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WO2010119687A1 - Procédé de production de matériau conducteur transparent - Google Patents

Procédé de production de matériau conducteur transparent Download PDF

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Publication number
WO2010119687A1
WO2010119687A1 PCT/JP2010/002730 JP2010002730W WO2010119687A1 WO 2010119687 A1 WO2010119687 A1 WO 2010119687A1 JP 2010002730 W JP2010002730 W JP 2010002730W WO 2010119687 A1 WO2010119687 A1 WO 2010119687A1
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WIPO (PCT)
Prior art keywords
transparent conductive
conductive material
film
nitride film
substrate
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PCT/JP2010/002730
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English (en)
Japanese (ja)
Inventor
光本竜一
白川彰彦
時田孝二
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Resonac Holdings Corp
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Showa Denko KK
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Priority to JP2010525127A priority Critical patent/JP4592829B1/ja
Publication of WO2010119687A1 publication Critical patent/WO2010119687A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a method for producing a transparent conductive material in which a highly transparent and highly conductive film is laminated on a transparent substrate. More specifically, the present invention relates to a novel transparent conductive material production method capable of forming a highly transparent and highly conductive film on a low heat resistant substrate such as a transparent resin film.
  • a transparent conductive film is a thin film having conductivity despite being transparent.
  • Transparent conductive films can be used for transparent electrodes for liquid crystal displays (LCD), electroluminescence (EL) displays, plasma displays (PDP), field emission displays (FED), etc., and for solar cell panels. An electrode etc. are mentioned. It is also applied to electromagnetic shielding plates.
  • a typical example of the transparent conductive film is a thin film made of an oxide of indium and tin (ITO). Since this ITO film has high transparency and high conductivity, it is widely used now. However, indium is a rare metal element, and the cost of raw materials may increase with increasing demand and resource depletion.
  • Non-Patent Document 1 discloses an Nb-doped TiO 2 epitaxial thin film (TNO) having an anatase-type crystal structure, an oxygen deficient or Sb-doped SrTiO 3 film having a perovskite-type crystal structure, etc. Has been introduced.
  • TNO Nb-doped TiO 2 epitaxial thin film
  • Patent Document 1 discloses a transparent conductor made of M: TiO 2 having an anatase type crystal structure. As M, Nb, Ta or the like is shown. This conductor seems to be manufactured by depositing M: TiO 2 on the SrTiO 3 substrate by the pulse laser deposition (PLD) method.
  • PLD pulse laser deposition
  • a sintered body of niobium oxide and titanium oxide is used as a target, and film formation is performed by irradiating a pulse laser in an oxygen atmosphere under reduced pressure.
  • Patent Document 1 does not show an example of forming a film by a method other than the PLD method, but utilizes a molecular beam epitaxial (MBE) method, a sputtering method, another physical vapor deposition (PVD) method, or an MOCVD method.
  • MBE molecular beam epitaxial
  • PVD physical vapor deposition
  • MOCVD MOCVD
  • the chemical vapor deposition (CVD) method, the sol-gel method, the chemical solution method and the like can be used.
  • the production method of Patent Document 1 has low production efficiency of M: TiO 2 having an anatase type crystal structure, and industrial feasibility is low.
  • Patent Document 2 describes a high refractive index transparent thin film layer containing hydrogen atoms in a specific ratio.
  • the transparent thin film layer can be formed by sputtering in a hydrogen gas atmosphere using a metal oxide such as tin oxide, indium oxide, zinc oxide, niobium oxide, and titanium oxide as a target material.
  • a metal oxide such as tin oxide, indium oxide, zinc oxide, niobium oxide, and titanium oxide
  • hydrogen is included in the film, the transparency of the film is lowered, making it unsuitable for applications such as transparent electrodes.
  • Patent Document 3 discloses Nb, Ta, and Pt as methods for overcoming the drawbacks of the conductors obtained by the methods described in Patent Document 1 and Patent Document 2 (low productivity of PLD method, reduced transparency due to use of hydrogen).
  • a method for producing a conductor comprising: forming a precursor layer made of titanium oxide to which a dopant is added on a substrate surface; and annealing the precursor layer in a reducing atmosphere to form a metal oxide layer Has proposed. The annealing requires that the substrate temperature be 300 ° C. or higher.
  • Non-patent Document 5 proposes a method combining titanium vapor deposition and a nitrogen ion beam as a method for providing both transparency and conductivity to the titanium nitride film.
  • this method since the nitrogen ion beam is not suitable for processing of a large area, this method has low industrial feasibility (Non-patent Document 6).
  • Patent Document 4 proposes that a capacitor material is manufactured by anodizing the surface of titanium nitride to form titanium oxide, and sandwiching the titanium oxide as a dielectric between electrodes.
  • Non-Patent Document 3 and Non-Patent Document 4 report a behavior in which an insulating titanium oxide is replaced from the surface side of a conductive titanium nitride film in the anodic oxidation of titanium nitride at room temperature.
  • Non-Patent Document 2 discloses that titanium nitride is 22 ° C. and 38% H. Oxidation behavior in the atmosphere has been reported.
  • these documents are reports on forming a titanium nitride film into an insulating film. As described above, the titanium nitride film has not yet been successfully combined with high conductivity and high transparency.
  • an object of the present invention is to provide a novel method for producing a transparent conductive material capable of forming a highly transparent and highly conductive film on a low heat resistant substrate such as a transparent resin film. It is.
  • Titanium nitride containing at least one dissimilar metal element selected from the group consisting of Zr, Hf, Nb, Ta, Mo and W ii) Niobium nitride containing at least one different metal element selected from the group consisting of Mo and W, and / or iii) Tantalum nitride containing at least one different metal element selected from the group consisting of Mo and W
  • Tiobium nitride containing at least one different metal element selected from the group consisting of Mo and W
  • Tantalum nitride containing at least one different metal element selected from the group consisting of Mo and W It has been found that when a nitride film is formed on a substrate and the nitride film is anodized at a low temperature, the nitride film is formed into a film having good conductivity and transparency. As a result of further investigation based on this knowledge, it was found that a highly transparent and highly conductive film can be easily formed even on a low heat
  • the present invention is as follows. ⁇ 1> Titanium nitride containing at least one different metal element selected from the group consisting of Zr, Hf, Nb, Ta, Mo and W, at least one different metal element selected from the group consisting of Mo and W Forming a nitride film made of tantalum nitride containing niobium nitride and / or at least one dissimilar metal element selected from the group consisting of Mo and W on a substrate; A method for producing a transparent conductive material, comprising a step of anodizing all or part of the nitride film at 0 ° C. or less.
  • ⁇ 2> The method for producing a transparent conductive material according to ⁇ 1>, wherein the substrate is made of at least one material selected from the group consisting of glass, resin, and semiconductor material.
  • ⁇ 3> The method for producing a transparent conductive material according to ⁇ 1> or ⁇ 2>, wherein the substrate is a flat plate, a sheet, or a film.
  • the nitride film is formed by at least one method selected from the group consisting of a physical vapor deposition method, a chemical vapor deposition method, a sol-gel method, and a synthesis method from a solution.
  • ⁇ 5> The method for producing a transparent conductive material according to any one of ⁇ 1> to ⁇ 4>, wherein the total content of the different metal elements in the nitride film is 1 to 10 atomic%.
  • ⁇ 6> The method for producing a transparent conductive material according to any one of ⁇ 1> to ⁇ 5>, wherein the nitride film has a thickness of 10 to 200 nm.
  • ⁇ 7> The method for producing a transparent conductive material according to any one of ⁇ 1> to ⁇ 6>, wherein the anodic oxidation is performed in an aqueous solution containing an acid or a salt thereof, hydrogen peroxide, and an antifreezing agent.
  • ⁇ 8> The method for producing a transparent conductive material according to any one of ⁇ 1> to ⁇ 7>, wherein the anodic oxidation is performed at ⁇ 30 ° C. to ⁇ 3 ° C.
  • ⁇ 9> The method for producing a transparent conductive material according to any one of ⁇ 1> to ⁇ 8>, wherein the anodic oxidation voltage is 0.75 to 1.25 V per 1 nm of the thickness of the nitride film.
  • the manufacturing method of the transparent conductive material of description. ⁇ 11> The transparent conductive material according to any one of ⁇ 1> to ⁇ 10>, wherein the current density until the applied voltage reaches a specified anodic oxidation voltage is 0.1 to 1000 mA / cm 2 . Material manufacturing method.
  • ⁇ 12> A transparent conductive material having an anodized nitride film obtained by the production method according to any one of ⁇ 1> to ⁇ 11>.
  • ⁇ 13> The transparent conductive material according to ⁇ 12>, wherein the anodized nitride film is amorphous.
  • the anodized nitride film has a thickness of 10 to 250 nm, a resistivity of 10 ⁇ 2 to 10 ⁇ 4 ⁇ ⁇ cm, and a transmittance of 50% in the wavelength range of 360 nm to 2.4 ⁇ m.
  • the transparent conductive material according to the above ⁇ 12> or ⁇ 13> The transparent conductive material according to the above ⁇ 12> or ⁇ 13>.
  • An electronic device comprising the transparent conductive material according to any one of ⁇ 12> to ⁇ 14>.
  • a solar cell comprising the transparent conductive material according to any one of ⁇ 12> to ⁇ 14>.
  • ⁇ 18> A method for producing a transparent conductive film, comprising the steps of obtaining a transparent conductive material by the production method according to any one of ⁇ 1> to ⁇ 11> and then removing the substrate.
  • ⁇ 19> A transparent conductive film obtained by the production method according to ⁇ 18>.
  • ⁇ 20> A transparent electrode comprising the transparent conductive film according to ⁇ 19>.
  • An electronic device comprising the transparent conductive film according to ⁇ 19>.
  • ⁇ 22> A solar cell comprising the transparent conductive film according to ⁇ 19>.
  • a transparent conductive material having both good transparency and conductivity can be produced with high productivity. Further, according to the production method of the present invention, even if the base of the transparent conductive material is a material that does not have heat resistance, the transparent conductive film can be easily manufactured on the base.
  • FIG. 1 It is a conceptual sectional view showing an example of the transparent conductive material of the present invention. It is a figure which shows the wavelength dependence of the transmittance
  • FIG. 2 It is a figure which shows the wavelength dependence of the transmittance
  • FIG. It is a figure which shows the wavelength dependence of the transmittance
  • FIG. It is a figure which shows the wavelength dependence of the transmittance
  • FIG. It is a figure which shows the wavelength dependence of the transmittance
  • FIG. 1 is a conceptual cross-sectional view showing an embodiment of the transparent conductive material of the present invention.
  • a nitride thin film 2 containing a different metal element is formed on the surface of the substrate 1, and then the nitride film 2 is anodized at 0 ° C. or less to form a transparent conductive film 3.
  • the transparent conductive material 10 can be obtained.
  • the substrate 1 is not particularly limited by the material, shape, etc. as long as the nitride film 2 can be formed. Therefore, it may be a substrate made of an inorganic material or a substrate made of an organic material. Further, it may be a base made of a single crystalline or polycrystalline crystalline material, a base made of an amorphous material, or a material in which these crystalline states are mixed. It may be a substrate.
  • materials used for the substrate include glass, quartz, resin, semiconductor materials such as silicon and GaN, single crystal or polycrystalline material of strontium titanate (SrTiO 3 ), perovskite crystal structure or a similar structure.
  • materials used for the substrate include glass, quartz, resin, semiconductor materials such as silicon and GaN, single crystal or polycrystalline material of strontium titanate (SrTiO 3 ), perovskite crystal structure or a similar structure.
  • Examples thereof include single crystal or polycrystal materials made of rock salt type crystals. These may contain dopants, impurities and the like as long as the effects of the present invention are not impaired.
  • the resin examples include polystyrene, polycarbonate, polyethylene, polypropylene, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyarylate (PAR), triacetyl cellulose (TAC), polyether ether ketone (PEEK), and polysulfone (PSF). ), Polyethersulfone (PES), polyamide, polyimide, epoxy resin, (meth) acrylic resin, and the like. A transparent resin is preferable.
  • the substrate is preferably a flat plate, a sheet, or a film as a shape.
  • the thickness of the substrate of these shapes is not particularly limited, but is preferably 1 mm or less when the substrate is required to have high transparency, and the substrate is required to have high mechanical strength and the light transmittance may be somewhat sacrificed. May be thicker than 1 mm. Therefore, the thickness of the substrate may be 0.02 to 10 mm, for example.
  • the substrate may be a flexible sheet or film. By using a flexible resin sheet or resin film as the substrate, an organic EL display, a solar cell, or the like that can be folded or rolled can be manufactured. Further, a hard coat layer may be provided to increase the hardness of the resin film surface. In addition, a gas barrier layer may be provided on the resin film in order to improve the moisture resistance of the organic EL display.
  • the glass substrate with ITO of the liquid crystal display element or the glass substrate with SnO 2 of the solar cell can be replaced with the transparent conductive material of the present invention.
  • the glass plate those having almost no warping or scratches on the surface and excellent thermal stability are preferable.
  • an antireflection layer, an antiglare layer, an antifouling layer, or the like may be formed on the substrate.
  • the transparent conductive film 3 can be obtained as an independent film by dissolving and removing the substrate after anodic oxidation.
  • it is possible to devise measures such as protecting the substrate with a masking material or the like so that the substrate is not eroded by the electrolytic solution.
  • the transparent conductive film as an independent film can be used for applications such as attaching to a part of a liquid crystal display element to give a touch panel function.
  • the surface of the substrate is flat so as not to impair the optical properties as the transparent conductive material.
  • a polished substrate can be used.
  • the polishing method is not particularly limited, and for example, it can be polished using diamond slurry or colloidal silica as an abrasive. By polishing, the surface roughness may be flattened until the root mean square roughness (rms) is 1 nm or less.
  • the nitride film 2 Before the nitride film 2 is formed, it is preferable to clean the surface of the substrate 1. For example, when using a glass plate or silicon substrate as the substrate, perform ultrasonic cleaning with acetone, ethanol, etc., or cleaning with an acid such as hydrochloric acid, rinse with pure water, etc. if necessary, and then use nitrogen gas. Moisture can be removed from the substrate surface by spraying on the substrate surface. It is considered that the cleaning removes oxides, organic substances, and the like from the surface of the substrate, improving the flatness of the transparent conductive film 3 and the adhesion to the substrate.
  • the nitride film 2 includes titanium nitride as a main component and includes at least one selected from the group consisting of Zr, Hf, Nb, Ta, Mo and W as a dissimilar metal element; niobium nitride as a main component, Mo and A film containing at least one selected from the group consisting of W as a foreign metal element; and / or a film containing tantalum nitride as a main component and at least one selected from the group consisting of Mo and W as a foreign metal element.
  • a main component is a component containing 50 mass% or more.
  • the nitride film 2 may contain a dopant other than the dissimilar metal element, an unavoidable impurity, or an impurity other than the unavoidable impurity as long as the effects of the present invention are not impaired.
  • the total content of the different metal elements in the nitride film is preferably 1 to 10 atomic%, more preferably 2 to 7 atomic%, and more preferably 3 to 5 atomic%. Further preferred.
  • the atomic% is a ratio in which the total amount of Ti, Zr, Hf, Nb, Ta, Mo, and W in the nitride film is 100 atomic%.
  • the ratio is such that the total amount of Nb, Mo and W in the nitride film is 100 atomic%; in the case of a nitride film containing tantalum nitride as the main component The ratio of the total amount of Ta, Mo and W in the nitride film to 100 atomic%.
  • the thickness of the nitride film 2 is not particularly limited, but is preferably in the range of 10 to 200 nm, more preferably 10 to 100 nm, and particularly preferably 10 to 30 nm. If it is this range, high transparency and electroconductivity will be easy to be obtained.
  • a transparent conductive film is formed. In order to turn a thick nitride film into a transparent conductive film, anodization must be performed at a higher voltage than in the case of a thin nitride film. In general, a thin conductive film tends to be less conductive than a thick conductive film. However, as shown in the examples described later, even if the film is not so thick, according to the method of the present invention, a material having sufficient conductivity can be obtained.
  • the nitride film can be formed by appropriately using a known film forming method. Specifically, a synthesis method from a solution such as a physical vapor deposition (PVD) method such as a vapor deposition method or a reactive sputtering method, a chemical vapor deposition (CVD) method such as an MOCVD method, a sol-gel method, or a chemical solution method. Can be mentioned. In a synthesis method from a solution such as a sol-gel method or a chemical solution method, a pattern can be formed using ink jet printing.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • the vapor deposition method is preferable in that the film forming speed is high.
  • the reactive sputtering method is particularly preferable in that a large area film can be formed as used in the production of a large liquid crystal display. Therefore, the method of forming a nitride film in the present invention will be described by taking a reactive sputtering method as an example.
  • a known sputtering apparatus can be used as appropriate.
  • a DC magnetron sputtering apparatus can be used.
  • a material of titanium nitride and a different metal element is used as a target.
  • a titanium nitride target in which a different metal element is uniformly added at an arbitrary composition ratio may be manufactured and used.
  • a method for easily changing the composition ratio of the nitride film a method of disposing a chip or the like of a different metal material on a titanium nitride target can be used.
  • the ratio of the metal elements in the nitride film is substantially determined by the area ratio between the titanium nitride target and the dissimilar metal material chip, the size of the dissimilar metal material chip is adjusted so that the resulting nitride film has the desired composition ratio.
  • Titanium nitride, niobium nitride, or tantalum nitride usually has a golden or yellow-red color, but when the nitride is made into a thin film of several tens of nanometers or less, it becomes a transparent dark brown . By observing the thin film and examining the color unevenness, it is possible to easily determine whether or not a thin film having a uniform film quality has been formed.
  • the pressure in the vacuum chamber is reduced to about 5 ⁇ 10 ⁇ 5 Pa or less by a pump, an inert gas is introduced as a sputtering gas, and the pressure is adjusted to a predetermined sputtering pressure.
  • the sputtering pressure is preferably about 0.1 to 5 Pa.
  • the inert gas one or more selected from the group consisting of Ar, He, Ne, Kr and Xe can be used. Further, a reducing gas such as H 2 may be introduced so as not to lower the sputtering rate.
  • a predetermined voltage is applied to the target while maintaining the sputtering pressure.
  • the substrate may be heated or not heated when the voltage is applied. Considering the heat resistance of the substrate, if necessary, the substrate may be cooled so that the temperature of the substrate is kept at about room temperature.
  • a method of using a metal titanium target instead of the titanium nitride target there is a method of using a metal titanium target instead of the titanium nitride target.
  • a metal titanium target instead of the titanium nitride target.
  • an inert gas not only an inert gas but also a nitrogen gas is introduced as a sputtering gas.
  • the ratio of nitrogen gas to inert gas is preferably about 10%. Titanium metal jumping out of the metal titanium target by sputtering reacts with nitrogen gas to produce titanium nitride. It can be deposited on the substrate to form a titanium nitride film.
  • the transparent conductive material obtained by anodizing a nitride film based on titanium nitride is more suitable for the substrate.
  • High adhesion This is presumed that even after the transparent conductive film is formed by anodic oxidation, titanium nitride exists in a slight amount at the interface with the base, and the adhesion of the transparent conductive film to the base is increased. .
  • the method of forming the nitride film mainly composed of titanium nitride has been described as an example.
  • the formation of the nitride film mainly composed of niobium nitride and the nitride film mainly composed of tantalum nitride is performed.
  • the same method as described above can be used.
  • a sputtering method may be mentioned in which the titanium nitride target is replaced with a niobium nitride target or a tantalum nitride target.
  • a metal niobium or metal tantalum target mixing nitrogen gas into the sputtering gas, performing sputtering, and forming a niobium nitride film or tantalum nitride film while reacting metal niobium or metal tantalum with nitrogen gas can do.
  • the nitride film 2 formed as described above is stable, natural oxidation does not proceed in a short time. Nevertheless, it is preferable to perform anodic oxidation promptly (within 3 hours as exposure time in the air) after forming the nitride film 2 from the viewpoint of preventing the growth of an extremely thin natural oxide film. Further, the formed nitride film can be stored in ethanol or the like. By doing in this way, the film
  • the nitride film 2 is anodized at 0 ° C. or lower.
  • the chemical composition of the anodized nitride film is unknown, but when anodized at 0 ° C. or less, the nitride film is formed into a film 3 having both transparency and conductivity.
  • Anodization is usually performed by sinking a nitride film in an electrolytic solution and applying a voltage using the nitride film as an anode.
  • the nitride film surface may be covered with a masking material and then anodized.
  • the electrolytic solution used for anodization is a solution containing an acid and / or a salt thereof.
  • the acid and / or salt thereof include phosphoric acid, sulfuric acid, nitric acid, succinic acid, boric acid, adipic acid, and salts thereof. Of these, phosphoric acid and its salts are preferred.
  • the pH of the electrolyte is preferably 0-11. If it is this range, it will be easy to handle industrially and anodization can be performed stably.
  • the concentration of phosphoric acid or a salt thereof in the electrolytic solution is preferably 1 mM to 1M, and more preferably 0.2M to 1M.
  • hydrogen peroxide is included in the electrolytic solution from the viewpoint that anodization can be stably performed.
  • concentration of hydrogen peroxide in the electrolytic solution is preferably maintained to be 0.1 to 50% by mass, more preferably 0.1 to 40% by mass, and 0.2 to More preferably, it is maintained at 20% by mass.
  • hydrogen peroxide functions as a depolarizer to prevent hydrogen gas bubbles, which are said to be generated on the anode, or as an oxidizer that helps anodize. It is estimated that
  • the temperature during anodization is 0 ° C. or lower, preferably ⁇ 30 ° C. to ⁇ 3 ° C., more preferably ⁇ 13 ° C. to ⁇ 7 ° C.
  • the crystallization of the transparent conductive film proceeds.
  • the amount of the antifreezing agent described later must be increased. Since the addition of the antifreezing agent increases the resistance value of the electrolytic solution, the amount of heat generated during anodization increases, and a device for maintaining a low temperature is required.
  • an appropriate amount of an antifreezing agent can be added to the electrolytic solution according to a desired anodizing temperature.
  • the antifreezing agent include methanol, ethanol, diethylene glycol, ethylene glycol, glycerin, 1-propanol, 2-propanol, butanol and the like. If these antifreezing agents are added too much, the resistance of the electrolyte increases and the amount of heat generation increases. Therefore, it is most preferred to add the antifreeze agent in the minimum amount that can prevent freezing at the anodization temperature.
  • the temperature may rise partially due to energization during anodic oxidation and heat generation due to oxidation reaction. Even if such a partial temperature rise occurs, the nitride film 2 must be actively maintained in an environment where the temperature is 0 ° C. or lower. For example, it may be maintained at 0 ° C. or lower while circulating the electrolyte using a circulation cooler or the like. Furthermore, it is preferable to keep the environment around the anodizing device at a low temperature using a thermostatic bath or a thermostatic chamber from the viewpoint of suppressing temperature changes.
  • Anodization is performed, for example, with the following voltage-current.
  • the applied voltage is gradually increased so as to have a constant current density (constant current anodization process), and after reaching a specified voltage (anodization voltage), it is maintained at a constant voltage. (Constant voltage anodizing process).
  • the anodic oxidation voltage is defined according to the thickness of the nitride film.
  • the anodizing voltage is preferably 0.75 to 1.25 V per 1 nm thickness of the nitride film.
  • the current density until the applied voltage reaches the specified anodizing voltage is preferably 0.1 to 1000 mA / cm 2, and preferably 0.1 to 100 mA / cm 2. Is more preferable. If the current density is too low, the time required for anodic oxidation becomes longer. On the other hand, if the current density is too high, the amount of heat generation increases, so the cooling device becomes large.
  • the time from when the anodic oxidation voltage is reached to when the anodic oxidation is stopped is preferably 0 to 400 minutes. If it is this range, possibility that crystal growth will arise in a transparent conductive film is low.
  • the transparent conductive film 3 can be obtained.
  • the transparent conductive film 3 thus obtained has good transparency and conductivity.
  • the resistivity of the transparent conductive film 3 is usually 10 ⁇ 2 ⁇ ⁇ cm to 10 ⁇ 4 ⁇ ⁇ cm at room temperature.
  • a conductor means one having a resistivity at room temperature of 10 0 ⁇ ⁇ cm or less.
  • the resistivity at room temperature is 10 ⁇ 3 ⁇ ⁇ cm or less, the application is further expanded. From such points, the transparent conductive film of the present invention is excellent as a conductor.
  • the transparent conductive film 3 obtained by anodic oxidation of the nitride film 2 is preferably amorphous. Even if a few crystal grains are present in the transparent conductive film 3, there is no problem, but if this crystal grows, the transmittance tends to decrease. Since the transparent conductive film is amorphous, even if the film is bent or rolled, the conductivity and transparency are not easily lowered. Note that the refractive index (wavelength 632.8 nm) of amorphous titanium oxide is about 1.90 to about 2.35, which is lower than the refractive index of crystalline titanium oxide.
  • the transparent conductive material or transparent conductive film obtained by the production method of the present invention has good transparency. Specifically, a transmittance of 50% or more can be obtained in a wide range including visible light having a wavelength of 360 nm to 2.4 ⁇ m. Therefore, it is suitable as a conductor that requires transparency in a wide wavelength range.
  • the thickness of the transparent conductive film is preferably 10 to 250 nm from the viewpoint of achieving both transparency and conductivity.
  • the transparent conductive film having a thickness of 10 to 250 nm can be obtained, for example, by anodizing the nitride film 2 having a thickness of 10 to 200 nm according to the present invention.
  • the manufacturing method of the present invention does not require an annealing treatment at a high temperature as described in Patent Document 3, not only on a substrate made of a high heat-resistant material such as a glass substrate and a silicon substrate, but also polyethylene, polypropylene, and polyethylene terephthalate.
  • a transparent conductive film can also be formed on a substrate made of a low heat resistant material such as a resin. Therefore, the range of substrate selection is wide and manufacturing is easy. If the substrate is a thin resin sheet, it can be rolled by hand and has a wide range of applicable applications. Thus, if the method of this invention is used, the transparent conductive material 10 which formed the transparent conductive film 3 on the various base
  • the transparent conductive material and the transparent conductive film obtained by the production method of the present invention have a wide range of applications and can be used for various electronic devices.
  • application to transparent electrodes such as flat panel displays, solar cells, and touch panels is conceivable.
  • it can be applied to electromagnetic wave shielding used for the antireflection film, a film that prevents dust from being attached by static electricity, an antistatic film, and ultraviolet reflection glass.
  • a nitride film having a sufficient thickness or more is formed on a substrate by sputtering and only the surface layer of the film is anodized, a layer made of a nitride film that has not been anodized and anodization of the nitride
  • the present invention can also be applied as a multilayer antireflection film having a layer made of the obtained transparent conductive film.
  • transparent electrodes examples include dye-sensitized solar cells, display panels, organic EL panels, light-emitting elements, light-emitting diodes (LEDs), white LEDs and laser transparent electrodes, surface-emitting laser transparent electrodes, illumination devices, and optical communications Examples thereof include devices.
  • a transparent conductive film in a liquid crystal display LCD
  • a transparent conductive film in a color filter portion of the LCD a transparent conductive film in an EL (Electro Luminescence) display
  • a plasma display panel PDP
  • Transparent conductive film PDP optical filter, transparent conductive film for shielding electromagnetic waves, transparent conductive film for surface reflection prevention, transparent conductive film for improving color reproducibility, for damage prevention
  • Transparent conductive film, optical filter, touch panel resistive touch panel, electromagnetic induction touch panel, ultrasonic touch panel, optical touch panel, capacitive touch panel, resistive touch panel for portable information terminals, inner integrated with display Touch panels
  • solar cells amorphous silicon ( -Si) based solar cells, microcrystalline Si thin film solar cells, CIGS solar cells, dye-sensitized solar cells (DSC), etc.
  • transparent conductive materials for static electricity countermeasures for electronic components transparent conductive material light control materials for antistatics, Examples thereof include a light control mirror, a heating element (such as a surface heater and electrothermal glass), an electromagnetic wave shielding glass, and a thermophotoelectric battery.
  • Example 1 ⁇ Titanium nitride film formation> A titanium metal (purity 99.995%, 75 mm ⁇ ) manufactured by Nikko Metal Co., Ltd. was installed as a target in a DC sputtering apparatus (SPF-332H manufactured by Nidec Anelva). Further, tips of metallic niobium (different metal element material) were evenly arranged on the metal titanium. The area ratio of metal titanium and metal niobium is almost the same as the metal atomic ratio in the resulting nitride film. The number of metal niobium chips arranged was adjusted so that the area of metal niobium was 4%.
  • the substrate was set on the sample stage that also served as the anode at the position facing the target.
  • the sample stage is rotated four times per minute so that a uniform film can be formed.
  • a slide glass (76 mm ⁇ 26 mm ⁇ 1 mm) was used as the substrate.
  • the inside of the chamber of the sputtering apparatus was decompressed to 5 ⁇ 10 ⁇ 5 Pa or less with a vacuum pump, and Ar gas was first introduced to 0.9 Pa. Next, nitrogen gas was introduced so that the total pressure was about 1 Pa. Subsequently, sputtering was performed for 140 seconds at an output of 0.5 kW without heating the substrate.
  • a titanium nitride film containing Nb was obtained on the substrate.
  • the nitride film was transparent dark brown and had no color unevenness.
  • the film thickness was 10 nm.
  • the niobium element content in the nitride film was 4 atomic%.
  • the substrate on which the nitride film was formed was stored in ethanol.
  • the content of niobium element or tantalum element in the nitride film was quantified by EDS in JSM-7000F manufactured by JEOL Ltd.
  • the thickness of the nitride film was determined by Dektak 8 manufactured by ULVAC.
  • the transmittance of the transparent conductive material was measured in the wavelength range of 340 to 1100 nm using UV-3100S manufactured by Shimadzu Corporation.
  • the resistivity of the transparent conductive film was measured by a 4-probe method using Loresta IP manufactured by Mitsubishi Yuka Kabushiki Kaisha.
  • Example 1 Titanium nitride anodized on the substrate in the same manner as in Example 1 except that only metallic titanium was used as a target (indicated in the table as Nb content or Ta content 0 atomic%). Film was obtained. Transparency and conductivity were measured by the same method as in Example 1. The results are shown in Table 1 and FIG.
  • Example 2 A transparent conductive film and a transparent conductive material were obtained in the same manner as in Example 1 except that a metal tantalum chip was used instead of the metal niobium chip. Transparency and conductivity were measured by the same method as in Example 1. The results are shown in Table 2 and FIG. The obtained nitride film was transparent dark brown and had no color unevenness. The film thickness was 20 nm.
  • Example 3 A transparent conductive film and a transparent conductive material were obtained in the same manner as in Example 1 except that the sputtering time was changed from 140 seconds to 280 seconds and the anodic oxidation voltage was changed from 25 V to 50 V. Transparency and conductivity were measured by the same method as in Example 1. The results are shown in Table 3 and FIG. The obtained nitride film was a transparent dark brown color with no color unevenness.
  • the thickness of the nitride film or the transparent conductive film can be adjusted by changing the sputtering conditions and the anodic oxidation conditions, and the obtained transparent conductive film has a thick film. It can also be seen that the transmittance is high and the resistivity is low.
  • Example 4 A transparent conductive film and a transparent conductive material were obtained in the same manner as in Example 2 except that the sputtering time was changed from 140 seconds to 280 seconds and the anodic oxidation voltage was changed from 25 V to 50 V. Transparency and conductivity were measured by the same method as in Example 1. The results are shown in Table 4 and FIG. The obtained nitride film was a transparent dark brown color with no color unevenness.
  • the thickness of the nitride film or the transparent conductive film can be adjusted by changing the sputtering conditions and the anodic oxidation conditions, and the obtained transparent conductive film has high transmittance and It can be seen that the resistivity is low.
  • Example 5 Metal niobium (purity 99.99%, 75 mm ⁇ ) manufactured by Furuuchi Metal Co., Ltd. was used as a target, and tips of metal tungsten (dissimilar metal element material) were evenly arranged on the metal niobium. The number of metal tungsten chips arranged was adjusted so that the area of metal tungsten was 4%.
  • a niobium nitride film containing 20 nm thick W on the substrate was obtained in the same manner as in Example 1 except that sputtering was performed at an output of 0.5 kW for 50 seconds using the above target. The nitride film was transparent dark brown and had no color unevenness. Further, a niobium nitride film containing W was anodized by the same method as in Example 1 to obtain a transparent conductive film. Transparency and conductivity were measured by the same method as in Example 1.
  • Example 2 A niobium nitride film anodized on the substrate was obtained in the same manner as in Example 5, except that only metallic niobium was used as a target (indicated in the table as W content 0 atomic%). It was. Transparency and conductivity were measured by the same method as in Example 1. The results are shown in Table 5 and FIG.
  • a transparent conductive film is formed in the same manner as described above. can get. Further, even when anodizing a tantalum nitride film containing Mo or W as a different metal element, a transparent conductive film can be obtained in the same manner as described above.
  • the transparent conductive film and transparent conductive material of the present invention can be applied to applications such as a transparent electrode, a heating element, and an electromagnetic shielding film.
  • Substrate 2 Nitride film 3: Transparent conductive film 10: Transparent conductive material.

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Abstract

La présente invention concerne un matériau conducteur transparent, obtenu en formant un film de nitrure sur une base et en anodisant tout ou partie du film de nitrure à une température inférieure ou égale à 0 °C. Ledit film de nitrure est composé de nitrure de titane, contenant au moins un élément métallique différent choisi à partir du groupe constitué de Zr, Hf, Nb, Ta, Mo, et W ; de nitrure de niobium, contenant au moins un élément métallique différent choisi à partir du groupe constitué de Mo et de W ; et/ou de nitrure de tantale contenant au moins un élément métallique différent choisi à partir du groupe constitué de Mo et de W. Une électrode transparente, un dispositif électronique, un écran plat, un écran tactile ou une pile solaire sont obtenus au moyen du matériau conducteur transparent.
PCT/JP2010/002730 2009-04-15 2010-04-15 Procédé de production de matériau conducteur transparent Ceased WO2010119687A1 (fr)

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* Cited by examiner, † Cited by third party
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US9659681B2 (en) 2013-11-01 2017-05-23 Samsung Electronics Co., Ltd. Transparent conductive thin film
US9892815B2 (en) 2015-09-25 2018-02-13 Samsung Electronics Co., Ltd. Electrical conductors, electrically conductive structures, and electronic devices including the same
US10099938B2 (en) 2013-12-12 2018-10-16 Samsung Electronics Co., Ltd. Electrically conductive thin films
US10438715B2 (en) 2014-11-12 2019-10-08 Samsung Electronics Co., Ltd. Nanostructure, method of preparing the same, and panel units comprising the nanostructure
US10575370B2 (en) 2015-09-25 2020-02-25 Samsung Electronics Co., Ltd. Electrical conductors, electrically conductive structures, and electronic devices including the same
US11248304B2 (en) * 2017-08-09 2022-02-15 Mitsubishi Chemical Corporation Transparent electrode for oxygen production, method for producing same, tandem water decomposition reaction electrode provided with same, and oxygen production device using same
US11422658B2 (en) 2014-07-18 2022-08-23 Samsung Electronics Co., Ltd. Electrode structure and touch detecting sensor using the same

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* Cited by examiner, † Cited by third party
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KR102181436B1 (ko) 2013-11-29 2020-11-23 삼성전자주식회사 투명 전도성 박막

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02245328A (ja) * 1989-01-27 1990-10-01 Ciba Geigy Ag 複合構造体
JPH06310649A (ja) * 1993-04-21 1994-11-04 Shinko Electric Ind Co Ltd リードフレーム及びこれを用いた半導体装置並びにリードフレームの製造方法
JPH10112337A (ja) * 1996-08-09 1998-04-28 Nikon Corp 湿式太陽電池
JP2000340990A (ja) * 1999-05-28 2000-12-08 Bridgestone Corp 電磁波シールド性光透過窓材及びパネル貼合材
JP2005072367A (ja) * 2003-08-26 2005-03-17 Nippon Oil Corp 光電変換素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03101005A (ja) * 1989-09-13 1991-04-25 Furukawa Electric Co Ltd:The 架空送電線
JP4571741B2 (ja) * 2000-10-31 2010-10-27 株式会社フルヤ金属 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法及び電子光学部品
JP2009301823A (ja) * 2008-06-12 2009-12-24 Nippon Shokubai Co Ltd 電解質材料および電解質

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02245328A (ja) * 1989-01-27 1990-10-01 Ciba Geigy Ag 複合構造体
JPH06310649A (ja) * 1993-04-21 1994-11-04 Shinko Electric Ind Co Ltd リードフレーム及びこれを用いた半導体装置並びにリードフレームの製造方法
JPH10112337A (ja) * 1996-08-09 1998-04-28 Nikon Corp 湿式太陽電池
JP2000340990A (ja) * 1999-05-28 2000-12-08 Bridgestone Corp 電磁波シールド性光透過窓材及びパネル貼合材
JP2005072367A (ja) * 2003-08-26 2005-03-17 Nippon Oil Corp 光電変換素子

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9659681B2 (en) 2013-11-01 2017-05-23 Samsung Electronics Co., Ltd. Transparent conductive thin film
US10099938B2 (en) 2013-12-12 2018-10-16 Samsung Electronics Co., Ltd. Electrically conductive thin films
US11422658B2 (en) 2014-07-18 2022-08-23 Samsung Electronics Co., Ltd. Electrode structure and touch detecting sensor using the same
US10438715B2 (en) 2014-11-12 2019-10-08 Samsung Electronics Co., Ltd. Nanostructure, method of preparing the same, and panel units comprising the nanostructure
US9892815B2 (en) 2015-09-25 2018-02-13 Samsung Electronics Co., Ltd. Electrical conductors, electrically conductive structures, and electronic devices including the same
US10575370B2 (en) 2015-09-25 2020-02-25 Samsung Electronics Co., Ltd. Electrical conductors, electrically conductive structures, and electronic devices including the same
US11248304B2 (en) * 2017-08-09 2022-02-15 Mitsubishi Chemical Corporation Transparent electrode for oxygen production, method for producing same, tandem water decomposition reaction electrode provided with same, and oxygen production device using same
US12344945B2 (en) 2017-08-09 2025-07-01 Mitsubishi Chemical Corporation Transparent electrode for oxygen production, method for producing same, tandem water decomposition reaction electrode provided with same, and oxygen production device using same

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