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WO2011098071A1 - Procédé de fabrication de matériaux composites métal-céramique, notamment de substrats composites métal-céramique et matériau composite métal-céramique, notamment substrat composite métal-céramique fabriqué selon ce procédé - Google Patents

Procédé de fabrication de matériaux composites métal-céramique, notamment de substrats composites métal-céramique et matériau composite métal-céramique, notamment substrat composite métal-céramique fabriqué selon ce procédé Download PDF

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Publication number
WO2011098071A1
WO2011098071A1 PCT/DE2011/000122 DE2011000122W WO2011098071A1 WO 2011098071 A1 WO2011098071 A1 WO 2011098071A1 DE 2011000122 W DE2011000122 W DE 2011000122W WO 2011098071 A1 WO2011098071 A1 WO 2011098071A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas atmosphere
capsule
encapsulation
metal
protective gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2011/000122
Other languages
German (de)
English (en)
Inventor
Jürgen SCHULZ-HARDER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Curamik Electronics GmbH
Original Assignee
Curamik Electronics GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Curamik Electronics GmbH filed Critical Curamik Electronics GmbH
Priority to EP11711020A priority Critical patent/EP2534115A1/fr
Publication of WO2011098071A1 publication Critical patent/WO2011098071A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
    • C04B2235/6584—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage below that of air
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6586—Processes characterised by the flow of gas
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/54—Oxidising the surface before joining

Definitions

  • the invention relates to a method according to the preamble of claim 1 and to a metal-ceramic composite material according to the preamble 9.
  • direct bonding methods of bonding a metal to ceramics, i. for producing metal-ceramic composite materials, using a surface eutectic layer of the metal, for example metal oxide layer, which is then produced by heating a reactive metal and ceramic components (hereinafter also referred to as “metal oxide layer”).
  • Connection components melts to a process or bonding temperature (eutectic temperature) and produces the connection between the connection components while wetting the ceramic as a kind of solder during the subsequent cooling.
  • the bonding temperature is below the melting temperature of the metal. In particular, depending on the metal used, this bonding temperature is in the range between about 714 ° C (copper-phosphorus) and 1820 ° C (chromium-oxygen)
  • the metal is first in an oxygen-containing inert gas atmosphere in a known direct-bonding method (DE 23 19 854 / US 3,766,634)
  • this method specifies an oxygen content of the reactive atmosphere of 0.01-0.5 volume percent (100-5000 ppm).
  • CONFIRMATION COPY Process step is treated or oxidized with the reactive gas. After merging the components to be joined metal and ceramic they are heated in an oven to the process or bonding temperature, in one
  • the oxygen content is adjusted to 20-50 ppm by metered addition of oxygen into the protective gas, at a temperature between 960 ° C and 1072 ° C.
  • T is the temperature in ° C.
  • the oxygen content of the copper-oxygen system at a eutectic temperature of 1065 ° C is 2.69 x 10 -6 , which corresponds to about 2.69 ppm ,
  • a regulation of the oxygen content in a protective gas atmosphere for example of nitrogen and / or argon
  • a protective gas atmosphere for example of nitrogen and / or argon
  • nitrogen and / or argon in the range of less than 10 ppm, in particular also in a factory production of metal-ceramic composite materials or substrates, is compatible with the
  • an oxygen partial pressure or oxygen content in the Inert gas atmosphere of the DCB process less than the equilibrium pressure of the system metal (copper) oxygen to a reduction of the adhesion of the metal (copper) to the ceramic, while at a high oxygen partial pressure or oxygen content in the inert gas atmosphere comes to a strong post-oxidation which in extreme cases, a melting of the entire metal, for example, the entire metal or copper foil result.
  • bonding components are accommodated in a reaction chamber formed by a capsule with an inner protective gas atmosphere which is separated by the capsule from an outer protective gas atmosphere surrounding this capsule and in which direct bonding of the oxidized metal foil to the ceramic substrate by heating under protective gas to the process or bonding temperature which is below the melting point of the metal of the metal foil, but at least equal to the melting temperature of the eutectic formed by the oxide film and the metal of the metal foil.
  • inner protective gas atmosphere is to be understood as meaning the atmosphere or protective gas atmosphere within the encapsulated interior or reaction space of a capsule.
  • outer protective gas atmosphere means the protective gas atmosphere surrounding the respective capsule during direct bonding, i. the
  • the object of the invention is to further improve the known method and
  • metal-ceramic composite materials in particular metal-ceramic substrates and especially those for electrical or electronic circuits of the highest quality.
  • a method according to claim 1 and a metal-ceramic composite material according to claim 9 are formed.
  • At least one ceramic substrate and an oxidized metal foil are arranged in the encapsulated space or reaction space formed in the capsule in that the metal foil with an oxidized surface side is flat against a
  • a pretreatment phase for example in a heating phase, the reaction space which is widely opened via at least one rinsing or treatment opening to a surrounding outer protective gas atmosphere is then rinsed with the protective gas (eg nitrogen and / or argon) to remove ambient oxygen, so that a protective gas atmosphere is formed in the reaction space with low oxygen content sets.
  • the protective gas eg nitrogen and / or argon
  • the rinsing of the reaction space can be carried out during a pretreatment phase with the capsule open not only in a short time, but also very intensively with a reduced consumption of protective gas (eg argon or nitrogen).
  • connection components ie the at least one ceramic substrate and the at least one oxidized metal foil, in a treatment or bonding phase in the reaction space formed by the interior of the capsule in an inner protective gas atmosphere Bonding temperature heated under the
  • Melting temperature of the metal is, but at least equal to the melting temperature of the eutectic of the metal (eg, Cu) and the metal oxide (eg., CU2O).
  • the cooling of the capsule and of the components accommodated in the reaction space then takes place, and in fact continues
  • the capsule used is e.g. Also, for example, is not completely closed to the outside during the treatment or bonding phase and during the cooling phase, but has at least one gas exchange opening, which is for example an additional opening and / or generated by not completely closing the at least one treatment opening is and can take place through the gas exchange between the inner and outer inert gas atmosphere.
  • the encapsulation of the reaction space achieved with the capsule is at least 60%.
  • "encapsulation” means the percentage of the closed surface portion of the total area surrounding the encapsulated interior space (total area minus the area of the surface)
  • a 95% encapsulation thus means that 95% of the area surrounding the capsule interior is closed and only 5% of this total area is formed by one or more gas exchange openings.
  • the inventive method is thus characterized by the fact that during the bonding phase and the cooling phase at least a substantial separation of the inert gas atmosphere in the furnace chamber ("outer inert gas atmosphere”), which surrounds the at least one capsule of the inert gas atmosphere in the interior or reaction space of the Capsule ("inner inert gas atmosphere”) is in which (reaction space), the direct bonding takes place and in which the connection components of metal and ceramic are accommodated at least with the region at which the connection is to take place.
  • outer inert gas atmosphere which surrounds the at least one capsule of the inert gas atmosphere in the interior or reaction space of the Capsule
  • the cross section of the at least one gas exchange opening or the total cross section of a plurality of gas exchange openings is selected so that this cross section or total cross section account for less than 40% of the total, the reaction space bounding inner surface of the capsule, the capsulation achieved by the enclosure so larger than 60%.
  • the oxygen content in the outer protective gas atmosphere has no or substantially no influence on the quality of the produced metal-ceramic composite or the produced metal-ceramic substrate, even if the outer protective gas atmosphere has an oxygen content far below or far above the equilibrium oxygen content.
  • This far-reaching independence of the results achieved by the method according to the invention of the oxygen content of the outer protective gas atmosphere is due to the fact that at the relatively high process temperature (960 - 1072 ° C), at which the direct bonding takes place, the diffusion of oxygen from the outer, surrounding the respective ⁇ capsule protective gas atmosphere is very low in the inner protective gas atmosphere inside the capsule or in the reaction space.
  • This effect can be further enhanced by a targeted current conduction of the outer protective gas atmosphere, namely by the fact that the flow is initially directed to the gas exchange openings of the respective capsule for rinsing. In actual bonding at process temperature, the flow is then directed to the closed area of the capsule.
  • the oxygen content is controlled in the protective gas atmosphere surrounding the capsule, but at least limited by a regulation, but not too great accuracy for the control or adjustment is required.
  • gross fluctuations in the Oxygen content compensated (fluctuations) either by the entry of oxygen at the furnace openings or by an oxygen consumption due to oxidation of metallic furnace components.
  • the adjustment of the oxygen content in the outer protective gas atmosphere is preferably carried out as a function of the encapsulation. Depending on the encapsulation of the
  • Oxygen content in the outer inert gas atmosphere for example, set as follows:
  • the at least one ceramic substrate and the at least one metal foil can be inserted one after the other into the respective capsule, or else as a stack prepared outside the capsule.
  • the metal foil is, for example, before introduction into the capsule in a
  • Oxygen as a reactive gas is particularly suitable for metal foils made of copper.
  • the heating of the respective capsule and the components accommodated in this capsule to the direct-bonding temperature takes place in an oven, preferably in a continuous or tunnel oven, wherein the oven compartment contains the outer protective gas atmosphere with a regulated oxygen content.
  • Oxygen content in the outer protective gas atmosphere is effected by metering oxygen into the protective gas.
  • the encapsulated space preferably contains a buffer substance, at least in the case of a 100% encapsulation, with which (buffer substance) the oxygen partial pressure in the interior
  • Inert gas atmosphere i. is adjusted and / or maintained in the encapsulated reaction space at the reaction or bonding temperature to ensure optimum DCB bonding between the metal (copper) and the ceramic, while preventing at least disturbing post-oxidation.
  • This set by the buffer substance oxygen partial pressure is then preferably between 3 - 10 ppm.
  • the buffer substance contains, for example, CuO in the form of powder, optionally mixed with copper powder.
  • the method is designed, for example, in such a way that
  • reaction space is sealed against the outer protective gas atmosphere surrounding the capsule or the encapsulation is greater than 60%
  • the outer protective gas atmosphere at an encapsulation of 80-95% contains 50 to 200 ppm oxygen
  • the outer protective gas atmosphere at an encapsulation greater than 95% contains oxygen in a proportion of less than 20 ppm or greater than 200 ppm
  • the respective capsule is designed in the form of a frame enclosing the reaction space
  • the respective capsule is formed like a dish with a lid
  • the respective capsule with at least one support or intermediate layer for the
  • buffer substance such on the basis of copper oxide, preferably on the
  • Base is copper oxide / copper
  • the encapsulation is chosen in the range of 99 to 65%,
  • FIG. 1 in a simplified representation and in section a according to the invention
  • Fig. 2 in a simplified representation of a trained as a tunnel furnace system for
  • Fig. 3 u. 4 is a simplified sectional view of one of the system of Figure 2
  • FIG. 5-9 in representations similar to Figures 3 and 4 show further embodiments of the capsules used in the invention.
  • the metal-ceramic substrate (copper-ceramic substrate) generally designated 1 in FIG. 1 consists, in a known manner, of the flat ceramic layer 2 and of two metal layers in the form of copper layers or foils applied on one surface side by DCB bonding 3 and 4.
  • the production of the substrates 1 takes place in a plant 5 shown schematically in Figure 2 with a tunnel oven 7.
  • connection components (ceramic layer 2 and pre-oxidized copper foils 3 and 4) are each introduced into a, for example, flat, rectangular or square, shaft-like or shell-like capsule 7, for example as
  • the separation layer 8 is
  • a porous layer of fine particles or of a powder of a high temperature resistant material such as mullite, Al2O3, T1O2, ZrÜ2, MgO, CaO, CaCO2 and with a grain size, for example, less than 30 ⁇ .
  • Transport direction TR moves through different zones of this furnace, first through a heating zone A, in which the temperature rises inside the tunnel oven 6 from room temperature, for example, to a temperature in the range between 120 ° C and 300 ° C, then by a treatment or Bonding zone B, in which the temperature in the tunnel kiln from the final temperature of the heating zone A to the
  • Bonding temperature of the DCB process i. at a temperature in the range between
  • the interior of the tunnel kiln 6 is acted upon by a protective gas atmosphere.
  • the protective gas of this atmosphere which is introduced in particular in the region of the heating zone A and in the region of the cooling zone C into the interior of the tunnel kiln 6, is for example nitrogen and / or argon.
  • the inert gas atmosphere also contains a small proportion of oxygen.
  • the oxygen content of the protective gas atmosphere within the tunnel kiln 6 is, for example, 0.2 ppm - 1000 ppm.
  • Each capsule 7 consists for example of a trough-like base body 9, in the interior of which the layer sequence 1 .1 is received, as well as a lid 10 which closes the base body 9 at its upper side.
  • a special feature is that through corresponding guide and / or actuating elements within the heating zone of the cover 10 of the respective capsule 7 is lifted from the base body 9, so that the respective capsule 7 is opened over a relatively large area and thus an intensive rinsing of the
  • Capsule interior can be done with the gas of the inert gas atmosphere or with the protective gas, by the formed between the raised lid 10 and the upper edge of the cup-shaped or bowl-shaped base body 9 rinse or treatment opening 1 first
  • the cover 10 After leaving the heating zone A1, the cover 10 is deposited by the guiding or actuating means on the base body 10, so that the interior of the respective capsule 7 is closed on the capsule top and in the interior or in
  • Reaction space of the capsule enclosed "inner inert gas atmosphere" at 100% encapsulation is completely separated from the "outer inert gas atmosphere" inside the tunnel kiln 6 or at an encapsulation of less than 100%, for example between 40% and 100% via at least one gas exchange opening 9.1 or 10.1, which is provided in the base body 9 and / or cover 10 and whose opening cross section corresponds to the respective encapsulation, is in communication with the outer atmosphere in the tunnel interior.
  • the oxygen content of the outer protective gas atmosphere in the tunnel interior is chosen as a function of the respective encapsulation, for example
  • the closed state or the encapsulation of the respective capsule 7 is also maintained within the cooling zone C.
  • the opening of the respective capsule 7 in the heating zone has u.a. the advantage of intensive flushing of the capsule interior with inert gas or with the
  • Copper layers to the inner or encapsulated inert gas atmosphere sets an oxygen content, which is less than 10 ppm, preferably in the range between 2 and 6 ppm and thus ensures optimal DCB bonding.
  • encapsulation in zones B and C Another significant advantage of the encapsulation in zones B and C is that subsequent oxidation of the copper layers 3 and 4 after DCB bonding and during cooling to ambient temperature is prevented, or at least greatly reduced. Furthermore, encapsulation also prevents impairment of the DCB bonding due to external influences, for example due to oxygen removal by the transport element of the tunnel kiln 6, which is of great advantage, in particular after renewal of the transport element.
  • the relevant capsule 7 After leaving the tunnel kiln 6 at the cooling zone C and after removing the respective substrate 1, the relevant capsule 7 is available for reuse.
  • FIG. 5 shows a schematic representation of a capsule 7a whose main body 9a which can be closed by the cover 10a on the circumference, preferably on two opposite peripheral sides, has large flushing openings 12, each of which can be closed by a cover 13.
  • the openings 12 and the associated cover 1 3 are located, for example, on the transverse to the transport direction TR oriented sides of the respective capsule.
  • the at least one gas exchange opening is e.g. in the
  • FIG. 6 shows, in a simplified sectional view, two capsules 7b following one another in the transport direction TR, which are each provided with a large-sized flushing opening 14 at their circumferential sides oriented perpendicular to the transport direction, namely, for example, at the shell-like base body 9b, which is provided at its upper side by means of a cover 10b is closable.
  • the capsules 7b are moved through the tunnel kiln 6 in such a way that consecutive capsules 7b within the zone A are spaced apart from one another in the transport direction TR so that flushing of the respective capsule interior with protective gas (nitrogen and / or argon) is possible via the openings 14.
  • protective gas nitrogen and / or argon
  • each capsule 7b is separated from the outer protective gas atmosphere of the tunnel kiln 6 at least according to the desired encapsulation.
  • Figures 8 and 9 show as another embodiment, a capsule 7c, which consists of a plurality of stacked individual capsules 1 5, which in the illustrated
  • the individual capsules 1 5 by there leadership and / or
  • inert gas nitrogen and / or argon
  • gas exchange openings not shown, for example, in the peripheral wall of the individual capsules 1 5 or by the
  • Opening cross section of these gas exchange openings is set the required encapsulation.
  • a protective gas atmosphere for example again from nitrogen and / or argon with the low oxygen content in the range between 0.2 ppm - 1000 ppm

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)

Abstract

L'invention concerne un procédé de fabrication de substrats composites métal-céramique selon lequel au moins un substrat céramique, par exemple au moins un substrat céramique en forme de plaquette, est relié à un film métallique oxydé par connexion directe, c.-à-d. par chauffe dans un gaz protecteur à une température de processus ou de connexion inférieure au point de fusion du métal ou du film métallique, mais au moins égale à la température de fusion de l'eutectique formé par la couche d'oxyde et le métal. Le ou les substrats céramique et le ou les films métalliques à connecter à ce ou ces substrats sont logés dans une chambre de réaction formée par l'intérieur d'une capsule au cours du procédé.
PCT/DE2011/000122 2010-02-12 2011-02-09 Procédé de fabrication de matériaux composites métal-céramique, notamment de substrats composites métal-céramique et matériau composite métal-céramique, notamment substrat composite métal-céramique fabriqué selon ce procédé Ceased WO2011098071A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP11711020A EP2534115A1 (fr) 2010-02-12 2011-02-09 Procédé de fabrication de matériaux composites métal-céramique, notamment de substrats composites métal-céramique et matériau composite métal-céramique, notamment substrat composite métal-céramique fabriqué selon ce procédé

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010007919.7A DE102010007919B4 (de) 2010-02-12 2010-02-12 Verfahren zum Herstellen von Metall-Keramik-Substraten sowie nach diesem Verfahren hergestelltes Metall-Keramik-Substrat
DE102010007919.7 2010-02-12

Publications (1)

Publication Number Publication Date
WO2011098071A1 true WO2011098071A1 (fr) 2011-08-18

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Family Applications (1)

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PCT/DE2011/000122 Ceased WO2011098071A1 (fr) 2010-02-12 2011-02-09 Procédé de fabrication de matériaux composites métal-céramique, notamment de substrats composites métal-céramique et matériau composite métal-céramique, notamment substrat composite métal-céramique fabriqué selon ce procédé

Country Status (3)

Country Link
EP (1) EP2534115A1 (fr)
DE (1) DE102010007919B4 (fr)
WO (1) WO2011098071A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013143530A1 (fr) * 2012-03-30 2013-10-03 Curamik Electronics Gmbh Procédé de préparation de substrats métal-céramique

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3766634A (en) 1972-04-20 1973-10-23 Gen Electric Method of direct bonding metals to non-metallic substrates
US3994430A (en) 1975-07-30 1976-11-30 General Electric Company Direct bonding of metals to ceramics and metals
DE2633869A1 (de) 1975-07-30 1977-02-17 Gen Electric Direkte verbindung von metallen mit keramikmaterialien und metallen
DE3036128A1 (de) 1980-09-25 1982-04-01 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von kupferfolien mit oxidkeramiksubstraten
US4483810A (en) 1982-02-06 1984-11-20 Brown, Boveri And Cie Ag Method for directly joining metal pieces to oxide-ceramic substrates
DE20116816U1 (de) * 2001-10-17 2002-04-04 Schulz-Harder, Jürgen, Dr.-Ing., 91207 Lauf Kapsel zum Herstellen von Metall-Keramik-Verbundmaterialien, insbesondere Metall-Keramik-Substraten
DE10148550A1 (de) 2001-10-01 2003-04-17 Juergen Schulz-Harder Verfahren zum Herstellen von Metall-Keramik-Verbundmaterialien, insbesondere Metall-Keramik-Substraten sowie nach diesem Verfahren hergestelltes Keramik-Verbundmaterial, insbesondere Metall-Keramik-Sustrat

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3766634A (en) 1972-04-20 1973-10-23 Gen Electric Method of direct bonding metals to non-metallic substrates
DE2319854A1 (de) 1972-04-20 1973-10-25 Gen Electric Verfahren zum direkten verbinden von metallen mit nichtmetallischen substraten
US3994430A (en) 1975-07-30 1976-11-30 General Electric Company Direct bonding of metals to ceramics and metals
DE2633869A1 (de) 1975-07-30 1977-02-17 Gen Electric Direkte verbindung von metallen mit keramikmaterialien und metallen
DE3036128A1 (de) 1980-09-25 1982-04-01 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von kupferfolien mit oxidkeramiksubstraten
US4483810A (en) 1982-02-06 1984-11-20 Brown, Boveri And Cie Ag Method for directly joining metal pieces to oxide-ceramic substrates
DE10148550A1 (de) 2001-10-01 2003-04-17 Juergen Schulz-Harder Verfahren zum Herstellen von Metall-Keramik-Verbundmaterialien, insbesondere Metall-Keramik-Substraten sowie nach diesem Verfahren hergestelltes Keramik-Verbundmaterial, insbesondere Metall-Keramik-Sustrat
DE20116816U1 (de) * 2001-10-17 2002-04-04 Schulz-Harder, Jürgen, Dr.-Ing., 91207 Lauf Kapsel zum Herstellen von Metall-Keramik-Verbundmaterialien, insbesondere Metall-Keramik-Substraten

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J. OSTERWALD: "elektrochemische Gleichgewichtsuntersuchungen am System-Kupfer-Sauerstoff zwischen 1065 und 1300°C", HABILITATIONSARBEIT, 1965
NEUMANN ET AL., METAL PROCESS, 1985, pages 85

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013143530A1 (fr) * 2012-03-30 2013-10-03 Curamik Electronics Gmbh Procédé de préparation de substrats métal-céramique

Also Published As

Publication number Publication date
EP2534115A1 (fr) 2012-12-19
DE102010007919A1 (de) 2011-08-18
DE102010007919B4 (de) 2022-03-03

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