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WO2017094087A1 - Dispositif luminescent - Google Patents

Dispositif luminescent Download PDF

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Publication number
WO2017094087A1
WO2017094087A1 PCT/JP2015/083650 JP2015083650W WO2017094087A1 WO 2017094087 A1 WO2017094087 A1 WO 2017094087A1 JP 2015083650 W JP2015083650 W JP 2015083650W WO 2017094087 A1 WO2017094087 A1 WO 2017094087A1
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WO
WIPO (PCT)
Prior art keywords
electrode
emitting device
light emitting
organic layer
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2015/083650
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English (en)
Japanese (ja)
Inventor
真滋 中嶋
幸二 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku Pioneer Corp
Pioneer Corp
Original Assignee
Tohoku Pioneer Corp
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Pioneer Corp, Pioneer Corp filed Critical Tohoku Pioneer Corp
Priority to PCT/JP2015/083650 priority Critical patent/WO2017094087A1/fr
Priority to JP2017553510A priority patent/JPWO2017094087A1/ja
Publication of WO2017094087A1 publication Critical patent/WO2017094087A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements

Definitions

  • the present invention relates to a light emitting device.
  • An organic EL element is one of light sources of light emitting devices such as lighting devices and display devices.
  • the organic EL element has a configuration in which an organic layer is disposed between the first electrode and the second electrode.
  • an insulating layer may be used to define a light emitting portion of the organic EL element (for example, Patent Document 1).
  • Patent Document 1 further describes that a sealing film is used to seal the organic EL element.
  • the sealing film is formed using silicon nitride.
  • the end portion of the organic layer and the end portion of the second electrode may be located on the insulating layer for defining the light emitting portion of the organic EL element.
  • the present invention in a light-emitting device having a coating film covering a light-emitting portion, it is necessary to prevent the organic layer from deteriorating from a portion located on the insulating layer among the end portions of the organic layer. As an example.
  • the invention according to claim 1 is a substrate; A light emitting unit formed on the substrate and having a first electrode, a second electrode, and an organic layer positioned between the first electrode and the second electrode; An insulating layer defining the light emitting portion; A coating film covering at least a part of the light emitting portion and the insulating layer; With On at least a part of the insulating layer, The second electrode covers an end of the organic layer; The coating film is a light emitting device that covers an end of the second electrode.
  • FIG. 6 is a cross-sectional view taken along line AA in FIG. 5.
  • FIG. 6 is a sectional view taken along line BB in FIG. 5.
  • FIG. 6 is a cross-sectional view taken along the line CC of FIG. It is sectional drawing which shows the 1st example of the manufacturing method of a light-emitting device. It is sectional drawing which shows the 2nd example of the manufacturing method of a light-emitting device. It is sectional drawing which shows the 3rd example of the manufacturing method of a light-emitting device.
  • FIG. 1 is a cross-sectional view showing a configuration of a light emitting device 10 according to an embodiment.
  • the light emitting device 10 includes a substrate 100, a light emitting unit 140, an insulating layer 150, and a coating film 200.
  • the light emitting unit 140 is formed on the substrate 100 and includes the first electrode 110, the organic layer 120, and the second electrode 130.
  • the organic layer 120 is located between the first electrode 110 and the second electrode 130.
  • the insulating layer 150 defines the light emitting part 140.
  • the coating film 200 covers at least a part of the light emitting unit 140 and the insulating layer 150.
  • the second electrode 130 covers the end of the organic layer 120 on at least a part of the insulating layer 150.
  • the covering film 200 covers the end portion of the second electrode 130. In the example shown in this drawing, both the second electrode 130 and the coating film 200 are in contact with the insulating layer 150.
  • the light emitting device 10 will be described in detail.
  • the light emitting device 10 may be either a bottom emission type light emitting device or a top emission type light emitting device.
  • the substrate 100 is formed of a light transmissive material such as glass or a light transmissive resin, and the surface of the substrate 100 opposite to the first electrode 110. Is the light extraction surface of the light emitting device 10.
  • the substrate 100 may be formed of the above-described translucent material or may be formed of a material that does not have translucency.
  • the substrate 100 is, for example, a polygon such as a rectangle. Further, the substrate 100 may have flexibility.
  • the thickness of the substrate 100 is, for example, not less than 10 ⁇ m and not more than 1000 ⁇ m. In particular, when the substrate 100 is made of a glass material and has flexibility, the thickness of the substrate 100 is, for example, 200 ⁇ m or less.
  • the material of the substrate 100 includes, for example, PEN (polyethylene naphthalate), PES (polyethersulfone), PET (polyethylene terephthalate), or polyimide. Is formed.
  • an inorganic barrier film such as SiN x or SiON is formed on at least the light emitting surface (preferably both surfaces) of the substrate 100 in order to suppress moisture from passing through the substrate 100. ing.
  • the light emitting unit 140 includes a first electrode 110, a second electrode 130, and an organic layer 120.
  • first electrode 110 and the second electrode 130 at least the electrode on the light emitting side is a transparent electrode having light transmittance. Note that both the first electrode 110 and the second electrode 130 may be transparent electrodes.
  • the transparent conductive material constituting the transparent electrode is a metal-containing material, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), ZnO (Zinc Oxide) or the like. is there.
  • the thickness of the first electrode 110 is, for example, not less than 10 nm and not more than 500 nm.
  • the first electrode 110 is formed using, for example, a sputtering method or a vapor deposition method.
  • the first electrode 110 may be a carbon nanotube, a conductive organic material such as PEDOT / PSS, or a thin metal electrode.
  • the non-transparent electrode is selected from, for example, a first group consisting of Al, Au, Ag, Pt, Mg, Sn, Zn, and In. Or a metal layer made of an alloy of metals selected from the first group.
  • This electrode is formed using, for example, a sputtering method or a vapor deposition method. Further, this electrode may have a structure in which a metal layer and a transparent conductive layer are laminated in this order.
  • the thickness of the second electrode 130 is, for example, not less than 60 nm and not more than 200 nm.
  • the organic layer 120 has, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
  • the hole injection layer and the hole transport layer are formed using a material in which holes move (a hole-moving organic material).
  • the thickness of the hole injection layer is, for example, not less than 50 nm and not more than 100 nm.
  • the hole transport layer is thinner than the hole injection layer, and the thickness thereof is, for example, 20 nm or more and 50 nm or less.
  • the light emitting layer is formed using a material that emits light upon recombination of electrons and holes.
  • the luminescent color of the light emitting layer may be any color.
  • the electron transport layer is formed using a material (electron mobility organic material) through which electrons move.
  • the thickness of the electron transport layer is, for example, 5 nm or more and 100 nm or less.
  • the electron injection layer is formed using, for example, an alkali metal compound such as LiF, a metal oxide typified by aluminum oxide, or a metal complex typified by lithium 8-hydroxyquinolate (Liq).
  • the thickness of the electron injection layer is, for example, not less than 0.1 nm and not more than 10 nm.
  • the total thickness of the organic layer 120 is, for example, not less than 50 nm and not more than 200 nm.
  • One of the hole injection layer and the hole transport layer may be omitted.
  • One of the electron transport layer and the electron injection layer may be omitted.
  • At least one (or all) of each layer constituting the organic layer 120 is formed using a coating material.
  • the film forming method used here is, for example, a coating method such as an inkjet method, a printing method, or a spray method.
  • at least one (or all) of the hole injection layer, the hole transport layer, and the light emitting layer in the organic layer 120 may be formed using a coating material.
  • the remaining layers of the organic layer 120 are formed using a vapor deposition method.
  • the region of the substrate 100 where the light emitting unit 140 is to be formed is surrounded by the insulating layer 150.
  • the insulating layer 150 covers the first electrode 110.
  • the insulating layer 150 has an opening 152 in a part of the region overlapping with the first electrode 110. Within the opening 152, the first electrode 110 is in contact with the organic layer 120. In other words, the first electrode 110, the organic layer 120, and the second electrode 130 are overlapped at a portion overlapping the opening 152 of the insulating layer 150, and the organic EL element, that is, the light emitting portion 140 is formed by this stacked portion.
  • the insulating layer 150 is formed using, for example, an inorganic material, and the thickness thereof is, for example, not less than 50 nm and not more than 500 nm.
  • the inorganic material constituting the insulating layer 150 is preferably a material having higher water repellency than photosensitive polyimide. Such a material is, for example, at least one of silicon oxide, silicon nitride, and silicon oxynitride.
  • the insulating layer 150 may include at least two of these.
  • the opening 152 of the insulating layer 150 may be formed by covering a region to be the opening 152 with a mask pattern when the insulating layer 150 is formed using a vapor phase method such as a CVD method or a sputtering method. Note that the opening 152 may be formed by an etching process using a resist pattern.
  • the insulating layer 150 may be formed using a photosensitive organic material such as polyimide.
  • the opening 152 of the insulating layer 150 is formed through exposure and development processes.
  • the light emitting unit 140 is sealed with the coating film 200.
  • the covering film 200 is formed on at least the surface of the substrate 100 where the light emitting part 140 is formed, and covers the light emitting part 140.
  • the covering film 200 is formed of, for example, an insulating material, more specifically, a metal oxide such as aluminum oxide or titanium oxide.
  • the thickness of the coating film 200 is preferably 300 nm or less. Further, the thickness of the coating film 200 is, for example, 50 nm or more.
  • the coating film 200 is formed using, for example, an ALD (Atomic Layer Deposition) method. In this case, the step coverage of the coating film 200 is increased.
  • the coating film 200 may have a multilayer structure in which a plurality of layers are stacked. In this case, it may have a structure in which a first sealing layer made of a first material (for example, aluminum oxide) and a second sealing layer made of a second material (for example, titanium oxide) are repeatedly stacked. .
  • the lowermost layer may be either the first sealing layer or the second sealing layer. Further, the uppermost layer may be either the first sealing layer or the second sealing layer.
  • the coating film 200 may be a single layer in which the first material and the second material are mixed.
  • the coating film 200 may be formed using other film forming methods such as a CVD method or a sputtering method.
  • the coating film 200 is formed of an insulating film such as SiO 2 or SiN, and the film thickness is, for example, not less than 10 nm and not more than 1000 nm.
  • the end of the organic layer 120 is located on the insulating layer 150.
  • the end portion of the organic layer 120 overlaps the insulating layer 150.
  • the second electrode 130 covers the end portion of the organic layer 120 and is in contact with the insulating layer 150.
  • the second electrode 130 also covers the side surface of the end portion of the organic layer 120.
  • the end portion of the organic layer 120 may be positioned on the side surface of the insulating layer 150.
  • the end portion of the second electrode 130 may also be located on the side surface of the insulating layer 150.
  • the end portion of the second electrode 130 is also located on the insulating layer 150. In other words, the end portion of the second electrode 130 overlaps the insulating layer 150.
  • the covering film 200 covers the end portion of the second electrode 130 and is in contact with the insulating layer 150. For example, when the side surface is formed at the end portion of the second electrode 130, the coating film 200 also covers the side surface of the end portion of the second electrode 130.
  • a resin layer for protecting the coating film 200 may be provided on the coating film 200.
  • This resin layer is formed using an epoxy resin or an acrylic resin.
  • FIG. 2 is a cross-sectional view showing a first example of a manufacturing method of the light emitting device 10 shown in FIG.
  • the insulating layer 150 is formed using a material having higher water repellency than photosensitive polyimide, for example, at least one of silicon oxide, silicon nitride, and silicon oxynitride.
  • the first electrode 110 is formed on the substrate 100.
  • the insulating layer 150 is formed on the first electrode 110.
  • an opening 152 is formed in the insulating layer 150.
  • the organic layer 120 is formed on the first electrode 110.
  • the organic layer 120 is heat-treated.
  • This heat treatment is performed, for example, in a processing container in which the organic layer 120 is formed, and the temperature is, for example, 100 ° C. or more and 200 ° C. or less.
  • liquidity of the organic layer 120 improves.
  • the insulating layer 150 is formed using a material having high water repellency. Accordingly, the portion of the organic layer 120 that overlaps the insulating layer 150 moves into the opening 152 of the insulating layer 150, and as a result, the end of the organic layer 120 is positioned on the insulating layer 150.
  • the second electrode 130 is formed using a vapor deposition method or a sputtering method.
  • the end portion of the organic layer 120 is covered with the second electrode 130.
  • the end portion of the second electrode 130 is positioned on the insulating layer 150 by using, for example, a mask pattern.
  • the coating film 200 is formed.
  • the coating film 200 covers the end portion of the second electrode 130 and is in contact with the insulating layer 150. In this way, the light emitting device 10 shown in FIG. 1 is formed.
  • the entire organic layer 120 may be located inside the opening 152 as shown in FIG.
  • the end of the organic layer 120 (including the corner in the planar shape) is covered with the second electrode 130.
  • the interface between the organic layer 120 and the insulating layer 150 is also covered with the second electrode 130.
  • FIG. 4 is a cross-sectional view showing a second example of the method for manufacturing the light emitting device 10.
  • the manufacturing method of the light emitting device 10 according to the present embodiment is the manufacturing method of the light emitting device 10 shown in FIG. 2 or 3 except that the mask pattern 300 is used when the organic layer 120 is formed by vapor deposition. It is the same as the method. According to this example, since the area
  • the organic layer 120 and the coating film 200 have a region in direct contact, at least the upper layer of the organic layer 120 (for example, an electron injection layer or an electron transport layer) It turned out that it may deteriorate from the contacted part.
  • the luminance of the light emitting unit 140 decreases from a region where the organic layer 120 and the coating film 200 are in direct contact.
  • the decrease in luminance becomes more remarkable as the area where the organic layer 120 and the coating film 200 are in direct contact with each other is larger.
  • the coating film 200 contains titanium oxide (for example, when a titanium oxide layer is included), the above-described phenomenon was confirmed.
  • the end portion of the organic layer 120 is covered with the second electrode 130.
  • the organic layer 120 is not in direct contact with the coating film 200. Therefore, it is possible to suppress the above-described deterioration in the light emitting unit 140.
  • the organic layer 120 is sealed by the first electrode 110, the second electrode 130, and the insulating layer 150. Therefore, when the insulating layer 150 is formed of an inorganic material, it is possible to particularly suppress the deterioration of the organic layer 120.
  • FIG. 5 is a plan view of the light emitting device 10 according to the embodiment.
  • FIG. 6 is a view in which the coating film 200 is removed from FIG. 7 is a view in which the partition 170, the second electrode 130, the organic layer 120, and the insulating layer 150 are removed from FIG. 8 is a cross-sectional view taken along the line AA in FIG. 5,
  • FIG. 8 is a cross-sectional view taken along the line BB in FIG. 5
  • FIG. 9 is a cross-sectional view taken along the line CC in FIG.
  • the light emitting device 10 is a display, and includes a substrate 100, a first electrode 110, a light emitting unit 140, an insulating layer 150, a plurality of openings 152, a plurality of openings 154, a plurality of lead wires 114, an organic layer 120, a first layer. It has two electrodes 130, a plurality of lead wires 134, a plurality of partition walls 170, and a coating film 200.
  • the first electrode 110 extends in a line shape in the first direction (Y direction in FIG. 7). The end portion of the first electrode 110 is connected to the lead wiring 114.
  • the lead wiring 114 is a wiring that connects the first electrode 110 to the first terminal 112.
  • one end side of the lead wiring 114 is connected to the first electrode 110, and the other end side of the lead wiring 114 is the first terminal 112.
  • the first electrode 110 and the lead-out wiring 114 are integrated.
  • a conductor layer 180 is formed on the first terminal 112 and the lead wiring 114.
  • the conductor layer 180 is formed using a metal having a lower resistance than that of the first electrode 110, such as Al or Ag.
  • a part of the lead wiring 114 is covered with an insulating layer 150.
  • the first terminal 112 is electrically connected to the first electrode 110 of the light emitting unit 140, and the second terminal 132 is connected to the second electrode 130 of the light emitting unit 140.
  • the first terminal 112 is located at the end of the lead wiring 114, and at least a part of the layer is integrated with the lead wiring 114.
  • the second terminal 132 is located at the end of the lead wire 134, and at least a part of the layer is integrated with the lead wire 134.
  • the insulating layer 150 is formed on the plurality of first electrodes 110 and in a region therebetween.
  • a plurality of openings 152 and a plurality of openings 154 are formed in the insulating layer 150.
  • the plurality of second electrodes 130 extend in parallel to each other in a direction intersecting the first electrode 110 (for example, a direction orthogonal to the X direction in FIG. 6).
  • a partition wall 170 which will be described in detail later, extends between the plurality of second electrodes 130.
  • the opening 152 is located at the intersection of the first electrode 110 and the second electrode 130 in plan view.
  • the plurality of openings 152 are arranged to form a matrix.
  • the opening 154 is located in a region overlapping with one end side of each of the plurality of second electrodes 130 in plan view.
  • the openings 154 are arranged along one side of the matrix formed by the openings 152. And when it sees in the direction (For example, the Y direction in FIG. 6, ie, the direction in alignment with the 1st electrode 110) along this one side, the opening 154 is arrange
  • the lead wiring 134 is connected to the second electrode 130 through the opening 154.
  • the lead wiring 134 is a wiring that connects the second electrode 130 to the second terminal 132, and has a layer made of the same material as the first electrode 110. One end side of the lead wiring 134 is located below the opening 154, and the other end side of the lead wiring 134 is led out of the insulating layer 150. In the example shown in the figure, the other end side of the lead-out wiring 134 is the second terminal 132. A conductor layer 180 is also formed on the second terminal 132 and the lead wiring 134. A part of the lead wiring 134 is covered with an insulating layer 150.
  • the organic layer 120 is formed in the region overlapping with the opening 152.
  • the light emitting part 140 is located in each of the regions overlapping with the opening 152.
  • the part (side surface) which demarcates the edge of the opening 152 among the insulating layers 150 is inclined, and the organic layer 120 and the second electrode 130 are located also on this part.
  • this portion does not constitute the light emitting unit 140.
  • each layer constituting the organic layer 120 is shown to protrude to the outside of the opening 152. And as shown in FIG. 9, the organic layer 120 may be continuously formed between the adjacent openings 152 in the direction in which the partition 170 extends, or may not be formed continuously. Good. However, as shown in FIG. 10, the organic layer 120 is not formed in the opening 154.
  • the second electrode 130 extends in the second direction (X direction in FIG. 6) intersecting the first direction.
  • a partition wall 170 is formed between the adjacent second electrodes 130.
  • the partition wall 170 extends in parallel to the second electrode 130, that is, in the second direction.
  • the base of the partition 170 is, for example, the insulating layer 150.
  • the partition 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed.
  • the partition wall 170 may be made of a resin other than a polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.
  • the partition wall 170 In the cross section perpendicular to the direction in which the partition wall 170 extends, the partition wall 170 has a trapezoidal shape that is upside down (reverse trapezoid). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. Therefore, if the partition wall 170 is formed before the second electrode 130, the second electrode 130 is formed on one surface side of the substrate 100 by using an evaporation method or a sputtering method. Can be formed collectively.
  • the partition wall 170 also has a function of dividing the organic layer 120.
  • the first electrode 110, the organic layer 120, the second electrode 130, the insulating layer 150, and the partition wall 170 are covered with the coating film 200.
  • a part of the lead wiring 114 and a part of the lead wiring 134 are also covered with the coating film 200. Even if the cross section of the partition wall 170 is an inverted trapezoid,
  • the organic layer 120 and the second electrode 130 are both separated on the insulating layer 150 in the cross section in the direction crossing the partition wall 170.
  • a partition wall 170 is located between the two ends of the organic layer 120 that is divided. Further, a partition wall 170 is located between the two ends of the divided second electrode 130. In other words, the organic layer 120 is divided along the partition 170, and the second electrode 130 is also divided along the partition 170.
  • the end of the second electrode 130 is not in contact with the partition 170, and the end of the organic layer 120 is not in contact with the partition 170.
  • the edge part of the organic layer 120 is located outside the upper surface of the partition wall 170. In other words, when viewed from a direction perpendicular to the substrate 100, the organic layer 120 does not overlap the partition wall 170. Since the organic layer 120 and the partition wall 170 are not in contact with each other, intrusion of deterioration factors such as moisture contained in the partition wall 170 can be prevented. And the edge part of any organic layer 120 is covered with the 2nd electrode 130.
  • the covering film 200 also covers a portion where the partition wall 170 and the insulating layer 150 are in contact with each other, and is in contact with the insulating layer 150 in this portion and its surroundings. For this reason, the edge part of the 2nd electrode 130 located in the both sides of the partition 170 and the side surface and upper surface of the partition 170 are covered continuously. And the edge part of any 2nd electrode 130 is covered with the coating film 200.
  • the coating film 200 may be formed by using a film forming method with high step coverage, for example, an ALD method.
  • a resin layer for protecting the coating film 200 may be provided as in the embodiment.
  • the first electrode 110 and the lead wires 114 and 134 are formed on the substrate 100. These forming methods are the same as the method of forming the first electrode 110 in the embodiment.
  • the conductor layer 180 is formed on the lead wiring 114, on the first terminal 112, on the lead wiring 134, and on the second terminal 132.
  • an insulating layer 150 is formed, and a partition wall 170 is further formed.
  • the insulating layer 150 is formed using a material having higher water repellency than photosensitive polyimide, for example, at least one of silicon oxide, silicon nitride, and silicon oxynitride.
  • the organic layer 120 is heat-treated. As a result, the fluidity of the organic layer 120 is improved. As a result, as shown in FIG. 11B, a part of the organic layer 120 that overlaps the insulating layer 150 is part of the opening 152 of the insulating layer 150. Move to. The end portion of the organic layer 120 is located on the insulating layer 150 and at a location that does not overlap with the upper surface of the partition wall 170.
  • the second electrode 130 is formed by using, for example, a vapor deposition method or a sputtering method.
  • the upper surface of the partition 170 serves as a mask, and the second electrode 130 is divided.
  • the end portion of the organic layer 120 is located in a place where it does not overlap with the upper surface of the partition wall 170. Therefore, the end portion of the organic layer 120 is covered with the second electrode 130. Further, the end portion of the second electrode 130 is in contact with the insulating layer 150.
  • the coating film 200 is formed using, for example, an ALD method. Thereby, the end portion of the second electrode 130 is covered with the coating film 200.
  • FIG. 12 is a cross-sectional view showing a second example of the method for manufacturing the light emitting device 10.
  • the manufacturing method of the light emitting device 10 shown in this example is the same as the first example described with reference to FIG. 11 except for the manufacturing method of the organic layer 120 and the manufacturing method of the second electrode 130.
  • the method for manufacturing the light-emitting device 10 shown in this example does not have a heat treatment step for improving the fluidity of the organic layer 120. For this reason, the edge part of the organic layer 120 may overlap with the upper surface of the partition wall 170. Instead, as shown in FIG. 12, the second electrode 130 is deposited from an oblique direction. Thereby, even if the partition wall 170 exists, the end portion of the organic layer 120 is covered with the second electrode 130.
  • FIG. 13 is a cross-sectional view showing a third example of the method for manufacturing the light emitting device 10.
  • the manufacturing method of the light emitting device 10 shown in this example is the same as the first example described with reference to FIG. 11 except for the manufacturing method of the organic layer 120.
  • a mask pattern 300 is used when the organic layer 120 is formed by vapor deposition. Thereby, the edge part of the organic layer 120 is located in the place which does not overlap with the upper surface of the partition 170. Thereafter, the second electrode 130 and the coating film 200 are formed using the same method as in the first example.
  • the insulating layer 150 may be formed using a photosensitive material.
  • the end portion of the organic layer 120 is covered with the second electrode 130 even though the partition wall 170 is present. For this reason, it can suppress that the light emission part 140 deteriorates similarly to embodiment.
  • the organic layer 120 is sealed by the first electrode 110, the second electrode 130, and the insulating layer 150. Therefore, when the insulating layer 150 is formed of an inorganic material, it is possible to particularly suppress the deterioration of the organic layer 120.

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  • Electroluminescent Light Sources (AREA)

Abstract

Selon l'invention, une unité luminescente (140) est formée sur un substrat (100) et possède une première électrode (110), une couche organique (120) et une deuxième électrode (130). La couche organique (120) est située entre la première électrode (110) et la deuxième électrode (130). Une couche isolante (150) délimite l'unité luminescente (140). Une membrane (200) de revêtement recouvre l'unité luminescente (140) et au moins une partie de la couche isolante (150). En outre, sur au moins une partie de la couche isolante (150), la deuxième électrode (130) recouvre une extrémité de la couche organique (120) et est en contact avec la couche isolante (150). De plus, la couche isolante (200) recouvre une extrémité de la deuxième électrode (130) et est en contact avec la couche isolante (150).
PCT/JP2015/083650 2015-11-30 2015-11-30 Dispositif luminescent Ceased WO2017094087A1 (fr)

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PCT/JP2015/083650 WO2017094087A1 (fr) 2015-11-30 2015-11-30 Dispositif luminescent
JP2017553510A JPWO2017094087A1 (ja) 2015-11-30 2015-11-30 発光装置

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