[go: up one dir, main page]

WO2012121067A8 - ナノギャップ長を有する電極構造の作製方法並びにそれにより得られるナノギャップ長を有する電極構造及びナノデバイス - Google Patents

ナノギャップ長を有する電極構造の作製方法並びにそれにより得られるナノギャップ長を有する電極構造及びナノデバイス Download PDF

Info

Publication number
WO2012121067A8
WO2012121067A8 PCT/JP2012/055002 JP2012055002W WO2012121067A8 WO 2012121067 A8 WO2012121067 A8 WO 2012121067A8 JP 2012055002 W JP2012055002 W JP 2012055002W WO 2012121067 A8 WO2012121067 A8 WO 2012121067A8
Authority
WO
WIPO (PCT)
Prior art keywords
electrode structure
nanogap
nanodevice
metal
nanogap length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/055002
Other languages
English (en)
French (fr)
Other versions
WO2012121067A1 (ja
Inventor
真島　豊
寺西　利治
太郎 村木
田中　大介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
University of Tsukuba NUC
Original Assignee
Japan Science and Technology Agency
University of Tsukuba NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency, University of Tsukuba NUC filed Critical Japan Science and Technology Agency
Priority to CN201280012185.7A priority Critical patent/CN103563052B/zh
Priority to US14/003,679 priority patent/US20140054788A1/en
Priority to KR1020137026296A priority patent/KR101572228B1/ko
Priority to JP2013503464A priority patent/JP5942297B2/ja
Publication of WO2012121067A1 publication Critical patent/WO2012121067A1/ja
Publication of WO2012121067A8 publication Critical patent/WO2012121067A8/ja
Anticipated expiration legal-status Critical
Priority to US15/069,879 priority patent/US20160300915A1/en
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/161—Process or apparatus coating on selected surface areas by direct patterning from plating step, e.g. inkjet
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C23C18/44—Coating with noble metals using reducing agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/205—Nanosized electrodes, e.g. nanowire electrodes
    • H10P10/00—
    • H10P14/46—
    • H10W20/031—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

金属層２Ａ，２Ｂが対にギャップを有して配置されている基板１を、金属イオンを含む電解液に還元剤及び界面活性剤を混合した無電解メッキ液に浸漬する。還元剤により金属イオンが還元されて金属が金属層２Ａ，２Ｂに析出しつつ界面活性剤が金属の表面に付着してギャップの長さをナノメートルサイズに制御した電極４Ａ、４Ｂの対を形成する。これにより、ギャップ長のバラツキを制御可能なナノギャップ長を有する電極構造の作製方法とこの作製方法を用いてギャップ長のバラツキを抑えたナノギャップ長を有する電極構造及びそれを備えたナノデバイスを提供する。
PCT/JP2012/055002 2011-03-08 2012-02-28 ナノギャップ長を有する電極構造の作製方法並びにそれにより得られるナノギャップ長を有する電極構造及びナノデバイス Ceased WO2012121067A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201280012185.7A CN103563052B (zh) 2011-03-08 2012-02-28 具有纳米间隙长度的电极结构的制作方法、通过该方法得到的具有纳米间隙长度的电极结构和纳米器件
US14/003,679 US20140054788A1 (en) 2011-03-08 2012-02-28 Method for fabricating nanogap electrodes, nanogap electrodes array, and nanodevice with the same
KR1020137026296A KR101572228B1 (ko) 2011-03-08 2012-02-28 나노 갭 길이를 가지는 전극 구조의 제작 방법 및 그것에 의해 얻어지는 나노 갭 길이를 가지는 전극 구조, 및 나노 디바이스
JP2013503464A JP5942297B2 (ja) 2011-03-08 2012-02-28 ナノギャップ長を有する電極構造の作製方法、メッキ液及びナノデバイス
US15/069,879 US20160300915A1 (en) 2011-03-08 2016-03-14 Method for fabricating nanogap electrodes, nanogap electrodes array, and nanodevice with the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-050894 2011-03-08
JP2011050894 2011-03-08

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/003,679 A-371-Of-International US20140054788A1 (en) 2011-03-08 2012-02-28 Method for fabricating nanogap electrodes, nanogap electrodes array, and nanodevice with the same
US15/069,879 Division US20160300915A1 (en) 2011-03-08 2016-03-14 Method for fabricating nanogap electrodes, nanogap electrodes array, and nanodevice with the same

Publications (2)

Publication Number Publication Date
WO2012121067A1 WO2012121067A1 (ja) 2012-09-13
WO2012121067A8 true WO2012121067A8 (ja) 2013-01-03

Family

ID=46798035

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/055002 Ceased WO2012121067A1 (ja) 2011-03-08 2012-02-28 ナノギャップ長を有する電極構造の作製方法並びにそれにより得られるナノギャップ長を有する電極構造及びナノデバイス

Country Status (5)

Country Link
US (2) US20140054788A1 (ja)
JP (1) JP5942297B2 (ja)
KR (1) KR101572228B1 (ja)
CN (2) CN103563052B (ja)
WO (1) WO2012121067A1 (ja)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102123955B1 (ko) * 2013-03-09 2020-06-17 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 전자 소자
JP6352243B2 (ja) * 2013-03-09 2018-07-04 国立研究開発法人科学技術振興機構 論理演算素子
CN105474398B (zh) * 2013-09-06 2018-11-13 国立研究开发法人科学技术振兴机构 电极对、其制作方法、器件用基板以及器件
US20150179738A1 (en) * 2013-12-19 2015-06-25 Sk Innovation Co., Ltd. Flexible nano structure
KR102192973B1 (ko) * 2013-12-19 2020-12-18 에스케이이노베이션 주식회사 나노 구조체를 갖는 센서 및 그 제조 방법
KR20150072292A (ko) * 2013-12-19 2015-06-29 에스케이이노베이션 주식회사 플렉시블 기반 나노 구조체를 갖는 센서 및 그 제조 방법
US9725313B2 (en) * 2013-12-19 2017-08-08 Sk Innovation Co., Ltd. Method for fabricating NANO structure including dielectric particle supporters
US20150174613A1 (en) * 2013-12-19 2015-06-25 Sk Innovation Co., Ltd. Method for fabricating flexible nano structure
US9324628B2 (en) 2014-02-25 2016-04-26 International Business Machines Corporation Integrated circuit heat dissipation using nanostructures
WO2016031836A1 (ja) 2014-08-29 2016-03-03 国立研究開発法人科学技術振興機構 ナノデバイス
KR102796872B1 (ko) * 2016-01-28 2025-04-15 로스웰 엠이 아이엔씨. 대규모 분자 전자소자 센서 어레이들을 이용하여 분석물들을 측정하는 방법들 및 장치
KR20250022239A (ko) 2016-01-28 2025-02-14 로스웰 엠이 아이엔씨. 대량 병렬 ｄｎａ 시퀀싱 장치
WO2017139493A2 (en) 2016-02-09 2017-08-17 Roswell Biotechnologies, Inc. Electronic label-free dna and genome sequencing
US10484590B2 (en) * 2016-03-04 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device
KR102601324B1 (ko) 2017-01-19 2023-11-10 로스웰 바이오테크놀로지스 인코포레이티드 2차원 레이어 재료를 포함하는 솔리드 스테이트 시퀀싱 디바이스들
US10475793B2 (en) * 2017-04-24 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor cell and structure thereof
US10508296B2 (en) 2017-04-25 2019-12-17 Roswell Biotechnologies, Inc. Enzymatic circuits for molecular sensors
CN110546276A (zh) 2017-04-25 2019-12-06 罗斯威尔生命技术公司 用于分子传感器的酶电路
CN110651182B (zh) 2017-05-09 2022-12-30 罗斯威尔生命技术公司 用于分子传感器的结合探针电路
CN111373049A (zh) 2017-08-30 2020-07-03 罗斯威尔生命技术公司 用于dna数据存储的进行性酶分子电子传感器
US11100404B2 (en) 2017-10-10 2021-08-24 Roswell Biotechnologies, Inc. Methods, apparatus and systems for amplification-free DNA data storage
KR101948072B1 (ko) * 2018-01-29 2019-02-14 주식회사 페타룩스 전자소자 제조방법
TWI772618B (zh) * 2018-03-02 2022-08-01 國立研究開發法人科學技術振興機構 奈米縫隙電極及其製作方法以及具有奈米縫隙電極的奈米裝置
US10590541B2 (en) * 2018-06-15 2020-03-17 Rohm And Haas Electronic Materials Llc Electroless copper plating compositions and methods for electroless plating copper on substrates
EP3862463A4 (en) 2018-10-02 2022-06-01 Japan Science and Technology Agency HETEROEPITACTIC STRUCTURE AND METHOD FOR PRODUCTION THEREOF, METAL LAYERING PRODUCT HAVING HETEROEPITATIC STRUCTURE AND METHOD FOR PRODUCTION THEREOF, NANOGAP ELECTRODE AND METHOD FOR PRODUCTION OF NANOGAP ELECTRODE
JP7228411B2 (ja) * 2019-03-06 2023-02-24 上村工業株式会社 無電解金めっき浴
KR20210150549A (ko) 2019-04-12 2021-12-10 로스웰 바이오테크놀로지스 인코포레이티드 분자 전자 센서를 위한 다환 방향족 브릿지
US12146852B2 (en) 2019-09-06 2024-11-19 Roswell Biotechnologies, Inc. Methods of fabricating nanoscale structures usable in molecular sensors and other devices
CN111893527A (zh) * 2020-08-04 2020-11-06 淮南师范学院 纳米电极对及其制备方法
CN115132578B (zh) * 2022-09-01 2022-12-30 中国科学技术大学 一种具有纳米间隙的电极对及其制备方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3684572A (en) * 1970-07-13 1972-08-15 Du Pont Electroless nickel plating process for nonconductors
CN87100440B (zh) * 1987-01-27 1988-05-11 中国人民解放军装甲兵工程学院 在不导电材料上刷镀铜的方法
JP2819180B2 (ja) * 1990-02-22 1998-10-30 信康 土肥 すず―鉛―ビスマス合金めっき浴
US5282953A (en) * 1993-06-28 1994-02-01 Technic Incorporated Polyoxyalklene compounds terminated with ketone groups for use as surfactants in alkanesulfonic acid based solder plating baths
EP0865078A1 (en) * 1997-03-13 1998-09-16 Hitachi Europe Limited Method of depositing nanometre scale particles
JP4932094B2 (ja) * 2001-07-02 2012-05-16 日本リーロナール有限会社 無電解金めっき液および無電解金めっき方法
WO2003020946A2 (en) * 2001-08-14 2003-03-13 The Penn State Research Foundation Fabrication of molecular scale devices using fluidic assembly
GB0130485D0 (en) * 2001-12-21 2002-02-06 Plastic Logic Ltd Self-aligned printing
BR0309605A (pt) * 2002-04-25 2005-02-15 Gen Electric Preparação de compostos de cobre (i) de nano tamanho
US7166152B2 (en) * 2002-08-23 2007-01-23 Daiwa Fine Chemicals Co., Ltd. Pretreatment solution for providing catalyst for electroless plating, pretreatment method using the solution, and electroless plated film and/or plated object produced by use of the method
CN100503093C (zh) * 2003-09-05 2009-06-24 三菱麻铁里亚尔株式会社 金属微粒、含有该微粒的组合物及金属微粒的制造方法
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US7312155B2 (en) * 2004-04-07 2007-12-25 Intel Corporation Forming self-aligned nano-electrodes
WO2006137891A2 (en) * 2004-09-29 2006-12-28 University Of Florida Research Foundation, Inc. Membrane with nanochannels for detection of molecules
KR100679704B1 (ko) * 2005-01-10 2007-02-06 한국과학기술원 분자소자와 바이오 센서를 위한 나노갭 또는 나노 전계효과 트랜지스터 제작방법
JP4434023B2 (ja) * 2005-01-25 2010-03-17 セイコーエプソン株式会社 電子放出素子、電子放出素子の製造方法、及び電気光学装置、並びに電子機器
US7833904B2 (en) * 2005-06-16 2010-11-16 The Trustees Of Columbia University In The City Of New York Methods for fabricating nanoscale electrodes and uses thereof
US7655566B2 (en) * 2005-07-27 2010-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4054881B2 (ja) * 2006-02-06 2008-03-05 松下電器産業株式会社 単電子半導体素子の製造方法
KR100762258B1 (ko) * 2006-05-02 2007-10-01 한국표준과학연구원 나노갭 전극의 제조방법 및 이를 이용하여 제조된 나노갭소자
JP4379450B2 (ja) * 2006-08-22 2009-12-09 ソニー株式会社 電子デバイス及びその製造方法
JP5141943B2 (ja) * 2006-12-13 2013-02-13 独立行政法人科学技術振興機構 分子素子
JP2008192712A (ja) * 2007-02-01 2008-08-21 Japan Science & Technology Agency トンネル磁気抵抗素子
US8298620B2 (en) * 2008-05-13 2012-10-30 North Carolina Agricultural And Technical State University Methods of preparing thin films by electroless plating
JP5622360B2 (ja) * 2009-01-16 2014-11-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 電気錫めっき液および電気錫めっき方法
JP5455415B2 (ja) * 2009-04-10 2014-03-26 株式会社船井電機新応用技術研究所 ナノギャップ電極を有する素子の製造方法
KR101278393B1 (ko) * 2010-11-01 2013-06-24 삼성전기주식회사 파워 패키지 모듈 및 그의 제조방법

Also Published As

Publication number Publication date
WO2012121067A1 (ja) 2012-09-13
JP5942297B2 (ja) 2016-06-29
US20140054788A1 (en) 2014-02-27
KR20130135336A (ko) 2013-12-10
JPWO2012121067A1 (ja) 2014-07-17
CN106206685A (zh) 2016-12-07
KR101572228B1 (ko) 2015-11-26
US20160300915A1 (en) 2016-10-13
CN103563052A (zh) 2014-02-05
CN106206685B (zh) 2019-12-24
CN103563052B (zh) 2016-08-17

Similar Documents

Publication Publication Date Title
WO2012121067A8 (ja) ナノギャップ長を有する電極構造の作製方法並びにそれにより得られるナノギャップ長を有する電極構造及びナノデバイス
TW200636834A (en) Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow
EP2586893A3 (en) Copper plating bath and method
GB201217909D0 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
GB201305214D0 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
WO2014156310A8 (ja) 金属被膜の成膜装置および成膜方法
WO2011112042A3 (ko) 유기고분자-규소 복합체 입자 및 그 제조방법과 이를 포함하는 음극 및 리튬 이차전지
EP2562294A3 (en) Plating bath and method
WO2009126204A8 (en) High aspect ratio openings
TW200940743A (en) Copper conductive film and fabricating method thereof, conductive substrate and fabricating method thereof, copper conductive wire and fabricating method thereof and treatinh solution
FR2885913B1 (fr) Element composite comprenant un substrat conducteur et un revetement metallique nanostructure.
WO2013016447A3 (en) Catalysts for low temperature electrolytic co2 reduction
FR2963936B1 (fr) Procede de fabrication d'un article electrochrome
WO2011049804A3 (en) Method of forming an array of high aspect ratio semiconductor nanostructures
WO2013009457A3 (en) Methods to fabricate variations in porosity of lithium ion battery electrode films
WO2012004137A3 (en) Method to form solder deposits on substrates
WO2007118875A3 (de) Vorrichtung und verfahren zur galvanischen beschichtung
GB201122315D0 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
WO2009112714A3 (fr) Procede de fabrication d'une electrode a base de silicium, electrode a base de silicium et batterie au lithium comprenant une telle electrode
JP2012517690A5 (ja)
WO2009137694A3 (en) Controlled electrodeposition of nanoparticles
TW200702498A (en) Method for electrodeposition of bronzes
WO2012110875A3 (en) Method of producing displacement plating precursor
WO2010034304A3 (de) Organisches elektronisches bauelement und verfahren zu dessen herstellung
WO2015102701A3 (en) Formation of solid oxide fuel cells

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12755284

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2013503464

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20137026296

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 14003679

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 12755284

Country of ref document: EP

Kind code of ref document: A1