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WO2010044217A1 - Procédé de découpe d’un substrat mère en verre pour écran et d’un substrat de corps fragile, et procédé de fabrication de l’écran - Google Patents

Procédé de découpe d’un substrat mère en verre pour écran et d’un substrat de corps fragile, et procédé de fabrication de l’écran Download PDF

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Publication number
WO2010044217A1
WO2010044217A1 PCT/JP2009/005192 JP2009005192W WO2010044217A1 WO 2010044217 A1 WO2010044217 A1 WO 2010044217A1 JP 2009005192 W JP2009005192 W JP 2009005192W WO 2010044217 A1 WO2010044217 A1 WO 2010044217A1
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WO
WIPO (PCT)
Prior art keywords
substrate
glass substrate
region
laser
brittle material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2009/005192
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English (en)
Japanese (ja)
Inventor
亀井政行
中山晶之
社本英泰
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LINKSTAR JAPAN CO Ltd
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LINKSTAR JAPAN CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008268706A external-priority patent/JP2010095414A/ja
Priority claimed from JP2008321300A external-priority patent/JP5280825B2/ja
Application filed by LINKSTAR JAPAN CO Ltd filed Critical LINKSTAR JAPAN CO Ltd
Publication of WO2010044217A1 publication Critical patent/WO2010044217A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/07—Cutting armoured, multi-layered, coated or laminated, glass products
    • C03B33/076—Laminated glass comprising interlayers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Definitions

  • the present invention relates to processing technology for brittle material substrates such as glass substrates and semiconductor substrates.
  • FPDs flat panel displays
  • LCDs liquid crystal displays
  • plasma displays organic EL displays
  • the size of FPD ranges from several tens of inches used for large LCD TVs to several inches used for mobile phone terminals, and the thickness of FPDs varies from several mm used for large LCD TVs. Wide range of several hundred ⁇ m used for mobile phone terminals.
  • a laser beam is irradiated to a point on the planned processing line while being moved along the planned processing line on the glass substrate, and then heated locally, and then cooled by spraying a cooling medium in the vicinity of the heating region.
  • thermal stress is generated in the direction of pulling the glass substrate perpendicular to the planned processing line, and a scribe line along the planned processing line grows on the glass substrate.
  • mechanical stress is applied to the glass substrate by a breaker device as necessary, and the glass substrate is cut along the scribe line.
  • the scribe line is penetrated to the deep part in the thickness direction of the glass substrate, and the full cut that cleaves the glass substrate without breaking by the breaker device (Also called full body cut).
  • a full cut using a laser is very useful from the viewpoint of mass productivity because it requires no post-processing by a breaker device and can cleave the glass substrate in a single step.
  • the mother glass substrate is composed of two glass substrates bonded together by a sealing material. In the manufacturing process of the liquid crystal panel, it is necessary to cut the four sides of each cell substrate from the mother glass substrate having a plurality of cell substrates sealed on the four sides to cut out the individual sides.
  • scribe lines are formed in the vertical direction and the horizontal direction with respect to the front surface side substrate (first substrate), and then the mother glass substrate is reversed to the back side substrate (second substrate). Then, scribe lines are formed in the vertical direction and the horizontal direction (scribing step). Subsequently, the second substrate is cleaved along the scribe line, the mother glass substrate is inverted again, and the first substrate is cleaved along the scribe line (cutting step).
  • the scribing process, the cutting process, and the number of inversions of the mother glass substrate accompanying them are small. This requirement is not limited to the cutting of a mother glass substrate for a flat display, but also applies to the cutting of a general brittle material substrate.
  • the present invention has been made in view of the related problems, and one of its purposes is to provide a technology for processing a brittle material substrate with a reduced number of steps.
  • One embodiment of the present invention relates to a method for cutting a mother glass substrate of a display panel including a first glass substrate and a second glass substrate bonded together by a sealing material that partitions a plurality of cells arranged in a matrix.
  • This method includes the following steps. 1. A processing line is arranged in the gap between the sealing materials of adjacent cells, and a laser is irradiated on the first glass substrate along the processing line to form a scribe line on the first glass substrate. 2. Along the processing line, the second glass substrate is irradiated with laser, the vicinity of the region irradiated with the laser is cooled, and the second glass substrate is cleaved. 3. The stress generated when the second glass substrate is cleaved is transmitted to the first glass substrate through the sealing material, so that the first glass substrate is cleaved along the scribe line substantially simultaneously with the cleaving of the second glass substrate. To do.
  • two laminated glasses can be cut by one scribing process and one break (breaking) process, the processing process can be simplified, and the yield and processing quality can be improved.
  • the depth of the scribe line formed on the first glass substrate may be in the range of 1/3 to 1/2 of the thickness of the first glass substrate. By setting the depth of the scribe line within this range, the first glass substrate can be suitably cleaved by the stress from the second glass substrate.
  • the number of steps can be reduced.
  • FIGS. 1A and 1B are diagrams showing a configuration of a mother glass substrate to be cut.
  • 2A and 2B are diagrams illustrating a flow of the cutting method according to the embodiment.
  • FIGS. 3A to 3C are diagrams showing a cutting mechanism when a horizontally long laser beam LB is irradiated. It is a figure which shows the structure of the irradiation optical system for patterning a laser beam horizontally long. It is a block diagram which shows the whole structure of the laser processing apparatus which concerns on embodiment.
  • 6A and 6B are diagrams showing the configuration of the substrate table according to the embodiment.
  • FIGS. 7A and 7B are diagrams illustrating the amount of bending when the substrate table according to the embodiment is used. It is a figure which shows the structure of the board
  • FIGS. 1A and 1B are diagrams showing a configuration of a mother glass substrate to be cut. Since the structure of the mother glass substrate 1 is general, only a brief description will be given here.
  • 1A is a plan view of the mother glass substrate
  • FIG. 1B is a cross-sectional view.
  • the mother glass substrate 1 includes a plurality of cells 3 arranged in a matrix. As shown in FIG. 1B, the mother glass substrate 1 includes a first glass substrate G1 and a second glass substrate G2 bonded together by a sealing material 5.
  • the sealing material 5 defines the periphery of the cell 3, and a light emitting region surrounded by the sealing material 5 is filled with a liquid crystal material 11.
  • the planned processing lines L1 and L2 in the column direction and the row direction of the matrix are arranged, respectively.
  • the processing lines L1 and L2 are virtual.
  • the cell 3 is divided into individual sides by cutting the mother glass substrate 1 along the planned processing lines L1 and L2.
  • the above is the outline of the mother glass substrate 1 to be processed. Next, a method for cutting the mother glass substrate 1 according to the embodiment will be described.
  • FIGS. 2A and 2B are diagrams illustrating a flow of a cutting method according to the embodiment.
  • the cutting method includes a first step (FIG. 2A) and a second step (FIG. 2B) as substantial steps, and further includes a third step as an additional step thereof.
  • the first glass substrate G1 is irradiated with the laser beam LB, and the mother glass substrate 1 and the laser beam LB are relatively moved in the direction of the planned processing line L1 (L2).
  • a scribe line SL is formed on the surface of the first glass substrate G1.
  • the shape of the region 40 irradiated with the laser beam LB is desirably a vertically long shape having a major axis in the direction of the planned processing line L1 (L2).
  • FIG.2 (b) shows the figure which reversed the upper and lower sides of the mother glass substrate 1 from the state of Fig.2 (a).
  • the second glass substrate G2 is irradiated with the laser beam LB to be heated and expanded, and then the vicinity of the region 40 irradiated with the laser beam LB (cooling region 44).
  • the second glass substrate G2 is cleaved by cooling by injecting the coolant onto the second glass substrate G2.
  • the processing apparatus which can irradiate the laser beam LB from two directions of the upper surface and lower surface of the mother glass substrate 1, it is not necessary to invert the mother glass substrate 1 between a 1st process and a 2nd process.
  • the shape of the region 40 irradiated with the laser beam LB has a major axis in the direction of the planned machining line L1 (L2), but as will be described later, the planned machining line L1 (L2). ) May have a minor axis.
  • a scribe line may be formed by irradiating the second glass substrate G2 with a laser along the planned processing line.
  • the stress generated when the second glass substrate G2 is cleaved is transmitted to the first glass substrate G1 through the sealing material 5 and the liquid crystal material 11. This stress acts so as to tear the first glass substrate G1 in the direction perpendicular to the planned processing line L1 (L2). Since the scribe line SL is formed on the first glass substrate G1 in the first step, the stress is cleaved substantially simultaneously with the second glass substrate G2.
  • the depth d of the scribe line SL formed in the first step is an extremely important parameter.
  • the depth d of the scribe line SL is preferably in the range of 1/3 to 1/2 of the thickness d1 of the first glass substrate G1.
  • the depth of the scribe line SL is 0.09 mm, that is, the substrate If the thickness exceeds 1/2 of the thickness, the crack caused by the scribing itself grows, and it becomes impossible to break only the first glass substrate G1 and simultaneously cleave both glass substrates or to control the crack propagation. Caused inconvenience.
  • the depth of the scribe line SL is 0.06 mm, that is, less than 1/3 of the substrate thickness, the strength of the first glass substrate G1 is too high, so that the first glass substrate G1 is cleaved in the third step. I can't.
  • the first glass substrate G1 can be cleaved simultaneously with the second glass substrate G2 in the third step. It can. Similar findings have been obtained for other substrate thicknesses.
  • First step 1a A scribe line SL is formed in the vertical direction and the horizontal direction with respect to the first glass substrate G1.
  • Second step 2a Subsequently, the mother glass substrate 1 is inverted, and scribe lines are formed in the vertical direction and the horizontal direction with respect to the second glass substrate G2 on the back surface side.
  • Third step 3a Subsequently, the second glass substrate G2 is cleaved along the scribe line.
  • the mother glass substrate 1 can be cut by one scribing process and one cutting process. Reduction in the number of processes leads to improvement in yield and reliability, and contributes to cost reduction of the liquid crystal panel.
  • the mother glass substrate 1 when attention is paid to the number of inversions of the mother glass substrate 1, it has been once in the embodiment, whereas it has been twice in the past.
  • the mother glass substrate 1 When the mother glass substrate 1 is inverted, there is a higher possibility that defects such as cracks and chips will occur in the mother glass substrate 1 due to vibrations, etc.
  • the number of inversions is reduced in the cutting method according to the embodiment, the occurrence of defects Can be suppressed.
  • the reversing process itself of the mother glass substrate 1 can be omitted.
  • the mother glass substrate 1 (stage) can be irradiated with a laser beam from both the upper surface and the lower surface, and a cooling mechanism is provided on at least one surface side (usually above the stage).
  • the mother glass substrate 1 is arranged on the stage so that the first glass substrate G1 is on the upper side where the cooling mechanism is provided.
  • a scribe line is formed using a laser beam from the surface side (lower side) of the first glass substrate G1 of the mother glass substrate 1, and in the second step, the first glass substrate G1 is inverted. Without doing so, the second glass substrate G2 is cut using the laser beam from the surface side (upper side) of the second glass substrate G2 of the mother glass substrate 1 and the cooling mechanism.
  • the profile of the laser beam LB is substantially elliptical or rectangular with a minor axis in the direction of the planned processing line L1 (L2) and a major axis in the direction perpendicular to the planned processing line. It is desirable to be. More specifically, the ratio of the major axis to the minor axis is from 3: 2 to 5: 1.
  • FIGS. 3A to 3C are diagrams showing a cutting mechanism when a horizontally long laser beam LB is irradiated.
  • FIG. 3A shows a temperature distribution immediately after heating the laser beam LB.
  • the second glass substrate G2 is cleaved when the crack 45 grows downward in the second glass substrate G2.
  • FIG. 4 is a diagram showing the configuration of the irradiation optical system 16 for patterning the laser beam LB horizontally.
  • the irradiation optical system 16 includes a first cylindrical lens CL1 and a second cylindrical lens CL2.
  • the first cylindrical lens CL1 and the second cylindrical lens CL2 are arranged such that the cross sections having curvatures are perpendicular to each other.
  • the first cylindrical lens CL1 is an optical element that condenses the laser beam LB in a first direction (Y-axis direction) perpendicular to the propagation direction (Z-axis opposite direction). Specifically, the first cylindrical lens CL1 is a plano-convex cylindrical lens, and reduces the laser beam LB in the Y-axis direction. The curvature of the first cylindrical lens CL1 is determined according to the diameter of the original laser beam LB and the size of the laser irradiation region. As an alternative to the first cylindrical lens CL1, a concave cylindrical mirror may be used.
  • the second cylindrical lens CL2 is an optical element that diverges the laser beam LB in a second direction (X-axis direction) perpendicular to the propagation direction (Z-axis opposite direction) and the first direction (Y-axis direction). .
  • the Y axis coincides with the direction of the planned machining line L1.
  • the second cylindrical lens CL2 is a plano-concave cylindrical lens and expands the laser beam LB in the X-axis direction. Similar to the first cylindrical lens CL1, the curvature of the second cylindrical lens CL2 is also determined according to the diameter of the original laser beam LB and the size of the laser irradiation region.
  • a convex cylindrical mirror may be used as an alternative to the second cylindrical lens CL2, a convex cylindrical mirror may be used.
  • the first cylindrical lens CL1 and the second cylindrical lens CL2 are arranged so that the mother glass substrate 1 side is a plane, but may be in opposite directions, and the positions of the first cylindrical lens CL1 and the second cylindrical lens CL2 are It may be replaced.
  • the first cylindrical lens CL1 and the second cylindrical lens CL2 are mounted on a movable mounter, and can move independently in the path direction of the laser beam LB. That is, the distance between the first cylindrical lens CL1 and the mother glass substrate 1 and the distance between the second cylindrical lens CL2 and the mother glass substrate 1 can be adjusted independently. As a result, the length in the X-axis direction and the width in the Y-axis direction of the laser irradiation region 40 shown in FIG. 3A can be adjusted independently.
  • the second glass substrate G2 is cleaved using the laser beam LB shown in FIG. 2B or FIG. 4 (particularly FIG. 4), if the laser irradiation region 40 overlaps the sealing material 5, the intensity of the laser beam LB. Is too high, or when the heat resistance of the sealing material 5 is low, the sealing material 5 may be damaged.
  • the length of the laser irradiation region 40 in the direction perpendicular to the planned processing line L1 (L2) is made shorter than the interval of the sealing material 5 so that the laser irradiation region 40 It is desirable to take care not to overlap the sealant 5.
  • the cells cut by the above-described cutting method are assembled into a display device casing together with a gate driver (scan driver), a source driver (data driver), a memory, a control IC, an interface circuit, and the like to complete the display device.
  • the cutting method according to the embodiment has been described above by taking the cutting of the mother glass substrate 1 of the display device as an example.
  • the application range of the present invention is not limited to the cutting of the mother glass substrate 1, and can be applied to cutting of various laminated glasses used for other purposes.
  • it is not limited to a glass substrate, but can be applied to other brittle material substrates.
  • a method for cutting a substrate to be processed including a first brittle material substrate and a second brittle material substrate bonded together by a fixing material is provided.
  • the first brittle material substrate is irradiated with a laser along a planned processing line arranged between two fixing materials arranged apart from each other, and the first brittle material is obtained.
  • a scribe line is formed on the substrate.
  • the second brittle material substrate is irradiated with the laser along the planned processing line, and the vicinity of the region irradiated with the laser is cooled to cleave the second brittle material substrate.
  • the stress generated when the second brittle material substrate is cleaved in the second step is transmitted to the first brittle material substrate through the fixing material, so that the second brittle material substrate is cut substantially simultaneously with the cleaving of the second brittle material substrate.
  • One brittle material substrate is cleaved along the scribe line.
  • the sealing material 5 and the liquid crystal material 11 are exemplified as the fixing material.
  • These can also be understood as utilizing the structure of the mother glass substrate 1 as an original function in the cutting method according to the present invention. From another point of view, when two brittle material substrates are cut simultaneously, the adhesive material is applied to the two regions sandwiching the planned processing line, the two brittle material substrates are bonded together, and cut according to the above procedure. May be.
  • a scribe line may be formed by irradiating the second brittle material substrate with a laser along a planned processing line. In this case, the cutting of the substrate can be assisted and the processing quality can be improved.
  • the second embodiment relates to a laser processing technique for cutting a substrate such as glass, and more particularly to a substrate table for fixing and holding the substrate.
  • the second embodiment can be used separately from the first embodiment or can be combined therewith.
  • a conventional technique is used in which a scribe line is formed with a cutter such as diamond, and breaks along the scribe line. It has been.
  • This method has a problem that glass powder and glass cullet are generated at the time of cleaving.
  • a technique laser scribing that uses a laser beam instead of a cutter for forming a scribe line has been developed.
  • the laser In laser scribing, while moving along the planned cutting line on the substrate to be cut, the laser is irradiated on the planned cutting line to locally heat it, and then cooled by spraying / spraying a cooling medium near the heating area. .
  • thermal stress is generated in the direction of pulling the substrate to be cut perpendicular to the planned cutting line according to the heat distribution of the substrate to be cut, and a scribe line (crack) along the planned cutting line grows on the substrate to be cut. ⁇ Progress. Thereafter, mechanical stress is applied to the substrate to be cut by the breaker device, and the substrate is cut along the scribe line.
  • the scribe line is penetrated to a deep part in the thickness direction of the substrate to be cut, and the substrate to be cut is cut without being cut by the breaker device.
  • Full cut also called full body cut
  • Full cutting using a laser is very useful from the viewpoint of mass productivity because post-processing by a breaker device is not necessary and the substrate to be cut can be cleaved in a single process.
  • a table for setting the substrate to be cut (hereinafter simply referred to as a substrate table) is provided.
  • a substrate table one using a mechanical means such as a clamp or one using vacuum suction is known.
  • a metal material such as aluminum in which a large number of suction holes are formed on a surface that contacts a substrate to be cut is known.
  • a suction path is provided inside the table, and the substrate to be cut is sucked and fixed by connecting the suction path to a vacuum source.
  • a technique using a porous material As another technique using vacuum adsorption, a technique using a porous material has been proposed.
  • a substrate to be cut is adsorbed and fixed by being connected to a vacuum source (pump) through a suction path to a porous body that is sealed and sealed except for one surface that contacts the substrate to be cut.
  • a table made of a porous material has fine adsorption holes and is present on the table surface at a high density.
  • a fixing method using such a porous table is disclosed in Patent Document 3, for example.
  • a typical adsorption hole diameter (in particular, the diameter means a diameter) is about 0.5 mm to 1.0 mm, and the hole surface density is 0.5 mm. About 5 / cm 2 .
  • the substrate can be fixed, but the surface density of the suction holes is not sufficient, and further, the flatness of the substrate to be cut is also affected, so the adhesion at the cutting part Is unbalanced, and local mechanical vibration is generated in the vicinity of the cutting line of the substrate to be cut, so that there is a problem that the cutting accuracy is affected, for example, the cutting line is bent.
  • the technology disclosed in the second embodiment has been made in view of such a problem, and according to the second embodiment, a table capable of increasing the cutting accuracy, and a laser using the same.
  • a processing apparatus is provided.
  • FIG. 5 is a block diagram showing the overall configuration of the laser processing apparatus 100 according to the embodiment.
  • the laser processing apparatus 100 cuts (full cuts) the substrate 110, which is an object to be processed, from the start end 112 toward the end end 114 along a planned cutting line, or forms a scribe line on the surface thereof.
  • Specific examples of the substrate 110 include various glass substrates used for flat panel displays (FPD).
  • the glass substrate may be a single plate or a bonded substrate.
  • the substrate to be processed may be a brittle material substrate other than glass, or can be used for cutting a semiconductor wafer such as silicon.
  • the left direction in FIG. 5 is the X direction
  • the front direction perpendicular to the paper surface is the Y direction
  • the upward direction is the Z axis.
  • the dimensions of each member and the like shown in some drawings are appropriately expanded or reduced for easy understanding within a scope not related to the essence of the invention, and the positional relationship between each member is easy to understand. For the sake of illustration, it is modified or changed as appropriate.
  • the laser processing apparatus 100 includes a movable stage 2, a substrate table 4, an initial crack generation unit 6, a laser light source 8, a laser irradiation device 10, a cooling device 20, a temperature sensor 30, and a control unit 32.
  • the substrate 110 is fixed on the substrate table 4.
  • the substrate table 4 has a large number of suction holes perforated on the surface thereof, and the substrate table 4 is fixed by negative pressure suction (vacuum suction).
  • the substrate 110 is disposed in parallel with the XY plane.
  • the movable stage 2 moves the substrate table 4 on which the substrate 110 is fixed.
  • the substrate table 4 By moving the substrate table 4 in a scanning direction SCAN (in the direction opposite to the X axis) parallel to the planned cutting line, the substrate 110 moves relative to a laser irradiation region and a cooling region described later.
  • FIG. 5 assumes a case where the planned cutting line is formed in the X-axis direction.
  • the movable stage 2 is configured to be able to adjust the angle ⁇ around the Z-axis, thereby adjusting the direction of the planned cutting line with respect to the substrate 110.
  • the laser irradiation apparatus 10 and the temperature sensor 30 may be moved relative to the substrate 110 using the movable stage 2 as a fixed stage.
  • the laser light source 8 is appropriately selected according to the wavelength dependence of the absorption rate of the substrate 110.
  • a carbon dioxide laser (CO 2 laser) having a wavelength of 10.6 ⁇ m is preferably used. It can.
  • the glass substrate is transparent with respect to visible light, but is opaque with respect to such an infrared wavelength range, so that the energy of the laser light is efficiently absorbed and converted into heat.
  • Some scribing devices and cutting devices using lasers use lasers having wavelengths in the visible light, ultraviolet region, or near infrared region. Therefore, the processing technique according to the present embodiment using a CO 2 laser is similar to the processing technique using the near infrared or shorter wavelength than the near infrared in the heating or subsequent cooling process. It should be noted that the knowledge obtained by the processing technology according to the form is useful for such processing technology.
  • the laser light source 8 emits a laser beam LB1 having a circular beam profile.
  • the cross-sectional intensity profile of a laser beam has a Gaussian distribution, but it may be a beam whose outer periphery is cut off by an aperture or the like, or may be a beam having another intensity distribution.
  • the beam profile is usually a perfect circle, but the shape can be corrected by the irradiation optical system at the subsequent stage, so it may be an ellipse, a square, or a rectangle. Rather, it may be better to positively correct the shape of the laser beam emitted from the laser light source in order to achieve the optimum heating for full cut.
  • the laser irradiation apparatus 10 patterns the laser beam LB1 emitted from the laser light source 8, and irradiates the patterned laser beam LB2 onto the planned cutting line of the substrate 110, which is the substrate 110.
  • the laser beam LB2 irradiated to the substrate 110 has an elongated shape whose planned cutting line is in the longitudinal direction.
  • the size of the region (laser irradiation region) irradiated with the laser beam LB2 on the substrate 110 is optimized according to the material and thickness of the substrate 110. Furthermore, the size and shape may be changed in accordance with the position where the laser beam is irradiated.
  • the cooling device 20 injects the cooling medium CM to a predetermined cooling region on the planned cutting line in the vicinity of the region (laser irradiation region) irradiated with the laser on the substrate 110.
  • the cooling device 20 is configured by a nozzle that injects a mixture of gas and liquid, for example.
  • the nozzle is configured to be movable in the X-axis direction, and the distance between the cooling region and the tail end of the laser irradiation region 40 is optimal according to the material, thickness, size of the laser irradiation region, etc. It becomes.
  • the initial crack generation unit 6 is provided to form an initial crack at the start end 112 of the substrate 110 on the planned cutting line.
  • the initial crack generation unit 6 is composed of a cutter such as diamond.
  • the laser irradiation region and the cooling region are scanned along the planned cutting line with the initial crack as a starting point, and a full-cut split section grows using the initial crack as a seed. Note that, depending on the substrate 110 and processing conditions, a full cut may be possible without forming an initial crack.
  • the above is the overall configuration of the laser processing apparatus 100. Next, the characteristic substrate table 4 will be described in detail.
  • FIGS. 6A and 6B are diagrams showing the configuration of the substrate table 4 according to the embodiment.
  • FIG. 6A shows the configuration of the substrate table 4 and its surroundings.
  • a substrate 110 to be processed is mounted on the surface of the substrate table 4.
  • the laser irradiation region 40 on the planned cutting line L1 is irradiated with the laser beam, and the cooling region 44 is cooled.
  • a plurality of suction holes are formed on the surface of the substrate table 4 that contacts the substrate 110.
  • the suction holes communicate with the exhaust holes 50 and 52 through the inside of the substrate table 4.
  • the exhaust holes 50 and 52 are connected to the vacuum source 60 via suction paths 68 and 70, respectively.
  • the substrate 110 is sucked and fixed to the substrate table 4 by the vacuum pressure generated by the vacuum source 60.
  • FIG. 6B is a plan view of the substrate table 4 as viewed from above.
  • a plurality of suction holes H ⁇ b> 1 and H ⁇ b> 2 are formed on the surface of the substrate table 4.
  • the substrate table 4 is largely divided into a first region R1 and a second region R2.
  • the first region R1 has a strip shape including the planned cutting line L1
  • the second region R2 is a region at both ends sandwiching the first region R1.
  • the plurality of first adsorption holes H1 formed in the first region R1 are connected to the exhaust holes 50 in FIG. 6A, and the plurality of second adsorption holes H2 formed in the second region R2 are illustrated in FIG. 6 (a) is connected to the second exhaust hole 52.
  • the first region R1 and the second region R2 are designed so that the diameter and density of the adsorption holes H1 and H2 formed inside each satisfy at least one of the following two conditions, preferably both.
  • the average diameter ⁇ 1 of the suction holes (also referred to as first suction holes) H1 formed in the first region R1 is smaller than the average diameter ⁇ of the suction holes in all regions including the first region R1 and the second region R2. ⁇ 1 ⁇ (1)
  • the average diameter ⁇ 1 of the first suction holes H1 may be smaller than the average diameter ⁇ 2 of the suction holes (also referred to as second suction holes) H2 formed in the second region R2. This condition may be satisfied simultaneously with the above (1). ⁇ 1 ⁇ 2 (1a)
  • the average diameter ⁇ 1 of the suction holes formed in the first region is 10 ⁇ m or more and 80 ⁇ m or less
  • the average diameter ⁇ 2 of the suction holes H2 formed in the second region is 100 ⁇ m or more. 10 ⁇ m ⁇ ⁇ 1 ⁇ 80 ⁇ m (1b) ⁇ 2 ⁇ 100 ⁇ m (1c)
  • the average diameter of the suction holes H1 formed at a high density in the first region R1 is less than 10 ⁇ m, clogging occurs and the suction force tends to be insufficient, and if it exceeds 80 ⁇ m, the open end becomes brittle and lost. It is easy to induce mechanical damage, resulting in severe damage to the cutting quality.
  • the average diameter ⁇ 2 of the suction holes H2 formed in the second region R2 is less than 100 ⁇ m, machining for drilling becomes complicated.
  • the line density in the direction of the planned cutting line L1 of the suction holes H1 formed in the first region R1 is 50 / cm or more and 800 / cm or less, and the suction holes H2 formed in the second region R2
  • the linear density is 0.1 piece / cm or more and 10 piece / cm or less.
  • the reason is that if the line density in the direction of the cutting line L1 of the suction hole H1 formed in the first region R1 is less than 50 / cm, the suction force is insufficient, and if it exceeds 800 / cm, clogging is likely to occur. Because it becomes. If the linear density of the suction holes H2 formed in the second region R2 is less than 0.1 / cm, the fixing force of the glass substrate is insufficient, and if it exceeds 10 / cm, the drilling machining becomes complicated.
  • the average linear density n1 and the average diameter ⁇ 1 are 0.50 ⁇ n1 ⁇ ⁇ 1 ⁇ 0.75.
  • the substrate table 4 is preferably specifically configured as follows.
  • the first region R1 is provided to the minimum necessary to maintain high cutting quality by eliminating mechanical vibrations during cutting by providing an appropriate suction force by providing suction holes for densely fixing the substrate.
  • the second region R2 is a region for providing suction holes sparsely and fixing the cutting substrate with a minimum necessary suction force.
  • the first region R1 and the second region R2 are physically separated so that different adsorption forces can be provided, but the first region R1 and the second region R2 are physically separated, Made of different materials.
  • the two types of structures are configured to be able to contact each other without any gap or step so as not to affect the cutting quality. Since the first region R1 is easily consumed because it is irradiated with a laser, and clogging due to the cullet generated from the substrate 110 is likely to occur, it is desirable that the structure be easily replaceable with a cartridge type. If only the portion of the first region R1 can be replaced, it is not necessary to replace the entire substrate table 4, so that the maintenance cost can be significantly reduced.
  • porous ceramics having high density and fine pores are suitable.
  • the heat resistance temperature is 400 degrees Celsius and the porosity is made by sintering alumina particles using a low melting point binder.
  • Commercially available porous alumina of about 20% to 45% can be used.
  • the low-density suction hole region (second region R2) other than the vicinity of the planned cutting line is formed of a metal in which a plurality of suction holes H2 are mechanically perforated. More specifically, an aluminum table structure in which a large number of holes are formed by machining with an adsorption hole diameter of 0.5 mm and a hole surface density of 1 piece / cm 2 can be used.
  • the substrate table 4 is composed of at least two regions. That is, the substrate table 4 includes a low-density suction hole region (second region R2) for fixing the substrate 110 and a fine suction hole region (highly provided to ensure higher quality cutting quality). It is a composite table (Hybrid Table) composed of the first region R1).
  • the low-density suction hole region (R2) an aluminum table structure in which the suction holes and the suction path are processed is used, so that the density near the planned cutting line is high.
  • a porous alumina table structure in which the suction path is processed is used for the fine adsorption hole region (R1) provided.
  • the substrate table 4 has the following characteristics.
  • the filter 64 for water removal is provided on the suction path 68 connected to the suction hole H1 formed in 1st area
  • the water droplets injected into the cooling region 44 are drained from the first exhaust hole 50 via the first adsorption hole H1 provided in the region around the planned cutting line L1, that is, the first region R1, and are used as a water removal filter. It is collected at 64 and discharged to the outside.
  • a water removal filter 64 may also be provided on the suction path 70 as necessary.
  • the intake pressures of the suction holes H1 formed in the first region R1 and the suction holes H2 formed in the second region R2 can be adjusted independently. It is desirable to be.
  • a first pressure regulator 62 and a second pressure regulator 66 are provided in the first suction path 68 and the second suction path 70, respectively.
  • the first pressure regulator 62 can adjust and optimize the adsorption force of the first region R1 in the vicinity of the planned cutting line L1 according to the properties of the substrate 110, specifically according to the material, thickness, and size. it can. Similarly, the adsorption force of the entire substrate 110 can be adjusted by the second pressure regulator 66 in the second region R2 provided with the low density adsorption holes H2.
  • the glass substrate having the LCD cell structure to be processed is formed by bonding two pieces of glass. Specifically, a parting process of cutting out a 36 mm ⁇ 44 mm LCD cell unit (individual sides) from a cell structure LCD substrate having a size of 144 mm ⁇ 144 mm bonded with glass having a glass thickness of 0.15 mm, followed by cutting The “bending amount ⁇ ” at the processing end portion (114 in FIG. 5) was measured. The bend amount ⁇ was measured using a shape measuring instrument (manufactured by Nakaden: FS1400) at the substrate cutting end portion 114 where the bend amount ⁇ is the largest and easily generated. As shown in FIG.
  • a shape measuring instrument manufactured by Nakaden: FS1400
  • the “bend amount ⁇ ” here is the amount of displacement with respect to the orthogonal direction of the planned cutting line L1 at the point of the substrate cutting end portion 114 and the point 3 mm before the end portion 114, respectively. It is defined by the difference of ( ⁇ 2 ⁇ 1).
  • the portion of the first region R1 of the substrate table 4 used in the experiment is a porous ceramic material having fine pores formed at a high density with a porosity of 40%, and is centered on the planned cutting line L1 of the first region R1.
  • the width is 10 mm.
  • the average linear density n1 and average diameter ⁇ 1 of the pores of the porous alumina used in this experiment are about 200 holes / cm and 36 ⁇ m, respectively.
  • the average linear density n1 is obtained by measuring five points on the planned cutting line using a stereomicroscope and calculating the average value, but only the pore diameters of about 10 ⁇ m or more are counted.
  • the average pore diameter ⁇ 1 is calculated from the measured value of the porosity ⁇ .
  • the porosity ⁇ is measured in accordance with JIS R1634 (measuring method of sintered ceramic density / open porosity of fine ceramics).
  • ⁇ 1 2 ( ⁇ / ⁇ ) 1/2 / n1 (4) That is, since the porosity ⁇ is 40% and the average linear density n1 is 100 / cm, the average diameter ⁇ 1 is obtained as 36 ⁇ m.
  • a similar glass substrate was cut using an aluminum table in which only a low-density suction hole was drilled by machining with a suction hole diameter of 0.5 mm and a linear density of suction holes of 1 piece / cm. Went.
  • the laser used for heating was a CO 2 laser, the cutting speed was 50 mm / s, the amount of heat applied to the substrate 110 was 1.3 W / mm 2 , and the amount of cooling water was about 6.6 ml / min.
  • the result of calculating ⁇ is shown in FIG.
  • the average value of the bending amount ⁇ is 1/4 compared to the case of fixing by the conventional aluminum table.
  • the variation was 1/5, and a significant improvement was obtained.
  • the substrate 110 is fixed by a conventional aluminum table
  • the water intervening between the table and the substrate 110 is unstable, and the cutting sometimes stops midway.
  • the substrate 110 was fixed by the hybrid substrate table 4 according to the embodiment, the cutting did not stop midway. This means that productivity is increased by using the substrate table 4.
  • the substrate 110 was fixed with a conventional aluminum table, the substrate 110 stuck to the table due to water intervening between the table and the substrate 110 and was difficult to remove.
  • the substrate table 4 according to the embodiment is used, there is an effect that the substrate 110 is not attached and can be easily removed.
  • the entire table surface necessary for fixing the substrate 110 is a hybrid type of the same size as compared with the case where the entire linear surface is made of porous ceramics having an average linear density of 200 / cm, an average pore diameter of 36 ⁇ m, and a porosity of 40%.
  • the required suction capacity is about half in the calculation, and a small vacuum source with a smaller capacity can be used. This leads to a reduction in the size and cost of the entire apparatus, and can be said to be a great advantage of the substrate table 4 according to the embodiment.
  • the width W of the first region R1 is an important parameter.
  • the width around the planned cutting line L1 in the first region R1 was 10 mm.
  • the width W of the first region R1 was verified.
  • the table structure used in the experiment is (1) A low-density adsorption hole structure made of aluminum is provided as a part of the second region R2, and a porous ceramic material having a high-density fine hole having a width of 3 mm with the planned cutting line L1 as the center is provided as a part of the first region R1.
  • a low-density adsorption hole structure made of aluminum is provided as a part of the second region R2, and a high-density fine hole having a width of 5 mm made of a porous ceramic material is provided around the planned cutting line L1 as a part of the first region R1.
  • a high-density fine hole having a width of 5 mm made of a porous ceramic material is provided around the planned cutting line L1 as a part of the first region R1.
  • a soda-lime glass plate having a substrate size of 150 mm ⁇ 150 mm and a thickness of 0.7 mm is divided into five strips of 30 mm ⁇ 150 mm. Processing was performed, and the bending ⁇ of the cutting line was compared after processing.
  • the laser used for heating was a CO 2 laser, the cutting speed was 50 mm / s, the amount of heat applied to the substrate 110 was 1.8 W / mm 2 , and the amount of cooling water was about 1.5 ml / min.
  • the number of samples measured is 8 each.
  • the width W of the porous ceramic material provided in the vicinity of the cutting line in (2) is 5 mm
  • the average value of the bending amount is 220 ⁇ m, which is almost the same as the average value of 190 ⁇ m in the case of (3). It was.
  • the width W of the porous ceramic material provided in the vicinity of the cutting line of (1) was 3 mm
  • the average value of the bending amount ⁇ was 330 ⁇ m, which was about 1.5 times worse. Therefore, it can be seen that the width W of the first region R1 made of high-density fine holes provided in the vicinity of the cutting line is preferably secured at least 5 mm or more around the cutting line.
  • FIG. 8 is a diagram showing a configuration of a substrate table 4 according to a modified example.
  • the substrate table 4a can be used when cutting out one glass substrate into three rows and three columns, and is cut in the X direction.
  • a first region R1 having high-density fine holes is provided with a predetermined width along the planned line L1x and the planned cutting line L1y in the Y direction.
  • the region other than the first region R1 is a second region R2 having a low density adsorption hole structure.
  • the present invention is not limited to this. That is, it may be integrally formed with the same material. Even in this case, the substrate table 4 is virtually divided into the first region R1 and the second region R2, and at least one of the above-described conditions (1) and (2), preferably both, is applied to each region. What is necessary is just to process and form the suction hole which fills.
  • a substrate table of a certain aspect is provided in a laser processing apparatus that cuts a substrate to be processed along a planned cutting line, and fixes the substrate.
  • the substrate table includes a plurality of suction holes formed on a surface that contacts the substrate.
  • the distribution density of the plurality of adsorption holes is higher as it approaches the planned cutting line, and lower as it moves away.
  • the distribution density of the suction holes may change discretely or stepwise as shown in FIG. 6B, or may change continuously.
  • a substrate table of a certain aspect is provided in a laser processing apparatus that cuts a substrate to be processed along a planned cutting line, and fixes the substrate.
  • the substrate table includes a plurality of suction holes formed on a surface that contacts the substrate. The diameters of the plurality of suction holes are smaller as they approach the planned cutting line and are larger as they move away. As shown in FIG. 6B, the diameter of the suction hole may change discretely or stepwise, or may change continuously.
  • a certain aspect of the present invention relates to a substrate table that is provided in a laser processing apparatus that cuts a substrate to be processed along a planned cutting line and fixes the substrate.
  • the substrate table includes a plurality of suction holes formed on a surface that contacts the substrate of the substrate table.
  • the substrate table is configured to include a relatively narrow first area including a planned cutting line and a relatively wide second area excluding the first area.
  • the average linear density of the suction holes in the direction of the cutting line included in the first region is larger than the average linear density of the suction holes in the entire region for fixing the substrate, and the suction holes on the cutting line included in the first region are The average diameter is smaller than the average diameter of the entire region.
  • the first area and the second area may be physically or mechanically divided, or may be virtually divided. According to this aspect, by distributing high-density suction holes with a small diameter in a region in the vicinity of the planned cutting line, the substrate can be securely fixed, the processing accuracy can be improved, and it is separated from the planned cutting line. By distributing large-diameter adsorption holes at a low density in the region, the capacity required for the pump can be reduced.
  • the average diameter ⁇ 1 of the suction holes formed in the first region is preferably 10 ⁇ m or more and 80 ⁇ m or less, and the average diameter ⁇ 2 of the suction holes formed in the second region may be 100 ⁇ m or more.
  • the linear density n1 of the suction holes formed in the first region in the direction of the cutting line is 50 / cm or more and 800 / cm or less, and the linear density n2 of the suction holes formed in the second region is 0.1. Pieces / cm or more and 10 pieces / cm or less may be used.
  • the average diameter ⁇ 1 and the linear density n1 of the suction holes provided in the first region are 0.5 ⁇ n1 ⁇ ⁇ 1 ⁇ 0.75 It is preferable to have the following relationship.
  • the width of the first region in the direction perpendicular to the planned cutting line is preferably 5 mm or more. If this width is too small, the fixing force may be insufficient. However, if the width is 5 mm or more, sufficient fixing force can be maintained with respect to the workpieces (cutting substrates) of various sizes and materials. Accuracy can be increased.
  • the suction holes formed in the first region may be in communication with each other inside the substrate, and the suction holes formed in the second region may be in communication with each other within the substrate.
  • the substrate table of a certain aspect may further include a filter for removing water provided on a suction path communicating with at least the suction hole formed in the first region.
  • a filter for removing water provided on a suction path communicating with at least the suction hole formed in the first region.
  • the suction pressures of the suction holes formed in the first region and the suction holes formed in the second region may be independently adjustable. In this case, since the optimum pressure can be applied to the workpiece for each position, the machining accuracy can be further increased.
  • the first area portion and the second area portion of the substrate table may be physically separated, and at least the first area portion may be configured to be replaceable. Since the first region is irradiated with the laser through the substrate, it is easily damaged by heat, and clogging due to cullet generated from the substrate is likely to occur. Therefore, the maintenance cost can be reduced by making the part of the first region replaceable.
  • the first region of the substrate table is a material that can withstand such high temperatures in order to form a high-temperature region exceeding 350 degrees Celsius inside the substrate such as glass by heating by laser irradiation, and is a fine through-hole of 80 ⁇ m or less or connected. It is preferable that the material is capable of easily forming fine holes densely and can be easily ground or polished on a smooth surface. For example, porous ceramics or porous silica gel having such heat resistance may be used.
  • the second area of the substrate table does not directly irradiate the laser on the table, so high heat resistance is not required, but it is a relatively wide area for fixing the substrate.
  • a certain aspect of the present invention relates to a substrate table that is provided in a laser processing apparatus that cuts a substrate to be processed along a planned cutting line and fixes the substrate.
  • the substrate table includes a plurality of suction holes formed on a surface that contacts the substrate of the substrate table.
  • the substrate table is divided into a first region including a planned cutting line and a second region sandwiching the first region, and suction holes are formed in the first region at a higher density than the second region.
  • the diameter of the suction holes formed in the second region is smaller than the diameter of the suction holes formed in the second region.
  • the maximum diameter of the suction holes formed in the first region may be 50 ⁇ m or less, and the average diameter of the suction holes formed in the second region may be 100 ⁇ m or more.
  • the line density in the direction of the cutting line of the suction holes formed in the first region is 50 / cm or more, more preferably 100 or more, and the surface density of the suction holes formed in the second region is 5 / It may be cm 2 or less, more preferably 1 piece / cm 2 or less.
  • the porosity of the material constituting the first region is in the range of 10% to 50%, and the linear density of the suction holes formed in the first region is in the range of 50 / cm to 500 / cm. Good.
  • the average diameter of the suction holes formed in the second region may be 100 ⁇ m or more, and the surface density of the suction holes may be 0.1 / cm 2 or more and 5 / cm 2 or less.
  • This laser processing apparatus includes a substrate table according to any one of the above-described embodiments for fixing a substrate, and laser irradiation for patterning a laser beam and irradiating the patterned laser beam onto a planned cutting line of the substrate fixed on the substrate table. Relative movement of the device, a cooling device that cools a predetermined cooling area on the planned cutting line by jetting a cooling medium, a substrate table that fixes the substrate, a laser irradiation area, and a cooling area in the direction of the planned cutting line A movable mechanism.
  • the present invention relates to processing technology for brittle material substrates such as glass substrates and semiconductor substrates.

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Abstract

Cette invention concerne un procédé de découpe d’un substrat mère en verre (1) d’un panneau d’affichage comprenant un premier substrat en verre (G1) et un second substrat en verre (G2) liés l’un à l’autre par des éléments de scellement (5) définissant plusieurs cellules agencées en matrice. Lors d’une première étape, une ligne de découpe est formée sur le premier substrat en verre (G1) en appliquant une ligne d’usinage prédéterminée (L1) dans un espace entre les éléments de scellement (5) de cellules adjacentes et en exposant le premier substrat en verre (G1) à un laser le long de la ligne d’usinage prédéterminée (L1). Lors d’une deuxième étape, le second substrat en verre (G2) est clivé en l’exposant à un laser le long de la ligne d’usinage prédéterminée (L1) et en refroidissant la zone voisine (40) d’exposition au laser. La contrainte générée au clivage du second substrat en verre (G2) est transmise au premier substrat en verre (G1) par l’intermédiaire des éléments de scellement (5), le premier substrat en verre (G1) étant clivé le long de la ligne de découpe sensiblement simultanément au clivage du second substrat en verre (G2).
PCT/JP2009/005192 2008-10-17 2009-10-06 Procédé de découpe d’un substrat mère en verre pour écran et d’un substrat de corps fragile, et procédé de fabrication de l’écran Ceased WO2010044217A1 (fr)

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JP2008268706A JP2010095414A (ja) 2008-10-17 2008-10-17 ディスプレイ用マザーガラス基板および脆性材料基板の切断方法、ディスプレイの製造方法
JP2008-321300 2008-12-17
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JP2011116611A (ja) * 2009-12-07 2011-06-16 Nippon Electric Glass Co Ltd 板状ガラスの切断方法及びその切断装置
CN102126229A (zh) * 2010-10-27 2011-07-20 意力(广州)电子科技有限公司 用于触摸屏半成品一次切割成型的切割机
CN102690051A (zh) * 2011-03-25 2012-09-26 海邦科技股份有限公司 玻璃板材的加工装置及方法
CN105479020A (zh) * 2014-10-06 2016-04-13 三星钻石工业股份有限公司 接合基板的切割方法
CN109592889A (zh) * 2017-09-29 2019-04-09 三星钻石工业株式会社 多层脆性材料基板的制作方法和制作系统
WO2020181023A1 (fr) * 2019-03-05 2020-09-10 Corning Incorporated Appareil de traitement de substrat de stratifié de verre et procédés de traitement et de découpe l'utilisant
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