[go: up one dir, main page]

WO2009078190A1 - パターン形成方法およびパターン形成体 - Google Patents

パターン形成方法およびパターン形成体 Download PDF

Info

Publication number
WO2009078190A1
WO2009078190A1 PCT/JP2008/062426 JP2008062426W WO2009078190A1 WO 2009078190 A1 WO2009078190 A1 WO 2009078190A1 JP 2008062426 W JP2008062426 W JP 2008062426W WO 2009078190 A1 WO2009078190 A1 WO 2009078190A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
forming method
resist material
reduced
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062426
Other languages
English (en)
French (fr)
Inventor
Munehisa Soma
Gaku Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP2008554557A priority Critical patent/JP4407770B2/ja
Publication of WO2009078190A1 publication Critical patent/WO2009078190A1/ja
Priority to US12/635,214 priority patent/US20100086877A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Micromachines (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

　本発明のパターン形成方法は、段差を有する基板上に形成されたレジスト材料からなるマスクパターンを縮小し、該マスクパターンを用いてエッチングを行う。段差を有する基板上にレジスト材料を成膜すると、レジスト材料は平坦に成膜されず、段差に応じて段差の凸パターン上に山なりに成膜される。このため、成膜されたレジスト材料を縮小させると、膜厚の薄い部位(山なり形状の端部)から縮小されることになり、自己整合的に直下の凸パターンの中心位置にマスクを形成することが出来る。
PCT/JP2008/062426 2007-12-17 2008-07-09 パターン形成方法およびパターン形成体 Ceased WO2009078190A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008554557A JP4407770B2 (ja) 2007-12-17 2008-07-09 パターン形成方法
US12/635,214 US20100086877A1 (en) 2007-12-17 2009-12-10 Pattern forming method and pattern form

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007324465 2007-12-17
JP2007-324465 2007-12-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/635,214 Continuation US20100086877A1 (en) 2007-12-17 2009-12-10 Pattern forming method and pattern form

Publications (1)

Publication Number Publication Date
WO2009078190A1 true WO2009078190A1 (ja) 2009-06-25

Family

ID=40795309

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062426 Ceased WO2009078190A1 (ja) 2007-12-17 2008-07-09 パターン形成方法およびパターン形成体

Country Status (3)

Country Link
US (1) US20100086877A1 (ja)
JP (1) JP4407770B2 (ja)
WO (1) WO2009078190A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010137538A (ja) * 2008-11-13 2010-06-24 Toppan Printing Co Ltd インプリントモールド製造方法およびインプリントモールド
CN103928314A (zh) * 2014-04-22 2014-07-16 上海华力微电子有限公司 一种底部无负载的自对准双层图形的制作方法
CN104051573A (zh) * 2014-06-17 2014-09-17 徐州工业职业技术学院 一种硅片掩膜制绒工艺
JP2019092473A (ja) * 2017-11-27 2019-06-20 大日本印刷株式会社 微細凹凸構造体
CN113224209A (zh) * 2020-02-05 2021-08-06 凌巨科技股份有限公司 太阳能电池缓坡结构及其制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5145654B2 (ja) * 2006-05-29 2013-02-20 日本電気株式会社 基板処理装置及び基板処理方法
US20130160832A1 (en) * 2011-12-22 2013-06-27 Andreas Krause Marking of a substrate of a solar cell
US8802574B2 (en) * 2012-03-13 2014-08-12 Globalfoundries Inc. Methods of making jogged layout routings double patterning compliant
CN103935954B (zh) * 2014-04-21 2015-10-28 陕西师范大学 利用自组装单分子膜对贵金属进行正性和负性刻蚀的方法
KR102329363B1 (ko) * 2015-04-20 2021-11-19 보드 오브 레젼츠, 더 유니버시티 오브 텍사스 시스템 대면적 다단 나노구조의 제조
CN105914183B (zh) * 2016-06-22 2019-04-30 深圳市华星光电技术有限公司 Tft基板的制造方法
US20230194991A1 (en) * 2021-12-22 2023-06-22 Seagate Technology Llc Imprint method for fabrication of low density nanopore membrane

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158068A (ja) * 2001-11-26 2003-05-30 Nec Kagoshima Ltd パターン形成方法及びそれを用いたアクティブマトリクス基板の製造方法
JP2004071587A (ja) * 2002-08-01 2004-03-04 Hitachi Ltd スタンパとスタンパを用いたパターン転写方法及び転写パターンによる構造体の形成方法
JP2007152546A (ja) * 2005-11-11 2007-06-21 Semiconductor Energy Lab Co Ltd 微小構造体及び微小電気機械式装置の作製方法
JP2007313814A (ja) * 2006-05-29 2007-12-06 Dainippon Printing Co Ltd モールドおよびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040123895A1 (en) * 2002-10-22 2004-07-01 Sunray Technologies, Inc. Diffractive structures for the redirection and concentration of optical radiation
US7396711B2 (en) * 2005-12-27 2008-07-08 Intel Corporation Method of fabricating a multi-cornered film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158068A (ja) * 2001-11-26 2003-05-30 Nec Kagoshima Ltd パターン形成方法及びそれを用いたアクティブマトリクス基板の製造方法
JP2004071587A (ja) * 2002-08-01 2004-03-04 Hitachi Ltd スタンパとスタンパを用いたパターン転写方法及び転写パターンによる構造体の形成方法
JP2007152546A (ja) * 2005-11-11 2007-06-21 Semiconductor Energy Lab Co Ltd 微小構造体及び微小電気機械式装置の作製方法
JP2007313814A (ja) * 2006-05-29 2007-12-06 Dainippon Printing Co Ltd モールドおよびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010137538A (ja) * 2008-11-13 2010-06-24 Toppan Printing Co Ltd インプリントモールド製造方法およびインプリントモールド
CN103928314A (zh) * 2014-04-22 2014-07-16 上海华力微电子有限公司 一种底部无负载的自对准双层图形的制作方法
CN104051573A (zh) * 2014-06-17 2014-09-17 徐州工业职业技术学院 一种硅片掩膜制绒工艺
JP2019092473A (ja) * 2017-11-27 2019-06-20 大日本印刷株式会社 微細凹凸構造体
CN113224209A (zh) * 2020-02-05 2021-08-06 凌巨科技股份有限公司 太阳能电池缓坡结构及其制造方法

Also Published As

Publication number Publication date
JP4407770B2 (ja) 2010-02-03
JPWO2009078190A1 (ja) 2011-04-28
US20100086877A1 (en) 2010-04-08

Similar Documents

Publication Publication Date Title
WO2009078190A1 (ja) パターン形成方法およびパターン形成体
WO2011090262A3 (ko) 경사 증착을 이용한 리소그래피 방법
TW200834245A (en) Method for manufacturing semiconductor device with four-layered laminate
WO2008146869A3 (en) Pattern forming method, pattern or mold formed thereby
WO2009085598A3 (en) Photoresist double patterning
WO2010065252A3 (en) Methods of fabricating substrates
TW200608144A (en) Photoresist undercoat-forming material and patterning process
TW200609667A (en) Photomask blank, photomask and method for manufacturing same
WO2009041551A1 (ja) マスクブランク、及びインプリント用モールドの製造方法
WO2009075075A1 (ja) 有機ｅｌデバイスおよびｅｌディスプレイパネル、ならびにそれらの製造方法
WO2009075793A3 (en) Controlling thickness of residual layer
WO2009009208A3 (en) Patterning structures using deformable substrates
TW201129872A (en) Pattern forming method and composition for forming resist underlayer film
TW200736839A (en) Antireflection film composition, patterning process and substrate using the same
EP2062950A3 (en) Topcoat composition, alkali developer-soluble topcoat film using the composition and pattern forming method using the same
WO2007137058A3 (en) Methods to reduce the minimum pitch in a pattern
WO2011033758A3 (en) Substrate structure including functional region and method for transferring functional region
WO2009154571A8 (en) A method of making an imprint on a polymer structure
WO2006004693A3 (en) Method for bilayer resist plasma etch
WO2010044546A3 (ko) 저항막 방식 터치 시트, 터치 패널 및 그 제조 방법
WO2008024643A3 (en) Patterning non-planar surfaces
WO2005013320A3 (en) A semiconductor device having an organic anti-reflective coating (arc) and method therefor
WO2008084639A1 (ja) 多層膜形成方法及び多層膜形成装置
WO2013036806A3 (en) Methods for manufacturing integrated circuit devices having features with reduced edge curvature
TW200637051A (en) Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2008554557

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08791013

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08791013

Country of ref document: EP

Kind code of ref document: A1