[go: up one dir, main page]

WO2018055880A1 - Filtre de coupure proche infrarouge, dispositif d'imagerie à semi-conducteurs, module de caméra et dispositif d'affichage d'image - Google Patents

Filtre de coupure proche infrarouge, dispositif d'imagerie à semi-conducteurs, module de caméra et dispositif d'affichage d'image Download PDF

Info

Publication number
WO2018055880A1
WO2018055880A1 PCT/JP2017/025526 JP2017025526W WO2018055880A1 WO 2018055880 A1 WO2018055880 A1 WO 2018055880A1 JP 2017025526 W JP2017025526 W JP 2017025526W WO 2018055880 A1 WO2018055880 A1 WO 2018055880A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
cut filter
infrared cut
resin film
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/025526
Other languages
English (en)
Japanese (ja)
Inventor
昂広 大河原
敬史 川島
啓佑 有村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2018540650A priority Critical patent/JP6717955B2/ja
Publication of WO2018055880A1 publication Critical patent/WO2018055880A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B11/00—Filters or other obturators specially adapted for photographic purposes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Definitions

  • the present invention relates to a near-infrared cut filter, a solid-state imaging device, a camera module, and an image display device.
  • CCD charge coupled devices
  • CMOS complementary metal oxide semiconductors
  • Patent Document 1 describes that a near-infrared cut filter is produced using a near-infrared cut filter-forming resin composition containing a transparent resin and an absorbent having a maximum absorption wavelength at a wavelength of 600 to 800 nm. Yes.
  • a norbornene-based resin is used as a transparent resin.
  • the inventor examined a near-infrared cut filter formed by using a composition containing an infrared absorber and a resin.
  • a near-infrared cut filter is obtained. It has been found that abnormalities such as cracks, cloudiness, and peeling may occur in the filter.
  • the durability in the temperature difference of the near-infrared cut filter is also referred to as thermal shock resistance.
  • an object of the present invention is to provide a near infrared cut filter excellent in thermal shock resistance.
  • Another object of the present invention is to provide a solid-state imaging device, a camera module, and an image display device having a near-infrared cut filter excellent in thermal shock resistance.
  • the present invention provides the following. ⁇ 1> having a resin film containing a copper complex and a resin;
  • the resin film has a tensile modulus at 25 ° C. of 0.5 to 10 GPa, and has a loss tangent tan ⁇ peak of 80 to 160 ° C. in dynamic viscoelastic properties measured under conditions of a frequency of 1 Hz and a heating rate of 5 ° C./min.
  • a near-infrared cut filter having a peak half-value width of 1 to 50 ° C.
  • ⁇ 2> The near-infrared cut according to ⁇ 1>, wherein the average value of the transmittance of light irradiated from the direction perpendicular to the resin film surface of the infrared cut filter is 5% or less in the wavelength range of 800 to 1000 nm. filter.
  • ⁇ 3> The near-infrared cut filter according to ⁇ 1> or ⁇ 2>, wherein an average reflectance of the near-infrared cut filter is 20% or less in a wavelength range of 800 to 1000 nm.
  • ⁇ 4> The near-infrared cut filter according to any one of ⁇ 1> to ⁇ 3>, wherein the resin film has a linear expansion coefficient of 75 to 200 ppm / ° C.
  • ⁇ 5> The near-infrared cut filter according to any one of ⁇ 1> to ⁇ 4>, wherein the resin film has a Vickers hardness at 25 ° C. of 5 to 30.
  • ⁇ 6> The near-infrared cut filter according to any one of ⁇ 1> to ⁇ 5>, wherein the resin film has a tensile strength at 25 ° C. of 20 to 60 MPa.
  • ⁇ 7> The near infrared cut filter according to any one of ⁇ 1> to ⁇ 6>, wherein the cross-linking group value of the resin film is 1 to 4 mmol / g.
  • the crosslinkable group value of the resin having a crosslinkable group is 0.5 to 4 mmol / g.
  • the crosslinkable group is an alkoxysilyl group, and the Si value of the resin having a crosslinkable group is 0.5 to 4 mmol / g.
  • ⁇ 11> The near-infrared cut filter according to any one of ⁇ 1> to ⁇ 10>, wherein the resin film includes a crosslinked product derived from a monomer having a crosslinkable group.
  • ⁇ 12> The near-infrared cut filter according to ⁇ 11>, wherein the monomer having a crosslinkable group has a crosslinking group value of 5 to 20 mmol / g. ⁇ 13>
  • ⁇ 14> The monomer having a crosslinkable group according to any one of ⁇ 11> to ⁇ 13>, wherein two Si atoms in one molecule are bonded to each other with 2 to 10 atoms separated from each other.
  • ⁇ 15> The near infrared cut filter according to any one of ⁇ 11> to ⁇ 14>, wherein the crosslinkable group is an alkoxysilyl group, and the Si value of the monomer having a crosslinkable group is 5 to 20 mmol / g. . ⁇ 16>
  • ⁇ 17> The near-infrared cut filter according to any one of ⁇ 1> to ⁇ 16>, wherein the resin film is a self-supporting film.
  • a solid-state imaging device having the near-infrared cut filter according to any one of ⁇ 1> to ⁇ 17>.
  • a camera module having the near-infrared cut filter according to any one of ⁇ 1> to ⁇ 17>.
  • An image display device having the near infrared cut filter according to any one of ⁇ 1> to ⁇ 17>.
  • a near-infrared cut filter excellent in thermal shock resistance can be provided.
  • a solid-state imaging device, a camera module, and an image display device having a near-infrared cut filter excellent in thermal shock resistance can be provided.
  • Me in the chemical formula represents a methyl group
  • Et represents an ethyl group
  • Pr represents a propyl group
  • Bu represents a butyl group
  • Ph represents a phenyl group.
  • near-infrared light refers to light (electromagnetic wave) having a wavelength region of 700 to 2500 nm.
  • the total solid content refers to the total mass of components obtained by removing the solvent from all components of the composition.
  • a weight average molecular weight and a number average molecular weight are defined as a polystyrene conversion value by a gel permeation chromatography (GPC) measurement.
  • the near-infrared cut filter of the present invention has a resin film containing a copper complex and a resin, and the resin film has a tensile elastic modulus at 25 ° C. of 0.5 to 10 GPa and a dynamic viscosity under a frequency of 1 Hz.
  • the loss tangent tan ⁇ peak in the elastic characteristics is in the range of 80 to 160 ° C., and the half width of the peak is 1 to 50 ° C.
  • the thermal shock resistance of the resin film is good, and even in an environment with a large temperature difference, cracks and the like are unlikely to occur. It is assumed that the reason why such an effect is obtained is as follows. First, in order to improve the thermal shock resistance of the resin film, the present inventor considered that it is desirable to impart appropriate flexibility while increasing the strength of the resin film. That is, the resin film contracts at a low temperature and expands at a high temperature. For this reason, in an environment having a large temperature difference, the resin film is repeatedly contracted and expanded.
  • the hardness of the resin film is too high, the flexibility tends to be insufficient, but if the flexibility of the resin film is insufficient, the strain accompanying the shrinkage and expansion of the resin film tends to remain in the resin film, causing cracks and the like. It is considered easy. On the other hand, if the hardness is too low, it is considered that the resin film cannot withstand the strain generated as the resin film contracts or expands, and cracks are likely to occur. On the other hand, it is known that the half width of the peak of the loss tangent tan ⁇ in the resin film is related to the uniformity of crosslinking in the resin film.
  • the crosslinking tends to progress uniformly in the entire resin film. Since the crosslinking of the resin film proceeds almost uniformly, the mechanical strength of the resin film tends to be good and the hardness tends to be high.
  • the tensile modulus of elasticity at 25 ° C. of the resin film is 0.5 to 10 GPa, and the resin film has a peak of the loss tangent tan ⁇ within the range of 80 to 160 ° C. It is presumed that the balance between hardness and flexibility was good and the thermal shock resistance of the resin film could be improved.
  • the resin film having the mechanical properties described above also has a characteristic as a self-supporting film.
  • a support body can also be abbreviate
  • Various functional layers may be formed on the surface of the resin film. Since the support can be omitted, the near-infrared cut filter can be made thinner than before.
  • the self-supporting film refers to a film that is self-supporting and means a film that can maintain its shape as a film even when no support is present. More specifically, it means a membrane that can maintain its shape by the strength of the membrane against the vertically downward force generated by the weight of the membrane.
  • the mechanical properties of the resin film may be achieved by any means, but in the production of the resin film, the type, content, and film forming conditions (for example, drying conditions) of components such as the resin of the near-infrared absorbing composition , Curing conditions, adjustment of crosslinking rate) and the like can be appropriately adjusted.
  • the type, content, and film forming conditions for example, drying conditions
  • components such as the resin of the near-infrared absorbing composition , Curing conditions, adjustment of crosslinking rate) and the like can be appropriately adjusted.
  • a resin film is produced using a near-infrared absorbing composition containing a resin having a crosslinkable group (preferably alkoxysilyl group) and / or a monomer having a crosslinkable group (preferably alkoxysilyl group).
  • a resin having a crosslinkable group preferably alkoxysilyl group
  • a monomer having a crosslinkable group preferably alkoxysilyl group
  • the near-infrared absorbing composition preferably contains 1 to 30 parts by mass of the monomer having a crosslinkable group with respect to 100 parts by mass of the resin having a crosslinkable group, and preferably 3 to 20 parts by mass.
  • the content is more preferably 5 to 15 parts by mass. It is also preferable that the crosslinking rate of the resin film be 50 to 90% by appropriately adjusting the drying temperature and curing conditions of the near-infrared absorbing composition.
  • the crosslinking rate is the number of crosslinked groups / total number of crosslinked groups, and can be measured by a method such as NMR (nuclear magnetic resonance).
  • the temperature at which the peak of the loss tangent tan ⁇ appears in the resin film can be adjusted by the type of resin or monomer.
  • the peak temperature can be increased by using a resin or monomer having a high glass transition temperature or using a resin or monomer having a high crosslinking group value.
  • peak temperature can be lowered
  • the half width of the peak can be adjusted by a method such as changing the ratio of the resin and the monomer.
  • the half width of the peak can be widened, and by setting the amount of resin relative to the monomer close to the appropriate point, the half width of the peak can be reduced.
  • the tensile modulus of elasticity of the resin film can be adjusted by the type of resin or monomer.
  • the tensile elastic modulus of the resin film can be increased by using a resin or monomer having a high glass transition temperature, or using a resin or monomer having a high cross-linking group value.
  • the said tensile elasticity modulus of a resin film can be lowered
  • the tensile elastic modulus of the resin film at 25 ° C. is 0.5 to 20 GPa, preferably 1.0 to 3.0 GPa.
  • the lower limit is preferably 1.1 GPa or more, more preferably 1.2 GPa or more, and further preferably 1.3 GPa or more.
  • the upper limit is preferably 2.9 GPa or less, more preferably 2.5 GPa or less, and even more preferably 2.0 GPa or less. According to this aspect, the thermal shock resistance of the resin film can be improved. Furthermore, the peelability of the resin film from the support can be improved.
  • the peak of the loss tangent tan ⁇ of the resin film is in the range of 80 to 160 ° C., preferably in the range of 85 to 150 ° C., and in the range of 90 to 140 ° C. More preferably.
  • the half width of the peak is preferably 5 to 60 ° C., more preferably 8 to 50 ° C., and further preferably 10 to 40 ° C. According to this aspect, the thermal shock resistance of the resin film can be improved. Furthermore, the peelability of the resin film from the support can be improved.
  • the resin film preferably has a linear expansion coefficient of 75 to 200 ppm / ° C.
  • the lower limit is preferably 76 ppm / ° C. or higher, more preferably 80 ppm / ° C. or higher, and still more preferably 85 ppm / ° C. or higher.
  • the upper limit is preferably 190 ppm / ° C. or less, more preferably 150 ppm / ° C. or less, and further preferably 120 ppm / ° C. or less.
  • the thermal shock resistance of the resin film can be improved.
  • the peelability of the resin film from the support can be improved.
  • the value of the linear expansion coefficient of the resin film is a value in the temperature range of ⁇ 20 to 70 ° C.
  • the Vickers hardness of the resin film at 25 ° C. is preferably 5 to 30.
  • the lower limit is preferably 5 or more, more preferably 10 or more, and still more preferably 15 or more.
  • the upper limit is preferably 30 or less, more preferably 25 or less, and still more preferably 20 or less. According to this aspect, the thermal shock resistance of the resin film can be improved. Furthermore, the peelability of the resin film from the support can be improved.
  • the tensile strength of the resin film at 25 ° C. is preferably 20 to 60 MPa.
  • the lower limit is preferably 21 MPa or more, more preferably 25 MPa or more, and further preferably 30 MPa or more.
  • the upper limit is preferably 55 MPa or less, more preferably 50 MPa or less, and still more preferably 40 MPa or less.
  • the thermal shock resistance of the resin film can be improved.
  • the peelability of the resin film from the support can be improved.
  • the above-mentioned physical property values of the resin film are values measured by the method described in Examples described later.
  • the cross-linking group value of the resin film is preferably 0.5 to 4 mmol / g.
  • the upper limit of the Si value of the resin film is preferably 3.5 mmol / g or less, more preferably 3 mmol / g or less, and still more preferably 2 mmol / g or less.
  • the lower limit of the Si value of the resin film is preferably 0.6 mmol / g or more, more preferably 0.8 mmol / g or more, and still more preferably 1 mmol / g or more. If the Si value of the resin film is in the above range, the thermal shock resistance of the resin film is good.
  • the cross-linking group value is an equivalent amount of the cross-linking group contained in 1 g of the resin, and the cross-linking group value can be measured by a method such as titration.
  • the content of the copper complex in the resin film is preferably 5 to 90% by mass.
  • the lower limit is preferably 10% by mass or more, more preferably 15% by mass or more, and still more preferably 20% by mass or more.
  • the upper limit is preferably 70% by mass or less, more preferably 60% by mass or less, and still more preferably 50% by mass or less. Details of the copper complex will be described later.
  • a copper complex has the compound which has 4 or 5 coordination site
  • the resin film preferably contains a cross-linked product derived from a resin having a crosslinkable group and / or a cross-linked product derived from a monomer having a crosslinkable group, and is derived from a resin having a crosslinkable group More preferably, a crosslinked product derived from a monomer having a crosslinkable group is included.
  • the crosslinkable group which the above-mentioned resin and monomer have is an alkoxysilyl group. Details of the resin having a crosslinkable group and the monomer having a crosslinkable group will be described later.
  • the content of the resin is preferably 30 to 90% by mass.
  • the lower limit is preferably 35% by mass or more, more preferably 40% by mass or more, and still more preferably 50% by mass or more.
  • the upper limit is preferably 85% by mass or less, more preferably 80% by mass or less, and still more preferably 70% by mass or less.
  • the total amount of the resin in the resin film (including a crosslinked product derived from a resin having a crosslinkable group) and a component derived from a monomer having a crosslinkable group (uncrosslinked monomer and crosslinked product) is 35 to 95%.
  • the lower limit is preferably 40% by mass or more, more preferably 45% by mass or more, and still more preferably 55% by mass or more.
  • the upper limit is preferably 90% by mass or less, more preferably 85% by mass or less, and still more preferably 80% by mass or less.
  • the resin film in the near-infrared cut filter of the present invention preferably contains two or more types of copper complexes. According to this aspect, a near-infrared cut filter having excellent infrared shielding properties can be obtained.
  • the average value of the transmittance of light irradiated from the direction perpendicular to the resin film surface of the near-infrared cut filter is preferably 20% or less. 15% or less, more preferably 10% or less, still more preferably 5% or less, and particularly preferably 1% or less.
  • the transmittance of light irradiated from the direction perpendicular to the resin film surface of the near-infrared cut filter is preferably 20% or less over the entire wavelength range of 800 to 1000 nm.
  • the average value of the transmittance of light irradiated from the direction perpendicular to the resin film surface of the near-infrared cut filter is 0% or more. preferable. According to this aspect, a near-infrared cut filter having excellent infrared shielding properties can be obtained.
  • the average reflectance in the wavelength range of 800 to 1000 nm is preferably 20% or less, preferably 10% or less, and more preferably 5% or less.
  • the near-infrared cut filter of the present invention has a reflectance of preferably 20% or less, more preferably 10% or less, and even more preferably 5% or less over the entire wavelength range of 800 to 1000 nm. .
  • the near-infrared cut filter of the present invention preferably has an average reflectance of 0% or more in the wavelength range of 800 to 1000 nm. According to this aspect, a near-infrared cut filter having a wide viewing angle and excellent infrared shielding properties can be obtained.
  • the reflectance is a value measured using U-4100 (manufactured by Hitachi High-Technologies Corporation), setting the surface normal direction of the near-infrared cut filter to 0 °, and setting the incident angle to 5 °.
  • the transmittance of light irradiated from the direction perpendicular to the resin film surface of the near-infrared cut filter satisfies at least one of the following conditions (1) to (9): It is more preferable that all the following conditions (1) to (8) are satisfied, and it is more preferable that all the conditions (1) to (9) are satisfied.
  • the transmittance at a wavelength of 400 nm is preferably 80% or more, more preferably 90% or more, still more preferably 92% or more, and particularly preferably 95% or more.
  • the transmittance at a wavelength of 450 nm is preferably 80% or more, more preferably 90% or more, still more preferably 92% or more, and particularly preferably 95% or more.
  • the transmittance at a wavelength of 500 nm is preferably 80% or more, more preferably 90% or more, still more preferably 92% or more, and particularly preferably 95% or more.
  • the transmittance at a wavelength of 550 nm is preferably 80% or more, more preferably 90% or more, still more preferably 92% or more, and particularly preferably 95% or more.
  • the transmittance at a wavelength of 700 nm is preferably 20% or less, more preferably 15% or less, further preferably 10% or less, and particularly preferably 5% or less.
  • the transmittance at a wavelength of 750 nm is preferably 20% or less, more preferably 15% or less, further preferably 10% or less, and particularly preferably 5% or less.
  • the transmittance at a wavelength of 800 nm is preferably 20% or less, more preferably 15% or less, further preferably 10% or less, and particularly preferably 5% or less.
  • the transmittance at a wavelength of 850 nm is preferably 20% or less, more preferably 15% or less, further preferably 10% or less, and particularly preferably 5% or less.
  • the transmittance at a wavelength of 900 nm is preferably 20% or less, more preferably 15% or less, further preferably 10% or less, and particularly preferably 5% or less.
  • the near-infrared cut filter of the present invention preferably has a transmittance of 85% or more, more preferably 90% or more, and still more preferably 95% or more in the entire wavelength range of 400 to 550 nm. . The higher the transmittance in the visible region, the better.
  • the thickness of the resin film can be appropriately selected according to the purpose.
  • 500 ⁇ m or less is preferable, 300 ⁇ m or less is more preferable, 250 ⁇ m or less is further preferable, and 200 ⁇ m or less is particularly preferable.
  • the lower limit of the thickness of the resin film is preferably 0.1 ⁇ m or more, more preferably 0.2 ⁇ m or more, and more preferably 0.5 ⁇ m or more.
  • the absorbance change rate at a wavelength of 400 nm represented by the following formula is preferably 10% or less, 6% More preferably, it is more preferably 3% or less. If the rate of change in absorbance is within the above range, a near-infrared cut filter having excellent heat resistance and suppressed coloring due to heating can be obtained.
  • Absorbance change rate at a wavelength of 400 nm (%)
  • the near-infrared cut filter of the present invention has an absorbance change rate of 10% at a wavelength of 400 nm represented by the following formula when the moisture resistance test is performed by leaving it in an environment of 85 ° C. and a relative humidity of 85% for 500 hours. Is preferably 6% or less, more preferably 3% or less.
  • Change rate of absorbance at wavelength 400 nm (%)
  • the near-infrared cut filter of the present invention has a change rate of absorbance at a wavelength of 400 nm represented by the following formula of 10% or less when subjected to a low temperature resistance test by standing for 500 hours in an environment of ⁇ 40 ° C. Preferably, it is 6% or less, more preferably 3% or less. When the absorbance change rate is in the above range, a near-infrared cut filter excellent in low temperature resistance can be obtained.
  • Absorbance change rate at a wavelength of 400 nm (%)
  • the near-infrared cut filter of the present invention may have a functional layer such as a dielectric multilayer film or an ultraviolet absorption layer in addition to the resin film described above. These functional layers may be formed on the resin layer.
  • a near infrared cut filter further includes a dielectric multilayer film, a near infrared cut filter excellent in infrared shielding properties can be easily obtained.
  • it can be set as the near-infrared cut filter excellent in ultraviolet-shielding property because a near-infrared cut filter has an ultraviolet absorption layer further.
  • the ultraviolet absorbing layer for example, the absorbing layer described in paragraph Nos. 0040 to 0070 and 0119 to 0145 of International Publication No.
  • WO2015 / 099060 can be referred to, and the contents thereof are incorporated in the present specification.
  • the description of paragraph numbers 0255 to 0259 of JP 2014-41318 A can be referred to, and the contents thereof are incorporated in the present specification.
  • the near-infrared cut filter of the present invention since the resin film itself has a self-supporting property (self-supporting property), the near-infrared cut filter of the present invention may not have a support. That is, the support can be optionally omitted.
  • the near-infrared cut filter of the present invention can be used for various devices such as a solid-state imaging device such as a CCD (Charge Coupled Device) and a CMOS (Complementary Metal Oxide Semiconductor), an infrared sensor, and an image display device.
  • a solid-state imaging device such as a CCD (Charge Coupled Device) and a CMOS (Complementary Metal Oxide Semiconductor)
  • an infrared sensor and an image display device.
  • the near-infrared absorbing composition contains a copper complex.
  • a copper complex the complex of copper and the compound (ligand) which has a coordination site
  • part with respect to copper the coordination site
  • the copper complex may have two or more ligands. When having two or more ligands, the respective ligands may be the same or different.
  • the copper complex is exemplified by 4-coordination, 5-coordination, and 6-coordination, and 4-coordination and 5-coordination are more preferable, and 5-coordination is more preferable.
  • Such a copper complex is stable in shape and excellent in complex stability.
  • the copper complex is also preferably a copper complex other than the phthalocyanine copper complex.
  • the phthalocyanine copper complex is a copper complex having a compound having a phthalocyanine skeleton as a ligand.
  • a compound having a phthalocyanine skeleton has a planar structure in which a ⁇ -electron conjugated system spreads throughout the molecule.
  • the phthalocyanine copper complex absorbs light at the ⁇ - ⁇ * transition.
  • the ligand compound In order to absorb light in the infrared region through the ⁇ - ⁇ * transition, the ligand compound must have a long conjugated structure. However, when the conjugated structure of the ligand is lengthened, the visible transparency tends to decrease.
  • the copper complex is preferably a copper complex having a compound having no maximum absorption wavelength in the wavelength region of 400 to 600 nm as a ligand.
  • a copper complex having a compound that does not have a maximum absorption wavelength in the wavelength region of 400 to 600 nm as a ligand has an absorption in the visible region (for example, a wavelength region of 400 to 600 nm), which is preferable from the viewpoint of visible transparency.
  • Examples of the compound having a maximum absorption wavelength in the wavelength region of 400 to 600 nm include a compound having a long conjugated structure and large absorption of light of a ⁇ - ⁇ * transition. Specific examples include compounds having a phthalocyanine skeleton.
  • the copper complex can be obtained, for example, by mixing and reacting a compound (ligand) having a coordination site for copper with a copper component (copper or a compound containing copper).
  • the compound (ligand) having a coordination site for copper may be a low molecular compound or a polymer. Both can be used together.
  • the copper component is preferably a compound containing divalent copper.
  • a copper component may use only 1 type and may use 2 or more types.
  • copper oxide or copper salt can be used.
  • the copper salt include copper carboxylate (eg, copper acetate, copper ethyl acetoacetate, copper formate, copper benzoate, copper stearate, copper naphthenate, copper citrate, copper 2-ethylhexanoate), copper sulfonate (For example, copper methanesulfonate), copper phosphate, phosphate copper, phosphonate copper, phosphonate copper, phosphinate, amide copper, sulfonamido copper, imide copper, acylsulfonimide copper, bissulfonimide Copper, methido copper, alkoxy copper, phenoxy copper, copper hydroxide, copper carbonate, copper sulfate, copper nitrate, copper perchlorate, copper fluoride, copper chloride
  • the copper complex is preferably a compound having a maximum absorption wavelength in the wavelength range of 700 to 1200 nm.
  • the maximum absorption wavelength of the copper complex is more preferably in the wavelength range of 720 to 1200 nm, and still more preferably in the wavelength range of 800 to 1100 nm.
  • the maximum absorption wavelength of the copper complex can be measured using, for example, Cary 5000 UV-Vis-NIR (Spectrophotometer manufactured by Agilent Technologies).
  • the molar extinction coefficient at the maximum absorption wavelength in the above-described wavelength region of the copper complex is preferably 120 (L / mol ⁇ cm) or more, more preferably 150 (L / mol ⁇ cm) or more, and 200 (L / mol ⁇ cm).
  • an upper limit does not have limitation in particular, For example, it can be 30000 (L / mol * cm) or less. If the molar extinction coefficient of the copper complex is 100 (L / mol ⁇ cm) or more, even a thin film can be used as a near-infrared cut filter having excellent infrared shielding properties.
  • the gram extinction coefficient at a wavelength of 800 nm of the copper complex is preferably 0.11 (L / g ⁇ cm) or more, more preferably 0.15 (L / g ⁇ cm) or more, and 0.24 (L / g ⁇ cm). The above is more preferable.
  • the molar extinction coefficient and gram extinction coefficient of the copper complex are obtained by dissolving the copper complex in a measurement solvent to prepare a solution having a concentration of 1 g / L, and measuring the absorption spectrum of the solution in which the copper complex is dissolved. Can be obtained.
  • UV-1800 wavelength region 200 to 1100 nm
  • Cary 5000 wavelength region 200 to 1300 nm
  • the measurement solvent include water, N, N-dimethylformamide, propylene glycol monomethyl ether, 1,2,4-trichlorobenzene, and acetone.
  • a solvent capable of dissolving the copper complex to be measured is selected and used from the measurement solvents described above.
  • dissolved means a state where the solubility of the copper complex with respect to 100 g of a solvent at 25 ° C. exceeds 0.01 g (0.01 g / 100 g Solvent).
  • the molar extinction coefficient and gram extinction coefficient of the copper complex are preferably values measured using any one of the above-described measurement solvents, and more preferably values of propylene glycol monomethyl ether. .
  • a copper complex represented by the formula (Cu-1) can be used as the copper complex.
  • This copper complex is a copper complex in which a ligand L is coordinated to copper as a central metal, and copper is usually divalent copper.
  • This copper complex can be obtained, for example, by reacting a compound serving as the ligand L or a salt thereof with a copper component.
  • Cu (L) n1 ⁇ (X) n2 formula (Cu-1) In the above formula, L represents a ligand coordinated to copper, and X represents a counter ion. n1 represents an integer of 1 to 4. n2 represents an integer of 0 to 4.
  • X represents a counter ion.
  • the copper complex may become a cation complex or an anion complex in addition to a neutral complex having no charge.
  • counter ions are present as necessary to neutralize the charge of the copper complex.
  • the counter ion is a negative counter ion (counter anion), for example, an inorganic anion or an organic anion may be used.
  • hydroxide ion, halogen anion for example, fluoride ion, chloride ion, bromide ion, iodide ion, etc.
  • substituted or unsubstituted alkylcarboxylate ion acetate ion, trifluoro ion
  • substituted or unsubstituted aryl carboxylate ion substituted or unsubstituted alkyl sulfonate ion (methane sulfonate ion, trifluoromethane sulfonate ion, etc.) substituted or unsubstituted aryl Sulfonate ion (eg, p-toluenesulfonate ion, p-chlorobenzenesulfonate ion, etc.), aryl disulfonate
  • the counter anion is preferably a low nucleophilic anion.
  • the low nucleophilic anion is an anion formed by dissociating a proton from an acid having a low pKa, generally called a super acid.
  • the definition of superacid differs depending on the literature, but is a general term for acids having a lower pKa than methanesulfonic acid.
  • Org. Chem. The structure described in 2011, 76, 391-395 Equilibrium Acids of Super Acids is known.
  • the pKa of the low nucleophilic anion is, for example, preferably ⁇ 11 or less, and preferably ⁇ 11 to ⁇ 18. pKa is, for example, J.P. Org. Chem.
  • the pKa value in the present specification is pKa in 1,2-dichloroethane unless otherwise specified.
  • the counter anion is a low nucleophilic anion, the decomposition reaction of the copper complex or the resin hardly occurs, and the heat resistance is good.
  • Low nucleophilic anions include tetrafluoroborate ion, tetraarylborate ion (including aryl substituted with halogen atom or fluoroalkyl group), hexafluorophosphate ion, imide ion (substituted with acyl group or sulfonyl group) Amides), methide ions (including methides substituted with acyl groups or sulfonyl groups), tetraarylborate ions (including aryls substituted with halogen atoms or fluoroalkyl groups), imide ions (including sulfonyl groups) And substituted amides) and methide ions (including methides substituted with sulfonyl groups) are particularly preferred.
  • the counter anion is preferably a halogen anion, carboxylate ion, sulfonate ion, borate ion, sulfonate ion, or imide ion.
  • Specific examples include chloride ion, bromide ion, iodide ion, acetate ion, trifluoroacetate ion, formate ion, phosphate ion, hexafluorophosphate ion, p-toluenesulfonate ion, tetrafluoroborate ion, tetrakis ( Pentafluorophenyl) borate ion, N, N-bis (fluorosulfonyl) imide ion, bis (trifluoromethanesulfonyl) imide ion, bis (nonafluorobutanesulfonyl) imide ion, nonafluoro-N-[(
  • the counter ion is a positive counter ion (counter cation), for example, inorganic or organic ammonium ion (for example, tetraalkylammonium ion such as tetrabutylammonium ion, triethylbenzylammonium ion, pyridinium ion, etc.), phosphonium ion (for example, , Tetraalkylphosphonium ions such as tetrabutylphosphonium ion, alkyltriphenylphosphonium ions, triethylphenylphosphonium ions, etc.), alkali metal ions or protons.
  • the counter ion may be a metal complex ion (for example, a copper complex ion).
  • the ligand L is a compound having a coordination site with respect to copper, and is selected from a coordination site that coordinates with copper by an anion, and a coordination atom that coordinates with copper by an unshared electron pair.
  • the compound which has the above is mentioned.
  • the coordination site coordinated by an anion may be dissociated or non-dissociated.
  • the ligand L is preferably a compound (multidentate ligand) having two or more coordination sites for copper.
  • it is preferable that the ligand L is not continuously bonded with a plurality of ⁇ -conjugated systems such as aromatic groups in order to improve visible transmittance.
  • Ligand L can also use together the compound (monodentate ligand) which has one coordination site
  • the monodentate ligand include a monodentate ligand coordinated by an anion or an unshared electron pair.
  • ligands coordinated with anions include halogen anions, hydroxide anions, alkoxide anions, phenoxide anions, amide anions (including amides substituted with acyl groups and sulfonyl groups), imide anions (acyl groups and sulfonyl groups).
  • Substituted imides anilide anions (including acylides and sulfonyl substituted anilides), thiolate anions, bicarbonate anions, carboxylate anions, thiocarboxylate anions, dithiocarboxylate anions, hydrogen sulfate anions, sulfones Acid anion, phosphate dihydrogen anion, phosphate diester anion, phosphonate monoester anion, hydrogen phosphonate anion, phosphinate anion, nitrogen-containing heterocyclic anion, nitrate anion, hypochlorite anion, cyanide anion Cyanate anion, isocyanate anion, thiocyanate anion, isothiocyanate anions, such as azide anions.
  • Monodentate ligands coordinated by lone pairs include water, alcohol, phenol, ether, amine, aniline, amide, imide, imine, nitrile, isonitrile, thiol, thioether, carbonyl compound, thiocarbonyl compound, sulfoxide, Examples include heterocycles, carbonic acid, carboxylic acid, sulfuric acid, sulfonic acid, phosphoric acid, phosphonic acid, phosphinic acid, nitric acid, and esters thereof.
  • the anion possessed by the ligand L may be any as long as it can coordinate to a copper atom, and is preferably an oxygen anion, a nitrogen anion, or a sulfur anion.
  • the coordination site coordinated by an anion is preferably at least one selected from the following monovalent functional group (AN-1) or divalent functional group (AN-2).
  • AN-1 monovalent functional group
  • AN-2 divalent functional group
  • the wavy line in the following structural formula is the bonding position with the atomic group constituting the ligand.
  • X represents N or CR
  • R each independently represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heteroaryl group.
  • the alkyl group represented by R may be linear, branched or cyclic, but is preferably linear.
  • the alkyl group preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, and still more preferably 1 to 4 carbon atoms. Examples of the alkyl group include a methyl group.
  • the alkyl group may have a substituent. Examples of the substituent include a halogen atom, a carboxyl group, and a heterocyclic group.
  • the heterocyclic group as a substituent may be monocyclic or polycyclic, and may be aromatic or non-aromatic.
  • the number of heteroatoms constituting the heterocycle is preferably 1 to 3, and preferably 1 or 2.
  • the hetero atom constituting the hetero ring is preferably a nitrogen atom.
  • the alkyl group may further have a substituent.
  • the alkenyl group represented by R may be linear, branched or cyclic, but is preferably linear.
  • the alkenyl group preferably has 2 to 10 carbon atoms, and more preferably 2 to 6 carbon atoms.
  • the alkenyl group may be unsubstituted or may have a substituent. Examples of the substituent include those described above.
  • the alkynyl group represented by R may be linear, branched or cyclic, but is preferably linear.
  • the alkynyl group preferably has 2 to 10 carbon atoms, and more preferably 2 to 6 carbon atoms.
  • the alkynyl group may be unsubstituted or may have a substituent. Examples of the substituent include those described above.
  • the aryl group represented by R may be monocyclic or polycyclic, but is preferably monocyclic.
  • the aryl group preferably has 6 to 18 carbon atoms, more preferably 6 to 12 carbon atoms, and still more preferably 6 carbon atoms.
  • the aryl group may be unsubstituted or may have a substituent. Examples of the substituent include those described above.
  • the heteroaryl group represented by R may be monocyclic or polycyclic.
  • the number of heteroatoms constituting the heteroaryl group is preferably 1 to 3.
  • the hetero atom constituting the heteroaryl group is preferably a nitrogen atom, a sulfur atom or an oxygen atom.
  • the heteroaryl group preferably has 6 to 18 carbon atoms, more preferably 6 to 12 carbon atoms.
  • the heteroaryl group may be unsubstituted or may have a substituent. Examples of the substituent include those described above.
  • Examples of coordination sites coordinated by anions also include monoanionic coordination sites.
  • part represents the site
  • an acid group having an acid dissociation constant (pKa) of 12 or less can be mentioned.
  • Specific examples include acid groups containing phosphorous atoms (phosphoric acid diester groups, phosphonic acid monoester groups, phosphinic acid groups, etc.), sulfo groups, carboxyl groups, imido acid groups, and the like. preferable.
  • the coordination atom coordinated by the lone pair is preferably an oxygen atom, a nitrogen atom, a sulfur atom or a phosphorus atom, more preferably an oxygen atom, a nitrogen atom or a sulfur atom, still more preferably an oxygen atom or a nitrogen atom, and a nitrogen atom. Is particularly preferred.
  • the coordinating atom coordinated by the lone pair is a nitrogen atom
  • the atom adjacent to the nitrogen atom is preferably a carbon atom or a nitrogen atom, and more preferably a carbon atom.
  • the coordination atom coordinated by the lone pair of electrons is contained in the ring, or the following monovalent functional group (UE-1), divalent functional group (UE-2), trivalent functional group It is preferably contained in at least one partial structure selected from the base group (UE-3).
  • the wavy line in the following structural formula is the bonding position with the atomic group constituting the ligand.
  • R 1 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heteroaryl group
  • R 2 represents a hydrogen atom, an alkyl group, an alkenyl group Represents a group, alkynyl group, aryl group, heteroaryl group, alkoxy group, aryloxy group, heteroaryloxy group, alkylthio group, arylthio group, heteroarylthio group, amino group or acyl group.
  • the coordinating atom coordinated by the lone pair may be contained in the ring.
  • the ring that includes a coordination atom that coordinates with an unshared electron pair may be monocyclic or polycyclic, It may be aromatic or non-aromatic.
  • the ring containing a coordination atom coordinated by a lone pair is preferably a 5- to 12-membered ring, and more preferably a 5- to 7-membered ring.
  • the ring containing a coordinating atom coordinated by a lone pair may have a substituent, such as a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, carbon number Examples include 6-12 aryl groups, halogen atoms, silicon atoms, alkoxy groups having 1 to 12 carbon atoms, acyl groups having 2 to 12 carbon atoms, alkylthio groups having 1 to 12 carbon atoms, and carboxyl groups.
  • a substituent such as a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, carbon number Examples include 6-12 aryl groups, halogen atoms, silicon atoms, alkoxy groups having 1 to 12 carbon atoms, acyl groups having 2 to 12 carbon atoms, alkylthio groups having 1 to 12 carbon atoms, and carboxyl groups.
  • the ring may further have a substituent, and from the ring containing the coordination atom coordinated by the lone pair A group containing at least one partial structure selected from the above groups (UE-1) to (UE-3), an alkyl group having 1 to 12 carbon atoms, an acyl group having 2 to 12 carbon atoms, hydroxy Groups.
  • R 1 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group Represents an aryl group or a heteroaryl group
  • R 2 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heteroaryl group, an alkoxy group, an aryloxy group, a heteroaryloxy group, an alkylthio group, an arylthio group Represents a heteroarylthio group, an amino group or an acyl group.
  • An aryl group, and a heteroaryl group are synonymous with the alkyl group, alkenyl group, alkynyl group, aryl group, and heteroaryl group described for the coordination site coordinated with the anion, and the preferred ranges are also the same.
  • the alkoxy group preferably has 1 to 12 carbon atoms, and more preferably 3 to 9 carbon atoms.
  • the aryloxy group preferably has 6 to 18 carbon atoms, more preferably 6 to 12 carbon atoms.
  • the heteroaryloxy group may be monocyclic or polycyclic.
  • the heteroaryl group which comprises heteroaryloxy group is synonymous with the heteroaryl group demonstrated by the coordination site
  • the alkylthio group preferably has 1 to 12 carbon atoms, and more preferably 1 to 9 carbon atoms.
  • the arylthio group preferably has 6 to 18 carbon atoms, more preferably 6 to 12 carbon atoms.
  • the heteroarylthio group may be monocyclic or polycyclic.
  • the heteroaryl group which comprises a heteroarylthio group is synonymous with the heteroaryl group demonstrated by the coordination site
  • the acyl group preferably has 2 to 12 carbon atoms, and more preferably 2 to 9 carbon atoms.
  • R 1 is preferably a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an aryl group, more preferably a hydrogen atom or an alkyl group, and particularly preferably an alkyl group.
  • the alkyl group is preferably an alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group.
  • R 1 as a substituent on the N atom an alkyl group, the contribution ratio of the ligand to the molecular orbital of the copper complex is improved, the molar extinction coefficient at the maximum absorption wavelength is improved, and the infrared shielding property In addition, the visible transparency tends to be further improved.
  • an alkyl group is preferable from the balance of heat resistance, infrared shielding property and visible transparency.
  • the ligand When the ligand has a coordination site coordinated by an anion and a coordination atom coordinated by an unshared electron pair in one molecule, it is coordinated by a coordination site coordinated by an anion and an unshared electron pair.
  • the number of atoms linking the coordinated coordination atoms is preferably 1 to 6, more preferably 1 to 3. With such a configuration, the structure of the copper complex becomes more easily distorted, so that the color value can be further improved, and the molar extinction coefficient can be easily increased while enhancing the visible transparency.
  • the kind of atom that connects the coordination site coordinated by the anion and the coordination atom coordinated by the lone pair may be one or more. A carbon atom or a nitrogen atom is preferable.
  • the ligand When the ligand has two or more coordination atoms coordinated by a lone pair in one molecule, it may have three or more coordination atoms coordinated by a lone pair. It is preferable to have ⁇ 5, and more preferably four.
  • the number of atoms connecting the coordinating atoms coordinated by the lone pair is preferably 1 to 6, more preferably 1 to 3, further preferably 2 to 3, and particularly preferably 3. By setting it as such a structure, since the structure of a copper complex becomes easier to distort, color value can be improved more. 1 type (s) or 2 or more types may be sufficient as the atom which connects the coordination atoms coordinated by a lone pair.
  • the atom connecting the coordinating atoms coordinated by the lone pair is preferably a carbon atom.
  • the ligand is preferably a compound having at least two coordination sites (also referred to as a multidentate ligand).
  • the ligand preferably has at least three coordination sites, more preferably 3 to 5, and particularly preferably 4 to 5.
  • the multidentate ligand acts as a chelate ligand for the copper component. That is, at least two coordination sites of the multidentate ligand are chelate-coordinated with copper, so that the structure of the copper complex is distorted, and excellent visible transparency is obtained. It is thought that the color value can also be improved. Accordingly, even if the near-infrared cut filter is used for a long period of time, its characteristics are not impaired, and the camera module can be stably manufactured.
  • a multidentate ligand is a compound comprising one or more coordination sites coordinated by an anion and one or more coordination atoms coordinated by an unshared electron pair, or coordinated by an unshared electron pair. Examples thereof include compounds having two or more atoms, compounds containing two coordination sites coordinated by anions, and the like. These compounds can be used independently or in combination of two or more. Moreover, the compound used as a ligand can also use the compound which has only one coordination site
  • the multidentate ligand is preferably a compound represented by the following formulas (IV-1) to (IV-14).
  • compounds represented by the following formulas (IV-3), (IV-6), (IV-7), and (IV-12) are:
  • the compound represented by (IV-12) is more preferable because it coordinates more strongly with the metal center and easily forms a stable pentacoordination complex having high heat resistance.
  • the ligand is a compound having five coordination sites
  • the following formulas (IV-4), (IV-8) to (IV-11), (IV-13), (IV- (14) is preferred, and (IV-9) to (IV-10), (IV) are preferred because they are more strongly coordinated to the metal center and easily form a stable 5-coordinate complex with high heat resistance.
  • the compounds represented by IV-13) and (IV-14) are more preferred, and the compound represented by (IV-13) is particularly preferred.
  • X 1 to X 59 each independently represent a coordination site
  • L 1 to L 25 each independently represents a single bond or a divalent linking group
  • L 26 to L 32 each independently represents a trivalent linking group
  • L 33 to L 34 each independently represents a tetravalent linking group
  • X 1 to X 42 are each independently selected from the group consisting of a ring containing a coordinating atom coordinated by a lone pair, the group (AN-1), or the group (UE-1) described above It is preferable to represent at least one.
  • X 43 to X 56 are each independently selected from the group consisting of a ring containing a coordinating atom coordinated by a lone pair, the group (AN-2), or the group (UE-2) described above It is preferable to represent at least one.
  • X 57 to X 59 each independently preferably represent at least one selected from the group (UE-3) described above.
  • L 1 to L 25 each independently represents a single bond or a divalent linking group.
  • the divalent linking group an alkylene group having 1 to 12 carbon atoms, an arylene group having 6 to 12 carbon atoms, —SO—, —O—, —SO 2 —, or a combination thereof is preferable.
  • a group consisting of an alkylene group of 1 to 3 groups, a phenylene group, —SO 2 — or a combination thereof is more preferable.
  • L 26 to L 32 each independently represents a trivalent linking group. Examples of the trivalent linking group include groups obtained by removing one hydrogen atom from the above-described divalent linking group.
  • L 33 to L 34 each independently represents a tetravalent linking group. Examples of the tetravalent linking group include groups obtained by removing two hydrogen atoms from the above-described divalent linking group.
  • the group (AN-1) R in ⁇ (AN-2), and, R 1 in group (UE-1) ⁇ (UE -3) is, R to each other, R 1 or between, and R R 1 may be linked to form a ring.
  • formula (IV-2) include the following compound (IV-2A).
  • X 3 , X 4 , and X 43 are groups shown below, L 2 and L 3 are methylene groups, and R 1 is a methyl group, but these R 1 are connected to form a ring, (IV-2B) or (IV-2C) may be used.
  • Specific examples of the compound forming the ligand include the following compounds, compounds shown as preferred specific examples of the polydentate ligand described below, and salts of these compounds.
  • Examples of the atoms constituting the salt include metal atoms and tetrabutylammonium.
  • the metal atom an alkali metal atom or an alkaline earth metal atom is more preferable.
  • Examples of the alkali metal atom include sodium and potassium.
  • Examples of alkaline earth metal atoms include calcium and magnesium.
  • the description of paragraphs 0022 to 0042 of JP 2014-41318 A and the description of paragraphs 0021 to 0039 of JP 2015-43063 A can be referred to, and the contents thereof are incorporated in this specification.
  • the following aspects (1) to (5) are preferred examples of the copper complex, (2) to (5) are more preferred, (3) to (5) are more preferred, (4) or (5) is more preferable.
  • the compound having two coordination sites is a compound having two coordination atoms coordinated by an unshared electron pair, or a coordination site and an unshared electron pair coordinated by an anion.
  • a compound having a coordination atom coordinated with is preferable.
  • the compound of a ligand may be the same and may differ.
  • the copper complex may further have a monodentate ligand.
  • the number of monodentate ligands can be 0, or 1 to 3.
  • both a monodentate ligand coordinated by an anion and a monodentate ligand coordinated by an unshared electron pair are preferable.
  • the compound having two coordination sites is a compound having two coordination atoms coordinated by a lone pair
  • a monodentate ligand coordinated by an anion is more preferable because of its high coordination power.
  • the compound having two coordination sites is non-shared because the entire copper complex has no charge.
  • a monodentate ligand coordinated by an electron pair is more preferred.
  • the compound having three coordination sites is preferably a compound having a coordination atom coordinated by a lone pair, and has three coordination atoms coordinated by a lone pair. More preferred are compounds.
  • the copper complex may further have a monodentate ligand.
  • the number of monodentate ligands can also be zero. One or more may be used, more preferably 1 to 3, more preferably 1 to 2, and still more preferably 2.
  • As the type of monodentate ligand either a monodentate ligand coordinated by an anion or a monodentate ligand coordinated by a lone pair is preferable, and for the reason described above, a monodentate ligand coordinated by an anion is used. More preferred.
  • the compound having three coordination sites is preferably a compound having a coordination site coordinated by an anion and a coordination atom coordinated by an unshared electron pair.
  • a compound having two coordination sites to be coordinated and one coordination atom coordinated by an unshared electron pair is more preferable.
  • the coordination sites coordinated by the two anions are different.
  • the compound having two coordination sites is preferably a compound having a coordination atom coordinated by a lone pair, and more preferably a compound having two coordination atoms coordinated by a lone pair.
  • a compound having three coordination sites is a compound having two coordination sites coordinated by an anion and one coordination atom coordinated by an unshared electron pair.
  • the copper complex may further have a monodentate ligand.
  • the number of monodentate ligands can be zero, or one or more. 0 is more preferable.
  • the compound having four coordination sites is preferably a compound having a coordination atom coordinated by a lone pair, and has two or more coordination atoms coordinated by a lone pair.
  • a compound is more preferable, and a compound having four coordination atoms coordinated by an unshared electron pair is more preferable.
  • the copper complex may further have a monodentate ligand.
  • the number of monodentate ligands can be 0, 1 or more, or 2 or more. One is preferred.
  • As the kind of monodentate ligand both a monodentate ligand coordinated by an anion and a monodentate ligand coordinated by an unshared electron pair are preferable.
  • the compound having five coordination sites is preferably a compound having a coordination atom coordinated by a lone pair, and has two or more coordination atoms coordinated by a lone pair.
  • a compound is more preferable, and a compound having five coordinating atoms coordinated by an unshared electron pair is more preferable.
  • the copper complex may further have a monodentate ligand.
  • the number of monodentate ligands can be zero, or one or more.
  • the number of monodentate ligands is preferably 0.
  • multidentate ligand examples include compounds having two or more coordination sites among the compounds described in the specific examples of the ligand described above, and compounds shown below.
  • a phosphate ester copper complex may be used as the copper complex.
  • the phosphate ester copper complex has copper as a central metal and a phosphate ester compound as a ligand.
  • the phosphate compound forming the ligand of the phosphate copper complex is preferably a compound represented by the following formula (L-100) or a salt thereof.
  • R 1 represents an alkyl group having 1 to 18 carbon atoms, an aryl group having 6 to 18 carbon atoms, an aralkyl group having 1 to 18 carbon atoms, or an alkenyl group having 1 to 18 carbon atoms, or —OR 1 is Represents a polyoxyalkyl group having 4 to 100 carbon atoms, a (meth) acryloyloxyalkyl group having 4 to 100 carbon atoms, or a (meth) acryloyl polyoxyalkyl group having 4 to 100 carbon atoms, and n is 1 or 2 Represents.
  • R 2 may be the same or different.
  • Specific examples of the phosphoric acid ester compound include the ligands described above.
  • the descriptions in paragraphs 0022 to 0042 of JP 2014-41318 A can be referred to, and the contents thereof are incorporated in the present specification.
  • a copper sulfonate complex can also be used as the copper complex.
  • the sulfonic acid copper complex has copper as a central metal and a sulfonic acid compound as a ligand.
  • the sulfonic acid compound forming the ligand of the sulfonic acid copper complex is preferably a compound represented by the following formula (L-200) or a salt thereof. R 2 —SO 2 —OH Formula (L-200)
  • R 2 represents a monovalent organic group.
  • the monovalent organic group include an alkyl group, an aryl group, and a heteroaryl group.
  • the alkyl group, aryl group, and heteroaryl group may be unsubstituted or may have a substituent.
  • Specific examples of the sulfonic acid compound include the ligands described above.
  • the description of paragraph numbers 0021 to 0039 of Japanese Patent Application Laid-Open No. 2015-43063 can be referred to, and the contents thereof are incorporated in this specification.
  • ⁇ Polymer type copper complex >>>
  • a copper-containing polymer having a copper complex site in the polymer side chain can be used as the copper complex.
  • Examples of the copper complex site include those having copper and a site coordinated to copper (coordination site).
  • part coordinated with respect to copper the site
  • part has a site
  • the details of the coordination site include those described in the low molecular type copper compound described above, and the preferred range is also the same.
  • the copper-containing polymer is a polymer obtained by a reaction between a coordination site-containing polymer (also referred to as polymer (B1)) and a copper component, or a polymer having a reactive site in the polymer side chain (hereinafter also referred to as polymer (B2)). ) And a copper complex having a functional group capable of reacting with the reactive site of the polymer (B2).
  • the weight average molecular weight of the copper-containing polymer is preferably 2000 or more, more preferably 2000 to 2 million, and still more preferably 6000 to 200,000.
  • the copper-containing polymer may contain other repeating units in addition to the repeating unit having a copper complex site.
  • the other repeating unit include a repeating unit having a crosslinkable group.
  • the copper complex content is preferably 5 to 95% by mass.
  • the lower limit is preferably 10% by mass or more, more preferably 15% by mass or more, and still more preferably 20% by mass or more.
  • the upper limit is preferably 70% by mass or less, more preferably 60% by mass or less, and still more preferably 50% by mass or less.
  • a copper complex may be used individually by 1 type and can also use 2 or more types together. It is preferable to use two or more copper complexes in combination. When using 2 or more types of copper complexes together, it is preferable that a total amount is the said range.
  • the near-infrared absorbing composition can contain an infrared absorbent (also referred to as other infrared absorbent) other than the copper complex.
  • infrared absorbent also referred to as other infrared absorbent
  • examples of other infrared absorbers include cyanine compounds, pyrrolopyrrole compounds, squarylium compounds, phthalocyanine compounds, naphthalocyanine compounds, diiminium compounds, thiol complex compounds, transition metal oxides, quaterylene compounds, and croconium compounds.
  • Examples of the pyrrolopyrrole compound include compounds described in paragraph Nos. 0016 to 0058 of JP-A-2009-263614, compounds described in paragraph Nos. 0037 to 0052 of JP-A-2011-68731, and the like. The contents are incorporated herein.
  • Examples of the squarylium compound include compounds described in JP-A-2011-208101, paragraphs 0044 to 0049, the contents of which are incorporated herein.
  • Examples of the cyanine compound include compounds described in paragraph Nos. 0044 to 0045 of JP-A-2009-108267, and compounds described in paragraph Nos. 0026 to 0030 of JP-A No. 2002-194040. Incorporated herein.
  • Examples of the diiminium compound include compounds described in JP-T-2008-528706, and the contents thereof are incorporated in the present specification.
  • Examples of the phthalocyanine compound include compounds described in paragraph No. 0093 of JP2012-77153A, oxytitanium phthalocyanine described in JP2006-343631, paragraph Nos. 0013 to 0029 of JP2013-195480A. And the contents of which are incorporated herein.
  • Examples of the naphthalocyanine compound include compounds described in paragraph No. 0093 of JP2012-77153A, the contents of which are incorporated herein.
  • cyanine compound phthalocyanine compound, diiminium compound, squarylium compound, and croconium compound
  • the compounds described in paragraph numbers 0010 to 0081 of JP 2010-1111750 A may be used, the contents of which are incorporated herein. It is.
  • the cyanine compound for example, “functional pigment, Nobu Okawara / Ken Matsuoka / Keijiro Kitao / Kensuke Hirashima, Kodansha Scientific”, the contents of which are incorporated herein. It is.
  • inorganic fine particles can also be used as other infrared absorbers.
  • the inorganic fine particles are preferably metal oxide fine particles or metal fine particles from the viewpoint of better infrared shielding properties.
  • the metal oxide particles include indium tin oxide (ITO) particles, antimony tin oxide (ATO) particles, zinc oxide (ZnO) particles, Al-doped zinc oxide (Al-doped ZnO) particles, and fluorine-doped tin dioxide (F-doped).
  • ITO indium tin oxide
  • ATO antimony tin oxide
  • ZnO zinc oxide
  • Al-doped zinc oxide Al-doped zinc oxide
  • F-doped fluorine-doped tin dioxide
  • SnO 2 niobium-doped titanium dioxide (Nb-doped TiO 2 ) particles, and the like.
  • the metal fine particles include silver (Ag) particles, gold (Au) particles, copper (Cu) particles, and nickel (Ni) particles.
  • a tungsten oxide compound can be used as the inorganic fine particles.
  • the tungsten oxide compound is preferably cesium tungsten oxide.
  • paragraph No. 0080 of JP-A-2016-006476 can be referred to, the contents of which are incorporated herein.
  • the shape of the inorganic fine particles is not particularly limited, and may be a sheet shape, a wire shape, or a tube shape regardless of spherical or non-spherical.
  • the average particle size of the inorganic fine particles is preferably 800 nm or less, more preferably 400 nm or less, and further preferably 200 nm or less. When the average particle size of the inorganic fine particles is within such a range, the visible transparency is good. From the viewpoint of avoiding light scattering, the average particle size is preferably as small as possible, but for reasons such as ease of handling during production, the average particle size of the inorganic fine particles is usually 1 nm or more.
  • the content of the other infrared absorber is preferably 0.1 to 50 parts by mass with respect to 100 parts by mass of the copper complex.
  • the lower limit is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, and still more preferably 1 part by mass or more.
  • the upper limit is preferably 50 parts by mass or less, more preferably 40 parts by mass or less, and still more preferably 35 parts by mass or less.
  • the near-infrared absorbing composition contains a resin.
  • the type of resin is not particularly limited as long as it can be used for an optical material.
  • the resin is preferably a highly transparent resin.
  • polyolefin resin such as polyethylene, polypropylene, carboxylated polyolefin, chlorinated polyolefin, cycloolefin polymer; polystyrene resin; (meth) acrylic resin such as (meth) acrylic ester resin, (meth) acrylamide resin; vinyl acetate Resin; Vinyl halide resin; Polyvinyl alcohol resin; Polyamide resin; Polyurethane resin; Polyester resin such as polyethylene terephthalate (PET) and polyarylate (PAR); Polycarbonate resin; Epoxy resin; Polymaleimide resin; Polyurea resin; And polyvinyl acetal resin.
  • PET polyethylene terephthalate
  • PAR polyarylate
  • (meth) acrylic resin, polyurethane resin, polyester resin, polymaleimide resin, and polyurea resin are preferable, and (meth) acrylic resin, polyurethane resin, and polyester resin are more preferable.
  • the compound having an alkoxysilyl group include materials described in the section of a crosslinkable compound described later.
  • the weight average molecular weight of the resin is preferably 1000 to 300,000.
  • the lower limit is more preferably 2000 or more, and further preferably 3000 or more.
  • the upper limit is more preferably 100,000 or less, and even more preferably 50,000 or less.
  • the number average molecular weight of the resin is preferably 500 to 150,000.
  • the lower limit is more preferably 1000 or more, and further preferably 2,000 or more.
  • the upper limit is more preferably 200,000 or less, and even more preferably 100,000 or less.
  • the resin is preferably a resin having at least one repeating unit represented by the following formulas (A1-1) to (A1-7).
  • R 1 represents a hydrogen atom or an alkyl group
  • L 1 to L 4 each independently represents a single bond or a divalent linking group
  • R 10 to R 13 each independently represents an alkyl group or an aryl group.
  • R 14 and R 15 each independently represents a hydrogen atom or a substituent.
  • the number of carbon atoms of the alkyl group represented by R 1 is preferably 1 to 5, more preferably 1 to 3, and particularly preferably 1.
  • R 1 is preferably a hydrogen atom or a methyl group.
  • Examples of the divalent linking group represented by L 1 to L 4 include an alkylene group, an arylene group, —O—, —S—, —SO—, —CO—, —COO—, —OCO—, —SO 2 —, Examples include —NR a — (R a represents a hydrogen atom or an alkyl group), or a group consisting of a combination thereof.
  • the alkylene group preferably has 1 to 30 carbon atoms, more preferably 1 to 15 carbon atoms, and still more preferably 1 to 10 carbon atoms.
  • the alkylene group may have a substituent, but is preferably unsubstituted.
  • the alkylene group may be linear, branched or cyclic. Further, the cyclic alkylene group may be monocyclic or polycyclic.
  • the number of carbon atoms of the arylene group is preferably 6 to 18, more preferably 6 to 14, and still more preferably 6 to 10.
  • the alkyl group represented by R 10 to R 13 may be linear, branched or cyclic.
  • the alkyl group may have a substituent or may be unsubstituted.
  • the alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, still more preferably 1 to 10 carbon atoms.
  • the aryl group represented by R 10 to R 13 preferably has 6 to 18 carbon atoms, more preferably 6 to 12 carbon atoms, and still more preferably 6 carbon atoms.
  • R 10 is preferably a linear or branched alkyl group or an aryl group, and more preferably a linear or branched alkyl group.
  • R 11 and R 12 are preferably each independently a linear or branched alkyl group, and more preferably a linear alkyl group.
  • R 13 is preferably a linear or branched alkyl group or an aryl group.
  • the substituents represented by R 14 and R 15 are halogen atoms, cyano groups, nitro groups, alkyl groups, alkenyl groups, alkynyl groups, aryl groups, heteroaryl groups, aralkyl groups, alkoxy groups, aryloxy groups, heteroaryloxy groups, Alkylthio group, arylthio group, heteroarylthio group, —NR a1 R a2 , —COR a3 , —COOR a4 , —OCOR a5 , —NHCOR a6 , —CONR a7 R a8 , —NHCONR a9 R a10 , —NHCOOR a11 , — SO 2 R a12 , —SO 2 OR a13 , —NHSO 2 R a14, or —SO 2 NR a15 R a16 may be mentioned.
  • R a1 to R a16 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. Of these, at least one of R 14 and R 15 preferably represents a cyano group or —COOR a4 . R a4 preferably represents a hydrogen atom, an alkyl group or an aryl group.
  • Examples of a commercially available resin having a repeating unit represented by the formula (A1-7) include ARTON F4520 (manufactured by JSR Corporation). The details of the resin having a repeating unit represented by the formula (A1-7) can be referred to the descriptions in paragraph numbers 0053 to 0075 and 0127 to 0130 of JP2011-100084A. Embedded in the book.
  • the resin is preferably a resin having a repeating unit represented by the formula (A1-4), and a repeating unit represented by the formula (A1-1) and a repeating unit represented by the formula (A1-4).
  • a resin having a unit is more preferable. According to this aspect, the thermal shock resistance of the resin film tends to be improved. Furthermore, the compatibility between the copper complex and the resin is improved, and a resin film with few precipitates is easily obtained.
  • the resin has a crosslinkable group.
  • the crosslinkable group is preferably a group having an ethylenically unsaturated bond, a cyclic ether group, a methylol group or an alkoxysilyl group, more preferably a group having an ethylenically unsaturated bond, a cyclic ether group or an alkoxysilyl group, and a cyclic ether group.
  • An alkoxysilyl group is more preferable, and an alkoxysilyl group is particularly preferable.
  • Examples of the group having an ethylenically unsaturated bond include a vinyl group, a (meth) allyl group, and a (meth) acryloyl group.
  • Examples of the cyclic ether group include an epoxy group (oxiranyl group), an oxetanyl group, and an alicyclic epoxy group.
  • Examples of the alkoxysilyl group include a monoalkoxysilyl group, a dialkoxysilyl group, and a trialkoxysilyl group.
  • the crosslinkable group value of the resin is preferably 0.5 to 4 mmol / g.
  • the lower limit is preferably 0.6 mmol / g or more, more preferably 0.8 mmol / g or more, and further preferably 1 mmol / g or more.
  • the upper limit is preferably 3.5 mmol / g or less, more preferably 3 mmol / g or less, still more preferably 2 mmol / g or less.
  • the crosslinkable group value of resin is an equivalent amount of the crosslinkable group contained in 1 g of resin.
  • the crosslinking group value of the resin can be measured by a method such as titration.
  • the Si value of the resin is preferably 0.5 to 4 mmol / g.
  • the lower limit is preferably 0.6 mmol / g or more, more preferably 0.8 mmol / g or more, and further preferably 1 mmol / g or more.
  • the upper limit is preferably 3.5 mmol / g or less, more preferably 3 mmol / g or less, still more preferably 2 mmol / g or less.
  • the Si value of the resin is an equivalent amount of alkoxysilyl groups contained in 1 g of the resin.
  • the Si value of the resin can be measured by a method such as titration.
  • the resin having a crosslinkable group is preferably a resin containing a repeating unit having a crosslinkable group, and the repeating unit represented by the formula (A1-1) and / or the formula (A1-4) and a crosslinkable group.
  • a resin containing a repeating unit having a group is preferred.
  • repeating unit having a crosslinkable group examples include repeating units represented by the following formulas (A2-1) to (A2-4), and are represented by formulas (A2-1) to (A2-3). Repeating units are preferred.
  • R 2 represents a hydrogen atom or an alkyl group.
  • the alkyl group preferably has 1 to 5 carbon atoms, more preferably 1 to 3 carbon atoms, and particularly preferably 1 carbon atom.
  • R 2 is preferably a hydrogen atom or a methyl group.
  • L 51 represents a single bond or a divalent linking group.
  • the divalent linking group include the divalent linking groups described for L 1 to L 4 in the above formulas (A1-1) to (A1-7).
  • L 51 is preferably an alkylene group or a group formed by combining an alkylene group and —O—.
  • the number of atoms constituting the L 51 chain is preferably 2 or more, more preferably 3 or more, and still more preferably 4 or more.
  • the upper limit can be set to 200 or less, for example.
  • P 1 represents a crosslinkable group.
  • the crosslinkable group include a group having an ethylenically unsaturated bond, a cyclic ether group, a methylol group, and an alkoxysilyl group, and a group having an ethylenically unsaturated bond, a cyclic ether group, and an alkoxysilyl group are preferable, and cyclic An ether group and an alkoxysilyl group are more preferable, and an alkoxysilyl group is still more preferable.
  • the details of the group having an ethylenically unsaturated bond, the cyclic ether group, and the alkoxysilyl group are as described above.
  • the number of carbon atoms of the alkoxy group in the alkoxysilyl group is preferably 1 to 5, more preferably 1 to 3, and particularly preferably 1 or 2.
  • the resin when the resin is a resin containing a repeating unit having a crosslinkable group, the resin preferably contains 5 to 100 mol% of the repeating unit having a crosslinkable group in the total repeating units of the resin.
  • the lower limit is preferably 6 mol% or more, more preferably 8 mol% or more, and still more preferably 10 mol% or more.
  • the upper limit is preferably 95 mol% or less, more preferably 80 mol% or less, and still more preferably 60 mol% or less. According to this aspect, the resin film having the mechanical properties described above can be easily obtained.
  • Resin may contain other repeating units in addition to the repeating units described above.
  • the description in paragraph Nos. 0068 to 0075 of JP-A-2010-106268 paragraph Nos. 0112 to 0118 of the corresponding US Patent Application Publication No. 2011/0124824 can be referred to. The contents of which are incorporated herein.
  • resins having the following structure include resins having the following structure.
  • the resin content is preferably 30 to 90% by mass with respect to the total solid content of the near-infrared absorbing composition.
  • the lower limit is preferably 35% by mass or more, more preferably 40% by mass or more, and still more preferably 50% by mass or more.
  • the upper limit is preferably 85% by mass or less, and more preferably 80% by mass or less.
  • the content of the resin having a crosslinkable group in the total amount of the resin is preferably 5 to 100 mol%, more preferably 8 to 100 mol%, and more preferably 10 to 100 mol%. Further preferred. Only one type of resin may be used, or two or more types of resins may be used. In the case of two or more types, the total amount is preferably within the above range.
  • the near-infrared absorbing composition preferably contains a monomer having a crosslinkable group (hereinafter also referred to as a crosslinking agent).
  • a crosslinkable group include a group having an ethylenically unsaturated bond, a cyclic ether group, a methylol group, and an alkoxysilyl group, and a group having an ethylenically unsaturated bond, a cyclic ether group, and an alkoxysilyl group are preferable.
  • a cyclic ether group and an alkoxysilyl group are more preferable, and an alkoxysilyl group is still more preferable.
  • the groups described for the resin having a crosslinkable group can be given.
  • the alkoxysilyl group a dialkoxysilyl group and a trialkoxysilyl group are preferable.
  • the number of carbon atoms of the alkoxy group in the alkoxysilyl group is preferably 1 to 5, more preferably 1 to 3, and particularly preferably 1 or 2.
  • the molecular weight of the crosslinking agent is preferably 100 to 3000.
  • the upper limit is preferably 2000 or less, and more preferably 1500 or less.
  • the lower limit is preferably 150 or more, and more preferably 250 or more.
  • the crosslinking group value of the crosslinking agent is preferably 3 to 20 mmol / g.
  • the lower limit is preferably 3.5 mmol / g or more, more preferably 4 mmol / g or more, and still more preferably 5 mmol / g or more.
  • the upper limit is preferably 19 mmol / g or less, more preferably 17 mmol / g or less, and still more preferably 15 mmol / g or less.
  • the cross-linking group value of the cross-linking agent is an equivalent amount of the cross-linking group contained in 1 g of the cross-linking agent.
  • the crosslinking group value of the crosslinking agent can be measured by a method such as titration.
  • the crosslinking agent is preferably a compound having 2 to 5 crosslinkable groups in one molecule.
  • the upper limit of the crosslinkable group is preferably 4 or less, and more preferably 3 or less.
  • the crosslinking agent is preferably a compound containing 2 to 5 Si atoms in one molecule.
  • the upper limit of Si atoms is preferably 4 or less, and more preferably 3 or less.
  • the number of Si atoms in the cross-linking agent is preferably two.
  • the two Si atoms in the cross-linking agent are preferably bonded with 2 to 10 atoms separated, more preferably 3 to 9 atoms bonded. More preferably, the atoms are bonded at a distance.
  • the case where two Si atoms are bonded to each other with 2 to 10 atoms separated means that the number of atoms constituting the linking chain connecting the Si atoms is 2 to 10. To do.
  • two Si atoms are bonded to each other with six atoms separated.
  • the two Si atoms are preferably bonded via an alkylene group having 2 to 10 carbon atoms, more preferably bonded via an alkylene group having 3 to 9 carbon atoms. More preferably, they are bonded via 4 to 8 alkylene groups.
  • the crosslinking agent is preferably a compound containing 2 to 5 alkoxysilyl groups in one molecule.
  • the upper limit of the alkoxysilyl group is preferably 4 or less, and more preferably 3 or less.
  • the number of alkoxysilyl groups is preferably two.
  • the alkoxysilyl group is preferably a dialkoxysilyl group or a trialkoxysilyl group, and more preferably a trialkoxysilyl group.
  • the two alkoxysilyl groups of the cross-linking agent are preferably bonded with 2 to 10 atoms separated, more preferably 3 to 9 atoms bonded. More preferably, 8 atoms are bonded apart.
  • the two alkoxysilyl groups are preferably bonded via an alkylene group having 2 to 10 carbon atoms, more preferably bonded via an alkylene group having 3 to 9 carbon atoms. More preferably, they are bonded via an alkylene group of 4 to 8.
  • the Si value of the crosslinking agent is preferably 3 to 20 mmol / g.
  • the lower limit of the Si value is preferably 3.5 mmol / g or more, more preferably 4 mmol / g or more, and still more preferably 5 mmol / g or more.
  • the upper limit of the Si value is preferably 19 mmol / g or less, more preferably 17 mmol / g or less, and still more preferably 15 mmol / g or less.
  • Si value of a crosslinking agent is an equivalent amount of the crosslinking group contained in 1 g of crosslinking agents. The Si value of the crosslinking agent can be measured by a method such as titration.
  • the compound having an alkoxysilyl group examples include tetraethoxysilane, methyltrimethoxysilane, dimethyldimethoxysilane, phenyltrimethoxysilane, methyltriethoxysilane, dimethyldiethoxysilane, phenyltriethoxysilane, and n-propyltrimethoxy.
  • a compound having a group having an ethylenically unsaturated bond can be used as the crosslinking agent.
  • the compound having a group having an ethylenically unsaturated bond is preferably a (meth) acrylate compound.
  • Examples of the compound having a group having an ethylenically unsaturated bond include the following compounds. Details of the compound having a group having an ethylenically unsaturated bond can be referred to the description in paragraph numbers 0086 to 0099 of JP-A No. 2016-006476, the contents of which are incorporated herein.
  • a compound having a cyclic ether group can also be used as a crosslinking agent.
  • the cyclic ether group include an epoxy group and an oxetanyl group, and an epoxy group is preferable.
  • EHPE 3150 made by Daicel Corporation
  • Examples of the compound having a cyclic ether group include paragraph numbers 0034 to 0036 of JP2013-011869A, paragraphs 0147 to 0156 of JP2014043556A, and paragraph number 0085 of JP2014089408A.
  • the compounds described in ⁇ 0092 can also be used. These contents are incorporated herein.
  • the near-infrared absorbing composition when the near-infrared absorbing composition contains a crosslinking agent, the near-infrared absorbing composition preferably contains 3 to 30 parts by mass of the crosslinking agent with respect to 100 parts by mass of the resin, and preferably 5 to 20 parts by mass. The content is more preferably 7 to 15 parts by mass.
  • the near-infrared absorbing composition preferably contains 3 to 30 parts by mass of a crosslinking agent, more preferably 5 to 20 parts by mass, and more preferably 7 to 15 parts by mass with respect to 100 parts by mass of the resin having a crosslinkable group. More preferably, it is contained in parts by mass.
  • One type of crosslinking agent may be sufficient and two or more types may be sufficient as it. In the case of two or more types, the total amount is preferably within the above range.
  • the near-infrared absorbing composition can contain a polymerization initiator.
  • the polymerization initiator is not particularly limited as long as it has the ability to initiate crosslinking of a resin having a crosslinkable group or a crosslinking agent by either or both of light and heat.
  • a polymerization initiator having photosensitivity to light in the ultraviolet region to the visible region is preferable.
  • a polymerization initiator that decomposes at 150 to 250 ° C. is preferable.
  • a compound having an aromatic group is preferable.
  • Examples include organic peroxides, diazonium compounds, iodonium compounds, sulfonium compounds, azinium compounds, onium salt compounds such as metallocene compounds, organic boron salt compounds, disulfone compounds, and thiol compounds.
  • the description in paragraphs 0217 to 0228 of JP2013-253224A can be referred to, and the contents thereof are incorporated herein.
  • the polymerization initiator is preferably an oxime compound, an ⁇ -hydroxyketone compound, an ⁇ -aminoketone compound, and an acylphosphine compound.
  • the oxime compound the oxime compounds mentioned in the radical trapping agent described later can also be used.
  • the content of the polymerization initiator is preferably 0.01 to 30% by mass with respect to the total solid content of the near-infrared absorbing composition.
  • the lower limit is preferably 0.1% by mass or more.
  • the upper limit is preferably 20% by mass or less, and more preferably 15% by mass or less. Only one type of polymerization initiator may be used, or two or more types may be used. In the case of two or more types, the total amount is preferably within the above range.
  • the near-infrared absorbing composition preferably contains a solvent.
  • the solvent is not particularly limited and may be appropriately selected depending on the purpose as long as each component can be uniformly dissolved or dispersed.
  • water or an organic solvent can be used.
  • the organic solvent include alcohols, ketones, esters, aromatic hydrocarbons, halogenated hydrocarbons, dimethylformamide, dimethylacetamide, dimethylsulfoxide, sulfolane and the like. These may be used alone or in combination of two or more.
  • Specific examples of alcohols, aromatic hydrocarbons, and halogenated hydrocarbons include the solvents described in paragraph 0136 of JP2012-194534A, the contents of which are incorporated herein.
  • esters, ketones, and ethers include the solvents described in paragraph 0497 of JP2012-208494A (paragraph number 0609 of the corresponding US Patent Application Publication No. 2012/0235099).
  • the solvent include: n-amyl acetate, ethyl propionate, dimethyl phthalate, ethyl benzoate, methyl sulfate, acetone, methyl isobutyl ketone, diethyl ether, ethylene glycol monobutyl ether acetate, 1-methoxy-2-propanol , Cyclopentanone, cyclohexanone, propylene glycol monomethyl ether acetate, N-methyl-2-pyrrolidone, butyl acetate, ethyl lactate, propylene glycol monomethyl ether, 3-methoxybutyl acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol
  • a solvent having a boiling point of 150 ° C. or lower (preferably having a boiling point of 30 to 145 ° C., more preferably 50 to 140 ° C.) may be used alone. May be used alone (hereinafter, also referred to as a high boiling point solvent) having a boiling point of 155 to 300 ° C. (preferably a boiling point of 155 to 300 ° C., more preferably 160 to 250 ° C.). May be used in combination.
  • a high-boiling solvent By using a high-boiling solvent, the evaporation rate of the solvent in the near-infrared absorbing composition becomes slow, and it is easy to stabilize the drying and suppress the precipitation of residues.
  • a high-boiling solvent is used as a solvent from the viewpoint of stabilization of drying and precipitation of residues. It is preferable to use a low boiling point solvent together.
  • the difference between the boiling point of the high boiling point solvent and the boiling point of the low boiling point solvent is preferably 20 to 250 ° C., more preferably 50 to 150 ° C. .
  • the high boiling point solvent include 3-methoxybutyl acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, triacetin, 3-methoxybutanol, dipropylene glycol methyl ether acetate, 1,4-butanediol diacetate, cyclohexanol.
  • Examples include acetate, dipropylene glycol dimethyl ether, propylene glycol diacetate, dipropylene glycol methyl-n-propyl ether, 1,3-butylene glycol diacetate, and 1,6-hexanediol diacetate.
  • Examples of the low boiling point solvent include cyclopentanone, butyl acetate, acetone, methyl ethyl ketone, methyl isobutyl ketone, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and the like.
  • a solvent having a low metal content it is preferable to use a solvent having a low metal content, and the metal content of the solvent is preferably 10 mass ppb (parts per billion) or less, for example. If necessary, a solvent having a mass ppt (parts per trillation) level may be used, and such a high-purity solvent is provided, for example, by Toyo Gosei Co., Ltd. (Chemical Industry Daily, November 13, 2015).
  • Examples of the method for removing impurities such as metals from the solvent include distillation (molecular distillation, thin film distillation, etc.) and filtration using a filter.
  • the filter pore size of the filter used for filtration is preferably 10 nm or less, more preferably 5 nm or less, and still more preferably 3 nm or less.
  • the filter material is preferably polytetrafluoroethylene, polyethylene or nylon.
  • the solvent may contain isomers (compounds having the same number of atoms and different structures). Moreover, only 1 type may be included and the isomer may be included multiple types.
  • the content of the solvent is preferably such that the total solid content of the near-infrared absorbing composition is 5 to 70% by mass.
  • the lower limit is more preferably 10% by mass or more.
  • the upper limit is preferably 65% by mass or less, more preferably 60% by mass or less, further preferably 50% by mass or less, and still more preferably 40% by mass or less. Only one type of solvent may be used, or two or more types may be used, and in the case of two or more types, the total amount is preferably within the above range.
  • the near infrared absorbing composition may contain a catalyst.
  • a catalyst for example, when a resin having a crosslinkable group such as an alkoxysilyl group is used or when a crosslinker is used, the near-infrared absorbing composition contains a catalyst to promote crosslinkable group crosslinking. It is easy to obtain a resin film excellent in mechanical properties, solvent resistance, heat resistance and the like.
  • the catalyst examples include an organometallic catalyst, an acid catalyst, an amine catalyst, and the like, and an organometallic catalyst is preferable.
  • the organometallic catalyst includes at least one metal selected from the group consisting of Na, K, Ca, Mg, Ti, Zr, Al, Zn, Sn, and Bi, oxide, sulfide, halide, carbonic acid. At least one selected from the group consisting of a salt, carboxylate, sulfonate, phosphate, nitrate, sulfate, alkoxide, hydroxide, and optionally substituted acetylacetonate complex Preferably there is.
  • the metal is at least one selected from the group consisting of halides, carboxylates, nitrates, sulfates, hydroxides, and optionally substituted acetylacetonate complexes.
  • halides carboxylates, nitrates, sulfates, hydroxides, and optionally substituted acetylacetonate complexes.
  • acetylacetonate complexes are more preferred.
  • an acetylacetonate complex of Al is preferable.
  • Specific examples of the organometallic catalyst include, for example, tris (2,4-pentanedionato) aluminum.
  • the content of the catalyst is preferably 0.01 to 5% by mass with respect to the total solid content of the near-infrared absorbing composition.
  • the upper limit is preferably 3% by mass or less, and more preferably 1% by mass or less.
  • the lower limit is preferably 0.05% by mass or more.
  • the near-infrared absorbing composition can also contain a radical trapping agent.
  • radical trapping agents include oxime compounds.
  • Commercially available oxime compounds include IRGACURE-OXE01, IRGACURE-OXE02, IRGACURE-OXE03, IRGACURE-OXE04 (above, manufactured by BASF), TR-PBG-304 (manufactured by Changzhou Powerful Electronic New Materials Co., Ltd.), Adeka Arcles NCI-831 (manufactured by ADEKA Corporation), Adeka Arkles NCI-930 (manufactured by ADEKA Corporation), Adekaoptomer N-1919 (manufactured by ADEKA Corporation), and the like can be used.
  • an oxime compound having a fluorine atom can be used as the oxime compound.
  • Specific examples of the oxime compound having a fluorine atom include compounds described in JP 2010-262028 A, compound 24 described in JP-A-2014-500852, compound 36-40, and JP 2013-164471 A. And the compound (C-3) described. This content is incorporated herein.
  • an oxime compound having a nitro group can be used as the oxime compound.
  • the oxime compound having a nitro group is also preferably a dimer.
  • Specific examples of the oxime compound having a nitro group include compounds described in paragraphs 0031 to 0047 of JP2013-114249A, paragraphs 0008 to 0012 and 0070 to 0079 of JP2014-137466A, Examples include compounds described in paragraph Nos. 0007 to 0025 of Japanese Patent No. 4223071, Adeka Arcles NCI-831 (manufactured by ADEKA Corporation).
  • an oxime compound having a fluorene ring can also be used.
  • Specific examples of the oxime compound having a fluorene ring include compounds described in JP-A-2014-137466. This content is incorporated herein.
  • an oxime compound having a benzofuran skeleton can also be used.
  • Specific examples include compounds OE-01 to OE-75 described in International Publication No. WO2015 / 036910.
  • the content of the radical trapping agent is preferably 0.01 to 30% by mass with respect to the total solid content of the near-infrared absorbing composition.
  • the lower limit is preferably 0.1% by mass or more.
  • the upper limit is preferably 20% by mass or less, and more preferably 10% by mass or less.
  • the near-infrared absorbing composition can also contain a surfactant. Only one type of surfactant may be used, or two or more types may be combined.
  • the content of the surfactant is preferably 0.0001 to 5% by mass with respect to the total solid content of the near-infrared absorbing composition.
  • the lower limit is preferably 0.005% by mass or more, and more preferably 0.01% by mass or more.
  • the upper limit is preferably 2% by mass or less, and more preferably 1% by mass or less.
  • the wettability of the near-infrared absorbing composition can be increased, It is easy to produce a near-infrared cut filter with a large film thickness.
  • the surfactant various surfactants such as a fluorosurfactant, nonionic surfactant, cationic surfactant, anionic surfactant, and silicone surfactant can be used. And a silicone-based surfactant are preferable, and a fluorine-based surfactant is more preferable.
  • the fluorine content in the fluorosurfactant is preferably 3 to 40% by mass.
  • the lower limit is preferably 5% by mass or more, and more preferably 7% by mass or more.
  • the upper limit is preferably 30% by mass or less, and more preferably 25% by mass or less. If the fluorine content in the fluorosurfactant is in the above-described range, it is effective in terms of uniformity of coating film thickness and liquid-saving properties.
  • fluorosurfactant examples include surfactants described in paragraph numbers 0060 to 0064 of JP2014-41318A and surfactants described in paragraph numbers 0117 to 0132 of JP2011-132503A. The contents of which are incorporated herein.
  • fluorosurfactants include Megafac F171, F172, F173, F176, F177, F141, F142, F143, F144, R30, F437, F475, F479, F482, F554, F780 (and above, DIC).
  • an acrylic compound having a molecular structure having a functional group containing a fluorine atom, and the fluorine atom is volatilized by cleavage of the functional group containing the fluorine atom when heated can also be suitably used.
  • a fluorosurfactant include Megafac DS series manufactured by DIC Corporation (Chemical Industry Daily, February 22, 2016 and Nikkei Sangyo Shimbun, February 23, 2016), such as Megafac DS- 21 can be used, and these can be used.
  • a block polymer can also be used as the fluorosurfactant.
  • the fluorine-based surfactant has a repeating unit derived from a (meth) acrylate compound having a fluorine atom and 2 or more (preferably 5 or more) alkyleneoxy groups (preferably ethyleneoxy group or propyleneoxy group) (meta).
  • a fluorine-containing polymer compound containing a repeating unit derived from an acrylate compound can also be preferably used.
  • the following compounds are also exemplified as the fluorosurfactant used in the present invention.
  • the weight average molecular weight of the above compound is preferably 3,000 to 50,000, for example, 14,000. % Which shows the ratio of a repeating unit in said compound is the mass%.
  • a fluoropolymer having an ethylenically unsaturated group in the side chain can also be used.
  • Specific examples thereof include compounds described in paragraph Nos. 0050 to 0090 and paragraph Nos. 0289 to 0295 of JP2010-164965A, for example, Megafac RS-101, RS-102, RS-718K manufactured by DIC Corporation. RS-72-K and the like.
  • the fluorine-based surfactant compounds described in paragraph numbers 0015 to 0158 of JP-A No. 2015-117327 can also be used.
  • nonionic surfactants include nonionic surfactants described in paragraph No. 0553 of JP2012-208494A, the contents of which are incorporated herein.
  • examples of the cationic surfactant include a cationic surfactant described in paragraph No. 0554 of JP2012-208494A, the contents of which are incorporated herein.
  • examples of the anionic surfactant include W004, W005, W017 (manufactured by Yusho Co., Ltd.) and the like.
  • examples of the silicone-based surfactant include KF6001 (manufactured by Shin-Etsu Silicone) and the silicone-based surfactant described in paragraph No. 0556 of JP2012-208494A, the contents of which are incorporated herein. .
  • the near-infrared absorbing composition can contain an ultraviolet absorber.
  • an ultraviolet absorber a conjugated diene compound, an aminodiene compound, a salicylate compound, a benzophenone compound, a benzotriazole compound, an acrylonitrile compound, a hydroxyphenyltriazine compound, or the like can be used.
  • benzotriazole has good compatibility with copper complexes and the like, and furthermore, the copper complex and absorption wavelength are suitable, and the ultraviolet shielding property can be enhanced while maintaining excellent visible transparency.
  • Compounds and hydroxyphenyltriazine compounds are preferred.
  • the content of the ultraviolet absorber is preferably from 0.01 to 10 mass%, more preferably from 0.01 to 5 mass%, based on the total solid content of the near-infrared absorbing composition.
  • the near-infrared absorbing composition further includes a dispersant, a sensitizer, a curing accelerator, a filler, a thermal curing accelerator, a thermal polymerization inhibitor, a plasticizer, an adhesion promoter, and other auxiliary agents (for example, conductive particles). , Fillers, antifoaming agents, flame retardants, leveling agents, peeling accelerators, antioxidants, fragrances, surface tension adjusting agents, chain transfer agents and the like. With respect to these components, descriptions in paragraph numbers 0101 to 0104 and 0107 to 0109 of JP-A-2008-250074 can be referred to, and the contents thereof are incorporated in the present specification.
  • the antioxidant examples include a phenol compound, a phosphite compound, and a thioether compound.
  • a phenol compound having a molecular weight of 500 or more, a phosphite compound having a molecular weight of 500 or more, or a thioether compound having a molecular weight of 500 or more is more preferable. You may use these in mixture of 2 or more types.
  • the phenol compound any phenol compound known as a phenol-based antioxidant can be used.
  • Preferable phenolic compounds include hindered phenolic compounds. In particular, a compound having a substituent at a site (ortho position) adjacent to the phenolic hydroxyl group is preferable.
  • a substituted or unsubstituted alkyl group having 1 to 22 carbon atoms is preferable.
  • Group, t-pentyl group, hexyl group, octyl group, isooctyl group and 2-ethylhexyl group are more preferable.
  • a compound (antioxidant) having a phenol group and a phosphite group in the same molecule is also preferred.
  • phosphorus antioxidant can also be used suitably for antioxidant.
  • phosphorus-based antioxidant tris [2-[[2,4,8,10-tetrakis (1,1-dimethylethyl) dibenzo [d, f] [1,3,2] dioxaphosphine-6 -Yl] oxy] ethyl] amine, tris [2-[(4,6,9,11-tetra-tert-butyldibenzo [d, f] [1,3,2] dioxaphosphin-2-yl And at least one compound selected from the group consisting of) oxy] ethyl] amine and ethyl bis (2,4-di-tert-butyl-6-methylphenyl) phosphite.
  • the content of the antioxidant is preferably 0.01 to 20% by mass and more preferably 0.3 to 15% by mass with respect to the total solid content of the near-infrared absorbing composition. Only one type of antioxidant may be used, or two or more types may be used. In the case of two or more types, the total amount is preferably within the above range.
  • the viscosity of the near infrared ray absorbing composition is preferably 1 to 3000 mPa ⁇ s when a resin film is formed by coating.
  • the lower limit is preferably 10 mPa ⁇ s or more, and more preferably 100 mPa ⁇ s or more.
  • the upper limit is preferably 2000 mPa ⁇ s or less, and more preferably 1500 mPa ⁇ s or less.
  • Said near-infrared absorption composition can be prepared by mixing each component.
  • the components constituting the near-infrared absorbing composition may be blended together, or may be blended sequentially after each component is dissolved and / or dispersed in a solvent.
  • the near-infrared absorbing composition contains particles such as pigments
  • the mechanical force used for dispersing the particles includes compression, squeezing, impact, shearing, cavitation and the like.
  • Specific examples of these processes include a bead mill, a sand mill, a roll mill, a ball mill, a paint shaker, a microfluidizer, a high speed impeller, a sand grinder, a flow jet mixer, a high pressure wet atomization, and an ultrasonic dispersion.
  • the pulverization of the particles in the sand mill it is preferable to use the beads having a small diameter, or the processing under the condition of increasing the pulverization efficiency by increasing the filling rate of the beads. Further, it is preferable to remove coarse particles by filtration, centrifugation, or the like after the pulverization treatment. Also, the process and disperser for dispersing particles are described in “Dispersion Technology Taizen, Issued by Information Technology Corporation, July 15, 2005” and “Dispersion technology and industrial application centering on suspension (solid / liquid dispersion system)”. In fact, a comprehensive document collection, published by the Management Development Center Publishing Department, October 10, 1978 ”, paragraph No.
  • JP-A-2015-157893 can be suitably used.
  • the particles may be refined in the salt milling process.
  • materials, equipment, processing conditions, etc. used in the salt milling process for example, descriptions in JP-A Nos. 2015-194521 and 2012-046629 can be referred to.
  • the near-infrared absorbing composition is preferably filtered with a filter for the purpose of removing foreign substances or reducing defects.
  • a filter can be used without particular limitation as long as it has been conventionally used for filtration.
  • fluororesin such as polytetrafluoroethylene (PTFE), polyamide resin such as nylon (eg nylon-6, nylon-6,6), polyolefin resin such as polyethylene and polypropylene (PP) (high density, ultra high molecular weight)
  • PP polypropylene
  • a filter using a material such as polyolefin resin.
  • polypropylene including high density polypropylene
  • nylon are preferable.
  • the pore size of the filter is suitably about 0.01 to 7.0 ⁇ m, preferably about 0.01 to 3.0 ⁇ m, more preferably about 0.05 to 0.5 ⁇ m. By setting it as this range, it becomes possible to remove a fine foreign material reliably. Further, it is also preferable to use a fiber-like filter medium, and examples of the filter medium include polypropylene fiber, nylon fiber, glass fiber, and the like. Specifically, SBP type series (SBP008 etc.), TPR type series (TPR002) manufactured by Loki Techno Co., Ltd. , TPR005, etc.) and SHPX type series (SHPX003 etc.) filter cartridges can be used.
  • the pore diameter can refer to the nominal value of the filter manufacturer. As a commercially available filter, for example, it can be selected from various filters provided by Nippon Pole Co., Ltd., Advantech Toyo Co., Ltd., Japan Entegris Co., Ltd. (formerly Japan Microlith Co., Ltd.) or KITZ Micro Filter Co. .
  • a filter formed of the same material as the first filter described above can be used.
  • the pore size of the second filter is preferably 0.2 to 10.0 ⁇ m, more preferably 0.2 to 7.0 ⁇ m, and still more preferably 0.3 to 6.0 ⁇ m.
  • the near-infrared cut filter of the present invention can be produced by forming a resin film using the above-described near-infrared absorbing composition. Specifically, it can be produced by forming a resin film through a step of forming a near-infrared absorbing composition layer by applying the near-infrared absorbing composition to a support and a step of curing the near-infrared absorbing composition layer. You may have the process of drying a near-infrared absorption composition layer further between the process of forming a near-infrared absorption composition layer, and the process of hardening a near-infrared absorption composition layer.
  • the resin film may be peeled from the support and the resin film itself may be used as the near-infrared cut filter.
  • a known method can be used as a method for applying the near-infrared absorbing composition.
  • a dropping method drop casting
  • a slit coating method for example, a spray method; a roll coating method; a spin coating method (spin coating); a casting coating method; a slit and spin method; a pre-wet method (for example, JP 2009-145395 A).
  • inkjet for example, on-demand method, piezo method, thermal method
  • ejection printing such as nozzle jet, flexographic printing, screen printing, gravure printing, reverse offset printing, metal mask printing method, etc.
  • the dropping method (drop casting) it is preferable to form a dropping region of the near-infrared absorbing composition having a photoresist as a partition on the support.
  • the film thickness of the near-infrared absorbing composition layer can be adjusted to a desired film thickness by adjusting the dropping amount and solid content concentration of the near-infrared absorbing composition and the area of the dropping region.
  • the aspect of the support is not particularly limited.
  • examples of the material for the support include general glass, tempered glass such as sapphire glass and gorilla glass, transparent ceramic, and plastic.
  • substrate provided in the light-receiving side of the solid-state image sensor may be sufficient. Further, it may be a layer such as a flattening layer provided on the light receiving side of the solid-state imaging device.
  • substrate which does not have transparency can also be used as a support body.
  • a metal substrate, a resin substrate, a silicon substrate, etc. are mentioned.
  • the release layer is formed in the surface of a support body.
  • the drying conditions vary depending on the type and content of each component contained in the near-infrared absorbing composition.
  • the drying temperature is preferably 40 to 160 ° C.
  • the lower limit is preferably 60 ° C. or higher, and more preferably 80 ° C. or higher.
  • the upper limit is preferably 140 ° C. or lower, and more preferably 120 ° C. or lower.
  • the heating time is preferably 1 to 600 minutes.
  • the lower limit is preferably 10 minutes or more, and more preferably 30 minutes or more.
  • the upper limit is preferably 300 minutes or less, and more preferably 180 minutes or less.
  • Another example is a method in which the temperature is raised from room temperature (for example, 25 ° C.) to a predetermined drying temperature at a constant heating rate, and the temperature is maintained and dried.
  • the temperature raising temperature is preferably 0.5 to 10 ° C./min, more preferably 1.0 to 5 ° C./min.
  • the curing method of the near-infrared absorbing composition layer is not particularly limited and can be appropriately selected depending on the purpose.
  • exposure treatment, heat treatment, and the like can be mentioned, and heat treatment is preferable because a resin film excellent in mechanical properties is easily obtained.
  • “exposure” is used to include not only light of various wavelengths but also irradiation of radiation such as electron beams and X-rays.
  • the curing treatment of the near-infrared absorbing composition layer is preferably performed under the condition that the crosslinking rate of the near-infrared absorbing composition layer is 50 to 90%.
  • the crosslinking rate is the number of crosslinked groups / the total number of crosslinked groups, and can be measured by a method such as NMR (nuclear magnetic resonance).
  • the exposure treatment is preferably performed by irradiating the near-infrared absorbing composition layer with radiation.
  • the radiation ultraviolet rays such as an electron beam, KrF, ArF, g-line, h-line, and i-line are preferable.
  • the exposure method include stepper exposure and exposure using a high-pressure mercury lamp.
  • the exposure amount is preferably 5 to 3000 mJ / cm 2 .
  • the upper limit is preferably 2000 mJ / cm 2 or less, and more preferably 1000 mJ / cm 2 or less.
  • the lower limit is preferably 10 mJ / cm 2 or more, and more preferably 50 mJ / cm 2 or more.
  • ultraviolet exposure machines such as an ultrahigh pressure mercury lamp, are mentioned.
  • the heating temperature in the heat treatment is preferably 100 to 180 ° C.
  • the lower limit is preferably 120 ° C. or higher, and more preferably 140 ° C. or higher.
  • the upper limit is preferably 170 ° C. or lower, and more preferably 160 ° C. or lower.
  • the heating time is preferably 0.5 to 48 hours.
  • the lower limit is preferably 1 hour or longer, and more preferably 1.5 hours or longer.
  • the upper limit is preferably 24 hours or less, and more preferably 6 hours or less.
  • the heating device is not particularly limited and can be appropriately selected from known devices according to the purpose. Examples thereof include a hot air dryer, a dry oven, a hot plate, an infrared heater, and a wavelength control dryer. It is done.
  • aging may be performed on the near-infrared absorbing composition layer after the curing treatment.
  • the near-infrared absorbing composition layer is preferably subjected to a high temperature and high humidity treatment.
  • the aging temperature is preferably 60 to 150 ° C.
  • the lower limit is preferably 70 ° C. or higher, and more preferably 80 ° C. or higher.
  • the upper limit is preferably 140 ° C. or lower, and more preferably 130 ° C. or lower.
  • the humidity is preferably 30 to 100%.
  • the lower limit is preferably 40% or more, and more preferably 50% or more.
  • the upper limit is preferably 95% or less, and more preferably 90% or less.
  • the aging time is preferably 0.5 to 100 hours.
  • the lower limit is preferably 1 hour or longer, and more preferably 2 hours or longer.
  • the upper limit is preferably 50 hours or less, and more preferably 25 hours or less.
  • the resin film having the mechanical properties described above can be easily obtained.
  • limiting in particular as an aging apparatus According to the objective, it can select suitably from well-known apparatuses, For example, a high temperature / humidity furnace etc. are mentioned.
  • the above-described aging may be performed on the near-infrared absorbing composition layer formed by applying the near-infrared absorbing composition to the support without passing through the above-described curing step. That is, the resin film may be formed by aging the near-infrared absorbing composition layer without undergoing a curing process. In this embodiment, aging also serves as a curing step. Moreover, in forming the near-infrared absorbing composition layer, the drying step described above may be performed or the drying step may not be performed. That is, the resin film may be formed by performing the above-described aging on the near-infrared absorbing composition layer immediately after coating. Also according to this embodiment, a resin film having the same properties as those obtained when aging is performed after the curing process can be obtained. Examples of the aging conditions (temperature, humidity, time) include the above-described conditions.
  • the solid-state imaging device of the present invention includes the near-infrared cut filter of the present invention.
  • the camera module of the present invention includes the near-infrared cut filter of the present invention.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of a camera module having a near infrared cut filter according to an embodiment of the present invention.
  • a camera module 10 illustrated in FIG. 1 includes a solid-state image sensor 11, a planarization layer 12 provided on the main surface side (light-receiving side) of the solid-state image sensor, a near-infrared cut filter 13, and a near-infrared cut filter. And a lens holder 15 having an imaging lens 14 in the internal space.
  • incident light from the outside passes through the imaging lens 14, the near-infrared cut filter 13, and the planarization layer 12 in order, and then reaches the imaging device portion of the solid-state imaging device 11.
  • the near-infrared cut filter 13 only the resin film having the physical properties described above may be used, or a laminate of the resin film and the support may be used.
  • the material for the support include general glass, tempered glass such as sapphire glass and gorilla glass, transparent ceramic, and plastic.
  • the material for the imaging lens 14 include general glass, tempered glass such as sapphire glass and gorilla glass, transparent ceramic, and plastic.
  • the solid-state imaging device 11 includes, for example, a photodiode, an interlayer insulating film (not shown), a base layer (not shown), a color filter 17, an overcoat (not shown), and a microlens 18 on the main surface of the substrate 16. Are provided in this order.
  • the color filter 17 (red color filter, green color filter, blue color filter) and the microlens 18 are respectively disposed so as to correspond to the solid-state imaging device 11.
  • the surface of the microlens 18, between the base layer and the color filter 17, or between the color filter 17 and the overcoat may be sufficient.
  • the near-infrared cut filter 13 may be provided at a position within 2 mm (more preferably within 1 mm) from the surface of the microlens. If the near infrared cut filter 13 is provided at this position, the process of forming the near infrared cut filter can be simplified. Furthermore, unnecessary near-infrared light incident on the microlens can be sufficiently cut, and the infrared shielding property can be further improved.
  • the number of imaging lenses 14 is one, but the number of imaging lenses 14 may be two or more.
  • the near-infrared cut filter of this invention is excellent in heat resistance, it can use for a solder reflow process.
  • the camera module By manufacturing the camera module through the solder reflow process, it is possible to automatically mount electronic component mounting boards, etc. that need to be soldered, making the productivity significantly higher than when not using the solder reflow process. Can be improved. Furthermore, since it can be performed automatically, the cost can be reduced.
  • the near-infrared cut filter is exposed to a temperature of about 250 to 270 ° C. Therefore, the near-infrared cut filter is also referred to as heat resistance that can withstand the solder reflow process (hereinafter also referred to as “solder reflow resistance”). ).
  • “having solder reflow resistance” means that the characteristics as a near-infrared cut filter are maintained even after heating at 180 ° C. for 1 minute. More preferably, the characteristics are maintained even after heating at 230 ° C. for 10 minutes. More preferably, the characteristics are maintained even after heating at 250 ° C. for 3 minutes.
  • the infrared shielding property of a near-infrared cut filter may fall, or the function as a film
  • the camera module of the present invention can further have an ultraviolet absorbing layer. According to this aspect, the ultraviolet shielding property can be enhanced.
  • the description of paragraphs 0040 to 0070 and 0119 to 0145 in International Publication No. WO2015 / 099060 can be referred to for the ultraviolet absorbing layer, and the contents thereof are incorporated herein.
  • FIGS 2 to 4 are schematic cross-sectional views showing an example of the peripheral portion of the near-infrared cut filter in the camera module.
  • the camera module includes a solid-state imaging device 11, a planarization layer 12, an ultraviolet / infrared light reflection film 19, a transparent base material 20, a near-infrared cut filter 21, and an antireflection layer 22. May be included in this order.
  • the ultraviolet / infrared light reflection film 19 for example, paragraph numbers 0033 to 0039 of JP2013-68688A and paragraph numbers 0110 to 0114 of international publication WO2015 / 099060 can be referred to.
  • the transparent substrate 20 transmits light having a wavelength in the visible region.
  • paragraphs 0026 to 0032 of JP2013-68688A can be referred to, and the contents thereof are incorporated in the present specification. .
  • the antireflection layer 22 has a function of improving the transmittance by preventing reflection of light incident on the near-infrared cut filter 21 and efficiently using incident light.
  • Japanese Patent Application Laid-Open No. 2013-68688 Reference can be made to the description of paragraph number 0040 of the publication, the contents of which are incorporated herein.
  • the camera module includes a solid-state imaging device 11, a near-infrared cut filter 21, an antireflection layer 22, a planarization layer 12, an antireflection layer 22, a transparent substrate 20, an ultraviolet
  • the infrared light reflection film 19 may be provided in this order.
  • the camera module includes a solid-state imaging device 11, a near infrared cut filter 21, an ultraviolet / infrared light reflection film 19, a planarization layer 12, an antireflection layer 22, and a transparent substrate 20. And an antireflection layer 22 in this order.
  • FIG. 5 shows another embodiment of the camera module of the present invention.
  • This camera module is different from the camera module shown in FIG. 1 in that the near infrared cut filter 13 is arranged outside the lens holder 15 in the camera module shown in FIG. That is, in the camera module shown in FIG. 5, the near-infrared cut filter 13 is arranged on the incident light side from the outside with respect to the imaging lens 14.
  • incident light from the outside sequentially passes through the near-infrared cut filter 13, the imaging lens 14, and the planarization layer 12, and then reaches the imaging device portion of the solid-state imaging device 11.
  • the near-infrared cut filter 13 When the near-infrared cut filter 13 is arranged on the incident light side from the outside of the imaging lens 14, even if the near-infrared cut filter has a defect because the distance between the near-infrared cut filter 13 and the light receiving unit increases. These defects are blurred and the influence of these defects on the image can be reduced.
  • the near-infrared cut filter 13 is disposed outside the lens holder 15, but may be disposed within the lens holder 15.
  • the near infrared cut filter 13 is arranged at a predetermined interval from the surface of the imaging lens 14, but the near infrared cut filter 13 may be directly formed on the surface of the imaging lens 14.
  • the imaging lens 14 is one, but the imaging lens 14 may be two or more.
  • the near-infrared cut filter 13 may be disposed on the outer side (incident light side) than the imaging lens 14 disposed on the outermost side (incident light side).
  • a near-infrared cut filter 13 may be disposed between the imaging lenses.
  • the near-infrared cut filter, the imaging lens, and the imaging lens may be arranged in this order from the incident light side.
  • the imaging lens, the near-infrared cut filter, and the imaging lens Each may be arranged in order.
  • the image display device of the present invention has the near infrared cut filter of the present invention.
  • the near-infrared cut filter of the present invention can also be used for image display devices such as liquid crystal display devices and organic electroluminescence (organic EL) display devices.
  • image display devices such as liquid crystal display devices and organic electroluminescence (organic EL) display devices.
  • organic EL organic electroluminescence
  • display devices and details of each display device refer to, for example, “Electronic Display Devices (Akio Sasaki, published by Kogyo Kenkyukai 1990)”, “Display Devices (Junaki Ibuki, Sangyo Tosho Co., Ltd.) Issued in the first year).
  • the liquid crystal display device is described in, for example, “Next-generation liquid crystal display technology (edited by Tatsuo Uchida, published by Kogyo Kenkyukai 1994)”.
  • the liquid crystal display device to which the present invention can be applied is not particularly limited, and can be applied to, for example, various types of liquid crystal display devices described in the “next generation liquid crystal display technology”.
  • the image display device may have a white organic EL element.
  • the white organic EL element preferably has a tandem structure.
  • JP 2003-45676 A supervised by Akiyoshi Mikami, “Frontier of Organic EL Technology Development-High Brightness, High Precision, Long Life, Know-how Collection”, Technical Information Association, 326-328 pages, 2008, etc.
  • the spectrum of white light emitted from the organic EL element preferably has a strong maximum emission peak in the blue region (430 nm to 485 nm), the green region (530 nm to 580 nm) and the yellow region (580 nm to 620 nm). In addition to these emission peaks, those having a maximum emission peak in the red region (650 nm to 700 nm) are more preferable.
  • Examples 1 to 13 Comparative Example 1
  • the materials shown in the following table were mixed in the blending amounts (parts by mass) shown in the following table to prepare a near infrared ray absorbing composition having a solid content concentration of 62% by mass.
  • the solid content concentration of the near-infrared absorbing composition was adjusted by adjusting the amount of cyclopentanone.
  • Example 14 to 21 The materials shown in the following table were mixed in the blending amounts (parts by mass) shown in the following table to prepare near-infrared absorbing compositions having solid content concentrations shown in the following table.
  • the solid content concentrations of the near-infrared absorbing compositions of Examples 14 to 21 were adjusted by adjusting the amounts of the solvents listed in the following table.
  • CP cyclopentanone
  • Example 15 to 21 a mixed solvent containing CP (cyclopentanone) and the solvents described in the following table in a mass ratio described in the following table was used as the solvent.
  • JP2011-100084A 8-methyl-8-methoxycarbonyltetracyclo [4.4.0.1 2,5 . 1 7,10 ] 100 parts by weight of dodec-3-ene, 18 parts by weight of 1-hexene, and 300 parts by weight of toluene were charged into a reaction vessel purged with nitrogen, and the solution was heated to 80 ° C.
  • a sol-gel cured product synthesized according to the method described in paragraphs 0079 to 0088 of JP-A-2014-203044 was used. That is, a material in which the blending ratio of phenyltriethoxysilane and tetraethoxysilane was set to 50:50 was used as a raw material for the sol-gel film. Cyclopentanone was used as the solvent.
  • an acidic catalyst 1 mol / liter of hydrochloric acid was used, and 6 mol of water was administered to 1 mol of Si, followed by stirring at room temperature for about 4 hours to obtain a sol-gel cured product.
  • W-2 polyfox PF6320 (manufactured by OMNOVA)
  • W-3 KF6001 (manufactured by Shin-Etsu Silicone)
  • Example 1 ⁇ Production of near-infrared cut filter> (Examples 1 to 12, 14 and Comparative Example 1)
  • a near-infrared absorbing composition layer was spin-coated on a glass substrate on which a Kapton film (thickness: 100 ⁇ m, manufactured by Toray DuPont) was attached to form a near-infrared absorbing composition layer.
  • the near-infrared absorbing composition layer is heated at 150 ° C. for 10 minutes using a hot plate to form a resin film of about 40 ⁇ m. did.
  • the near-infrared absorbing composition was spin-coated on the resin layer, and drying and heating under the same conditions were repeated 4 times. Thereafter, the resin was cured by heating at 150 ° C. for 90 minutes to form a 200 ⁇ m thick resin film.
  • the resin film was manually peeled from the glass substrate to produce a near infrared cut filter (resin film).
  • the resin film was measured for Si value, peak temperature and peak half-value width of loss tangent tan ⁇ in dynamic viscoelastic properties, tensile modulus, Vickers hardness, linear expansion coefficient, and tensile strength. The results are shown in the table below.
  • the sample comparativative example 1
  • the sample of the size which can be used for a measurement was selected, and various measurements were performed.
  • Example 13 A near-infrared absorbing composition layer was spin-coated on a glass substrate on which a Kapton film (thickness: 100 ⁇ m, manufactured by Toray DuPont) was attached to form a near-infrared absorbing composition layer.
  • a Kapton film thinness: 100 ⁇ m, manufactured by Toray DuPont
  • the near-infrared absorbing composition layer is heated at 150 ° C. for 10 minutes using a hot plate to form a resin film of about 40 ⁇ m. did.
  • the near-infrared absorbing composition was spin-coated on the resin layer, and drying and heating under the same conditions were repeated 4 times. Thereafter, the resin was cured by heating at 150 ° C.
  • the cured resin film was subjected to a high temperature and high humidity treatment for 72 hours in a high temperature and high humidity furnace having a temperature of 85 ° C. and a humidity of 85%.
  • the resin film after the high-temperature and high-humidity treatment was manually peeled from the glass substrate to produce a near-infrared cut filter (resin film).
  • the resin film was measured for Si value, peak temperature and peak half-value width of loss tangent tan ⁇ in dynamic viscoelastic properties, tensile modulus, Vickers hardness, linear expansion coefficient, and tensile strength. The results are shown in the table below.
  • a near-infrared absorbing composition layer was spin-coated on a glass substrate on which a Kapton film (thickness: 100 ⁇ m, manufactured by Toray DuPont) was attached to form a near-infrared absorbing composition layer.
  • the near-infrared absorbing composition layer was dried at 100 ° C. for 120 seconds using a hot plate, and then the near-infrared absorbing composition layer was heated at 150 ° C. for 10 minutes using a hot plate to form a resin film.
  • a near-infrared absorbing composition was spin-coated on the resin layer, and drying and heating under the same conditions were repeated 10 to 50 times to form a resin film having a thickness of 200 ⁇ m.
  • the resin film was manually peeled from the glass substrate to produce a near infrared cut filter (resin film).
  • the resin film was measured for Si value, peak temperature and peak half-value width of loss tangent tan ⁇ in dynamic viscoelastic properties, tensile modulus, Vickers hardness, linear expansion coefficient, and tensile strength.
  • Absorbance change rate at a wavelength of 400 nm (%)
  • D 10% ⁇ change rate of absorbance at a wavelength of 400 nm
  • ⁇ Moisture resistance> The near-infrared cut filter (resin film) was allowed to stand for 500 hours in an environment of 85 ° C. and a relative humidity of 85%, and a moisture resistance test was performed. Before and after the moisture resistance test, the absorbance at a wavelength of 400 nm of the near-infrared cut filter was measured, and the change rate of the absorbance at a wavelength of 400 nm was determined from the following formula. The moisture resistance was evaluated according to the following criteria.
  • ⁇ Low temperature resistance> A near-infrared cut filter (resin film) was allowed to stand at ⁇ 40 ° C. for 500 hours to conduct a low temperature resistance test. Before and after the low temperature resistance test, the absorbance of the near-infrared cut filter at a wavelength of 400 nm was measured, and the change rate of the absorbance at a wavelength of 400 nm was determined from the following formula. The moisture resistance was evaluated according to the following criteria.
  • Absorbance change rate at a wavelength of 400 nm (%)
  • D 10% ⁇ change rate of absorbance at a wavelength of 400 nm
  • ⁇ Heat shock resistance> A thermal shock resistance test was conducted on the near-infrared cut filter (resin film) by repeating a temperature raising / lowering cycle of -40 ° C. for 10 minutes and 100 ° C. for 10 minutes for 500 cycles.
  • the thermal shock resistance of the near infrared cut filter (resin film) was evaluated according to the following criteria. For the evaluation, a temperature cycle tester (air tank type) WINTECH (manufactured by Enomoto Kasei Co., Ltd.) was used.
  • B Film surface irregularities (cracks and / or peeling) occurred in 100 cycles or more and less than 500 cycles.
  • C Film surface abnormalities (cracks and / or peeling) occurred at 10 cycles or more and less than 100 cycles.
  • D Film surface abnormalities (cracks and / or peeling) occurred in less than 10 cycles
  • ⁇ Peelability> The resin film was manually peeled from the glass substrate on which the Kapton film was attached. The peelability was evaluated according to the following criteria. A: The resin film was peelable from the glass substrate. D: The resin film could not be peeled or the resin film was cracked during peeling.
  • the transmittance of the near-infrared cut filter was measured using U-4100 (manufactured by Hitachi High-Technologies Corporation). Specifically, the measurement wavelength range was 400 to 1300 nm, and the transmittance was measured every 5 nm. The average value of the transmittance was calculated by dividing the sum of the transmittances every 5 nm by the wavelength range.
  • the reflectance was measured using U-4100 (manufactured by Hitachi High-Technologies Corporation). The measurement was performed by setting the normal direction with respect to the surface of the near-infrared cut filter to 0 ° and the incident angle to 5 °.
  • the examples were excellent in thermal shock resistance. Furthermore, it was excellent in any of heat resistance, moisture resistance and low temperature resistance. Moreover, in the Example, the peelability with the base material of the resin film was favorable.
  • Example 101 The near-infrared cut filter (resin film) of Example 1 was incorporated in a camera module having the configuration shown in FIG. When an image was taken using this camera module, a clear image was obtained.
  • Example 102 The near-infrared cut filter (resin film) of Example 1 was incorporated into a camera module having the configuration shown in FIG. When an image was taken using this camera module, a clear image was obtained.
  • Example 103 In Example 102, the structure shown in FIG. 5 was used in the same manner as in Example 102, except that a laminate of the resin film (near infrared cut filter) of Example 1 and sapphire glass was used as the near infrared cut filter. A camera module was manufactured. When an image was taken using this camera module, a clear image was obtained.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Optical Filters (AREA)
  • Blocking Light For Cameras (AREA)
  • Camera Bodies And Camera Details Or Accessories (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un filtre de coupure proche infrarouge ayant une excellente résistance aux chocs thermiques. L'invention concerne également un dispositif d'imagerie à semi-conducteurs, un module de caméra et un dispositif d'affichage d'image, qui ont le filtre de coupure proche infrarouge ayant une excellente résistance aux chocs thermiques. Ce filtre de coupure proche infrarouge comprend un film de résine contenant un complexe de cuivre et une résine. Le film de résine a un module d'élasticité en traction à 25 °C de 0,5 à 10 GPa, et a un pic de tangente de perte viscoélastique dynamique tan δ dans la plage de 80-160 °C, telle que mesurée dans des conditions d'une fréquence de 1 Hz et d'une vitesse de chauffage de 5 °C/min, la largeur à mi-hauteur du pic étant de 1-50° C
PCT/JP2017/025526 2016-09-21 2017-07-13 Filtre de coupure proche infrarouge, dispositif d'imagerie à semi-conducteurs, module de caméra et dispositif d'affichage d'image Ceased WO2018055880A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018540650A JP6717955B2 (ja) 2016-09-21 2017-07-13 近赤外線カットフィルタ、固体撮像素子、カメラモジュールおよび画像表示装置

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2016184023 2016-09-21
JP2016-184023 2016-09-21
JP2016203439 2016-10-17
JP2016-203439 2016-10-17
JP2016217752 2016-11-08
JP2016-217752 2016-11-08

Publications (1)

Publication Number Publication Date
WO2018055880A1 true WO2018055880A1 (fr) 2018-03-29

Family

ID=61690270

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/025526 Ceased WO2018055880A1 (fr) 2016-09-21 2017-07-13 Filtre de coupure proche infrarouge, dispositif d'imagerie à semi-conducteurs, module de caméra et dispositif d'affichage d'image

Country Status (3)

Country Link
JP (1) JP6717955B2 (fr)
TW (1) TW201814334A (fr)
WO (1) WO2018055880A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022156603A (ja) * 2021-03-31 2022-10-14 三菱ケミカル株式会社 樹脂組成物、フィルム、積層フィルムおよび機能性フィルム

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019208518A1 (fr) * 2018-04-27 2019-10-31 日本板硝子株式会社 Filtre optique et composition pour filtre optique
US20240027665A1 (en) * 2022-07-19 2024-01-25 Lms Co., Ltd. Basic layer for an optical filter

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007094191A (ja) * 2005-09-29 2007-04-12 Dainippon Printing Co Ltd フラットディスプレイ用耐衝撃吸収材、プラズマディスプレイ用光学フィルタ、プラズマディスプレイパネル、及びフラットディスプレイ用耐衝撃吸収材の製造方法
WO2010119683A1 (fr) * 2009-04-14 2010-10-21 株式会社日本触媒 Composition adhésive pouvant absorber les rayons du proche infrarouge
JP2012116940A (ja) * 2010-11-30 2012-06-21 Dainippon Printing Co Ltd 粘着剤組成物およびプラズマディスプレイ用複合フィルタ
JP2015210478A (ja) * 2014-04-30 2015-11-24 富士フイルム株式会社 近赤外線カットフィルタおよびその製造方法、カメラモジュールおよびその製造方法、緩衝層形成用組成物、ならびに、積層体およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6094525B2 (ja) * 2014-04-30 2017-03-15 コニカミノルタ株式会社 画像形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007094191A (ja) * 2005-09-29 2007-04-12 Dainippon Printing Co Ltd フラットディスプレイ用耐衝撃吸収材、プラズマディスプレイ用光学フィルタ、プラズマディスプレイパネル、及びフラットディスプレイ用耐衝撃吸収材の製造方法
WO2010119683A1 (fr) * 2009-04-14 2010-10-21 株式会社日本触媒 Composition adhésive pouvant absorber les rayons du proche infrarouge
JP2012116940A (ja) * 2010-11-30 2012-06-21 Dainippon Printing Co Ltd 粘着剤組成物およびプラズマディスプレイ用複合フィルタ
JP2015210478A (ja) * 2014-04-30 2015-11-24 富士フイルム株式会社 近赤外線カットフィルタおよびその製造方法、カメラモジュールおよびその製造方法、緩衝層形成用組成物、ならびに、積層体およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022156603A (ja) * 2021-03-31 2022-10-14 三菱ケミカル株式会社 樹脂組成物、フィルム、積層フィルムおよび機能性フィルム

Also Published As

Publication number Publication date
JPWO2018055880A1 (ja) 2019-06-24
TW201814334A (zh) 2018-04-16
JP6717955B2 (ja) 2020-07-08

Similar Documents

Publication Publication Date Title
JP6806706B2 (ja) 近赤外線吸収組成物、近赤外線カットフィルタ、近赤外線カットフィルタの製造方法、固体撮像素子、カメラモジュールおよび画像表示装置
JP6602396B2 (ja) 近赤外線吸収組成物、近赤外線カットフィルタの製造方法、近赤外線カットフィルタ、固体撮像素子、カメラモジュール、赤外線センサおよび赤外線吸収剤
JP6650040B2 (ja) 近赤外線カットフィルタ、固体撮像素子、カメラモジュールおよび画像表示装置
JP6329638B2 (ja) 近赤外線吸収性組成物、近赤外線カットフィルタ、固体撮像素子、カメラモジュール
JP6243027B2 (ja) 近赤外線吸収性組成物、近赤外線カットフィルタ、近赤外線カットフィルタの製造方法、固体撮像素子、カメラモジュール
JP6611278B2 (ja) 近赤外線吸収組成物、近赤外線カットフィルタ、近赤外線カットフィルタの製造方法、固体撮像素子、カメラモジュールおよび画像表示装置
JP2015017244A (ja) 硬化性組成物、硬化膜、近赤外線カットフィルタ、カメラモジュールおよびカメラモジュールの製造方法
WO2017056803A1 (fr) Filtre de coupure dans l'infrarouge proche, procédé de fabrication d'un filtre de coupure dans l'infrarouge proche, et élément de capture d'image solide
JP6709029B2 (ja) 組成物、組成物の製造方法、膜、近赤外線カットフィルタ、固体撮像素子、カメラモジュールおよび画像表示装置
KR20180107268A (ko) 경화성 조성물, 차광막, 컬러 필터, 패턴 형성 방법, 컬러 필터의 제조 방법, 고체 촬상 소자, 적외선 센서
WO2015012322A1 (fr) Composition absorbant l'infrarouge proche, filtre de coupure de l'infrarouge proche obtenu en l'utilisant, procédé de production dudit filtre de coupure, module pour appareil photo et procédé pour produire ledit module, et élément photographique solide
JP6717955B2 (ja) 近赤外線カットフィルタ、固体撮像素子、カメラモジュールおよび画像表示装置
JP6793808B2 (ja) 近赤外線カットフィルタ、固体撮像素子、カメラモジュールおよび画像表示装置
JP6563014B2 (ja) 近赤外線吸収性組成物、近赤外線カットフィルタ、近赤外線カットフィルタの製造方法、装置、銅含有ポリマーの製造方法および銅含有ポリマー
WO2018168231A1 (fr) Filtre bloquant l'infrarouge proche, procédé de production de filtre bloquant l'infrarouge proche, élément d'imagerie à semi-conducteurs, module de caméra et dispositif d'affichage d'image
US20240192414A1 (en) Laminate, visual-line tracking system, and head-mounted display
JP6602387B2 (ja) 近赤外線吸収組成物、膜、近赤外線カットフィルタおよび固体撮像素子
JP6400654B2 (ja) 硬化性組成物、硬化膜、近赤外線カットフィルタ、カメラモジュールおよびカメラモジュールの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17852661

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2018540650

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17852661

Country of ref document: EP

Kind code of ref document: A1