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WO2014032312A1 - 阵列基板的图形修补装置及方法 - Google Patents

阵列基板的图形修补装置及方法 Download PDF

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Publication number
WO2014032312A1
WO2014032312A1 PCT/CN2012/080938 CN2012080938W WO2014032312A1 WO 2014032312 A1 WO2014032312 A1 WO 2014032312A1 CN 2012080938 W CN2012080938 W CN 2012080938W WO 2014032312 A1 WO2014032312 A1 WO 2014032312A1
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WO
WIPO (PCT)
Prior art keywords
pattern
defect
coated
exposure
array substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2012/080938
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English (en)
French (fr)
Inventor
林勇佑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
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Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US13/695,622 priority Critical patent/US20150209812A1/en
Publication of WO2014032312A1 publication Critical patent/WO2014032312A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
    • B05B12/084—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to condition of liquid or other fluent material already sprayed on the target, e.g. coating thickness, weight or pattern
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure

Definitions

  • the present invention relates to the field of liquid crystal production technology, and in particular to a pattern repairing device and method for an array substrate.
  • the mask In the production of liquid crystal displays, the mask (MASK) is an indispensable component, such as the fabrication of thin film field effect transistors (Thin Film Transistor, TFT) Pixel area of the substrate, or color filter (Color In the process of the color-resistance regions (R, G, and B) of the Filter, CF) substrate, a photomask is required.
  • FIG. 1 is a schematic top plan view of a reticle in the prior art.
  • the reticle 10 includes a transparent glass 11 , a photoresist layer 12 superposed on the transparent glass 11 , a light transmissive region 13 formed in the same layer as the photoresist layer 12 and formed between the photoresist layers 12 ,
  • the photoresist layer 12 is opaque, and the photoresist layer 12 and the transparent region 13 together form a reticle pattern.
  • the reticle 10 is used to illuminate the layer to be etched on the substrate, an exposed pattern is formed on the layer to be etched, and the exposed pattern needs to be detected and detected.
  • the results include two cases: one is that there is excess photoresist in the pattern after exposure; the other is that there is a wire breakage defect in the pattern after exposure, which may be caused by cracking of the photoresist bubble of the layer to be etched.
  • the excess photoresist in the post-exposure pattern can be removed by a cleaning device.
  • the substrate forming the exposed pattern needs to be re-masked or directly scrapped, which not only causes waste of cost, but also affects liquid crystal production efficiency.
  • the handling of the wire break defect not only causes cost waste, but also affects liquid crystal production efficiency.
  • An object of the present invention is to provide a pattern repairing device for an array substrate, which solves the problem that the processing of the wire breakage defect is not only wasteful when the wire breakage defect is present on the layer to be etched in the prior art. It also affects the technical problems of liquid crystal production efficiency.
  • Another object of the present invention is to provide a pattern repairing method for an array substrate, which solves the problem that the processing of the wire breakage defect is not only costly when the wire defect is formed in the image to be etched on the layer to be etched in the prior art. And also affect the technical problems of liquid crystal production efficiency
  • the invention constructs a pattern repairing device for an array substrate, wherein the device comprises:
  • a lighting unit configured to illuminate the reticle after the reticle is placed over the substrate to form an exposed pattern on the layer to be etched of the substrate;
  • a detecting unit configured to detect an exposed image on the layer to be etched, and determine whether the image after the exposure has a wire break defect
  • a coating unit configured to form a protective layer at the wire break defect when determining that the pattern has a wire break defect after the exposure
  • An etching unit is configured to etch the layer to be etched formed with the protective layer.
  • the detecting unit specifically includes:
  • An image acquisition unit configured to acquire an image of the post-exposure graphic
  • a display unit configured to display an image acquired by the image acquiring unit to an operator, and the operator determines whether the image after the exposure has a defect to be coated.
  • the coating unit comprises a nozzle.
  • An object of the present invention is to provide a pattern repairing device for an array substrate, which solves the problem that the processing of the wire breakage defect is not only wasteful when the wire breakage defect is present on the layer to be etched in the prior art. It also affects the technical problems of liquid crystal production efficiency.
  • the present invention constructs a pattern repairing device for an array substrate, the device comprising:
  • a lighting unit configured to illuminate the reticle after the reticle is placed over the substrate to form an exposed pattern on the layer to be etched of the substrate;
  • a detecting unit configured to detect a post-exposure pattern on the layer to be etched, and determine whether the post-exposure pattern has a defect to be coated
  • a coating unit for coating a protective layer to be coated at a defect to be coated after determining that the pattern has a defect to be coated after the exposure.
  • the detecting unit specifically includes:
  • An image acquisition unit configured to acquire an image of the post-exposure graphic
  • a display unit configured to display an image acquired by the image acquiring unit to an operator, and the operator determines whether the image after the exposure has a defect to be coated.
  • the graphic repairing device of the array substrate further includes:
  • An etching unit is configured to etch the layer to be etched formed with the protective layer.
  • the coating unit comprises a nozzle.
  • the defect to be coated is a wire break defect.
  • Another object of the present invention is to provide a pattern repairing method for an array substrate, which solves the problem that the processing of the wire breakage defect is not only costly when the wire defect is formed in the image to be etched on the layer to be etched in the prior art. It also affects the technical problems of liquid crystal production efficiency.
  • the present invention constructs a pattern repairing method for an array substrate, and the method includes the following steps:
  • the reticle is illuminated to form a post-exposure pattern on the layer to be etched of the substrate;
  • the post-exposure pattern has a defect to be coated, a protective layer is formed on the defect to be coated.
  • the step of detecting the etched pattern specifically includes:
  • the acquired image is displayed, and the operator judges whether the post-exposure pattern has a defect to be coated.
  • the method further comprises the following steps:
  • the layer to be etched formed with the protective layer is etched.
  • the step of coating the protective layer at the defect to be coated specifically includes:
  • the protective layer is formed by coating at the defect to be coated by a nozzle.
  • the defect to be coated is a wire break defect.
  • the present invention adds a coating unit, such as a nozzle, to the existing repairing machine, and directly determines the defect to be coated by the coating unit when it is determined that the pattern has a defect to be coated after the exposure.
  • the coating is formed to form a protective layer.
  • the present invention does not need to scrap the array substrate in which the wire breakage defect is present, but directly forms a protective layer on the defect to be coated, which is not only efficient but also low in cost.
  • FIG. 1 is a schematic structural view of a reticle in the prior art
  • FIG. 2 is a schematic structural view of a preferred embodiment of a pattern repairing device for an array substrate according to the present invention
  • 3A-3C are schematic structural views of a pattern after exposure at various stages in a pattern repairing process of an array substrate according to the present invention
  • FIG. 4 is a schematic flow chart of a preferred embodiment of a pattern repairing method for an array substrate according to the present invention.
  • FIG. 2 is a schematic structural view of a preferred embodiment of a pattern repairing device for an array substrate according to the present invention.
  • the pattern repairing device of the array substrate includes an illumination unit 21, a detection unit 22, a coating unit 23, a cleaning unit 24, and an etching unit 25.
  • the detection unit 22 further includes an image acquisition unit 221 and a display unit 222.
  • the illumination unit 21 is configured to illuminate the reticle after the reticle is placed over the substrate to form an exposed pattern on the layer to be etched of the substrate.
  • the detecting unit 22 is configured to detect the post-exposure pattern on the layer to be etched.
  • the detection result includes the following two cases: one is that the pattern after the exposure has a defect to be coated, such as a wire break defect; and the other is that the pattern after the exposure has a photoresist to be removed, such as an unnecessary photoresist.
  • the image acquiring unit 221 of the detecting unit 22 is configured to acquire an image of the image after the exposure
  • the display unit 222 is configured to display the image acquired by the image acquiring unit 221 to an operator. It is judged by the operator whether the pattern after the exposure has a defect to be coated or a photoresist to be removed.
  • the coating unit 23 is coated to form a protective layer at the defect to be coated, and in the subsequent process, the photoresist corresponding to the defect to be coated is protected from being damaged. After etching, the layer to be etched formed with the protective layer is etched by the etching unit 25. If the photoresist has a photoresist to be removed after the exposure, the cleaning unit 24 removes the photoresist to be removed, and then etches the layer to be etched by the etching unit 25.
  • the defect to be coated of the post-exposure pattern may be a wire break defect, and may of course be other defects.
  • the coating unit 23 preferably includes a nozzle (Nozzle).
  • a reticle 30 is shown in FIG. 3A, wherein the reticle 30 is provided with a reticle pattern having a light-shielding region 31 and a light-transmitting region 32, and the light-shielding region 31 is formed by coating with a photoresist material for shielding light.
  • the reticle 30 is placed over the substrate 40 (please refer to FIG. 3B together), wherein the substrate 40 is coated with a layer to be etched (not shown).
  • the illumination unit 21 is then controlled to illuminate the reticle 30 to form a post-exposure pattern on the layer of the substrate 40 to be etched.
  • the control detecting unit 22 detects the image after the exposure, in particular, the image of the post-exposure graphic is acquired by the image acquiring unit 221, and the acquired image of the post-exposure graphic is displayed to the operator through the display unit 222.
  • the post-exposure pattern On the substrate 40 shown in FIG. 3B, the post-exposure pattern has a line break defect 41.
  • the substrate 40 is then placed on the platform, and the coating unit 23 is controlled to apply a protective layer 42 at the wire breakage defect 41 of the exposed pattern.
  • the protective layer 42 may be a photoresist material.
  • the protective layer 42 is used to protect the corresponding layer to be etched from being etched.
  • the coating unit 23 is directly at the disconnection defect 41. Coating forms a protective layer 42 without scrapping the substrate 40 on which the wire breakage defects 42 are formed or re-routing the mask, which is not only efficient but also low in cost.
  • FIG. 4 is a schematic flow chart of a preferred embodiment of a pattern repairing method for an array substrate according to the present invention.
  • step S401 after the photomask is placed over the substrate, the photomask is illuminated to form an exposed image on the layer to be etched of the substrate.
  • step S402 the post-exposure pattern is detected. If it is determined that the post-exposure pattern has a defect to be coated, step S403 is performed; if it is determined that the post-exposure pattern has a photoresist to be cleared, step S404 is performed.
  • the step of detecting the post-exposure pattern specifically includes: acquiring an image of the post-exposure pattern, displaying the acquired image to an operator, and determining, by the operator, whether there is a defect to be coated, including two cases: After the exposure, the pattern has defects to be coated, such as a wire breakage defect; and second, it is detected that the pattern has a photoresist to be removed after the exposure.
  • step S403 a protective layer is formed by coating on the defect to be coated of the pattern after exposure.
  • step S404 the photoresist to be cleared is cleared.
  • step S405 the layer to be etched is etched.
  • the present invention preferably uses a nozzle to coat the protective layer at the defect to be coated.
  • the invention adds a coating unit, such as a nozzle, to the existing repairing machine, and when it is determined that the pattern has a defect to be coated after the exposure, the coating unit directly coats the defect to be coated to form a protection.
  • a coating unit such as a nozzle
  • the present invention does not need to scrap the array substrate having the wire breakage defect, but directly coats the defect to be coated to form a protective layer, which is not only efficient but also low in cost.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)

Description

阵列基板的图形修补装置及方法 技术领域
本发明涉及液晶生产技术领域，特别是涉及一种阵列基板的图形修补装置及方法。
 背景技术
随着液晶技术的不断发展，对液晶生产效率提出了很高的要求。
在液晶显示器的制作过程中，光罩 (MASK)是必不可少的制作部件，譬如在制作薄膜场效应晶体管（Thin Film Transistor，TFT）基板的像素区、或者彩色滤光片（Color Filter，CF）基板的色阻区（R、G和B）的过程中，都需要用到光罩。
请参阅图1，图1为现有技术中一种光罩的俯视结构示意图。光罩10包括透明玻璃11，叠加于所述透明玻璃11上的光阻层12，与所述光阻层12位于同一层、且形成于所述光阻层12之间的透光区13，其中所述光阻层12不透光，所述光阻层12和所述透光区13共同形成光罩图案。
在TFT基板的制作过程中，通过所述光罩10对基底上的待刻蚀层进行光照后，会在待刻蚀层上形成曝光后图形，此时需要对该曝光后图形进行检测，检测结果包括两种情况：一是曝光后图形存在多余的光阻；二是曝光后图形存在断线缺陷，该断线缺陷可能有待刻蚀层的光阻气泡破裂引起。
针对上述第一种情况，可以通过清除设备（Repair）去除所述曝光后图形中多余的光阻。而针对上述第二种情况，则需要将所述形成曝光后图形的基底重新进行光罩，或者直接报废，不仅造成成本的浪费，而且影响液晶生产效率。
综上，一旦待刻蚀层上的曝光后图形存在断线缺陷，对该断线缺陷的处理不仅造成成本浪费，而且还影响液晶生产效率。
 技术问题
本发明的一个目的在于提供一种阵列基板的图形修补装置，以解决现有技术中待刻蚀层上的曝光后图形存在断线缺陷时，对该断线缺陷的处理不仅造成成本浪费，而且还影响液晶生产效率的技术问题。
本发明的另一个目的在于提供一种阵列基板的图形修补方法，以解决现有技术中待刻蚀层上的曝光后图形存在断线缺陷时，对该断线缺陷的处理不仅造成成本浪费，而且还影响液晶生产效率的技术问题
 技术解决方案
本发明构造了一种阵列基板的图形修补装置，其中所述装置包括：
光照单元，用于在将光罩置于基底上方后，对所述光罩实施光照，以在所述基底的待刻蚀层形成曝光后图形；
检测单元，用于对所述待刻蚀层上的曝光后图形进行检测，判断所述曝光后图形是否存在断线缺陷；
涂布单元，其用于在判定所述曝光后图形存在断线缺陷时，在断线缺陷处涂布形成一保护层；以及
刻蚀单元，用于对形成有保护层的待刻蚀层进行刻蚀。
在本发明一实施例中：所述检测单元具体包括：
图像获取单元，用于获取所述曝光后图形的图像；以及
显示单元，用于将所述图像获取单元获取的图像显示给操作人员，由操作人员判断所述曝光后图形是否存在待涂布缺陷。
在本发明一实施例中：所述涂布单元包含喷嘴。
本发明的一个目的在于提供一种阵列基板的图形修补装置，以解决现有技术中待刻蚀层上的曝光后图形存在断线缺陷时，对该断线缺陷的处理不仅造成成本浪费，而且还影响液晶生产效率的技术问题。
为解决上述技术问题，本发明构造了一种阵列基板的图形修补装置，所述装置包括：
光照单元，用于在将光罩置于基底上方后，对所述光罩实施光照，以在所述基底的待刻蚀层形成曝光后图形；
检测单元，用于对所述待刻蚀层上的曝光后图形进行检测，判断所述曝光后图形是否存在待涂布缺陷；以及
涂布单元，其用于在判定所述曝光后图形存在待涂布缺陷时，在待涂布缺陷处涂布形成一保护层。
在本发明一实施例中：所述检测单元具体包括：
图像获取单元，用于获取所述曝光后图形的图像；以及
显示单元，用于将所述图像获取单元获取的图像显示给操作人员，由操作人员判断所述曝光后图形是否存在待涂布缺陷。
在本发明一实施例中：所述阵列基板的图形修补装置还包括：
刻蚀单元，用于对形成有保护层的待刻蚀层进行刻蚀。
在本发明一实施例中：所述涂布单元包含喷嘴。
在本发明一实施例中：所述待涂布缺陷为断线缺陷。
本发明的另一个目的在于提供一种阵列基板的图形修补方法，以解决现有技术中待刻蚀层上的曝光后图形存在断线缺陷时，对该断线缺陷的处理不仅造成成本浪费，而且还影响液晶生产效率的技术问题。
为解决上述技术问题，本发明构造了一种阵列基板的图形修补方法，所述方法包括以下步骤：
在将光罩置于基底上方后，对所述光罩实施光照，以在所述基底的待刻蚀层形成曝光后图形；
对所述待刻蚀层上的曝光后图形进行检测，判断所述曝光后图形是否存在待涂布缺陷；
若所述曝光后图形存在待涂布缺陷，则在所述待涂布缺陷处涂布形成一保护层。
在本发明一实施例中：对所述刻蚀图案进行检测的步骤具体包括：
获取所述曝光后图形的图像；以及
将获取的图像显示，由操作人员判断所述曝光后图形是否存在待涂布缺陷。
在本发明一实施例中：在待涂布缺陷处涂布形成一保护层的步骤之后，所述方法还包括以下步骤：
对形成有保护层的待刻蚀层进行刻蚀。
在本发明一实施例中：在所述待涂布缺陷处涂布形成所述保护层的步骤具体包括：
通过喷嘴在所述待涂布缺陷处涂布形成所述保护层。
在本发明一实施例中：所述待涂布缺陷为断线缺陷。
 有益效果
相对于现有技术，本发明通过在现有的修补机的基础上增加一涂布单元，譬如喷嘴，在判定曝光后图形存在待涂布缺陷时，通过该涂布单元直接在待涂布缺陷处涂布形成一保护层，显然，本发明无需将存在断线缺陷的阵列基板报废，而是直接在待涂布缺陷处涂布形成保护层，不仅效率高，而且成本低。
 附图说明
图1为现有技术中光罩的结构示意图；
图2为本发明中阵列基板的图形修补装置的较佳实施例结构示意图；
图3A-3C为本发明中对阵列基板的图形修补过程中各阶段曝光后图形的结构示意图；
图4为本发明中阵列基板的图形修补方法的较佳实施例流程示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
图2为本发明提供的阵列基板的图形修补装置的较佳实施例结构示意图。
所述阵列基板的图形修补装置包括光照单元21、检测单元22、涂布单元23、清除单元24以及刻蚀单元25，而所述检测单元22还包括图像获取单元221和显示单元222。
所述光照单元21用于在将光罩置于基底上方后，对所述光罩实施光照，以在基底的待刻蚀层形成曝光后图形。所述检测单元22用于对所述待刻蚀层上的曝光后图形进行检测。其中检测结果包括以下两种情况：一是所述曝光后图形存在待涂布缺陷，譬如断线缺陷；二是所述曝光后图形存在待清除光阻，譬如多余的光阻。
在具体实施过程中，所述检测单元22的图像获取单元221用于获取所述曝光后图形的图像，而所述显示单元222用于将所述图像获取单元221获取的图像显示给操作人员，由操作人员判断所述曝光后图形是否存在待涂布缺陷或者待清除光阻。
若所述曝光后图形存在待涂布缺陷，则所述涂布单元23在所述待涂布缺陷处涂布形成一保护层，在后续制程中，保护待涂布缺陷对应的光阻不被刻蚀，之后由所述刻蚀单元25对形成有保护层的待刻蚀层进行刻蚀。若所述曝光后图形存在待清除光阻，则所述清除单元24将该待清除光阻清除，之后由所述刻蚀单元25对待刻蚀层进行刻蚀。
其中所述曝光后图形的待涂布缺陷可以为断线缺陷，当然可以是其它的缺陷。而所述涂布单元23优选包括喷嘴（Nozzle）。
下面结合图3A和图3C来说明本发明提供的阵列基板的图形修补装置的工作过程：
提供3A所示的光罩30，其中光罩30上设置有光罩图案，该光罩图案具有遮光区31和透光区32，遮光区31由光阻材料涂布形成，用来遮光。
将光罩30置于基底40上方（请一并参阅图3B），其中所述基底40上涂布有待刻蚀层（图未标示）。之后控制所述光照单元21对光罩30进行光照，以在所述基底40的待刻蚀层上形成曝光后图形。
之后所述控制检测单元22对曝光后图形进行检测，具体为：通过所述图像获取单元221获取曝光后图形的图像，通过所述显示单元222将获取的曝光后图形的图像显示给操作人员。在图3B所示的基底40上，所述曝光后图形存在一断线缺陷41。
之后将所述基底40置于平台上，控制所述涂布单元23在曝光后图形的断线缺陷41处涂布一保护层42，譬如请参阅图3C，该保护层42可为光阻材料，该保护层42用于保护对应的待刻蚀层不被刻蚀。
本发明通过在现有修补机的基础上增加一涂布单元23，譬如喷嘴，在判定基底40上的曝光后图形存在断线缺陷41时，通过该涂布单元23直接在断线缺陷41处涂布形成一保护层42，而无需将形成有断线缺陷42的基底40报废或者重新进行光罩制程，不仅效率高，而且成本低。
图4为本发明中阵列基板的图形修补方法的较佳实施例流程示意图。
在步骤S401中，将光罩置于基底上方后，对所述光罩实施光照以在基底的待刻蚀层上形成曝光后图形。
在步骤S402中，对所述曝光后图形进行检测，若判定所述曝光后图形存在待涂布缺陷，进行步骤S403；若判定所述曝光后图形存在待清除光阻，则进行步骤S404。
对所述曝光后图形进行检测的步骤具体包括：获取所述曝光后图形的图像，将获取的图像显示给操作人员，由操作人员判断是否存在待涂布缺陷，包括两种情况：一是检测到所述曝光后图形存在待涂布缺陷，譬如断线缺陷；二是检测到所述曝光后图形存在待清除光阻。
在步骤S403中，在曝光后图形的待涂布缺陷处涂布形成一保护层。
在步骤S404中，将所述待清除光阻清除。
在步骤S405中，对待刻蚀层进行刻蚀。
本发明优选使用喷嘴在所述待涂布缺陷处涂布形成所述保护层。
本发明通过在现有的修补机的基础上增加一涂布单元，譬如喷嘴，在判定曝光后图形存在待涂布缺陷时，通过该涂布单元直接在待涂布缺陷处涂布形成一保护层，显然，本发明无需将存在断线缺陷的阵列基板报废，而是直接在待涂布缺陷处涂布形成保护层，不仅效率高，而且成本低。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
工业实用性
序列表自由内容

Claims (13)

  1. 一种阵列基板的图形修补装置，其中所述装置包括：
    光照单元，用于在将光罩置于基底上方后，对所述光罩实施光照，以在所述基底的待刻蚀层形成曝光后图形；
    检测单元，用于对所述待刻蚀层上的曝光后图形进行检测，判断所述曝光后图形是否存在断线缺陷；
    涂布单元，其用于在判定所述曝光后图形存在断线缺陷时，在断线缺陷处涂布形成一保护层；以及
    刻蚀单元，用于对形成有保护层的待刻蚀层进行刻蚀。
  2. 根据权利要求1所述的阵列基板的图形修补装置，其中所述检测单元具体包括：
    图像获取单元，用于获取所述曝光后图形的图像；以及
    显示单元，用于将所述图像获取单元获取的图像显示给操作人员，由操作人员判断所述曝光后图形是否存在待涂布缺陷。
  3. 根据权利要求1所述的阵列基板的图形修补装置，其中所述涂布单元包含喷嘴。
  4. 一种阵列基板的图形修补装置，其中所述装置包括：
    光照单元，用于在将光罩置于基底上方后，对所述光罩实施光照，以在所述基底的待刻蚀层形成曝光后图形；
    检测单元，用于对所述待刻蚀层上的曝光后图形进行检测，判断所述曝光后图形是否存在待涂布缺陷；以及
    涂布单元，其用于在判定所述曝光后图形存在待涂布缺陷时，在待涂布缺陷处涂布形成一保护层。
  5. 根据权利要求4所述的阵列基板的图形修补装置，其中所述检测单元具体包括：
    图像获取单元，用于获取所述曝光后图形的图像；以及
    显示单元，用于将所述图像获取单元获取的图像显示给操作人员，由操作人员判断所述曝光后图形是否存在待涂布缺陷。
  6. 根据权利要求4所述的阵列基板的图形修补装置，其中所述阵列基板的图形修补装置还包括：
    刻蚀单元，用于对形成有保护层的待刻蚀层进行刻蚀。
  7. 根据权利要求4所述的阵列基板的图形修补装置，其中所述涂布单元包含喷嘴。
  8. 根据权利要求4所述的阵列基板的图形修补装置，其中所述待涂布缺陷为断线缺陷。
  9. 一种阵列基板的图形修补方法，其中所述方法包括以下步骤：
    在将光罩置于基底上方后，对所述光罩实施光照，以在所述基底的待刻蚀层形成曝光后图形；
    对所述待刻蚀层上的曝光后图形进行检测，判断所述曝光后图形是否存在待涂布缺陷；
    若所述曝光后图形存在待涂布缺陷，则在所述待涂布缺陷处涂布形成一保护层。
  10. 根据权利要求9所述的阵列基板的图形修补方法，其中对所述刻蚀图案进行检测的步骤具体包括：
    获取所述曝光后图形的图像；以及
    将获取的图像显示，由操作人员判断所述曝光后图形是否存在待涂布缺陷。
  11. 根据权利要求9所述的阵列基板的图形修补方法，其中在待涂布缺陷处涂布形成一保护层的步骤之后，所述方法还包括以下步骤：
    对形成有保护层的待刻蚀层进行刻蚀。
  12. 根据权利要求9所述的阵列基板的图形修补方法，其中在所述待涂布缺陷处涂布形成所述保护层的步骤具体包括：
    通过喷嘴在所述待涂布缺陷处涂布形成所述保护层。
  13. 根据权利要求9所述的阵列基板的图形修补方法，其中所述待涂布缺陷为断线缺陷。
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