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WO2012014543A1 - Panneau détecteur de rayonnement - Google Patents

Panneau détecteur de rayonnement Download PDF

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Publication number
WO2012014543A1
WO2012014543A1 PCT/JP2011/059950 JP2011059950W WO2012014543A1 WO 2012014543 A1 WO2012014543 A1 WO 2012014543A1 JP 2011059950 W JP2011059950 W JP 2011059950W WO 2012014543 A1 WO2012014543 A1 WO 2012014543A1
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WO
WIPO (PCT)
Prior art keywords
radiation
unit
light
detection unit
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/059950
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English (en)
Japanese (ja)
Inventor
直人 岩切
晴康 中津川
直行 西納
恭義 大田
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Fujifilm Corp
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Fujifilm Corp
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Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of WO2012014543A1 publication Critical patent/WO2012014543A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
    • A61B6/4208—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
    • A61B6/4225—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector using image intensifiers
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
    • A61B6/4283—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by a detector unit being housed in a cassette
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/44—Constructional features of apparatus for radiation diagnosis
    • A61B6/4429—Constructional features of apparatus for radiation diagnosis related to the mounting of source units and detector units
    • A61B6/4464—Constructional features of apparatus for radiation diagnosis related to the mounting of source units and detector units the source unit or the detector unit being mounted to ceiling

Definitions

  • the present invention relates to a radiation detection panel, and more particularly to a radiation detection panel including a light emitting unit that absorbs radiation transmitted through a subject and emits light, and a detection unit that detects light emitted from the light emitting unit as an image.
  • the radiation sensitive layer for example, irradiated radiation is once converted into light by a scintillator (phosphor layer) such as CsI: Tl, GOS (Gd 2 O 2 S: Tb), and emitted from the scintillator.
  • a scintillator phosphor layer
  • CsI Tl
  • GOS Gd 2 O 2 S: Tb
  • a configuration in which light is reconverted into an electric charge and stored by a photodetection unit such as a PD (Photodiode).
  • a PD Photodiode
  • the radiation detection panel is excellent in portability, so the subject can be photographed while it is placed on a stretcher or bed, and the position of the radiation detection panel can be easily adjusted, so the imaging part cannot be moved. It is possible to flexibly cope with shooting of the subject.
  • the imaging start timing (timing at which radiation irradiation to the radiation detection panel is started) is detected, and a photoelectric sensor such as a PD is detected.
  • a photoelectric sensor such as a PD
  • After resetting unnecessary charges accumulated over time due to dark current of the conversion element for example, current generated by re-emission of charges once trapped in the impurity level of amorphous silicon), It is necessary to start shooting (charge accumulation).
  • the detection of the imaging start timing (or imaging end timing) by the radiation detection panel is performed by connecting the radiation source and the radiation detection panel to a signal line so that the radiation detection panel notifies the imaging start timing (or imaging end timing).
  • the radiation detection panel is connected to the radiation source with a signal line.
  • the handling of the radiation detection panel deteriorates, so the radiation detection panel itself can be irradiated with radiation. It is desirable to mount the function of detecting in the radiation detection panel.
  • Patent Document 1 discloses a conversion unit that converts radiation emitted from a radiation source into an electrical signal, a storage unit that accumulates the converted electrical signal, In accordance with the detection result of the radiation detection element and the radiation detection element for detecting the start and end of radiation emission of the radiation source in the radiation imaging apparatus provided with the solid-state imaging device having a reading unit for reading the accumulated electrical signal There has been disclosed a technology that realizes omission of wiring between a radiation source and a radiation imaging apparatus by providing a control unit that controls a drive circuit that drives an accumulation unit or a reading unit.
  • Patent Document 2 a dosimeter made of a sensor matrix (photosensitive) is arranged on the opposite side of the sensor matrix for detecting light emitted from the scintillator as an image with the scintillator interposed therebetween.
  • An X-ray apparatus having a configuration in which a detection element) is provided and a semi-transmissive reflector is provided on the light incident side of the dosimeter is disclosed.
  • Patent Document 3 discloses a phosphor film that emits light by absorbing radiation transmitted through a subject, an upper electrode, a lower electrode, and an upper electrode and a lower electrode.
  • the radiation imaging element having a configuration in which a photoelectric conversion film including a photoelectric conversion unit and a field effect thin film transistor, and a signal output unit that outputs a signal corresponding to the charge generated by the photoelectric conversion unit are sequentially stacked on the substrate.
  • the photoelectric conversion part is composed of an organic photoelectric conversion material that absorbs light emitted from a phosphor film.
  • the radiation detection panel when the radiation detection panel is equipped with a function to detect when radiation irradiation starts (or when irradiation ends), radiation applied to the radiation detection panel
  • a radiation detection element that detects radiation applied to a radiation detection panel such as a radiation detection element described in Patent Document 1 or a photosensitive detection element described in Patent Document 2. It is necessary to provide a new part.
  • the radiation detection panel also has a function to detect the amount of radiation irradiated to the radiation detection panel (and its integrated value) for the purpose of limiting the cumulative amount of radiation applied to the subject. Even when there is a need and it is going to satisfy such a need, it is necessary to newly provide the above-mentioned radiation detection part in a radiation detection panel.
  • the present invention has been made in consideration of the above-mentioned facts.
  • a configuration provided with a function of detecting irradiated radiation has an increased panel size and thickness. It is an object to obtain a radiation detection panel realized without causing a significant increase and a decrease in image detection sensitivity.
  • a radiation detection panel includes a light-emitting unit that emits light by absorbing radiation that has passed through a subject, and a light-emitting unit that detects light emitted from the light-emitting unit as an image.
  • the partial reflection is arranged between the first detection unit and the second detection unit and reflects a part of the light incident from the light emitting unit side to the light emitting unit side. Are stacked along the direction of arrival of radiation.
  • the first detection unit in addition to the light emitting unit that emits light by absorbing the radiation that has passed through the subject, and the first detection unit that detects the light emitted from the light emitting unit as an image, it has flexibility.
  • the second detection unit that is formed on the support and detects the light emitted from the light emitting unit by the organic photoelectric conversion material is the light emitting unit across the light emitting unit or the first detection unit.
  • the first detection unit realizes the function of detecting the irradiated radiation as an image, and the second detection unit realizes the function of detecting the irradiated radiation.
  • the radiation detection panel according to the first aspect of the present invention is configured by laminating the light emitting unit, the first detection unit, the second detection unit, and the partial reflection unit along the arrival direction of the radiation.
  • the two detection units it is possible to prevent an increase in the panel size along the direction approximately orthogonal to the radiation arrival direction.
  • the second detection unit that detects the light emitted from the light emitting unit by the organic photoelectric conversion material can be manufactured by attaching the organic photoelectric conversion material to the support using a droplet discharge head such as an inkjet head, Compared to the case where the second detection unit is configured using a material (for example, silicon) that requires vapor deposition or the like in production, it can be formed on a support having low strength and heat-resistant temperature. Therefore, in the first aspect of the present invention, the second detection unit is formed on the flexible support (the flexible support is generally thin and has high impact resistance. ).
  • the partial reflection part that reflects part of the light incident from the light emitting part side to the light emitting part side may have a uniform light reflectivity (light reflectivity) over the entire surface of the light receiving surface.
  • the ratio (light reflectivity) may be partially different in the light receiving surface, the thickness can be reduced as in any configuration, for example, in the form of a thin film.
  • the second detector is disposed on the opposite side of the first detector with respect to the light emitter, or on the opposite side of the light emitter with respect to the first detector. Is disposed between the first detection unit and the second detection unit when the first detection unit exists between the light emission unit and the second detection unit and between the light emission unit and the second detection unit. Since a part of the light incident from the light emitting part side is reflected to the light emitting part side, the first detection part is located on the light reflecting side of the partial reflecting part in any structure. . Thereby, compared with the case where the partial reflection part is not provided, the light-receiving amount of a 1st detection part increases, and the sensitivity of the image detection by a 1st detection part improves.
  • the detection by a 2nd detection part is provided by providing the partial reflection part. Is not disturbed. Therefore, according to the first aspect of the present invention, in addition to the function of detecting the irradiated radiation as an image, the configuration provided with the function of detecting the irradiated radiation has an increased panel size and a large thickness. This can be realized without increasing the image detection sensitivity. In addition, by forming the second detector on a flexible support, the radiation detection panel can be made thinner and more shock resistant, and the radiation detection panel can be handled more easily. Can be made.
  • the flexible support body on which the second detection portion is formed is a synthetic resin substrate.
  • the substrate made of synthetic resin is easy to reduce the thickness of the substrate although the heat resistant temperature is lower than that of a glass substrate, etc. Since it can be made lightweight, the handleability of the radiation detection panel can be further improved.
  • the 3rd aspect of this invention is a structure which the 1st detection part detects the light discharge
  • the first detection unit is configured to detect the light emitted from the light emitting unit as an image by the organic photoelectric conversion material, so that it is not necessary to perform vapor deposition when manufacturing the first detection unit. It can also be formed on a manufactured substrate. Then, by forming the first detection unit on the same support as the second detection unit as described above, compared to the case where the support is provided corresponding to each of the first detection unit and the second detection unit. By reducing the number of supports, the thickness of the radiation panel can be further reduced, and the handleability of the radiation detection panel can be further improved.
  • the support according to the second aspect of the present invention is used.
  • the synthetic resin substrate can be used as a support for supporting the light emitting portion, which is preferable.
  • the support body on which the second detection unit is flexible has heat resistance that can be used for vapor deposition, for example.
  • the first detection unit is formed on the same support as the second detection unit.
  • the thickness of the radiation panel can be further reduced by reducing the number of supports as compared with the case where the supports are provided corresponding to the first detector and the second detector, respectively. This can further improve the handleability of the radiation detection panel.
  • a fifth aspect of the present invention is the method according to any one of the first aspect of the present invention to the fourth aspect of the present invention, wherein the first detection unit is arranged upstream of the light emission direction in the arrival direction of the radiation.
  • the first detection unit is arranged on the upstream side in the radiation arrival direction with respect to the light emitting unit, so that the first detection unit is arranged on the upstream side in the radiation arrival direction with respect to the light emission unit.
  • the amount of light received by one detection unit increases, and the sensitivity in image detection of the first detection unit that detects light emitted from the light emitting unit as an image can be improved.
  • the sixth aspect of the present invention is the method according to any one of the first aspect of the present invention to the fifth aspect of the present invention, wherein the second detection unit is located only on the opposite side of the light emitting unit across the first detection unit.
  • the first detection unit is light transmissive
  • the total reflection is arranged on the opposite side of the first detection unit across the light emitting unit, and totally reflects the light incident from the light emitting unit side to the light emitting unit side.
  • the unit is further provided. Thereby, in addition to the light emitted from the light emitting unit to the first detecting unit, the light emitted from the light emitting unit to the side opposite to the first detecting unit is also totally reflected by the total reflection unit.
  • the light is incident through the light emitting unit, and the sensitivity of image detection by the first detection unit can be further improved.
  • the second detection unit is disposed only on the opposite side of the light emitting unit across the first detection unit, even if the total reflection unit is disposed at the above position, the light emission is performed. Part of the light emitted from the unit is incident on the second detection unit, and detection by the second detection unit is not hindered.
  • the seventh aspect of the present invention is the method according to any one of the first aspect of the present invention to the fifth aspect of the present invention, wherein the second detection unit is only on the opposite side of the first detection unit across the light emitting unit.
  • the first detection unit is light-transmitting
  • the total reflection is arranged on the opposite side of the light emitting unit across the first detection unit, and totally reflects light incident from the light emitting unit side to the light emitting unit side.
  • the unit is further provided. In this case, out of the light incident from the light emitting unit, the light that has once passed through the first detection unit and totally reflected by the total reflection unit is incident again on the first detection unit.
  • the sensitivity of image detection by the unit can be further improved.
  • the second detection unit is disposed only on the opposite side of the first detection unit across the light emitting unit, even if the total reflection unit is disposed at the above position, the light emission is performed. Part of the light emitted from the unit is incident on the second detection unit, and detection by the second detection unit is not hindered.
  • an eighth aspect of the present invention is the light emitting unit side according to any one of the first aspect of the present invention to the seventh aspect of the present invention, disposed on the opposite side of the light emitting unit across the second detection unit. Is further provided with a total reflection portion that totally reflects light incident from the light emitting portion side. In this case, out of the light incident from the light emitting unit side, the light once transmitted through the second detection unit and totally reflected by the total reflection unit is again incident on the second detection unit. The sensitivity of detection by the detection unit can also be improved.
  • any one of the first aspect to the eighth aspect of the present invention only one light emitting unit is provided, and the single light emitting unit and the first detecting unit are provided. And a member existing between the single light emitting unit and the second detection unit each have a light transmission property that transmits at least part of the irradiated light, and the first detection unit The second detection unit detects each light emitted from the single light emitting unit. Thereby, the light emitted from the light emitting unit is detected by the first detecting unit and the second detecting unit, respectively, and the light emitting unit is made common to the first detecting unit and the second detecting unit. It is not necessary to provide a plurality of light emitting portions in order to provide the portion, and the thickness can be further suppressed.
  • the first detection section is formed on a plate-like support having light transmittance.
  • the light emitting unit is stacked on one surface of the plate-like support
  • the second detection unit is stacked on the other surface
  • the partial reflection unit is disposed between the first detection unit and the second detection unit.
  • the radiation is arranged so as to come from the second detection unit side.
  • the first detection unit, the second detection unit, and the light emitting unit are supported by a single plate-like support, so that at least one of the first detection unit, the second detection unit, and the light emitting unit is different from the others.
  • the panel can be made thinner than when supported by a different support.
  • the first detection unit and the second detection unit are arranged on the radiation incident side of the light emitting unit, the light detection efficiency by the first detection unit and the second detection unit can be improved. Since the partial reflection unit is disposed between the first detection unit and the second detection unit, the amount of light received by the first detection unit is larger than when the partial reflection unit is not provided. It is possible to prevent the image detection sensitivity from being lowered due to the provision.
  • an eleventh aspect of the present invention is the light according to any one of the first aspect to the tenth aspect of the present invention, based on the light detection result by the second detection unit.
  • a first control unit that performs first control to synchronize the detection timing with the radiation irradiation timing to the radiation detection panel.
  • the radiation detection control that synchronizes the light detection timing by the first detection unit with the radiation irradiation timing to the radiation detection panel without requiring notification from the outside about the radiation irradiation timing to the radiation detection panel. It can be realized by a panel alone.
  • the first detection unit is output from a photoelectric conversion unit that converts light emitted from the light emitting unit into an electrical signal, and the photoelectric conversion unit.
  • a thirteenth aspect of the present invention is that, in the twelfth aspect of the present invention, the first control unit performs the first control when light emitted from the light emitting unit is no longer detected by the second detection unit. In addition, control for starting reading of the charges accumulated in the charge accumulation unit of the first detection unit is also performed.
  • a fourteenth aspect of the present invention provides the radiation to the radiation detection panel based on the light detection result by the second detector in any one of the first aspect to the eleventh aspect of the present invention.
  • a second control unit that performs a second control for terminating the emission of radiation from the radiation source when the integrated irradiation amount reaches a predetermined value.
  • the radiation emission from the radiation source is terminated when the cumulative radiation dose to the radiation detection panel reaches a predetermined value without separately providing a detection unit for detecting the cumulative radiation dose to the radiation detection panel. Control can be realized.
  • the second control unit performs radiation to the radiation detection panel based on a light detection result by the second detection unit.
  • the second control unit performs radiation to the radiation detection panel based on a light detection result by the second detection unit.
  • the control device that controls the emission of radiation from the radiation source is notified that the cumulative dose of radiation has reached a predetermined value.
  • An instruction signal for instructing the end of radiation emission from the radiation source is output as a signal.
  • the display unit in the configuration in which the display unit is provided in the radiation detection panel according to the present invention, for example, in the output of the signal notifying that the cumulative dose of radiation has reached a predetermined value, It also includes outputting a signal for switching the display on the display unit to a display for notifying that the integrated dose of radiation has reached a predetermined value.
  • the present invention comprises a light emitting unit that emits light by absorbing radiation transmitted through a subject, a first detection unit that detects light emitted from the light emitting unit as an image, and an organic photoelectric conversion material, and emits light.
  • the first detection unit exists between the light emitting unit and the second detection unit
  • the first detection unit is disposed between the first detection unit and the second detection unit, and is incident from the light emission unit side.
  • the function to detect the irradiated radiation is separated from the function to detect the irradiated radiation as an image.
  • Increased panel size, significant increase in thickness, and low image detection sensitivity Can be achieved without incurring has an excellent effect that.
  • RIS10 Radiology Information ⁇ ⁇ ⁇ System
  • the RIS 10 is connected to an in-hospital network 16 composed of a wired or wireless LAN (Local Area Network), and the RIS 10 is a hospital information system (HIS) provided in the same hospital.
  • a HIS server (not shown) for managing the entire HIS is also connected to the hospital network 16.
  • Each terminal device 12 is composed of a personal computer (PC) or the like, and is operated by a doctor or a radiographer.
  • a doctor or a radiographer inputs / views diagnostic information and facility reservation via the terminal device 12, and a radiographic imaging request (imaging reservation) is also input via the terminal device 12.
  • the RIS server 14 is a computer configured to include a storage unit 14A for storing a RIS database (DB).
  • DB RIS database
  • the RIS database includes patient attribute information (for example, patient name, sex, date of birth, age, Blood type, patient ID, etc.), medical history, consultation history, radiographic imaging history, other information about the patient such as data of radiographic images taken in the past, electronic cassette 32 (described later) of each radiographic imaging system 18 Information related to the information (for example, identification number, model, size, sensitivity, usable imaging part (content of imaging request that can be supported), use start date, number of times of use, etc.) is registered.
  • the RIS server 14 performs processing for managing the entire RIS 10 based on information registered in the RIS database (for example, accepts imaging requests from the terminal devices 12 and manages radiographic imaging schedules in the individual radiographic imaging systems 18). Process).
  • Each radiographic imaging system 18 is a system that performs radiographic imaging instructed by the RIS server 14 according to the operation of a doctor or radiographer, and generates a radiation generator 34 that generates radiation to be irradiated to a patient (subject).
  • An electronic cassette 32 having a built-in radiation detector that detects radiation that has passed through the patient and converts / outputs it into radiographic image data, a cradle 40 that charges a battery 96A (see FIG. 3) built in the electronic cassette 32, and each of the above Each console 42 is provided for controlling the operation of the device.
  • the electronic cassette 32 is an example of a radiation detection panel according to the present invention.
  • a radiation imaging room 44 in which a radiation source 130 (details will be described later) of the radiation generator 34 is disposed, and a standing table 45 used when performing radiation imaging in a standing position
  • a stand 46 used when performing radiography at the position, and the front space of the stand 45 is set as the shooting position 48 of the subject when performing radiography at the standing position
  • the space above the prone position 46 is set as a photographing position 50 of the person to be imaged when performing radiography in the prone position.
  • the stand 45 is provided with a holding unit 150 that holds the electronic cassette 32, and the electronic cassette 32 is held by the holding unit 150 when a radiographic image is taken in the standing position. Further, when taking a radiographic image in the supine position, the electronic cassette 32 is placed on the top plate 152 of the supine stand 46.
  • the radiation source 130 is arranged around a horizontal axis (see FIG. 5) in order to enable radiation imaging in a standing position and in a standing position by radiation from a single radiation source 130.
  • 2 is provided that can be rotated in the direction of arrow A in FIG. 2, can move in the vertical direction (in the direction of arrow B in FIG. 2), and can move in the horizontal direction (in the direction of arrow C in FIG. 2) It has been.
  • the support moving mechanism 52 includes a drive source that rotates the radiation source 130 around a horizontal axis, a drive source that moves the radiation source 130 in the vertical direction, and a drive source that moves the radiation source 130 in the horizontal direction.
  • the radiation source 130 is set to the position 54 for standing imaging (the patient whose emitted radiation is located at the imaging position 48). If the posture at the time of imaging specified by the imaging condition information is in the supine position, the radiation source 130 is moved to the position 56 for supine imaging (the emitted radiation is at the imaging position 50). The patient is moved to the position irradiated from above.
  • the cradle 40 is formed with a housing portion 40A that can store the electronic cassette 32.
  • the electronic cassette 32 is accommodated in the accommodating portion 40A of the cradle 40 when not in use, and the built-in battery is charged by the cradle 40 in this state. Further, when the radiographic image is taken, it is taken out from the cradle 40 by a radiographer or the like, and is held by the holding unit 150 of the stand 45 if the radiographing posture is in the upright position. It is placed on the top plate 152.
  • the electronic cassette 32 is not limited to being disposed at any of the above two types of positions at the time of imaging, and the electronic cassette 32 has portability, so that it can be arbitrarily placed in the radiation imaging room 44 at the time of imaging. It goes without saying that it can be arranged freely at the position of
  • the electronic cassette 32 includes a rectangular parallelepiped housing 54 made of a material that transmits the radiation X and having a rectangular irradiation surface 56 on which the radiation X is irradiated.
  • the electronic cassette 32 is hermetically sealed by the housing 54 and has a waterproof structure, and the same electronic cassette 32 can be used repeatedly by sterilizing and washing as necessary.
  • the radiation as the second detection unit of the present invention is sequentially arranged from the radiation X irradiation surface 56 side of the housing 54 along the arrival direction of the radiation X that has passed through the subject.
  • a detector 62, a radiation detector 60 as a first detector of the present invention, and a scintillator 71 as a light emitting unit of the present invention are stacked.
  • a case 31 that houses various electronic circuits including a microcomputer and a rechargeable and detachable battery 96 ⁇ / b> A is disposed inside the housing 54 at one end along the longitudinal direction of the irradiation surface 56. Yes.
  • the radiation detector 60 and the various electronic circuits described above are operated by electric power supplied from a battery 96 ⁇ / b> A housed in the case 31.
  • a radiation shielding member made of a lead plate or the like is provided on the irradiation surface 56 side of the case 31 in the housing 54. It is arranged.
  • the irradiation surface 56 of the housing 54 is composed of a plurality of LEDs, and the operation such as the operation mode of the electronic cassette 32 (for example, “ready state” or “data transmitting”), the remaining capacity state of the battery 96A, and the like.
  • a display unit 56A for displaying the state is provided.
  • the display unit 56A may be formed of a light emitting element other than an LED, or a display unit such as a liquid crystal display or an organic EL display.
  • the display unit 56 ⁇ / b> A may be provided at a site other than the irradiation surface 56.
  • the radiation detector 60 includes a pixel unit 74 including a photoelectric conversion unit 72 including a photodiode (PD: PhotoDiode), a thin film transistor (TFT: Thin Film Transistor) 70, and a storage capacitor 68. 6, a plurality of TFT active matrix substrates (hereinafter referred to as “TFT substrates”) formed in a matrix on an insulating substrate 64 that is flat and has a rectangular outer shape in plan view. Yes.
  • PD photodiode
  • TFT Thin Film Transistor
  • the photoelectric conversion unit 72 is configured such that a photoelectric conversion film 72C that absorbs light emitted from the scintillator 71 and generates charges according to the absorbed light is disposed between the upper electrode 72A and the lower electrode 72B. Yes.
  • the upper electrode 72A is preferably made of a conductive material having a high light transmittance with respect to light having the emission wavelength of the scintillator 71 because the light emitted from the scintillator 71 needs to enter the photoelectric conversion film 72C.
  • a transparent conductive oxide (TCO) having a high transmittance for visible light and a small resistance value.
  • a metal thin film such as Au can be used as the upper electrode 72A, a resistance value tends to increase when an optical transmittance of 90% or more is obtained, so that the TCO is preferable.
  • the upper electrode 72A may have a single configuration common to all the pixel portions, or may be divided for each pixel portion.
  • the material constituting the photoelectric conversion film 72C may be any material that absorbs light and generates charges, and for example, amorphous silicon, an organic photoelectric conversion material, or the like can be used.
  • amorphous silicon an organic photoelectric conversion material, or the like can be used.
  • the photoelectric conversion film 72 ⁇ / b> C is made of amorphous silicon, the light emitted from the scintillator 71 can be configured to absorb over a wide wavelength range. However, it is necessary to perform vapor deposition for forming the photoelectric conversion film 72C made of amorphous silicon. If the insulating substrate 64 is made of a synthetic resin, the heat resistance of the insulating substrate 64 may be insufficient.
  • the photoelectric conversion film 72C is made of a material containing an organic photoelectric conversion material, an absorption spectrum that exhibits high absorption mainly in the visible light region is obtained, and other than the light emitted from the scintillator 71 by the photoelectric conversion film 72C. Therefore, noise generated when radiation such as X-rays and ⁇ -rays is absorbed by the photoelectric conversion film 72C can be suppressed.
  • the photoelectric conversion film 72C made of an organic photoelectric conversion material can be formed by attaching an organic photoelectric conversion material on a body to be formed using a droplet discharge head such as an inkjet head. Heat resistance is not required. For this reason, in this embodiment, the photoelectric conversion film 72C of the photoelectric conversion unit 72 is formed of an organic photoelectric conversion material.
  • the photoelectric conversion film 72C is made of an organic photoelectric conversion material, radiation is hardly absorbed by the photoelectric conversion film 72C. Therefore, in the surface reading method (ISS) in which the radiation detector 60 is disposed so that the radiation is transmitted, radiation detection is performed. Attenuation of radiation due to transmission through the vessel 60 can be suppressed, and a decrease in sensitivity to radiation can be suppressed. Therefore, it is particularly suitable for the surface reading method (ISS) to configure the photoelectric conversion film 72C with an organic photoelectric conversion material.
  • the organic photoelectric conversion material that constitutes the photoelectric conversion film 72 ⁇ / b> C preferably has an absorption peak wavelength that is closer to the emission peak wavelength of the scintillator 71 in order to absorb light emitted from the scintillator 71 most efficiently.
  • the absorption peak wavelength of the organic photoelectric conversion material coincides with the emission peak wavelength of the scintillator 71, but if the difference between the two is small, the light emitted from the scintillator 71 can be sufficiently absorbed.
  • the difference between the absorption peak wavelength of the organic photoelectric conversion material and the emission peak wavelength with respect to the radiation of the scintillator 71 is preferably within 10 nm, and more preferably within 5 nm.
  • organic photoelectric conversion materials that can satisfy such conditions include quinacridone organic compounds and phthalocyanine organic compounds.
  • quinacridone organic compounds and phthalocyanine organic compounds.
  • the absorption peak wavelength in the visible region of quinacridone is 560 nm
  • CsI: Tl (cesium iodide added with thallium) is used as the material of the scintillator 71.
  • the wavelength difference can be made within 5 nm, and the amount of charge generated in the photoelectric conversion film 72C can be substantially maximized. Since an organic photoelectric conversion material applicable to the photoelectric conversion film 72C is described in detail in Japanese Patent Application Laid-Open No. 2009-32854, description thereof is omitted.
  • the photoelectric conversion film 72C applicable to the radiation detector 60 will be specifically described.
  • the electromagnetic wave absorption / photoelectric conversion site in the radiation detector 60 is an organic layer including electrodes 72A and 72B and a photoelectric conversion film 72C sandwiched between the electrodes 72A and 72B. More specifically, this organic layer is a part that absorbs electromagnetic waves, a photoelectric conversion part, an electron transport part, a hole transport part, an electron blocking part, a hole blocking part, a crystallization preventing part, an electrode, and an interlayer contact. It can be formed by stacking or mixing improved parts.
  • the organic layer preferably contains an organic p-type compound or an organic n-type compound.
  • An organic p-type semiconductor (compound) is a donor organic semiconductor (compound) mainly represented by a hole transporting organic compound, and is an organic compound having a property of easily donating electrons. More specifically, an organic compound having a smaller ionization potential when two organic materials are used in contact with each other. Accordingly, any organic compound having an electron donating property can be used as the donor organic compound.
  • the organic n-type semiconductor (compound) is an acceptor organic semiconductor (compound) mainly represented by an electron transporting organic compound, and is an organic compound having a property of easily accepting electrons. More specifically, the organic compound having the higher electron affinity when two organic compounds are used in contact with each other. Therefore, any organic compound can be used as the acceptor organic compound as long as it is an organic compound having an electron accepting property.
  • the materials applicable as the organic p-type semiconductor and the organic n-type semiconductor and the configuration of the photoelectric conversion film 72C are described in detail in Japanese Patent Laid-Open No. 2009-32854, the description thereof is omitted.
  • the photoelectric conversion film 72 ⁇ / b> C may further contain fullerenes or carbon nanotubes.
  • the photoelectric conversion unit 72 only needs to include at least the electrode pairs 72A and 72B and the photoelectric conversion film 72C, but in order to suppress an increase in dark current, at least one of an electron blocking film and a hole blocking film is provided. It is preferable to provide both.
  • the electron blocking film can be provided between the lower electrode 72B and the photoelectric conversion film 72C.
  • a bias voltage is applied between the lower electrode 72B and the upper electrode 72A, the electron blocking film is applied from the lower electrode 72B to the photoelectric conversion film 72C.
  • An increase in dark current due to injection of electrons can be suppressed.
  • An electron donating organic material can be used for the electron blocking film.
  • the material actually used for the electron blocking film may be selected according to the material of the adjacent electrode and the material of the adjacent photoelectric conversion film 72C, and the electron affinity is 1.3 eV or more from the work function (Wf) of the adjacent electrode material.
  • a material having a large (Ea) and an Ip equivalent to or smaller than the ionization potential (Ip) of the material of the adjacent photoelectric conversion film 72C is preferable. Since the material applicable as the electron donating organic material is described in detail in Japanese Patent Application Laid-Open No. 2009-32854, description thereof is omitted.
  • the thickness of the electron blocking film is preferably 10 nm or more and 200 nm or less, more preferably 30 nm or more and 150 nm or less, and particularly preferably, in order to reliably exhibit the dark current suppressing effect and prevent a decrease in photoelectric conversion efficiency of the photoelectric conversion unit 72. It is 50 nm or more and 100 nm or less.
  • the hole blocking film can be provided between the photoelectric conversion film 72C and the upper electrode 72A, and when a bias voltage is applied between the lower electrode 72B and the upper electrode 72A, the upper electrode 72A to the photoelectric conversion film 72C. It is possible to suppress the increase of dark current due to injection of holes into the substrate.
  • An electron-accepting organic material can be used for the hole blocking film.
  • the material actually used for the hole blocking film may be selected in accordance with the material of the adjacent electrode and the material of the adjacent photoelectric conversion film 72C, and the ionization is 1.3 eV or more from the work function (Wf) of the adjacent electrode material.
  • the potential (Ip) is large and that the Ea is equal to or larger than the electron affinity (Ea) of the material of the adjacent photoelectric conversion film 72C. Since the material applicable as the electron-accepting organic material is described in detail in Japanese Patent Application Laid-Open No. 2009-32854, description thereof is omitted.
  • the thickness of the hole blocking film is preferably 10 nm or more and 200 nm or less, more preferably 30 nm or more and 150 nm or less, particularly preferably, in order to reliably exhibit the dark current suppressing effect and prevent a decrease in the photoelectric conversion efficiency of the photoelectric conversion unit 308. Is from 50 nm to 100 nm.
  • the electron blocking film and the hole blocking film are used. It is sufficient to reverse the position of. Moreover, it is not essential to provide both the electron blocking film and the hole blocking film, and if any of them is provided, a certain degree of dark current suppressing effect can be obtained.
  • the storage capacitor 68 that stores the charges transferred to the lower electrode 72 ⁇ / b> B corresponding to the lower electrode 72 ⁇ / b> B of the photoelectric conversion unit 72, and the storage capacitor 68.
  • a TFT 70 that outputs charges as an electrical signal is formed.
  • the region where the storage capacitor 68 and the TFT 70 are formed partially overlaps the lower electrode 72B in plan view. Thereby, the storage capacitor 68 and the TFT 70 and the photoelectric conversion unit 72 in each pixel unit overlap in the thickness direction, and the storage capacitor 68, the TFT 70 and the photoelectric conversion unit 72 can be arranged in a small area.
  • the storage capacitor 68 is electrically connected to the corresponding lower electrode 72B through a wiring made of a conductive material formed through an insulating film 65A provided between the insulating substrate 64 and the lower electrode 72B. Yes. As a result, the charge collected by the lower electrode 72B is moved to the storage capacitor 68.
  • a gate electrode 70A, a gate insulating film 65B, and an active layer (channel layer) 70B are laminated, and a source electrode 70C and a drain electrode 70D are formed on the active layer 70B with a predetermined interval.
  • the active layer 70B can be formed of, for example, any of amorphous silicon, amorphous oxide, organic semiconductor material, carbon nanotube, etc., but the material capable of forming the active layer 70B is limited to these. is not.
  • an oxide containing at least one of In, Ga, and Zn (for example, an In—O system) is preferable, and at least two of In, Ga, and Zn are used. Oxides containing one (eg, In—Zn—O, In—Ga, and Ga—Zn—O) are more preferred, and oxides containing In, Ga, and Zn are particularly preferred.
  • an In—Ga—Zn—O-based amorphous oxide an amorphous oxide whose composition in a crystalline state is represented by InGaO 3 (ZnO) m (m is a natural number less than 6) is preferable, and in particular, InGaZnO. 4 is more preferable.
  • the amorphous oxide capable of forming the active layer 70B is not limited to these.
  • examples of the organic semiconductor material capable of forming the active layer 70B include, but are not limited to, phthalocyanine compounds, pentacene, vanadyl phthalocyanine, and the like.
  • the configuration of the phthalocyanine compound is described in detail in Japanese Patent Application Laid-Open No. 2009-212389, and thus the description thereof is omitted.
  • the active layer 70B of the TFT 70 is formed of any one of an amorphous oxide, an organic semiconductor material, a carbon nanotube, etc., radiation such as X-rays is not absorbed, or even if it is absorbed, a very small amount remains. The superimposition of noise on the image signal can be effectively suppressed.
  • the switching speed of the TFT 70 can be increased, and the degree of light absorption in the visible light region in the TFT 70 can be reduced.
  • the performance of the TFT 70 is remarkably deteriorated only by mixing a very small amount of metallic impurities into the active layer 70B. -It is necessary to extract and use for formation of the active layer 70B.
  • the photoelectric conversion film 72C formed of the organic photoelectric conversion material and the active layer 70B are formed.
  • the active layer of the TFT 70 is preferably formed of an organic semiconductor material.
  • the insulating substrate 64 may be any substrate that has optical transparency and little radiation absorption.
  • both the amorphous oxide constituting the active layer 70B of the TFT 70 and the organic photoelectric conversion material constituting the photoelectric conversion film 72C of the photoelectric conversion portion 72 can be formed at a low temperature. Therefore, the insulating substrate 64 is not limited to a substrate having high heat resistance such as a semiconductor substrate, a quartz substrate, and a glass substrate, and a flexible substrate made of synthetic resin, aramid, or bionanofiber can also be used.
  • flexible materials such as polyesters such as polyethylene terephthalate, polybutylene phthalate, polyethylene naphthalate, polystyrene, polycarbonate, polyethersulfone, polyarylate, polyimide, polycycloolefin, norbornene resin, poly (chlorotrifluoroethylene), etc.
  • a conductive substrate can be used. By using such a flexible substrate made of synthetic resin, it is possible to reduce the weight, which is advantageous for carrying around, for example.
  • the insulating substrate 64 includes an insulating layer for ensuring insulation, a gas barrier layer for preventing permeation of moisture and oxygen, an undercoat layer for improving flatness or adhesion to electrodes, and the like. May be provided.
  • the transparent electrode material can be cured at a high temperature to reduce the resistance, and can also be used for automatic mounting of a driver IC including a solder reflow process.
  • aramid has a thermal expansion coefficient close to that of ITO (indium tin oxide) or a glass substrate, there is little warping after manufacturing and it is difficult to crack.
  • aramid can make a substrate thinner than a glass substrate or the like.
  • the insulating substrate 64 may be formed by stacking an ultrathin glass substrate and aramid.
  • the bionanofiber is a composite of cellulose microfibril bundle (bacterial cellulose) produced by bacteria (acetic acid bacteria, Acetobacter® Xylinum) and transparent resin.
  • the cellulose microfibril bundle has a width of 50 nm and a size of 1/10 of the visible light wavelength, and has high strength, high elasticity, and low thermal expansion.
  • a transparent resin such as acrylic resin or epoxy resin into bacterial cellulose
  • a bio-nanofiber having a light transmittance of about 90% at a wavelength of 500 nm can be obtained while containing 60-70% of the fiber.
  • Bionanofiber has a low coefficient of thermal expansion (3-7ppm) comparable to silicon crystals, and is as strong as steel (460MPa), highly elastic (30GPa), and flexible. Compared to glass substrates, etc.
  • the insulating substrate 64 can be thinned.
  • the thickness of the radiation detector (TFT substrate) 60 as a whole is about 0.7 mm, for example, but in this embodiment, considering the reduction in thickness of the electronic cassette 32, the insulating property is reduced.
  • the substrate 64 a substrate made of synthetic resin having light permeability and flexibility is used. Thereby, the thickness of the radiation detector (TFT substrate) 60 as a whole can be reduced to about 0.1 mm, for example, and the radiation detector (TFT substrate) 60 can be made flexible. Further, by providing the radiation detector (TFT substrate) 60 with flexibility, the impact resistance of the radiation detector 60 (TFT substrate) is improved, and even when an impact is applied to the casing 30 of the electronic cassette 32.
  • the radiation detector (TFT substrate) 60 is not easily damaged.
  • plastic resin, aramid, bio-nanofiber, etc. all absorb little radiation, and when the insulating substrate 64 is formed of these materials, the amount of radiation absorbed by the insulating substrate 64 is also reduced. Even if the radiation is transmitted through the light detection unit 306 by (ISS), a decrease in sensitivity to radiation can be suppressed.
  • the thickness of the electronic cassette 32 is made of another material such as a glass substrate and has flexibility.
  • a substrate for example, a flexible glass substrate having a thickness of about 50 ⁇ m may be used as the insulating substrate 64.
  • the radiation detector (TFT substrate) 60 includes a plurality of gate wirings 76 extending in a certain direction (row direction) for turning on / off individual TFTs 70, and the certain constants.
  • the charge accumulated in the storage capacitor 68 (and between the upper electrode 72A and the lower electrode 72B of the photoelectric conversion unit 72) extending along the direction (column direction) intersecting with the direction is read through the on-state TFT 70.
  • a plurality of data wirings 78 are provided.
  • a planarizing layer 67 for flattening the TFT substrate is formed at the end of the radiation detector (TFT substrate) 60 opposite to the radiation arrival direction. .
  • a scintillator 71 that absorbs incident radiation and emits light is disposed on the opposite side of the radiation arrival direction across the radiation detector 60.
  • 60 the flattening layer 67
  • the scintillator 71 are bonded by an adhesive layer 69.
  • the light emission wavelength range of the scintillator 71 is preferably the visible light range (wavelength 360 nm to 830 nm), and in order to allow the radiation detector 60 to capture a monochrome radiographic image, it includes a green wavelength range. Is more preferable.
  • phosphors applied to the scintillator include, for example, CsI (Tl) (cesium iodide added with thallium), CsI (Na) (sodium-activated cesium iodide), GOS (Gd 2 O 2 S: Tb), and the like.
  • CsI Tl
  • Ca calcium iodide added with thallium
  • CsI Na
  • GOS Gd 2 O 2 S: Tb
  • the present invention is not limited to these materials.
  • CsI cesium iodide
  • Tl CsI having an emission spectrum of 420 nm to 700 nm during X-ray irradiation.
  • the emission peak wavelength of CsI (Tl) in the visible light region is 565 nm.
  • a substrate made of a synthetic resin having low heat resistance is used as the insulating substrate 64. Therefore, in this embodiment, as the scintillator 71, GOS that does not require vapor deposition or the like is used for forming the scintillator.
  • the scintillator 71 has a thickness of about 0.3 mm, for example.
  • a total reflection layer 172 that totally reflects light incident from the scintillator 71 side to the scintillator 71 side is provided on the opposite side of the scintillator 71 from the radiation detector 60.
  • the total reflection layer 172 is composed of a thin film made of a material such as aluminum and formed by vapor deposition, rolling, or the like.
  • other known configurations may be adopted as the total reflection layer 172. is there.
  • the total reflection layer 172 is an example of a total reflection portion according to the sixth aspect of the present invention.
  • the radiation detector 62 is provided on the opposite side of the scintillator 71 (upstream in the arrival direction of radiation) with the radiation detector 60 interposed therebetween.
  • the radiation detector 62 includes a wiring layer 142 in which a wiring 160 (see FIG. 7) to be described later is patterned on the surface of the insulating substrate 64 of the radiation detector 60 opposite to the side on which the pixel unit 74 is formed.
  • An insulating layer 144 is sequentially formed, and a plurality of sensor portions 146 for detecting light emitted from the scintillator 71 and transmitted through the radiation detector 60 are formed on the upper layer (lower side in FIG. 4), and an upper layer of the sensor portion 146 is further formed. Further, a protective layer 148 is formed.
  • the thickness of the radiation detection unit 62 is, for example, about 0.05 mm.
  • the sensor unit 146 includes an upper electrode 147A and a lower electrode 147B, and a photoelectric conversion film 147C that generates light by absorbing light from the scintillator 71 is disposed between the upper electrode 147A and the lower electrode 147B. ing.
  • a photoelectric conversion film 147C As the sensor unit 146 (photoelectric conversion film 147C), it is possible to apply a PIN type or MIS type photodiode using amorphous silicon, but in the present embodiment, the same as the photoelectric conversion film 72C of the photoelectric conversion unit 72.
  • the photoelectric conversion film 147C is made of an organic photoelectric conversion material.
  • the photoelectric conversion film 147C by attaching the organic photoelectric conversion material onto the object to be formed using a droplet discharge head such as an inkjet head, and the insulating substrate 64 has light transmittance. It is possible to use a thin substrate made of a synthetic resin.
  • the partial reflection layer 170 is not limited to this configuration, and a desired light reflectance (light transmittance) can be obtained for the electrode of the radiation detection unit 62 (for example, the lower electrode 147B disposed on the radiation detector 60 side). By configuring as described above, it may be configured to function as the partial reflection layer 170, or another known configuration that functions as the partial reflection layer 170 may be employed.
  • the partial reflection layer 170 is a partial reflection portion according to the first aspect of the present invention (more specifically, “between the light emitting portion and the second detection portion and between the first detection portion and the second detection portion”). This is an example of a “partial reflection part”.
  • the radiation detection unit 62 is for detecting the timing of irradiation of radiation to the electronic cassette 32 and detecting the integrated dose of radiation to the electronic cassette 32, and the detection (imaging) of the radiation image is performed. Since the detection is performed by the radiation detector 60, the sensor unit 146 of the radiation detection unit 62 has a larger arrangement pitch (lower arrangement density) than the pixel unit 74 of the radiation detector 60. The light receiving area has a size corresponding to several to several hundreds of pixel portions 74 of the radiation detector 60.
  • each gate wiring 76 of the radiation detector 60 is connected to a gate line driver 80, and each data wiring 78 is connected to a signal processing unit 82.
  • the radiation corresponding to each position on the irradiation surface 56 in the scintillator 71 is irradiated with the radiation at each position.
  • the amount of light corresponding to the amount is emitted, and the photoelectric conversion unit 72 of each pixel unit 74 generates a charge having a magnitude corresponding to the amount of light emitted from the corresponding portion of the scintillator 71. Charges are accumulated in the storage capacitors 68 of the individual pixel portions 74 (and between the upper electrode 72A and the lower electrode 72B of the photoelectric conversion portion 72).
  • the TFTs 70 of the individual pixel portions 74 are row-wise by signals supplied from the gate line drivers 80 via the gate wirings 76.
  • the charges stored in the storage capacitor 68 of the pixel unit 74 that is turned on in order and the TFT 70 is turned on are transmitted as an analog electric signal through the data wiring 78 and input to the signal processing unit 82. Accordingly, the charges accumulated in the storage capacitors 68 of the individual pixel portions 74 are sequentially read out in units of rows.
  • the signal processing unit 82 includes an amplifier and a sample-and-hold circuit provided for each data wiring 78, and an electric signal transmitted through each data wiring 78 is amplified by the amplifier and then held in the sample-and-hold circuit.
  • the signal processing unit 82 includes an amplifier and a sample-and-hold circuit provided for each data wiring 78, and an electric signal transmitted through each data wiring 78 is amplified by the amplifier and then held in the sample-and-hold circuit.
  • a multiplexer and an A / D (analog / digital) converter are connected in order to the output side of the sample and hold circuit, and the electrical signals held in the individual sample and hold circuits are sequentially (serially) input to the multiplexer.
  • the digital image data is converted by an A / D converter.
  • An image memory 90 is connected to the signal processing unit 82, and image data output from the A / D converter of the signal processing unit 82 is sequentially stored in the image memory 90.
  • the image memory 90 has a storage capacity capable of storing image data for a plurality of frames, and image data obtained by imaging is sequentially stored in the image memory 90 every time a radiographic image is captured.
  • the image memory 90 is connected to a cassette control unit 92 that controls the operation of the entire electronic cassette 32.
  • the cassette control unit 92 includes a microcomputer, and includes a CPU 92A, a memory 92B including a ROM and a RAM, a nonvolatile storage unit 92C including an HDD (Hard Disk Drive), a flash memory, and the like.
  • a wireless communication unit 94 is connected to the cassette control unit 92.
  • the wireless communication unit 94 is compatible with wireless LAN (Local Area Network) standards represented by IEEE (Institute of Electrical and Electronics Electronics) (802.11a / b / g / n), etc. Control the transmission of various information between them.
  • the cassette control unit 92 can wirelessly communicate with the console 42 via the wireless communication unit 94, and can transmit and receive various information to and from the console 42.
  • the radiation detection unit 62 is provided with the same number of wirings 160 as the sensor units 146, and each sensor unit 146 of the radiation detection unit 62 is connected to the signal detection unit 162 via a different wiring 160.
  • the signal detection unit 162 includes an amplifier, a sample hold circuit, and an A / D converter provided for each wiring 160, and is connected to the cassette control unit 92. Under the control of the cassette control unit 92, the signal detection unit 162 samples signals transmitted from the individual sensor units 146 via the wiring 160 at predetermined intervals, converts the sampled signals into digital data, and converts the cassettes into the cassette data. The data is sequentially output to the control unit 92.
  • the electronic cassette 32 is provided with a power supply unit 96, and the various electronic circuits described above (gate line driver 80, signal processing unit 82, image memory 90, wireless communication unit 94, cassette control unit 92, signal detection unit 162). Etc.) are connected to the power supply unit 96 (not shown), and are operated by the power supplied from the power supply unit 96.
  • the power supply unit 96 incorporates the aforementioned battery (secondary battery) 96A so as not to impair the portability of the electronic cassette 32, and supplies power from the charged battery 96A to various electronic circuits.
  • the console 42 is composed of a computer, a CPU 104 that controls the operation of the entire apparatus, a ROM 106 that stores various programs including a control program in advance, a RAM 108 that temporarily stores various data, and various data Are connected to each other via a bus.
  • a communication I / F unit 132 and a wireless communication unit 118 are connected to the bus, the display 100 is connected via the display driver 112, and the operation panel 102 is further connected via the operation input detection unit 114. .
  • the communication I / F unit 132 is connected to the radiation generator 34 via the connection terminal 42 ⁇ / b> A and the communication cable 35.
  • the console 42 (the CPU 104 thereof) transmits / receives various information such as an exposure condition to / from the radiation generator 34 via the communication I / F unit 132.
  • the wireless communication unit 118 has a function of performing wireless communication with the wireless communication unit 94 of the electronic cassette 32, and the console 42 (the CPU 104) transmits and receives various information such as image data to and from the electronic cassette 32. 118.
  • the display driver 112 generates and outputs signals for displaying various information on the display 100, and the console 42 (the CPU 104 of the console 42) displays an operation menu, a captured radiation image, and the like on the display 100 via the display driver 112. Display.
  • the operation panel 102 includes a plurality of keys, and various information and operation instructions are input.
  • the operation input detection unit 114 detects an operation on the operation panel 102 and notifies the CPU 104 of the detection result.
  • the radiation generator 34 also includes a communication I / F unit 132 that transmits and receives various types of information such as an exposure condition between the radiation source 130 and the console 42, and an exposure condition (this exposure) received from the console 42. And a radiation source controller 134 for controlling the radiation source 130 based on the conditions (including the tube voltage and tube current information).
  • the electronic cassette 32 Since the electronic cassette 32 according to the present embodiment has a configuration in which the radiation detection unit 62, the partial reflection layer 170, the radiation detector 60, the scintillator 71, and the total reflection layer 172 are sequentially stacked along the radiation arrival direction. With the addition of the radiation detector 62 to the electronic cassette 32, it is possible to prevent the size of the electronic cassette 32 along the direction parallel to the irradiation surface 56 from increasing (the area of the irradiation surface 56 increases). it can.
  • the electronic cassette 32 is provided with the radiation detection unit 62 on the opposite side of the scintillator 71 with the radiation detector 60 interposed therebetween.
  • the electronic cassette 32 is light transmissive as the insulating substrate 64 constituting the radiation detector 60. Is used so that the light emitted from the scintillator 71 is transmitted through the radiation detector 60 and is also incident on the radiation detector 62, so that the radiation detector 60 and the radiation detector 62 are connected to the scintillator 71. Therefore, it is not necessary to provide a scintillator corresponding to the radiation detector 60 and a scintillator corresponding to the radiation detector 62, and the number of scintillators provided in the electronic cassette 32 can be reduced. Can be reduced (only one scintillator is required).
  • the electronic cassette 32 uses an insulating substrate 64 constituting the radiation detector 60 as a support for supporting the radiation detection unit 62, and the radiation detector 60 and the radiation detection unit 62 are the same. Since it is provided on the support (insulating substrate 64), it is not necessary to separately provide a support for supporting the radiation detection unit 62, and the number of supports (substrate or base) provided in the electronic cassette 32 can be reduced.
  • the photoelectric conversion film 147C of the radiation detector 62 is made of an organic photoelectric conversion material, so the scintillator 71 is made of GOS, and the photoelectric converter 72 of the radiation detector 60.
  • the photoelectric conversion film 72C is made of an organic photoelectric conversion material, and the active layer 70B of the TFT 70 is made of an amorphous oxide, so that the insulating substrate 64 is made of a light-transmitting synthetic resin and is thin.
  • the substrate can be used.
  • the scintillator 71 is made of a material that does not require vapor deposition (GOS or the like) for forming the scintillator, a substrate (a substrate with high heat resistance (vapor deposition substrate)) for forming the scintillator by vapor deposition is also unnecessary.
  • the electronic cassette 32 can make the insulating substrate 64 that also functions as a support for the radiation detection unit 62 thinner and the scintillator despite the addition of the radiation detection unit 62.
  • the irradiated radiation is detected separately from the function of detecting the irradiated radiation as an image.
  • the electronic cassette 32 having a function can be configured to be very thin.
  • the radiation detection unit 62 is disposed on the opposite side of the scintillator 71 with the radiation detector 60 interposed therebetween, and the partial reflection layer 170 includes the radiation detector 60 and the radiation detection unit 62. Since the light is emitted between the scintillator 71 and the light emitted from the scintillator 71 toward the radiation detector 60, the light transmitted through the radiation detector 60 and reflected by the partial reflection layer 170 is also re-transmitted to the radiation detector 60. Incident.
  • the total reflection layer 172 is provided on the opposite side of the radiation detector 60 with the scintillator 71 interposed therebetween, the light emitted from the scintillator 71 toward the total reflection layer 172 side is also totally transmitted to the radiation detector 60.
  • the light is reflected by the reflective layer 172, passes through the scintillator 71, and enters. Therefore, the amount of light received by the radiation detector 60 is increased as compared with the case where the partial reflection layer 170 and the total reflection layer 172 are not provided, and the sensitivity of image detection by the radiation detector 60 is improved.
  • the radiation detection unit 62 detects the irradiation timing and dose of radiation. Since the resolution as in the case of detecting an image is not required, for example, the arrangement pitch of the sensor units 146 is increased, and the area of the light receiving region of each sensor unit 146 is increased (for example, 1 cm ⁇ 1 cm or more). By adopting the configuration, it is possible to compensate for a decrease in sensitivity of the radiation detection unit 62 due to a decrease in the amount of received light, and thereby it is possible to accurately detect the irradiation timing and dose of radiation.
  • the terminal device 12 When radiographing is performed, the terminal device 12 (see FIG. 1) accepts an imaging request from a doctor or a radiographer. In the imaging request, a patient to be imaged, an imaging region to be imaged, an imaging mode (still image shooting or moving image shooting) are specified, and tube voltage, tube current, and the like are specified as necessary.
  • the terminal device 12 notifies the RIS server 14 of the contents of the accepted imaging request.
  • the RIS server 14 stores the contents of the imaging request notified from the terminal device 12 in the database 14A.
  • the console 42 accesses the RIS server 14 to acquire the content of the imaging request and the attribute information of the patient to be imaged from the RIS server 14, and displays the content of the imaging request and the attribute information of the patient on the display 100 (see FIG. 8). ).
  • the radiographer performs preparatory work for radiographic imaging based on the content of the radiography request displayed on the display 100. For example, when imaging the affected area of the subject lying on the prone table 46 shown in FIG. 2, an electronic cassette 32 is placed between the prone position 46 and the subject's imaging site in accordance with the imaging site. Deploy. The photographer designates a tube voltage, a tube current, and the like when the operation panel 102 is irradiated with the radiation X.
  • an automatic irradiation that controls the irradiation of radiation from the radiation source 130 by detecting the cumulative value of the radiation dose to the electronic cassette 32 using the radiation detector 62.
  • Control is performed.
  • the electronic cassette 32 instructs the console 42 to end the emission of radiation from the radiation source 130 when the accumulated radiation dose accumulated value reaches the upper limit value, and the radiation detector 60. Reading of the image from is started.
  • the radiographic image to be captured is a still image
  • the upper limit value of the cumulative radiation dose is set to a value that provides a clear still image as the radiographic image of the imaging region. In the case of an image, a value is set for suppressing exposure of the subject within an allowable range.
  • the upper limit value of the cumulative radiation dose value may be input from the operation panel 102 by the photographer during imaging, or the upper limit value of the cumulative radiation dose value is stored in advance for each imaging region.
  • the photographer may designate an imaging region on the operation panel 102 and read the upper limit value of the radiation dose cumulative value corresponding to the designated imaging region, or the patient may be stored in the database 14A of the RIS server 14.
  • Each day the daily exposure dose is stored, and based on this information, the total exposure dose of the subject within a predetermined period (for example, the last three months) is calculated, and the subject's exposure dose is calculated from the calculated total exposure dose.
  • the allowable exposure dose in the current imaging may be calculated, and the calculated allowable exposure dose may be used as the upper limit value of the cumulative radiation dose.
  • the photographer When the above-described preparatory work is completed, the photographer performs an operation for notifying the completion of the preparatory work via the operation panel 102 of the console 42, and the console 42 uses the operation as a trigger to specify the specified tube voltage and tube current.
  • the radiation source control unit 134 of the radiation generator 34 stores the exposure conditions received from the console 42 in a built-in memory or the like, and the cassette control unit 92 of the electronic cassette 32 stores the imaging conditions received from the console 42 in the storage unit 92C.
  • the console 42 When the transmission of the information to the radiation generator 34 and the electronic cassette 32 is normally completed, the console 42 notifies the photographer that the photographing is possible by switching the display 100 and confirms this notification. The photographer who has performed the operation instructs the start of shooting via the operation panel 102 of the console 42. As a result, the console 42 transmits an instruction signal instructing the start of exposure to the radiation generator 34, and the radiation generator 34 emits radiation with a tube voltage and a tube current corresponding to the exposure conditions received in advance from the console 42. Radiation is emitted from the source 130.
  • the shooting control program stored in advance in the storage unit 92C is executed by the CPU 92A to perform the shooting control process shown in FIG.
  • step 250 the radiation dose cumulative value stored in a predetermined area on the memory 92B is initialized to zero.
  • step 252 it is determined whether or not the designated shooting mode is a moving image shooting mode. If the specified shooting mode is the still image shooting mode, the determination is negative and the process proceeds to step 256. However, if the specified shooting mode is the moving image shooting mode, the determination in step 252 is affirmed and step 254 is performed. Then, after setting a shooting cycle according to the frame rate of the moving image to be shot, the flow goes to step 256.
  • step 256 the level of the signal supplied from the gate line driver 80 to the TFT 70 via the gate wiring 76 is switched to the level at which the TFT 70 is turned on simultaneously for all the gate wirings 76 of the radiation detector 60. As a result, all the TFTs 70 of the radiation detector 60 are turned on. As a result, the charges accumulated in the storage capacitors 68 of the individual pixel portions 74 of the radiation detector 60 (and between the upper electrode 72A and the lower electrode 72B of the photoelectric conversion portion 72) are discarded and stored in the electronic cassette 32. Until the radiation is irradiated, the dark current output from the photoelectric conversion unit 72 of each pixel unit 74 is also prevented from being accumulated as a charge.
  • the output signal transmitted from each sensor unit 146 of the radiation detection unit 62 via the wiring 160 is acquired as digital data (radiation dose detection value) via the signal detection unit 162.
  • the level of the output signal from each sensor unit 146 of the radiation detector 62 depends on the amount of light received from the scintillator 71 and transmitted through the radiation detector (TFT substrate) 60 and received by each sensor unit 146.
  • the amount of light received by each sensor unit 146 changes according to the amount of light emitted from the scintillator 71, and the amount of light emitted from the scintillator 71 changes according to the amount of radiation applied to the electronic cassette 32. Therefore, the value of the above digital data corresponds to the radiation dose detection value for the electronic cassette 32 by the radiation detector 62.
  • step 260 based on the radiation dose detection value acquired from each sensor unit 146 of the radiation detection unit 62, it is determined whether or not the radiation dose detection value is equal to or greater than a threshold value. It is determined whether irradiation has started. Note that, as the radiation dose detection value to be compared with the threshold value, an average value of the radiation dose detection values acquired from each sensor unit 146 may be used, but the subject to be imaged in the irradiation surface 56 of the electronic cassette 32 may be used. As for a portion irradiated with radiation that has passed through the body of the subject, since a part of the radiation is absorbed by the body of the subject to be irradiated, the radiation dose is reduced. It is preferable to use an irradiation amount detection value acquired from the sensor unit 146 corresponding to a portion that is directly irradiated (irradiated without passing through the body of the subject).
  • the sensor unit 146 using the irradiation amount detection value is disposed, for example, at a position close to any one of the four corners of the irradiation surface 56 that is rarely irradiated with radiation that has passed through the body of the subject.
  • the sensor unit 146 can be applied.
  • information on the imaging region is acquired from the console 42, and according to the imaging region represented by the acquired information.
  • the sensor unit 146 that uses the detected dose value may be switched.
  • step 260 If the determination in step 260 is negative, the process returns to step 258, and steps 258 and 260 are repeated until the determination in step 260 is affirmed.
  • the emission of radiation from the radiation source 130 is started and the emitted radiation is irradiated on the electronic cassette 32 after a part of the radiation passes through the body of the subject, irradiation of the radiation acquired in step 258 is performed.
  • the amount detection value is equal to or greater than the threshold value
  • the determination in step 260 is affirmed and the process proceeds to step 262.
  • step 262 the level of a signal supplied from the gate line driver 80 to the TFT 70 via the gate wiring 76 is switched to a level that turns off the TFT 70 by simultaneously performing all the gate wirings 76 of the radiation detector 60.
  • All the TFTs 70 of the radiation detector 60 are turned off. As a result, the accumulation of electric charges in the storage capacitors 68 of the individual pixel units 74 of the radiation detector 60 (and between the upper electrode 72A and the lower electrode 72B of the photoelectric conversion unit 72) is started.
  • step 264 it is determined whether or not the designated shooting mode is a moving image shooting mode. If the designated photographing mode is the still image photographing mode, the determination is negative and the routine proceeds to step 266, where the radiation dose detection value is acquired from each sensor unit 146 of the radiation detection unit 62. In step 268, it is determined whether or not the radiation dose detection value acquired from each sensor unit 146 is 0 or a value close to 0. This determination determines whether or not the emission of radiation from the radiation source 130 is stopped. If the determination is negative, the process proceeds to step 270 and the radiation dose detection value (for example, acquired in step 266) (for example, (Average value of radiation dose acquired from each sensor unit 146) is added to the cumulative value of radiation dose.
  • the radiation dose detection value for example, acquired in step 266) (for example, (Average value of radiation dose acquired from each sensor unit 146) is added to the cumulative value of radiation dose.
  • step 272 it is determined whether or not the cumulative dose of radiation has reached or exceeded the upper limit value received from the console 42. If this determination is also negative, the process returns to step 266, and steps 266 to 272 are repeated until the determination of step 268 or step 272 is affirmed.
  • the radiation generation apparatus 34 In the still image capturing mode, when the exposure end timing arrives, the radiation generation apparatus 34 is instructed to end the emission of radiation from the console 42, and the radiation generation apparatus 34 stops the emission of radiation from the radiation source 130. In this case, by stopping irradiation of radiation to the electronic cassette 32, the determination in step 268 is affirmed and the process proceeds to step 276, and the TFTs 70 of the radiation detector 60 are sequentially turned on in units of gate wirings 76, The charges accumulated in the storage capacitor 68 of each pixel unit 74 (and between the upper electrode 72A and the lower electrode 72B of the photoelectric conversion unit 72) are sequentially read out as a radiographic image signal. In step 278, the radiographic image data obtained by the charge readout in step 276 is transmitted to the console 42 by wireless communication, and the imaging control process ends.
  • step 272 determines whether the cumulative dose of radiation reaches the upper limit before the end of exposure timing. If the cumulative dose of radiation reaches the upper limit before the end of exposure timing, the determination at step 272 is affirmed before the determination at step 268 is affirmed, and the routine proceeds to step 274. Then, a signal for instructing the end of the exposure is transmitted to the console 42 by wireless communication. As a result, the console 42 instructs the radiation generator 34 to end the emission of radiation, and the radiation generator 34 stops the emission of radiation from the radiation source 130. Thereby, the shooting of the still image is stopped. In step 276, charge is read from each pixel unit 74 of the radiation detector 60. In step 278, radiation image data is transmitted to the console 42, and the imaging control process is terminated.
  • step 264 the determination in step 264 is affirmed, and the process proceeds to step 280.
  • the radiation from each sensor unit 146 of the radiation detecting unit 62 it is determined whether the acquired radiation dose detection value is 0 or a value close to 0 (step 282), and if the determination is negative, the acquired radiation irradiation
  • the amount detection value is added to the radiation dose cumulative value (step 284), and it is determined whether the radiation dose cumulative value is equal to or greater than the upper limit value received from the console 42 (step 286).
  • step 286 determines whether the determination in step 286 is negative. If the determination in step 286 is negative, the process proceeds to step 288, and the elapsed time since the start of imaging (after the charge readout from each pixel portion 74 of the radiation detector 60 has been performed, the previous charge Whether or not the timing for reading the charge from each pixel unit 74 of the radiation detector 60 has arrived based on whether or not the elapsed time since reading has reached a time corresponding to the imaging cycle set in the previous step 254. Determine. If this determination is negative, the process returns to step 280, and step 280 to step 288 are repeated until the determination of any of step 282, step 286, and step 288 is affirmed.
  • step 288 determines whether the charge read timing arrives. If the charge read timing arrives, the determination in step 288 is affirmed and the process proceeds to step 290, where charge is read from each pixel unit 74 of the radiation detector 60 in the same manner as in step 276 described above. At 292, the radiation image data is transmitted to the console 42 and the process returns to step 280.
  • the photographer gives an instruction to end shooting (end of exposure) via the operation panel 102, whereby the console 42 instructs the radiation generator 34 to end radiation emission, and the radiation generator 34
  • the emission of radiation from the radiation source 130 is stopped.
  • the irradiation of the electronic cassette 32 is stopped, so that the determination in step 282 is affirmed, and the imaging control process ends.
  • step 286 is made before the determination in step 282 is affirmed.
  • step 274 a signal instructing the end of exposure is transmitted to the console 42 by wireless communication, and the imaging control process is terminated.
  • the console 42 instructs the radiation generation apparatus 34 to end the emission of radiation, and the radiation generation apparatus 34 stops the emission of radiation from the radiation source 130, thereby stopping the moving image capturing.
  • the console 42 may perform processing for displaying a warning on the display 100, or the console 42 may reduce at least one of the tube voltage and the tube current with respect to the radiation generator 34.
  • the radiation dose per unit time irradiated from the radiation source 130 may be reduced by instructing the change to the exposure condition.
  • a scintillator 71 made of a material that does not require vapor deposition (for example, GOS) is disposed on one surface of the radiation detector 60 as shown schematically in FIG.
  • a radiation detector 62 is provided on the other surface of the detector 60, a partially reflective layer 170 is provided between the radiation detector 60 and the radiation detector 62, and a total reflection layer is provided on the opposite side of the scintillator 71 from the radiation detector 60 side.
  • the radiation detector 60 (first detection unit) detects light emitted from the scintillator 71 (light emitting unit) as an image and detects the radiation.
  • the unit 62 (second detection unit) detects light emitted from the scintillator 71 (light emitting unit).
  • the radiation detector 60 is arranged on the radiation irradiation surface side of the scintillator 71.
  • the method of arranging the light emitting unit (scintillator) and the light detecting unit (radiation detector) in such a positional relationship is “surface”. This is referred to as “reading method (ISS: Irradiation Side Sampling)”.
  • the ⁇ surface reading method (ISS) '' in which the light detection unit (radiation detector) is arranged on the radiation incident side of the scintillator is the opposite side to the radiation irradiation surface of the light emission unit (scintillator) Since the light detection unit and the light emission position of the scintillator are closer to each other than the “backside scanning method (PSS: Penetration Side Sampling)” in which the light detection unit (radiation detector) is placed on Further, the sensitivity of the radiation detection panel (electronic cassette) is improved as a result by increasing the amount of light received by the light detection unit (radiation detector) (corresponding to an example of the fifth aspect of the present invention).
  • PSS Penetration Side Sampling
  • the positional relationship between the scintillator 71 and the radiation detector 60 is “surface reading method”, in addition to the configuration shown in FIG. 10B and 10D can be considered.
  • the configuration shown in FIG. 10A is the same as the configuration shown in FIG. 10C in the positional relationship between the scintillator 71, the radiation detector 60, the radiation detection unit 62, the partial reflection layer 170, and the total reflection layer 172, but is supported by the radiation detection unit 62.
  • the radiation detector 60 is affixed to the surface opposite to the scintillator 71 via the partial reflection layer 170.
  • the thickness is increased by the thickness of the base 120 as compared with the configuration shown in FIG. 10C.
  • the thickness of the base 120 itself can be suppressed to about 0.1 mm, for example.
  • the radiation detector 60 transmits the radiation detector 60 out of the light emitted from the scintillator 71 to the radiation detector 60 side, in addition to the light directly incident from the scintillator 71, and the partially reflective layer.
  • the light reflected by 170 is also re-incident, emitted from the scintillator 71 to the side opposite to the radiation detector 60 side, reflected by the total reflection layer 172, and also transmitted through the scintillator 71, so that the partially reflective layer 170 is also incident.
  • the amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.
  • a total reflection layer 173 may be added between the radiation detection unit 62 and the base 120 (FIG. 10A). 14A).
  • the light transmitted through the radiation detection unit 62 is totally reflected by the total reflection layer 173 and emitted.
  • the total reflection layer 173 in the configuration shown in FIG. 14A is an example of a total reflection portion according to the eighth aspect of the present invention.
  • the total reflection layer 173 may be provided on the surface of the base 120 opposite to the radiation detection unit 62 instead of the position shown in FIG. 14A.
  • the radiation detector 60 is disposed on one surface of the scintillator 71, and the base 120 on which the radiation detector 62 is formed is disposed on the other surface side of the scintillator 71.
  • a partial reflection layer 170 is provided between the scintillator 71 and the base 120 so that the back surface (surface opposite to the surface on which the radiation detection unit 62 is formed) is arranged.
  • the partial reflection layer 170 in this configuration is an example of a partial reflection unit “arranged between the light emitting unit and the second detection unit”.
  • the positional relationship between the scintillator 71 and the radiation detection unit 62 is the “rear surface reading method”, and the amount of light received by the radiation detection unit 62 decreases, but the radiation detection unit 62 detects the irradiation timing and the irradiation amount of radiation. Therefore, for example, it is possible to adopt a configuration in which the arrangement pitch of the sensor units 146 is increased and the area of the light receiving region of each sensor unit 146 is increased (for example, 1 cm ⁇ 1 cm or more). Therefore, it is possible to compensate for a decrease in sensitivity due to a decrease in the amount of received light.
  • the radiation detector 60 in addition to the light directly incident from the scintillator 71, the radiation detector 60 is emitted from the scintillator 71 to the side opposite to the radiation detector 60 side, reflected by the partial reflection layer 170, and transmitted through the scintillator 71. Therefore, the amount of light received by the radiation detector 60 is increased as compared with the case where the partial reflection layer 170 is not provided, and the sensitivity of image detection by the radiation detector 60 is improved.
  • a total reflection layer 173 may be added to the radiation detector 60 on the side opposite to the scintillator 71 side.
  • a total reflection layer 174 may be added on the opposite side of the radiation detection unit 62 from the scintillator 71 side (see FIG. 14B). .
  • the light that has entered the radiation detector 60 from the scintillator 71 side and has passed through the radiation detector 60 is reflected by the total reflection layer 173 and re-entered, and thus the total reflection layer 173 is provided.
  • the amount of light received by the radiation detector 60 is increased as compared with the case where there is no image sensor, and the sensitivity of image detection by the radiation detector 60 is improved.
  • the total reflection layer 174 is not provided.
  • the total reflection layer 173 in the configuration shown in FIG. 14B is an example of the total reflection part according to the seventh aspect of the present invention
  • the total reflection layer 174 is an example of the total reflection part according to the eighth aspect of the present invention. is there.
  • FIG. 10D The configuration shown in FIG. 10D is similar to the configuration shown in FIG. 10B in that a radiation detection unit 63 having the same configuration as the radiation detection unit 62 is arranged on the opposite side of the scintillator 71 with the radiation detector 60 interposed therebetween. A partial reflection layer 170 is also provided between the detector 60 and the radiation detection unit 63.
  • the thickness is increased by the thickness of the radiation detection unit 63 compared to the configuration illustrated in FIG. 10B, but the thickness of the radiation detection unit 63 is, for example, about 0.05 mm, as in the radiation detection unit 62.
  • the two radiation detection units 62 and 63 may be used for the purpose of improving the sensitivity of the radiation detection unit as a whole, for example, by adding and using the respective irradiation amount detection values.
  • This radiation detection unit may be used for detection of the irradiation timing of the radiation to the electronic cassette 32, and the other radiation detection unit may be used for detection of the radiation irradiation amount to the electronic cassette 32.
  • the radiation detection unit used for detecting the irradiation timing of radiation is electrostatically controlled so as to improve the response speed. While adjusting the capacitance and the wiring resistance, it is possible to adjust the area of the light receiving region so that the sensitivity of the radiation detecting unit used for detecting the radiation dose is improved.
  • the radiation detector 60 in addition to the light directly incident from the scintillator 71, the radiation detector 60 is emitted from the scintillator 71 to the side opposite to the radiation detector 60 side, reflected by the partial reflection layer 170, and transmitted through the scintillator 71. Since the incident light is also incident, the light is incident from the scintillator 71, passes through the radiation detector 60, and is reflected again by the partial reflection layer 170, the partial reflection layer 170 is not provided. The amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.
  • the total reflection layer 173 is disposed on the opposite side of the radiation detector 62 from the scintillator 71 side. 63, a total reflection layer 174 may be added to the side opposite to the scintillator 71 side (see FIG. 14D).
  • the light that enters the radiation detector 62 from the scintillator 71 side and passes through the radiation detector 62 is also reflected by the total reflection layer 173 and re-entered, so the total reflection layer 173 is provided.
  • the amount of light received by the radiation detection unit 62 is increased as compared with the case where there is not, and the sensitivity of radiation detection by the radiation detection unit 62 is improved.
  • the light that has entered the radiation detection unit 63 from the scintillator 71 side and has passed through the radiation detection unit 63 is reflected by the total reflection layer 174 and re-entered, and thus the total reflection layer 174 is not provided.
  • the amount of light received by the radiation detection unit 63 is increased compared to the case, and the sensitivity of radiation detection by the radiation detection unit 63 is improved.
  • the total reflection layers 173 and 174 in the configuration illustrated in FIG. 14D are examples of the total reflection unit according to the eighth aspect of the present invention.
  • a total reflection layer 173 is added to the radiation detection unit 62 on the side opposite to the scintillator 71 side. Good habit (see FIG. 14C).
  • the light that enters the radiation detector 62 from the scintillator 71 side and passes through the radiation detector 62 is also reflected by the total reflection layer 173 and re-entered, so the total reflection layer 173 is provided.
  • the amount of light received by the radiation detection unit 62 is increased as compared with the case where there is not, and the sensitivity of radiation detection by the radiation detection unit 62 is improved.
  • the total reflection layer 173 in the configuration illustrated in FIG. 14D is an example of a total reflection unit according to the eighth aspect of the present invention.
  • FIGS. 11A to 11D is a configuration of a radiation detection panel using a scintillator that is made of a material that does not require vapor deposition, in which the positional relationship between the scintillator 71 and the radiation detector 60 is a “rear surface reading method”. Conceivable.
  • the configuration shown in FIG. 11A is the same as the configuration shown in FIG. 10B, and radiation arrives from the opposite direction to the configuration shown in FIG. 10B.
  • the radiation detection unit 62 is positioned at the uppermost stream in the radiation arrival direction.
  • the scintillator is disposed even if the radiation detection unit 62 is disposed at the above position. No reduction in the amount of radiation applied to 71 occurs.
  • the positional relationship between the scintillator 71 and the radiation detector 60 is the “rear surface reading method”, the amount of light received by the radiation detector 60 is lower than that of the “front surface reading method”.
  • the light that is emitted from the scintillator 71 to the side opposite to the radiation detector 60, reflected by the partial reflection layer 170, and transmitted through the scintillator 71 is also incident.
  • the amount of light received by the radiation detector 60 is increased as compared with the case where 170 is not provided, and the sensitivity of image detection by the radiation detector 60 is improved. Accordingly, the provision of the partial reflection layer 170 can compensate for a decrease in the amount of light received by the radiation detector 60.
  • a total reflection layer 173 may be added to the side of the radiation detector 60 opposite to the scintillator 71 side. Good (see FIG. 15A).
  • the light that has entered the radiation detector 60 from the scintillator 71 side and has passed through the radiation detector 60 is reflected by the total reflection layer 173 and re-entered, and thus the total reflection layer 173 is provided.
  • the amount of light received by the radiation detector 60 is increased as compared with the case where there is no image sensor, and the sensitivity of image detection by the radiation detector 60 is improved.
  • the total reflection layer 173 in the configuration shown in FIG. 15A is an example of a total reflection portion according to the seventh aspect of the present invention.
  • the configuration shown in FIG. 11B is the same as the configuration shown in FIG. 10A, and radiation comes from the opposite direction to the configuration shown in FIG. 10A. Since the radiation detector 60 in this configuration has a positional relationship with the scintillator 71 of the “rear surface reading method”, the amount of received light is lower than that of the “front surface reading method”. In addition to the light that is directly incident from the scintillator 71, the light that has been transmitted from the scintillator 71 to the radiation detector 60 side and transmitted through the radiation detector 60 and reflected by the partial reflection layer 170 is also re-incident.
  • the partial reflection layer 170 and the total reflection layer 172 are not provided. As a result, the amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved. Therefore, by providing the partial reflection layer 170 and the total reflection layer 172, it is possible to compensate for a decrease in the amount of light received by the radiation detector 60.
  • the positional relationship with the scintillator 71 is “rear surface reading method”, and light transmitted through the radiation detector 60 and the partial reflection layer 170 is incident. Although the amount of received light is reduced, the radiation detection unit 62 detects the irradiation timing and the amount of radiation. Therefore, for example, the arrangement pitch of the sensor units 146 is increased, and the area of the light receiving region of each sensor unit 146 is increased. It is possible to adopt a configuration such as increasing (for example, 1 cm ⁇ 1 cm or more), and this makes it possible to compensate for a decrease in sensitivity accompanying a decrease in the amount of received light.
  • a total reflection layer 173 may be added between the radiation detection unit 62 and the base 120 (FIG. 11B). 15B).
  • the light transmitted through the radiation detection unit 62 is totally reflected by the total reflection layer 173 and emitted.
  • the total reflection layer 173 in the configuration illustrated in FIG. 15B is an example of a total reflection unit according to the eighth aspect of the present invention. Further, the total reflection layer 173 may be provided on the surface of the base 120 opposite to the radiation detection unit 62 instead of the position shown in FIG. 15B.
  • the configuration shown in FIG. 11C is the same as the configuration shown in FIG. 10C, and radiation comes from the opposite direction to the configuration shown in FIG. 10C.
  • the radiation detector 60 in this configuration also has a light receiving amount lower than that of the “front scanning method” because the positional relationship with the scintillator 71 is “back scanning method”.
  • the radiation detector 60 transmits the radiation detector 60 out of the light emitted from the scintillator 71 to the radiation detector 60 side.
  • the reflected light is also re-incident, emitted from the scintillator 71 to the side opposite to the radiation detector 60 side, reflected by the total reflection layer 172, and also transmitted through the scintillator 71.
  • the amount of light received by the radiation detector 60 is increased as compared with the case where the reflective layer 172 is not provided, and the sensitivity of image detection by the radiation detector 60 is improved. Therefore, by providing the partial reflection layer 170 and the total reflection layer 172, it is possible to compensate for a decrease in the amount of light received by the radiation detector 60.
  • the radiation detection unit 62 in the configuration illustrated in FIG. 11C is similar to the configuration illustrated in FIG. 11B in that the positional relationship with the scintillator 71 is the “rear surface reading method”, and the radiation detector 60 and the partial reflection layer 170.
  • the arrangement pitch of the sensor units 146 is increased to individually It is possible to adopt a configuration such as increasing the area of the light receiving region of the sensor unit 146 (for example, 1 cm ⁇ 1 cm or more), thereby compensating for a decrease in sensitivity due to a decrease in the amount of received light. This configuration is desirable because the thickness can be minimized among the configurations shown in FIGS. 11A to 11D.
  • a total reflection layer 173 is added on the opposite side of the radiation detection unit 62 from the radiation detector 60. It is also possible (see FIG. 15C). In this case, out of the light transmitted from the scintillator 71 through the radiation detector 60 and the partial reflection layer 170 and incident on the radiation detection unit 62, the light transmitted through the radiation detection unit 62 is totally reflected by the total reflection layer 173 and emitted. By re-entering the detection unit 62, the amount of light received by the radiation detection unit 62 increases, and the radiation detection sensitivity of the radiation detection unit 62 is improved.
  • the total reflection layer 173 in the configuration shown in FIG. 15C is an example of a total reflection portion according to the eighth aspect of the present invention.
  • the configuration shown in FIG. 11D is the same as the configuration shown in FIG. 10D, and radiation comes from the opposite direction to the configuration shown in FIG. 10D.
  • the two radiation detection units 62 and 63 improve the sensitivity of the entire radiation detection unit, for example, by adding and using the respective irradiation amount detection values. It may be used for the purpose, or one of the radiation detectors may be used for detecting the irradiation timing of the radiation to the electronic cassette 32, and the other radiation detector may be used for detecting the radiation dose to the electronic cassette 32. .
  • the radiation detector 60 in addition to the light directly incident from the scintillator 71, the radiation detector 60 is emitted from the scintillator 71 to the side opposite to the radiation detector 60 side, reflected by the partial reflection layer 170, and transmitted through the scintillator 71. Since the incident light is also incident, the light is incident from the scintillator 71, passes through the radiation detector 60, and is reflected again by the partial reflection layer 170, the partial reflection layer 170 is not provided. The amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.
  • the total reflection layer 173 is disposed on the opposite side of the radiation detection unit 62 from the scintillator 71 side, and the radiation detection unit. 63, a total reflection layer 174 may be added to the side opposite to the scintillator 71 side (see FIG. 15D).
  • the light that enters the radiation detector 62 from the scintillator 71 side and passes through the radiation detector 62 is also reflected by the total reflection layer 173 and re-entered, so the total reflection layer 173 is provided.
  • the amount of light received by the radiation detection unit 62 is increased as compared with the case where there is not, and the sensitivity of radiation detection by the radiation detection unit 62 is improved.
  • the light that has entered the radiation detection unit 63 from the scintillator 71 side and has passed through the radiation detection unit 63 is reflected by the total reflection layer 174 and re-entered, and thus the total reflection layer 174 is not provided.
  • the amount of light received by the radiation detection unit 63 is increased compared to the case, and the sensitivity of radiation detection by the radiation detection unit 63 is improved.
  • the total reflection layers 173 and 174 in the configuration illustrated in FIG. 15D are examples of the total reflection unit according to the eighth aspect of the present invention.
  • the radiation detection panel using the scintillator formed by vapor-depositing a material such as CsI on the vapor deposition substrate 122 in which the positional relationship between the scintillator 71 and the radiation detector 60 is “surface reading method”.
  • the configurations shown in FIGS. 12A to 12D are conceivable.
  • the configuration shown in FIG. 12A is different from the configuration shown in FIG. 10A in that the vapor deposition substrate 122 is disposed on the opposite side of the radiation detector 60 with the scintillator 71 interposed therebetween. Also in this configuration, since the light reflected by the partial reflection layer 170 is incident again on the radiation detector 60, the light reflected by the total reflection layer 172 and transmitted through the scintillator 71 is also incident on the radiation detector 60. The amount of light received by the detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.
  • a total reflection layer 173 may be added between the radiation detection unit 62 and the base 120 (FIG. 16A). reference). Thereby, the light totally reflected by the total reflection layer 173 is re-incident on the radiation detection unit 62, whereby the amount of light received by the radiation detection unit 62 is increased, and the radiation detection sensitivity of the radiation detection unit 62 is improved.
  • the total reflection layer 173 in the configuration illustrated in FIG. 16A is an example of a total reflection unit according to the eighth aspect of the present invention.
  • the total reflection layer 173 may be provided on the opposite side of the base 120 from the radiation detection unit 62 instead of the position shown in FIG. 16A.
  • the configuration shown in FIG. 12B is different from the configuration shown in FIG. 10B in that the vapor deposition substrate 122 is disposed between the scintillator 71 and the base 120.
  • the vapor deposition substrate 122 is used as a vapor deposition substrate in terms of radiation transmittance and cost. It is necessary to use a substrate having optical transparency instead of an Al substrate or the like that is frequently used.
  • Examples of substrates that can be used for vapor deposition and have optical transparency include glass substrates, but other than that, aromatic polyimide is used as a raw material, and shows high optical transparency in the visible light range, and also has excellent heat resistance.
  • Transparent plastic substrates for transparent displays with transparent polyimide substrates for example, heat-resistant temperature of about 300 ° C or higher
  • excellent optical properties for example, light transmittance of 90% or higher
  • heat resistance for example, 200 ° C or higher
  • Substrate material development name: OPS
  • OPS Tosoh Corp., “Development of transparent plastic substrate material for flexible display”, [online], [Search July 27, 2010], Internet ⁇ URL: http: // www .tosoh.co.jp / technology / report / pdfs / 2006_03_02.pdf>
  • Aramid film Toray Industries, Inc., “Halogen-free difficulty” Flammable colorless and transparent aramidov Rum is developed ", [online], [searched July 27, 2010], Internet ⁇ URL
  • a total reflection layer 173 is added to the radiation detector 60 on the side opposite to the scintillator 71 side, and the radiation detection unit When 62 has optical transparency, a total reflection layer 174 may be added to the radiation detection unit 62 on the side opposite to the scintillator 71 side (see FIG. 16B).
  • the total reflection layer 173 in the configuration shown in FIG. 16B is an example of the total reflection part according to the seventh aspect of the present invention
  • the total reflection layer 174 is an example of the total reflection part according to the eighth aspect of the present invention.
  • the configuration shown in FIG. 12C is different from the configuration shown in FIG. 10C in that the vapor deposition substrate 122 is disposed on the opposite side of the radiation detector 60 with the scintillator 71 interposed therebetween. Also in this configuration, since the light reflected by the partial reflection layer 170 is incident again on the radiation detector 60, the light reflected by the total reflection layer 172 and transmitted through the scintillator 71 is also incident on the radiation detector 60. The amount of light received by the detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved. This configuration is desirable because the thickness can be minimized among the configurations shown in FIGS. 12A to 12D.
  • a total reflection layer 173 may be added on the opposite side of the radiation detection unit 62 from the scintillator 71 side. (See FIG. 16C). Thereby, since the light reflected by the total reflection layer 173 is re-incident on the radiation detection unit 62, the amount of light received by the radiation detection unit 62 is increased, and the sensitivity of radiation detection by the radiation detection unit 62 is improved.
  • the total reflection layer 173 in the configuration illustrated in FIG. 16C is an example of a total reflection unit according to the eighth aspect of the present invention.
  • the configuration shown in FIG. 12D is different from the configuration shown in FIG. 10D in that the vapor deposition substrate 122 is disposed between the scintillator 71 and the base 120. Also in this configuration, similarly to the configuration shown in FIG. 12B, the light emitted from the scintillator 71 passes through the vapor deposition substrate 122 and the base 120 and then enters the radiation detection unit 62. Therefore, the above-described glass is used as the vapor deposition substrate 122. It is necessary to use a substrate or another substrate having optical transparency.
  • the two radiation detection units 62 and 63 in this configuration may be used for the purpose of improving the sensitivity of the radiation detection unit as a whole, as in the configuration shown in FIGS.
  • the radiation detection units May be used for detecting the irradiation timing of the radiation to the electronic cassette 32, and the other radiation detection unit may be used for detecting the amount of radiation irradiation to the electronic cassette 32.
  • the light that is emitted from the scintillator 71 to the vapor deposition substrate 122 side, reflected by the partial reflection layer 170 and transmitted through the scintillator 71, and the light that passes through the radiation detector 60 and reflected by the partial reflection layer 170 are reflected. Since the light is incident on the radiation detector 60, the amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.
  • the total reflection layer 173 is disposed on the opposite side of the radiation detector 62 to the scintillator 71 side, and the radiation detector A total reflection layer 174 may be added to the opposite side of the scintillator 71 of 63 (see FIG. 16D).
  • the light reflected by the total reflection layer 173 is incident on the radiation detection unit 62, and the light reflected by the total reflection layer 174 is incident on the radiation detection unit 63.
  • the amount of received light increases, and the sensitivity of radiation detection by the radiation detectors 62 and 63 is improved.
  • the total reflection layers 173 and 174 in the configuration illustrated in FIG. 16D are examples of the total reflection unit according to the eighth aspect of the present invention.
  • FIGS. 13D A configuration of a radiation detection panel using a scintillator formed by vapor-depositing a material such as CsI on the vapor deposition substrate 122 in which the positional relationship between the scintillator 71 and the radiation detector 60 is “rear surface reading method” is shown in FIGS.
  • the configuration shown in FIG. 13D is conceivable.
  • the configuration shown in FIG. 13A is the same as the configuration shown in FIG. 12B, and radiation arrives from the opposite direction to the configuration shown in FIG. 12B. Also in this configuration, since the light emitted from the scintillator 71 is incident on the radiation detection unit 62 after passing through the vapor deposition substrate 122 and the base 120, the vapor deposition substrate 122 has the above-described glass substrate and other light transmission properties. It is necessary to use a substrate. Also in this configuration, since the light reflected by the partial reflection layer 170 and transmitted through the scintillator 71 is also incident on the radiation detector 60, the amount of light received by the radiation detector 60 increases, and image detection by the radiation detector 60 is performed. The sensitivity is improved.
  • a total reflection layer 173 is added to the radiation detector 60 on the side opposite to the scintillator 71 side, and the radiation detection unit
  • a total reflection layer 174 may be added on the side opposite to the scintillator 71 side of the radiation detection unit 62 (see FIG. 17A).
  • the total reflection layer 173 in the configuration shown in FIG. 17A is an example of the total reflection part according to the seventh aspect of the present invention
  • the total reflection layer 174 is an example of the total reflection part according to the eighth aspect of the present invention.
  • the configuration shown in FIG. 13B is the same as the configuration shown in FIG. 12A, and radiation comes from the opposite direction to the configuration shown in FIG. 12A. Also in this configuration, since the light reflected by the partial reflection layer 170 is incident again on the radiation detector 60, the light reflected by the total reflection layer 172 and transmitted through the scintillator 71 is also incident on the radiation detector 60. The amount of light received by the detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved. Further, in this configuration, the positional relationship between the scintillator 71 and the radiation detection unit 62 is the “rear surface reading method”, and light transmitted through the radiation detector 60 and the partial reflection layer 170 is incident on the radiation detection unit 62.
  • the amount of light received by the radiation detection unit 62 decreases, but the arrangement pitch of the sensor units 146 of the radiation detection unit 62 is increased, and the area of the light reception region of each sensor unit 146 is increased (for example, 1 cm ⁇ 1 cm or more).
  • the area of the light reception region of each sensor unit 146 is increased (for example, 1 cm ⁇ 1 cm or more).
  • a total reflection layer 173 may be added between the radiation detection unit 62 and the base 120 (FIG. 17B). reference). Thereby, the light totally reflected by the total reflection layer 173 is re-incident on the radiation detection unit 62, whereby the amount of light received by the radiation detection unit 62 is increased, and the radiation detection sensitivity of the radiation detection unit 62 is improved.
  • the total reflection layer 173 in the configuration shown in FIG. 17B is an example of a total reflection portion according to the eighth aspect of the present invention.
  • the total reflection layer 173 may be provided on the opposite side of the base 120 from the radiation detection unit 62 instead of the position shown in FIG. 17B.
  • the configuration shown in FIG. 13C is the same as the configuration shown in FIG. 12C, and radiation comes from the opposite direction to the configuration shown in FIG. 12C.
  • This configuration is desirable because the thickness can be minimized among the configurations shown in FIGS. 13A to 13D. Also in this configuration, since the light reflected by the partial reflection layer 170 is incident again on the radiation detector 60, the light reflected by the total reflection layer 172 and transmitted through the scintillator 71 is also incident on the radiation detector 60. The amount of light received by the detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.
  • the positional relationship between the scintillator 71 and the radiation detection unit 62 is the “rear surface reading method” and the light transmitted through the radiation detector 60 and the partial reflection layer 170 is similar to the configuration shown in FIG. 13B.
  • the arrangement pitch of the sensor units 146 of the radiation detection unit 62 is increased, and the area of the light reception region of each sensor unit 146 is increased. (For example, 1 cm ⁇ 1 cm or more) or the like can compensate for a decrease in sensitivity due to a decrease in the amount of received light.
  • a total reflection layer 173 may be added on the opposite side of the radiation detection unit 62 from the scintillator 71 side. (See FIG. 17C). Thereby, since the light reflected by the total reflection layer 173 is re-incident on the radiation detection unit 62, the amount of light received by the radiation detection unit 62 is increased, and the sensitivity of radiation detection by the radiation detection unit 62 is improved.
  • the total reflection layer 173 in the configuration illustrated in FIG. 17C is an example of the total reflection unit according to the eighth aspect of the present invention.
  • the configuration shown in FIG. 13D is the same as the configuration shown in FIG. 12D, and radiation comes from the opposite direction to the configuration shown in FIG. 12D.
  • the two radiation detection units 62 and 63 similarly to the configuration illustrated in FIG. 12D, add and use the respective irradiation amount detection values to improve the sensitivity of the entire radiation detection unit. It may be used for the purpose, or one of the radiation detectors may be used for detecting the irradiation timing of the radiation to the electronic cassette 32, and the other radiation detector may be used for detecting the radiation dose to the electronic cassette 32. .
  • the light that is emitted from the scintillator 71 to the vapor deposition substrate 122 side, reflected by the partial reflection layer 170 and transmitted through the scintillator 71, and the light that passes through the radiation detector 60 and reflected by the partial reflection layer 170 are reflected. Since the light is incident on the radiation detector 60, the amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.
  • the total reflection layer 173 is disposed on the opposite side of the radiation detection unit 62 from the scintillator 71 side, and the radiation detection unit.
  • a total reflection layer 174 may be added to 63 on the side opposite to the scintillator 71 side (see FIG. 17D).
  • the light reflected by the total reflection layer 173 is incident on the radiation detection unit 62, and the light reflected by the total reflection layer 174 is incident on the radiation detection unit 63.
  • the amount of received light increases, and the sensitivity of radiation detection by the radiation detectors 62 and 63 is improved.
  • the total reflection layers 173 and 174 in the configuration shown in FIG. 17D are an example of the total reflection unit according to the eighth aspect of the present invention.
  • an organic CMOS sensor having a photoelectric conversion film made of a material containing an organic photoelectric conversion material may be used.
  • a TFT substrate of the radiation detector 60 an organic material as the TFT 70 may be used.
  • an organic TFT array sheet in which organic transistors including the above are arranged in an array on a flexible sheet may be used.
  • the above organic CMOS sensor is disclosed in, for example, Japanese Patent Application Laid-Open No. 2009-212377.
  • the TFT 70 or the like of the radiation detector 60 does not have optical transparency (for example, an active layer 70B formed of a material having no optical transparency such as amorphous silicon),
  • a transparent insulating substrate 64 for example, a flexible substrate made of synthetic resin
  • a portion of the insulating substrate 64 where the TFT 70 or the like is not formed is configured to transmit light. It is possible to obtain a radiation detector 60 having optical transparency.
  • Arranging the TFT 70 or the like having a non-light-transmitting configuration on the light-transmitting insulating substrate 64 separates the micro device block formed on the first substrate from the first substrate. It can be realized by applying the technology arranged above, specifically, for example, FSA (Fluidic Self-Assembly).
  • FSA Fluid Self-Assembly
  • the radiation detector 60 By making the radiation detector 60 light transmissive as described above, a configuration in which the radiation detector 62 (or the radiation detector 63) is arranged on the opposite side of the scintillator 71 with the radiation detector 60 in between (for example, FIG. 10A, 10C, 10D, 11B, 11C, 11D, 12A, 12C, 12D, 13B, 13C, 13D, 14A, 14C, 14D, 15B, 15C, 15D, FIG. 16A, FIG. 16C, FIG. 16D, FIG. 17B, FIG. 17C, and FIG. 17D), a part of the light emitted from the scintillator 71 passes through the radiation detector 60 and passes through the radiation detector 62 (or It can be configured to be incident on the radiation detector 63).
  • the radiation detector 60 does not have optical transparency (for example, when the insulating substrate 64 is a substrate including silicon that absorbs light in a wavelength region including the visible region and the infrared region), A configuration in which the detection unit 62 (or the radiation detection unit 63) is disposed on the opposite side of the radiation detector 60 with the scintillator 71 interposed therebetween (for example, FIGS. 10B, 11A, 12B, 13A, 14B, 15A, and 16B). 17A), a part of the light emitted from the scintillator 71 can be incident on the radiation detection unit 62 (or the radiation detection unit 63).
  • the partial reflection layer 170 having a substantially uniform desired light reflectance over the entire surface has been described as an example.
  • the partial reflection portion according to the present invention is not limited to the above-described configuration.
  • a part of the in-plane film is removed (providing a region having a light transmittance of 100%)
  • the configuration may be adopted. In this case, the in-plane light reflectivity is uneven, but by adjusting the area of the region from which the film is removed, the light reflectivity (light transmittance) of the partial reflection unit as a whole becomes a desired value. Can be configured.
  • each sensor part 146 of the radiation detection part 62 for the detection of the irradiation timing of a radiation and the detection of a radiation dose was demonstrated above, it is not limited to this,
  • the radiation detection part 62 The sensor unit 146 is divided into two groups, the output signal from one sensor unit group is used for detection of radiation irradiation timing, and the output signal from one sensor unit group is used for detection of radiation dose. Good. Further, characteristics (for example, response speed and sensitivity) may be made different for each sensor unit group according to the use of the output signal.
  • the configuration in which the electronic cassette 32 has a function of directly communicating with the console 42 wirelessly has been described above.
  • the electronic cassette 32 only detects the radiation irradiation timing, and detects the radiation irradiation amount (radiation irradiation amount).
  • the function of monitoring whether or not the cumulative value has reached the upper limit value and not performing the process of notifying the console 42 if the cumulative value has reached the upper limit value is omitted from the function of the electronic cassette 32 communicating directly with the console 42 by radio. If the function is omitted, the radiographic image data is transferred to the console 42 by, for example, when the electronic cassette 32 is set in the cradle, the cradle reads out the radiographic image data from the electronic cassette 32 and the console 42. This can be achieved by configuring the cradle to transmit to. Further, the transfer of the radiation image data from the electronic cassette 32 to the console 42 can be performed offline using a memory card or the like.

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Abstract

L'invention concerne un panneau détecteur de rayonnement ayant une structure qui, tout en étant dotée d'une fonctionnalité lui permettant de détecter un rayonnement d'une manière distincte d'une fonctionnalité permettant de détecter un rayonnement sous la forme d'une image, ne conduit pas à une taille de panneau ou à une épaisseur importante, et dont la sensibilité de détection d'image n'est pas réduite. Le panneau de détection de rayonnement décrit comprend : un scintillateur (71) qui absorbe le rayonnement et émet de la lumière ; et un détecteur de rayonnement (60), formé en agençant des pixels élémentaires (74) selon la forme d'une matrice sur un substrat isolant (64), lesdits pixels élémentaires étant munis d'une unité de conversion photoélectrique (72) qui convertit la lumière émise par le scintillateur (71) en une charge électrique, d'un condensateur de stockage (68) qui stocke la charge électrique, et d'un transistor TFT (70) qui est rendu passant pendant la lecture de la charge électrique. Le panneau est en outre muni d'une unité de détection de rayonnement (62) qui confère au substrat isolant (64) une perméabilité à la lumière, entoure le détecteur de rayonnement (60) du côté opposé au scintillateur (71) (côté amont dans la direction d'incidence du rayonnement), est formé à partir d'un matériau de conversion photoélectrique organique, et convertit la lumière émise par le scintillateur (71) en signaux électriques et délivre le résultat ; et d'une couche de réflexion partielle (170) qui est disposée entre le détecteur de rayonnement (60) et l'unité de détection de rayonnement (62).
PCT/JP2011/059950 2010-07-30 2011-04-22 Panneau détecteur de rayonnement Ceased WO2012014543A1 (fr)

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GB2516034A (en) * 2013-07-08 2015-01-14 Plastic Logic Ltd Radiation imaging
JP2017090163A (ja) * 2015-11-06 2017-05-25 株式会社ブイ・テクノロジー 放射線画像撮像素子
WO2019181569A1 (fr) * 2018-03-19 2019-09-26 富士フイルム株式会社 Détecteur de rayonnement, dispositif d'imagerie radiologique et procédé de production
EP3770644B1 (fr) 2018-03-19 2023-08-09 FUJIFILM Corporation Détecteur de rayonnement et dispositif de capture d'image radiographique
WO2019188361A1 (fr) * 2018-03-27 2019-10-03 富士フイルム株式会社 Détecteur de rayonnement et dispositif d'imagerie radiographique
JP7325295B2 (ja) * 2019-10-24 2023-08-14 浜松ホトニクス株式会社 シンチレータパネル、放射線検出器、シンチレータパネルの製造方法、及び、放射線検出器の製造方法
JP7333244B2 (ja) * 2019-10-24 2023-08-24 浜松ホトニクス株式会社 放射線検出器、及び、放射線検出器の製造方法

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JP2006025832A (ja) * 2004-07-12 2006-02-02 Konica Minolta Medical & Graphic Inc 放射線画像撮影システム及び放射線画像撮影方法
JP2009032854A (ja) * 2007-07-26 2009-02-12 Fujifilm Corp 放射線撮像素子

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JP2004504611A (ja) * 2000-03-31 2004-02-12 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 線量を検出するｆｄｘｄ検出器
JP2006025832A (ja) * 2004-07-12 2006-02-02 Konica Minolta Medical & Graphic Inc 放射線画像撮影システム及び放射線画像撮影方法
JP2009032854A (ja) * 2007-07-26 2009-02-12 Fujifilm Corp 放射線撮像素子

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