction device main body 3. (Cleaning device)
  • the cleaning device 2 is mounted on a gantry stage 4 as a positioning mechanism.
  • the gantry stage 4 is mounted on a base (not shown), and a table 6 on which a correction substrate 5 is arranged is provided on the base.
  • the correction substrate 5 is a target for correcting the wiring using the wiring correction device main body 3.
  • a TFT substrate constituting a display device such as a liquid crystal display device, a semiconductor substrate, or the like can be applied.
  • the cleaning device 2 includes a cleaning device main body 7, a liquefied carbon dioxide gas cylinder 8A built in the cleaning device main body 7, a liquefied carbon dioxide gas delivery unit 10 connected to the liquefied carbon dioxide gas cylinder 8A via a flow path 9, A liquefied carbon dioxide injection nozzle 12 as a liquefied carbon dioxide injection section connected to the liquefied carbon dioxide delivery section 10 via a flow path 11, a positioning observation camera 13 as an observation section, and a liquefied carbon dioxide injection nozzle 12 An air supply path 14 that communicates, a CDA supply section 15 as an air supply section that supplies clean air (CDA) as an auxiliary gas to the air supply path 14, a dust collection section 16, and a dust collection section 16 that communicates with each other The air discharge path 17 and the control unit 18 are provided.
  • clean dry air (CDA) is used as the auxiliary gas, but nitrogen gas may be used.
  • the liquefied carbon dioxide injection nozzle 12 is provided at the lower part of the cleaning apparatus body 7 and protrudes obliquely downward toward the correction substrate 5 disposed on the table 6.
  • the positioning observation camera 13 is disposed above the protruding tip portion 12A of the liquefied carbon dioxide gas injection nozzle 12.
  • a suction port 16 ⁇ / b> A of the dust collecting unit 16 is disposed in the vicinity of the tip end portion 12 ⁇ / b> A of the liquefied carbon dioxide gas injection nozzle 12.
  • the liquefied carbon dioxide spray nozzle 12 is directed toward the surface of the correction substrate 5 where there is a piled up deposit (hereinafter referred to as unnecessary deposits) adhering to the vicinity of the wiring 5A after the repair processing of the wiring 5A on the correction substrate 5. Inject liquefied carbon dioxide.
  • the liquefied carbon dioxide injected from the liquefied carbon dioxide injection nozzle 12 changes into dry ice fine particles by adiabatic expansion immediately after the injection.
  • the positioning observation camera 13 observes the surface position and surface state of the correction substrate 5 on which the dry ice fine particles ejected from the liquefied carbon dioxide gas injection nozzle 12 collide, and identifies the position of unnecessary deposits on which the dry ice fine particles collide. Make it possible to do.
  • the particle size of the dry ice fine particles is adjusted to about 30 ⁇ m, but can be adjusted to 5 to 200 ⁇ m. Such a particle size is significantly smaller than that when a dry ice lump is pulverized and used, and the inner diameter of the liquefied carbon dioxide gas injection nozzle 12 can be set to the order of microns. Further, the pressure at which the dry ice fine particles collide with the unnecessary deposits can be adjusted to 0.1 to 1 MPa.
  • the dust collecting unit 16 sucks the unnecessary deposits separated from the correction substrate 5 due to the collision of the dry ice fine particles immediately after peeling.
  • the control unit 18 is originally provided in the wiring correction device main body 3 and is liquefied carbonic acid so that dry ice fine particles collide with unnecessary deposits based on surface position information and surface state information from the observation camera 13 for positioning.
  • the position of the gas injection nozzle 12 is set to be controlled.
  • the cleaning device main body 7 including the liquefied carbon dioxide spray nozzle 12, the positioning observation camera 13, and the dust collecting unit 16 is mounted on the gantry stage 4.
  • the gantry stage 4 is driven by a gantry stage drive unit 19.
  • the gantry stage drive unit 19 is driven and controlled by the control unit 18.
  • a CDA supply unit 15 for supplying clean dry air as an auxiliary gas to be injected together with the liquefied carbon dioxide gas is communicated with the liquefied carbon dioxide injection nozzle 12 via the air supply path 14.
  • the control unit 18 controls the air delivery pressure of clean dry air of the CDA supply unit 15. For this reason, in this Embodiment, the blowing intensity
  • the liquefied carbon dioxide delivery pressure of the liquefied carbon dioxide delivery unit 10 may be controlled.
  • control unit 18 performs CDA depending on whether a repair process (to be described later) performed in the wiring correction device body 3 is performed in any one of the ZAP process (cutting repair process) and the laser CVD process (laser CVD repair process).
  • the delivery pressure of the supply unit 15 can be changed.
  • the amount of liquefied carbon dioxide used per time jetted from the liquefied carbon dioxide jet nozzle 12 is about 1 g for about 3 seconds.
  • the weight of the liquefied carbon dioxide cylinder 8A is 5 kg, and the cylinder diameter is ⁇ 140 ⁇ 570 mm.
  • the weight of the liquefied carbon dioxide cylinder 8A when full is 14 kg (internal pressure 7 MPa).
  • the cylinder replacement frequency may be replaced every 10,000 corrections.
  • unnecessary and foreign deposits such as metal debris and metal particles attached on the correction substrate 5 by the repair process performed in the wiring correction device main body 3 are easily and accurately dry-cleaned. be able to.
  • the cleaning device 2 it is possible to reliably remove unnecessary deposits having a large adhesion force to the correction substrate 5 caused by laser CVD processing described later.
  • the production efficiency of an FPD including a TFT substrate can be improved.
  • unnecessary deposits attached to the correction substrate 5 along with the repair process can be surely removed, an insulation failure of an electronic circuit, a defect in a later process, a defect such as a display unevenness of a display panel, for example Can be prevented.
  • the position to be sprayed from the liquefied carbon dioxide spray nozzle 12 is specified by the positioning observation camera 13 so that the dry ice fine particles are reliably collided with the unnecessary deposits. Can do.
  • the suction port 16A of the dust collecting unit 16 is disposed in the vicinity of the distal end portion 12A of the liquefied carbon dioxide gas injection nozzle 12, unnecessary deposits peeled off from the correction substrate 5 Can be reliably captured and recovered without diffusing.
  • FIG. 2 is a flowchart of the cleaning method in the present embodiment.
  • the correction observation substrate 5 is observed with the positioning observation camera 13 as an observation unit, and the position of the unnecessary deposit is specified (step S1).
  • step S2 alignment is performed so that the outlet of the tip 12A of the liquefied carbon dioxide injection nozzle 12 as the liquefied carbon dioxide injection section is in the vicinity of the unnecessary deposit (step S2).
  • the liquefied carbon dioxide gas is mixed from the liquefied carbon dioxide jet nozzle 12 with clean dry air as an auxiliary gas and jetted, and suction is performed by the dust collecting unit 16, and unnecessary deposits peeled off from the correction substrate 5. Is sucked (step S3).
  • step S4 it is observed by the positioning observation camera 13 as an observation unit and moved so that the tip 12A of the liquefied carbon dioxide gas injection nozzle 12 corresponds to other unnecessary deposits. Thereafter, the above steps S1 to S4 may be repeated.
  • the wiring correction device 1 includes a wiring correction device main body 3 and the cleaning device 2 described above.
  • the wiring correction device main body 3 includes a source gas unit 20 that supplies a source gas for laser CVD processing, and an optical system 21.
  • the optical system 21 performs ZAPPING processing (hereinafter referred to as ZAP processing) in which a wiring pattern is cut with a laser beam, and laser CVD processing in which film connection is performed by film formation by a laser CVD method.
  • ZAP processing ZAPPING processing
  • laser CVD processing in which film connection is performed by film formation by a laser CVD method.
  • the optical system 21 is a CVD laser oscillator as a laser light source that irradiates a wiring formation region on the substrate for correction 5 with a laser to photolyze a source gas supplied from a source gas unit 20.
  • a ZAP laser oscillator 23 as a laser light source for ZAP processing
  • the optical system 21 can switch between laser CVD processing and ZAP processing by switching between the CVD laser oscillator 22 and the ZAP laser oscillator 23.
  • FIG. 3A shows a region where the correction wiring is formed, which has been aligned. In this region, the wirings 5A are disconnected.
  • the source gas is supplied from the source gas unit 20 toward the surface of the correction substrate 5, and at the same time, the CVD laser oscillator 22 is driven to emit the CVD laser.
  • the correction wiring 5B as shown in FIG. 3-2 is formed while scanning the wiring correction device body 3 so as to connect the disconnected wirings 5A shown in FIG. 3-1.
  • unnecessary deposits (metal particles) 5C accumulate around the correction wiring 5B and adhere.
  • step S1 the position is observed with the positioning observation camera 13 of the cleaning device 2, the position of a predetermined formation region of the unnecessary deposit 5C is specified (step S1), and the surface position information and the surface state information are transmitted to the control unit 18. input.
  • the control unit 18 outputs a control signal to the gantry stage drive unit 19 according to the surface position information and the surface state information to drive the gantry stage 4 and align the cleaning device 2 (step S2).
  • the liquefied carbon dioxide gas is mixed with clean dry air and ejected from the liquefied carbon dioxide gas injection nozzle 12, and at the same time, suction is performed by the dust collecting unit 16 to suck unnecessary deposits peeled off from the correction substrate 5 (above-mentioned) Step S3). Then, it is observed with the positioning observation camera 13 and moved so that the tip 12A of the liquefied carbon dioxide gas injection nozzle 12 corresponds to the formation region of the other unnecessary deposits 5C (step S4). By repeating such an operation, as shown in FIG. 3C, the unnecessary deposit 5C can be dry-cleaned.
  • FIG. 4 is a configuration diagram showing an outline of a wiring correction device 1A according to the second embodiment of the present invention.
  • the wiring correction device 1A according to the present embodiment has substantially the same configuration as the wiring correction device 1 according to the first embodiment described above.
  • a different configuration of the wiring correction device 1A according to the present embodiment from the wiring correction device 1 according to the first embodiment is that the liquefied carbon dioxide cylinder 8A is not mounted on the cleaning device body 7.
  • a large liquefied carbon dioxide gas cylinder 8B is disposed outside the device, and a flexible pressure-resistant hose having flexibility in the flow path 9 communicating with the liquefied carbon dioxide gas delivery unit 10 of the cleaning device 2A. 9A is connected.
  • the amount of liquefied carbon dioxide used per time injected from the liquefied carbon dioxide injection nozzle 12 is about 1 g for about 3 seconds.
  • the weight of the liquefied carbon dioxide cylinder 8A when full is 30 kg.
  • the cylinder replacement frequency may be replaced every 30,000 corrections.
  • FIG. 5 is a configuration diagram of a cleaning device 2B, which is a main part of a wiring correction device according to the third embodiment of the present invention.
  • the cleaning device 2B in the present embodiment includes a cooling unit 30 in the cleaning device body 7.
  • the cooling unit 30 is set to cool the flow path 11 between the liquefied carbon dioxide gas delivery unit 10 and the liquefied carbon dioxide gas injection nozzle 12.
  • a Stirling refrigerator that is a regenerative refrigerator is used as the cooling unit 30.
  • the cooling unit 30 is not limited to this, and various cooling means such as a cooling system using a Peltier element can be applied.
  • the cooling unit 30 is connected to the control unit 18 and is driven and controlled by receiving a control signal from the control unit 18.
  • the cooling unit 30 is set so that the temperature can be adjusted based on a control signal from the control unit 18.
  • a valve 31 is provided in the flow path 11 between the cooling unit 30 and the liquefied carbon dioxide injection nozzle 12.
  • various opening / closing means such as an air control valve capable of opening / closing control by air control and an electromagnetic valve can be applied.
  • the valve 31 is connected to the control unit 18 and is controlled to open and close in response to a control signal from the control unit 18.
  • the other configuration of the cleaning device 2B is the same as that of the cleaning device 2A of the second embodiment.
  • the other configuration according to the present embodiment is the same as that of the wiring correction device 1A of the second embodiment.
  • the production efficiency of the dry ice fine particles injected from the liquefied carbon dioxide injection nozzle 12 depends on the temperature of the flow path 11. Normally, the cleaning device 2B is used in a room temperature environment. Therefore, in order to inject the amount of dry ice necessary for cleaning unnecessary deposits adhering to the surface of the correction substrate 5, a predetermined time is required from the start of injection until the flow path 11 cools to some extent. In the present embodiment, since the cooling unit 30 that can cool the flow path 11 in advance is provided, dry ice fine particles can be injected immediately without waiting for a certain time from the start of injection.
  • the particle size of the dry ice fine particles ejected from the liquefied carbon dioxide jet nozzle 12 varies depending on the temperature, flow rate, etc. of the liquefied carbon dioxide reaching the liquefied carbon dioxide jet nozzle 12.
  • the cooling unit 30 can adjust the cooling temperature of the flow path 11 based on a control signal from the control unit 18. For this reason, it is also possible to control the particle size of the dry ice fine particles injected from the liquefied carbon dioxide injection nozzle 12.
  • the particle size of the dry ice fine particles can also be controlled. It becomes possible to cope. Therefore, in this embodiment, for example, either the cooling unit 30 or the valve 31 is controlled or both are combined depending on whether the repair process is performed in any of the ZAP process and the laser CVD process. Can be adjusted to an appropriate detergency.
  • each of the above-described embodiments there is one dust collection unit 16, but a plurality of dust collection units 16 may be arranged.
  • clean dry air is used as the auxiliary gas, but the present invention is not limited to this.
  • the wiring correction device 1 is configured to move in the XY axis direction with respect to the correction substrate 5, but the correction substrate 5 side is XY axis relative to the wiring correction device 1.
  • the structure which moves to a direction may be sufficient.

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Cleaning In General (AREA)

Abstract

A cleaning device provided with: a liquefied carbon dioxide gas jetting nozzle 12 which jets liquefied carbon dioxide gas toward a surface of a substrate to which an unwanted deposit has become attached after a wiring repair process, so as to convert the liquefied carbon dioxide gas into dry ice microparticles by adiabatic expansion; and a positioning observation camera 13 for observing a surface position and a surface state of the substrate with which the dry ice microparticles jetted from the liquefied carbon dioxide gas jetting nozzle 12 collide, thereby making it possible to identify the position of the unwanted deposit with which the dry ice microparticles collide.

Description

洗浄装置、配線修正装置、および洗浄方法Cleaning device, wiring correction device, and cleaning method

 本発明は、洗浄装置、その洗浄装置を備えた配線修正装置、および洗浄方法に関し、さらに詳しくは、基板表面に形成された配線パターンを修正した際に発生した金属粒子などの付着物を除去する技術に関する。 The present invention relates to a cleaning device, a wiring correction device including the cleaning device, and a cleaning method, and more particularly, removes deposits such as metal particles generated when a wiring pattern formed on a substrate surface is corrected. Regarding technology.

 FPD(Flat Panel Display)は、微細な配線パターンが形成された基板を備える。FPDの製造工程において、配線パターンに欠陥がある場合にはリペア処理を行っている。このようなリペア処理を行う装置としては、例えば、特許文献1に開示された加工装置が知られている。リペア処理としては、レーザ光により配線パターンの切断を行う所謂ZAPPING加工(以下、ZAP加工という)や、レーザCVD(Chemical Vapor Deposition)法により成膜を行って配線接続を行う所謂レーザCVDリペア処理(以下、レーザCVD加工という)がある。上記切断リペア処理により金属配線を切断したときには、金属屑が基板上に付着する。レーザCVD加工で金属配線を形成したときには、その金属配線の周辺の基板上に金属粒子が降り積もって付着する。このように基板上に付着した上記の金属屑や金属粒子は、電子回路の絶縁不具合や、後工程のプロセスでの不良や、ディスプレイパネルの表示ムラなどの不具合を招く虞がある。このため、基板上の金属屑や金属粒子を低減または除去することが求められている。これらの金属屑や金属粒子を除去する方法としては、ウェット洗浄で除去する手法がある。 FPD (Flat Panel Display) includes a substrate on which a fine wiring pattern is formed. In the FPD manufacturing process, when the wiring pattern has a defect, a repair process is performed. As an apparatus for performing such repair processing, for example, a processing apparatus disclosed in Patent Document 1 is known. As repair processing, so-called ZAPPING processing (hereinafter referred to as ZAP processing) in which a wiring pattern is cut by a laser beam, or so-called laser CVD repair processing in which wiring connection is performed by film formation by a laser CVD (Chemical Vapor Deposition) method. Hereinafter, it is referred to as laser CVD processing). When the metal wiring is cut by the cutting repair process, metal scraps adhere to the substrate. When metal wiring is formed by laser CVD processing, metal particles accumulate on and adhere to the substrate around the metal wiring. Thus, the above-mentioned metal scraps and metal particles adhering to the substrate may cause problems such as an electronic circuit insulation failure, a defect in a post-process, a display panel non-uniformity, and the like. For this reason, it is required to reduce or remove metal scraps and metal particles on the substrate. As a method of removing these metal scraps and metal particles, there is a method of removing by wet cleaning.

特開2008-112958号公報Japanese Patent Laid-Open No. 2008-112958

 しかしながら、ウェット洗浄では、洗浄液で基板を洗浄した後、例えば、リンス工程、乾燥工程などの多くの工程を伴うため、生産効率を低下させるという問題がある。このウェット洗浄では、金属屑や金属粒子の構成成分に応じて洗浄液を適宜選択する必要がある。加えて、ウェット洗浄では、洗浄液の溶液条件を変える調製や、洗浄液の温度管理が必要であった。そして、ウェット洗浄では、リペア処理によって生じた金属屑や金属粒子が、ZAP加工(切断リペア処理)で形成されたものであるか、またはレーザCVD加工で形成された降り積もりであるかによって、洗浄効果ならびに洗浄結果が異なるという問題もある。上記のリペア処理のうち、特にレーザCVDリペア処理に伴って基板上に降り積もった金属粒子は基板への付着力が強いため、このような金属粒子をウェット洗浄で完全に除去することは困難であった。 However, in wet cleaning, after cleaning the substrate with a cleaning solution, for example, many processes such as a rinsing process and a drying process are involved, so there is a problem that the production efficiency is lowered. In this wet cleaning, it is necessary to select a cleaning liquid as appropriate in accordance with the constituent components of metal scraps and metal particles. In addition, in wet cleaning, preparation for changing the solution conditions of the cleaning liquid and temperature control of the cleaning liquid were necessary. In the wet cleaning, the cleaning effect is determined depending on whether the metal scrap and metal particles generated by the repair process are formed by ZAP processing (cutting repair processing) or are piled up by laser CVD processing. There is also a problem that the cleaning results are different. Among the above-described repair processes, particularly, metal particles that have accumulated on the substrate due to the laser CVD repair process have strong adhesion to the substrate, and thus it is difficult to completely remove such metal particles by wet cleaning. It was.

 本発明は、上記の課題に鑑みてなされたものであって、リペア処理によって基板上に付着した金属屑や金属粒子をウェット洗浄することなく簡単に除去できる、洗浄装置、配線修正装置、および洗浄方法を提供することを目的とする。 The present invention has been made in view of the above-described problems, and is a cleaning device, a wiring correction device, and a cleaning device that can easily remove metal scraps and metal particles adhering to a substrate by a repair process without performing wet cleaning. It aims to provide a method.

 上述した課題を解決し、目的を達成するために、本発明の態様は、配線のリペア処理の後に不要付着物が付着した基板の表面の洗浄装置であって、前記基板の表面に向けて液化炭酸ガスを噴射させて、液化炭酸ガスを断熱膨張によりドライアイス微粒子に変化させる液化炭酸ガス噴射部と、前記液化炭酸ガス噴射部から噴射されたドライアイス微粒子が衝突する前記基板の表面位置および表面状態を観察して前記ドライアイス微粒子が衝突する不要付着物の位置を特定することを可能にする観察部と、を備える。 In order to solve the above-described problems and achieve the object, an aspect of the present invention is a cleaning apparatus for a surface of a substrate on which unnecessary deposits adhere after a wiring repair process, and is liquefied toward the surface of the substrate. A liquefied carbon dioxide gas injection unit that injects carbon dioxide gas to change the liquefied carbon dioxide gas into dry ice fine particles by adiabatic expansion, and a surface position and a surface of the substrate on which the dry ice fine particles injected from the liquefied carbon dioxide gas injection unit collide An observation unit that allows the position of an unnecessary deposit that the dry ice fine particles collide to be identified by observing the state.

 上記態様としては、ドライアイス微粒子が衝突して前記基板から剥離された不要付着物を剥離直後に吸引する集塵部をさらに備えることが好ましい。 As the above-mentioned aspect, it is preferable to further include a dust collecting part that sucks immediately after the unnecessary adhering matter separated from the substrate due to collision with dry ice fine particles.

 上記態様としては、前記観察部からの表面位置情報および表面状態情報に基づいてドライアイス微粒子が不要付着物に衝突するよう前記液化炭酸ガス噴射部の位置制御を行う制御部をさらに備えることが好ましい。 As the above aspect, it is preferable to further include a control unit that performs position control of the liquefied carbon dioxide gas injection unit so that dry ice fine particles collide with unnecessary deposits based on surface position information and surface state information from the observation unit. .

 上記態様としては、前記液化炭酸ガス噴射部と前記観察部と前記集塵部は位置決め機構に搭載され、前記位置決め機構は前記制御部により駆動制御されて、前記液化炭酸ガス噴射部から噴射された前記ドライアイス微粒子が不要付着物に衝突するように位置決めすることが好ましい。 As said aspect, the said liquefied carbon dioxide injection part, the said observation part, and the said dust collection part are mounted in the positioning mechanism, and the said positioning mechanism was drive-controlled by the said control part, and was injected from the said liquefied carbon dioxide injection part It is preferable that the dry ice fine particles are positioned so as to collide with unnecessary deposits.

 上記態様としては、前記液化炭酸ガス噴射部に、液化炭酸ガスとともに噴射される補助気体を供給するエア供給路が連通していることが好ましい。 As the above aspect, it is preferable that an air supply path for supplying auxiliary gas injected together with the liquefied carbon dioxide gas communicates with the liquefied carbon dioxide gas injection unit.

 上記態様としては、前記エア供給路に補助気体を供給するエア供給部を備え、前記制御部は、リペア処理がZAP加工とレーザCVD加工のいずれかの工程で行われたかに応じて、前記エア供給部の送出圧力を変更させることが好ましい。 As the above aspect, an air supply unit that supplies auxiliary gas to the air supply path is provided, and the control unit determines whether the repair process is performed in any one of the ZAP process and the laser CVD process. It is preferable to change the delivery pressure of the supply unit.

 上記態様としては、前記位置決め機構に、前記液化炭酸ガス噴射部に液化炭酸ガスを供給する液化炭酸ガスボンベが液化炭酸ガス噴射部とともに移動可能に搭載されていることが好ましい。 As the above aspect, it is preferable that a liquefied carbon dioxide cylinder for supplying liquefied carbon dioxide gas to the liquefied carbon dioxide injection unit is movably mounted on the positioning mechanism together with the liquefied carbon dioxide injection unit.

 上記態様としては、前記液化炭酸ガス噴射部に屈曲性を有する可動耐圧ホースを介して液化炭酸ガスボンベが接続され、前記液化炭酸ガスボンベは装置外に配置されている構成としてもよい。 As the above aspect, a liquefied carbon dioxide gas cylinder may be connected to the liquefied carbon dioxide gas injection section via a movable pressure-resistant hose having flexibility, and the liquefied carbon dioxide gas cylinder may be arranged outside the apparatus.

 上記態様としては、前記液化炭酸ガス噴射部に液化炭酸ガスを送る流路を冷却する冷却部を備えることが好ましい。 As the above aspect, it is preferable to include a cooling unit that cools the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide injection unit.

 上記態様としては、前記液化炭酸ガス噴射部に液化炭酸ガスを送る流路にバルブを備えることが好ましい。 As the above aspect, it is preferable that a valve is provided in the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide jet section.

 本発明の他の態様は、配線修正装置であって、上記構成の洗浄装置を備え、レーザCVD加工用の原料ガスを供給する原料ガスユニットと、前記基板上の配線形成領域にレーザを照射して前記原料ガスユニットから供給される原料ガスを光分解させるCVD用レーザ発振器と、レーザを照射して前記基板上の前記配線の切断を行うZAP用レーザ発振器と、を備える。 Another aspect of the present invention is a wiring correction device, comprising the cleaning device having the above-described configuration, and a source gas unit for supplying a source gas for laser CVD processing, and a laser on a wiring formation region on the substrate. And a CVD laser oscillator for photolyzing the source gas supplied from the source gas unit, and a ZAP laser oscillator for irradiating a laser to cut the wiring on the substrate.

 本発明の他の態様は、洗浄方法であって、配線のリペア処理後に不要付着物が付着した基板の前記不要付着物の位置を特定し、前記不要付着物の特定した位置に向けて、液化炭酸ガスを噴射させ、液化炭酸ガスを断熱膨張によりドライアイス微粒子に変化させて前記不要付着物に衝突させ、基板から剥離された直後の不要付着物を吸引して排除する。 Another aspect of the present invention is a cleaning method, wherein the position of the unnecessary deposit on the substrate to which the unnecessary deposit has adhered after the wiring repair process is specified, and liquefied toward the identified position of the unnecessary deposit. Carbon dioxide gas is injected, liquefied carbon dioxide gas is changed into dry ice fine particles by adiabatic expansion and collided with the unnecessary deposits, and unnecessary deposits immediately after being peeled off from the substrate are sucked and removed.

 上記態様としては、液化炭酸ガスを、補助気体とともに送り出し、リペア処理がZAP加工とレーザCVD加工のいずれかの工程で行われたかに応じて、補助気体の送出圧力を変更させることが好ましい。 As the above-described aspect, it is preferable that the liquefied carbon dioxide gas is sent out together with the auxiliary gas, and the auxiliary gas delivery pressure is changed depending on whether the repair process is performed in any one of the ZAP processing and the laser CVD processing.

 本発明によれば、リペア処理によって基板上に付着した金属屑や金属粒子などの不要付着物(降り積もり)をウェット洗浄することなく簡単に除去できる。本発明によれば、気体噴射だけでは洗浄できない不要付着物を確実に除去できる。このため、本発明によれば、例えば、FPDの生産効率を向上できる。本発明によれば、リペア処理に伴って基板に付着した金属屑や金属粒子などの不要付着物を確実に除去できるため、電子回路の絶縁不具合や、後工程のプロセスでの不良や、例えば、ディスプレイパネルの表示ムラなどの不具合などの発生を防止できる。特に、本発明によれば、液化炭酸ガス噴射部から噴射する位置を観察部で特定することで、ドライアイス微粒子を不要付着物に確実に衝突させることができる。また、本発明によれば、例えば、リペア処理がZAP加工とレーザCVD加工のいずれであっても不要付着物を簡単に除去することができる。 According to the present invention, unnecessary deposits (falling piles) such as metal debris and metal particles adhering to the substrate by the repair process can be easily removed without wet cleaning. According to the present invention, it is possible to reliably remove unnecessary deposits that cannot be cleaned only by gas injection. For this reason, according to the present invention, for example, the production efficiency of FPD can be improved. According to the present invention, it is possible to reliably remove unnecessary deposits such as metal debris and metal particles attached to the substrate along with the repair process, so that an insulation failure of the electronic circuit, a defect in a subsequent process, for example, Occurrence of problems such as display unevenness of the display panel can be prevented. In particular, according to the present invention, it is possible to reliably cause the dry ice fine particles to collide with unnecessary deposits by specifying the position to be ejected from the liquefied carbon dioxide gas ejecting section by the observation section. Further, according to the present invention, for example, unnecessary deposits can be easily removed regardless of whether the repair process is ZAP processing or laser CVD processing.

 本発明においては、ドライアイス微粒子が衝突して基板から剥離された不要付着物を剥離直後に吸引する集塵部を備えることにより、基板から剥離した不要付着物を拡散させることなく回収することができる。このため、本発明によれば、洗浄処理後に基板をウェット洗浄する必要がなく、洗浄工程の時間を大幅に短縮できる。 In the present invention, by providing a dust collecting part that sucks out the unnecessary deposits that have been peeled off from the substrate due to the collision of dry ice fine particles, the unnecessary deposits that have been peeled off from the substrate can be recovered without being diffused. it can. Therefore, according to the present invention, it is not necessary to wet-clean the substrate after the cleaning process, and the time for the cleaning process can be greatly shortened.

 本発明においては、観察部からの表面位置情報および表面状態情報に基づいてドライアイス微粒子が不要付着物に衝突するよう液化炭酸ガス噴射部の位置制御を行う制御部を備えることにより、ドライアイス微粒子を不要付着物に確実に衝突させることができ、洗浄時間を短縮することができる。 In the present invention, the dry ice fine particles are provided by including a control unit that controls the position of the liquefied carbon dioxide gas injection unit so that the dry ice fine particles collide with the unnecessary deposit based on the surface position information and the surface state information from the observation unit. Can reliably collide with unnecessary deposits, and the cleaning time can be shortened.

 本発明においては、液化炭酸ガス噴射部と観察部と集塵部が位置決め機構に搭載され、位置決め機構は制御部により駆動制御されて、液化炭酸ガス噴射部から噴射されたドライアイス微粒子が不要付着物に衝突するように位置決めされるため、効率的に洗浄工程を行える。本発明では、集塵部を備えているため、基板から剥離した付着物を拡散させることなく回収することができる。 In the present invention, the liquefied carbon dioxide injection unit, the observation unit, and the dust collecting unit are mounted on the positioning mechanism, and the positioning mechanism is driven and controlled by the control unit, so that the dry ice fine particles injected from the liquefied carbon dioxide injection unit are unnecessary. Since it positions so that it may collide with a kimono, a washing | cleaning process can be performed efficiently. In this invention, since the dust collection part is provided, the deposit | attachment peeled off from the board | substrate can be collect | recovered, without diffusing.

 本発明においては、液化炭酸ガス噴射部に、液化炭酸ガスとともに噴射される補助気体を供給するエア供給路が連通するように設けられている。したがって、本発明では、液化炭酸ガス(ドライアイス微粒子)を含む補助気体(例えば、クリーンドライエア)の吹き出し強度を調整することが可能である。したがって、補助気体の送出圧力を制御することにより、ドライアイス微粒子による洗浄性能を調整・制御できる。 In the present invention, the liquefied carbon dioxide gas injection unit is provided with an air supply path for supplying auxiliary gas injected together with the liquefied carbon dioxide gas. Therefore, in the present invention, it is possible to adjust the blowing strength of an auxiliary gas (for example, clean dry air) containing liquefied carbon dioxide gas (dry ice fine particles). Therefore, the cleaning performance by the dry ice fine particles can be adjusted and controlled by controlling the delivery pressure of the auxiliary gas.

 本発明においては、エア供給路に補助気体を供給するエア供給部を備え、制御部が、リペア処理がZAP加工とレーザCVD加工のいずれかの工程で行われたかに応じて、エア供給部の送出圧力を変更させることにより、洗浄箇所の状態に応じて確実な洗浄ができる。また、本発明によれば、液化炭酸ガスの無駄な消費を抑えて基板洗浄を低コストで行える。 In the present invention, an air supply unit that supplies auxiliary gas to the air supply path is provided, and the control unit determines whether the repair process is performed in any one of the ZAP processing and the laser CVD processing. By changing the delivery pressure, reliable cleaning can be performed according to the state of the cleaning part. Further, according to the present invention, it is possible to perform substrate cleaning at low cost while suppressing wasteful consumption of liquefied carbon dioxide gas.

 本発明においては、位置決め機構に対して、液化炭酸ガス噴射部に液化炭酸ガスを供給する液化炭酸ガスボンベが液化炭酸ガス噴射部とともに移動可能に搭載されていてもよいし、液化炭酸ガス噴射部に屈曲性を有する可動耐圧ホースを介して装置外に配置された液化炭酸ガスボンベが接続される構成としてもよい。したがって、本発明によれば、洗浄装置を使用する場所や洗浄する基板の大きさなどに応じて適切な洗浄を行える。 In the present invention, a liquefied carbon dioxide gas cylinder that supplies liquefied carbon dioxide gas to the liquefied carbon dioxide gas injection unit may be mounted on the positioning mechanism so as to be movable together with the liquefied carbon dioxide gas injection unit. It is good also as a structure to which the liquefied carbon dioxide gas cylinder arrange | positioned outside the apparatus is connected via the movable pressure | voltage resistant hose which has flexibility. Therefore, according to the present invention, appropriate cleaning can be performed according to the place where the cleaning apparatus is used, the size of the substrate to be cleaned, and the like.

 本発明においては、液化炭酸ガス噴射部に液化炭酸ガスを送る流路を冷却する冷却部を備えることにより、液化炭酸ガス噴射部へ供給する液化炭酸ガスの温度を低温に維持することができる。すなわち、本発明によれば、液化炭酸ガス噴射部に供給される液化炭酸ガスの温度が、断熱膨張によりドライアイス微粒子に変化し易い温度に設定できる。したがって、本発明によれば、液化炭酸ガス噴射部から液化炭酸ガスの噴射を開始してから適量のドライアイス微粒子が噴射されるまでの待ち時間を省略することができる。したがって、本発明によれば、洗浄工程の作業時間を短縮でき、常に噴射量の適切なドライアイス微粒子の噴射を可能とする。また、本発明によれば、冷却部により液化炭酸ガス噴射部に液化炭酸ガスを送る流路の温度を変更させることにより、液化炭酸ガス噴射部から噴射されるドライアイス微粒子の粒径を制御することができる。したがって、本発明によれば、基板上の不要付着物の種類、付着状態などに応じてドライアイス微粒子の粒径を制御して、不要付着物を効率よく除去することができる。 In the present invention, the temperature of the liquefied carbon dioxide supplied to the liquefied carbon dioxide injection section can be maintained at a low temperature by providing the cooling section for cooling the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide injection section. That is, according to the present invention, the temperature of the liquefied carbon dioxide gas supplied to the liquefied carbon dioxide gas injection unit can be set to a temperature at which it is easily changed to dry ice fine particles by adiabatic expansion. Therefore, according to the present invention, it is possible to omit the waiting time from the start of the injection of the liquefied carbon dioxide gas from the liquefied carbon dioxide injection unit to the injection of an appropriate amount of dry ice fine particles. Therefore, according to the present invention, the working time of the cleaning process can be shortened, and it is possible to always inject dry ice fine particles having an appropriate injection amount. Further, according to the present invention, the particle size of the dry ice fine particles injected from the liquefied carbon dioxide injection unit is controlled by changing the temperature of the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide injection unit by the cooling unit. be able to. Therefore, according to the present invention, it is possible to efficiently remove unwanted deposits by controlling the particle size of the dry ice fine particles in accordance with the type and deposit state of unwanted deposits on the substrate.

 本発明においては、液化炭酸ガス噴射部に液化炭酸ガスを送る流路にバルブを備えることにより、液化炭酸ガスの送出量を調整できる。したがって、本発明によれば、バルブにより液化炭酸ガスの送出量を制御することにより、ドライアイス微粒子による洗浄性能を調整・制御できる。また、本発明によれば、待機時にバルブを閉じることにより液化炭酸ガス噴射部から液化炭酸ガスの流出を防止できる。 In the present invention, the delivery amount of liquefied carbon dioxide can be adjusted by providing a valve in the flow path for sending liquefied carbon dioxide to the liquefied carbon dioxide jet. Therefore, according to the present invention, the cleaning performance with dry ice fine particles can be adjusted and controlled by controlling the amount of liquefied carbon dioxide delivered by the valve. Moreover, according to this invention, the outflow of liquefied carbon dioxide from a liquefied carbon dioxide injection part can be prevented by closing a valve at the time of standby.

 本発明によれば、上記の洗浄装置を備え、レーザCVD加工用の原料ガスを供給する原料ガスユニットと、前記基板上の配線形成領域にレーザを照射して前記原料ガスユニットから供給される原料ガスを光分解させるCVD用レーザ発振器と、レーザを照射して基板上の配線パターンの切断を行うZAP用レーザ発振器と、を備える配線修正装置とすることにより、基板を移動させることや、装置交換をすることなど行うことなく、配線の修正工程の後に、すぐに洗浄工程を施すことができる。したがって、本発明によれば、配線修正作業および洗浄作業の作業時間を大幅に短縮できる。 According to the present invention, a raw material gas unit including the above-described cleaning device and supplying a raw material gas for laser CVD processing, and a raw material supplied from the raw material gas unit by irradiating a wiring formation region on the substrate with a laser beam Moving the substrate or replacing the device by using a wiring correction device comprising a CVD laser oscillator for photolysis of gas and a ZAP laser oscillator for irradiating a laser to cut the wiring pattern on the substrate The cleaning process can be performed immediately after the wiring correction process without performing the above process. Therefore, according to the present invention, the work time for the wiring correction work and the cleaning work can be greatly shortened.

 本発明によれば、配線のリペア処理後に不要付着物が付着した基板の不要付着物の位置を特定し、不要付着物の前記位置に向けて、液化炭酸ガスを噴射させ、液化炭酸ガスを断熱膨張によりドライアイス微粒子に変化させて不要付着物に衝突させ、不要付着物を基板から剥離された直後の不要付着物を吸引して排除することにより、気体噴射だけでは洗浄できない不要付着物を確実に除去できる。このため、本発明によれば、FPDの生産効率を向上できる。本発明によれば、リペア処理に伴って基板に付着した金属屑や金属粒子などの不要付着物を確実に除去できるため、電子回路の絶縁不具合や、後工程のプロセスでの不良や、例えば、ディスプレイパネルの表示ムラなどの不具合などの発生を防止できる。特に、本発明によれば、液化炭酸ガス噴射部から噴射する位置を観察部で特定することで、ドライアイス微粒子を不要付着物に確実に衝突させることができる。さらに、本発明によれば、例えば、リペア処理がZAP加工とレーザCVD加工のいずれであっても不要付着物を簡単に除去することができる。 According to the present invention, the position of the unnecessary deposit on the substrate to which the unnecessary deposit has adhered after the wiring repair process is specified, and the liquefied carbon dioxide gas is sprayed toward the position of the unwanted deposit to insulate the liquefied carbon dioxide. By transforming into dry ice particulates by expansion and colliding with unwanted deposits, the unwanted deposits that have just been peeled off from the substrate are sucked out and removed to ensure that unwanted deposits that cannot be cleaned only by gas injection Can be removed. For this reason, according to this invention, the production efficiency of FPD can be improved. According to the present invention, it is possible to reliably remove unnecessary deposits such as metal debris and metal particles attached to the substrate along with the repair process, so that an insulation failure of the electronic circuit, a defect in a subsequent process, for example, Occurrence of problems such as display unevenness of the display panel can be prevented. In particular, according to the present invention, it is possible to reliably cause the dry ice fine particles to collide with unnecessary deposits by specifying the position to be ejected from the liquefied carbon dioxide gas ejecting section by the observation section. Furthermore, according to the present invention, for example, unnecessary deposits can be easily removed regardless of whether the repair process is ZAP processing or laser CVD processing.

図1は、本発明の第1の実施の形態に係る配線修正装置の概略を示す構成図である。FIG. 1 is a configuration diagram showing an outline of a wiring correction device according to a first embodiment of the present invention. 図2は、本発明の第1の実施の形態に係る洗浄方法を示すフローチャートである。FIG. 2 is a flowchart showing a cleaning method according to the first embodiment of the present invention. 図3-1は、本発明の第1の実施の形態に係る配線修正装置を用いてレーザCVDリペア処理を行う配線欠陥を有する基板を示す平面説明図である。FIG. 3A is an explanatory plan view showing a substrate having a wiring defect for performing a laser CVD repair process using the wiring correction apparatus according to the first embodiment of the present invention. 図3-2は、本発明の第1の実施の形態に係る配線修正装置を用いてレーザCVDリペア処理を行った状態を示す基板の平面説明図である。FIG. 3-2 is a plan view of the substrate showing a state where the laser CVD repair process is performed using the wiring correction apparatus according to the first embodiment of the present invention. 図3-3は、本発明の第1の実施の形態に係る配線修正装置における洗浄装置を用いて不要付着物の洗浄を施した状態を示す基板の平面説明図である。FIG. 3-3 is a plan view of the substrate showing a state in which unnecessary deposits are cleaned using the cleaning device in the wiring correction device according to the first embodiment of the present invention. 図4は、本発明の第2の実施の形態に係る配線修正装置の概略を示す構成図である。FIG. 4 is a configuration diagram showing an outline of a wiring correction apparatus according to the second embodiment of the present invention. 図5は、本発明の第3の実施の形態に係る配線修正装置の要部である洗浄装置の構成図である。FIG. 5 is a configuration diagram of a cleaning device that is a main part of a wiring correction device according to a third embodiment of the present invention.

 以下に、本発明の実施の形態に係る洗浄装置、配線修正装置、および洗浄方法の詳細を図面に基づいて説明する。但し、図面は模式的なものであり、各部材の寸法や寸法の比率や形状などは現実のものと異なることに留意すべきである。また、図面相互間においても互いの寸法の関係や比率や形状が異なる部分が含まれている。 Hereinafter, details of the cleaning device, the wiring correction device, and the cleaning method according to the embodiment of the present invention will be described with reference to the drawings. However, it should be noted that the drawings are schematic, and the dimensions, ratios and shapes of the members are different from actual ones. In addition, the drawings include portions having different dimensional relationships, ratios, and shapes.

[第1の実施の形態]
 図1は、本発明の第1の実施の形態に係る配線修正装置1を示している。この配線修正装置1は、洗浄装置2と、配線修正装置本体3と、を備えている。
(洗浄装置)
 図1に示すように、洗浄装置2は、位置決め機構としてガントリステージ4に搭載されている。このガントリステージ4は、図示しない基台の上に搭載され、この基台の上に、修正用基板5を配置するテーブル6が設けられている。この修正用基板5は、配線修正装置本体3を用いて配線修正を行う対象物であり、例えば、液晶表示装置などの表示デバイスを構成するTFT基板や、半導体基板などを適用できる。
[First Embodiment]
FIG. 1 shows a wiring correction device 1 according to a first embodiment of the present invention. The wiring correction device 1 includes a cleaning device 2 and a wiring correction device main body 3.
(Cleaning device)
As shown in FIG. 1, the cleaning device 2 is mounted on a gantry stage 4 as a positioning mechanism. The gantry stage 4 is mounted on a base (not shown), and a table 6 on which a correction substrate 5 is arranged is provided on the base. The correction substrate 5 is a target for correcting the wiring using the wiring correction device main body 3. For example, a TFT substrate constituting a display device such as a liquid crystal display device, a semiconductor substrate, or the like can be applied.

 洗浄装置2は、洗浄装置本体7と、この洗浄装置本体7内に内蔵された液化炭酸ガスボンベ8Aと、この液化炭酸ガスボンベ8Aに流路9を介して接続された液化炭酸ガス送出部10と、この液化炭酸ガス送出部10に流路11を介して接続された液化炭酸ガス噴射部としての液化炭酸ガス噴射ノズル12と、観察部としての位置決め用観察カメラ13と、液化炭酸ガス噴射ノズル12に連通するエア供給路14と、このエア供給路14に補助気体としてのクリーンドライエア(CDA)を供給するエア供給部としてのCDA供給部15と、集塵部16と、この集塵部16に連通するエア排出路17と、制御部18と、を備える。なお、本実施の形態では、補助気体としてクリーンドライエア(CDA)を用いたが、窒素ガスを用いてもよい。 The cleaning device 2 includes a cleaning device main body 7, a liquefied carbon dioxide gas cylinder 8A built in the cleaning device main body 7, a liquefied carbon dioxide gas delivery unit 10 connected to the liquefied carbon dioxide gas cylinder 8A via a flow path 9, A liquefied carbon dioxide injection nozzle 12 as a liquefied carbon dioxide injection section connected to the liquefied carbon dioxide delivery section 10 via a flow path 11, a positioning observation camera 13 as an observation section, and a liquefied carbon dioxide injection nozzle 12 An air supply path 14 that communicates, a CDA supply section 15 as an air supply section that supplies clean air (CDA) as an auxiliary gas to the air supply path 14, a dust collection section 16, and a dust collection section 16 that communicates with each other The air discharge path 17 and the control unit 18 are provided. In this embodiment, clean dry air (CDA) is used as the auxiliary gas, but nitrogen gas may be used.

 図1に示すように、液化炭酸ガス噴射ノズル12は、洗浄装置本体7の下部に設けられ、テーブル6に配置された修正用基板5に向けて斜め下方に突出している。位置決め用観察カメラ13は、この液化炭酸ガス噴射ノズル12の突出した先端部12Aの上方に配置されている。また、液化炭酸ガス噴射ノズル12の先端部12Aの近傍には、集塵部16の吸引口16Aが配置されている。 As shown in FIG. 1, the liquefied carbon dioxide injection nozzle 12 is provided at the lower part of the cleaning apparatus body 7 and protrudes obliquely downward toward the correction substrate 5 disposed on the table 6. The positioning observation camera 13 is disposed above the protruding tip portion 12A of the liquefied carbon dioxide gas injection nozzle 12. Further, a suction port 16 </ b> A of the dust collecting unit 16 is disposed in the vicinity of the tip end portion 12 </ b> A of the liquefied carbon dioxide gas injection nozzle 12.

 液化炭酸ガス噴射ノズル12は、修正用基板5上の配線5Aのリペア処理後に、この配線5Aの近傍に付着した降り積もり(以下、不要付着物という)が存在する修正用基板5の表面に向けて液化炭酸ガスを噴射させる。液化炭酸ガス噴射ノズル12から噴射された液化炭酸ガスは、噴射直後に断熱膨張によりドライアイス微粒子に変化する。 The liquefied carbon dioxide spray nozzle 12 is directed toward the surface of the correction substrate 5 where there is a piled up deposit (hereinafter referred to as unnecessary deposits) adhering to the vicinity of the wiring 5A after the repair processing of the wiring 5A on the correction substrate 5. Inject liquefied carbon dioxide. The liquefied carbon dioxide injected from the liquefied carbon dioxide injection nozzle 12 changes into dry ice fine particles by adiabatic expansion immediately after the injection.

 位置決め用観察カメラ13は、液化炭酸ガス噴射ノズル12から噴射されたドライアイス微粒子が衝突する修正用基板5の表面位置および表面状態を観察してドライアイス微粒子が衝突する不要付着物の位置を特定することを可能にする。 The positioning observation camera 13 observes the surface position and surface state of the correction substrate 5 on which the dry ice fine particles ejected from the liquefied carbon dioxide gas injection nozzle 12 collide, and identifies the position of unnecessary deposits on which the dry ice fine particles collide. Make it possible to do.

 なお、本実施の形態では、ドライアイス微粒子の粒径を、約30μmに調整したが、5~200μmに調整することが可能である。このような粒径は、ドライアイスの塊を粉砕して用いる場合に比較して大幅に小さく、液化炭酸ガス噴射ノズル12の内径をミクロンオーダに設定することを可能にしている。また、ドライアイス微粒子が不要付着物に衝突する圧力は、0.1~1MPaに調整することができる。 In this embodiment, the particle size of the dry ice fine particles is adjusted to about 30 μm, but can be adjusted to 5 to 200 μm. Such a particle size is significantly smaller than that when a dry ice lump is pulverized and used, and the inner diameter of the liquefied carbon dioxide gas injection nozzle 12 can be set to the order of microns. Further, the pressure at which the dry ice fine particles collide with the unnecessary deposits can be adjusted to 0.1 to 1 MPa.

 集塵部16は、ドライアイス微粒子が衝突して修正用基板5から剥離された不要付着物を剥離直後に吸引する。制御部18は、本来、配線修正装置本体3に備えられたものであり、位置決め用観察カメラ13からの表面位置情報および表面状態情報に基づいてドライアイス微粒子が不要付着物に衝突するよう液化炭酸ガス噴射ノズル12の位置制御を行うように設定されている。 The dust collecting unit 16 sucks the unnecessary deposits separated from the correction substrate 5 due to the collision of the dry ice fine particles immediately after peeling. The control unit 18 is originally provided in the wiring correction device main body 3 and is liquefied carbonic acid so that dry ice fine particles collide with unnecessary deposits based on surface position information and surface state information from the observation camera 13 for positioning. The position of the gas injection nozzle 12 is set to be controlled.

 液化炭酸ガス噴射ノズル12と位置決め用観察カメラ13と集塵部16とを含む洗浄装置本体7は、ガントリステージ4に搭載されている。ガントリステージ4は、ガントリステージ駆動部19により駆動される。ガントリステージ駆動部19は、制御部18により駆動制御される。このようにガントリステージ4を駆動制御することにより、液化炭酸ガス噴射ノズル12から噴射されたドライアイス微粒子が位置決め用観察カメラ13で捉えられた不要付着物に衝突するように正確に位置決めすることができる。 The cleaning device main body 7 including the liquefied carbon dioxide spray nozzle 12, the positioning observation camera 13, and the dust collecting unit 16 is mounted on the gantry stage 4. The gantry stage 4 is driven by a gantry stage drive unit 19. The gantry stage drive unit 19 is driven and controlled by the control unit 18. By driving and controlling the gantry stage 4 in this way, it is possible to accurately position the dry ice fine particles ejected from the liquefied carbon dioxide gas ejection nozzle 12 so as to collide with unnecessary deposits captured by the positioning observation camera 13. it can.

 本実施の形態では、液化炭酸ガス噴射ノズル12に、液化炭酸ガスとともに噴射される補助気体としてクリーンドライエアを供給するCDA供給部15がエア供給路14を介して連通している。制御部18は、このCDA供給部15のクリーンドライエアのエア送出圧力を制御する。このため、本実施の形態では、液化炭酸ガス噴射ノズル12から噴射されるドライアイス微粒子を含むエアの吹き出し強度を調整することができる。加えて、液化炭酸ガス送出部10の液化炭酸ガス送出圧力を制御するようにしてもよい。 In the present embodiment, a CDA supply unit 15 for supplying clean dry air as an auxiliary gas to be injected together with the liquefied carbon dioxide gas is communicated with the liquefied carbon dioxide injection nozzle 12 via the air supply path 14. The control unit 18 controls the air delivery pressure of clean dry air of the CDA supply unit 15. For this reason, in this Embodiment, the blowing intensity | strength of the air containing the dry ice fine particles injected from the liquefied carbon dioxide injection nozzle 12 can be adjusted. In addition, the liquefied carbon dioxide delivery pressure of the liquefied carbon dioxide delivery unit 10 may be controlled.

 なお、制御部18は、配線修正装置本体3で行う後述するリペア処理がZAP加工(切断リペア処理)とレーザCVD加工(レーザCVDリペア処理)のいずれかの工程で行われたかに応じて、CDA供給部15の送出圧力を変更させることができる。なお、レーザCVD加工によって生成された不要付着物を除去できる液化炭酸ガス送出圧力に設定しておけば、ZAP加工によって生成された金属屑は容易に洗浄することが可能であるため、液化炭酸ガスの送出圧力を変更しなくてもよい。 Note that the control unit 18 performs CDA depending on whether a repair process (to be described later) performed in the wiring correction device body 3 is performed in any one of the ZAP process (cutting repair process) and the laser CVD process (laser CVD repair process). The delivery pressure of the supply unit 15 can be changed. In addition, if it sets to the liquefied carbon dioxide gas delivery pressure which can remove the unnecessary deposit produced | generated by laser CVD processing, since the metal waste produced | generated by ZAP processing can be wash | cleaned easily, liquefied carbon dioxide gas It is not necessary to change the delivery pressure.

 本実施の形態では、液化炭酸ガス噴射ノズル12から噴射される一回あたりの液化炭酸ガス使用量は約3秒間で1g程度である。また、液化炭酸ガスボンベ8Aの重量は、5kgであり、ボンベ径寸法はφ140×570mmである。液化炭酸ガスボンベ8Aの満タン時の重量は、14kg(内部圧力7MPa)である。ボンベ交換頻度は、修正回数10,000回毎に交換すればよい。 In the present embodiment, the amount of liquefied carbon dioxide used per time jetted from the liquefied carbon dioxide jet nozzle 12 is about 1 g for about 3 seconds. The weight of the liquefied carbon dioxide cylinder 8A is 5 kg, and the cylinder diameter is φ140 × 570 mm. The weight of the liquefied carbon dioxide cylinder 8A when full is 14 kg (internal pressure 7 MPa). The cylinder replacement frequency may be replaced every 10,000 corrections.

 本実施の形態に係る洗浄装置2によれば、配線修正装置本体3で行ったリペア処理によって修正用基板5上に付着した金属屑や金属粒子などの不要付着物を簡単かつ正確にドライ洗浄することができる。特に、この洗浄装置2によれば、後述するレーザCVD加工によって生じた、修正用基板5への付着力が大きい不要付着物を確実に除去できる。 According to the cleaning device 2 according to the present embodiment, unnecessary and foreign deposits such as metal debris and metal particles attached on the correction substrate 5 by the repair process performed in the wiring correction device main body 3 are easily and accurately dry-cleaned. be able to. In particular, according to the cleaning device 2, it is possible to reliably remove unnecessary deposits having a large adhesion force to the correction substrate 5 caused by laser CVD processing described later.

 本実施の形態に係る洗浄装置2によれば、例えば、TFT基板などを備えるFPDの生産効率を向上できる。また、リペア処理に伴って修正用基板5に付着した不要付着物を確実に除去できるため、電子回路の絶縁不具合や、後工程のプロセスでの不良や、例えば、ディスプレイパネルの表示ムラなどの不具合などの発生を防止できる。 According to the cleaning apparatus 2 according to the present embodiment, for example, the production efficiency of an FPD including a TFT substrate can be improved. In addition, since unnecessary deposits attached to the correction substrate 5 along with the repair process can be surely removed, an insulation failure of an electronic circuit, a defect in a later process, a defect such as a display unevenness of a display panel, for example Can be prevented.

 特に、本実施の形態に係る洗浄装置2によれば、液化炭酸ガス噴射ノズル12から噴射する位置を位置決め用観察カメラ13で特定することで、ドライアイス微粒子を不要付着物に確実に衝突させることができる。 In particular, according to the cleaning apparatus 2 according to the present embodiment, the position to be sprayed from the liquefied carbon dioxide spray nozzle 12 is specified by the positioning observation camera 13 so that the dry ice fine particles are reliably collided with the unnecessary deposits. Can do.

 本実施の形態に係る洗浄装置2によれば、液化炭酸ガス噴射ノズル12の先端部12A近傍に集塵部16の吸引口16Aが配置されているため、修正用基板5から剥離した不要付着物を拡散させることなく確実に捕捉して回収することができる。 According to the cleaning device 2 according to the present embodiment, since the suction port 16A of the dust collecting unit 16 is disposed in the vicinity of the distal end portion 12A of the liquefied carbon dioxide gas injection nozzle 12, unnecessary deposits peeled off from the correction substrate 5 Can be reliably captured and recovered without diffusing.

(洗浄方法)
 図2は、本実施の形態における洗浄方法のフローチャートである。この洗浄方法では、まず観察部としての位置決め用観察カメラ13で修正用基板5上を観察して、不要付着物の位置を特定する(ステップS1)。
(Cleaning method)
FIG. 2 is a flowchart of the cleaning method in the present embodiment. In this cleaning method, first, the correction observation substrate 5 is observed with the positioning observation camera 13 as an observation unit, and the position of the unnecessary deposit is specified (step S1).

 次に、液化炭酸ガス噴射部としての液化炭酸ガス噴射ノズル12の先端部12Aの吹き出し口が不要付着物の近傍位置にあるように位置合わせする(ステップS2)。 Next, alignment is performed so that the outlet of the tip 12A of the liquefied carbon dioxide injection nozzle 12 as the liquefied carbon dioxide injection section is in the vicinity of the unnecessary deposit (step S2).

 次に、液化炭酸ガス噴射ノズル12から液化炭酸ガスを、補助気体としてのクリーンドライエアと混合して噴射させるとともに、集塵部16で吸引を行って、修正用基板5から剥離された不要付着物を吸引する(ステップS3)。 Next, the liquefied carbon dioxide gas is mixed from the liquefied carbon dioxide jet nozzle 12 with clean dry air as an auxiliary gas and jetted, and suction is performed by the dust collecting unit 16, and unnecessary deposits peeled off from the correction substrate 5. Is sucked (step S3).

 次に、観察部としての位置決め用観察カメラ13で観察して他の不要付着物に液化炭酸ガス噴射ノズル12の先端部12Aが対応するように移動させる(ステップS4)。その後は、上記のステップS1~S4の工程を繰り返せばよい。 Next, it is observed by the positioning observation camera 13 as an observation unit and moved so that the tip 12A of the liquefied carbon dioxide gas injection nozzle 12 corresponds to other unnecessary deposits (step S4). Thereafter, the above steps S1 to S4 may be repeated.

(配線修正装置)
 図1に示すように、配線修正装置1は、配線修正装置本体3と、上述した洗浄装置2と、を備える。配線修正装置本体3は、レーザCVD加工用の原料ガスを供給する原料ガスユニット20と、光学系21と、を備える。
(Wiring correction device)
As shown in FIG. 1, the wiring correction device 1 includes a wiring correction device main body 3 and the cleaning device 2 described above. The wiring correction device main body 3 includes a source gas unit 20 that supplies a source gas for laser CVD processing, and an optical system 21.

 光学系21は、レーザ光により配線パターンの切断を行うZAPPING加工(以下、ZAP加工という)や、レーザCVD法により成膜を行って配線接続を行うレーザCVD加工を行う。 The optical system 21 performs ZAPPING processing (hereinafter referred to as ZAP processing) in which a wiring pattern is cut with a laser beam, and laser CVD processing in which film connection is performed by film formation by a laser CVD method.

 図1に示すように、光学系21は、修正用基板5基板上の配線形成領域にレーザを照射して原料ガスユニット20から供給される原料ガスを光分解させるレーザ光源としてのCVD用レーザ発振器22と、ZAP加工用レーザ光源としてのZAP用レーザ発振器23と、アッテネータ24と、スリット25と、レーザ照射領域を観察するカメラ26と、オートフォーカスユニット27と、照明28と、を備えている。光学系21は、CVD用レーザ発振器22とZAP用レーザ発振器23を切り替えることにより、レーザCVD加工とZAP加工とを切り替えて行うことができる。 As shown in FIG. 1, the optical system 21 is a CVD laser oscillator as a laser light source that irradiates a wiring formation region on the substrate for correction 5 with a laser to photolyze a source gas supplied from a source gas unit 20. 22, a ZAP laser oscillator 23 as a laser light source for ZAP processing, an attenuator 24, a slit 25, a camera 26 for observing a laser irradiation region, an autofocus unit 27, and an illumination 28. The optical system 21 can switch between laser CVD processing and ZAP processing by switching between the CVD laser oscillator 22 and the ZAP laser oscillator 23.

(レーザCVD加工および洗浄操作)
 次に、配線修正装置本体3を用いて、レーザCVD加工を行った後、修正用基板5の表面に付着した不要付着物(金属粒子)を洗浄装置2で洗浄する場合の操作について、図1、図2および図3-1から図3-3を用いて説明する。
(Laser CVD processing and cleaning operation)
Next, an operation in the case where unnecessary deposits (metal particles) adhering to the surface of the correction substrate 5 are cleaned by the cleaning device 2 after performing the laser CVD processing using the wiring correction device main body 3 will be described with reference to FIG. This will be described with reference to FIG. 2 and FIGS. 3-1 to 3-3.

 図1に示すように、カメラ26で位置観察を行って、修正配線を形成する位置を特定し、制御部18によりガントリステージ駆動部19を制御することによりガントリステージ4を駆動させて位置合わせを行う。なお、図3-1は、位置合わせが行われた、修正配線を形成する領域を示している。この領域では、配線5A同士が断線している。 As shown in FIG. 1, the position observation is performed by the camera 26, the position where the correction wiring is formed is specified, and the control unit 18 controls the gantry stage drive unit 19 to drive the gantry stage 4 to perform alignment. Do. FIG. 3A shows a region where the correction wiring is formed, which has been aligned. In this region, the wirings 5A are disconnected.

 次に、原料ガスユニット20から原料ガスを修正用基板5の表面へ向けて供給し、同時にCVD用レーザ発振器22を駆動してCVD用レーザを出射させる。そして、図3-1に示す断線した配線5A同士を接続するように配線修正装置本体3を走査させながら図3-2に示すような修正配線5Bを形成する。このようなレーザCVD加工によるリペア処理に際して、図3-2に示すように、修正配線5Bの周辺に不要付着物(金属粒子)5Cが降り積もって付着する。 Next, the source gas is supplied from the source gas unit 20 toward the surface of the correction substrate 5, and at the same time, the CVD laser oscillator 22 is driven to emit the CVD laser. Then, the correction wiring 5B as shown in FIG. 3-2 is formed while scanning the wiring correction device body 3 so as to connect the disconnected wirings 5A shown in FIG. 3-1. In such a repair process by laser CVD processing, as shown in FIG. 3B, unnecessary deposits (metal particles) 5C accumulate around the correction wiring 5B and adhere.

 次に、洗浄装置2の位置決め用観察カメラ13で観察して、不要付着物5Cの所定の形成領域の位置を特定して(上記ステップS1)、制御部18に表面位置情報および表面状態情報を入力する。制御部18は、表面位置情報および表面状態情報に応じて、ガントリステージ駆動部19に制御信号を出力してガントリステージ4を駆動して洗浄装置2の位置合わせを行う(上記ステップS2)。 Next, the position is observed with the positioning observation camera 13 of the cleaning device 2, the position of a predetermined formation region of the unnecessary deposit 5C is specified (step S1), and the surface position information and the surface state information are transmitted to the control unit 18. input. The control unit 18 outputs a control signal to the gantry stage drive unit 19 according to the surface position information and the surface state information to drive the gantry stage 4 and align the cleaning device 2 (step S2).

 そして、液化炭酸ガス噴射ノズル12から液化炭酸ガスをクリーンドライエアと混合して噴射させると同時に、集塵部16で吸引を行って、修正用基板5から剥離された不要付着物を吸引する(上記ステップS3)。そして、位置決め用観察カメラ13で観察して他の不要付着物5Cの形成領域に液化炭酸ガス噴射ノズル12の先端部12Aが対応するように移動させる(ステップS4)。このような操作を繰り返すことにより、図3-3に示すように、不要付着物5Cのドライ洗浄を行うことができる。 Then, the liquefied carbon dioxide gas is mixed with clean dry air and ejected from the liquefied carbon dioxide gas injection nozzle 12, and at the same time, suction is performed by the dust collecting unit 16 to suck unnecessary deposits peeled off from the correction substrate 5 (above-mentioned) Step S3). Then, it is observed with the positioning observation camera 13 and moved so that the tip 12A of the liquefied carbon dioxide gas injection nozzle 12 corresponds to the formation region of the other unnecessary deposits 5C (step S4). By repeating such an operation, as shown in FIG. 3C, the unnecessary deposit 5C can be dry-cleaned.

[第2の実施の形態]
 図4は、本発明の第2の実施の形態に係る配線修正装置1Aの概略を示す構成図である。本実施の形態に係る配線修正装置1Aは、上記した第1の実施の形態に係る配線修正装置1と略同様の構成である。本実施の形態に係る配線修正装置1Aが上記第1の実施の形態に係る配線修正装置1と異なる構成は、洗浄装置本体7に液化炭酸ガスボンベ8Aを搭載していないことである。本実施の形態に係る配線修正装置1Aでは、装置外に大型の液化炭酸ガスボンベ8Bを配置し、洗浄装置2Aの液化炭酸ガス送出部10に連通する流路9に、屈曲性を有する可動耐圧ホース9Aを接続している。このため、この配線修正装置1Aでは、洗浄装置2Aがガントリステージ4とともに移動しても、可動耐圧ホース9Aが伸縮することで大型の液化炭酸ガスボンベ8Bから液化炭酸ガスを液化炭酸ガス送出部10へ供給できる。
[Second Embodiment]
FIG. 4 is a configuration diagram showing an outline of a wiring correction device 1A according to the second embodiment of the present invention. The wiring correction device 1A according to the present embodiment has substantially the same configuration as the wiring correction device 1 according to the first embodiment described above. A different configuration of the wiring correction device 1A according to the present embodiment from the wiring correction device 1 according to the first embodiment is that the liquefied carbon dioxide cylinder 8A is not mounted on the cleaning device body 7. In the wiring correction device 1A according to the present embodiment, a large liquefied carbon dioxide gas cylinder 8B is disposed outside the device, and a flexible pressure-resistant hose having flexibility in the flow path 9 communicating with the liquefied carbon dioxide gas delivery unit 10 of the cleaning device 2A. 9A is connected. For this reason, in this wiring correction device 1A, even if the cleaning device 2A moves together with the gantry stage 4, the movable pressure-resistant hose 9A expands and contracts so that the liquefied carbon dioxide gas is transferred from the large liquefied carbon dioxide gas cylinder 8B to the liquefied carbon dioxide gas delivery unit 10. Can supply.

 なお、本実施の形態に係る洗浄装置2Aに用いる液化炭酸ガスボンベ8Bは、液化炭酸ガス噴射ノズル12から噴射される一回あたりの液化炭酸ガス使用量は約3秒間で1g程度である。また、液化炭酸ガスボンベ8Aの満タン時の重量は、30kgである。ボンベ交換頻度は、修正回数30,000回毎に交換すればよい。 In the liquefied carbon dioxide cylinder 8B used in the cleaning apparatus 2A according to the present embodiment, the amount of liquefied carbon dioxide used per time injected from the liquefied carbon dioxide injection nozzle 12 is about 1 g for about 3 seconds. The weight of the liquefied carbon dioxide cylinder 8A when full is 30 kg. The cylinder replacement frequency may be replaced every 30,000 corrections.

[第3の実施の形態]
 図5は、本発明の第3の実施の形態に係る配線修正装置の要部である洗浄装置2Bの構成図である。本実施の形態における洗浄装置2Bは、洗浄装置本体7に冷却部30を備えている。この冷却部30は、液化炭酸ガス送出部10と液化炭酸ガス噴射ノズル12との間の流路11を冷却するように設定されている。
[Third Embodiment]
FIG. 5 is a configuration diagram of a cleaning device 2B, which is a main part of a wiring correction device according to the third embodiment of the present invention. The cleaning device 2B in the present embodiment includes a cooling unit 30 in the cleaning device body 7. The cooling unit 30 is set to cool the flow path 11 between the liquefied carbon dioxide gas delivery unit 10 and the liquefied carbon dioxide gas injection nozzle 12.

 本実施の形態では、冷却部30として、蓄冷型冷凍機であるスターリング冷凍機を用いる。なお、冷却部30は、これに限定されるものではなく、ペルチェ素子を用いた冷却システムなどの各種の冷却手段を適用することができる。図5に示すように、冷却部30は、制御部18に接続され、制御部18からの制御信号を受けて駆動制御される。本実施の形態においては、冷却部30は制御部18からの制御信号に基づいて温度調節可能に設定されている。 In this embodiment, a Stirling refrigerator that is a regenerative refrigerator is used as the cooling unit 30. The cooling unit 30 is not limited to this, and various cooling means such as a cooling system using a Peltier element can be applied. As shown in FIG. 5, the cooling unit 30 is connected to the control unit 18 and is driven and controlled by receiving a control signal from the control unit 18. In the present embodiment, the cooling unit 30 is set so that the temperature can be adjusted based on a control signal from the control unit 18.

 また、洗浄装置2Bにおいては、上記冷却部30と液化炭酸ガス噴射ノズル12との間の流路11にバルブ31を備えている。本実施の形態では、バルブ31として、エア制御により開閉制御が可能なエア制御バルブや、電磁バルブなどの各種の開閉手段を適用することが可能である。図5に示すように、バルブ31は、制御部18に接続され、制御部18からの制御信号を受けて開閉制御されるようになっている。 Further, in the cleaning device 2B, a valve 31 is provided in the flow path 11 between the cooling unit 30 and the liquefied carbon dioxide injection nozzle 12. In the present embodiment, as the valve 31, various opening / closing means such as an air control valve capable of opening / closing control by air control and an electromagnetic valve can be applied. As shown in FIG. 5, the valve 31 is connected to the control unit 18 and is controlled to open and close in response to a control signal from the control unit 18.

 なお、洗浄装置2Bの他の構成は、第2の実施の形態の洗浄装置2Aと同様である。また、本実施の形態に係る他の構成は、第2の実施の形態の配線修正装置1Aと同様である。 The other configuration of the cleaning device 2B is the same as that of the cleaning device 2A of the second embodiment. The other configuration according to the present embodiment is the same as that of the wiring correction device 1A of the second embodiment.

 以下に、洗浄装置2Bの作用、効果について説明する。液化炭酸ガス噴射ノズル12から噴射されるドライアイス微粒子の生成効率は、流路11の温度に依存する。通常は、洗浄装置2Bは、常温の環境下で使用される。したがって、修正用基板5の表面に付着した不要付着物を洗浄するために必要なドライアイス量を噴射させるには、流路11がある程度冷えるまで、噴射開始から所定の時間が必要である。本実施の形態では、流路11を予め冷却できる冷却部30を備えるため、噴射開始から一定の時間を待たずにすぐにドライアイス微粒子を噴射させることが可能である。 Hereinafter, the operation and effect of the cleaning device 2B will be described. The production efficiency of the dry ice fine particles injected from the liquefied carbon dioxide injection nozzle 12 depends on the temperature of the flow path 11. Normally, the cleaning device 2B is used in a room temperature environment. Therefore, in order to inject the amount of dry ice necessary for cleaning unnecessary deposits adhering to the surface of the correction substrate 5, a predetermined time is required from the start of injection until the flow path 11 cools to some extent. In the present embodiment, since the cooling unit 30 that can cool the flow path 11 in advance is provided, dry ice fine particles can be injected immediately without waiting for a certain time from the start of injection.

 一般に、液化炭酸ガス噴射ノズル12から噴射されるドライアイス微粒子の粒径は、液化炭酸ガス噴射ノズル12に到達する液化炭酸ガスの温度、流量などに依存して変化する。本実施の形態においては、冷却部30は、制御部18からの制御信号に基づいて流路11の冷却温度を調整できる。このため、液化炭酸ガス噴射ノズル12から噴射されるドライアイス微粒子の粒径を制御することも可能である。 Generally, the particle size of the dry ice fine particles ejected from the liquefied carbon dioxide jet nozzle 12 varies depending on the temperature, flow rate, etc. of the liquefied carbon dioxide reaching the liquefied carbon dioxide jet nozzle 12. In the present embodiment, the cooling unit 30 can adjust the cooling temperature of the flow path 11 based on a control signal from the control unit 18. For this reason, it is also possible to control the particle size of the dry ice fine particles injected from the liquefied carbon dioxide injection nozzle 12.

 上述のように、本実施の形態では、液化炭酸ガスを予め冷却できるため、必要なドライアイス微粒子の噴射量を噴射と略同時に得ることができる。このため、本実施の形態では、処理時間の短縮化を図ることができる。また、本実施の形態における洗浄装置2Bによれば、ドライアイス微粒子の粒径も制御できるため、不要付着物の種類が異なる洗浄領域、不要付着物の付着力の異なる洗浄領域などの異なる対象に対処することが可能となる。したがって、本実施の形態では、例えば、リペア処理がZAP加工とレーザCVD加工のいずれかの工程で行われたかに応じて、冷却部30、バルブ31のいずれかを制御するか、または両者を複合的に制御することで、適切な洗浄力に調整することができる。 As described above, in the present embodiment, since the liquefied carbon dioxide gas can be cooled in advance, the necessary amount of dry ice fine particles can be obtained almost simultaneously with the injection. For this reason, in this Embodiment, processing time can be shortened. In addition, according to the cleaning apparatus 2B in the present embodiment, the particle size of the dry ice fine particles can also be controlled. It becomes possible to cope. Therefore, in this embodiment, for example, either the cooling unit 30 or the valve 31 is controlled or both are combined depending on whether the repair process is performed in any of the ZAP process and the laser CVD process. Can be adjusted to an appropriate detergency.

(その他の実施の形態)
 以上、本発明の実施の形態および実施例について説明したが、これら実施の形態および実施例の開示の一部をなす論述および図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例および運用技術が明らかとなろう。
(Other embodiments)
Although the embodiments and examples of the present invention have been described above, it should not be understood that the descriptions and drawings constituting part of the disclosure of these embodiments and examples limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

 例えば、上記の各実施の形態では、集塵部16が一つであるが、複数の集塵部16を配置してもよい。また、上記の各実施の形態では、補助気体としてクリーンドライエアを用いたがこれに限定されない。 For example, in each of the above-described embodiments, there is one dust collection unit 16, but a plurality of dust collection units 16 may be arranged. In each of the above embodiments, clean dry air is used as the auxiliary gas, but the present invention is not limited to this.

 上記の各実施の形態では、配線修正装置1を修正用基板5に対して、X-Y軸方向へ移動する構成であるが、修正用基板5側が配線修正装置1に対してX-Y軸方向に移動する構成でもよい。 In each of the embodiments described above, the wiring correction device 1 is configured to move in the XY axis direction with respect to the correction substrate 5, but the correction substrate 5 side is XY axis relative to the wiring correction device 1. The structure which moves to a direction may be sufficient.

 1,1A 配線修正装置
 2,2A,2B 洗浄装置
 3 配線修正装置本体
 4 ガントリステージ(位置決め機構)
 5 修正用基板(基板)
 5A 配線
 5B 修正配線
 5C 不要付着物(金属粒子)
 6 テーブル
 7 洗浄装置本体
 8A,8B 液化炭酸ガスボンベ
 9 流路
 9A 可動耐圧ホース
 10液化炭酸ガス送出部
 11 流路
 12 液化炭酸ガス噴射ノズル(液化炭酸ガス噴射部)
 12A 先端部
 13 位置決め用観察カメラ(観察部)
 14 エア供給路
 15 CDA供給部(エア供給部)
 16 集塵部
 16A 吸引口
 17 エア排出路
 18 制御部
 30 冷却部
 31 バルブ
1, 1A Wiring correction device 2, 2A, 2B Cleaning device 3 Wiring correction device body 4 Gantry stage (positioning mechanism)
5 Correction board (board)
5A wiring 5B correction wiring 5C unnecessary deposits (metal particles)
6 Table 7 Cleaning device body 8A, 8B Liquefied carbon dioxide gas cylinder 9 Flow path 9A Movable pressure-resistant hose 10 Liquefied carbon dioxide gas delivery part 11 Flow path 12 Liquefied carbon dioxide gas injection nozzle (liquefied carbon dioxide gas injection part)
12A Tip 13 Positioning observation camera (observation part)
14 Air supply path 15 CDA supply section (air supply section)
16 Dust Collection Unit 16A Suction Port 17 Air Discharge Path 18 Control Unit 30 Cooling Unit 31 Valve

Claims (13)

 配線のリペア処理の後に不要付着物が付着した基板の表面の洗浄を行う洗浄装置であって、
 前記基板の表面に向けて液化炭酸ガスを噴射させて、液化炭酸ガスを断熱膨張によりドライアイス微粒子に変化させる液化炭酸ガス噴射部と、
 前記液化炭酸ガス噴射部から噴射されたドライアイス微粒子が衝突する前記基板の表面位置および表面状態を観察して前記ドライアイス微粒子が衝突する不要付着物の位置を特定することを可能にする観察部と、
 を備える洗浄装置。
A cleaning device that cleans the surface of a substrate on which unnecessary deposits adhere after wiring repair processing,
A liquefied carbon dioxide gas injection unit that injects liquefied carbon dioxide gas toward the surface of the substrate and changes the liquefied carbon dioxide gas into dry ice fine particles by adiabatic expansion;
An observing unit for observing the surface position and surface state of the substrate on which the dry ice fine particles ejected from the liquefied carbon dioxide jetting unit collide, and identifying the position of the unnecessary deposit on which the dry ice fine particles collide. When,
A cleaning device comprising:
 前記ドライアイス微粒子が衝突して前記基板から剥離された不要付着物を剥離直後に吸引する集塵部をさらに備える
 請求項1に記載の洗浄装置。
The cleaning apparatus according to claim 1, further comprising a dust collection unit that sucks an unnecessary deposit separated from the substrate by the collision of the dry ice fine particles immediately after the separation.
 前記観察部からの表面位置情報および表面状態情報に基づいて前記ドライアイス微粒子が前記不要付着物に衝突するよう前記液化炭酸ガス噴射部の位置制御を行う制御部をさらに備える
 請求項2に記載の洗浄装置。
The control part which controls the position of the said liquefied carbon dioxide injection part so that the said dry ice fine particle collides with the said unnecessary deposit | attachment based on the surface position information and surface state information from the said observation part is further provided. Cleaning device.
 前記液化炭酸ガス噴射部と前記観察部と前記集塵部は位置決め機構に搭載され、前記位置決め機構は前記制御部により駆動制御されて、前記液化炭酸ガス噴射部から噴射された前記ドライアイス微粒子が前記不要付着物に衝突するように位置決めされる
 請求項3に記載の洗浄装置。
The liquefied carbon dioxide injection unit, the observation unit, and the dust collecting unit are mounted on a positioning mechanism, and the positioning mechanism is driven and controlled by the control unit, so that the dry ice fine particles injected from the liquefied carbon dioxide injection unit are The cleaning apparatus according to claim 3, wherein the cleaning apparatus is positioned so as to collide with the unnecessary deposit.
 前記液化炭酸ガス噴射部に、前記液化炭酸ガスとともに噴射される補助気体を供給するエア供給路が連通している
 請求項3に記載の洗浄装置。
The cleaning apparatus according to claim 3, wherein an air supply path that supplies auxiliary gas that is injected together with the liquefied carbon dioxide gas communicates with the liquefied carbon dioxide gas injection unit.
 前記エア供給路に前記補助気体を供給するエア供給部を備え、
 前記制御部は、前記リペア処理がZAP加工とレーザCVD加工のいずれかの工程で行われたかに応じて、前記エア供給部の送出圧力を変更させる
 請求項5に記載の洗浄装置。
An air supply unit for supplying the auxiliary gas to the air supply path;
The cleaning apparatus according to claim 5, wherein the control unit changes a delivery pressure of the air supply unit depending on whether the repair process is performed in any one of a ZAP process and a laser CVD process.
 前記位置決め機構には、前記液化炭酸ガス噴射部に液化炭酸ガスを供給する液化炭酸ガスボンベが前記液化炭酸ガス噴射部とともに移動可能に搭載されている
 請求項4に記載の洗浄装置。
The cleaning apparatus according to claim 4, wherein a liquefied carbon dioxide gas cylinder that supplies liquefied carbon dioxide gas to the liquefied carbon dioxide gas injection unit is movably mounted on the positioning mechanism together with the liquefied carbon dioxide gas injection unit.
 前記液化炭酸ガス噴射部には、屈曲性を有する可動耐圧ホースを介して液化炭酸ガスボンベが接続され、
 前記液化炭酸ガスボンベは装置外に配置されている
 請求項4に記載の洗浄装置。
A liquefied carbon dioxide gas cylinder is connected to the liquefied carbon dioxide gas injection unit via a movable pressure-resistant hose having flexibility,
The cleaning apparatus according to claim 4, wherein the liquefied carbon dioxide gas cylinder is disposed outside the apparatus.
 前記液化炭酸ガス噴射部に液化炭酸ガスを送る流路を冷却する冷却部を備える
 請求項1に記載の洗浄装置。
The cleaning apparatus according to claim 1, further comprising a cooling unit that cools a flow path that sends the liquefied carbon dioxide gas to the liquefied carbon dioxide injection unit.
 前記液化炭酸ガス噴射部に液化炭酸ガスを送る流路にバルブを備える
 請求項1に記載の洗浄装置。
The cleaning apparatus according to claim 1, wherein a valve is provided in a flow path for sending liquefied carbon dioxide gas to the liquefied carbon dioxide gas injection unit.
 請求項1~請求項10のいずれか一項に記載の洗浄装置を備え、
 レーザCVD加工用の原料ガスを供給する原料ガスユニットと、前記基板上の配線形成領域にレーザを照射して前記原料ガスユニットから供給される原料ガスを光分解させるCVD用レーザ発振器と、レーザを照射して前記基板上の前記配線の接続を行うZAP用レーザ発振器と、
 を備える配線修正装置。
A cleaning apparatus according to any one of claims 1 to 10,
A source gas unit that supplies a source gas for laser CVD processing, a laser oscillator for CVD that photo-decomposes a source gas supplied from the source gas unit by irradiating a laser on a wiring formation region on the substrate, and a laser A laser oscillator for ZAP that irradiates and connects the wiring on the substrate;
A wiring correction device comprising:
 配線のリペア処理の後に不要付着物が付着した基板の洗浄を行う洗浄方法であって、
 前記基板の前記不要付着物の位置を特定し、
 前記不要付着物の前記位置に向けて、液化炭酸ガスを噴射させ、液化炭酸ガスを断熱膨張によりドライアイス微粒子に変化させて前記不要付着物に衝突させ、
 前記不要付着物を前記基板から剥離された直後の前記不要付着物を吸引して排除する
 洗浄方法。
A cleaning method for cleaning a substrate to which unnecessary deposits are attached after wiring repair processing,
Identify the position of the unwanted deposit on the substrate;
Injecting liquefied carbon dioxide gas toward the position of the unnecessary deposits, changing the liquefied carbon dioxide gas into dry ice fine particles by adiabatic expansion, and colliding with the unnecessary deposits,
A cleaning method in which the unnecessary deposits are removed by sucking the unnecessary deposits immediately after being peeled from the substrate.
 前記液化炭酸ガスを、補助気体とともに送り出し、
 前記リペア処理がZAP加工とレーザCVD加工のいずれかの工程で行われたかに応じて、前記補助気体の送出圧力を変更させる
 請求項12に記載の洗浄方法。
The liquefied carbon dioxide gas is sent out together with the auxiliary gas,
The cleaning method according to claim 12, wherein the supply pressure of the auxiliary gas is changed depending on whether the repair process is performed in any one of a ZAP process and a laser CVD process.
PCT/JP2017/045331 2016-12-20 2017-12-18 Cleaning device, wiring correction device, and cleaning method Ceased WO2018117027A1 (en)

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CN113169062A (en) * 2018-11-30 2021-07-23 东京毅力科创株式会社 Substrate cleaning method, processing container cleaning method, and substrate processing apparatus
CN119327807A (en) * 2024-11-22 2025-01-21 国能神东煤炭集团有限责任公司 Wire rope online cleaning method and wire rope cleaning device
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