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WO2016129114A1 - Dispositif électroluminescent et procédé de production d'un dispositif électroluminescent - Google Patents

Dispositif électroluminescent et procédé de production d'un dispositif électroluminescent Download PDF

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Publication number
WO2016129114A1
WO2016129114A1 PCT/JP2015/054010 JP2015054010W WO2016129114A1 WO 2016129114 A1 WO2016129114 A1 WO 2016129114A1 JP 2015054010 W JP2015054010 W JP 2015054010W WO 2016129114 A1 WO2016129114 A1 WO 2016129114A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating layer
light emitting
layer
emitting device
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2015/054010
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English (en)
Japanese (ja)
Inventor
修一 関
真滋 中嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku Pioneer Corp
Pioneer Corp
Original Assignee
Tohoku Pioneer Corp
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Pioneer Corp, Pioneer Corp filed Critical Tohoku Pioneer Corp
Priority to PCT/JP2015/054010 priority Critical patent/WO2016129114A1/fr
Publication of WO2016129114A1 publication Critical patent/WO2016129114A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers

Definitions

  • the present invention relates to a light emitting device and a method for manufacturing the light emitting device.
  • organic EL elements are increasingly used as light sources for light emitting devices and the like.
  • the organic EL element has a configuration in which an organic layer is sandwiched between a first electrode and a second electrode. And in order to demarcate the light emission area of an organic EL element, the light-emitting device has an insulating layer. On the other hand, the organic layer is vulnerable to moisture.
  • Patent Document 1 describes that when an organic insulating film is used as an insulating film for defining an organic EL element, peripheral deterioration occurs in the organic EL element. Further, in Patent Document 1, when an organic insulating film is formed on a wiring and an upper electrode of an organic EL element is formed on the organic insulating film, the wiring and the upper electrode are viewed from the substrate side. It is described that this peripheral deterioration can be suppressed by forming a gap between them.
  • Patent Document 2 describes that the outgas from the insulating film is suppressed by covering the upper surface and side surfaces of the insulating film defining the light emitting area of the organic EL element with a barrier film.
  • the organic layer of the light emitting part may be deteriorated due to outgas from the insulating film.
  • An example of a problem to be solved by the present invention is to reduce the amount of outgas generated itself in order to suppress the deterioration of the organic EL element.
  • the invention according to claim 1 is a substrate; A plurality of light emitting portions formed on the substrate and having an organic layer; An insulating layer formed on the substrate and defining the plurality of light emitting portions; Terminals formed on the substrate; Wiring formed on the substrate and electrically connecting the terminal and the light emitting unit; With At least a part of the wiring is covered with the insulating layer, In the insulating layer, the first portion located between the plurality of light emitting portions has a thickness smaller than that of the second portion located on the wiring in the insulating layer.
  • the invention according to claim 6 is a step of forming wiring on the substrate; Forming an insulating layer having a plurality of openings on the substrate, and covering at least a part of the wiring with a part of the insulating layer; Forming an organic layer to be a part of the light emitting part in each of the plurality of openings; With In the step of forming the insulating layer, the film thickness of the first portion which is a portion located between the plurality of openings in the insulating layer is a portion located on the wiring in the insulating layer. This is a method for manufacturing a light-emitting device that is thinner than the thickness of two portions.
  • FIG. 2 is a cross-sectional view taken along the line AA in FIG.
  • FIG. 3 is a cross-sectional view taken along the line BB in FIG.
  • FIG. 2 is a cross-sectional view taken along the line CC of FIG.
  • It is a top view for demonstrating the structure of the light-emitting device which concerns on a modification. It is sectional drawing of the light-emitting device shown in FIG.
  • FIG. 1 is a plan view showing a configuration of a light emitting device 10 according to the embodiment.
  • FIG. 2 is a view in which the partition 170, the second electrode 130, and the organic layer 120 are removed from FIG.
  • FIG. 3 is a diagram in which the insulating layer 150 is removed from FIG. 4 is a cross-sectional view taken along line AA in FIG. 1
  • FIG. 5 is a cross-sectional view taken along line BB in FIG. 1
  • FIG. 6 is a cross-sectional view taken along line CC in FIG. 1 to 3, the sealing layer 160 is indicated by a dotted line for the sake of explanation.
  • the light emitting device 10 includes a substrate 100, a plurality of light emitting units 140, an insulating layer 150, a first terminal 112 (terminal), and a first lead wiring 114 (wiring).
  • the light emitting unit 140, the insulating layer 150, the first terminal 112, and the first lead wiring 114 are formed on the substrate 100.
  • the light emitting unit 140 has an organic layer 120.
  • the insulating layer 150 defines a plurality of light emitting portions 140.
  • the first lead wiring 114 electrically connects the light emitting unit 140 and the first terminal 112. A portion of the first lead wiring 114 is covered with an insulating layer 150.
  • the thickness of the first portion 156 located between the plurality of light emitting units 140 in the insulating layer 150 is thinner than the thickness of the second portion 157 located on the first lead wiring 114 in the insulating layer 150. . Details will be described below.
  • the light emitting device 10 is a display device, and includes a substrate 100, a first electrode 110, a plurality of first terminals 112, a plurality of second terminals 132, a light emitting portion 140, an insulating layer 150, and a plurality of openings 152.
  • the light emitting device 10 may be a lighting device. In this case, the light emitting device 10 may have the first terminal 112, the first lead wiring 114, the second terminal 132, and the second lead wiring 134 one by one.
  • the substrate 100 is formed of a light transmissive material such as glass or a light transmissive resin.
  • the substrate 100 may be formed of a material that does not have translucency.
  • the substrate 100 is, for example, a polygon such as a rectangle.
  • the substrate 100 may have flexibility.
  • the thickness of the substrate 100 is, for example, not less than 10 ⁇ m and not more than 1000 ⁇ m.
  • the thickness of the substrate 100 is, for example, 200 ⁇ m or less.
  • the substrate 100 is a resin
  • the substrate 100 is formed using, for example, PEN (polyethylene naphthalate), PES (polyethersulfone), PET (polyethylene terephthalate), or polyimide.
  • an inorganic barrier film such as SiN x or SiON is formed on at least one surface (preferably both surfaces) of the substrate 100 in order to suppress moisture from permeating the substrate 100. .
  • the light emitting unit 140 has an organic EL element.
  • This organic EL element has a configuration in which a first electrode 110, an organic layer 120, and a second electrode 130 are laminated in this order.
  • the light emitting unit 140 is provided for each pixel of the display device.
  • the first electrode 110 is a transparent electrode having optical transparency.
  • the transparent conductive material constituting the transparent electrode is a metal-containing material, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), ZnO (Zinc Oxide), and the like. is there.
  • the thickness of the first electrode 110 is, for example, not less than 10 nm and not more than 500 nm.
  • the first electrode 110 is formed using, for example, a sputtering method or a vapor deposition method.
  • the first electrode 110 may be a carbon nanotube or a conductive organic material such as PEDOT / PSS.
  • the organic layer 120 has a light emitting layer.
  • the organic layer 120 has a configuration in which, for example, a hole injection layer, a light emitting layer, and an electron injection layer are stacked.
  • a hole transport layer may be formed between the hole injection layer and the light emitting layer.
  • an electron transport layer may be formed between the light emitting layer and the electron injection layer.
  • the organic layer 120 may be formed by a vapor deposition method.
  • at least one layer of the organic layer 120 for example, a layer in contact with the first electrode 110, may be formed by a coating method such as an inkjet method, a printing method, or a spray method. In this case, the remaining layers of the organic layer 120 are formed by vapor deposition.
  • all the layers of the organic layer 120 may be formed using the apply
  • the second electrode 130 is made of, for example, a metal selected from the first group consisting of Al, Au, Ag, Pt, Mg, Sn, Zn, and In, or an alloy of a metal selected from the first group. Contains a metal layer. In this case, the second electrode 130 has a light shielding property.
  • the thickness of the second electrode 130 is, for example, not less than 10 nm and not more than 500 nm. However, the second electrode 130 may be formed using the material exemplified as the material of the first electrode 110.
  • the second electrode 130 is formed using, for example, a sputtering method or a vapor deposition method.
  • the materials of the first electrode 110 and the second electrode 130 described above are for the case where the light emitting device 10 is a bottom emission type.
  • the material of the first electrode 110 and the material of the second electrode 130 are reversed. That is, the material of the second electrode 130 is used as the material of the first electrode 110, and the material of the first electrode 110 is used as the material of the second electrode 130.
  • the first electrode 110 extends in a line shape in the first direction (Y direction in FIG. 1).
  • the end portion of the first electrode 110 is connected to the first lead wiring 114.
  • the first lead wiring 114 has a conductive layer made of the same material as the first electrode 110. This conductive layer is integrated with the first electrode 110.
  • the end of the first lead-out wiring 114 is the first terminal 112. Further, since a plurality of first terminals 112 are provided, a plurality of first lead wires 114 are also provided.
  • a conductor layer 180 may be formed on the first lead-out wiring 114.
  • the conductor layer 180 is made of a material having a lower resistance than that of the first lead wiring 114, for example, a metal.
  • the conductor layer 180 may have a multilayer structure.
  • the conductor layer 180 includes, for example, a first conductive layer that is a metal layer such as Mo or Mo alloy, a second conductive layer that is a metal layer such as Al or Al alloy, and a metal layer such as Mo or Mo alloy.
  • the third conductive layer is stacked in this order.
  • the thickness of the second conductive layer is, for example, not less than 50 nm and not more than 1000 nm. Preferably it is 100 nm or less.
  • the first conductive layer and the third conductive layer are thinner than the second conductive layer, for example, 30 nm or less, preferably 25 nm or less. Note that the conductor layer 180 may or may not cover the first terminal 112.
  • the insulating layer 150 is formed on the plurality of first electrodes 110 and in a region between them.
  • a plurality of openings 152 and a plurality of openings 154 are formed in the insulating layer 150.
  • the plurality of second electrodes 130 extend in parallel to each other in a direction intersecting the first electrode 110 (for example, a direction orthogonal to the X direction in FIG. 1).
  • a partition wall 170 which will be described in detail later, extends between the plurality of second electrodes 130.
  • the opening 152 is located at the intersection of the first electrode 110 and the second electrode 130 in plan view. Specifically, the plurality of openings 152 are arranged in the direction in which the first electrode 110 extends (the Y direction in FIG. 1). The plurality of openings 152 are also arranged in the extending direction of the second electrode 130 (X direction in FIG. 1). For this reason, the plurality of openings 152 are arranged to form a matrix.
  • the opening 154 is located in a region overlapping with one end side of each of the plurality of second electrodes 130 in plan view.
  • the openings 154 are arranged along one side of the matrix formed by the openings 152. When viewed in a direction along this one side (for example, the Y direction in FIG. 1, ie, the direction along the first electrode 110), the openings 154 are arranged at a predetermined interval. A part of the second lead wiring 134 is exposed from the opening 154.
  • the second lead wiring 134 is connected to the second electrode 130 through the opening 154.
  • the second lead wiring 134 is a wiring for connecting the second electrode 130 to the second terminal 132 and has a conductive layer made of the same material as the first electrode 110. This conductive layer is separated from the first electrode 110. One end side of the second lead wire 134 is located below the opening 154, and the other end side of the second lead wire 134 is drawn to the outside of the insulating layer 150. In the example shown in the figure, the other end side of the second lead wiring 134 is a second terminal 132.
  • a conductor layer 180 may be formed on the second lead wiring 134. The conductor layer 180 may or may not cover the second terminal 132. In the example shown in this figure, a plurality of second terminals 132 are provided. For this reason, a plurality of second lead wires 134 are also provided.
  • the organic layer 120 is formed.
  • the hole injection layer of the organic layer 120 is in contact with the first electrode 110, and the electron injection layer of the organic layer 120 is in contact with the second electrode 130. For this reason, the light emitting part 140 is located in each of the regions overlapping with the opening 152.
  • the insulating layer 150 has the first portion 156 and the second portion 157.
  • the first portion 156 is a portion located between the plurality of light emitting units 140
  • the second portion 157 is a portion located on the first lead wire 114 and a portion located on the second lead wire 134. is there.
  • the film thickness of the first portion 156 is thinner than the film thickness of the second portion 157.
  • the thickness of the 1st part 156 should just be a thickness which can demarcate the light emission part 140.
  • the thickness of the second portion 157 needs to be thick enough to prevent the first lead-out wiring 114 from being short-circuited with other conductors. For this reason, the second portion 157 cannot be less than a certain thickness.
  • the film thickness of the first part 156 is 80% or less of the film thickness of the second part 157, more preferably 50% or less.
  • the film thickness of the 1st part 156 is 100 nm or more and 200 nm or less, for example, and the film thickness of the 2nd part 157 is 500 nm or more, for example, Preferably it is 650 nm or more.
  • (film thickness of the first electrode 110 + film thickness of the conductive layer 180)> film thickness of the second portion 157 is preferable.
  • a step 158 is formed at the boundary between the first portion 156 and the second portion 157.
  • the boundary portion between the first portion 156 and the step 158 may rise smoothly.
  • step difference 158 among the 2nd parts 157 may fall smoothly.
  • the surface constituting the step 158 may be inclined with respect to the substrate 100.
  • the step 158 is positioned so as to surround the plurality of light emitting units 140 (in other words, the openings 152). That is, the opening 152 is formed in the first portion 156 of the insulating layer 150.
  • each layer constituting the organic layer 120 is shown to protrude beyond the opening 152.
  • the organic layer 120 may be formed continuously between adjacent openings 152 in the direction in which the partition 170 extends, or may not be formed continuously. Good. However, as shown in FIG. 6, the organic layer 120 is not formed in the opening 154.
  • the second electrode 130 extends in a second direction (X direction in FIG. 1) intersecting the first direction.
  • a partition wall 170 is formed between the adjacent second electrodes 130.
  • the partition wall 170 extends in parallel to the second electrode 130, that is, in the second direction.
  • the partition wall 170 is formed on the first portion 156 of the insulating layer 150. However, the end portion of the partition wall 170 may be located on the second portion 157.
  • the partition 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed.
  • the partition wall 170 may be made of a resin other than a polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.
  • the partition wall 170 has a trapezoidal cross-sectional shape (reverse trapezoid). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. Therefore, if the partition wall 170 is formed before the second electrode 130, the second electrode 130 is formed on one surface side of the substrate 100 by using an evaporation method or a sputtering method. Can be formed collectively.
  • the partition wall 170 also has a function of dividing the organic layer 120.
  • a conductive member such as FPC (Flexible Printed Circuit) is connected to the first terminal 112 and the second terminal 132.
  • FPC Flexible Printed Circuit
  • the first terminal 112 and the second terminal 132 are arranged along the same side (first side) of the substrate 100. For this reason, when FPC is used as the conductive member, the first terminal 112 and the second terminal 132 can be connected to one FPC.
  • the light emitting device 10 further has a sealing layer 160.
  • the sealing layer 160 is provided to seal the light emitting unit 140.
  • the sealing layer 160 is formed on the surface of the substrate 100 where the light emitting unit 140 is formed, and covers the light emitting unit 140 and the insulating layer 150.
  • the sealing layer 160 is made of, for example, an insulating material, more specifically, an inorganic material.
  • the thickness of the sealing layer 160 is preferably 300 nm or less.
  • the thickness of the sealing layer 160 is, for example, 50 nm or more.
  • the sealing layer 160 is formed using an ALD (Atomic Layer Deposition) method. By using the ALD method, the step coverage of the sealing layer 160 is increased.
  • ALD Atomic Layer Deposition
  • the sealing layer 160 may be formed using other film forming methods such as a CVD method or a sputtering method.
  • the sealing layer 160 is formed of an insulating film such as SiO 2 or SiN, and the film thickness is, for example, not less than 10 nm and not more than 1000 nm.
  • the light emitting device 10 may have a sealing member instead of the sealing layer 160.
  • the sealing member may have a shape in which a concave portion is provided on an inorganic plate such as glass or stainless steel, or may have a shape in which a concave portion is formed by pressing an aluminum foil. Then, the sealing member is fixed to the substrate 100 so that the plurality of light emitting units 140 are positioned in the recesses.
  • the first electrode 110, the first terminal 112, the second terminal 132, and the first lead wires 114 and 134 are formed on the substrate 100.
  • a conductive film to be the conductor layer 180 is formed in a region including on the first lead wiring 114 and the second lead wiring 134.
  • the conductive film is formed into a predetermined pattern using, for example, a photolithography method. Thereby, the conductor layer 180 is formed.
  • a photosensitive insulating layer to be the insulating layer 150 is formed on the first electrode 110 by using, for example, a coating method.
  • the insulating layer is exposed and developed. Thereby, the insulating layer 150 is formed.
  • the opening 152 and the opening 154 are also formed.
  • the first portion 156, the second portion 157, and the step 158 are exposed by exposing a portion that becomes the first portion 156 of the above-described photosensitive insulating layer with a smaller amount of light than other exposed portions. Is also formed. In order to do this, a portion located above the first portion 156 in the photomask for exposing the photosensitive insulating layer described above may be made thinner than the other portions.
  • step difference 158 is not limited to an above-described method.
  • the first portion 156, the second portion 157, and the step 158 may be formed by repeating the formation, exposure, and development of the photosensitive insulating layer twice.
  • a partition wall 170 is formed on the insulating layer 150.
  • the partition wall 170 is formed, for example, by forming a photosensitive film to be the partition wall 170 by a coating method, and exposing and developing the photosensitive film.
  • the organic layer 120, the second electrode 130, and the sealing layer 160 are formed.
  • the insulating layer 150 defines the light emitting portion 140, when a component that degrades the organic layer 120 is released from the insulating layer 150, the component immediately reaches the organic layer 120 and degrades the organic layer 120.
  • the first portion 156 of the insulating layer 150 is thinner than the second portion 157. For this reason, the volume of the insulating layer 150 is small as compared with the case where the thickness of the first portion 156 is equal to the thickness of the second portion 157. Accordingly, the amount of chemical components released from the insulating layer 150 is reduced. As a result, the organic layer 120 is unlikely to deteriorate.
  • FIG. 7 is a plan view for explaining the configuration of the light emitting device 10 according to the modification, and corresponds to FIG. 2 in the embodiment.
  • FIG. 8 is a cross-sectional view of the light-emitting device 10 shown in FIG. 7 and corresponds to FIG. 5 in the embodiment.
  • the light emitting device 10 according to this modification has the same configuration as the light emitting device 10 according to the embodiment except for the following points.
  • the opening 152 of the insulating layer 150 extends in a direction parallel to the partition wall 170 (second direction: x direction in the figure). In other words, a plurality of light emitting portions 140 are formed in one opening 152 in a direction parallel to the partition wall 170. In other words, the insulating layer 150 is not formed between the two light emitting portions 140 adjacent in the direction parallel to the partition wall 170.
  • the organic layers 120 of the adjacent light emitting units 140 are connected to each other in the second direction. However, these organic layers 120 may be separated from each other.
  • the first portion 156 of the insulating layer 150 is thinner than the second portion 157, so that the amount of chemical components released from the insulating layer 150 is reduced. As a result, the organic layer 120 is unlikely to deteriorate. Furthermore, according to this modification, since the insulating layer 150 is not formed between the two light emitting units 140 adjacent in the direction parallel to the partition wall 170, the amount of chemical components released from the insulating layer 150 is further increased. Less. Therefore, the organic layer 120 is not easily deteriorated.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un dispositif électroluminescent dans lequel des sections électroluminescentes (140), une couche isolante (150), une première borne (112) et un premier câblage de sortie (114) sont formés sur un substrat (100). Les sections électroluminescentes (140) possèdent une couche organique. La couche isolante (150) délimite une pluralité de sections électroluminescentes (140). Le premier câblage de sortie (114) connecte électriquement les sections électroluminescentes (140) et la première borne (112). Une partie du premier câblage de sortie (114) est recouverte par la couche isolante (150). L'épaisseur du film d'une première partie (156) de la couche isolante (150) qui est positionnée entre la pluralité de sections électroluminescentes (140) est plus mince que l'épaisseur d'une deuxième partie (157) de la couche isolante (150) qui est positionnée au-dessus du premier câblage de sortie (114).
PCT/JP2015/054010 2015-02-13 2015-02-13 Dispositif électroluminescent et procédé de production d'un dispositif électroluminescent Ceased WO2016129114A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2015/054010 WO2016129114A1 (fr) 2015-02-13 2015-02-13 Dispositif électroluminescent et procédé de production d'un dispositif électroluminescent

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2015/054010 WO2016129114A1 (fr) 2015-02-13 2015-02-13 Dispositif électroluminescent et procédé de production d'un dispositif électroluminescent

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WO2016129114A1 true WO2016129114A1 (fr) 2016-08-18

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317382A (ja) * 2004-04-28 2005-11-10 Semiconductor Energy Lab Co Ltd 発光装置、電子機器およびテレビジョン装置
JP2007141821A (ja) * 2005-10-17 2007-06-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2013018136A1 (fr) * 2011-08-03 2013-02-07 パナソニック株式会社 Panneau d'affichage et procédé de production associé

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317382A (ja) * 2004-04-28 2005-11-10 Semiconductor Energy Lab Co Ltd 発光装置、電子機器およびテレビジョン装置
JP2007141821A (ja) * 2005-10-17 2007-06-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2013018136A1 (fr) * 2011-08-03 2013-02-07 パナソニック株式会社 Panneau d'affichage et procédé de production associé

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