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WO2016150069A1 - Procédé et structure d'encapsulation en boîtier-puce pour dispositif électroluminescent - Google Patents

Procédé et structure d'encapsulation en boîtier-puce pour dispositif électroluminescent Download PDF

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Publication number
WO2016150069A1
WO2016150069A1 PCT/CN2015/086438 CN2015086438W WO2016150069A1 WO 2016150069 A1 WO2016150069 A1 WO 2016150069A1 CN 2015086438 W CN2015086438 W CN 2015086438W WO 2016150069 A1 WO2016150069 A1 WO 2016150069A1
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WO
WIPO (PCT)
Prior art keywords
chip
light
encapsulant
emitting device
flip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/086438
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English (en)
Chinese (zh)
Inventor
王良臣
汪延明
曹振林
梁智勇
许亚兵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiangneng Hualei Optoelectrical Co Ltd
Original Assignee
Xiangneng Hualei Optoelectrical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiangneng Hualei Optoelectrical Co Ltd filed Critical Xiangneng Hualei Optoelectrical Co Ltd
Publication of WO2016150069A1 publication Critical patent/WO2016150069A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H10W72/20—

Definitions

  • the present invention relates to the field of semiconductor packaging, and in particular to a chip scale packaging method and package structure of a light emitting device.
  • the LED chips used in these packages are basically a formal structure, and the packaging process involves solid crystal bonding, wire bonding, and dispensing in the holder. It is then attached to the carrier of the luminaire as a carrier. From the perspective of heat dissipation, the thermal resistance of the system from the chip and the bracket to the lamp carrier is large, which affects the light efficiency and light decay of the LED.
  • the chip-level package of flip-chip LED chips is formed by flip-chip mounting on a small-sized submount after the LED chip is completed, and then covering the package or phosphor paste.
  • a flip-chip LED chip with a support substrate is cut and cut, that is, a so-called chip scale package (CSP), such as a flip chip LED chip disclosed in US Pat. No. 8,232,564 B2 to Cree.
  • CSP chip scale package
  • This packaging method requires an additional support substrate, which increases the manufacturing process and cost, and also increases the thermal resistance, which is not conducive to heat dissipation of the chip;
  • the support substrate also increases the volume of the packaged chip, which is disadvantageous for miniaturization of the product.
  • Another way is to apply encapsulation or fluorescent glue on the sapphire surface and four sides of the flip-chip LED chip, chip-level package without support substrate, obviously, its process, cost, thermal resistance, etc. are better than the former one. .
  • the present invention discloses a chip-level packaging method for a light emitting device, including:
  • the conversion base film Aligning at least one flip-chip light emitting device equidistantly on the conversion base film, the main light-emitting surface of the flip-chip light-emitting device facing away from the conversion base film, wherein the conversion base film is a conversion of a surface having a certain viscosity and a high temperature resistant material a base film for adhering the flip-chip light emitting device;
  • an encapsulant on the flip-chip light-emitting device and the conversion base film, respectively, the encapsulant being one of a photocurable adhesive, a thermosetting adhesive or a combination of a thermal curing and a photocuring;
  • the conversion base film is removed, and the chip-level package structure is obtained after the film is inverted.
  • the material of the dam is a plastic film or a light sensitive glue.
  • the encapsulant is further a silicone type encapsulant or a resin type encapsulant, wherein
  • the conversion base film has a viscosity of between 1 and 100 gf / 25 mm.
  • the conversion base film is a blue film, a white film or a UV film.
  • the conversion base film when the conversion base film is a UV film, the conversion base film has a viscosity of between 1 and 100 gf / 25 mm after being irradiated with ultraviolet light.
  • the main light-emitting surface of the flip-chip light-emitting device is covered with a dielectric film connecting the encapsulant and the main light-emitting surface.
  • the dielectric film has a transmittance of 70% or more and a thickness of 50 nm to 200 nm, and the dielectric film is composed of an oxide or a nitride.
  • the present invention also discloses a chip scale package structure fabricated by the chip scale packaging method of the light emitting device according to any of the above.
  • the chip-level packaging method and structure of the light-emitting device described in the present application achieve the following effects:
  • the invention adopts a plastic film as a conversion base film for supporting and arranging chips, directly encapsulating the chip, greatly simplifying the packaging process steps of the chip, and saving the material cost required for transferring the chip to other support substrates, and reducing the chip package. Cost is of great importance, in addition to solving the problem of adhesion between fluorescent glue or encapsulant and sapphire substrate;
  • the invention saves the chip supporting substrate or the bracket which is usually used in packaging, and only encapsulates the light emitting device, reduces the thermal resistance of the system, and improves the overload capability of the light emitting device;
  • the dam Since the dam is installed, the height of the encapsulant is limited. After cutting, the thickness of the encapsulant around the chip-scale package structure is uniform, so that the light emitted by the illuminating device and the phosphor-converted light are mixed in all directions. Uniform light ensures uniform color temperature.
  • the invention has great significance in greatly simplifying the packaging process steps of the chip, saving the supporting substrate of the chip, reducing the cost and more convenient for the user to improve the work efficiency.
  • FIG. 1 is a cross-sectional view of the flip-chip light emitting device array according to Embodiments 1 and 2 on a conversion base film;
  • FIGS. 2A and 2B are cross-sectional views showing the flip-chip light emitting device array coated with a transparent encapsulant and an encapsulant mixed with a luminescence conversion material, respectively;
  • FIG. 3 is a schematic view showing a cutting position of the flip-chip light emitting device array after applying the encapsulant according to the first embodiment
  • FIG. 4 is a cross-sectional view showing a chip scale package structure in which a dicing cut is performed and a conversion base film is removed;
  • FIG. 5 is a cross-sectional view showing a structure in which the chip scale package structure is flipped on a support substrate;
  • Figure 6 is a schematic view showing the formation of a dam around the chip according to the third embodiment of the present invention.
  • FIG. 7A and 7B are plan views of the chip and the dam shown in Fig. 6, respectively;
  • FIGS. 8A and 8B are cross-sectional views of a flip-chip light-emitting device array having a dam surrounding, coated with a transparent encapsulant and an encapsulant mixed with a luminescence conversion material;
  • FIG. 9 is a schematic view showing the formation of a dielectric film on a light-emitting device substrate as described in Embodiment 4;
  • FIG. 10 is a flow chart of a chip scale packaging method of the light emitting device according to the first embodiment.
  • first device if a first device is coupled to a second device, the first device can be directly electrically coupled to the second device, or electrically coupled indirectly through other devices or coupling means. Connected to the second device.
  • the description of the specification is intended to be illustrative of the preferred embodiments of the invention. The scope of protection of the application is subject to the definition of the appended claims.
  • the present specification does not limit the components and method steps disclosed in the claims to the components and method steps of the embodiments.
  • the dimensions, materials, shapes, structural order, adjacent sequence, and manufacturing method of the structural members described in the embodiments are merely illustrative examples, and the scope of the present invention is not limited thereto. .
  • the size and positional relationship of the structural components shown in the drawings are shown enlarged for the sake of clarity.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • a chip-level packaging method for a light-emitting device is provided for a package of a light-emitting device that does not need to be converted into white light, and includes the steps of:
  • Step 101 Arranging at least one flip-chip light emitting device equidistantly on the conversion base film, the main light-emitting surface of the flip-chip light-emitting device facing away from the conversion base film, wherein the surface of the conversion base film has a certain viscosity and is resistant
  • the high temperature is used to adhere the flip-chip light-emitting device;
  • the equidistance in the present invention means that the arrangement distances of the plurality of flip-chip light-emitting devices in the x-axis and y-axis directions are equal.
  • the conversion base film needs to be resistant to at least 150 ° C, depending on the nature of the conversion base film.
  • Step 102 forming a dam between and/or around the flip-chip light-emitting devices on the conversion base film; the advantage of providing the dam in step 102 is to control the thickness of the encapsulant, and when applying the encapsulant, according to Set the height of the dam to add the encapsulant and make the glue more uniform.
  • the flip-chip light emitting device of the present invention is a light emitting device at a certain wavelength band.
  • Step 103 coating a package adhesive on the flip-chip light-emitting device and the conversion base film, respectively, the package adhesive being a photo-curable encapsulant, a thermo-curing encapsulant or a photo-curing and heat-curing encapsulant;
  • Step 104 removing the dam when the encapsulant is cured to no fluidity
  • Step 105 After the encapsulant is cured, the encapsulant is subsequently cut;
  • Step 106 The conversion base film is removed, and a chip-scale structure is obtained after the film is poured.
  • the light-emitting device of the present invention comprises a semiconductor device having a light-emitting active region, such as a light-emitting diode (LED), on which the electrode or lead is not required to be drawn out from the main light-emitting surface.
  • the light-emitting wavelength of the semiconductor device is not limited to blue light, and may also include the entire visible light band, the ultraviolet and infrared wavelength bands, or a mixed light composed of light of the aforementioned wavelength band.
  • a chip-scale packaging method and a package structure of the present invention are illustrated by taking a light-emitting diode as an example.
  • the flip-chip LED chip (ie, flip-chip light emitting device) includes a substrate 10, a first semiconductor layer 11, an active region 12, and a second semiconductor layer 13, respectively, a second electrode 14 and a first electrode 15 and a second semiconductor layer 13 is electrically connected to the first semiconductor layer 11.
  • the first semiconductor layer 11 and the second semiconductor layer 13 have opposite conductivity types.
  • the first electrode 15 and the second electrode 14 may comprise a plurality of layers or a single layer comprising a conductive material layer having a high reflectance, such as a conductive layer composed of a high reflectivity metal such as Ag, Ru, Al, or the like, or a high transmission conductive
  • a conductive material layer having a high reflectance such as a conductive layer composed of a high reflectivity metal such as Ag, Ru, Al, or the like, or a high transmission conductive
  • the composite optical film composed of a film and a highly reflective multilayer dielectric film does not specifically limit the structure of the flip-chip light-emitting device according to the actual situation.
  • the conversion base film is a blue film, a white film or a UV film.
  • the conversion base film is a UV film
  • the conversion base film has a viscosity after irradiation with ultraviolet light of between 1 and 100 gf / 25 mm, preferably between 20 and 80 gf / 25 mm.
  • the encapsulant is further a silicone type encapsulant or a resin type encapsulant, wherein
  • the conversion base film has a viscosity of between 1 and 100 gf / 25 mm.
  • the material of the dam is a plastic film or a light sensitive glue.
  • the dam in this embodiment is a grid-like or square-shaped plastic film.
  • the height of the dam is equal to the height of the encapsulating glue after cutting, that is, the height of the dam is equal to the distance between the flip-chip illuminating devices minus the thickness of the dicing blade and then divided by 2, that is, the height of the dam is arranged after the flip-chip illuminating device is arranged Can be calculated.
  • a dielectric film connecting the encapsulant and the main light-emitting surface may be covered on the main light-emitting surface of the flip-chip light-emitting device for improving the adhesion of the encapsulant to the main light-emitting surface.
  • the transmittance of the film is 70% or more.
  • the dielectric film is further composed of an oxide or a nitride, and the dielectric film described herein is an oxide or nitride having better adhesion to the encapsulant.
  • the dielectric film is a dielectric film of silicon oxide, and the thickness is preferably between 50 nm and 200 nm.
  • the width of the knife can be seen from Figure 3.
  • the thickness of the encapsulant after cutting is approximately equal to the thickness of the four weeks after the separation. Since the flip-chip light-emitting device of the present invention is equidistantly arranged in the x-axis and y-axis directions, w is uniform in both the x-axis and y-axis directions. After cutting, the thickness of the encapsulant around the chip-scale package structure is uniform, so that the light emitted by the LED chip and the phosphor-converted light are uniformly mixed in all directions to ensure uniformity of color temperature.
  • the present invention also provides a chip scale package structure fabricated by the chip scale packaging method of any of the above light emitting devices
  • FIG. 4 is a cross-sectional view of the chip scale package structure obtained according to the above method, and the conversion base film 30 is taken from the LED chip. After the surface is separated, the surfaces of the first electrode 15 and the second electrode 14 are exposed.
  • 5 is a cross-sectional view showing the structure in which the chip scale package structure of FIG. 4 is flipped on a support substrate.
  • the chip scale package structure is mounted in a circuit board or bracket 70.
  • the first electrode 15 and the second electrode 14 of the chip scale package structure are soldered, bonded, or the like to the corresponding electrode pads 71 on the circuit board or the bracket 70. Fixed and electrically connected to 72.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • the LED chip of the flip-chip structure includes a substrate 10, a first semiconductor layer 11, an active region 12, and a second semiconductor layer 13, the second electrode 14 and the first electrode 15 and the second semiconductor layer 13 and the first semiconductor layer 11, respectively Electrical connection.
  • the first semiconductor layer 11 and the second semiconductor layer 13 have opposite conductivity types.
  • the first electrode 15 and the second electrode 14 may comprise a plurality of layers or a single layer comprising a conductive material layer having a high reflectance, such as a conductive layer composed of a high reflectivity metal such as Ag, Ru, Al, or the like, or a high transmission conductive A composite optical film composed of a film and a highly reflective multilayer dielectric film.
  • a plurality of flip-chip LED structure LED chips 1, 2, 3 are arranged at a certain interval 20 on the transition base film 30 which functions as a transition. Only three flip-chip LED chips are shown in FIG. Any one, for example, in order to increase the yield and reduce the cost, the LED chips 1, 2, 3 can fill the entire conversion base film 30.
  • the conversion base film 30 may be a surface viscous plastic film, that is, a blue film, a white film, or a UV film for performing chip dicing; the conversion base film 30 has the following characteristics: moderate viscosity, high temperature resistance, at 180 The film thickness is several tens of micrometers or more than 100 micrometers; the conversion base film 30 is easy to realize the filming of the chip, that is, the chip is easily flipped to another blue film or white with higher viscosity. On the film; after the conversion base film 30 is coated with a phosphor-containing encapsulant (referred to as a fluorescent glue) on its viscous side, the fluorescent glue can be cured.
  • the conversion base film 30 herein may also be a high-temperature ultraviolet film having a moderate viscosity after irradiation with ultraviolet light having the above characteristics, which is not specifically limited in the present invention.
  • an encapsulant 50 is applied to the conversion base film 30 and the LED chips 1, 2, 3, or an encapsulant 50 in which a conversion material 55 of a certain wavelength band is mixed is applied.
  • the encapsulant may be a high optical and physical property gel that is photocured or thermally cured, and may be of a silicone type or a resin type.
  • the viscosity of the conversion base film 30 is between 1 and 100 gf / 25 mm; if the conversion base film 30 is a UV film, the viscosity of the film after UV irradiation is between 1 and 100 gf / 25 mm.
  • the viscosity of the conversion base film 30 is also between 1 and 100 gf / 25 mm.
  • the curing properties of the silicone type encapsulant may be affected by the adhesion layer on the conversion base film 30, that is, it is difficult to cure after being "poisoned" by the adhesion layer. Therefore, the above requirements are imposed on the conversion base film 30.
  • the composition of the conversion base film and the amount of the viscous material in the present invention do not cause the encapsulant to fail to cure.
  • the invention adopts a plastic film as a conversion base film for supporting and arranging chips, directly encapsulating the chip, greatly simplifying the packaging process steps of the chip, and saving the material cost required for transferring the chip to other supporting substrates, thereby reducing the cost of the chip packaging. Significance.
  • the thickness D of the encapsulant 50 above the LED chips 1, 2, 3 is substantially equivalent to the thickness (about (wr)/2) of the periphery of the encapsulation 50, so that the light emitted by the LED chip 1-3 and the phosphor 55 are converted.
  • the rear light is uniformly mixed in all directions to ensure uniformity of color temperature
  • w is the pitch of the LED chips 1 to 3 along the x and y directions on the conversion base film 30
  • r is the thickness of the dicing blade.
  • the control of the color temperature is determined by the ratio of the gel to the phosphor and the thickness of the final encapsulant, and is not specifically limited herein.
  • the encapsulant 50 used has a suitable hardness after curing on the conversion base film 30, and has a hardness of not less than 70 shore. It is easy to cut by mechanical methods, does not collapse, and has the quality requirements of the current general-purpose LED encapsulant.
  • the encapsulant here has in particular solder heat resistance, and the applied film is not peeled off.
  • FIG. 4 is a chip-scale package structure that completes the cutting and separation after packaging.
  • the conversion base film 30 is separated from the surfaces of the LED chips 1, 2, 3, exposing the surfaces of the first electrode 15 and the second electrode 14.
  • the chip scale package structure is mounted in a circuit board or bracket 70, and the first electrode 15 and the second electrode 14 of the chip scale package structure are soldered, bonded, or the like to the circuit board or the bracket 70.
  • the corresponding electrode pads 71 and 72 are fixed and electrically connected.
  • Embodiment 3 is a diagrammatic representation of Embodiment 3
  • a dam is formed between and/or around the flip-chip light-emitting devices on the conversion base film.
  • a "dam" 80 is formed around the LED chips 1-3.
  • the dam 80 may be formed by filming or the like, and may be a large dam 80 (as shown in FIG. 7A) or a plurality of grids (as shown in FIG. 7B) distributed only around all chips or a part of the chips. Structure, but requires the dam 80 to be uniform in height.
  • the formulated encapsulant 50 is evenly coated in the dam and is guaranteed to be free of air bubbles.
  • the encapsulant 50 coated on and around the LED chips 1-3 is separated by the dam 80. Height of the dam 80 The thickness exceeds the thickness of the LED chip 1, so that when the LED chip 1 is packaged with the encapsulant 50, the thickness of the encapsulant over the LED chip 1 is equivalent to the thickness of the sidewall, as shown in FIG. 8A, so that the entire chip is along each of the light emitting surfaces.
  • the emitted light is mild and/or uniform in brightness.
  • the curing of the glue is combined with thermal curing and ultraviolet curing to ensure a certain hardness and toughness after curing, which is convenient for cutting.
  • a wavelength converting material 55 such as a phosphor may be mixed in the encapsulant 50.
  • the dam 80 is removed, and the curing conditions are adjusted twice according to the hardness and toughness of the package adhesive 50, and then the film is cut and cut to form a single chip scale package structure.
  • the dam 80 is used to prevent the encapsulating glue from intruding between the chip and the conversion base film, and contaminating the electrode layer on the surface of the chip.
  • Embodiment 4 is a diagrammatic representation of Embodiment 4:
  • a layer is further formed on the surface of the substrate 10.
  • a dielectric film 16 having a high transmittance for visible light is shown in FIG.
  • the dielectric film 16 is composed of silicon oxide or the like and has good adhesion to both the encapsulant 50 and the substrate 10.
  • the thickness of the dielectric film 16 is such that it has a transmittance of at least 70% or more for visible light, preferably 90% or more. Thickness in a few It is between several micrometers, preferably in the range of 50 nm to 200 nm.
  • the dielectric film 16 may be a single layer film or a multilayer film, and may be formed by vapor deposition, sputtering, or spin coating.
  • the chip-level packaging method and structure of the light-emitting device of the present invention achieve the following effects:
  • the invention adopts a plastic film as a conversion base film for supporting and arranging chips, directly encapsulating the chip, greatly simplifying the packaging process steps of the chip, and saving the material cost required for transferring the chip to other support substrates, and reducing the chip package. Cost is of great importance, in addition to solving the problem of adhesion between fluorescent glue or encapsulant and sapphire substrate;
  • the present invention eliminates the chip supporting substrate or the bracket which is usually used in packaging, and only encapsulates the light emitting device, thereby reducing the thermal resistance of the system;
  • the dam is installed, the height of the encapsulant is limited. After cutting, the thickness of the encapsulant around the chip-scale package structure is uniform, so that the light emitted by the LED chip and the phosphor-converted light are The light is evenly mixed in all directions to ensure uniformity of color temperature.

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Abstract

L'invention concerne un procédé d'encapsulation en boîtier-puce pour dispositif électroluminescent, comprenant les étapes consistant : à agencer un ou plusieurs dispositifs électroluminescents puce retournée (1, 2, 3) sur une membrane de base de conversion (30) à des distances égales, des surfaces électroluminescentes principales des dispositifs électroluminescents puce retournée (1, 2, 3) étant tournées à l'opposé de la membrane de base de conversion (30) ; à former des barrages circonvoisins (80) entre les dispositifs électroluminescents puce retournée (1, 2, 3) sur la membrane de base de conversion (3) et/ou au niveau des périphéries des dispositifs électroluminescents puce retournée (1, 2, 3) ; à appliquer séparément un revêtement d'un adhésif d'encapsulation (50) sur les dispositifs électroluminescents puce retournée (1, 2, 3) et la membrane de base de conversion (30) ; lorsque l'adhésif d'encapsulation (5) est solidifié jusqu'à ne présenter aucune fluidité, à retirer les barrages circonvoisins (80) ; après que l'adhésif d'encapsulation (50) a été complètement solidifié, à couper l'adhésif d'encapsulation (50) ; et à retirer la membrane de base de conversion (30), et à obtenir une structure d'encapsulation en boîtier-puce après coulée de membrane. L'invention concerne également une structure d'encapsulation en boîtier-puce pour dispositif électroluminescent. Des conséquences importantes obtenues dans des aspects de l'invention sont de simplifier les étapes de la technologie d'encapsulation de puces, d'économiser des embases des puces, de réduire le coût, d'être plus commodes pour un utilisateur pour augmenter l'efficacité du travail, et autres.
PCT/CN2015/086438 2015-03-24 2015-08-09 Procédé et structure d'encapsulation en boîtier-puce pour dispositif électroluminescent Ceased WO2016150069A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510130969.5A CN104851961B (zh) 2015-03-24 2015-03-24 发光器件的芯片级封装方法及结构
CN201510130969.5 2015-03-24

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