[go: up one dir, main page]

WO2011070860A1 - Cible de pulvérisation cathodique de matériau magnétique - Google Patents

Cible de pulvérisation cathodique de matériau magnétique Download PDF

Info

Publication number
WO2011070860A1
WO2011070860A1 PCT/JP2010/068552 JP2010068552W WO2011070860A1 WO 2011070860 A1 WO2011070860 A1 WO 2011070860A1 JP 2010068552 W JP2010068552 W JP 2010068552W WO 2011070860 A1 WO2011070860 A1 WO 2011070860A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
sputtering target
magnetic material
less
wtppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2010/068552
Other languages
English (en)
Japanese (ja)
Inventor
荒川　篤俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
JX Nippon Mining and Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Priority to JP2011518968A priority Critical patent/JP4837805B2/ja
Priority to EP10835782.3A priority patent/EP2511397B1/fr
Priority to CN201080056188.1A priority patent/CN102652184B/zh
Priority to US13/513,387 priority patent/US9269389B2/en
Publication of WO2011070860A1 publication Critical patent/WO2011070860A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
    • C22C38/105—Ferrous alloys, e.g. steel alloys containing cobalt containing Co and Ni
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor

Definitions

  • the present invention is a sputtering target containing boron (B) manufactured by a melting / casting method, has few gas component impurities, has little compositional segregation, and has no problems with mechanical properties such as cracks.
  • the present invention relates to a target useful for applications such as a head and a magnetoresistive element (MRAM).
  • MRAM magnetoresistive element
  • a magnetoresistive element As a next-generation high-speed memory element, a magnetoresistive element (MRAM) is being developed, and a magnetic material containing boron (B) is used as a material used for a layer constituting the MRAM.
  • MRAM magnetoresistive element
  • B magnetic material containing boron
  • a composition composed of Co, Fe, Ni and the like and boron, Co—B, Co—Fe—B, or a composition obtained by adding Al, Cu, Mn, Ni or the like to these is known.
  • the magnetic layer constituting these MRAMs is produced by sputtering a sputtering target having a composition comprising Co, Fe, Ni and the like and boron.
  • Such a magnetic material sputtering target contains B as a main component, particularly when the B composition ratio exceeds 10%, a Co 3 B, Co 2 B, and CoB compound phase having very brittle characteristics is formed. As a result, the ingot was cracked and cracked, making it difficult to obtain a sputtering target.
  • a magnetron sputtering apparatus equipped with a DC power source is widely used because of high productivity.
  • a substrate serving as a positive electrode and a target serving as a negative electrode are opposed to each other, and an electric field is generated by applying a high voltage between the substrate and the target in an inert gas atmosphere.
  • the inert gas is ionized and a plasma composed of electrons and cations is formed.
  • a plasma composed of electrons and cations is formed.
  • the cations in the plasma collide with the surface of the target (negative electrode)
  • atoms constituting the target are knocked out.
  • the projected atoms adhere to the opposing substrate surface to form a film.
  • the principle that the material constituting the target is formed on the substrate by such a series of operations is used.
  • B is added to an alloy mainly composed of Co and dissolved to be deoxygenated, rapidly solidified by pulverization, and further powdered to sinter the powder.
  • Patent Document 1 boron is added in an amount of 10% or less to remove oxygen from a metal raw material such as Co, and deoxygenation is aimed at by adding B in the middle of the process, but ultimately a powder sintering method is adopted. Therefore, as shown in the Examples and Comparative Examples of Patent Document 1, it is inferior in terms of oxygen amount and density as compared with the melt casting method, and in the first place, for the production of a target that needs to control the composition of B. Cannot be used.
  • the oxygen content obtained by the powder sintering method is 150 wtppm or more. In order to further reduce this, an expensive device must be devised, which is not preferable in actual production.
  • Manufacture B-transition metal sputtering target manufactured by melting / casting method improve density, reduce compositional segregation, eliminate generation of cracks and cracks, and remarkably reduce oxygen and other gas components It is an object of the present invention to suppress the deterioration of film formation quality due to gas component mixing and to reduce particles generated during sputtering.
  • the present inventors have conducted extensive research and obtained knowledge that a sputtering target can be manufactured by devising a melting / casting method that has been considered difficult in the past. It was.
  • the present invention 1) A sputtering target containing B obtained by a melting / casting method, wherein the B content is 10 at% or more and 50 at% or less, and the balance is one or more selected from the elements of Co, Fe and Ni
  • the present invention provides a magnetic material sputtering target characterized in that the oxygen content in the target is 100 wtppm or less and there are no cracks or cracks.
  • the above target can further provide a target having a composition in which 0.5 at% or more and 10 at% or less of one or more elements selected from Al, Cu, Mn, Nb, Ta, and Zr are added.
  • the above target has a deviation of Am from the composition A of the component of the entire target (Am-A) /
  • the magnetic material sputtering target according to any one of 1) or 2) above, wherein A is 0.01 or less and excellent in the uniformity of the component composition of the target.
  • an ingot is prepared by melting and casting a raw material consisting of at least one element selected from the elements of Co, Fe, and Ni with a B content of 10 at% or more and 50 at% or less.
  • a method of manufacturing a magnetic material sputtering target is provided, wherein a target is obtained by cutting and machining the substrate.
  • the rapidly cooled ingot can be further heat-treated in the range of 800 to 1150 ° C.
  • the present invention provides this manufacturing method.
  • the present invention provides the method for producing a magnetic material sputtering target according to any one of 4) to 7) above, wherein the oxygen content in the target is 100 wtppm or less.
  • the present invention includes any one of 4) to 8) above, which contains at least one element selected from Al, Cu, Mn, Nb, Ta, and Zr at 0.5 at% or more and 10 at% or less.
  • the manufacturing method of the magnetic material sputtering target of one term is provided.
  • the composition of the main component element, particularly boron (B), in an arbitrary 1 mm square of the target is Am
  • the sputtering target of the present invention is manufactured from a melt-cast ingot, and can obtain a high-density target. Further, since it is a melted product, it has a higher oxygen content than a conventional powder sintered target. An excellent effect that can be significantly reduced can be obtained. Similarly, it is possible to reduce other gas components, which has an effect of suppressing tissue non-uniformity and particle generation due to gas components such as oxygen.
  • the component constituting the sputtering target of the present invention is one or more selected from elements of B content of 10 at% or more and 50 at% or less and the balance of Co, Fe, or Ni. As described above, 0.5 at% or more and 10 at% or less of one or more elements selected from Al, Cu, Mn, Nb, Ta, and Zr can be further added. These are elements added as necessary in order to improve the characteristics as a magnetoresistive element.
  • the B content is 10 at% or more is as follows. If it is less than 10 at%, the production is relatively easy and compositional segregation is small and cracks and cracks are not observed, but desired characteristics cannot be obtained for a magnetic head and MRAM. Normally, a B content of 15 at% or more is desirable in order to take advantage of the characteristics for magnetic heads and MRAMs. However, the effects of no cracks and cracks and no composition segregation have been difficult to realize in the past. In addition, since it is exhibited at a B content of 10 at% or more, at least 10 at% is set as the lower limit.
  • the upper limit of the B content is 50 at%, if the B content exceeds this, the melting point becomes high and the raw material cannot be dissolved. Therefore, 50 at% is set as the upper limit value. Further, in the magnetic head and MRAM, the B content is usually 35 at% or less, and an amount exceeding this is rarely required.
  • melt casting to produce an ingot which is further cut and machined to make a target.
  • These machining processes naturally include adjustment of the target shape and polishing of the target surface so that the function as a target can be sufficiently exhibited in the sputtering apparatus.
  • the above components have different blending ratios depending on the alloy components, but any of them can maintain the characteristics as a magnetic head and an MRAM. Further, as a use other than the magnetic head and the MRAM, the characteristics can be maintained for the use as a general magnetic film corresponding to the above composition range.
  • the melting conditions such as the melting temperature naturally vary depending on the alloy type and the blending ratio, but dissolve in the range of approximately 1100 to 1500 ° C.
  • dissolution pours out into a casting_mold
  • the magnetic material sputtering target can be manufactured by rapidly cooling the mold at 30 to 60 ° C./min to produce an ingot. This is an effective method for suppressing component segregation. In general, slow cooling in a furnace is recommended in order to suppress cracking of the ingot, but this is not preferable because segregation of the composition occurs. Therefore, the rapid cooling described above is a preferable method for the present invention.
  • the composition of the main component element, particularly boron (B), in an arbitrary 1 mm square of the target is Am
  • the deviation of Am from the composition A of the component of the entire target (Am ⁇ A) / A is 0.
  • a target that is .01 or less can be obtained.
  • oxygen concentration can be 100 wtppm or less. Moreover, it is possible to make this 50 wtppm or less, and even 10 wtppm or less. Moreover, about nitrogen of the gas component used as an impurity, it can be 10 wtppm or less, and about 200 wtppm about carbon.
  • the rapidly cooled ingot can be heat-treated in the range of 800 to 1100 ° C. when B is 30 at% or less and in the range of 850 to 1150 ° C. when B exceeds 30 at%. Since this heat treatment temperature can naturally vary depending on the alloy type and the mixing ratio, it can be appropriately selected within the above temperature range.
  • This heat treatment has the effect of removing the strain of the “as-cast” structure and making it uniform. Moreover, it has the effect which can suppress the crack of a target by this heat processing. Prompt heat treatment is desirable for crack suppression. The heat treatment may be performed for 2 hours or more although it depends on the size of the ingot to be treated, and even if it is long, no problem will occur.
  • the casting is usually cooled at 30 to 60 ° C./min. If this is carried out to near room temperature, the ingot may break due to the strain due to the temperature difference between the surface and the inside of the ingot. In order to prevent this, it is effective to implement a heat treatment while cooling the ingot.
  • Example 1 Co, Fe, and B were used as raw materials, and these were blended into Co: 60 at%, Fe: 20 at%, and B 20 at%. Next, this was put into a crucible and melted by heating at 1180 ° C. This was cast into an ingot, rapidly cooled at 50 ° C./minute, heat-treated at 1000 ° C. for 5 hours, and then cooled at 50 ° C./minute. Next, this was cut into a shape having a diameter of 164.0 mm and a thickness of 4.0 mm with a lathe to obtain a target. Table 1 shows analysis values of impurities of this target.
  • Al was less than 10 wtppm
  • Cu was 10 wtppm
  • Ni was 90 wtppm
  • Si was 44 wtppm
  • C was 150 wtppm
  • O was less than 10 wtppm
  • N was less than 10 wtppm.
  • the density of the target of Example 1 was 7.83 g / cm 3 .
  • the composition of the main component element, particularly boron (B), in any 1 mm square of the target is Am
  • the deviation of Am from the composition A of the component in the entire target (Am -A) / A is the boron composition of the target of Example 1 within the range of 19.8 at% to 20.2 at% with respect to the total composition of 20 at%.
  • A) 0.01
  • (Am ⁇ A) / A was 0.01 or less in any point of the target.
  • Al was less than 10 wtppm
  • Cu was 20 wtppm
  • Ni was 110 wtppm
  • Si was 77 wtppm
  • C was 160 wtppm
  • O was 180 wtppm
  • N was less than 10 wtppm.
  • the density of the target was 7.73 g / cm 3 .
  • the deviation of Am from the composition A of the component of the entire target when the composition of the main component element, particularly boron (B), in any 1 mm square of the target is Am. (Am-A) / A was within 0.01 for the target of Comparative Example 1.
  • Example 1 shows that most impurities are reduced as compared with Comparative Example 1. In particular, the reduction of oxygen is significant.
  • the comparative example has a problem that oxygen is 180 wtppm despite the use of atomized powder, and the gas component increases as a target.
  • Example 1 is higher than Comparative Example 1, but this is a natural consequence.
  • Low density means the presence of vacancies, which promotes arcing and particles. Therefore, the improvement in density has a function of suppressing generation of arcing and generation of particles. In this sense, Example 1 is effective.
  • the results were that the saturation magnetization: 4 ⁇ ls (G) and the maximum magnetic permeability: ⁇ max, which are magnetic characteristics, were almost equivalent.
  • Table 2 shows a comparison of characteristics of Example 1 and Comparative Example 1 other than the analyzed values of impurities.
  • Co, Fe, and B were used as raw materials, and these were prepared at Co: 60 at%, Fe: 20 at%, and B: 20 at%. Next, this was put into a crucible and melted by heating at 1180 ° C. This was cast into an ingot, cooled to room temperature at 20 ° C./min, and no heat treatment was performed. At this time, as a result of setting the cooling rate from 1180 ° C. to 20 ° C./min, the index (Am ⁇ A) / A indicating the composition variation in the target was as large as 0.03.
  • Co, Fe, and B were used as raw materials, and these were prepared at Co: 60 at%, Fe: 20 at%, and B: 20 at%. Next, this was put into a crucible and melted by heating at 1180 ° C. This was cast into an ingot. At this time, the cooling rate from 1180 ° C. was set to 40 ° C./min to rapidly cool to room temperature, and no heat treatment was performed. The ingot taken out was cracked.
  • Example 2 to Example 7 Co, Fe: 20 at%, B: 20 at% as basic components, Al: 0.5 at% in Example 2, Cu: 1 at% in Example 3, Mn: 2 at% in Example 4 In Example 5, Nb: 5 at%, in Example 6, Ta: 7 at%, and in Example 7, Zr: 10 at% were added, respectively, to adjust the components to the remaining Co. Next, these were each put in a crucible and dissolved by heating at 1180 ° C. Further, these were cast into ingots, rapidly cooled at 30 to 60 ° C./minute, subjected to heat treatment at 900 to 1100 ° C. for 2 to 20 hours, and then cooled at 30 to 60 ° C./minute. . Next, it was cut into a shape having a diameter of 164.0 mm and a thickness of 4.0 mm with a lathe to obtain a target. Table 1 shows the analysis results of target impurities in this case.
  • Example 2 (Impurity analysis result of Example 2) As shown in Table 1, in Example 2, Cu: less than 10 wtppm, Ni: 86 wtppm, Si: 40 wtppm, C: 160 wtppm, O: 20 wtppm, N: less than 10 wtppm. In Example 2, since Al is added, it is not counted as an impurity. As shown in Table 1 above, it can be seen that Example 2 has almost all impurities reduced compared to Comparative Example 1. In particular, it can be confirmed that the reduction of oxygen is remarkable.
  • Example 3 (Impurity analysis result of Example 3) As shown in Table 1, in Example 3, Al: less than 10 wtppm, Ni: 92 wtppm, Si: 38 wtppm, C: 150 wtppm, O: 10 wtppm, N: less than 10 wtppm. In Example 3, since Cu is added, it is not counted as an impurity. As shown in Table 1 above, it can be seen that Example 3 shows that most impurities are reduced as compared with Comparative Example 1. In particular, it can be confirmed that the reduction of oxygen is remarkable.
  • Example 4 shows that most impurities are reduced as compared with Comparative Example 1. In particular, it can be confirmed that the reduction of oxygen is remarkable.
  • Example 5 (Impurity analysis result of Example 5) As shown in Table 1, in Example 5, Al: less than 10 wtppm, Cu: 15 wtppm, Ni: less than 82 wtppm, Si: 48 wtppm, C: 140 wtppm, O: less than 10 wtppm, and N: less than 10 wtppm. As shown in Table 1 above, it can be seen that Example 5 shows that most impurities are reduced as compared with Comparative Example 1. In particular, it can be confirmed that the reduction of oxygen is remarkable.
  • Example 6 (Results of impurity analysis of Example 6) As shown in Table 1, in Example 6, Al: less than 10 wtppm, Cu: 24 wtppm, Ni: less than 77 wtppm, Si: 50 wtppm, C: 150 wtppm, O: 10 wtppm, N: less than 10 wtppm. As shown in Table 1 above, it can be seen that almost all impurities were reduced in Example 6 compared to Comparative Example 1. In particular, it can be confirmed that the reduction of oxygen is remarkable.
  • Example 7 (Impurity analysis results of Example 7) As shown in Table 1, in Example 7, Al: less than 10 wtppm, Cu: 23 wtppm, Ni: less than 72 wtppm, Si: 46 wtppm, C: 160 wtppm, O: 30 wtppm, N: less than 10 wtppm. As shown in Table 1 above, it can be seen that in Example 7, most impurities were reduced as compared with Comparative Example 1. In particular, it can be confirmed that the reduction of oxygen is remarkable.
  • Example 2 to Example 7 were almost the same as those of Example 1. It has been found that the addition of one or more elements selected from Al, Cu, Mn, Nb, Ta, and Zr in the range of 0.5 at% or more and 10 at% or less does not affect the impurities. Moreover, about the above, even when it added together, the same result was brought.
  • Example 2 Addition of one or more elements selected from Al, Cu, Mn, Nb, Ta, and Zr shown in Example 7 in the range of 0.5 at% or more and 10 at% or less is performed by adding density and magnetic properties (4 ⁇ ls ( G) and ⁇ max) were slightly changed, but were not significantly changed compared to Example 1.
  • density and magnetic properties (4 ⁇ ls ( G) and ⁇ max) were slightly changed, but were not significantly changed compared to Example 1.
  • the composition of boron (B) is Am
  • the deviation (Am-A) / A of the component from the composition A of the target as a whole is 0.01 or less, and a good target is obtained. I was able to.
  • the sputtering target of the present invention is manufactured from a melt-cast ingot, and it is possible to obtain a high-density target. Furthermore, since it is a melted product, the oxygen content is lower than that of a conventional powder sintered target. An excellent effect that can be significantly reduced can be obtained. Similarly, other gas components can be reduced, which has the effect of suppressing the generation of non-uniform tissue and particles caused by gas components such as oxygen. It is useful as a sputtering target for a head or other magnetic film.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)

Abstract

L'invention concerne une cible de pulvérisation cathodique de matériau magnétique qui contient du B et qui est obtenue par un procédé de fusion/coulée. La cible de pulvérisation cathodique de matériau magnétique est caractérisée en ce qu'elle possède une teneur en B de 10 à 50 % atomiques (inclus), le complément étant constitué d'au moins un des éléments suivants : Co, Fe et Ni. La cible de pulvérisation cathodique contient peu d'impuretés gazeuses et est exempte de cassure, fissure et similaire, tout en permettant de supprimer la ségrégation des principaux éléments constitutifs. En conséquence, lorsqu'elle est utilisée dans un appareil de pulvérisation cathodique magnétron qui est équipé d'une alimentation en courant continu, la cible de pulvérisation cathodique atteint des effets significatifs de sorte que la génération de particules est supprimée et que le rendement de formation du film mince est amélioré.
PCT/JP2010/068552 2009-12-11 2010-10-21 Cible de pulvérisation cathodique de matériau magnétique Ceased WO2011070860A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011518968A JP4837805B2 (ja) 2009-12-11 2010-10-21 磁性材スパッタリングターゲット
EP10835782.3A EP2511397B1 (fr) 2009-12-11 2010-10-21 Cible de pulvérisation cathodique de matériau magnétique
CN201080056188.1A CN102652184B (zh) 2009-12-11 2010-10-21 磁性材料溅射靶
US13/513,387 US9269389B2 (en) 2009-12-11 2010-10-21 Sputtering target of magnetic material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009281540 2009-12-11
JP2009-281540 2009-12-11

Publications (1)

Publication Number Publication Date
WO2011070860A1 true WO2011070860A1 (fr) 2011-06-16

Family

ID=44145413

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/068552 Ceased WO2011070860A1 (fr) 2009-12-11 2010-10-21 Cible de pulvérisation cathodique de matériau magnétique

Country Status (7)

Country Link
US (1) US9269389B2 (fr)
EP (1) EP2511397B1 (fr)
JP (1) JP4837805B2 (fr)
CN (1) CN102652184B (fr)
MY (1) MY160809A (fr)
TW (1) TWI480385B (fr)
WO (1) WO2011070860A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5567227B1 (ja) * 2012-09-21 2014-08-06 Ｊｘ日鉱日石金属株式会社 Ｆｅ−Ｐｔ系磁性材焼結体
JP5689543B2 (ja) * 2012-08-31 2015-03-25 Jx日鉱日石金属株式会社 Ｆｅ系磁性材焼結体
WO2015080009A1 (fr) 2013-11-28 2015-06-04 Jx日鉱日石金属株式会社 Cible de pulvérisation en matériau magnétique et sa procédé de production
JP2015129332A (ja) * 2014-01-08 2015-07-16 Jx日鉱日石金属株式会社 磁性材スパッタリングターゲット及びその製造方法
JP2015129331A (ja) * 2014-01-08 2015-07-16 Jx日鉱日石金属株式会社 磁性材スパッタリングターゲット及びその製造方法
JP2017057477A (ja) * 2015-09-18 2017-03-23 山陽特殊製鋼株式会社 ＣｏＦｅＢ系合金ターゲット材
JP2018526525A (ja) * 2015-05-14 2018-09-13 マテリオン コーポレイション スパッタリング標的
KR20190136124A (ko) 2015-03-04 2019-12-09 제이엑스금속주식회사 자성재 스퍼터링 타깃 및 그 제조 방법
WO2020166380A1 (fr) * 2019-02-13 2020-08-20 三井金属鉱業株式会社 Matériau de cible de pulvérisation cathodique
JP2020132995A (ja) * 2019-02-26 2020-08-31 山陽特殊製鋼株式会社 スパッタリングターゲット材に適した合金
US11377726B2 (en) 2015-09-18 2022-07-05 Sanyo Special Steel Co., Ltd. Sputtering target material

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8679268B2 (en) 2010-07-20 2014-03-25 Jx Nippon Mining & Metals Corporation Sputtering target of ferromagnetic material with low generation of particles
US9181617B2 (en) 2010-07-20 2015-11-10 Jx Nippon Mining & Metals Corporation Sputtering target of ferromagnetic material with low generation of particles
MY156386A (en) 2010-08-31 2016-02-15 Jx Nippon Mining & Metals Corp Fe-pt-based ferromagnetic material sputtering target
SG190773A1 (en) 2010-12-21 2013-07-31 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film, and process for production thereof
MY161774A (en) * 2011-09-26 2017-05-15 Jx Nippon Mining & Metals Corp Fe-pt-c based sputtering target
CN104126026B (zh) 2012-02-23 2016-03-23 吉坤日矿日石金属株式会社 含有铬氧化物的强磁性材料溅射靶
CN104170015B (zh) 2012-03-09 2018-08-31 吉坤日矿日石金属株式会社 磁记录介质用溅射靶及其制造方法
US9540724B2 (en) 2012-06-18 2017-01-10 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film
SG11201404072YA (en) 2012-07-20 2014-10-30 Jx Nippon Mining & Metals Corp Sputtering target for forming magnetic recording film and process for producing same
CN103489557B (zh) * 2013-09-22 2016-06-15 清华大学 一种室温透明铁磁半导体材料及其制备方法
JP6285043B2 (ja) 2014-09-22 2018-03-07 Ｊｘ金属株式会社 磁気記録膜形成用スパッタリングターゲット及びその製造方法
KR101953493B1 (ko) * 2014-09-30 2019-02-28 제이엑스금속주식회사 스퍼터링 타깃용 모합금 및 스퍼터링 타깃의 제조 방법
US9752377B2 (en) 2015-03-20 2017-09-05 Cardinal Cg Company Nickel-aluminum blocker film controlled transmission coating
US9469566B2 (en) 2015-03-20 2016-10-18 Cardinal Cg Company Nickel-aluminum blocker film low-emissivity coatings
US9745792B2 (en) 2015-03-20 2017-08-29 Cardinal Cg Company Nickel-aluminum blocker film multiple cavity controlled transmission coating
MY191374A (en) * 2016-12-28 2022-06-21 Jx Nippon Mining & Metals Corp Magnetic material sputtering target and method for manufacturing same
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001107226A (ja) 1999-10-01 2001-04-17 Hitachi Metals Ltd Ｃｏ系ターゲットおよびその製造方法
JP2001181832A (ja) * 1999-12-24 2001-07-03 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットの製造方法
JP2002226970A (ja) * 2000-12-01 2002-08-14 Hitachi Metals Ltd Ｃｏ系ターゲットおよびその製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5538565A (en) 1985-08-13 1996-07-23 Seiko Epson Corporation Rare earth cast alloy permanent magnets and methods of preparation
US5282946A (en) 1991-08-30 1994-02-01 Mitsubishi Materials Corporation Platinum-cobalt alloy sputtering target and method for manufacturing same
US6398880B1 (en) 1996-11-29 2002-06-04 Heraeus, Inc. Magnetic data-storage targets and methods for preparation
JP2000282229A (ja) 1999-03-29 2000-10-10 Hitachi Metals Ltd ＣｏＰｔ系スパッタリングターゲットおよびその製造方法ならびにこれを用いた磁気記録膜およびＣｏＰｔ系磁気記録媒体
US6599377B2 (en) 1999-10-01 2003-07-29 Heraeus, Inc. Wrought processing of brittle target alloy for sputtering applications
JP2001236643A (ja) 2000-02-23 2001-08-31 Fuji Electric Co Ltd 磁気記録媒体製造用スパッタリングターゲット、それを用いた磁気記録媒体の製造方法および磁気記録媒体
US20020106297A1 (en) * 2000-12-01 2002-08-08 Hitachi Metals, Ltd. Co-base target and method of producing the same
US7141208B2 (en) * 2003-04-30 2006-11-28 Hitachi Metals, Ltd. Fe-Co-B alloy target and its production method, and soft magnetic film produced by using such target, and magnetic recording medium and TMR device
JP4827033B2 (ja) 2004-03-01 2011-11-30 Ｊｘ日鉱日石金属株式会社 表面欠陥の少ないスパッタリングターゲット及びその表面加工方法
WO2005093124A1 (fr) * 2004-03-26 2005-10-06 Nippon Mining & Metals Co., Ltd. CIBLE DE PULVERISATION CATHODIQUE D’ALLIAGE A BASE Co-Cr-Pt-B
US7381282B2 (en) 2004-04-07 2008-06-03 Hitachi Metals, Ltd. Co alloy target and its production method, soft magnetic film for perpendicular magnetic recording and perpendicular magnetic recording medium
TWI270060B (en) 2004-06-07 2007-01-01 Showa Denko Kk Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus
JP4466925B2 (ja) 2004-08-10 2010-05-26 日鉱金属株式会社 フレキシブル銅基板用バリア膜及びバリア膜形成用スパッタリングターゲット
US9034153B2 (en) 2006-01-13 2015-05-19 Jx Nippon Mining & Metals Corporation Nonmagnetic material particle dispersed ferromagnetic material sputtering target
TW200808980A (en) 2006-03-31 2008-02-16 Mitsubishi Materials Corp Method for producing Co-based sintered alloy sputtering target used for forming magnetic recording film with reduced generation of particles, and Co-based sintered alloy sputtering target used for forming magnetic recording film
US20080105542A1 (en) * 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
JP2008121071A (ja) * 2006-11-13 2008-05-29 Sanyo Special Steel Co Ltd 軟磁性ＦｅＣｏ系ターゲット材
JP5155565B2 (ja) 2007-01-04 2013-03-06 三井金属鉱業株式会社 ＣｏＣｒＰｔ系スパッタリングターゲットおよびその製造方法
US20080173543A1 (en) 2007-01-19 2008-07-24 Heraeus Inc. Low oxygen content, crack-free heusler and heusler-like alloys & deposition sources & methods of making same
CN101230425A (zh) * 2007-01-19 2008-07-30 贺利氏有限公司 低氧含量、无裂纹霍伊斯勒和类霍伊斯勒合金以及沉积源及其制造方法
US7754027B2 (en) 2007-08-27 2010-07-13 China Steel Corporation Method for manufacturing a sputtering target
MY145087A (en) 2008-03-28 2011-12-30 Jx Nippon Mining & Metals Corp Sputtering target of nonmagnetic-particle-dispersed ferromagnetic material
CN102066025A (zh) 2008-08-28 2011-05-18 Jx日矿日石金属株式会社 包含贵金属粉末和氧化物粉末的混合粉末的制造方法及包含贵金属粉末和氧化物粉末的混合粉末
SG173128A1 (en) 2009-03-03 2011-08-29 Jx Nippon Mining & Metals Corp Sputtering target and process for producing same
MY150804A (en) 2009-03-27 2014-02-28 Jx Nippon Mining & Metals Corp Nonmagnetic material particle-dispersed ferromagnetic material sputtering target
CN102482764B (zh) 2009-08-06 2014-06-18 吉坤日矿日石金属株式会社 无机物粒子分散型溅射靶
US8679268B2 (en) 2010-07-20 2014-03-25 Jx Nippon Mining & Metals Corporation Sputtering target of ferromagnetic material with low generation of particles
MY157110A (en) 2010-12-17 2016-05-13 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film and method for producing same
JP5654126B2 (ja) 2011-06-30 2015-01-14 Jx日鉱日石金属株式会社 Ｃｏ−Ｃｒ−Ｐｔ−Ｂ系合金スパッタリングターゲット及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001107226A (ja) 1999-10-01 2001-04-17 Hitachi Metals Ltd Ｃｏ系ターゲットおよびその製造方法
JP2001181832A (ja) * 1999-12-24 2001-07-03 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットの製造方法
JP2002226970A (ja) * 2000-12-01 2002-08-14 Hitachi Metals Ltd Ｃｏ系ターゲットおよびその製造方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5689543B2 (ja) * 2012-08-31 2015-03-25 Jx日鉱日石金属株式会社 Ｆｅ系磁性材焼結体
JP5567227B1 (ja) * 2012-09-21 2014-08-06 Ｊｘ日鉱日石金属株式会社 Ｆｅ−Ｐｔ系磁性材焼結体
KR20180088491A (ko) 2013-11-28 2018-08-03 제이엑스금속주식회사 자성재 스퍼터링 타깃 및 그 제조 방법
WO2015080009A1 (fr) 2013-11-28 2015-06-04 Jx日鉱日石金属株式会社 Cible de pulvérisation en matériau magnétique et sa procédé de production
KR20160075723A (ko) 2013-11-28 2016-06-29 제이엑스금속주식회사 자성재 스퍼터링 타깃 및 그 제조 방법
JPWO2015080009A1 (ja) * 2013-11-28 2017-03-16 Ｊｘ金属株式会社 磁性材スパッタリングターゲット及びその製造方法
JP2015129332A (ja) * 2014-01-08 2015-07-16 Jx日鉱日石金属株式会社 磁性材スパッタリングターゲット及びその製造方法
JP2015129331A (ja) * 2014-01-08 2015-07-16 Jx日鉱日石金属株式会社 磁性材スパッタリングターゲット及びその製造方法
KR20190136124A (ko) 2015-03-04 2019-12-09 제이엑스금속주식회사 자성재 스퍼터링 타깃 및 그 제조 방법
JP2018526525A (ja) * 2015-05-14 2018-09-13 マテリオン コーポレイション スパッタリング標的
US11377726B2 (en) 2015-09-18 2022-07-05 Sanyo Special Steel Co., Ltd. Sputtering target material
EP3351654A4 (fr) * 2015-09-18 2019-04-17 Sanyo Special Steel Co., Ltd. Matériau de cible de pulvérisation cathodique
JP2017057477A (ja) * 2015-09-18 2017-03-23 山陽特殊製鋼株式会社 ＣｏＦｅＢ系合金ターゲット材
US10844476B2 (en) 2015-09-18 2020-11-24 Sanyo Special Steel Co., Ltd. Sputtering target material
WO2017047753A1 (fr) * 2015-09-18 2017-03-23 山陽特殊製鋼株式会社 Matériau de cible de pulvérisation cathodique
WO2020166380A1 (fr) * 2019-02-13 2020-08-20 三井金属鉱業株式会社 Matériau de cible de pulvérisation cathodique
JPWO2020166380A1 (ja) * 2019-02-13 2021-12-16 三井金属鉱業株式会社 スパッタリングターゲット材
JP7422095B2 (ja) 2019-02-13 2024-01-25 三井金属鉱業株式会社 スパッタリングターゲット材
JP2020132995A (ja) * 2019-02-26 2020-08-31 山陽特殊製鋼株式会社 スパッタリングターゲット材に適した合金
WO2020175424A1 (fr) * 2019-02-26 2020-09-03 山陽特殊製鋼株式会社 Alliage approprié pour un matériau cible de pulvérisation
CN113453823A (zh) * 2019-02-26 2021-09-28 山阳特殊制钢株式会社 适合于溅射靶材的合金
EP3932592A4 (fr) * 2019-02-26 2022-09-07 Sanyo Special Steel Co., Ltd. Alliage approprié pour un matériau cible de pulvérisation
JP7382142B2 (ja) 2019-02-26 2023-11-16 山陽特殊製鋼株式会社 スパッタリングターゲット材に適した合金

Also Published As

Publication number Publication date
EP2511397A1 (fr) 2012-10-17
US9269389B2 (en) 2016-02-23
EP2511397B1 (fr) 2018-09-26
EP2511397A4 (fr) 2014-01-01
JP4837805B2 (ja) 2011-12-14
CN102652184A (zh) 2012-08-29
CN102652184B (zh) 2014-08-06
MY160809A (en) 2017-03-31
TWI480385B (zh) 2015-04-11
JPWO2011070860A1 (ja) 2013-04-22
US20120241316A1 (en) 2012-09-27
TW201120224A (en) 2011-06-16

Similar Documents

Publication Publication Date Title
JP4837805B2 (ja) 磁性材スパッタリングターゲット
JP5290393B2 (ja) タンタルスパッタリングターゲット
JP6483803B2 (ja) 磁性材スパッタリングターゲット及びその製造方法
JP5144760B2 (ja) タンタルスパッタリングターゲット
JP4920789B2 (ja) タンタルスパッタリングターゲット
JP5969138B2 (ja) タンタルスパッタリングターゲット
JP5389955B2 (ja) タンタルスパッタリングターゲット
JP5524976B2 (ja) タンタルスパッタリングターゲット
JP5654126B2 (ja) Ｃｏ−Ｃｒ−Ｐｔ−Ｂ系合金スパッタリングターゲット及びその製造方法
TW201309828A (zh) 濺鍍用鈦靶
WO2016186070A1 (fr) Cible de pulvérisation d'alliage de cuivre et son procédé de production
JP6231035B2 (ja) 磁気記録媒体用スパッタリングターゲットの製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080056188.1

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2011518968

Country of ref document: JP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10835782

Country of ref document: EP

Kind code of ref document: A1

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10835782

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2010835782

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 13513387

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE