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WO2010113312A1 - Dispositif d'affichage - Google Patents

Dispositif d'affichage Download PDF

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Publication number
WO2010113312A1
WO2010113312A1 PCT/JP2009/056897 JP2009056897W WO2010113312A1 WO 2010113312 A1 WO2010113312 A1 WO 2010113312A1 JP 2009056897 W JP2009056897 W JP 2009056897W WO 2010113312 A1 WO2010113312 A1 WO 2010113312A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
layer
display device
relaxation layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2009/056897
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English (en)
Japanese (ja)
Inventor
畠山拓也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Priority to PCT/JP2009/056897 priority Critical patent/WO2010113312A1/fr
Publication of WO2010113312A1 publication Critical patent/WO2010113312A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8794—Arrangements for heating and cooling

Definitions

  • the present invention relates to a display device used for an organic EL display or the like.
  • the structure of a display device used in various fields ranging from a small mobile phone to a large television exceeding 100 inches has an anode, an organic functional layer, and a cathode sequentially formed on a substrate.
  • a lead electrode connected to the end of the electrode is formed.
  • an oxide film is formed on the extraction electrode by plasma treatment, UV treatment, wet treatment, etc. performed before forming the organic functional layer, etc. This oxide film raises the problem that the contact resistance of the electrode increases and the drive voltage becomes high, and (2) the problem that the thermal energy generated by the leakage damages the display device.
  • Patent Document 1 it is effective for removing an oxide film that causes an increase in contact resistance.
  • the organic functional layer is formed after the removal by laser, particles produced by the oxide film removing process are used. Oxidation and re-oxidation occur in the cleaning process after removal.
  • a relaxation layer is used around the electrode to prevent thermal history. However, when thermal energy is generated due to leakage, there is no relaxation layer directly below or directly above the electrode, so that the display device has The problem of damaging it remained.
  • the present invention has been made in view of such a problem, and reduces the thermal energy when recovering the contact resistance of the electrode, thermal energy generated by leakage, and damage to the device, thereby providing a highly reliable display.
  • the main challenge is to provide devices.
  • a first electrode, an organic functional layer, and a second electrode are formed in this order on a substrate, and an end portion of the second electrode
  • the second electrode and the second electrode are covered under the third electrode so as to cover a portion where the second electrode and the third electrode are connected.
  • a relaxation layer is partially formed on at least one of the top or the second electrode and the second electrode so as to cover a portion where the first electrode and the second electrode intersect with each other. It is characterized by.
  • FIG. 1 is a schematic cross-sectional view showing a display device.
  • a first electrode 2, an organic functional layer 3, and a second electrode 5 are formed on a substrate 1 in this order, and an end portion of the second electrode 5 is formed.
  • the third electrode 6 connected to is formed on the substrate.
  • the part where the second electrode and the third electrode are connected is covered under the third electrode, above the second electrode, and the part where the first electrode and the second electrode intersect.
  • a relaxing layer is formed below the first electrode and above the second electrode.
  • a substrate conventionally used as a substrate of a display device can be used, and is not particularly limited.
  • the transparent substrate itself may be used, or a color conversion filter having a color modulation unit provided on the transparent substrate may be used.
  • it may be a flexible film formed from polyolefin, acrylic resin (including polymethyl methacrylate), polyester resin (including polyethylene terephthalate), polycarbonate resin, polyimide resin, or the like.
  • positioned may be sufficient.
  • a substrate passivation layer SiO x , SiN x , SiN x O y , which bears a part of the function of blocking oxygen and / or moisture between the substrate and the first electrode to be described next
  • Insulating inorganic oxides such as AlO x , TiO x , TaO x , and ZnO x , inorganic nitrides, inorganic oxynitrides, and the like may be used.
  • the thickness of the substrate 1 is not particularly limited, but may be 100 ⁇ m to 2000 ⁇ m.
  • the first electrode 2 is formed on the substrate 1, but it may be formed on the transparent substrate itself, or may be formed on the transparent substrate / substrate passivation layer.
  • the substrate is composed of a plurality of partial electrodes.
  • Examples of the method for forming the first electrode 2 include photolithography patterning, sputtering, and vacuum deposition.
  • a conductive metal oxide such as SnO 2 , In 2 O 3 , ITO, indium / zinc oxide (IZO), aluminum-doped zinc oxide (ZnO: Al) is deposited on the substrate 1 by sputtering. Is formed.
  • the thickness of the first electrode 2 is not particularly limited, but may be 10 nm to 1000 nm.
  • Each of the plurality of partial electrodes constituting the first electrode 2 can have, for example, a stripe shape extending in the first direction. Then, passive matrix driving can be performed by further forming second electrodes 5 to be described later as a plurality of striped electrodes extending in a second direction intersecting (preferably orthogonally intersecting) the first direction. It can be configured as follows.
  • Organic functional layer 3 (Organic functional layer 3) The organic functional layer 3 is formed between the first electrode 2 and the second electrode 5.
  • the organic functional layer 3 includes at least an organic light emitting layer, and includes a hole transport layer, a hole injection layer, an electron transport layer, and / or an electron injection layer as necessary. Each of these layers is formed to have a film thickness sufficient to realize desired characteristics in each layer. For example, what consists of the following layer structures is employ
  • Organic light emitting layer (2) Hole injection layer / organic light emitting layer (3) Organic light emitting layer / electron injection layer (4) Hole injection layer / organic light emitting layer / electron injection layer (5) Hole transport layer / Organic light emitting layer / electron injection layer (6) hole transport layer / organic light emitting layer / electron transport layer (7) hole injection layer / hole transport layer / organic light emitting layer / electron injection layer (8) hole injection layer / Hole transport layer / organic light emitting layer / electron transport layer (9) hole injection layer / hole transport layer / organic light emitting layer / electron transport layer / electron injection layer (in the above configuration, the electrode functioning as the anode is on the left side) Connected and the electrode functioning as the cathode is connected to the right side) Any known material can be used as the material of the organic light emitting layer.
  • a condensed aromatic ring compound for example, a condensed aromatic ring compound, a ring assembly compound, a metal complex (such as an aluminum complex such as [tris- (8-hydroxyquinoline) aluminum] (Alq 3 )), Styrylbenzene compounds [4,4'-bis (diphenylvinyl) biphenyl (DPVBi), etc.], porphyrin compounds, benzothiazole, benzimidazole, benzoxazole, and other fluorescent brighteners, aromatic dimethylidines Materials such as compounds are preferably used. Or you may form the organic light emitting layer which emits the light of a various wavelength range by adding a dopant to a host compound.
  • a metal complex such as an aluminum complex such as [tris- (8-hydroxyquinoline) aluminum] (Alq 3 )
  • Styrylbenzene compounds [4,4'-bis (diphenylvinyl) biphenyl (DPVBi), etc.]
  • porphyrin compounds such as compounds
  • a distyrylarylene compound for example, IDE-120 manufactured by Idemitsu Kosan Co., Ltd.
  • TPD N, N′-diphenylbiphenylamine
  • Alq 3 or the like can be used as dopants.
  • dopants perylene (blue violet), coumarin 6 (blue), quinacridone compounds (blue green to green), rubrene (yellow), 4-dicyanomethylene-2- (p-dimethylaminostyryl) -6-methyl- 4H-pyran (DCM, red), platinum octaethylporphyrin complex (PtOEP, red), or the like can be used.
  • phthalocyanines including Pc, CuPc, etc.
  • indanthrene compounds can be used as the material for the hole injection layer.
  • the hole transport layer can be formed using a material having a triarylamine partial structure, a carbazole partial structure, or an oxadiazole partial structure.
  • the material that can be used is preferably TPD, N, N′-bis (naphthalen-1-yl) -N, N′-bis (phenyl) benzidine ( ⁇ -NPD), 1,3,5-tris ⁇ 4- [methylphenyl (phenyl) amino] phenyl ⁇ benzene (MTDAPB, o-, m-, p-), 4,4 ', 4 "-tris [N-3-methylphenyl-N-phenylamino] triphenyl Amine (m-MTDATA) and the like.
  • Materials for the electron transport layer include aluminum complexes such as Alq 3 ; 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxathiazole (PBD), 1, Oxadiazole derivatives such as 3,5-tris [5- (4-tert-butylphenyl) -1,3,4-oxathiazol-2-yl] benzene (TPOB); triazole (TAZ) and other triazole derivatives; Use of a triazine derivative having the basic skeleton of the structural formula (I) shown below; phenylquinoxalines; thiophene derivatives such as 5,5′-bis (dimesitylboryl) -2,2′-bithiophene (BMB-2T) Can do.
  • an aluminum complex such as Alq 3 or an aluminum quinolinol complex doped with an alkali metal or an alkaline earth metal can be used.
  • each layer constituting the organic functional layer 3 is formed by using any means known in the art such as a vacuum deposition method such as a spin coating method, a spray method, a wet method such as an inkjet method, or the like. be able to.
  • a vacuum deposition method such as a spin coating method, a spray method, a wet method such as an inkjet method, or the like.
  • the insulating film 4 is provided arbitrarily, and is provided between the first electrode 2 and the second electrode 5 and applied to a portion where the light emitting element is not formed (non-light emitting element portion), and a portion where the light emitting element is formed (light emitting) A pattern is formed on the entire substrate so that the element portion or the pixel portion) is an opening.
  • the thickness of the insulating film 4 is not particularly limited, but is preferably 0.1 ⁇ m to 5 ⁇ m, more preferably 0.5 ⁇ m to 3 ⁇ m, from the viewpoint of preventing dielectric breakdown between the counter electrodes and leakage current.
  • an organic EL layer and a second electrode are further formed on this film, it is possible to energize only the patterned openings, and light emission can be obtained only in those portions.
  • the material of the insulating film 4 includes inorganic oxides such as SiO x , SiN x , SiN x O y , AlO x , TiO x , TaO x , ZnO x and the like, inorganic nitrides and inorganic oxynitrides, and organic substances Includes a polymer material such as a resist material and polyimide.
  • the formation method of the insulating film 4 is known in the art such as vapor deposition (resistance heating or electron beam heating), sputtering, ion plating, laser ablation in the case of inorganic materials, and spin coating method, casting method, etc. in the case of organic materials. It can be formed using any means.
  • vapor deposition resistance heating or electron beam heating
  • sputtering ion plating
  • laser ablation in the case of inorganic materials
  • spin coating method casting method, etc. in the case of organic materials. It can be formed using any means.
  • any means known in the art such as photo etching, dry etching, lift-off method can be used.
  • the second electrode 5 is composed of a plurality of partial electrodes, and is preferably formed using a highly reflective metal, amorphous alloy, or microcrystalline alloy.
  • High reflectivity metals include Al, Ag, Mo, W, Ni, Cr, and the like.
  • High reflectivity amorphous alloys include NiP, NiB, CrP, CrB, and the like.
  • the highly reflective microcrystalline alloy includes NiAl and the like.
  • the formation method of the second electrode 5 may include any means known in the art such as vapor deposition (resistance heating or electron beam heating), sputtering, ion plating, laser ablation, etc., depending on the material used. it can.
  • the second electrode 5 made up of a plurality of partial electrodes may be formed using a mask that gives a desired shape, or the second electrode 5 made up of a plurality of partial electrodes using a separating partition having a reverse tapered cross-sectional shape.
  • the electrode 5 may be formed.
  • the thickness of the second electrode 5 is not particularly limited, but may be 10 nm to 1000 nm.
  • Each of the plurality of partial electrodes constituting the second electrode 5 may have a stripe shape extending in the second direction, for example.
  • the first direction related to the first electrode 2 and the above-described second direction are preferably crossed, more preferably orthogonal.
  • the third electrode 6 is connected to the end of the second electrode 5 and serves as a connection terminal with an external drive circuit.
  • the material of the third electrode 6 is not particularly limited, but a material having low electrical resistivity and excellent productivity and stability is preferable, and a simple substance selected from the group consisting of aluminum, molybdenum, nickel, tungsten, or chromium, or those An alloy containing
  • the third electrode 6 can be formed by vapor deposition or sputtering.
  • the thickness of the third electrode 6 is not particularly limited, but is preferably 100 nm to 10 ⁇ m, more preferably 200 nm to 1 ⁇ m from the viewpoint of electrical contact.
  • examples of a method for reducing the contact resistance between the second electrode and the third electrode include laser irradiation with a laser beam, voltage application, and the like.
  • the laser beam it is preferable to use an excimer laser capable of finely processing a nanoscale metal thin film. Using these methods, by applying thermal energy to the second electrode and the third electrode, the second electrode and the third electrode are changed in shape, and the contact resistance is lowered.
  • the relaxation layer formed below the third electrode 6 is the first relaxation layer 11
  • the relaxation layer formed above the second electrode 5 is the second relaxation layer 12
  • the first The relaxation layer formed under the electrode 2 will be described as a third relaxation layer 13
  • the relaxation layer formed over the second electrode 5 will be described as a fourth relaxation layer 14.
  • the second relaxation layer is characterized in that it is partially formed.
  • the first relaxing layer 11 is formed under the third electrode 6, but the first relaxing layer 11 is formed only (partially) at a portion where the second electrode 5 and the third electrode 6 are connected. Is preferred.
  • the thermal conductivity of the first relaxation layer 11 is not particularly limited, but may be 1/10 or less of the thermal conductivity of each of the first, second, and third electrodes. Specifically, if the thermal conductivity of the first, second, and third electrodes is about 100, the thermal conductivity of the first relaxing layer 11 is preferably 0.1 to 10. As a result, heat can be diffused through the electrodes without transmitting thermal damage from the top to the bottom in the drawing.
  • the material of the first relaxing layer 11 is not particularly limited, but may be a resin material.
  • it may be a polyimide resin, an acrylic resin, a fluorene resin, or a novolac resin.
  • the thickness of the first relaxing layer 11 is not particularly limited, but may be 10 nm to 5000 nm. If the thickness is too thin, even if the thermal conductivity is low as described above, thermal damage is transmitted to each layer, and thus the above-described thickness is preferable.
  • Examples of the method of forming the first relaxing layer 11 include a photolithographic patterning method, an ink jet method, a CVD method, and a vapor deposition method.
  • the thermal conductivity, material, and thickness of the second relaxation layer 12 are the same as those of the first relaxation layer.
  • the second relaxing layer 12 is formed on the second electrode 5, but the second relaxing layer 12 is not formed on the entire surface of the second electrode 5, but the second electrode 5 and the third electrode 6 are formed. It is preferable that it is formed only (partially) at the part to be connected.
  • Examples of the method of forming the second relaxing layer 12 include an ink jet method, a vapor deposition method, and a CVD method.
  • the first relaxation layer under the third electrode 6 and the second relaxation layer over the second electrode 5 so as to cover the portion where the second electrode 5 and the third electrode 6 are connected Is partially formed, it is possible to reduce damage to the display device due to thermal energy even when the surface of the third electrode with increased contact resistance is irradiated with laser to reduce the contact resistance.
  • the third relaxing layer 13 is formed below the first electrode 2, but the third relaxing layer 13 is not formed on the entire surface of the substrate 1, but the first electrode 2 and the second electrode 5 intersect each other. It is preferable that it is formed only (partially). Specifically, it is preferably larger than the width of the first electrode 2. Specifically, it is preferably about 1 ⁇ m to 100 ⁇ m larger than the width of the first electrode 2.
  • the thermal conductivity of the third relaxation layer 13 is not particularly limited, but may be 1/10 or less of the thermal conductivity of the first, second, and third electrodes. Specifically, assuming that the thermal conductivity of the first, second, and third electrodes is 100, the thermal conductivity of the third relaxing layer 13 is preferably 0.1 to 10.
  • the material of the third relaxation layer 13 is not particularly limited, but may be a resin material. In particular, it may be a polyimide resin, an acrylic resin, a fluorene resin, or a novolac resin.
  • the thickness of the third relaxing layer 13 is not particularly limited, but may be 10 nm to 5000 nm.
  • Examples of the method of forming the third relaxation layer 13 include a photolithographic patterning method, an ink jet method, a CVD method, and a vapor deposition method.
  • the third relaxation layer may have an average transmittance of 80% or more in the visible light region.
  • the thermal conductivity, material, and thickness of the fourth relaxation layer 14 are the same as those of the third relaxation layer.
  • the fourth relaxation layer 14 is formed on the second electrode 5, but the fourth relaxation layer 14 is not formed on the entire surface of the second electrode 5, but the first electrode 2, the second electrode 5, Is preferably formed only (partially) at the intersection.
  • the width is preferably larger than the width of the organic functional layer 3 (light emitting portion). Specifically, it is preferably about 1 ⁇ m to 100 ⁇ m larger than the width of the organic functional layer 3 (light emitting portion).
  • Examples of the method of forming the fourth relaxation layer 14 include an inkjet method, a vapor deposition method, and a CVD method.
  • the fourth relaxation layer 14 may have an average transmittance of 80% or more in the visible light region.
  • the relaxation layer has a first relaxation layer under the third electrode, a second relaxation layer above the second electrode, and a first electrode so as to cover a portion where the second electrode and the third electrode are connected.
  • the first electrode is formed only on the second relaxing layer above the second electrode and on the second electrode so as to cover the portion where the second electrode and the third electrode are connected, Even if the third relaxation layer is formed under the first electrode and the fourth relaxation layer is formed on the second electrode so as to cover the portion where the second electrode intersects, the effect is obtained. .
  • the present invention is described in the passive matrix method, but the same effect can be obtained in the active matrix method.

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Abstract

La présente invention se rapporte à un dispositif d'affichage très fiable. Dans ce dispositif d'affichage, l'énergie thermique apparaissant durant la récupération de la résistance de contact d'une électrode, l'énergie thermique générée en raison d'une fuite et le risque d'endommagement du dispositif sont réduits. De façon plus spécifique, la présente invention se rapporte à un dispositif d'affichage dans lequel une première électrode, une couche fonctionnelle organique et une deuxième électrode sont formées dans cet ordre sur un substrat. Selon l'invention, une troisième électrode qui est raccordée à une extrémité de la deuxième électrode est également formée sur le substrat. Le dispositif d'affichage est caractérisé en ce qu'une couche de relaxation est partiellement formée à au moins une des positions suivantes : (i) en dessous de la troisième électrode et au-dessus de la deuxième électrode, de telle sorte que la partie au niveau de laquelle la deuxième électrode et la troisième électrode sont raccordées l'une à l'autre est recouverte; ou (ii) en dessous de la première électrode et au-dessus de la deuxième électrode, de telle sorte que la partie au niveau de laquelle la première électrode et la deuxième électrode se coupent est recouverte.
PCT/JP2009/056897 2009-04-02 2009-04-02 Dispositif d'affichage Ceased WO2010113312A1 (fr)

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PCT/JP2009/056897 WO2010113312A1 (fr) 2009-04-02 2009-04-02 Dispositif d'affichage

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WO2010113312A1 true WO2010113312A1 (fr) 2010-10-07

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013027262A1 (fr) * 2011-08-23 2013-02-28 パイオニア株式会社 Plaque électroluminescente organique, et procédé de production associé
JP2017520032A (ja) * 2014-04-17 2017-07-20 アビニシオ テクノロジー エルエルシー 処理環境の統合監視および制御
WO2018062272A1 (fr) * 2016-09-28 2018-04-05 パイオニア株式会社 Dispositif électroluminescent

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JP2003084684A (ja) * 2001-09-13 2003-03-19 Sony Corp ディスプレイ装置及びディスプレイ装置の製造方法、並びに電子機器
JP2003086362A (ja) * 2001-09-12 2003-03-20 Sony Corp 表示装置およびその製造方法、ならびに電子機器
JP2004265837A (ja) * 2003-03-04 2004-09-24 Seiko Epson Corp 表示パネル及びその表示パネルを備えた電子機器並びに表示パネル及びその表示パネルを備えた電子機器の製造方法
JP2006236744A (ja) * 2005-02-24 2006-09-07 Seiko Epson Corp 有機ｅｌ装置、有機ｅｌ装置の製造方法および電子機器
JP2008159321A (ja) * 2006-12-21 2008-07-10 Fuji Electric Holdings Co Ltd 有機ｅｌディスプレイパネル及びその製造方法
WO2008099700A1 (fr) * 2007-02-16 2008-08-21 Sharp Kabushiki Kaisha Transistor à double grille, son procédé de fabrication, et substrat de matrice actif comprenant un transistor à double grille
JP2008297499A (ja) * 2007-06-01 2008-12-11 Polymatech Co Ltd エポキシ樹脂成形体

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086362A (ja) * 2001-09-12 2003-03-20 Sony Corp 表示装置およびその製造方法、ならびに電子機器
JP2003084684A (ja) * 2001-09-13 2003-03-19 Sony Corp ディスプレイ装置及びディスプレイ装置の製造方法、並びに電子機器
JP2004265837A (ja) * 2003-03-04 2004-09-24 Seiko Epson Corp 表示パネル及びその表示パネルを備えた電子機器並びに表示パネル及びその表示パネルを備えた電子機器の製造方法
JP2006236744A (ja) * 2005-02-24 2006-09-07 Seiko Epson Corp 有機ｅｌ装置、有機ｅｌ装置の製造方法および電子機器
JP2008159321A (ja) * 2006-12-21 2008-07-10 Fuji Electric Holdings Co Ltd 有機ｅｌディスプレイパネル及びその製造方法
WO2008099700A1 (fr) * 2007-02-16 2008-08-21 Sharp Kabushiki Kaisha Transistor à double grille, son procédé de fabrication, et substrat de matrice actif comprenant un transistor à double grille
JP2008297499A (ja) * 2007-06-01 2008-12-11 Polymatech Co Ltd エポキシ樹脂成形体

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013027262A1 (fr) * 2011-08-23 2013-02-28 パイオニア株式会社 Plaque électroluminescente organique, et procédé de production associé
JP2017520032A (ja) * 2014-04-17 2017-07-20 アビニシオ テクノロジー エルエルシー 処理環境の統合監視および制御
US11188381B2 (en) 2014-04-17 2021-11-30 Ab Initio Technology Llc Integrated monitoring and control of processing environment
WO2018062272A1 (fr) * 2016-09-28 2018-04-05 パイオニア株式会社 Dispositif électroluminescent

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