WO2014162802A1 - Optical device - Google Patents

Abstract

In the present invention, a conductor on a substrate and an electrical component are directly electrically connected when the conductor is covered by a covering body (a protective film), thus making it possible to reduce contact resistance between the electrical component and a terminal. The present invention relates to an optical device that is provided with: an optical element; a terminal section that is electrically connected to the optical element; and an electrical component (40) that is joined with the terminal section. The terminal section comprises a conductor (20) and a conductive protective film (210) that is formed on the conductor (20). The electrical component (40) and the conductor (20) are joined via an opening (212) in the protective film (210).

Description

Optical device

The present invention relates to an optical device that controls display and light emission by driving an optical element such as an organic EL element or a liquid crystal element.

One of the optical elements of lighting devices and displays is an organic EL (organic electroluminescence) element and a liquid crystal element. Since the optical element is vulnerable to moisture, it needs to be sealed. As a sealing structure of an organic EL element, there is one using a protective film as described in Patent Document 1, for example. In Patent Document 1, alumina formed by an atomic layer growth method is used as a protective film. Moreover, there exists a structure of patent document 2 as an idea which improves the connection reliability of a mounting part. Patent Document 2 describes that an opening is formed in an insulating film on a connection terminal portion, and an anisotropic conductive film is formed in the opening.

Japanese Patent Laid-Open No. 2003-347042 JP 2001-071154 A

In order to operate the optical device, it is necessary to join an electrical component to the optical element through a connecting portion having a conductor. However, when this conductor is covered with a protective film, the protective film is formed of an insulating material or a material with high contact resistance, so that the optical device has a fine structure (for example, high definition) or the life of the optical device. It becomes difficult to lengthen.

Also, when an organic EL element is used as an optical element, the terminal structure of the mounting part often adopts a structure in which a protective film such as molybdenum or nickel that protects this conductor is superimposed on an aluminum or chromium conductor. Also in this case, it is difficult to electrically connect the conductor and the electrical component. In particular, the organic EL element is driven by current unlike the liquid crystal element, so that it is required to reduce the wiring structure and the contact resistance between the electrical component and the terminal that have a lower resistance.

As a problem to be solved by the present invention, when the conductor on the substrate is covered with a covering (protective film), the conductor and the electrical component are directly electrically connected, and the contact resistance between the electrical component and the terminal As an example, it can be reduced.

The invention according to claim 1 is an optical element;
A terminal portion electrically connected to the optical element;
An electrical component joined to the terminal portion;
With
The terminal portion is
A conductor and a conductive protective film formed on the conductor;
Have
In the optical device, the electrical component and the conductor are bonded to each other through the opening of the protective film.

The invention according to claim 5 comprises a substrate having a conductor and a covering of the conductor, an electrical component, and an anisotropic conductive film connected to the conductor and the electrical component,
In the optical device, the anisotropic conductive film is provided in an opening of the covering.

The above-described object and other objects, features, and advantages will be further clarified by a preferred embodiment described below and the following drawings attached thereto.

(A) is sectional drawing which shows the connection structure of the electrical component which concerns on embodiment, (b) is the figure which expanded the circumference | surroundings of opening among (a). It is a top view of a board | substrate. It is a figure which shows the formation method of the structure of the terminal part of the electrical component shown in FIG.1 and FIG.2. 3 is a plan view for explaining the structure of a terminal portion of the electrical component according to Embodiment 1. FIG. It is a figure which shows the planar shape of opening. FIG. 6 is a plan view illustrating a configuration of an optical device included in an electrical apparatus according to a second embodiment. FIG. 7 is a cross-sectional view taken along the line AA in FIG. 6. FIG. 7 is a sectional view taken along the line CC of FIG. FIG. 7 is a sectional view taken along line BB in FIG. 6 is a plan view of an optical device according to Embodiment 2. FIG. It is DD sectional drawing of FIG. It is EE sectional drawing of FIG.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

FIG. 1A is a cross-sectional view showing a connection structure of an electrical component 40 according to the embodiment. The electrical component 40 and the substrate 100 constitute at least a part of the optical device. At least the first surface of the substrate 100 is formed of an insulator. On this one surface, there is a terminal portion that is electrically connected to the electrode of the optical element. The terminal portion is formed by the conductor 20 and a protective film 210 (covering body) that covers the conductor 20. In the example shown in this figure, the protective film 210 prevents the conductor from being corroded by moisture or oxygen, or damaged by an external force. For example, the protective film 210 has a contact resistance with an electric component rather than an insulating material or the conductor 20. Made of high material. In the latter case, the protective film 210 may be formed of a metal material. An opening 212 is formed in the protective film 210. The opening 212 is located on a part (for example, one end) of the conductor 20 in a plan view. The conductor 20 is connected to a terminal of the electrical component 40 via an anisotropic conductive film 30 and a bonding wire (not shown). The anisotropic conductive film 30 partially overlaps the opening 212 and has a plurality of conductive particles 32 (described later using FIG. 1B). At least the surface of the conductive particles 32 has conductivity. The conductive particles 32 may be formed of a conductive material (for example, metal), or the core surface made of an insulating material is covered with a film (for example, a metal film) formed of a conductive material. There may be.

A protective film 210 is formed on a portion of the lead-out wiring 130 that becomes a terminal portion. For example, the protective film 210 has at least a layer made of an oxide, such as an aluminum oxide film. The protective film 210 may have a single layer structure or a structure in which a plurality of metal oxide films are stacked. In this case, the protective film 210 serves as a sealing film that covers the entire optical device, and covers the conductor 20 of the terminal portion.

However, the terminal portion may have a structure in which the aluminum or chromium conductor 20 is covered with a protective film 210 such as molybdenum or nickel. As a preferable example in this case, an aluminum alloy layer having a specific ratio of Nd (neodymium) is used as the conductor 20, and a Mo alloy layer containing a specific ratio of Nb (niobium) is used as the protective film 210. In this case, the sealing film that covers the entire optical device may not be formed on the terminal portion.

FIG. 1 (b) is an enlarged view of the periphery of the opening 212 in FIG. 1 (a). As described above, the anisotropic conductive film 30 has the conductive particles 32. When viewed in the width direction of the opening 212, at least a part of at least one conductive particle 32 is located in the opening 212. In plan view, part of the conductive particles 32 protrudes from the opening 212. In other words, the width of the opening 212 is smaller than the size of the outer shape of the conductive particles 32 (for example, the equivalent circle diameter in the cross section). Further, the height of the conductive particles 32 in contact with the conductor 20 is larger than the thickness of the protective film 210. The conductive particle is a sphere in the illustrated case, but is not limited to this, and may have a shape other than the sphere, such as a quadrangle.

FIG. 2 is a plan view of the substrate 100. FIG. 1A described above corresponds to the AA cross section of FIG. The conductor 20 extends in a specific direction. The opening 212 extends in a direction intersecting with the extending direction of the conductor 20. That is, the opening 212 crosses the conductor 20 in plan view. Further, the opening 212 may be formed from the inner side to the outer side of the conductor 20 in plan view. The opening 212 has, for example, a shape along a part of an arc.

Note that all of the openings 212 are preferably covered with the anisotropic conductive film 30. However, the end of the opening 212 may be exposed from the anisotropic conductive film 30.

FIG. 3 is a diagram showing a method for forming the structure of the terminal portion of the electrical component 40 shown in FIGS. 1 and 2. The structure of this terminal portion is formed as follows. First, the board | substrate 100 in which the conductor 20 and the protective film 210 were formed, and the electrical component 40 are prepared. In this state, the opening 212 is not formed in the protective film 210.

Next, the anisotropic conductive film 30 is sandwiched between the substrate 100 and the electrical component 40. For example, after the anisotropic conductive film 30 is disposed on the substrate 100, the electrical component 40 may be disposed on the anisotropic conductive film 30, or the surface of the electrical component 40 facing the substrate 100 side (ie, connection) The electrical component 40 may be disposed on the substrate 100 with the anisotropic conductive film 30 attached to the surface having the terminals.

Next, the electric component 40 is moved in the plane direction by moving the holding jig in the plane direction while pressing the electric component 40 against the substrate 100 using the holding jig. As a result, the conductive particles 32 move while being pressed against the protective film 210, and as a result, an opening 212 is formed in the protective film 210. In plan view, the opening 212 is formed in a state of crossing the conductor 20 or in a state of straddling the conductor 20 from the inside to the outside. The conductor 20 and the electrical component 40 are electrically connected through the conductive particles 32 having the openings 212 formed therein. In the example shown in this figure, since the holding jig rotates (spins) the electric component 40, the opening 212 becomes a part of an arc.

As described above, according to the present embodiment, the conductor 20 is covered with the protective film 210. The conductor 20 is connected to the electrical component 40 through the anisotropic conductive film 30 in the opening 212 provided in the protective film 210. Therefore, even if the conductor 20 is covered with the protective film 210, the conductor 20 can be connected to the electrical component 40.

Further, the opening 212 of the protective film 210 is formed using the conductive particles 32 included in the anisotropic conductive film 30. As a result, the opening 212 is formed in a state crossing the conductor 20 or in a state straddling from the inside to the outside of the conductor 20. The conductor 20 is connected to the electrical component 40 through the conductive particles 32 in which the openings 212 are formed. Therefore, the opening 212 of the protective film 210 can be easily formed on the conductor 20, and the conductor 20 can be easily connected to the electrical component 40 through the opening 212.

When the conductor 20 is connected to a moisture-sensitive element such as an organic EL element, if the opening 212 is provided in the protective film 210, moisture may be transmitted to the element through the conductor 20. On the other hand, in this embodiment, the anisotropic conductive film 30 covers the opening 212. For this reason, even if the opening 212 is provided in the protective film 210, it can suppress that the protective capability by the protective film 210 falls.

In the above-described embodiment, when the conductor 20 is formed of aluminum, the protective film 210 may be an oxide film (for example, a natural oxide film) such as aluminum oxide formed on the surface layer of the conductor 20. In this case, the opening 212 is formed in the oxide film as the protective film 210.

(Example 1)
FIG. 4 is a plan view for explaining the structure of the terminal portion of the electrical component 40 according to the first embodiment. In the present embodiment, the electrical component 40 has a plurality of terminals. The substrate 100 also has a plurality of conductors 20. The plurality of terminals included in the electrical component 40 are electrically connected to different conductors 20, respectively.

In this drawing, the conductors 20 arranged along the edge of the substrate 100 are terminal portions. The protective film openings 212 are also arranged along the edge of the substrate 100. Examples of the shape of the opening 212 include a shape smaller than the conductor 20 and a shape longer than the conductor 20. Further, the opening 212 may be formed in a region where the terminal portion of the conductor 20 is formed, or may be formed so as to protrude from the terminal portion. In the case where the opening 212 has a longitudinal direction, the longitudinal direction of the opening 212 may extend in a direction along the conductor 20 or may extend in a direction intersecting with the conductor 20.

FIG. 5 is a diagram showing another example of the planar shape of the opening 212 of the protective film. As described above, the openings 212 are arranged along the edge (one side) of the substrate 100. The two openings 212 located at both ends of the array have different arc directions. Specifically, the two arcs drawn by each of the two openings 212 are both directed toward a predetermined position of the substrate 100 (for example, the center of the substrate). As described in the embodiment, the opening 212 is formed by rotating the electric component 40 while pressing the conductive particles 32 of the anisotropic conductive film 30 against the protective film 210 using the electric component 40. It is because it is doing. In the illustrated example, the opening 212 is a circular arc, but may be linear as shown in FIG.

Also in this example, for the same reason as in the embodiment, the opening 212 of the protective film 210 on the conductor 20 can be easily formed, and the conductor 20 located in the opening 212 and the electrical component 40 can be easily joined. it can. Further, even if the substrate 100 has a plurality of conductors 20, the openings 212 can be simultaneously formed on the plurality of conductors 20. Therefore, the cost for mounting the electrical component 40 on the substrate 100 can be reduced.

(Example 2)
FIG. 6 is a plan view illustrating the configuration of the optical device 10 included in the electrical apparatus according to the second embodiment. 7 is a cross-sectional view taken along line AA in FIG. 6, FIG. 8 is a cross-sectional view taken along line CC in FIG. 6, and FIG. 9 is a cross-sectional view taken along line BB in FIG. The electrical apparatus according to the present embodiment includes the optical device 10 and the electrical component 40. The electrical component 40 is a control IC for the optical device 10 and is mounted on the substrate 100 of the optical device 10 using the anisotropic conductive film 30.

The optical device 10 is, for example, a display or a lighting device. When the optical element of the optical device 10 is an organic EL element, the optical device 10 includes a first electrode 110, an organic layer 140, and a second electrode 150. In the following description, the case where the optical device 10 is a display is illustrated. It is not limited to this, A lighting device may be used.

The optical device 10 includes a substrate 100, a first electrode 110 (lower electrode), an organic EL element, an insulating layer 120, a plurality of lead wires 130 connected to the first electrode 110, an organic layer 140, and a second electrode 150 (upper electrode). The plurality of lead wires 160 connected to the second electrode 150 and the plurality of partition walls 170 are provided. The insulating layer 120 and the partition 170 are an example of a structure formed over a substrate. The organic EL element is composed of a laminate in which the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150. This organic EL element is located between the plurality of partition walls 170. That is, the organic EL element and the lead wiring 160 are located on the first surface side of the substrate 100. And the light emission area | region is comprised by the organic EL element.

The substrate 100 is formed of, for example, glass or a resin material, but may be formed of other materials. The substrate 100 may have flexibility.

The first electrode 110 is formed on the first surface side of the substrate 100, and extends in a line shape in the first direction (Y direction in FIG. 3) as shown in FIG. The first electrode 110 is a transparent electrode made of an inorganic material such as ITO (Indium Thin Oxide) or IZO (indium zinc oxide), or a conductive polymer such as a polythiophene derivative.

The lead-out wiring 130 is connected to the first electrode 110 and is connected to the terminal portion located on the edge of the substrate 100. This terminal portion is electrically connected to an external device including an electrical component such as a drive IC. In the example shown in the figure, the end portion of the lead-out wiring 130 is a terminal portion. The lead wire 130 is a metal wire made of a metal material or an alloy such as ITO, IZO, Al, Cr, or Ag, which is an oxidized conductive material, but is a wire formed of a conductive material other than metal. There may be. The lead wiring 130 has a laminated structure in which a plurality of layers are stacked. Specifically, the lead wiring 130 includes a transparent conductive layer 132 and a conductive layer 134. The conductive layer 134 includes a conductive layer and a protective layer. The lead wire 130 is made of ITO (transparent conductive layer 132) of the same material as the first electrode 110, a Mo alloy layer containing a specific proportion of Nb (niobium), and an aluminum alloy layer (Nd (neodymium) containing a specific proportion). A conductive layer) and a Mo alloy layer (protective layer) containing a specific proportion of Nb (niobium) are preferred. The reason for this is as follows.

First, when aluminum and ITO are brought into direct contact, the chemical resistance of ITO is weakened by the electrochemical effect. Moreover, the electrical contact between aluminum and ITO is poor, and the contact resistance between them deteriorates with time. In order to avoid these problems, it is preferable to dissociate direct contact by dissimilar metals such as molybdenum (Mo) and chromium (Cr) between aluminum and ITO. In particular, Mo blocks the reaction between aluminum and ITO and has low contact resistance with both.

Furthermore, many AlNd alloys containing aluminum or neodymium (Nd) in aluminum are easily oxidized. When the material forming the lead wiring is oxidized, there is a risk that oxygen in the oxide diffuses into aluminum or an AlNd alloy. In order to suppress this phenomenon, a MoNb alloy layer containing a specific proportion of niobium (Nb) is formed as a protective film on the surface of the lead-out wiring. For this reason, as a lead-out wiring, 4 layer structure of ITO, Mo alloy layer, Al alloy layer, and Mo alloy layer is preferable. Further, the terminal portion may have the same structure as the lead wiring.

The insulating layer 120 is formed on and between the plurality of first electrodes 110 as shown in FIGS. The insulating layer 120 is a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed. As the insulating layer 120, for example, a positive photosensitive resin is used. The insulating layer 120 may be a resin other than a polyimide resin, for example, an epoxy resin or an acrylic resin.

The second electrode 150 is connected to the lead wiring 160 at the contact portion 124. The lead wiring 160 connects the second electrode 150 to the terminal portion, and has the same structure as the lead wiring 130. In the example shown in the drawing, the lead-out wiring 160 has a configuration in which a conductive layer 164 is stacked on a transparent conductive layer 162. The transparent conductive layer 162 has a configuration similar to that of the transparent conductive layer 132, and the conductive layer 164 has a configuration similar to that of the conductive layer 134. Further, the end portion of the lead wiring 160 is a terminal portion. The contact part 124 is located at one end of each of the plurality of second electrodes 150 in plan view. Further, the contact portion 124 is disposed along one side of the matrix formed by the light emitting region 122. When viewed in a direction along this one side (for example, the Y direction in FIG. 6), the contact portions 124 are arranged at predetermined intervals in the direction along the first electrode 110.

The light emitting region 122 is defined by the insulating film 120. An organic layer 140 is formed in the light emitting region 122. The organic layer 140 is formed by stacking, for example, a hole transport layer, a light emitting layer, and an electron transport layer. In the following description, a part of the organic layer refers to, for example, a hole transport layer, a light emitting layer, an electron transport layer, a hole injection layer described later, or an electron injection layer. The hole transport layer is in contact with the first electrode 110, and the electron transport layer is in contact with the second electrode 150. In this way, the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150.

A hole injection layer may be formed between the first electrode 110 and the hole transport layer, or an electron injection layer may be formed between the second electrode 150 and the electron transport layer. . Also, not all of the above layers are necessary. For example, when recombination of holes and electrons occurs in the electron transport layer, the light-emitting layer is unnecessary because the electron transport layer also functions as the light-emitting layer. In addition, at least one of the first electrode 110, the hole injection layer, the hole transport layer, the electron transport layer, the electron injection layer, and the second electrode 150 is formed using a coating method such as an inkjet method. May be. Further, an electron injection layer made of an inorganic material such as LiF may be provided between the organic layer 140 and the second electrode 150.

7 and 8 show a case where each layer constituting the organic layer 140 protrudes outside the light emitting region 122. And as shown in FIG. 8, each layer which comprises the organic layer 140 may be continuously formed between the adjacent light emission area | regions 122 in the direction where the partition 170 is extended, and is formed continuously. You don't have to.

As described above, the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150. As shown in FIGS. 6 to 9, the second electrode 150 is formed above the organic layer 140 and extends in the second direction (X direction in FIG. 6) intersecting the first direction. The second electrode 150 is electrically connected to the organic layer 140. For example, the second electrode 150 may be formed on the organic layer 140 or may be formed on a conductive layer formed on the organic layer 140. The second electrode 150 is, for example, a metal layer formed of a metal material such as Ag or Al, or a layer formed of an oxidized conductive material such as IZO. The optical device 10 includes a plurality of second electrodes 150 that are parallel to each other. One second electrode 150 is formed in a direction passing over the plurality of light emitting regions 122. The second electrode 150 is connected to the lead wiring 160. In the illustrated example, the end of the second electrode 150 is positioned on the contact portion 124, so that the second electrode 150 and the lead-out wiring 160 are connected at the contact portion 124. The lead wiring 160 is connected to the second electrode 150 and is connected to the terminal portion at the end of the substrate 100. This terminal portion is electrically connected to an external device including an electrical component such as a drive IC. In this example, the lead wire 130 connected to the first electrode 110 and the lead wire 160 connected to the second electrode 150 are drawn to the edge of the substrate 100. And the part located in the edge of the board | substrate 100 among the extraction wirings 130 and 160 becomes a terminal part. In this way, terminal portions that are electrically connected to the electrodes of the optical element (the first electrode 110 and the second electrode 150) are formed. The lead wires 130 and 160 and the terminal portion may be formed separately.

In the example of FIG. 6, the lead wiring 160 is formed in a region where the first electrode 110 and the lead wiring 130 are not formed on the first surface side of the substrate 100. The lead wiring 160 may be formed simultaneously with the lead wiring 130, for example.

A part of one end side (light emitting part side) of the lead wiring 160 is covered with the insulating layer 120 and exposed from the insulating layer 120 at the contact part 124. In the contact portion 124, the second electrode 150 is bonded to the lead wiring 160. A part of the other end side (outer peripheral side of the substrate) of the lead wiring 160 is drawn to the outside of the insulating layer 120. That is, the other end side of the lead wiring 160 is exposed from the insulating layer 120.

A partition wall 170 is formed between the adjacent second electrodes 150. The partition wall 170 extends in parallel with the second electrode 150, that is, in the second direction. The base of the partition wall 170 is, for example, the insulating layer 120. The partition 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed. The partition wall 170 is formed using, for example, a negative photosensitive resin. The partition wall 170 may be made of a resin other than a polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.

The partition wall 170 has a trapezoidal cross-sectional shape (reverse trapezoid). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. For this reason, by forming the partition wall 170 before the second electrode 150, a plurality of second electrodes 150 can be formed on the first surface side of the substrate by vapor deposition or sputtering. The two electrodes 150 can be formed at a time. Since the second electrode 150 formed on one surface is divided by the partition wall 170, the plurality of second electrodes 150 are provided on the organic layer 140. The position where the second electrode 150 is divided includes, for example, the insulating layer 120 which is the base of the partition 170, the side surface of the partition 170, or the like. Then, by changing the extending direction of the partition wall 170, the second electrode 150 can be patterned into a free shape such as a stripe shape, a dot shape, an icon shape, or a curve. A second conductor 150 is formed on the partition wall 170.

Further, when the organic layer 140 is formed of a coating material, the organic layer 140 is formed by applying the coating material to the plurality of light emitting regions 122. When the coating material is applied to the plurality of light emitting regions 122, the partition 170 is connected to the light emitting region 122 on both sides of the partition 170, and the partition 170 is connected to the other side from the light emitting region 122 on one side of the partition 170. The organic layer 140 may have a function of preventing the organic layer 140 from being continuously formed over the light emitting region 122 on the side. In this case, the partition wall 170 is formed before the organic layer 140.

A protective film 210 is formed above the second electrode 150. In this embodiment, the protective film 210 is a sealing film. The protective film 210 is an aluminum oxide film, for example, and is formed using, for example, an ALD (Atomic Layer Deposition) method. In the example shown in this figure, the protective film 210 is formed on the second electrode 150, but another film may exist between the second electrode 150 and the protective film 210. The thickness of the protective film 210 is, for example, 10 nm to 200 nm, preferably 50 nm to 100 nm. A film formed by the ALD method has high step coverage. Here, the step coverage means the uniformity of the film thickness in a portion where there is a step. High step coverage means high film thickness uniformity even in a stepped portion, and low step coverage means low film thickness uniformity in a stepped portion. As shown in FIG. 6, the protective film 210 covers the insulating layer 120, the lead wiring 160, and the lead wiring 130. The protective film 210 may be formed using a film formation method other than the ALD method, for example, a CVD method. When formed by the CVD method, the protective film 210 is formed of an inorganic insulating film such as a silicon oxide film, and the film thickness thereof is, for example, not less than 0.1 μm and not more than 10 μm. By providing the protective film 210, the light-emitting element 102 is protected from moisture and the like. The protective film 210 may be formed by a sputtering method. In this case, the protective film 210 is formed of an insulating film such as SiO ₂ or SiN. In that case, the film thickness is 10 nm or more and 1000 nm or less.

The protective film 210 covers an organic EL element that is an optical element. In particular, when the ALD method is used, the protective film 210 covers all structures on the entire surface of the substrate 100. Thereafter, by removing a portion of the protective film 210 located above the terminal portion, the terminal portion is exposed from the protective film 210, and the electrical component and the conductor of the terminal portion are joined.

Next, a method for manufacturing the optical device 10 will be described. First, the first electrode 110 is formed on the substrate 100.

Next, lead wires 130 and 160 are formed on the substrate 100. The lead wires 130 and 160 are formed by patterning using etching (for example, dry etching or wet etching).

Next, an insulating layer is formed on the substrate 100, the first electrode 110, and the lead wires 130 and 160, and this insulating layer is selectively removed using etching (for example, dry etching or wet etching). Thereby, the insulating layer 120 is formed. Thereby, the light emitting region 122 and the contact portion 124 are defined. For example, when the insulating layer 120 is formed of polyimide, the insulating layer 120 is subjected to heat treatment. Thereby, imidation of the insulating layer 120 proceeds. By this heat treatment, the resistance of the Al alloy layer of the lead wires 130 and 160 can be lowered. The reason for this is considered that Nd moves to the grain boundaries of Al by heat during the heat treatment. From this point, it can be said that the lead wirings 130 and 160 are preferably a four-layer structure of ITO, Mo alloy layer, Al alloy layer, and Mo alloy layer.

Next, an insulating film to be the partition wall 170 is formed on the insulating layer 120, and this insulating film is selectively removed using etching (for example, dry etching or wet etching). Thereby, the partition 170 is formed. In the case where the partition 170 is formed using a photosensitive insulating film, the cross-sectional shape of the partition 170 can be changed to an inverted trapezoid by adjusting the conditions during exposure and development.

When the partition wall 170 is a negative resist, the portion of the negative resist irradiated with the irradiation light from the exposure light source is cured. The partition 170 is formed by dissolving and removing the uncured portion of the negative resist with a developer.

Next, each layer to be the organic layer 140 is sequentially formed in the light emitting region 122 defined by the insulating film 120. Among these layers, at least the hole injection layer is formed using a coating method such as spray coating, dispenser coating, inkjet, or printing. In this case, the coating material enters the light emitting region 122, and the coating material is dried, whereby the above-described layers are formed. As a coating material used in the coating method, a polymer material, a polymer material containing a low-molecular material, or the like is suitable. As the coating material, for example, a polyalkylthiophene derivative, a polyaniline derivative, triphenylamine, a sol-gel film of an inorganic compound, an organic compound film containing a Lewis acid, a conductive polymer, or the like can be used. The remaining layers (for example, electron transport layers) of the organic layer 140 are formed by a vapor deposition method. However, these layers may also be formed using any of the above-described coating methods.

Next, the second electrode 150 is formed on the organic layer 140 by using, for example, a vapor deposition method or a sputtering method.

Note that at least one of the layers other than the organic layer 140, for example, the first electrode 110, the insulating layer 120, the lead-out wiring 130, the lead-out wiring 160, the second electrode 150, and the partition wall 170 is also formed using any of the above-described coating methods. It may be formed.

Next, the protective film 210 is formed using the method described above. Thereafter, the electrical component 40 is mounted on the substrate 100 of the optical device 10 using the method described in the embodiment.

Also in this example, for the same reason as in the embodiment, the opening 212 is easily formed in the protective film 210 on the lead wirings 130 and 160, and the lead wirings 130 and 160 located in the opening 212 and the electrical component 40 Can be easily connected.

(Example 2)
FIG. 10 is a plan view illustrating the configuration of the optical device 10 according to the second embodiment. 11 is a cross-sectional view taken along the line DD of FIG. 12 is a cross-sectional view taken along line EE of FIG. The optical device 10 according to the present embodiment has the same configuration as the optical device 10 according to the first embodiment except for the following points.

First, the ends of the lead wires 130 and 160, that is, the terminals electrically connected to the first electrode 110 and the terminals electrically connected to the second electrode 150 are both at the edge of the protective film 210 and the edge of the substrate 100. Located between. And the bonding wire 200 is connected to these terminals.

Specifically, as shown in FIG. 11, the conductive layer 134 has a configuration in which a first layer 302, a second layer 304 (conductive layer), and a third layer 306 (protective layer) are stacked in this order. Yes. The first layer 302 and the third layer 306 are, for example, a Mo alloy layer in which Nb is added to Mo, and the second layer 304 is, for example, an Al alloy layer in which Nd is added to Al. The thickness of the first layer 302 is, for example, 50 nm or more and 200 nm or less, and the thickness of the second layer 304 is, for example, 100 nm or more and 1000 nm or less. Further, the thickness of the third layer 306 is less than the thickness of the first layer 302, for example, not less than 5 nm and not more than 20 nm.

Further, the bonding wire 200 has a conductive layer 202 and a covering layer 204. The conductive layer 202 is made of a metal such as silver (Vickers hardness of 24 HV), copper (Vickers hardness of about 70 HV), platinum (Vickers hardness of 41 HV), or chromium (Vickers hardness of 750 HV or more). The material forming the conductive layer 202 is not necessarily a single material component, and may be an alloy having a plurality of material components. The covering layer 204 covers the conductive layer 202 and is formed of a material harder than the conductive layer 202. For example, when the material of the conductive layer 202 is copper (Cu) having a purity of 99.9% by mass, the material of the coating layer 204 is palladium (Pd) or platinum (Pt) having a purity of 99.9% by mass. The covering layer 204 is formed by, for example, sputtering, vapor deposition, or plating.

Thus, the third layer 306 is thin, and the bonding wire 200 has a structure in which the conductive layer 202 is covered with the covering layer 204. For this reason, for example, when the bonding wire 200 is connected to the conductive layer 134 of the lead-out wiring 130 using an ultrasonic bonding method, a portion of the third layer 306 that is in contact with the bonding wire 200 is easily cracked, The portion of the third layer 306 that is in contact with the bonding wire 200 starting from this crack is removed. Therefore, an opening is formed in the third layer 306. Then, the conductive layer 202 of the bonding wire 200 and the second layer 304 of the conductive layer 134 are bonded through this opening.

An intermetallic compound 206 such as an alloy layer is formed at the interface between the conductive layer 202 and the second layer 304. The intermetallic compound 206 is, for example, an intermetallic compound (or alloy) of a metal contained in the conductive layer 202 and a metal contained in the second layer 304. For example, when the conductive layer 202 has Cu as a main component and the second layer 304 has Al as a main component, the intermetallic compound 206 is an alloy of Cu and Al, for example, Al ₂ Cu.

Also, as shown in FIG. 12, the width of the third layer 306 is narrower than the width of the second layer 304. Further, the second layer 304 is inclined in the direction in which the width of the second layer 304 becomes narrower as it goes upward. The reason for this is as follows.

The conductive layer 134 is patterned using wet etching. Here, the second layer 304 is more easily etched than the third layer 306. For this reason, the side surface of the second layer 304 is inclined in the direction in which the width of the second layer 304 becomes narrower as it goes upward.

According to the present embodiment, an opening is formed in the third layer 306 of the conductive layer 134. Through this opening, the conductive layer 202 of the bonding wire 200 and the second layer 304 of the conductive layer 134 are joined. An intermetallic compound 206 is formed at the interface between the conductive layer 202 and the second layer 304. Therefore, the bonding between the bonding wire 200 and the conductive layer 134 is stronger than when the bonding wire 200 is bonded to the third layer 306.

In addition, according to above-described embodiment and Example, the following content is disclosed.
(Appendix 1)
A substrate having a conductor and a covering of the conductor, an electrical component, and an anisotropic conductive film connected to the conductor and the electrical component,
A connection structure for electrical parts, wherein the anisotropic conductive film is present in an opening of the covering.
(Appendix 2)
The electrical component connection structure according to appendix 1, wherein the opening is covered with the anisotropic conductive film.
(Appendix 3)
The electrical component connection structure according to appendix 2, wherein the opening is formed across the conductor.
(Appendix 4)
The electrical component connection structure according to appendix 2, wherein the opening is formed across the inside and outside of the conductor.
(Appendix 5)
The electrical component connection structure according to appendix 3, wherein a plurality of the openings are formed in parallel.
(Appendix 6)
The electrical component connection structure according to appendix 5, wherein the plurality of conductors are arranged in parallel to an edge of the substrate.
(Appendix 7)
The electrical component connection structure according to appendix 6, wherein the conductor is connected to an organic EL element formed on the substrate.
(Appendix 8)
The electrical component connection structure according to appendix 7, wherein the two openings located at both ends in the arrangement of the plurality of openings have different directions in plan view.
(Appendix 9)
The anisotropic conductive film includes conductive particles,
The electrical component connection structure according to appendix 8, wherein a height of the conductive particles in contact with the conductor is larger than a thickness of the covering.
(Appendix 10)
The electrical component connection structure according to appendix 9, wherein the covering is a sealing film.

As mentioned above, although embodiment and the Example were described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

This application claims priority based on Japanese Patent Application No. 2013-075613 filed on April 1, 2013, the entire disclosure of which is incorporated herein.

Claims (6)

An optical element;
A terminal portion electrically connected to the optical element;
An electrical component joined to the terminal portion;
With
The terminal portion is
A conductor and a conductive protective film formed on the conductor;
Have
An optical device in which the electrical component and the conductor are joined through an opening of the protective film. The optical device according to claim 1.
The optical device is an optical device which is conductive particles of an anisotropic conductive film. The optical device according to claim 1.
The optical device is an optical device which is a bonding wire. The optical device according to claim 1.
A sealing film covering the optical element;
An optical device in which the sealing film exposes a terminal portion. A substrate having a conductor and a covering of the conductor, an electrical component, and an anisotropic conductive film connected to the conductor and the electrical component,
An optical apparatus comprising the anisotropic conductive film in an opening of the covering. The optical device according to claim 5.
The optical device, wherein the covering is a conductive protective film formed on the conductor.

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