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WO2011095217A1 - Procédé et processus permettant une reproduction de poinçon métallique pour des nanomotifs de grande surface - Google Patents

Procédé et processus permettant une reproduction de poinçon métallique pour des nanomotifs de grande surface Download PDF

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Publication number
WO2011095217A1
WO2011095217A1 PCT/EP2010/051399 EP2010051399W WO2011095217A1 WO 2011095217 A1 WO2011095217 A1 WO 2011095217A1 EP 2010051399 W EP2010051399 W EP 2010051399W WO 2011095217 A1 WO2011095217 A1 WO 2011095217A1
Authority
WO
WIPO (PCT)
Prior art keywords
stamp
recited
metal
layer
imprint
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/051399
Other languages
English (en)
Inventor
Matthias Keil
Gang Luo
Ye Zhou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Obducat AB
Original Assignee
Obducat AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Obducat AB filed Critical Obducat AB
Priority to CN201080061817XA priority Critical patent/CN102713752A/zh
Priority to EP10706563A priority patent/EP2531888A1/fr
Priority to JP2012551510A priority patent/JP2013518740A/ja
Priority to PCT/EP2010/051399 priority patent/WO2011095217A1/fr
Priority to US13/576,411 priority patent/US20120297856A1/en
Priority to KR1020127023157A priority patent/KR101698838B1/ko
Publication of WO2011095217A1 publication Critical patent/WO2011095217A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H10P76/2041—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Definitions

  • the present invention relates to replication of metal stamps assisted by imprinting lithography technology using an intermediate polymer stamp (IPS) consisting of micro- and nano-structures.
  • IPS intermediate polymer stamp
  • the invention of the imprint lithography by Kondo at NTT, a low-cost and high throughput manufacturing process, has been widely adopted in many applications, such as photonics, magnetic data storage, display, nano- micro-electromechanical system (NEMSs, MEMSs), nano- micro-electronics, biotech and chemical synthesis.
  • NEMSs, MEMSs nano- micro-electromechanical system
  • one of the key issues in the invented technique is to fabricate the imprint stamp with Nanopatterns in high resolution, large area, at a low cost, and it is simultaneously capable of pattering arbitrary nanostructures over a large area with long-range order at a low cost (J. J. Wang, et al. J. lightwave technol., vol.
  • NIL Nano Imprint Lithography
  • a nickel stamp not only provides high mechanical strength and durability but also enables cost-effective manufacturing via electroforming process (J. K. Luo, et al., Mater. Lett., vol. 58, pp. 2306-2309, 2004; T. Haatainen, et al., Microelectron. Eng., vol. 83, pp. 948-950, 2006; S. H.
  • the suitable molds for electroforming should be conductive as well as anti-adhesive to the electroformed nickel stamp in order to facilitate multiple copies of nickel stamps from one original mold.
  • a silicon stamp J. Kouba, et al., J. Phys. Conference Series, Vol. 34, p. 897 (2006)
  • a quartz stamp Y. Hirai, et al., Jpn. J. Appl. Phys. Vol. 41 , p. 4186 (2002)
  • a concentrated alkaline solvent has to be used to dissolve the templates.
  • the original mold was destroyed and only capable of providing one-nickel stamp.
  • Another well-known method is to use a structured and developed electron beam resist served directly as a galvanic form for nickel electroforming.
  • Electron Beam Lithography (EBL)-resist master is the key issue to reduce the manufacturing cost of Nano-lmprint Lithography (NIL) and thereby to further promote application of NIL technology in the industry.
  • EBL Electron Beam Lithography
  • NIL Nano-lmprint Lithography
  • electroforming via a familiar process facilitated more copies of the Ni-stamp, which have identical structures to that of the original EBL-master.
  • one EBL-master only provides one "father” Ni- stamp with inverse features via electroforming.
  • a "mother” stamp with identical structures to the EBL-master was obtained.
  • One aspect of the present invention is provided by a method for obtaining a metal stamp having the same structure as a master stamp from at least one intermediate stamp, comprising the steps of providing a first imprint layer on top of a first carrier substrate, imprinting structures in the first imprint layer using a master stamp to obtain a first intermediate stamp, providing a conductive layer on top of the structured first intermediate stamp to obtain a seed layer, plating metal on top of the seed layer to obtain a metal stamp, and separating the first intermediate stamp from the metal stamp.
  • Another aspect of the present invention is related to method for obtaining a metal stump with a structure inverse to that of the master stamp, where the metal stamp is obtained from at least two intermediate stamps according to the following steps: providing a second imprint layer on top of a second carrier layer, using the said first intermediate stamp to imprint structures in the second imprint layer in order to obtain a second intermediate stamp, providing a conductive layer on top of the second intermediate stamp to obtain a seed layer, plating metal on top of the seed layer to obtain a metal stamp, and separating the second intermediate stamp from the metal stamp.
  • the first and second carrier substrates may comprise a polymer material, while the first carrier substrate may comprises a transparent material.
  • the second carrier substrate may comprise transparent or nontransparent material, wherein the carrier substrates may comprises glass, a semiconductor material or metals.
  • first and second imprint layers may be coated on top of the carrier substrates.
  • Anti-sticking molecules may be provided in the resist before obtaining the seed layer and therefore the seed layer thickness of at least one atomic conductive layer may be sputtered on top of the structures in the first intermediate stamp.
  • the seed layer may be sputtered on top of the structures of the second intermediate stamp.
  • the conductive material may be a metal composed of at least one of the metals nickel, gold, silver, titanium, copper and aluminum.
  • the metal stamp may be electroplated on top of the conductive layer.
  • the structures imprinted in the imprint layer may comprise micro and nano- structures sizes greater than 5 nm.
  • the first imprint layer and the second imprint layer material is conductive polymer
  • a seed layer is not necessary. In this case the sputtering step is not performed, and the metal stamp is electroplated directly on top of the conductive polymer directly.
  • the separation step between the intermediate stamps and the metal stamp may be achieved by mechanical demolding. It may also be mentioned that manufacturing of any of the metal stamps above may be performed at constant temperature in the range of 15-100 0 C, preferably 20-70 0 C.
  • Fig. 1 shows a schematic diagram of stamp replication process via electroforming using IPS as the galvanic-template.
  • Fig. 2 shows a schematic diagram of stamp replication process via a two-step imprint process using the IPS imprinted substrate as galvanic-template.
  • Fig. 3 displays Scan Electron Microscope (SEM) and Atomic Force Microscope (AFM) images of the produced nickel stamp with photonic crystal structures.
  • Fig. 4 displays SEM and AFM images of the produced nickel stamp with magnetic storage media structures.
  • Fig. 5 displays SEM and AFM images of the imprinted Si-substrate.
  • Fig. 6 displays SEM images acquired on the replicated nickel stamp.
  • the method includes pattern transfer to an intermediate polymer stamp (IPS) where an IPS can either be directly used as a galvanic-master stamp to replicate the metal stamp (one-step imprinting), which has nanostructures identical to those of the original master stamp-
  • IPS intermediate polymer stamp
  • the IPS may also be used further to imprint a resist, such as, but not limited to, a thermoplastic/UV-curable resist on substrates (two-step imprinting). In this fashion the nanostructures on electroformed metal stamp will be inversed to that of the original master stamp.
  • the invention offers a significant extension of the life-time of the original master stamp since the imprinting and demoulding only happens between the soft polymer material and the master stamp, thereby avoiding fracturing of the hard material and contaminants such as dust particles present at the interface between the master stamp and the IPS will be enclosed by the IPS.
  • the direct electroforming from the IPS- based master stamp will result in easy separation between the master stamp and the metal stamp after electroforming. It has been shown that using IPS based
  • nanoimprinting about 1000 IPS using one master stamp can be produced without contaminating or damaging the master stamp, which means that 1000 metal stamps could be replicated via electroforming based on one master stamp.
  • the selected IPS material is UV-transparent, even if the original master stamp is opaque or UV- nontransparent, the UV-imprints can still be performed between the master stamp and IPS and also between the IPS and other opaque/UV-nontransparent substrates.
  • Conformability of the IPS makes it capable of adapting to the non-planar master stamp or substrate;
  • IPS Using an IPS avoids fractures on the hard material. For example, if some
  • the nickel-stamp with structures identical to those of the original stamp is readily obtained via electroforming from an IPS according to figure 1.
  • Figure 1 shows a schematic diagram of the stamp replication process via electroforming using IPS as the galvanic-template.
  • the nickel stamp contains nanostructures identical to those of the original master stamp. It should be emphasized that either an additional fluorocarbon film via plasma-enhanced CVD, (such as shown by U. S. Patent No.
  • a release layer deposited onto the imprinted substrate prior to the metallization of a seed layer is very crucial, since without the release layer the substrate resist was peeled off from the substrate and adhered strongly onto the electroformed Ni-stamps.
  • a releasing film e.g. plasma enhanced Chemical
  • the original master stamp was obtained, for instance, by a combined e-beam recording (EBR) and electroforming process.
  • a nickel stamp obtained in this fashion consists of an array of width 230 nm PCS with a pitch of 450 nm and a depth of 130 nm across 4-inch patterned area.
  • An acrylate imprint resist was coated onto a polycarbonate polymer sheet and then used as the substrate for nanoimprinting. After demoulding the IPS, it was inspected by AFM, SEM and an optical microscope. The surface of the IPS was further modified by depositing a thin ( ⁇ 6 nm) fluorocarbon film via plasma enhanced chemical vapor deposition. Then, a nickel seed layer was sputtered onto the IPS prior to electroforming.
  • the thickness of the sputtered Ni-seed layer was 10 nm. Since we adopted nickel as the seed layer, the definition of the nanostructures should be maintained well. It could be seen that the replicated nickel-stamp has identical structures to that of the original master stamp, and the replicated features showed long-range order as well as high fidelity (Fig. 3).
  • Example 2 Nickel stamp with magnetic storage media nanostructures
  • An original nickel imprint was produced by a combined e-beam recording technique and an electroforming process.
  • the patterns In a data track area the patterns have dimensions of 40 nm in width and 120nm in pitch.
  • the imprinted IPS was inspected with SEM, using an acrylate imprint resist on a polycarbonate polymer sheet. The inverse nanofeatures were transferred with good fidelity.
  • the electroforming After sputtering of a thin film ( ⁇ 1 Onm) of nickel, the electroforming was performed. The big advantage of sputtering a thin metal layer instead of thick layer is to avoid hole-inclusion due to narrow nanochannels with high aspect ratio and with high pattern density.
  • the electroformed nickel stamp with nanostructures identical to those of the original master stamp was obtained (Fig. 4).
  • Nickel stamp with photonic crystal structures The stamp consists of an array of dots with 200 nm in diameter with a pitch of 460 nm by 3-inch area.
  • the IPS which comprises an acrylate imprint resist on a polycarbonate carrier polymer sheet, was imprinted onto master stamp.
  • the IPS was further used to transfer the patterns onto the Si-wafer, which was pre-coated with an epoxy imprint resist (Fig. 5).
  • the imprinted Si-wafer was finally used as a mold for electroforming to obtain the nickel stamp replica, which comprises structures inverse to those on the original stamp.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention se rapporte à un procédé et à un processus permettant d'obtenir un poinçon métallique à partir d'un poinçon polymère intermédiaire, comprenant les étapes consistant à disposer une première couche d'impression sur une première couche polymère, et à imprimer des structures pour obtenir un poinçon intermédiaire. Une couche conductrice est disposée sur les structures pour obtenir une couche de germe si le polymère imprimé est non conducteur, un métal est plaqué sur le poinçon polymère intermédiaire pour obtenir un poinçon métallique, le poinçon intermédiaire est ensuite séparé du poinçon métallique. Cette invention concerne une reproduction de poinçon à un débit élevé et à faible coût.
PCT/EP2010/051399 2010-02-05 2010-02-05 Procédé et processus permettant une reproduction de poinçon métallique pour des nanomotifs de grande surface Ceased WO2011095217A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201080061817XA CN102713752A (zh) 2010-02-05 2010-02-05 大面积纳米图案的金属冲压复制方法与工艺
EP10706563A EP2531888A1 (fr) 2010-02-05 2010-02-05 Procédé et processus permettant une reproduction de poinçon métallique pour des nanomotifs de grande surface
JP2012551510A JP2013518740A (ja) 2010-02-05 2010-02-05 大面積ナノパターン用金属スタンプ複製の方法及びプロセス
PCT/EP2010/051399 WO2011095217A1 (fr) 2010-02-05 2010-02-05 Procédé et processus permettant une reproduction de poinçon métallique pour des nanomotifs de grande surface
US13/576,411 US20120297856A1 (en) 2010-02-05 2010-02-05 Method and process for metallic stamp replication for large area nanopatterns
KR1020127023157A KR101698838B1 (ko) 2010-02-05 2010-02-05 큰 면적 나노패턴을 위한 금속 스탬프 복제의 방법 및 절차

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2010/051399 WO2011095217A1 (fr) 2010-02-05 2010-02-05 Procédé et processus permettant une reproduction de poinçon métallique pour des nanomotifs de grande surface

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WO2011095217A1 true WO2011095217A1 (fr) 2011-08-11

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US (1) US20120297856A1 (fr)
EP (1) EP2531888A1 (fr)
JP (1) JP2013518740A (fr)
KR (1) KR101698838B1 (fr)
CN (1) CN102713752A (fr)
WO (1) WO2011095217A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3011391B1 (fr) * 2013-06-20 2018-07-18 Ev Group E. Thallner GmbH Matrice pourvue d'une structure et procédé pour la fabriquer

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8771529B1 (en) * 2010-09-30 2014-07-08 Seagate Technology Llc Method for imprint lithography
CN103814143A (zh) * 2011-09-19 2014-05-21 科卢斯博知识产权有限公司 用于鉴别和纹理化的纳米复制和微米复制
SG11201803557PA (en) * 2015-10-27 2018-05-30 Agency Science Tech & Res Nanoinjection molding
EP3547026B1 (fr) * 2018-03-28 2023-11-29 CSEM Centre Suisse d'Electronique et de Microtechnique SA Procédé de fabrication d'un tampon métallique pour le gaufrage d'une nano et/ou microstructure sur un dispositif métallique ainsi que ses utilisations et dispositifs fabriqués à partir de celui-ci
KR102142981B1 (ko) * 2018-05-29 2020-08-11 한국기계연구원 나노패턴을 가지는 금속층 제조방법
CN114178067B (zh) * 2022-01-14 2023-04-28 苏州新维度微纳科技有限公司 纳米压印胶体溅射装置及方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422389A (en) 1977-07-21 1979-02-20 Toyama Chem Co Ltd Novel 7alpha-methoxycephalosporins and their preparation
US5244730A (en) 1991-04-30 1993-09-14 International Business Machines Corporation Plasma deposition of fluorocarbon
US5698901A (en) 1994-09-12 1997-12-16 Nec Corporation Semiconductor device with amorphous carbon layer for reducing wiring delay
US6184572B1 (en) 1998-04-29 2001-02-06 Novellus Systems, Inc. Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices
WO2002003142A2 (fr) * 2000-06-30 2002-01-10 President And Fellows Of Harvard College Procede et dispositif pour l'impression de microcontacts electriques
EP1731962A1 (fr) 2005-06-10 2006-12-13 Obducat AB Réplication d'un motif avec matrice de pressage intermédiaire

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030071016A1 (en) 2001-10-11 2003-04-17 Wu-Sheng Shih Patterned structure reproduction using nonsticking mold
TW200511296A (en) * 2003-09-01 2005-03-16 Matsushita Electric Industrial Co Ltd Method for manufacturing stamper, stamper and optical recording medium
EP1731961B1 (fr) * 2005-06-10 2008-11-05 Obducat AB Méthode pour la reproduction d'un modèle
US7955516B2 (en) * 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
EP2199855B1 (fr) * 2008-12-19 2016-07-20 Obducat Procédés et méthodes pour modifier les interactions en surface de matériaux polymériques
US20120126458A1 (en) * 2009-05-26 2012-05-24 King William P Casting microstructures into stiff and durable materials from a flexible and reusable mold

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422389A (en) 1977-07-21 1979-02-20 Toyama Chem Co Ltd Novel 7alpha-methoxycephalosporins and their preparation
US5244730A (en) 1991-04-30 1993-09-14 International Business Machines Corporation Plasma deposition of fluorocarbon
US5698901A (en) 1994-09-12 1997-12-16 Nec Corporation Semiconductor device with amorphous carbon layer for reducing wiring delay
US6184572B1 (en) 1998-04-29 2001-02-06 Novellus Systems, Inc. Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices
WO2002003142A2 (fr) * 2000-06-30 2002-01-10 President And Fellows Of Harvard College Procede et dispositif pour l'impression de microcontacts electriques
EP1731962A1 (fr) 2005-06-10 2006-12-13 Obducat AB Réplication d'un motif avec matrice de pressage intermédiaire

Non-Patent Citations (12)

* Cited by examiner, † Cited by third party
Title
B. HEIDARI ET AL., J. VAC. SCI. TECHNOL., vol. B 17, no. 6, 1999, pages 2961 - 2964
CORSAT F ET AL: "Imprint Technologies on Conductive Polymers and Metals for Interconnection and Bumping Purposes", 1ST ELECTRONICS SYSTEMINTEGRATION TECHNOLOGY CONFERENCE, IEEE, PI, 1 September 2006 (2006-09-01), pages 1336 - 1341, XP031008551, ISBN: 978-1-4244-0552-7 *
HONG, S. ET AL., MICROELECTRONICS, ENG., vol. 84, 2007, pages 977
J. J. WANG ET AL., J. LIGHTWAVE TECHNOL., vol. 23, 2005, pages 474 - 485
J. K. LUO ET AL., MATER. LETT., vol. 58, 2004, pages 2306 - 2309
J. KOUBA ET AL., J. PHYS. CONFERENCE SERIES, vol. 34, 2006, pages 897
KIM H ET AL: "Fabrication of metallic nano stamp to replicate patterned substrate using electron-beam recording, nanoimprinting, and electroforming", IEEE TRANSACTIONS ON MAGNETICS MAY 2009 INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS INC. USA, vol. 45, no. 5, May 2009 (2009-05-01), pages 2304 - 2307, XP002595495, DOI: DOI:10.1109/TMAG.2009.2016476 *
S. H. HONG ET AL., MICROELECTRON. ENG., vol. 84, 2007, pages 977 - 979
T. HAATAINEN ET AL., MICROELECTRON. ENG., vol. 83, 2006, pages 948 - 950
Y. HIRAI ET AL., JPN. J. APPL. PHYS., vol. 41, 2002, pages 4186
Y. HIRAI ET AL., JPN. J. APPL. PHYS., vol. 41, 2002, pages 4186 - 4189
YOUN ET AL: "A replication process of metallic micro-mold by using parylene embossing and electroplating", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL LNKD- DOI:10.1016/J.MEE.2007.05.005, vol. 85, no. 1, 20 November 2007 (2007-11-20), pages 161 - 167, XP022353975, ISSN: 0167-9317 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3011391B1 (fr) * 2013-06-20 2018-07-18 Ev Group E. Thallner GmbH Matrice pourvue d'une structure et procédé pour la fabriquer
US11131021B2 (en) 2013-06-20 2021-09-28 Ev Group E. Thallner Gmbh Mould with a mould pattern, and device and method for producing same

Also Published As

Publication number Publication date
CN102713752A (zh) 2012-10-03
JP2013518740A (ja) 2013-05-23
KR20120124476A (ko) 2012-11-13
EP2531888A1 (fr) 2012-12-12
KR101698838B1 (ko) 2017-01-23
US20120297856A1 (en) 2012-11-29

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