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WO2015000276A1 - Dispositif del à film mince et son procédé de fabrication - Google Patents

Dispositif del à film mince et son procédé de fabrication Download PDF

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Publication number
WO2015000276A1
WO2015000276A1 PCT/CN2013/089719 CN2013089719W WO2015000276A1 WO 2015000276 A1 WO2015000276 A1 WO 2015000276A1 CN 2013089719 W CN2013089719 W CN 2013089719W WO 2015000276 A1 WO2015000276 A1 WO 2015000276A1
Authority
WO
WIPO (PCT)
Prior art keywords
type
sheet
led chip
led device
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/089719
Other languages
English (en)
Chinese (zh)
Inventor
汤勇
余彬海
李宗涛
丁鑫锐
陆龙生
袁伟
万珍平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China University of Technology SCUT
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Publication of WO2015000276A1 publication Critical patent/WO2015000276A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Definitions

  • the invention relates to a thin film type LED device and a manufacturing method thereof, in particular to a structure of an LED device and a preparation method thereof, which belong to the field of semiconductor device manufacturing.
  • LED light source has become a fourth-generation light source with its high luminous efficiency, energy saving, environmental protection, long life and short response time. It has gradually replaced traditional light sources and has shown great potential in the market. Especially for LED light sources, the amount of use in the field of lighting is very large. Driven by the emergence of emerging application markets, the LED market has grown rapidly in recent years. The demand for LEDs in the market has risen sharply, especially for small size, large light-emitting areas, and thin devices. In lighting products, many LED devices have to meet the requirements of light distribution due to the need for secondary lenses. The devices are faced with lens compression devices caused by assembly errors, resulting in device failures, etc., and backlights for LED devices, such as flat panel TV backlights.
  • the source saves about 48% of power compared with the traditional cold cathode ray tube, and its color reproduction range can reach 105% or even 120% of the National Television System Committee (NTSC) standard, which has great promotion and application value.
  • NTSC National Television System Committee
  • the ultra-thin LED TV has become the mainstream trend, so the demand for ultra-thin LED devices is very urgent.
  • the device whether it is a direct-lit backlight or a side-in backlight, the device also has a light-shielded panel. The possibility of the gold line.
  • power-type LED devices typically require expensive molds for one-shot molding of lenses, and the cost of product modification and upgrades is extremely high.
  • plastic packaging process requires extremely sophisticated and sophisticated equipment.
  • the number of integrated devices for a single LED package substrate is limited by the size of the mold and the size of the special fixture.
  • the manufacturing methods limited by molds, fixtures and equipment will increasingly deviate from actual needs.
  • new device structures and manufacturing methods are urgently needed.
  • the new ultra-thin device has become a trend.
  • the reliability of the gold-free package structure is higher, and it will become the development direction of LED devices in the future.
  • the invention is directed to the above technical defects and the development trend of the LED lighting market, and proposes a thin film type LED device and a manufacturing method thereof, the device is ultra-thin, the thickness range can be between 0.25-0.6 mm, and the gold-free wire flipping is adopted at the same time.
  • the structure is packaged with high reliability and high luminous angle.
  • the outer surface molding material adopts a self-proclaimed process. It does not need to use molds and complicated injection molding, and the hot pressing function equipment is simple and efficient in manufacturing method, and is very suitable for industrialization and backlighting.
  • the promotion of lighting and other fields has an extremely broad market space.
  • the present invention aims to solve the above technical problems at least to some extent.
  • a primary object of the present invention is to provide a thin film type LED device.
  • Another object of the present invention is to provide a method of fabricating a thin film type LED device.
  • a first aspect of the present invention provides a thin film type LED device, comprising a sheet type line bracket, a gold line-free flip-chip LED chip and a transparent protective film, the LED chip being positive
  • the negative electrode is bonded to the upper surface circuit layer of the sheet-type line support by eutectic soldering, and the lower surface circuit layer of the thin-type line support is connected to the positive and negative circuit of the LED chip by connecting the upper surface circuit layer through the line.
  • the light-transmissive protective film is tightly covered on the top and the periphery of the LED chip and on the upper surface wiring layer of the sheet-type line support.
  • the sheet type line support is a double-layer printed circuit board having a circuit layer, and the upper surface circuit layer and the lower surface circuit layer are respectively provided with an insulating groove for blocking the circuit layer from being a positive electrode and a negative electrode, wherein the upper surface line
  • the positive electrode of the layer is connected to the positive electrode of the LED chip
  • the negative electrode is connected to the negative electrode of the LED chip
  • the positive electrode and the positive electrode of the upper surface circuit layer and the lower surface circuit layer and the negative electrode and the negative electrode are connected to each other;
  • the surface of the upper surface wiring layer is etched or die-cut with a cross-shaped LED chip mounting mark.
  • the lower surface wiring layer is further provided with an auxiliary pad for enhancing fixation and heat conduction.
  • the thickness of the sheet-type line support is less than or equal to 0.2 mm, and the thickness of the upper surface circuit layer and the lower surface circuit layer is less than or equal to 0.1 mm.
  • the light transmissive protective film is a polymer organic film sheet having a thickness of 0.1 mm or less.
  • the light transmissive protective film is filled with scattering powder or yellow phosphor particles, and monochromatic light or mixed color light can be realized.
  • the thin film type LED device proposed by the invention is thinner, has a larger illumination angle, and has no gold wire in the conventional packaging process, and the device reliability is greatly increased.
  • the plastic lens mold is compared with the conventional packaging process. And the equipment is expensive, resulting in an increase in product cost.
  • the technical method proposed by the invention can greatly reduce the equipment input and reduce the product cost.
  • the thin film type LED device electrode of the invention is located at the bottom of the device and belongs to the surface mount type device structure. It is suitable for reflow soldering and automated test braiding process, and is more suitable for downstream automatic patch installation and assembly of LED industry chain.
  • a second aspect of the present invention provides a method of fabricating a thin film type LED device, comprising the steps of:
  • a flux on a center point of each of the bracket units of the sheet-type circuit substrate having the positioning holes at the edge, and the flux area is equivalent to the bottom electrode area of the LED chip;
  • the LED chip is placed on the thin-type circuit substrate with the flux; the LED chip is placed according to the LED chip placement mark;
  • the vacuum chamber is vacuum degassed by a vacuum pump, and when the vacuum pressure reaches 10-2 Pa or less, the upper mold frame is heated to 140-160 ° C and pressed down to realize the frame sealing and bonding of the transparent protective film and the sheet type circuit substrate. ;
  • the sheet-type circuit substrate with a transparent protective film is placed in an oven and baked at a temperature of 140-160 ° C for 2-3 hours;
  • the thin-film circuit substrate after curing is diced and divided along the dicing reference line to form a single thin film type LED device.
  • liquid adhesive is a homogenous material and the transparent protective film is cured at 140-160 ° C to achieve bonding and sealing of the transparent protective film and the sheet-type circuit substrate.
  • the upper mold is a rectangular frame having a heating rod, and the length and width of the inner and outer sides are the same as or slightly larger than the frame size of the sheet-type circuit substrate, and the upper mold pressing operation is controlled by the hydraulic cylinder.
  • the invention relates to a method for manufacturing a thin film type LED device which can be carried out by using conventional technical equipment.
  • the invention is innovative in that the device molding process is improved, and the LED device structure proposed by the invention is free of gold wires, and the LED chip is flipped.
  • the structure has strong anti-pressure and impact resistance, and the transparent protective film can be adhered to the surface of the LED chip by vacuum adsorption and hot pressing, thereby reducing the use of special plastic sealing molds and equipment.
  • the utility model can greatly reduce the manufacturing cost of the device and improve the production efficiency.
  • the structural device can replace the bracket type device of the traditional PPA and PLCC materials, and is suitable for various fields such as backlight, indoor and outdoor lighting, and has wide application space and considerable industrialization prospect.
  • the thin film type LED device proposed by the invention has the characteristics of ultra-thin, large light-emitting area and low thermal resistance, and the overall thickness of the device can be controlled at 0.25-0.6 mm, and the chip is heated due to the flip-chip structure and package form. The area is closer to the heat dissipation path and the thermal resistance is low, up to 4-6K/W.
  • Figure 1 is a cross-sectional view showing the structure of a thin film type LED device.
  • Figure 2 shows a top view of the structure of a thin film LED device.
  • Figure 3 is a top view of a substrate containing multiple thin film LED devices.
  • Figure 4 is a schematic diagram of the degassing step of the vacuum chamber.
  • Figure 5 is a schematic cross-sectional view of the lower pressure seal of the mold after the degassing is completed.
  • Figure 6 is a schematic cross-sectional view of the LED substrate after the vacuum chamber is taken out.
  • the figure shows: 1--sheet type line bracket; 11- upper surface circuit layer; 12- lower surface circuit layer; 13-LED Chip mounting mark; 14- auxiliary pad; 2- LED chip; 21- LED chip positive electrode; 22- LED chip negative electrode; 3- light transparent protective film; 4-sheet type circuit substrate; 41- Scratch reference line; 42- Locating pin hole; 5- Liquid adhesive; 6- Vacuum chamber; 7- Vacuum pump; 8-Mold; 81- Upper mold; 82- Lower mold; 83- Position the pin.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • This embodiment provides a thin film type LED device.
  • the present invention will now be described in detail with reference to FIGS. 1 and 2.
  • FIG. 1 is a cross-sectional view showing the structure of a thin film type LED device according to the present invention, as shown in the drawing,
  • a thin film type LED device comprises a sheet type line support 1, an LED chip 2 with no gold wire flip-chip structure and a transparent protective film 3, the LED chip 2 has a thickness of 0.1 mm, and the positive and negative electrodes of the LED chip 2 Bonded to the upper surface circuit layer 11 of the sheet-type line support 1 by eutectic soldering, the lower surface circuit layer 12 of the sheet-type line support 1 is connected to the positive and negative circuits of the LED chip 2 through the upper surface circuit layer
  • the light-transmitting protective film 3 closely covers the top and the periphery of the LED chip 2 and the upper surface wiring layer 11 of the sheet-type line holder 1.
  • the sheet-type line support 1 is a two-layer printed circuit board having a circuit layer, and the upper surface circuit layer 11 and the lower surface circuit layer 12 are each provided with an insulating groove for blocking the circuit layer from the positive electrode and the negative electrode, wherein
  • the positive electrode of the upper surface wiring layer 11 is connected to the positive electrode 21 of the LED chip
  • the negative electrode is connected to the negative electrode 22 of the LED chip
  • the positive electrode and the positive electrode of the upper surface wiring layer 11 and the lower surface wiring layer 12 are connected to each other, and the negative electrode and the negative electrode are connected to each other.
  • the surface of the upper surface wiring layer 11 is etched or die-cut with a cross-shaped LED chip mounting mark 13.
  • the lower surface wiring layer 12 is also provided with an auxiliary pad 14 for enhancing fixation and heat conduction.
  • the thickness of the sheet-type line support 1 is 0.15 mm, and the thickness of the upper surface wiring layer 11 and the lower surface wiring layer 12 are both 0.025 mm.
  • the light-transmitting protective film 3 is a polymer organic film sheet having a thickness of 0.1 mm.
  • the light transmissive protective film 3 is internally filled with scattering powder or yellow phosphor particles, and monochromatic light or mixed color light can be realized.
  • the LED device illumination area is located on top of the device.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • This embodiment provides a method for manufacturing a thin film type LED device.
  • the manufacturing method proposed by the present invention will be further described and illustrated in conjunction with FIGS. 3, 4 and 5.
  • a method of fabricating a thin film LED device comprising the steps of:
  • the LED chip 2 is placed on the thin-type circuit substrate 4 with the flux, and the LED chip 2 is positioned according to the LED chip mounting mark 13 when the LED chip 2 is placed;
  • the vacuum chamber 6 is vacuum degassed by the vacuum pump 7, and when the vacuum pressure reaches 10-2 Pa or less, the frame of the upper mold 81 is heated to 140 ° C and pressed down to realize the frame sealing of the transparent protective film 3 and the sheet type circuit substrate 4. And bonding;
  • the sheet-type circuit substrate 4 with a light-transmissive protective film is placed in an oven and baked at a temperature of 140 ° C for 3 hours;
  • the sheet-type circuit substrate 4 which has been cured after baking is diced and divided along the dicing reference line 41 to form a single film type LED device.
  • liquid adhesive 5 and the light-transmitting protective film are homogenous materials, and are cured at 140-160 ° C to bond and seal the light-transmitting protective film 3 and the sheet-type circuit substrate 4.
  • the upper mold 81 is a rectangular frame having a heating rod, and the length and width of the inner and outer sides thereof are the same as or slightly larger than the frame size of the sheet-type circuit substrate 4, and the pressing operation of the upper mold 81 is controlled by a hydraulic cylinder.
  • the positioning pin 42 is lower in height than the thickness of the sheet type wiring substrate 4.
  • Embodiment 3 is a diagrammatic representation of Embodiment 3
  • This embodiment provides a method for manufacturing a thin film type LED device.
  • the manufacturing method proposed by the present invention will be further described and illustrated in conjunction with FIG. 3, FIG. 4 and FIG.
  • a method of fabricating a thin film LED device comprising the steps of:
  • the LED chip 2 is placed on the thin-type circuit substrate 4 with the flux, and the LED chip 2 is positioned according to the LED chip mounting mark 13 when the LED chip 2 is placed;
  • the vacuum chamber 6 is vacuum degassed by the vacuum pump 7, and when the vacuum pressure reaches 10-2 Pa or less, the frame of the upper mold 81 is heated to 150 ° C and pressed down to realize the frame sealing of the transparent protective film 3 and the sheet type circuit substrate 4. And bonding;
  • the sheet-type circuit substrate 4 with a light-transmissive protective film is placed in an oven and baked at a temperature of 150 ° C for 2 hours;
  • the sheet-type circuit substrate 4 which has been cured after baking is diced and divided along the dicing reference line 41 to form a single film type LED device.
  • liquid adhesive 5 and the light-transmitting protective film are homogenous materials, and are cured at 140-160 ° C to bond and seal the light-transmitting protective film 3 and the sheet-type circuit substrate 4.
  • the upper mold 81 is a rectangular frame having a heating rod, and the length and width of the inner and outer sides thereof are the same as or slightly larger than the frame size of the sheet-type circuit substrate 4, and the pressing operation of the upper mold 81 is controlled by a hydraulic cylinder.
  • the positioning pin 42 is lower in height than the thickness of the sheet type wiring substrate 4.
  • Embodiment 4 is a diagrammatic representation of Embodiment 4:
  • This embodiment provides a method for manufacturing a thin film type LED device.
  • the manufacturing method proposed by the present invention will be further described and illustrated in conjunction with FIGS. 3, 4 and 5.
  • a method of fabricating a thin film LED device comprising the steps of:
  • the LED chip 2 is placed on the thin-type circuit substrate 4 with the flux, and the LED chip 2 is positioned according to the LED chip mounting mark 13 when the LED chip 2 is placed;
  • the vacuum chamber 6 is vacuum degassed by the vacuum pump 7, and when the vacuum pressure reaches 10-2 Pa or less, the frame of the upper mold 81 is heated to 160 ° C and pressed down to realize the frame sealing of the transparent protective film 3 and the sheet type circuit substrate 4. And bonding;
  • the sheet-type circuit substrate 4 with a light-transmissive protective film is placed in an oven and baked at a temperature of 160 ° C for 2 hours;
  • the sheet-type circuit substrate 4 which has been cured after baking is diced and divided along the dicing reference line 41 to form a single film type LED device.
  • liquid adhesive 5 and the light-transmitting protective film are homogenous materials, and are cured at 140-160 ° C to bond and seal the light-transmitting protective film 3 and the sheet-type circuit substrate 4.
  • the upper mold 81 is a rectangular frame having a heating rod, and the length and width of the inner and outer sides thereof are the same as or slightly larger than the frame size of the sheet-type circuit substrate 4, and the pressing operation of the upper mold 81 is controlled by a hydraulic cylinder.
  • the positioning pin 42 is lower in height than the thickness of the sheet type wiring substrate 4.

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Abstract

L'invention concerne un dispositif DEL à film mince et un procédé pour sa fabrication. Le dispositif DEL comprend une carte de circuit de type tranche (1), une puce à DEL de structure retournée (2) sans fils d'or et un film de protection contre la transmission de lumière (3). Des électrodes de puce (21, 22) de la puce à DEL (2) sont fixées sur la carte de type tranche par soudage eutectique. Une connexion électrique sans liaison à fil d'or est accomplie. Le film de protection contre la transmission de lumière (3) couvre une surface de la puce (2) et la carte de circuit (1). Des électrodes du dispositif à DEL sont positionnées au fond du dispositif pour mettre en œuvre facilement la technologie de montage en surface. L'épaisseur du dispositif à DEL est comprise entre 0,25 et 0,6 mm. Le dispositif à DEL présente les avantages d'avoir une épaisseur fine, une petite taille, un grand angle d'émission de lumière, un haut rendement de lumière, une haute fiabilité, un processus de fabrication simple, un bas coût et similaires, il convient à l'encapsulation de DEL à haute puissance et à puissance courante, et peut être largement utilisé dans les domaines de l'éclairage, de l'affichage et similaires.
PCT/CN2013/089719 2013-07-05 2013-12-17 Dispositif del à film mince et son procédé de fabrication Ceased WO2015000276A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310282378.0 2013-07-05
CN201310282378.0A CN103367605B (zh) 2013-07-05 2013-07-05 一种薄膜型led器件及其制造方法

Publications (1)

Publication Number Publication Date
WO2015000276A1 true WO2015000276A1 (fr) 2015-01-08

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Application Number Title Priority Date Filing Date
PCT/CN2013/089719 Ceased WO2015000276A1 (fr) 2013-07-05 2013-12-17 Dispositif del à film mince et son procédé de fabrication

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WO (1) WO2015000276A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367605B (zh) * 2013-07-05 2015-10-28 华南理工大学 一种薄膜型led器件及其制造方法
CN103700738A (zh) * 2013-12-29 2014-04-02 哈尔滨固泰电子有限责任公司 基于特殊基底的led封装方法及led装置
JP6327232B2 (ja) * 2015-10-30 2018-05-23 日亜化学工業株式会社 発光装置及び発光モジュールの製造方法
CN109991450B (zh) * 2019-04-25 2024-01-23 法特迪精密科技（苏州）有限公司 一种超高频模组测试夹具及其测试座的生产工艺

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CN101300687A (zh) * 2005-10-28 2008-11-05 飞利浦拉米尔德斯照明设备有限责任公司 在led上层压包含磷光体的密封剂膜
JP2011138831A (ja) * 2009-12-25 2011-07-14 Toyoda Gosei Co Ltd 発光装置の製造方法
CN102270730A (zh) * 2011-07-27 2011-12-07 晶科电子（广州）有限公司 一种无金线的led器件
CN102280562A (zh) * 2011-08-02 2011-12-14 日月光半导体制造股份有限公司 发光二极管的封装工艺与其结构
CN103165766A (zh) * 2011-12-09 2013-06-19 银河制版印刷有限公司 覆晶发光二极管的封装制造方法
CN103367605A (zh) * 2013-07-05 2013-10-23 华南理工大学 一种薄膜型led器件及其制造方法
CN203339218U (zh) * 2013-07-05 2013-12-11 华南理工大学 一种薄膜型led器件

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JP2013118210A (ja) * 2011-12-01 2013-06-13 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
KR101396589B1 (ko) * 2013-03-29 2014-05-20 서울반도체 주식회사 가요성을 구비한 발광 디바이스

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101300687A (zh) * 2005-10-28 2008-11-05 飞利浦拉米尔德斯照明设备有限责任公司 在led上层压包含磷光体的密封剂膜
JP2011138831A (ja) * 2009-12-25 2011-07-14 Toyoda Gosei Co Ltd 発光装置の製造方法
CN102270730A (zh) * 2011-07-27 2011-12-07 晶科电子（广州）有限公司 一种无金线的led器件
CN102280562A (zh) * 2011-08-02 2011-12-14 日月光半导体制造股份有限公司 发光二极管的封装工艺与其结构
CN103165766A (zh) * 2011-12-09 2013-06-19 银河制版印刷有限公司 覆晶发光二极管的封装制造方法
CN103367605A (zh) * 2013-07-05 2013-10-23 华南理工大学 一种薄膜型led器件及其制造方法
CN203339218U (zh) * 2013-07-05 2013-12-11 华南理工大学 一种薄膜型led器件

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CN103367605A (zh) 2013-10-23

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