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WO2009037921A1 - インプリントリソグラフィ用モールド製作方法及びモールド - Google Patents

インプリントリソグラフィ用モールド製作方法及びモールド Download PDF

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Publication number
WO2009037921A1
WO2009037921A1 PCT/JP2008/063490 JP2008063490W WO2009037921A1 WO 2009037921 A1 WO2009037921 A1 WO 2009037921A1 JP 2008063490 W JP2008063490 W JP 2008063490W WO 2009037921 A1 WO2009037921 A1 WO 2009037921A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
mold
etching
imprint lithography
covering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063490
Other languages
English (en)
French (fr)
Inventor
Hiroshi Hiroshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Priority to US12/673,381 priority Critical patent/US8308961B2/en
Publication of WO2009037921A1 publication Critical patent/WO2009037921A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/009—Manufacturing the stamps or the moulds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Micromachines (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　モールドのパターン密度に依存した残膜分布が発生することを防止するため、インプリントリソグラフィに使用するモールドを、マスクを用いたエッチングにより製作するに際して、モールド面上に形成する所望のパターンを作製するための第１マスク（Ｍ１）と、前記第１マスクを部分的に覆い、第１のモールド面上に形成するパターンの開口率が高い程、第１マスク開口部を覆う面積を広くして、一定面積におけるモールド凹部の容積を均一化する第２マスク（Ｍ２）とを用い、第１マスクによりモールドをエッチングした後、第１マスクを除去しないで第２マスクにより第１マスクを部分的に覆って更にエッチングを行い、或いは最初から第１マスクと第２マスクを重ねた状態でエッチングを行い、第２マスクをエッチング遅延用マスクとして用いてエッチングを行う。
PCT/JP2008/063490 2007-09-19 2008-07-28 インプリントリソグラフィ用モールド製作方法及びモールド Ceased WO2009037921A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/673,381 US8308961B2 (en) 2007-09-19 2008-07-28 Method of producing a mold for imprint lithography, and mold

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-242734 2007-09-19
JP2007242734A JP5004225B2 (ja) 2007-09-19 2007-09-19 インプリントリソグラフィ用モールド製作方法

Publications (1)

Publication Number Publication Date
WO2009037921A1 true WO2009037921A1 (ja) 2009-03-26

Family

ID=40467745

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063490 Ceased WO2009037921A1 (ja) 2007-09-19 2008-07-28 インプリントリソグラフィ用モールド製作方法及びモールド

Country Status (3)

Country Link
US (1) US8308961B2 (ja)
JP (1) JP5004225B2 (ja)
WO (1) WO2009037921A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4792096B2 (ja) * 2009-03-19 2011-10-12 株式会社東芝 テンプレートパターンの設計方法、テンプレートの製造方法及び半導体装置の製造方法。
JP5446477B2 (ja) * 2009-06-03 2014-03-19 大日本印刷株式会社 描画方法、インプリント用モールドの製造方法及び描画システム
JP5252507B2 (ja) * 2009-12-17 2013-07-31 独立行政法人産業技術総合研究所 インプリントリソグラフィ用モールド製作方法
JP5238742B2 (ja) * 2010-03-19 2013-07-17 株式会社東芝 加工方法および加工装置
JP5349404B2 (ja) 2010-05-28 2013-11-20 株式会社東芝 パターン形成方法
JP2013077599A (ja) * 2011-09-29 2013-04-25 Hitachi High-Technologies Corp スタンパ、インプリント装置及び処理製品並びに処理製品製造装置及び処理製品製造方法
TWM429700U (en) * 2012-01-19 2012-05-21 Benq Materials Corp Engraving device
JP6083135B2 (ja) * 2012-06-08 2017-02-22 大日本印刷株式会社 ナノインプリント用テンプレート及びそれを用いたパターン形成方法
JP6260252B2 (ja) * 2013-12-16 2018-01-17 凸版印刷株式会社 インプリントモールド、インプリントモールドの製造方法、及びパターン形成方法
JP6598250B2 (ja) * 2016-04-26 2019-10-30 国立研究開発法人産業技術総合研究所 ナノインプリントリソグラフィ用モールドパターンの設計方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303503A (ja) * 2005-04-19 2006-11-02 Asml Netherlands Bv インプリント・リソグラフィ
JP2007230229A (ja) * 2006-02-01 2007-09-13 Canon Inc インプリント用モールド、該モールドによる構造体の製造方法、部材の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3542551A (en) * 1968-07-01 1970-11-24 Trw Semiconductors Inc Method of etching patterns into solid state devices
US20060230656A1 (en) * 1999-09-07 2006-10-19 Philipp Spengler Artificial portable fireplace
JP2003022585A (ja) * 2001-07-06 2003-01-24 Hitachi Maxell Ltd スタンパの製造方法及び原盤露光装置
DE10219398B4 (de) * 2002-04-30 2007-06-06 Infineon Technologies Ag Herstellungsverfahren für eine Grabenanordnung mit Gräben unterschiedlicher Tiefe in einem Halbleitersubstrat
US7256435B1 (en) * 2003-06-02 2007-08-14 Hewlett-Packard Development Company, L.P. Multilevel imprint lithography
JP4074262B2 (ja) * 2004-03-31 2008-04-09 株式会社東芝 磁気記録媒体およびその製造方法ならびに磁気記録再生装置
JP4290177B2 (ja) * 2005-06-08 2009-07-01 キヤノン株式会社 モールド、アライメント方法、パターン形成装置、パターン転写装置、及びチップの製造方法
JP4612514B2 (ja) * 2005-09-27 2011-01-12 株式会社東芝 磁気記録媒体用スタンパ、それを用いた磁気記録媒体の製造方法、および磁気記録媒体用スタンパの製造方法
JP4581963B2 (ja) * 2005-10-27 2010-11-17 Ｔｄｋ株式会社 スタンパー、凹凸パターン形成方法および情報記録媒体製造方法
US7690910B2 (en) * 2006-02-01 2010-04-06 Canon Kabushiki Kaisha Mold for imprint, process for producing minute structure using the mold, and process for producing the mold
WO2008126313A1 (ja) * 2007-03-30 2008-10-23 Pioneer Corporation インプリント用モールドおよびインプリント用モールドの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303503A (ja) * 2005-04-19 2006-11-02 Asml Netherlands Bv インプリント・リソグラフィ
JP2007230229A (ja) * 2006-02-01 2007-09-13 Canon Inc インプリント用モールド、該モールドによる構造体の製造方法、部材の製造方法

Also Published As

Publication number Publication date
JP2009072976A (ja) 2009-04-09
JP5004225B2 (ja) 2012-08-22
US8308961B2 (en) 2012-11-13
US20110159134A1 (en) 2011-06-30

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