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WO2013051070A1 - Élément électroluminescent et procédé de fabrication d'un élément électroluminescent - Google Patents

Élément électroluminescent et procédé de fabrication d'un élément électroluminescent Download PDF

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Publication number
WO2013051070A1
WO2013051070A1 PCT/JP2011/005655 JP2011005655W WO2013051070A1 WO 2013051070 A1 WO2013051070 A1 WO 2013051070A1 JP 2011005655 W JP2011005655 W JP 2011005655W WO 2013051070 A1 WO2013051070 A1 WO 2013051070A1
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WIPO (PCT)
Prior art keywords
layer
light emitting
functional layer
sealing
cathode
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Ceased
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PCT/JP2011/005655
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English (en)
Japanese (ja)
Inventor
全健 金
寛 湯淺
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Panasonic Corp
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Panasonic Corp
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Priority to PCT/JP2011/005655 priority Critical patent/WO2013051070A1/fr
Publication of WO2013051070A1 publication Critical patent/WO2013051070A1/fr
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/341—Short-circuit prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to a light emitting element including a light emitting part and a sealing part, and a method for manufacturing the light emitting element.
  • Some light emitting elements include a light emitting portion in which a light emitting layer is sandwiched between an anode and a cathode.
  • the light emitting layer and the cathode are affected by a gas such as moisture and oxygen (hereinafter also simply referred to as “gas such as moisture” or “gas”). Specifically, the light emitting layer has light emitting characteristics that are degraded by, for example, moisture, and the lifetime of the device is shortened.
  • the electrical characteristics of the cathode change due to, for example, oxygen. When the change in the electrical characteristics is large, electrons cannot be supplied to the light emitting layer, and light emission does not occur (so-called display defect).
  • a sealing portion is formed on the upper surface of the cathode in order to protect the light emitting layer and the cathode from gas such as moisture, that is, in order to prevent the gas from entering.
  • the sealing portion is required to have not only high gas barrier properties but also excellent light transmittance, and for example, a silicon nitride film (SiN film) or the like is used.
  • Patent Documents 1 and 2 a technique for forming a sealing portion by an atomic layer epitaxy method has been proposed (for example, Patent Documents 1 and 2).
  • the gas barrier property may be insufficient.
  • a defect for example, foreign matter is mixed in during the manufacturing process of the light emitting element, and the foreign matter is exposed without being completely covered by the sealing portion, a gap (groove) formed between the foreign matter and the sealing portion. ) Gas enters and causes display defects.
  • the above technique improves the gas barrier property of the sealing part when manufactured normally, and in the case where trouble such as contamination of foreign matter occurs, it may not be possible to suppress gas intrusion or the like. is there.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a light-emitting element and a method for manufacturing the light-emitting element that can ensure gas barrier properties even when a problem occurs.
  • a light-emitting element includes a light-emitting portion in which a plurality of functional layers are stacked, and an insulating sealing portion formed over the light-emitting portion.
  • the plurality of functional layers are formed on the lower functional layer in a state in which an opening is formed in a portion corresponding to a partial region of the lower functional layer, and a lower functional layer having an upper layer made of a conductive material.
  • An upper functional layer formed on the upper functional layer, and the sealing portion includes a first sealing layer formed on the upper functional layer excluding a peripheral surface constituting the opening in the upper functional layer, and the first functional layer.
  • a second sealing layer formed in units of atomic layers on the sealing layer, and the upper functional layer has one or more layers made of a conductive material, the layer made of the conductive material, and the opening The exposed portion is oxidized, and the oxidized portion is covered with the second sealing layer.
  • a method for manufacturing a light-emitting element includes: a lower functional layer having a layer made of a conductive material as an upper layer; an upper functional layer having one or more layers made of a conductive material; In the method for manufacturing a light-emitting element, comprising: a light-emitting part formed by laminating at least; and an insulating sealing part having a first sealing layer and a second sealing layer formed on the light-emitting part.
  • a fourth step of oxidizing the portion exposed kick in the opening a layer of conductive material, after said fourth step and a fifth step of forming a second sealing layer on an atomic layer unit performs.
  • the second sealing layer is formed in units of atomic layers. However, since it is formed along the upper surface shape, gas barrier properties can be secured.
  • the layer made of the conductive material constituting the upper functional layer is insulated. Furthermore, since the oxidized portion is covered with the second sealing layer, the intrusion of gas can be prevented and the insulation can be further improved.
  • the light-emitting element which is one embodiment of the present invention is a light-emitting element including a light-emitting portion in which a plurality of functional layers are stacked and an insulating sealing portion formed over the light-emitting portion.
  • a lower functional layer having an upper layer made of a conductive material, and an upper functional layer formed on the lower functional layer in a state having an opening in a portion corresponding to a partial region of the lower functional layer;
  • the sealing portion includes a first sealing layer formed on the upper functional layer excluding a peripheral surface constituting the opening in the upper functional layer, and an atomic layer unit on the first sealing layer
  • the upper functional layer has at least one layer made of a conductive material, and the portion exposed to the opening is oxidized by the layer made of the conductive material, The oxidation part is covered with the second sealing layer.
  • foreign matter is attached to the partial region of the lower functional layer, and the foreign matter has a layer of the same material as the upper functional layer and a layer of the same material as the first sealing layer formed on the foreign matter. In the state, it is covered with the second sealing layer. Thereby, even if a foreign material has electroconductivity, since it is coat
  • the partial region of the lower functional layer is covered with the second sealing layer except for a portion where the foreign matter is adhered.
  • all the upper surfaces of the light emitting part are covered with at least the second sealing layer, and the gas barrier property can be secured.
  • the layer made of the conductive material in the lower functional layer is an anode
  • the upper functional layer includes a light emitting functional layer and a cathode formed on the light emitting functional layer, and the conductive in the upper functional layer.
  • the layer made of the material includes a cathode
  • the light emitting functional layer further includes a light emitting layer including a light emitting material and an electron transporting layer that transports electrons to the light emitting layer.
  • the lower functional layer includes an anode, a light emitting layer formed on the anode, and an electron transport layer formed on the light emitting layer, and the electron transport layer is a layer made of the conductive material
  • the upper functional layer includes a cathode, and the layer made of a conductive material in the upper functional layer is a cathode.
  • a manufacturing method of a light-emitting element which is one embodiment of the present invention includes a light-emitting portion in which a lower functional layer having an upper layer made of a conductive material and an upper functional layer having one or more layers made of a conductive material are stacked. And a method of manufacturing a light emitting device including an insulating sealing portion having a first sealing layer and a second sealing layer formed on the light emitting portion.
  • a layer made of a conductive material in the upper functional layer formed in the second step by exposure A fourth step of oxidizing the portion exposed in the opening there, after the fourth step, a fifth step of forming a second sealing layer on an atomic layer unit performs.
  • the second sealing layer is formed by an atomic layer growth method or an atomic layer deposition method, and in the fourth step, oxygen is passed through for 100 to 20 seconds. Thereby, an oxide film can be easily formed.
  • the light-emitting element which is one embodiment of the present invention includes at least a layer made of a conductive material as the lower functional layer, and attention is paid to the layer made of the conductive material as follows.
  • the light emitting element has a first functional part and a second functional part different from the first functional part, and has a first functional layer having conductivity, and the first functional layer in the first functional layer.
  • a first functional region corresponding to one functional portion and having conductivity as a whole, and an opening region corresponding to the second functional portion in the first functional layer, the first functional region A second functional layer including one or a plurality of layers formed with an oxidized portion, a part of which is oxidized, and the first functional layer in the second functional layer.
  • the first sealing layer has a first sealing portion that covers a part or all of the surface of the functional region, includes a first sealing layer having insulating properties, and an insulating material, and the first sealing layer includes the first sealing layer.
  • a second sealing layer wherein not covered by the first sealing portion of the sealing layer is the oxide portion of the opening region side to cover the end portion.
  • the first functional layer corresponds to the upper layer of the lower functional layer.
  • the second functional portion of the first functional layer corresponds to a partial region of the lower functional layer.
  • the second functional layer corresponds to the upper functional layer, and the opening region corresponds to the opening.
  • a part of the end of the second functional layer on the opening region side corresponds to a portion exposed to the opening.
  • the first sealing layer corresponds to the first sealing layer, and the second sealing layer corresponds to the second sealing layer.
  • the first sealing layer has a second sealing portion corresponding to the opening region in the second functional layer, and is between the first sealing portion and the second sealing portion.
  • blocking the path can also be said to restrict the crack from extending until it comes into contact with the second functional part, and prevents the crack from contacting the second functional part directly. Used in concept.
  • the first functional layer is an anode
  • the second functional layer includes at least a layer containing a light emitting material, a layer containing an alkali metal or an alkaline earth metal, and a cathode.
  • the manufacturing method according to one embodiment of the present invention includes at least a layer made of a conductive material as the lower functional layer, but attention is paid to the layer made of the conductive material as follows.
  • a method for manufacturing a light emitting element includes a first step of forming a first functional layer having conductivity on a base layer (directly or indirectly), and a layer having conductivity on the first functional layer. Or a second step of forming a plurality of second functional layers, a third step of forming a first sealing layer having insulating properties on the second functional layer, and the first sealing layer. And a fourth step of forming a second sealing layer having an insulating property, wherein the second step is a region in the first functional layer where foreign matter is attached to the surface thereof. , Forming the second functional layer on a peripheral portion of the surface that is spaced apart from the foreign matter by a space, and the third step includes the first sealing layer as the foreign matter.
  • the second functional layer without covering a space formed between the second functional layer and the second functional layer formed in the periphery thereof.
  • oxygen in the atmosphere is not formed in the first functional layer through the space when forming the second sealing layer. It is a step of acting on the exposed surface to oxidize the portion.
  • the second sealing layer is formed using an atomic layer growth method in which the constituent material is deposited in an atomic state in an oxygen atmosphere.
  • the fourth step includes an oxygen aeration step in which an intermediate of the organic light emitting device in which the first sealing layer is formed in the third step is exposed to an oxygen atmosphere, and after the oxygen aeration step, A film forming step of forming the second sealing film by using an atomic layer growth method, and the oxygen aeration step allows oxygen to flow through the intermediate for 100 msec to 20 sec.
  • FIG. 1 is a block diagram schematically showing the overall configuration of a display device.
  • the display device 1 includes a display panel 10 and a drive control unit 20 connected to the display panel 10.
  • the display panel 10 is, for example, a top emission type organic EL display panel using an electroluminescence phenomenon of an organic material.
  • the drive control unit 20 includes four drive circuits 21 to 24 and a control circuit 25 that controls the drive circuits 21 to 24.
  • the display panel is not limited to the organic EL type using an organic material, but may be an inorganic EL type using an inorganic material, a bottom emission type organic EL type, or a bottom emission type inorganic.
  • An EL type may be used.
  • FIG. 2 is a partial cross-sectional view schematically showing a main part of the display panel 10.
  • the display panel 10 has a plurality of pixels (pixels) formed in a matrix on a substrate 101 as shown in the figure.
  • one pixel is composed of a plurality of (specifically, three) subpixels, and is composed of three subpixels arranged in the X direction.
  • the sub-pixel corresponds to the light-emitting element of the present invention.
  • the three sub-pixels are, for example, sub-pixels whose emission colors are red (R), green (G), and blue (B).
  • the substrate 101 has an interlayer insulating film 105 formed on a TFT substrate 103.
  • An anode 107 is formed on the substrate 101 in units of subpixels. Note that in this specification, the direction in which various functional layers are stacked on the substrate 101 is referred to as the upward direction, with the substrate 101 as a reference. This upward direction is the Z direction in FIG. 2, and the upper side is also referred to as the front side.
  • a hole injection layer 109 is formed on a region of the substrate 101 where the anode 107 is not formed and on the anode 107. Note that the hole injection layer 109 is formed on substantially the entire surface of the substrate 101 in the state where the anode 107 corresponding to the subpixel exists, and therefore, the adjacent anode 107 107 with reference to the hole injection layer 109 on the upper surface of the anode 107. Recess between.
  • Banks (partitions) 111 are formed in each of the regions corresponding to between the adjacent anodes 107 on the hole injection layer 109.
  • the bank 111 fills the gap between the adjacent anodes 107 and is above the hole injection layer 109 existing on the upper surface of the end portion of the anode 107 (in the thickness direction and away from the substrate 101). (It is the Z direction in the middle.)
  • the protruding shape has a trapezoidal shape, for example. Note that the banks 111 are formed in a cross-beam shape in plan view.
  • a predetermined light color (here, the above-described red, green, etc.) is formed on the hole injection layer 109 in each region defined by the bank 111 (in FIG. 2, the region corresponding to between the adjacent banks 111). , Blue).).
  • An electron transport layer 115, a cathode 117, and a sealing portion 119 are formed in this order on the surface region of the bank 111 above the light emitting layer 113 and on the light emitting layer 113.
  • the electron transport layer 115, the cathode 117, and the sealing portion 119 are formed so as to be continuous with those of other adjacent subpixels beyond the region defined by the bank 111.
  • the sealing part 119 has a two-layer structure of a first sealing layer 121 and a second sealing layer 123 formed on the surface of the first sealing layer.
  • the light emitting portion of the light emitting element includes a plurality of functional layers from the anode 107 to the cathode 119.
  • the functional layer refers to a layer having some function for light emission.
  • the TFT substrate 103 is, for example, alkali-free glass, soda glass, non-fluorescent glass, phosphate glass, borate glass, quartz, acrylic resin, styrene series TFT, wiring member, and passivation film for covering the TFT on the substrate body of an insulating material such as resin, polycarbonate resin, epoxy resin, polyethylene, polyester, silicone resin, or alumina (not shown) It is the structure which formed.
  • the substrate body may be an organic resin film.
  • (1-2) Interlayer Insulating Film The interlayer insulating film 105 is provided to adjust the surface step of the TFT substrate 103 to be flat, and is made of an insulating material such as polyimide resin or acrylic resin.
  • (2) Anode The anode 107 is made of aluminum (Al) or an aluminum alloy.
  • the anode 107 may be formed of, for example, silver (Ag), an alloy of silver, palladium (Pd), and copper (Cu), an alloy of silver, rubidium (Rb), and gold (Au), molybdenum (Mo), and chromium ( It may be formed of an alloy of Cr), an alloy of nickel (Ni) and chromium, or the like.
  • the hole injection layer 109 has a function of injecting holes into the light emitting layer 113.
  • the hole injection layer 109 is formed of a metal oxide including a transition metal oxide such as tungsten oxide (WOx), molybdenum oxide (MoOx), molybdenum tungsten oxide (MoxWyOz), or the like.
  • WOx tungsten oxide
  • MoOx molybdenum oxide
  • MoxWyOz molybdenum tungsten oxide
  • the bank 111 has a function of partitioning adjacent subpixels.
  • the bank 111 is made of, for example, an organic material such as resin and has an insulating property. Examples of the organic material include an acrylic resin, a polyimide resin, and a novolac type phenol resin.
  • the bank 111 preferably has organic solvent resistance.
  • the bank 111 may be subjected to an etching process, a baking process, or the like, it is preferable that the bank 111 be formed of a highly resistant material that does not excessively deform or alter the process.
  • the light emitting layer 113 is an organic light emitting layer, for example, polymers such as polyfluorene, polyphenylene vinylene, polyacetylene, polyphenylene, polyparaphenylene ethylene, poly 3-hexylthiophene, and derivatives thereof are used.
  • Electron transport layer The electron transport layer 115 is, for example, a nitro-substituted fluorenone derivative, a thiopyrandioxide derivative, a diphequinone derivative, a perylenetetracarboxyl derivative, an anthraquinodimethane derivative, fluorenylidene described in JP-A-5-163488. It is formed of a methane derivative, anthrone derivative, oxadiazole derivative, perinone derivative, or quinoline complex derivative.
  • the material constituting the electron transport layer 115 is doped with an alkali metal or alkaline earth metal such as sodium (Na), barium (Ba), or potassium (K). In this embodiment, barium is doped.
  • Cathode The cathode 117 is an electrode for injecting electrons into the light emitting layer 113. In this embodiment, since it is a top emission type, the cathode 117 needs to transmit light emitted from the light emitting layer 113 and is formed of a transparent electrode such as ITO or IZO.
  • Sealing portion The sealing portion 119 has a function of suppressing the light emitting layer 113 and the like from being exposed to moisture or being exposed to air.
  • the first sealing layer 121 includes, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), silicon carbide (SiC), carbon-containing silicon oxide (SiOC), aluminum nitride (AlN), oxide It is made of a material such as aluminum (Al 2 O 3 ).
  • the second sealing layer 123 is formed of a material such as aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), aluminum nitride (AlN), or aluminum oxynitride (Al X O Y N Z ). . 4). Manufacturing Method The manufacturing process of the display panel 10 is illustrated.
  • 3 to 5 are diagrams showing an example of the manufacturing process of the display panel 10. 3 to 5, a part of the display panel 10 is extracted and schematically shown.
  • the display panel 10 includes (1) a step of forming an anode (anode formation step), (2) a step of forming a hole injection layer (hole injection layer formation step), and (3) a step of forming a bank (bank formation). Step), (4) Step of forming the light emitting layer (light emitting layer forming step), (5) Step of forming the electron transport layer (electron transport layer forming step), (6) Step of forming the cathode (cathode forming step) (7) Step of forming the first sealing layer (first sealing layer forming step), (8) Oxygen exposure step, (9) Step of forming the second sealing layer (second sealing layer forming step) ) And manufactured.
  • anode formation step anode formation step
  • second forming a hole injection layer hole injection layer formation step
  • bank bank formation
  • Step (4) Step of forming the light emitting layer (light emitting layer forming step), (5) Step of forming the electron transport layer (electron transport layer forming step), (6) Step of forming the cathode
  • a vacuum film forming method such as a sputtering method or a vacuum vapor deposition method can be used.
  • tungsten oxide film which is a metal oxide film, is formed on the upper surface of the TFT substrate 101 on which the anodes 107 are formed in a matrix using a composition containing, for example, tungsten oxide (WOx). A film is formed (see FIG. 3B).
  • the thickness of the hole injection layer 109 is, for example, 1 [nm] to 10 [nm].
  • a vacuum film formation method such as a sputtering method or a vacuum evaporation method is used. it can.
  • the bank material layer can be formed, for example, by coating.
  • a mask having an opening having a predetermined shape is overlaid on the bank material layer, and after exposing the mask from above, the excess bank material layer is washed out with a developer. Thereby, the patterning of the bank material layer is completed, and the bank 111 is completed (see FIG. 3C).
  • the height of the bank 111 from the upper surface of the hole injection layer 109 is, for example, 1 [ ⁇ m] to 2 [ ⁇ m].
  • a composition ink containing a light-emitting material is dropped into each region partitioned by the bank 111 by, for example, an inkjet method, and the composition ink is dried to form the light-emitting layer 113 (FIG. 4 (a)).
  • the thickness of the light emitting layer 113 is, for example, 10 [nm] to 100 [nm].
  • Electron Transport Layer Formation Step After the formation of the light emitting layer 113, a derivative layer made of, for example, a nitro-substituted fluorenone derivative is formed on the substrate 101 on which the light emitting layer 113 is formed.
  • a vacuum film formation method such as a sputtering method or a vacuum evaporation method can be used (see FIG. 4B).
  • barium (Ba) is doped by about 2 [wt%] to 30 [wt%].
  • the film thickness of the electron transport layer is, for example, 0.5 [nm] to 50 [nm].
  • a transparent metal film for example, an ITO film is formed to form the cathode 117.
  • a vacuum film forming method such as a sputtering method or a vacuum vapor deposition method can be used (see FIG. 4C).
  • the film thickness of the cathode 117 is, for example, 10 [nm] to 200 [nm].
  • a metal oxide film for example, a silicon oxide (SiO) film is formed to form the first sealing layer 121.
  • a vacuum film formation method such as a sputtering method or a vacuum vapor deposition film method can be used (see FIG. 5A).
  • the film thickness of the first sealing layer 121 is, for example, 5 [nm] to 200 [nm].
  • Oxygen exposure step The TFT substrate 103 on which the first sealing layer 121 is formed is exposed in an oxygen atmosphere.
  • Second sealing layer formation step After the oxygen exposure step, an aluminum oxide (Al 2 O 3 ) film is formed to form the second sealing layer 123.
  • the aluminum oxide film uses an atomic layer deposition (ALD) method in which constituent materials constituting the film are deposited in an atomic state.
  • TMA trimethylaluminum
  • O 2 plasma is used as an oxidizing agent. Used.
  • the film formation is performed by introducing TMA and removing excess molecules by purging (hereinafter, simply referred to as “purge”), O 2 plasma irradiation, and purging processing as one cycle and repeating several hundred times.
  • purging hereinafter, simply referred to as “purge”
  • the introduction of TMA, the O 2 plasma irradiation and the purge are performed for 100 [msec] to 20 [sec].
  • the film thickness of the second sealing layer 123 is, for example, 5 [nm] to 200 [nm]. 5.
  • FIG. 6 is a diagram showing a state in which foreign matter has adhered after forming the anode.
  • the portion immediately below the foreign material 130 in the anode 107 becomes a shadow of the foreign material 130, and the hole injection layer 109, the light emitting layer 113, and the electron transport layer 115.
  • the cathode 117 and the first sealing layer 121 are not deposited immediately below the foreign material 130 (see FIG. 7A).
  • a region on the upper surface of the anode 107 and immediately below the foreign material 130 corresponds to a “partial region of the lower functional layer” of the present invention.
  • the hole injection layer 109, the light emitting layer 113, the electron transport layer 115, the cathode 117, and the first sealing layer 121 are not formed in a portion corresponding to the foreign matter 130 on the anode 107, and an opening is formed in this portion. It will be.
  • the foreign material 130 and the hole injection layer 109, the light emitting layer 113, the electron transport layer 115, the cathode 117, and the first sealing formed around the foreign material 130 (a region located outside the portion immediately below the foreign material 130).
  • a groove 132 is formed between the layer 121.
  • a gas intrusion path such as moisture is formed along the groove 132.
  • the groove A gas such as moisture enters the functional layer such as the hole injection layer 109 from 132.
  • the foreign matter 130 has conductivity
  • the cathode 117 is not completely covered with a film having an insulating function (for example, the first sealing layer 121) or the like
  • the foreign matter 130 falls after the cathode 117 is formed.
  • the cathode 117 and the foreign material 130 come into contact with each other, the anode 107 and the cathode 117 are electrically connected to cause a short circuit.
  • the steps after the hole injection layer forming step are sequentially performed.
  • the anode 107 corresponds to the “layer from the conductive material in the lower functional layer” of the present invention, and the layer including the hole injection layer 109, the light emitting layer 113, the electron transport layer 115, and the cathode 117 is the present invention.
  • the electron transport layer 115 and the cathode 117 correspond to the “upper functional layer”, and correspond to the “layer made of a conductive material” of the upper functional layer of the present invention.
  • the anode forming step corresponds to the “first step” of the present invention, and the step comprising the hole injection layer forming step, the light emitting layer forming step, the electron transport layer forming step, and the cathode forming step is the “second step of the present invention.
  • the first sealing layer forming step corresponds to the “third step” of the present invention
  • the oxygen exposure step corresponds to the “fourth step” of the present invention
  • the second sealing layer forming step is the main step. This corresponds to the “fifth step” of the invention.
  • FIG. 7 is a diagram for explaining a state of a foreign matter adhesion portion during the manufacturing process.
  • (A) of the figure has shown the state which the 1st sealing layer formation process was complete
  • a hole injection layer 109 As shown in FIG. 5A, when a foreign substance 130 adheres to the anode 107, a hole injection layer 109, a light emitting layer 113, an electron transport layer 115, a cathode 117, and a first electrode that should be originally formed on the anode 107 are formed.
  • the sealing layer 121 is not formed on the anode 107 but is formed on the upper surface of the foreign material 130.
  • the hole injection layer 109, the light emitting layer 113, the electron transport layer 115, the cathode 117, and the first sealing layer 121 have a function related to light emission and a function of protecting a light emitting part.
  • each layer formed of the same material as the hole injection layer 109, the light emitting layer 113, the electron transport layer 115, the cathode 117, and the first sealing layer 121 (the “upper functional layer” in the present invention).
  • the layer of the same material and the same layer as the first sealing layer ”) do not have a function related to light emission or a function of protecting the light emitting part, so these layers are films for hole injection layers.
  • the foreign matter 130 (the hole injection layer film 109a, the light emitting layer film 113a, the electron transport layer film 115a, the cathode film 117a, and the first sealing layer formed on the foreign substance 130) And a hole injection layer 109, a light emitting layer 113, an electron transport layer 115, a cathode 117, and a first sealing layer 121 formed in the vicinity of the foreign matter.
  • an oxygen exposure process is performed.
  • the oxide film 134 is formed on the electron transport layer 115 and the cathode 117 exposed in the oxygen atmosphere, and the electron transport layer film 115a and the cathode film 117a.
  • the oxide film 134 is formed in the “portion exposed to the opening” in the present invention. This state is shown in FIG.
  • the exposure time in an oxidizing atmosphere is also the time required for an oxide film to be formed in a portion exposed to oxygen in the electron transport layer 115 and the cathode 117.
  • an oxide film is formed on a portion of the electron transport layer 115 and the cathode 117 that is not covered with the first sealing layer 12, and the insulation of the portion is ensured.
  • an oxide film such as ITO is used as the material of the cathode 117
  • an oxide film is not formed, but when a metal material or the like is used as the material of the cathode, it is oxidized.
  • Second sealing layer forming step In the second sealing layer forming step, as described above, the aluminum oxide film (123) is formed by the ALD method after the oxygen exposure step. This state is shown in FIG.
  • deposition can be performed for each atomic layer. For this reason, as shown in FIG. 7A, even if the groove 132 exists around the foreign material 130, the atoms enter and deposit inside the groove 132 (bottom).
  • the hole injection layer 109, the light emitting layer 113, the electron transport layer 115, the cathode 117, and the first sealing layer 121 are not formed on the anode 107 and immediately below the foreign material 130, and a part of the anode 107 is formed.
  • the second sealing layer 123 is also formed on the exposed portion, and the exposed portion is sealed (covered) with the second sealing layer 123.
  • the second sealing layer 123 is formed thinner than the first sealing layer 121, but is deposited in units of atoms, so that a dense film can be obtained (so-called pinhole free). As a result, high sealing performance can be obtained.
  • the second sealing layer 123 is deposited up to the inside (bottom) of the groove 132 generated by the attachment.
  • the anode 107, the hole injection layer 109, the electron transport layer 115, the cathode 117, and the first sealing layer 121 are not exposed to a gas such as moisture, and the gas enters these layers. Can be prevented.
  • the hole injection layer 109, the light emitting layer 113, the electron transport layer 115, and the cathode 117 are exposed to the surface and oxidized into a layer made of a conductive material. Since the film 134 is formed, as a result, the insulating properties of the electron transport layer 115 and the cathode 117 are ensured.
  • the second sealing layer 123 is formed on the oxide film 134, intrusion of gas such as moisture into the oxide film 134 can be prevented.
  • the oxide film 134 is formed so that the anode 107 and the cathode 117 are short-circuited. There is nothing wrong. 6).
  • foreign matter adheres on the electron transport layer As described above, it is difficult to make foreign matter into the display panel zero during manufacturing.
  • FIG. 8 is a diagram showing a case where foreign matter adheres to the upper surface of the electron transport layer.
  • the sealing layer is only a layer formed by the CVD method, it becomes a shadow of the foreign matter 140, and the cathode 117 and the sealing layer (first sealing layer 121) are foreign matter. It is not deposited directly under 140.
  • a region on the upper surface of the electron transport layer 115 and immediately below the foreign material 140 corresponds to a “partial region of the lower functional layer” of the present invention.
  • the cathode 117 and the first sealing layer 121 are not formed, and this portion has an opening.
  • a groove 142 is formed between the foreign material 140 and the cathode 117 and the first sealing layer 121 formed around the foreign material 140 (a region located outside the portion immediately below the foreign material 140).
  • an intrusion path for a gas such as moisture is formed along the groove 142 as described above.
  • a resin material for bonding to a glass substrate is applied.
  • the gas may enter the functional layer such as the cathode 109 from the groove 142 and cause a display defect of the panel.
  • the steps after the cathode forming step are sequentially performed.
  • the layer composed of the anode 107, the hole injection layer 109, the light emitting layer 113, and the electron transport layer 115 corresponds to the “lower functional layer” of the present invention, and the electron transport layer 115 corresponds to the lower function of the present invention.
  • the cathode 117 corresponds to the “upper functional layer” of the present invention and the “functional layer” of the upper functional layer of the present invention.
  • the step comprising the anode forming step, hole injection layer forming step, light emitting layer forming step, and electron transport layer forming step corresponds to the “first step” of the present invention
  • the cathode forming step is the “second step of the present invention.
  • the first sealing layer forming step corresponds to the “third step” of the present invention
  • the oxygen exposure step corresponds to the “fourth step” of the present invention
  • the second sealing layer forming step is the main step. This corresponds to the “fifth step” of the invention.
  • FIG. 9 is a diagram for explaining a state of a foreign matter adhesion portion during the manufacturing process.
  • (1) Up to the first sealing layer forming step Each forming step is performed on the display panel 10 with the foreign matter 140 attached.
  • (A) of the figure has shown the state which the 1st sealing layer formation process was complete
  • the cathode 117 and the first sealing layer 121 that should be originally formed on the electron transport layer 115 are formed on the electron transport layer 115. It is formed on the upper surface of the foreign material 140 without being formed.
  • each layer formed on the foreign material 140 that is, each layer formed of the same material as the cathode 117 and the first sealing layer 121 (the layer of the same material as the upper functional layer and the first sealing of the present invention).
  • the same layer as the layer corresponds to “the same layer as the layer”
  • these layers are referred to as a cathode film 117b and a first sealing layer film 121b.
  • the foreign matter 140 (including the cathode film 117b and the first sealing layer film 121b formed on the foreign matter 140), the cathode 117 formed around the foreign matter, and the first A groove 142 exists between the sealing layer 121 and the sealing layer 121.
  • Oxygen exposure process An oxygen exposure process is performed after a 1st sealing layer formation process. As a result, the oxidized portion 144 is formed in the electron transport layer 115 and the cathode 117 (which are made of an oxidizable material) exposed in the oxygen atmosphere.
  • the electron transport layer 115 contains doped barium (Ba)
  • the electron transport layer 115 is easily oxidized, and the adhesion surface with the foreign material 140 is also oxidized. Note that the foreign matter 142 is fixed to the electron transport layer 115 when the attached surface is also oxidized.
  • the oxide film 144 is also formed on the cathode 117 in a portion facing the groove 142 (a portion serving as a peripheral surface constituting the groove 142 (opening)).
  • Second sealing layer forming step In the second sealing layer forming step, an aluminum oxide film (123) is formed by the ALD method after the oxygen exposure step. This state is shown in FIG.
  • deposition can be performed for each atomic layer. For this reason, as shown in FIG. 9A, even if the groove 142 exists around the foreign material 140, atoms enter and deposit inside the groove 142 (inside).
  • the cathode 117 and the first sealing layer 121 are not formed on the electron transport layer 115 and immediately below the foreign material 140, and a part of the electron transport layer 115 is exposed.
  • the second sealing layer 123 is also formed on the portion, and the exposed portion is sealed with the second sealing layer 123.
  • the second sealing layer 123 is deposited up to the groove 142 generated by the adhesion, In the subsequent steps, it is possible to prevent gas such as moisture from entering the cathode 117 and the first sealing layer 121.
  • the oxide film 144 is formed on the exposed portions of the electron transport layer 115 and the cathode 117 on the surface. Will be secured.
  • the second sealing layer 123 is formed on the oxide film 144, the first sealing layer 121, the foreign material 140, the cathode film 117b deposited on the foreign material 140, and the first sealing layer film 121b. Therefore, the second sealing layer 123 can be filled into the groove 142 and the foreign matter 140 can be completely insulated. By this. Intrusion of gas such as moisture into the oxide film 144 can be prevented.
  • the foreign matter 140 when the foreign matter 140 has conductivity, the foreign matter 140 is fixed to the electron transport layer 115 due to oxidation of the electron transport layer 115, and the foreign matter 140 is scattered and attached to other parts in another process. It is possible to prevent the occurrence of defects and the like. 7).
  • the foreign matter 130 comes off after the foreign matter 130 adheres on the anode 107
  • the case where the foreign matter 130 adheres on the anode 107 has been described. However, after the foreign matter adheres, the foreign matter 130 comes off from the anode 107 for some reason. Sometimes.
  • the timing at which the foreign matter 130 is removed is during the formation of the second sealing layer 123.
  • FIG. 10 is a diagram for explaining a state of a foreign matter adhering portion during the manufacturing process.
  • an aluminum oxide film (metal oxide film) is formed by the ALD method. During this film formation, the foreign matter 130 is detached from the anode 107. This state is shown in FIG.
  • an aluminum oxide film (123) is deposited on the anode 107 by the ALD method, and the second sealing layer 123 is formed by performing a predetermined number of cycles.
  • the second sealing layer 123 is formed in the region on the anode 107 where the foreign matter 130 has adhered, as the foreign matter 130 disappears. This state is shown in FIG.
  • the portion of the second sealing layer 123 where the foreign matter 130 was present is different from the portion where the foreign matter 130 was not present in the layer structure (specifically, the film thickness). The portion is completely exposed without being exposed, and the insulation of the anode 107 is ensured.
  • One pixel may be composed of one color (monochrome) subpixel, or one pixel may be composed of, for example, four or more subpixels having different emission colors.
  • the material etc. which comprise a light emitting layer differ if light emission colors differ, the basic composition that a light emitting layer is pinched
  • the hole injection layer 109 is formed on the surface of the anode 107.
  • a conductive layer is formed on the surface of the anode 107, and the upper surface of the conductive layer and the conductive layer are formed.
  • the hole injection layer 109 may be formed on the upper surface of the substrate 101 that is not formed.
  • the conductive layer functions as a protective layer that prevents the anode 107 from being naturally oxidized during the manufacturing process.
  • (3) Light-Emitting Layer Although the light-emitting layer 113 is formed on the upper surface of the hole injection layer 109, for example, a hole transport layer may be provided between the light-emitting layer 113 and the hole injection layer 109. The hole transport layer has a function of transporting holes injected from the hole injection layer 109 to the light emitting layer 113.
  • the hole transporting layer includes, for example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcones described in JP-A-5-163488.
  • the cathode 117 is formed on the upper surface of the electron transport layer 115.
  • an electron injection layer may be formed between the electron transport layer 115 and the cathode 117. Examples of the electron injection layer include alkali metals, alkaline earth metals, oxides thereof, and fluorides.
  • the second sealing layer 123 is formed on the top surface of the first sealing layer 121.
  • a third sealing layer is formed on the top surface of the second sealing layer 123. It may be formed.
  • the third sealing layer may be formed by the same material and molding method as the first sealing layer 121, or may be formed by another method, for example, a chemical vapor deposition (CVD) method. You may do it.
  • CVD chemical vapor deposition
  • the second sealing layer using the ALD method is formed on the first sealing layer.
  • the oxidation exposure step is performed after the light emitting portion forming step.
  • Second Sealing Layer is formed by an electronic layer deposition method (ADL method).
  • ADL method electronic layer deposition method
  • TMA trimethylaluminum
  • TMA trimethylaluminum
  • alkyl-based metals such as TEA (triethylaluminum) and DMAH (dimethylaluminum hydride) can be used.
  • TEA triethylaluminum
  • DMAH dimethylaluminum hydride
  • Other materials include silicon oxide (SiO 2 ), aluminum nitride (AlN), oxynitrogen compound (Al X O Y N Z ), and the like.
  • SiO 2 silicon oxide
  • AlN aluminum nitride
  • Al X O Y N Z oxynitrogen compound
  • an acid nitrogen compound (Al X O Y N Z) it is carried out by reacting TMA, TEA, a DMAH and nitrogen compounds.
  • ALE method atomic layer growth method
  • Oxygen exposure step In the oxygen exposure step, the substrate 101 on which the first sealing layer 121 is formed is exposed to an oxygen atmosphere, but the electrons exposed on the surface after the first sealing layer 121 is formed. Other methods may be used as long as the transport layer 115 and the cathode 117 can be oxidized.
  • the oxygen atmosphere only needs to be oxidized and may contain other gases (nitrogen, argon, etc.).
  • the oxidation exposure step may be performed after the light emitting portion forming step, for example, as long as the layer made of the conductive material exposed on the surface after forming the light emitting portion can be oxidized. Specifically, it may be performed before the first sealing portion 121 is formed. 3. Others (1) Functional Layer In the embodiment, the first function and the upper functional layer are described with reference to a layer to which foreign matter adheres. This is because the generation of a partial region of the lower functional layer occurs without the functional layer being deposited due to adhesion of foreign matter.
  • the lowermost layer of the functional layer that has not been deposited becomes the lowermost layer of the upper functional layer, and the layer immediately below the lowermost layer of the functional layer that has not been deposited. Is the uppermost layer of the lower functional layer.
  • the layer having the surface exposed to the opening of the functional layer that is not deposited is the uppermost layer of the lower functional layer.
  • the uppermost layer of the lower functional layer is the anode 107 and the electron transport layer 117, but it is sufficient that the upper functional layer has at least one layer made of a conductive material.
  • the uppermost layer of the functional layer may be, for example, the hole injection layer 109. Although not described in the embodiment, for example, when a hole transport layer or an electron injection layer is provided, these may be the uppermost layer of the lower functional layer.
  • the present invention can be used for a display device.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un élément électroluminescent pourvu d'une unité électroluminescente, formé par stratification de multiples couches fonctionnelles, et d'une unité d'étanchéité isolante formée sur l'unité électroluminescente. Les couches fonctionnelles comportent une couche fonctionnelle inférieure comprenant une couche de matériau conducteur comme couche supérieure, et une couche fonctionnelle supérieure formée sur la couche fonctionnelle inférieure dans un état dans lequel une ouverture est présente dans la partie correspondant à une zone partielle de la couche fonctionnelle inférieure. L'unité d'étanchéité comprend une première couche d'étanchéité formée sur la couche fonctionnelle supérieure mais non sur la surface périphérique constituant l'ouverture dans la couche fonctionnelle supérieure, et une seconde couche d'étanchéité formée sur la première couche d'étanchéité dans des unités de couche atomique. La couche fonctionnelle supérieure présente une ou plusieurs couches de matériau conducteur. La partie de la couche de matériau conducteur exposée par l'ouverture est oxydée, et la partie oxydée est recouverte par la couche fonctionnelle supérieure.
PCT/JP2011/005655 2011-10-07 2011-10-07 Élément électroluminescent et procédé de fabrication d'un élément électroluminescent Ceased WO2013051070A1 (fr)

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CN107768542A (zh) * 2017-03-21 2018-03-06 机光科技股份有限公司 有机发光装置
JP2018116924A (ja) * 2016-08-10 2018-07-26 株式会社半導体エネルギー研究所 表示装置及びその作製方法
CN112614959A (zh) * 2020-12-16 2021-04-06 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN113809263A (zh) * 2021-08-25 2021-12-17 惠州华星光电显示有限公司 一种显示面板及显示面板的制作方法
CN119947447A (zh) * 2025-01-15 2025-05-06 Tcl华星光电技术有限公司 显示面板及显示终端

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JP2009081093A (ja) * 2007-09-27 2009-04-16 Sony Corp 発光装置の製造方法

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JP2001284042A (ja) * 2000-03-31 2001-10-12 Denso Corp 有機ｅｌ素子
JP2003173873A (ja) * 2001-12-06 2003-06-20 Denso Corp 有機ｅｌ素子の製造方法
JP2009081093A (ja) * 2007-09-27 2009-04-16 Sony Corp 発光装置の製造方法

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JP2018116924A (ja) * 2016-08-10 2018-07-26 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP2023166530A (ja) * 2016-08-10 2023-11-21 株式会社半導体エネルギー研究所 表示装置及び表示装置の作製方法
JP2025038003A (ja) * 2016-08-10 2025-03-18 株式会社半導体エネルギー研究所 表示装置の作製方法
CN107768542A (zh) * 2017-03-21 2018-03-06 机光科技股份有限公司 有机发光装置
CN107768542B (zh) * 2017-03-21 2019-10-22 机光科技股份有限公司 有机发光装置
CN112614959A (zh) * 2020-12-16 2021-04-06 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN113809263A (zh) * 2021-08-25 2021-12-17 惠州华星光电显示有限公司 一种显示面板及显示面板的制作方法
CN119947447A (zh) * 2025-01-15 2025-05-06 Tcl华星光电技术有限公司 显示面板及显示终端

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