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WO2018117027A1 - Dispositif de nettoyage, dispositif de correction de câblage et procédé de nettoyage - Google Patents

Dispositif de nettoyage, dispositif de correction de câblage et procédé de nettoyage Download PDF

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Publication number
WO2018117027A1
WO2018117027A1 PCT/JP2017/045331 JP2017045331W WO2018117027A1 WO 2018117027 A1 WO2018117027 A1 WO 2018117027A1 JP 2017045331 W JP2017045331 W JP 2017045331W WO 2018117027 A1 WO2018117027 A1 WO 2018117027A1
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WO
WIPO (PCT)
Prior art keywords
carbon dioxide
liquefied carbon
dioxide gas
unit
substrate
Prior art date
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Ceased
Application number
PCT/JP2017/045331
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English (en)
Japanese (ja)
Inventor
鈴木　良和
庸輔 久住
大輔 田ノ岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
V Technology Co Ltd
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Publication of WO2018117027A1 publication Critical patent/WO2018117027A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • H10P14/40—
    • H10P52/00—
    • H10W20/01—
    • H10W20/40—

Definitions

  • the present invention relates to a cleaning device, a wiring correction device including the cleaning device, and a cleaning method, and more particularly, removes deposits such as metal particles generated when a wiring pattern formed on a substrate surface is corrected. Regarding technology.
  • FPD Flexible Panel Display
  • a repair process is performed.
  • a processing apparatus disclosed in Patent Document 1 As repair processing, so-called ZAPPING processing (hereinafter referred to as ZAP processing) in which a wiring pattern is cut by a laser beam, or so-called laser CVD repair processing in which wiring connection is performed by film formation by a laser CVD (Chemical Vapor Deposition) method.
  • ZAP processing so-called ZAPPING processing
  • laser CVD repair processing in which wiring connection is performed by film formation by a laser CVD (Chemical Vapor Deposition) method.
  • laser CVD processing laser CVD processing
  • metal particles accumulate on and adhere to the substrate around the metal wiring.
  • the above-mentioned metal scraps and metal particles adhering to the substrate may cause problems such as an electronic circuit insulation failure, a defect in a post-process, a display panel non-uniformity, and the like. For this reason, it is required to reduce or remove metal scraps and metal particles on the substrate.
  • As a method of removing these metal scraps and metal particles there is a method of removing by wet cleaning.
  • the present invention has been made in view of the above-described problems, and is a cleaning device, a wiring correction device, and a cleaning device that can easily remove metal scraps and metal particles adhering to a substrate by a repair process without performing wet cleaning. It aims to provide a method.
  • an aspect of the present invention is a cleaning apparatus for a surface of a substrate on which unnecessary deposits adhere after a wiring repair process, and is liquefied toward the surface of the substrate.
  • a liquefied carbon dioxide gas injection unit that injects carbon dioxide gas to change the liquefied carbon dioxide gas into dry ice fine particles by adiabatic expansion, and a surface position and a surface of the substrate on which the dry ice fine particles injected from the liquefied carbon dioxide gas injection unit collide
  • An observation unit that allows the position of an unnecessary deposit that the dry ice fine particles collide to be identified by observing the state.
  • a dust collecting part that sucks immediately after the unnecessary adhering matter separated from the substrate due to collision with dry ice fine particles.
  • control unit that performs position control of the liquefied carbon dioxide gas injection unit so that dry ice fine particles collide with unnecessary deposits based on surface position information and surface state information from the observation unit.
  • the said liquefied carbon dioxide injection part, the said observation part, and the said dust collection part are mounted in the positioning mechanism, and the said positioning mechanism was drive-controlled by the said control part, and was injected from the said liquefied carbon dioxide injection part It is preferable that the dry ice fine particles are positioned so as to collide with unnecessary deposits.
  • an air supply path for supplying auxiliary gas injected together with the liquefied carbon dioxide gas communicates with the liquefied carbon dioxide gas injection unit.
  • an air supply unit that supplies auxiliary gas to the air supply path
  • the control unit determines whether the repair process is performed in any one of the ZAP process and the laser CVD process. It is preferable to change the delivery pressure of the supply unit.
  • a liquefied carbon dioxide cylinder for supplying liquefied carbon dioxide gas to the liquefied carbon dioxide injection unit is movably mounted on the positioning mechanism together with the liquefied carbon dioxide injection unit.
  • a liquefied carbon dioxide gas cylinder may be connected to the liquefied carbon dioxide gas injection section via a movable pressure-resistant hose having flexibility, and the liquefied carbon dioxide gas cylinder may be arranged outside the apparatus.
  • a cooling unit that cools the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide injection unit.
  • a valve is provided in the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide jet section.
  • Another aspect of the present invention is a wiring correction device, comprising the cleaning device having the above-described configuration, and a source gas unit for supplying a source gas for laser CVD processing, and a laser on a wiring formation region on the substrate. And a CVD laser oscillator for photolyzing the source gas supplied from the source gas unit, and a ZAP laser oscillator for irradiating a laser to cut the wiring on the substrate.
  • Another aspect of the present invention is a cleaning method, wherein the position of the unnecessary deposit on the substrate to which the unnecessary deposit has adhered after the wiring repair process is specified, and liquefied toward the identified position of the unnecessary deposit.
  • Carbon dioxide gas is injected, liquefied carbon dioxide gas is changed into dry ice fine particles by adiabatic expansion and collided with the unnecessary deposits, and unnecessary deposits immediately after being peeled off from the substrate are sucked and removed.
  • the liquefied carbon dioxide gas is sent out together with the auxiliary gas, and the auxiliary gas delivery pressure is changed depending on whether the repair process is performed in any one of the ZAP processing and the laser CVD processing.
  • unnecessary deposits such as metal debris and metal particles adhering to the substrate by the repair process can be easily removed without wet cleaning.
  • the present invention it is possible to reliably cause the dry ice fine particles to collide with unnecessary deposits by specifying the position to be ejected from the liquefied carbon dioxide gas ejecting section by the observation section. Further, according to the present invention, for example, unnecessary deposits can be easily removed regardless of whether the repair process is ZAP processing or laser CVD processing.
  • the unnecessary deposits that have been peeled off from the substrate can be recovered without being diffused. it can. Therefore, according to the present invention, it is not necessary to wet-clean the substrate after the cleaning process, and the time for the cleaning process can be greatly shortened.
  • the dry ice fine particles are provided by including a control unit that controls the position of the liquefied carbon dioxide gas injection unit so that the dry ice fine particles collide with the unnecessary deposit based on the surface position information and the surface state information from the observation unit. Can reliably collide with unnecessary deposits, and the cleaning time can be shortened.
  • the liquefied carbon dioxide injection unit, the observation unit, and the dust collecting unit are mounted on the positioning mechanism, and the positioning mechanism is driven and controlled by the control unit, so that the dry ice fine particles injected from the liquefied carbon dioxide injection unit are unnecessary. Since it positions so that it may collide with a kimono, a washing
  • the dust collection part is provided, the deposit
  • the liquefied carbon dioxide gas injection unit is provided with an air supply path for supplying auxiliary gas injected together with the liquefied carbon dioxide gas. Therefore, in the present invention, it is possible to adjust the blowing strength of an auxiliary gas (for example, clean dry air) containing liquefied carbon dioxide gas (dry ice fine particles). Therefore, the cleaning performance by the dry ice fine particles can be adjusted and controlled by controlling the delivery pressure of the auxiliary gas.
  • an auxiliary gas for example, clean dry air
  • liquefied carbon dioxide gas dry liquefied carbon dioxide gas
  • an air supply unit that supplies auxiliary gas to the air supply path is provided, and the control unit determines whether the repair process is performed in any one of the ZAP processing and the laser CVD processing.
  • reliable cleaning can be performed according to the state of the cleaning part.
  • a liquefied carbon dioxide gas cylinder that supplies liquefied carbon dioxide gas to the liquefied carbon dioxide gas injection unit may be mounted on the positioning mechanism so as to be movable together with the liquefied carbon dioxide gas injection unit. It is good also as a structure to which the liquefied carbon dioxide gas cylinder arrange
  • the temperature of the liquefied carbon dioxide supplied to the liquefied carbon dioxide injection section can be maintained at a low temperature by providing the cooling section for cooling the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide injection section. That is, according to the present invention, the temperature of the liquefied carbon dioxide gas supplied to the liquefied carbon dioxide gas injection unit can be set to a temperature at which it is easily changed to dry ice fine particles by adiabatic expansion. Therefore, according to the present invention, it is possible to omit the waiting time from the start of the injection of the liquefied carbon dioxide gas from the liquefied carbon dioxide injection unit to the injection of an appropriate amount of dry ice fine particles.
  • the working time of the cleaning process can be shortened, and it is possible to always inject dry ice fine particles having an appropriate injection amount.
  • the particle size of the dry ice fine particles injected from the liquefied carbon dioxide injection unit is controlled by changing the temperature of the flow path for sending the liquefied carbon dioxide gas to the liquefied carbon dioxide injection unit by the cooling unit. be able to. Therefore, according to the present invention, it is possible to efficiently remove unwanted deposits by controlling the particle size of the dry ice fine particles in accordance with the type and deposit state of unwanted deposits on the substrate.
  • the delivery amount of liquefied carbon dioxide can be adjusted by providing a valve in the flow path for sending liquefied carbon dioxide to the liquefied carbon dioxide jet. Therefore, according to the present invention, the cleaning performance with dry ice fine particles can be adjusted and controlled by controlling the amount of liquefied carbon dioxide delivered by the valve. Moreover, according to this invention, the outflow of liquefied carbon dioxide from a liquefied carbon dioxide injection part can be prevented by closing a valve at the time of standby.
  • a raw material gas unit including the above-described cleaning device and supplying a raw material gas for laser CVD processing, and a raw material supplied from the raw material gas unit by irradiating a wiring formation region on the substrate with a laser beam Moving the substrate or replacing the device by using a wiring correction device comprising a CVD laser oscillator for photolysis of gas and a ZAP laser oscillator for irradiating a laser to cut the wiring pattern on the substrate
  • a wiring correction device comprising a CVD laser oscillator for photolysis of gas and a ZAP laser oscillator for irradiating a laser to cut the wiring pattern on the substrate
  • the position of the unnecessary deposit on the substrate to which the unnecessary deposit has adhered after the wiring repair process is specified, and the liquefied carbon dioxide gas is sprayed toward the position of the unwanted deposit to insulate the liquefied carbon dioxide.
  • the present invention it is possible to reliably remove unnecessary deposits such as metal debris and metal particles attached to the substrate along with the repair process, so that an insulation failure of the electronic circuit, a defect in a subsequent process, for example, Occurrence of problems such as display unevenness of the display panel can be prevented.
  • unnecessary deposits can be easily removed regardless of whether the repair process is ZAP processing or laser CVD processing.
  • FIG. 1 is a configuration diagram showing an outline of a wiring correction device according to a first embodiment of the present invention.
  • FIG. 2 is a flowchart showing a cleaning method according to the first embodiment of the present invention.
  • FIG. 3A is an explanatory plan view showing a substrate having a wiring defect for performing a laser CVD repair process using the wiring correction apparatus according to the first embodiment of the present invention.
  • FIG. 3-2 is a plan view of the substrate showing a state where the laser CVD repair process is performed using the wiring correction apparatus according to the first embodiment of the present invention.
  • FIG. 3-3 is a plan view of the substrate showing a state in which unnecessary deposits are cleaned using the cleaning device in the wiring correction device according to the first embodiment of the present invention.
  • FIG. 4 is a configuration diagram showing an outline of a wiring correction apparatus according to the second embodiment of the present invention.
  • FIG. 5 is a configuration diagram of a cleaning device that is a main part of a wiring correction device according to a third embodiment of the present invention.
  • FIG. 1 shows a wiring correction device 1 according to a first embodiment of the present invention.
  • the wiring correction device 1 includes a cleaning device 2 and a wiring correction device main body 3. (Cleaning device)
  • the cleaning device 2 is mounted on a gantry stage 4 as a positioning mechanism.
  • the gantry stage 4 is mounted on a base (not shown), and a table 6 on which a correction substrate 5 is arranged is provided on the base.
  • the correction substrate 5 is a target for correcting the wiring using the wiring correction device main body 3.
  • a TFT substrate constituting a display device such as a liquid crystal display device, a semiconductor substrate, or the like can be applied.
  • the cleaning device 2 includes a cleaning device main body 7, a liquefied carbon dioxide gas cylinder 8A built in the cleaning device main body 7, a liquefied carbon dioxide gas delivery unit 10 connected to the liquefied carbon dioxide gas cylinder 8A via a flow path 9, A liquefied carbon dioxide injection nozzle 12 as a liquefied carbon dioxide injection section connected to the liquefied carbon dioxide delivery section 10 via a flow path 11, a positioning observation camera 13 as an observation section, and a liquefied carbon dioxide injection nozzle 12 An air supply path 14 that communicates, a CDA supply section 15 as an air supply section that supplies clean air (CDA) as an auxiliary gas to the air supply path 14, a dust collection section 16, and a dust collection section 16 that communicates with each other The air discharge path 17 and the control unit 18 are provided.
  • clean dry air (CDA) is used as the auxiliary gas, but nitrogen gas may be used.
  • the liquefied carbon dioxide injection nozzle 12 is provided at the lower part of the cleaning apparatus body 7 and protrudes obliquely downward toward the correction substrate 5 disposed on the table 6.
  • the positioning observation camera 13 is disposed above the protruding tip portion 12A of the liquefied carbon dioxide gas injection nozzle 12.
  • a suction port 16 ⁇ / b> A of the dust collecting unit 16 is disposed in the vicinity of the tip end portion 12 ⁇ / b> A of the liquefied carbon dioxide gas injection nozzle 12.
  • the liquefied carbon dioxide spray nozzle 12 is directed toward the surface of the correction substrate 5 where there is a piled up deposit (hereinafter referred to as unnecessary deposits) adhering to the vicinity of the wiring 5A after the repair processing of the wiring 5A on the correction substrate 5. Inject liquefied carbon dioxide.
  • the liquefied carbon dioxide injected from the liquefied carbon dioxide injection nozzle 12 changes into dry ice fine particles by adiabatic expansion immediately after the injection.
  • the positioning observation camera 13 observes the surface position and surface state of the correction substrate 5 on which the dry ice fine particles ejected from the liquefied carbon dioxide gas injection nozzle 12 collide, and identifies the position of unnecessary deposits on which the dry ice fine particles collide. Make it possible to do.
  • the particle size of the dry ice fine particles is adjusted to about 30 ⁇ m, but can be adjusted to 5 to 200 ⁇ m. Such a particle size is significantly smaller than that when a dry ice lump is pulverized and used, and the inner diameter of the liquefied carbon dioxide gas injection nozzle 12 can be set to the order of microns. Further, the pressure at which the dry ice fine particles collide with the unnecessary deposits can be adjusted to 0.1 to 1 MPa.
  • the dust collecting unit 16 sucks the unnecessary deposits separated from the correction substrate 5 due to the collision of the dry ice fine particles immediately after peeling.
  • the control unit 18 is originally provided in the wiring correction device main body 3 and is liquefied carbonic acid so that dry ice fine particles collide with unnecessary deposits based on surface position information and surface state information from the observation camera 13 for positioning.
  • the position of the gas injection nozzle 12 is set to be controlled.
  • the cleaning device main body 7 including the liquefied carbon dioxide spray nozzle 12, the positioning observation camera 13, and the dust collecting unit 16 is mounted on the gantry stage 4.
  • the gantry stage 4 is driven by a gantry stage drive unit 19.
  • the gantry stage drive unit 19 is driven and controlled by the control unit 18.
  • a CDA supply unit 15 for supplying clean dry air as an auxiliary gas to be injected together with the liquefied carbon dioxide gas is communicated with the liquefied carbon dioxide injection nozzle 12 via the air supply path 14.
  • the control unit 18 controls the air delivery pressure of clean dry air of the CDA supply unit 15. For this reason, in this Embodiment, the blowing intensity
  • the liquefied carbon dioxide delivery pressure of the liquefied carbon dioxide delivery unit 10 may be controlled.
  • control unit 18 performs CDA depending on whether a repair process (to be described later) performed in the wiring correction device body 3 is performed in any one of the ZAP process (cutting repair process) and the laser CVD process (laser CVD repair process).
  • the delivery pressure of the supply unit 15 can be changed.
  • the amount of liquefied carbon dioxide used per time jetted from the liquefied carbon dioxide jet nozzle 12 is about 1 g for about 3 seconds.
  • the weight of the liquefied carbon dioxide cylinder 8A is 5 kg, and the cylinder diameter is ⁇ 140 ⁇ 570 mm.
  • the weight of the liquefied carbon dioxide cylinder 8A when full is 14 kg (internal pressure 7 MPa).
  • the cylinder replacement frequency may be replaced every 10,000 corrections.
  • unnecessary and foreign deposits such as metal debris and metal particles attached on the correction substrate 5 by the repair process performed in the wiring correction device main body 3 are easily and accurately dry-cleaned. be able to.
  • the cleaning device 2 it is possible to reliably remove unnecessary deposits having a large adhesion force to the correction substrate 5 caused by laser CVD processing described later.
  • the production efficiency of an FPD including a TFT substrate can be improved.
  • unnecessary deposits attached to the correction substrate 5 along with the repair process can be surely removed, an insulation failure of an electronic circuit, a defect in a later process, a defect such as a display unevenness of a display panel, for example Can be prevented.
  • the position to be sprayed from the liquefied carbon dioxide spray nozzle 12 is specified by the positioning observation camera 13 so that the dry ice fine particles are reliably collided with the unnecessary deposits. Can do.
  • the suction port 16A of the dust collecting unit 16 is disposed in the vicinity of the distal end portion 12A of the liquefied carbon dioxide gas injection nozzle 12, unnecessary deposits peeled off from the correction substrate 5 Can be reliably captured and recovered without diffusing.
  • FIG. 2 is a flowchart of the cleaning method in the present embodiment.
  • the correction observation substrate 5 is observed with the positioning observation camera 13 as an observation unit, and the position of the unnecessary deposit is specified (step S1).
  • step S2 alignment is performed so that the outlet of the tip 12A of the liquefied carbon dioxide injection nozzle 12 as the liquefied carbon dioxide injection section is in the vicinity of the unnecessary deposit (step S2).
  • the liquefied carbon dioxide gas is mixed from the liquefied carbon dioxide jet nozzle 12 with clean dry air as an auxiliary gas and jetted, and suction is performed by the dust collecting unit 16, and unnecessary deposits peeled off from the correction substrate 5. Is sucked (step S3).
  • step S4 it is observed by the positioning observation camera 13 as an observation unit and moved so that the tip 12A of the liquefied carbon dioxide gas injection nozzle 12 corresponds to other unnecessary deposits. Thereafter, the above steps S1 to S4 may be repeated.
  • the wiring correction device 1 includes a wiring correction device main body 3 and the cleaning device 2 described above.
  • the wiring correction device main body 3 includes a source gas unit 20 that supplies a source gas for laser CVD processing, and an optical system 21.
  • the optical system 21 performs ZAPPING processing (hereinafter referred to as ZAP processing) in which a wiring pattern is cut with a laser beam, and laser CVD processing in which film connection is performed by film formation by a laser CVD method.
  • ZAP processing ZAPPING processing
  • laser CVD processing in which film connection is performed by film formation by a laser CVD method.
  • the optical system 21 is a CVD laser oscillator as a laser light source that irradiates a wiring formation region on the substrate for correction 5 with a laser to photolyze a source gas supplied from a source gas unit 20.
  • a ZAP laser oscillator 23 as a laser light source for ZAP processing
  • the optical system 21 can switch between laser CVD processing and ZAP processing by switching between the CVD laser oscillator 22 and the ZAP laser oscillator 23.
  • FIG. 3A shows a region where the correction wiring is formed, which has been aligned. In this region, the wirings 5A are disconnected.
  • the source gas is supplied from the source gas unit 20 toward the surface of the correction substrate 5, and at the same time, the CVD laser oscillator 22 is driven to emit the CVD laser.
  • the correction wiring 5B as shown in FIG. 3-2 is formed while scanning the wiring correction device body 3 so as to connect the disconnected wirings 5A shown in FIG. 3-1.
  • unnecessary deposits (metal particles) 5C accumulate around the correction wiring 5B and adhere.
  • step S1 the position is observed with the positioning observation camera 13 of the cleaning device 2, the position of a predetermined formation region of the unnecessary deposit 5C is specified (step S1), and the surface position information and the surface state information are transmitted to the control unit 18. input.
  • the control unit 18 outputs a control signal to the gantry stage drive unit 19 according to the surface position information and the surface state information to drive the gantry stage 4 and align the cleaning device 2 (step S2).
  • the liquefied carbon dioxide gas is mixed with clean dry air and ejected from the liquefied carbon dioxide gas injection nozzle 12, and at the same time, suction is performed by the dust collecting unit 16 to suck unnecessary deposits peeled off from the correction substrate 5 (above-mentioned) Step S3). Then, it is observed with the positioning observation camera 13 and moved so that the tip 12A of the liquefied carbon dioxide gas injection nozzle 12 corresponds to the formation region of the other unnecessary deposits 5C (step S4). By repeating such an operation, as shown in FIG. 3C, the unnecessary deposit 5C can be dry-cleaned.
  • FIG. 4 is a configuration diagram showing an outline of a wiring correction device 1A according to the second embodiment of the present invention.
  • the wiring correction device 1A according to the present embodiment has substantially the same configuration as the wiring correction device 1 according to the first embodiment described above.
  • a different configuration of the wiring correction device 1A according to the present embodiment from the wiring correction device 1 according to the first embodiment is that the liquefied carbon dioxide cylinder 8A is not mounted on the cleaning device body 7.
  • a large liquefied carbon dioxide gas cylinder 8B is disposed outside the device, and a flexible pressure-resistant hose having flexibility in the flow path 9 communicating with the liquefied carbon dioxide gas delivery unit 10 of the cleaning device 2A. 9A is connected.
  • the amount of liquefied carbon dioxide used per time injected from the liquefied carbon dioxide injection nozzle 12 is about 1 g for about 3 seconds.
  • the weight of the liquefied carbon dioxide cylinder 8A when full is 30 kg.
  • the cylinder replacement frequency may be replaced every 30,000 corrections.
  • FIG. 5 is a configuration diagram of a cleaning device 2B, which is a main part of a wiring correction device according to the third embodiment of the present invention.
  • the cleaning device 2B in the present embodiment includes a cooling unit 30 in the cleaning device body 7.
  • the cooling unit 30 is set to cool the flow path 11 between the liquefied carbon dioxide gas delivery unit 10 and the liquefied carbon dioxide gas injection nozzle 12.
  • a Stirling refrigerator that is a regenerative refrigerator is used as the cooling unit 30.
  • the cooling unit 30 is not limited to this, and various cooling means such as a cooling system using a Peltier element can be applied.
  • the cooling unit 30 is connected to the control unit 18 and is driven and controlled by receiving a control signal from the control unit 18.
  • the cooling unit 30 is set so that the temperature can be adjusted based on a control signal from the control unit 18.
  • a valve 31 is provided in the flow path 11 between the cooling unit 30 and the liquefied carbon dioxide injection nozzle 12.
  • various opening / closing means such as an air control valve capable of opening / closing control by air control and an electromagnetic valve can be applied.
  • the valve 31 is connected to the control unit 18 and is controlled to open and close in response to a control signal from the control unit 18.
  • the other configuration of the cleaning device 2B is the same as that of the cleaning device 2A of the second embodiment.
  • the other configuration according to the present embodiment is the same as that of the wiring correction device 1A of the second embodiment.
  • the production efficiency of the dry ice fine particles injected from the liquefied carbon dioxide injection nozzle 12 depends on the temperature of the flow path 11. Normally, the cleaning device 2B is used in a room temperature environment. Therefore, in order to inject the amount of dry ice necessary for cleaning unnecessary deposits adhering to the surface of the correction substrate 5, a predetermined time is required from the start of injection until the flow path 11 cools to some extent. In the present embodiment, since the cooling unit 30 that can cool the flow path 11 in advance is provided, dry ice fine particles can be injected immediately without waiting for a certain time from the start of injection.
  • the particle size of the dry ice fine particles ejected from the liquefied carbon dioxide jet nozzle 12 varies depending on the temperature, flow rate, etc. of the liquefied carbon dioxide reaching the liquefied carbon dioxide jet nozzle 12.
  • the cooling unit 30 can adjust the cooling temperature of the flow path 11 based on a control signal from the control unit 18. For this reason, it is also possible to control the particle size of the dry ice fine particles injected from the liquefied carbon dioxide injection nozzle 12.
  • the particle size of the dry ice fine particles can also be controlled. It becomes possible to cope. Therefore, in this embodiment, for example, either the cooling unit 30 or the valve 31 is controlled or both are combined depending on whether the repair process is performed in any of the ZAP process and the laser CVD process. Can be adjusted to an appropriate detergency.
  • each of the above-described embodiments there is one dust collection unit 16, but a plurality of dust collection units 16 may be arranged.
  • clean dry air is used as the auxiliary gas, but the present invention is not limited to this.
  • the wiring correction device 1 is configured to move in the XY axis direction with respect to the correction substrate 5, but the correction substrate 5 side is XY axis relative to the wiring correction device 1.
  • the structure which moves to a direction may be sufficient.

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Cleaning In General (AREA)

Abstract

Dispositif de nettoyage comprenant : une buse de projection de dioxyde de carbone liquéfié (12) qui projette du dioxyde de carbone liquéfié vers une surface d'un substrat auquel un dépôt indésirable a été fixé après un processus de réparation de câblage, de façon à convertir le dioxyde de carbone liquéfié en microparticules de glace carbonique par expansion adiabatique ; et une caméra d'observation de positionnement (13) pour observer une position de surface et un état de surface du substrat avec lequel les microparticules de glace carbonique projetées par la buse d'éjection de gaz de dioxyde de carbone liquéfié (12) entrent en collision, ce qui permet d'identifier la position du dépôt indésirable avec lequel les microparticules de glace carbonique entrent en collision.
PCT/JP2017/045331 2016-12-20 2017-12-18 Dispositif de nettoyage, dispositif de correction de câblage et procédé de nettoyage Ceased WO2018117027A1 (fr)

Applications Claiming Priority (2)

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JP2016246506 2016-12-20
JP2016-246506 2016-12-20

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WO2018117027A1 true WO2018117027A1 (fr) 2018-06-28

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021107436A1 (fr) * 2019-11-29 2021-06-03 김호진 Système et procédé de nettoyage automatisé utilisant de la glace carbonique
CN113169062A (zh) * 2018-11-30 2021-07-23 东京毅力科创株式会社 基板清洗方法、处理容器清洗方法及基板处理装置
CN119327807A (zh) * 2024-11-22 2025-01-21 国能神东煤炭集团有限责任公司 钢丝绳在线清洗方法及钢丝绳清洗装置
WO2025100680A1 (fr) * 2023-11-06 2025-05-15 주식회사 코윈디에스티 Appareil de nettoyage de tranche

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JP2003031362A (ja) * 2001-07-16 2003-01-31 Tdk Corp 有機ｅｌ素子の製造方法および有機ｅｌ素子の製造装置
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JP2003031362A (ja) * 2001-07-16 2003-01-31 Tdk Corp 有機ｅｌ素子の製造方法および有機ｅｌ素子の製造装置
US7276385B1 (en) * 2003-11-24 2007-10-02 Kovio, Inc. Methods of laser repairing a circuit, compositions and equipment for such methods, and structures formed from such methods

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113169062A (zh) * 2018-11-30 2021-07-23 东京毅力科创株式会社 基板清洗方法、处理容器清洗方法及基板处理装置
WO2021107436A1 (fr) * 2019-11-29 2021-06-03 김호진 Système et procédé de nettoyage automatisé utilisant de la glace carbonique
WO2025100680A1 (fr) * 2023-11-06 2025-05-15 주식회사 코윈디에스티 Appareil de nettoyage de tranche
CN119327807A (zh) * 2024-11-22 2025-01-21 国能神东煤炭集团有限责任公司 钢丝绳在线清洗方法及钢丝绳清洗装置

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