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WO2009039844A3 - Polarisierte strahlung emittierender halbleiterchip - Google Patents

Polarisierte strahlung emittierender halbleiterchip Download PDF

Info

Publication number
WO2009039844A3
WO2009039844A3 PCT/DE2008/001583 DE2008001583W WO2009039844A3 WO 2009039844 A3 WO2009039844 A3 WO 2009039844A3 DE 2008001583 W DE2008001583 W DE 2008001583W WO 2009039844 A3 WO2009039844 A3 WO 2009039844A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor chip
radiation
polarized radiation
chip emitting
emitting polarized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/001583
Other languages
English (en)
French (fr)
Other versions
WO2009039844A2 (de
WO2009039844A9 (de
Inventor
Wolfgang Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2009039844A2 publication Critical patent/WO2009039844A2/de
Publication of WO2009039844A3 publication Critical patent/WO2009039844A3/de
Publication of WO2009039844A9 publication Critical patent/WO2009039844A9/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

Die Erfindung betrifft einen Strahlung emittierenden Halbleiterchip (1), der unter Ausnutzung des Purcell-Effekts polarisiertes Licht abstrahlt. Ein solcher polarisierte Strahlung emittierender Halbleiterchip (1) umfasst eine Strahlung erzeugende aktive Zone (3) und ein Polarisationsfilter (5), wobei die Strahlung erzeugende aktive Zone (3) zwischen einer Strahlungsauskoppelfläche des Halbleiterchips (1) und dem Polarisationsfilter (5) angeordnet ist.
PCT/DE2008/001583 2007-09-28 2008-09-26 Polarisierte strahlung emittierender halbleiterchip Ceased WO2009039844A2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007046613.9 2007-09-28
DE102007046613 2007-09-28
DE102007062041.3 2007-12-21
DE102007062041.3A DE102007062041B4 (de) 2007-09-28 2007-12-21 Polarisierte Strahlung emittierender Halbleiterchip

Publications (3)

Publication Number Publication Date
WO2009039844A2 WO2009039844A2 (de) 2009-04-02
WO2009039844A3 true WO2009039844A3 (de) 2009-07-09
WO2009039844A9 WO2009039844A9 (de) 2009-11-19

Family

ID=40384484

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/001583 Ceased WO2009039844A2 (de) 2007-09-28 2008-09-26 Polarisierte strahlung emittierender halbleiterchip

Country Status (3)

Country Link
DE (1) DE102007062041B4 (de)
TW (1) TW200921954A (de)
WO (1) WO2009039844A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2623695C1 (ru) * 2015-12-24 2017-06-28 Федеральное государственное бюджетное образовательное учреждение высшего образования "Владимирский Государственный Университет имени Александра Григорьевича и Николая Григорьевича Столетовых" (ВлГУ) Способ подавления спонтанной эмиссии квантовых излучателей в среде с диссипацией

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011017196A1 (de) 2011-04-15 2012-10-18 Osram Opto Semiconductors Gmbh Polarisierte Strahlung emittierender Halbleiterchip
US11620559B2 (en) 2019-02-06 2023-04-04 International Business Machines Corporation Reduction of spontaneous emission and thermal photon noise in quantum computing machines using a galvanically grounded filter

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0856049A (ja) * 1994-08-15 1996-02-27 Tokyo Inst Of Technol 面発光レーザの偏波制御法
JPH09214047A (ja) * 1996-02-01 1997-08-15 Fujitsu Ltd 面発光半導体レーザ
WO2001005008A1 (en) * 1999-07-10 2001-01-18 Qinetiq Limited Control of polarisation of vertical cavity surface emitting lasers
EP1577959A2 (de) * 2004-03-19 2005-09-21 LumiLeds Lighting U.S., LLC Halbleiter LED mit in der Ebene liegenden lichtemittierende Schichten
US20060043400A1 (en) * 2004-08-31 2006-03-02 Erchak Alexei A Polarized light emitting device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7291864B2 (en) 2005-02-28 2007-11-06 The Regents Of The University Of California Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0856049A (ja) * 1994-08-15 1996-02-27 Tokyo Inst Of Technol 面発光レーザの偏波制御法
JPH09214047A (ja) * 1996-02-01 1997-08-15 Fujitsu Ltd 面発光半導体レーザ
WO2001005008A1 (en) * 1999-07-10 2001-01-18 Qinetiq Limited Control of polarisation of vertical cavity surface emitting lasers
EP1577959A2 (de) * 2004-03-19 2005-09-21 LumiLeds Lighting U.S., LLC Halbleiter LED mit in der Ebene liegenden lichtemittierende Schichten
US20060043400A1 (en) * 2004-08-31 2006-03-02 Erchak Alexei A Polarized light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2623695C1 (ru) * 2015-12-24 2017-06-28 Федеральное государственное бюджетное образовательное учреждение высшего образования "Владимирский Государственный Университет имени Александра Григорьевича и Николая Григорьевича Столетовых" (ВлГУ) Способ подавления спонтанной эмиссии квантовых излучателей в среде с диссипацией

Also Published As

Publication number Publication date
DE102007062041A1 (de) 2009-04-02
WO2009039844A2 (de) 2009-04-02
DE102007062041B4 (de) 2021-10-21
WO2009039844A9 (de) 2009-11-19
TW200921954A (en) 2009-05-16

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