CN1796008B - Substrate processing device and processing method thereof - Google Patents

Abstract

The present invention relates to a substrate processing device, which includes: a loading part for loading a substrate formed with a material film; a dry ice supply part for supplying dry ice particles or carbon dioxide; Spraying dry ice particles provided by the above-mentioned dry ice supply unit, or spraying solidified carbon dioxide onto the substrate to perform preliminary surface treatment on the material film; the surface treatment unit selectively removes the above-mentioned preliminary surface-treated material film. The invention uses dry ice particles without residues to modify or partially remove the material film, and removes the modified material film through surface treatment such as cleaning or etching, thereby shortening the man-hour required for material film removal.

Description

Substrate processing device and processing method thereof

technical field

The present invention relates to a substrate processing device and a processing method thereof, in particular to a substrate processing device and a processing method capable of easily removing the modified substance film by modifying a substance film to be removed and then cleaning or etching.

Background technique

Generally, LCD (liquid crystal display) is a kind of substrate, which includes: a substrate area, which includes thin film transistors and transparent electrodes; a liquid crystal area, located on the substrate area and polarizing; a color filter area, located on the liquid crystal area and determining the color .

In the process of manufacturing the above LCD, vacuum evaporation and patterning of thin films are repeated. In the process of vacuum coating or pattern formation, if the film is abnormal, it is not discarded, but reworked.

The existing reprocessing process is to use wet cleaning equipment or dry cleaning equipment to selectively remove (Strip) the defective films such as color filter and polyimide, and then carry out Vacuum coating.

At this time, the chemical agent used for removal is mainly potassium hydroxide (KOH).

The above-mentioned polyimide has strong corrosion resistance to chemicals, and it takes considerable time to completely remove the defective film.

In addition, wet cleaning equipment is bulky and is very harmful to the health of operators due to the large amount of toxic chemicals used in the operation process.

Contents of the invention

The present invention aims to solve the above-mentioned problems, and an object thereof is to provide a substrate processing apparatus and a processing method thereof capable of quickly and conveniently removing a substance film.

Another object of the present invention is to provide a substrate processing device and a processing method thereof, which are small in size and can reduce the amount of toxic substances used.

Another object of the present invention is to provide a substrate processing apparatus and a processing method thereof that are not only used for flat panel displays such as LCDs, but also can clean various micro components.

In addition, another object of the present invention is to provide a nozzle that can improve the ejection efficiency during substrate processing and has excellent processability.

In order to achieve the above object, the present invention includes: a loading part, which loads a substrate formed with a material film; a dry ice supply part, which supplies dry ice particles or carbon dioxide; The dry ice particles provided by the department, or the solidified carbon dioxide is sprayed onto the substrate to perform preliminary surface treatment on the material film; the surface treatment department selectively removes the above-mentioned material film that has undergone preliminary surface treatment.

In addition, the present invention includes: the loading stage, loading the substrate with the material film formed; the pretreatment stage, spraying dry ice particles on the above-mentioned loaded substrate, so as to perform preliminary surface treatment on the material film on the above-mentioned substrate; the surface treatment stage, the above-mentioned Selective removal of the material film after preliminary surface treatment.

The invention uses dry ice particles without residues to modify or partially remove the material film, and removes the material film through surface treatment such as cleaning or etching, thereby shortening the man-hour for removing the material film.

In addition, in the process of removing the material film, it will not cause damage to the lower tissue of the material film, and because the amount of chemicals used is less, it is more economical, and it can also reduce the time and frequency of exposure of operators to toxic environments. Improved security.

In addition, the present invention performs multiple times of adiabatic expansion in one nozzle, and uses a structure with high adiabatic effect, thereby increasing the generation rate of dry ice particles and improving the substrate processing efficiency.

In addition, the use of a straight nozzle in the present invention has excellent workability and can reduce the manufacturing cost of the nozzle.

Description of drawings

FIG. 1 is a schematic diagram of an embodiment of a substrate processing apparatus of the present invention;

2a to 2d are cross-sectional views of the processing procedure of an embodiment of the substrate processing method of the present invention;

Fig. 3 is a schematic diagram of an embodiment of the injection device of Fig. 1;

4 is a schematic structural view of another embodiment of the substrate processing apparatus of the present invention;

Fig. 5 is a schematic diagram of another embodiment of the dry ice supply part of Fig. 4;

6 to 12 are respectively cross-sectional views of another embodiment of the nozzle in FIG. 5 .

10: Substrate 11: Bottom layer

12: Remove the object layer 20: Tablet

21: Roller 30: Dry ice supply department

40: Injection device 50: Wet device

60: Control panel 70: Exhaust part

Detailed ways

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

【Example 1】

FIG. 1 is a plan view of an embodiment of a substrate processing apparatus in the present invention.

As shown in the figure, the substrate processing device in the present invention includes: a flat plate 20, provided with a plurality of rollers 21, for loading the substrate 10 that needs to be stripped; a dry ice supply part 30, providing dry ice particles; The entire surface of the removal object film of the substrate on the above-mentioned flat plate 20 is sprayed with dry ice particles provided by the above-mentioned dry ice supply part 30; the wet device 50 performs wet cleaning on the removal target layer of the substrate 10 sprayed by dry ice particles on the above-mentioned flat plate 20; The control board 60 controls the driving of the flat plate 20 , the dry ice supply unit 30 and the spraying device 40 .

Hereinafter, an embodiment of the substrate processing apparatus of the present invention having the above-mentioned structure will be described in detail.

2a to 2d are cross-sectional views of the processing procedure of an embodiment of the substrate processing method of the present invention.

As shown in FIG. 2 a , the substrate 10 formed with a material film to be removed such as a color filter, polyimide or overcoating (Overcoating) is loaded on a flat plate 20 .

At this time, the roller 21 of the flat plate 20 rotates under the control of the control board 60 to load the substrate 10 on the top of the flat plate 20 , and when the loading is completed, the rotation of the roller 21 stops.

The actual structure of the above-mentioned substrate 10 is relatively complicated, and here it is simplified as a base layer 11 including components such as a glass substrate, and a removal object layer 12 located on the base layer 11 .

The above-mentioned layer to be removed 12 may be a color filter, polyimide, or overcoat.

A plurality of rollers 21 are provided on the flat plate 20 for loading the substrate 10 and unloading the substrate 10 to the wet device 50 .

After the substrate 10 on which the layer to be removed 12 is formed is loaded on the plate 20 , the dry ice supply part 30 supplies dry ice particles to the blasting device 40 .

At this time, the dry ice supplied from the dry ice supply unit 30 to the ejection device 40 has a particle diameter of 0.5 to 3.0 mm. The reason why the dry ice particle size is limited is because when the dry ice particle size is less than 0.5mm, it is difficult to change the film quality of the removal object layer 12, and when the particle size is more than 3.0mm, the excessive particle size may cause damage to the base layer 11. cause damage.

The above-mentioned dry ice supply unit 30 sprays dry ice with high-pressure nitrogen or purified air, and sprays the dry ice onto the surface of the substrate 10 mounted on the flat plate 20 through the nozzle on the spraying device 40 .

Use of the above nitrogen or purified air can prevent secondary pollution from occurring.

Next, as shown in FIG. 2 b , dry ice particles are uniformly sprayed onto the entire or part of the surface of the removal object layer 12 of the substrate 10 mounted on the flat plate 20 by the spraying device 40 .

By such spraying, the layer 12 to be removed is damaged to form depressions or cracks, and a part is completely removed.

FIG. 3 is a schematic front view of the above-mentioned spraying device 40 .

As shown in the figure, the above-mentioned spraying device 40 includes: a moving frame 41 that is at a certain distance from the top of the flat plate 20 and can move with the flat plate 20; The nozzle 42.

In this way, the dry ice particles sprayed by the above-mentioned spraying device 40 are evenly sprayed onto the entire surface of the above-mentioned removal object layer 12, and the surface of the removal object layer 12 impacted by the dry ice particles produces depressions or cracks of a certain depth and area.

At this time, the layer to be removed 12 changes due to the above-mentioned dents or cracks that occur, and part of it is completely removed to expose the base layer 11 below the layer to be removed 12 .

The nozzle pipe 42 of the above-mentioned spraying device 40 may be movable as described above, or may be installed in a fixed state with reduced installation intervals, and the same effect can be obtained.

After the dry ice particles ejected from the nozzle 42 hit the surface of the removal target layer 12, they are lifted without leaving debris on the removal target layer, and their volume increases sharply during the lift process, making the peeling effect more prominent.

In order to make the ejected dry ice particles easy to lift, conditions such as temperature and pressure of the above-mentioned plate 20 should be maintained at appropriate levels.

In the above-mentioned embodiment, dry ice particles are used, but the same effect can be obtained by using other hypnotic solid particles besides dry ice particles.

Next, as shown in FIG. 2 c , the substrate 10 on which the surface of the target layer 12 is damaged after being removed by dry ice blasting is moved to a wet device 50 for wet cleaning with chemicals.

Moreover, the wet or dry strip (Wet/Dry strip) using a variety of chemicals can also achieve the same effect, as long as it can effectively remove the removal object layer 12 changed by the impact of the above-mentioned dry ice, the method is not limited.

The above-mentioned movement of the substrate 10 to the wet device 50 is completed by the roller 21 of the flat plate 20 .

The target layer 12 is removed by spraying or immersing the substrate 10 moved to the wet apparatus 50 described above.

At this time, the surface of the layer to be removed 12 has been dented or cracked and modified, and these dented or cracked areas increase the contact area between the chemical agent and the layer to be removed 12 .

In this way, the cleaning area is increased, rapid removal can be performed, the amount of chemicals used can be reduced, and the cost of the removal process is reduced.

In addition, by reducing the amount and time of use of toxic chemicals such as potassium hydroxide, the exposure time of operators to toxic substances is greatly reduced.

FIG. 2 d is a schematic diagram of the removal target layer 12 completely removed after the above cleaning.

[Example 2]

FIG. 4 is a schematic structural view of another embodiment of the substrate processing apparatus of the present invention.

As shown in the figure, the substrate processing apparatus in the present invention includes: a flat plate 20, provided with a plurality of rollers 21, to load the substrate 10 to be removed; The entire surface is sprayed with dry ice particles; the dry ice particle supply part 31 stores and supplies granular (Pellet) dry ice; the crushing part 32 crushes the granular dry ice provided by the dry ice particle supply part 31 into particles with a particle size of 0.5 to 3.0mm; Spray section 33 sprays the above-mentioned pulverized dry ice particles through the spray pipe of above-mentioned spray device 40; wet device 50 performs wet cleaning on the removal target layer of substrate 10 on the above-mentioned flat plate 20 through dry ice particle spray; exhaust section 70 , to exhaust the debris generated on the above-mentioned flat plate 20 together with the carbon dioxide formed by the uplift of dry ice particles; the control panel 60 controls the above-mentioned various parts.

Through the above-mentioned structure, the granular dry ice particles are stored in the dry ice particle supply part 31, and then the stored dry ice is crushed into dry ice particles with a certain particle size in the crushing part 32, and high-pressure purified air or nitrogen is used to remove the dust from the above-mentioned spraying device. 40 nozzles for spraying.

By spraying dry ice particles on the surface of the removal target layer 12, the surface of the removal target layer 12 of the substrate is modified, so that the removal target layer 12 can be easily removed in the wet device 50, and its effect has been fully realized in the first embodiment. Explanation, no more description here.

The above-mentioned dry ice particles impacted on the layer 12 to be removed undergo uplifting, and the carbon dioxide generated by the uplifting and particles of the layer 12 to be removed caused by the impact are discharged from the exhaust part 70 along with the airflow.

[Example 3]

In the above-mentioned Embodiment 1 and Embodiment 2, the dry ice supply part 30 receives solid dry ice from the outside, and sprays the dry ice to the surface of the substrate 10. It is also possible to supply liquid or gaseous carbon dioxide and carrier gas in the dry ice supply part 30 ( Carrier gas), then in the nozzle 42, the carbon dioxide is changed into a solid and sprayed.

FIG. 5 is a schematic structural view of another embodiment of the substrate processing apparatus of the present invention.

As shown in the figure, the dry ice supply part 30 in the substrate processing apparatus of the present invention includes: a carbon dioxide supply source 34 and a carrier gas supply source 35 that respectively provide carbon dioxide and a carrier gas; , and provided to the cooling device 36 of the spray pipe 42 of the injection device 40; detect the temperature of the above-mentioned spray pipe 42, and according to the result, the temperature control part 37 that controls the operation of the above-mentioned cooling device 36; The pressure and flow rate of the carrier gas 35 are controlled and supplied to the pressure regulator 38 and the flow rate control unit 39 of the nozzle 42 .

Hereinafter, the structures and functions of the embodiments of the present invention will be described in detail.

The carbon dioxide supply source 34 is a container for storing liquid carbon dioxide, and the carrier gas supply source 35 is a container for storing carrier gas such as purified air or nitrogen.

When the carbon dioxide supplied by the carbon dioxide supply source 34 is injected through the nozzle, the carbon dioxide is cooled in the cooling device 36 and supplied to the nozzle 42 of the injection device 40 in order to be easily converted into solid dry ice particles.

At the same time, the carrier gas in the carrier gas supply source 35 is also supplied to the nozzle 42 of the injection device 40 , and the pressure and flow of the carrier gas are controlled by the pressure regulator 38 and the flow control unit 39 during the carrier gas supply.

Thus, the structure of the nozzle 42 receiving the carrier gas and the cooled carbon dioxide solidifies the carbon dioxide by adiabatic expansion to generate dry ice particles, and sprays the dry ice particles and the carrier gas.

FIG. 6 is a schematic cross-sectional view of an embodiment of the nozzle 42 in the present invention.

As shown in the figure, when receiving carbon dioxide and carrier gas in the above-mentioned nozzle 42 and spraying dry ice particles, the carbon dioxide that flows in from the carbon dioxide inflow port 43 passes through the first nozzle part 45. The carrier gas flowing in through the carrier gas inlet 44 passes through the outside of the first nozzle part 45, and is sprayed from the second nozzle part 46 together with the aerosol sprayed by the first nozzle part 45.

That is, the structure of the above-mentioned nozzle 42 is that the first nozzle portion 45 is provided inside the second nozzle portion 46, and the carbon dioxide injected and pressurized by the first nozzle portion 45 undergoes adiabatic expansion in the second nozzle portion 46 to form a carbon dioxide gas containing dry ice particles. The aerosol is ejected to the substrate 10 together with the carrier gas flowing into the second nozzle portion 46 .

The nozzles of the first nozzle part 45 and the second nozzle part 46 are smaller than the inflow ports, so high pressure can be applied to the carbon dioxide, so that the carbon dioxide expands adiabatically and turns into dry ice particles.

The above-mentioned cooled carbon dioxide undergoes a pressure change in the multi-nozzle structure of the nozzle 42 , changes phase into dry ice particles, and is sprayed onto the substrate 10 to treat the surface of the substrate 10 .

A temperature sensor is provided in the nozzle 42, and the temperature control unit 37 controls the operation of the cooling device 36 according to the temperature detection result of the temperature sensor. That is, when the temperature of the nozzle 42 is above the set temperature, the cooling device 36 is started to cool the carbon dioxide to promote the phase change process, and when the temperature of the nozzle 42 is lower than the set temperature, the operation of the cooling device 36 is stopped to prevent The injection port of the nozzle pipe 42 is clogged.

The above-mentioned set temperature is the optimum temperature for curing, which is between -10°C and -100°C.

The above structure is a structure in which the dry ice particles and the carrier gas are mixed and injected in the second nozzle part 46, and the nozzle injection speed is relatively low.

This nozzle for weak cleaning is suitable for lens, charge coupled device (Charge Coupled Device: CCD), CMOS (Complementary-Metal-Oxide-Semiconductor) camera chip and other precision parts that may be damaged by strong cleaning.

When the above-mentioned precision parts are cleaned, after spraying dry ice, they are directly unloaded without passing through the wet device 50 .

【Example 4】

FIG. 7 is a cross-sectional view of another embodiment of the nozzle 42 described above.

As shown in the figure, another embodiment of the nozzle 42 in Embodiment 3 of the present invention includes: a first nozzle part 45, which pressurizes and sprays the carbon dioxide flowing in through the carbon dioxide inflow port 43, and generates dry ice through adiabatic expansion Particles; the second nozzle part 46 mixes and sprays the carrier gas flowing in through the carrier gas inlet 44 and the dry ice generated by the first nozzle part 45; the third nozzle part 47 sprays the dry ice through the second nozzle part 46 and the carrier gas, and the carrier gas entering from the outside of the second nozzle part 46 are mixed and injected.

The entrance of the second nozzle part 46 is provided with a first path 48 for the carrier gas to flow into the second nozzle part selectively; a second path 49 for the carrier gas to flow into the third nozzle part 47 .

Above-mentioned first nozzle portion 45 and second nozzle portion 46 have the same function as nozzle pipe 42 shown in FIG. The carrier gas is mixed and injected. Through the above-mentioned structure, it is possible to prevent condensation water from being generated on the surface of the spray pipe 42, that is, the surface of the third nozzle portion 47, and improve cleaning efficiency.

That is, it can prevent the temperature of the carbon dioxide in the nozzle 42 from rising due to the external environment, and facilitate adiabatic expansion, thereby increasing the generation rate of dry ice particles and improving cleaning efficiency.

【Example 5】

FIG. 8 is a structural view of another embodiment of the nozzle 42 in the third embodiment.

As shown in the figure, its structure includes: the first nozzle part 45, the second nozzle part 46 and the third nozzle part 47 same as the above-mentioned Fig. 7, and a first path for supplying carrier gas to the third nozzle part 47 is provided. 48 and the second nozzle part 49 for supplying the carrier gas to the second nozzle part 46 .

Wherein, the diameter of the outlet port of the second nozzle portion 46 maintains a certain diameter from the inside to the outside, and then gradually increases.

The outlet end of the second nozzle part 46 has the above-mentioned shape, and the ejected aerosol containing dry ice undergoes adiabatic expansion to re-solidify the unsolidified liquid carbon dioxide. With this double adiabatic expansion structure, larger-sized dry ice particles can be generated, and the number of dry ice particles ejected is also increased, enabling strong cleaning.

[Example 6]

FIG. 9 is a structural view of another embodiment of the nozzle 42 in the third embodiment above.

As shown in the figure, the nozzle 42 includes: a first nozzle part 45, which mixes the carbon dioxide and the carrier gas flowing in through the carbon dioxide inlet 43 and the carrier gas inlet 44, and has a plurality of adiabatic expansion structures inside, so that it can spray particles containing dry ice aerosol; the second nozzle part 46 is separated from the outside of the first nozzle part 45 by a space, and mixes and sprays the carrier gas supplied through the space and the jet from the first nozzle part 45 .

One end of the first nozzle part 45 is provided with a carrier gas inlet 44 for the carrier gas to flow in. With the inflow of the carrier gas, carbon dioxide flows in from the carbon dioxide inlet 43 on the side of the first nozzle part 45 .

In the above-mentioned first nozzle part 45 , the diameter of the part where the carrier gas and carbon dioxide are mixed is relatively small, and many adiabatic expansion structures are provided from this part to the outlet end of the first nozzle part 45 .

That is, parts with large diameters and parts with small diameters are interlaced, and the diameters are from small to large. In this way, in the first nozzle part 45, through multiple adiabatic expansions, more dry ice particles with larger particle diameters are obtained, and the aerosol containing such dry ice particles is sprayed after the second nozzle part 46 is mixed with the carrier gas. to the substrate 10.

This structure not only improves the heat insulation effect, but also can perform multiple times of heat insulation expansion, thereby improving the cleaning effect.

[Example 7]

FIG. 10 is a cross-sectional view of another embodiment of the nozzle 42 in the third embodiment.

As shown in the figure, the spray pipe 42 includes: a mixing pipe 81, which is used for carrier gas and carbon dioxide to flow in and mix; a crystallization growth pipe 82, which is connected to one end of the above-mentioned mixing pipe 81, and has a smaller inner diameter than the inner diameter of the mixing pipe 81; the injection pipe 83 , connected to one end of the above-mentioned crystal growth tube 82 , accelerates the growth of cleaning particles, and sprays the particles onto the surface of the substrate 10 .

The mixing tube 81, the crystal growth tube 82, and the injection tube 83 are shaped as straight tubes whose respective inner diameters and outer diameters are kept constant.

The mixing tube 81 , the crystal growth tube 82 and the injection tube 83 of this straight tube shape are better in processability and lower in manufacturing cost than the nozzle structures described in the above-mentioned embodiments 3 to 6.

The mixing tube 81 is provided with inflow ports 11 and 12 through which carbon dioxide and a carrier gas flow in, respectively. One or more than two inlets 43 and 44 may be provided respectively.

The locations of the inlets 43 and 44 are not particularly limited. As shown in FIG. 8 , it is better to arrange the direction of the carrier gas inlet 44 such that the crystallization growth tube 82 and the injection tube 83 are aligned.

The carbon dioxide and carrier gas mixed in the mixing tube 81 flow into the crystal growth tube 82 under the pressure of the carrier gas and carbon dioxide flowing in through the inflow ports 43 and 44 .

The diameter of the above-mentioned crystal growth tube 82 is smaller than that of the above-mentioned mixing tube 81. As the pressure increases, carbon dioxide is converted into particles, and the particles grow gradually to form dry ice particles.

Although there are some differences depending on whether the carbon dioxide used is liquid or gas, as the pressure of gas or liquid increases, carbon dioxide becomes solid, which can be confirmed from the phase transition curve of carbon dioxide.

The pressure in the crystal growth tube 82 is higher than the pressure in the mixing tube 81, and due to this pressure difference, when liquid or low-temperature gaseous carbon dioxide is used, dry ice crystals are formed.

The diameter of the crystallization growth tube 82 should be in the range of 20% to 50% of the diameter of the mixing tube 81 .

The aerosol containing dry ice and the carrier gas in the crystal growth tube 82 are sprayed onto the surface of the substrate 10 through the spray tube 83 .

Wherein, the diameter of spray pipe 83 is between 10% to 30% of the diameter of mixing pipe 18, like this, can provide higher pressure, increase the size of the dry ice particle that generates in above-mentioned crystal growth pipe 82 again, and make liquid or gaseous carbon dioxide into a solid.

In addition, high-pressure and high-speed spraying is possible, improving cleaning efficiency.

The inner diameter connections between the mixing tube 81 and the crystal growth tube 82 and between the crystal growth tube 82 and the injection tube 83 are sloped surfaces, thereby preventing the occurrence of eddy currents.

[Embodiment 8]

FIG. 11 is a cross-sectional view of an embodiment of the nozzle 42 described in Embodiment 3 above.

As shown in the figure, first and second crystal growth tubes 84 and 85 are provided between the straight mixing tube 81 and the injection tube 83 .

The diameter of the second crystal growth tube 85 is smaller than the diameter of the first crystal growth tube 84 connected to the mixing tube 81 .

By connecting the straight tubes in order of diameter from large to small, the carbon dioxide and carrier gas mixture can be pressurized step by step, that is, dry ice is generated in the first crystallization growth tube 84 and the second crystallization growth tube 85 respectively, And increase the dry ice particle size.

The aerosol contains the dry ice which is generated in the second crystal growth tube 85 and has an enlarged particle size, and is sprayed to the surface of the substrate 10 through the spray tube 83 .

At this time, the increase of the pressure in the injection pipe 83 leads to the generation of dry ice and the increase of particle size, which can further improve the cleaning efficiency.

Between the above-mentioned mixing tube 81 and the first crystal growth tube 84, between the first crystal growth tube 84 and the second crystal growth tube 85, and between the second crystal growth tube 85 and the injection tube 83, the inner diameter connecting parts are inclined surfaces, to prevent eddy currents from occurring.

[Example 9]

FIG. 12 is a cross-sectional view of an embodiment of the nozzle 42 in the third embodiment.

As shown in the figure, the basic structure of the nozzle 42 is the same as that in Embodiment 7. In the crystallization growth tube 82, the temperature of the mixed gas of carbon dioxide and carrier gas or the aerosol can be detected.

It can be seen from the phase change curve of general substances that the low-temperature gas cooled to a temperature below the triple point will change into a solid with the increase of pressure, and the liquid slightly higher than the triple point will also change into a phase with the increase of pressure. solid.

To cause a phase transition through pressurization, the temperature of the carbon dioxide needs to be maintained within a certain range, so a temperature sensor 86 can be added to detect the temperature.

The temperature control unit 37 in the third embodiment controls the operation of the cooling device 36 based on the temperature detected by the temperature sensor 86 .

Specific preferred embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and those skilled in the art can make various modifications to the present invention within the scope of the concept of the present invention.

Claims (4)

1. A substrate processing device, characterized in that, comprising: A loading section for loading substrates formed with material films; a dry ice supply section for supplying carbon dioxide; a spray processing section including more than one spray pipe for solidifying the carbon dioxide provided by the dry ice supply section and spraying it onto the substrate , to carry out preliminary surface treatment on the material film; a surface treatment part, to selectively remove the above-mentioned material film that has undergone preliminary surface treatment; The nozzle includes: a first nozzle part, which pressurizes the carbon dioxide flowing in through the carbon dioxide inlet, and generates dry ice particles through adiabatic expansion; The dry ice generated in the first part is mixed and sprayed; the third nozzle part mixes the dry ice and carrier gas sprayed through the second nozzle part, and the carrier gas entering from the outside of the second nozzle part before spraying; The entrance of the second nozzle part is provided with: a first path through which the carrier gas can selectively flow into the second nozzle part; and a second path through which the carrier gas can flow into the inside of the third nozzle part. 2. The substrate processing apparatus according to claim 1, wherein: The substrate is loaded on a flat plate provided with a plurality of rollers, and the rollers are rotated under the control of the control board to unload the substrate that has undergone preliminary surface treatment to the wet device as the surface treatment unit. 3 . The substrate processing apparatus according to claim 2 , wherein the blast processing unit includes a moving frame that moves with the flat plate; and the nozzle is disposed on the moving frame, and sprays dry ice particles to the layer to be removed. 4 . 4. The substrate processing apparatus according to claim 1, wherein: The dry ice supply unit includes: a carbon dioxide supply source for supplying carbon dioxide, a carrier gas supply source for supplying a carrier gas, and a cooling device for cooling carbon dioxide supplied by the carbon dioxide supply source, The substrate processing apparatus further includes a temperature control unit that detects the nozzle temperature of the spray processing unit and controls the operation of the cooling device based on the temperature detected by the nozzle.

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