[go: up one dir, main page]

WO2009034775A1 - 焼結体の製造方法、焼結体、当該焼結体からなるスパッタリングターゲット及びスパッタリングターゲット－バッキングプレート組立体 - Google Patents

焼結体の製造方法、焼結体、当該焼結体からなるスパッタリングターゲット及びスパッタリングターゲット－バッキングプレート組立体 Download PDF

Info

Publication number
WO2009034775A1
WO2009034775A1 PCT/JP2008/062908 JP2008062908W WO2009034775A1 WO 2009034775 A1 WO2009034775 A1 WO 2009034775A1 JP 2008062908 W JP2008062908 W JP 2008062908W WO 2009034775 A1 WO2009034775 A1 WO 2009034775A1
Authority
WO
WIPO (PCT)
Prior art keywords
sintered body
sputtering target
backing plate
plate assembly
group element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062908
Other languages
English (en)
French (fr)
Inventor
Hideyuki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nippon Mining and Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Priority to US12/676,767 priority Critical patent/US20100206724A1/en
Priority to KR1020137017700A priority patent/KR101552028B1/ko
Priority to EP08791262.2A priority patent/EP2186917B1/en
Priority to JP2009532101A priority patent/JP5396276B2/ja
Publication of WO2009034775A1 publication Critical patent/WO2009034775A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　カルコゲナイド元素とＶｂ族元素の元素とを含み、各元素からなる原料粉末又は二以上の元素からなる合金の原料粉末を混合し、当該混合粉末を（式）Ｐ(圧力)≦｛Ｐｆ／（Ｔｆ－Ｔ０）｝×（Ｔ－Ｔ０) ＋Ｐ０、（Ｐｆ：最終到達圧力、Ｔｆ：最終到達温度、Ｐ０：大気圧、Ｔ：加熱温度、Ｔ０：室温、温度は摂氏温度）を満たす条件で、ホットプレスすることを特徴とする焼結体の製造方法。スパッタリングターゲット－バッキングプレートとして組立て、使用した場合であっても割れの生じない、高密度かつ高強度の大口径のカルコゲナイド元素（Ａ）とＶｂ族元素（Ｂ）又はこれらにさらにＩＶｂ族元素（Ｃ）及び／又は添加元素（Ｄ）を含有する焼結体の製造方法、当該焼結体、当該焼結体からなるスパッタリングターゲット及びスパッタリングターゲット－バッキングプレート組立体を提供する。
PCT/JP2008/062908 2007-09-13 2008-07-17 焼結体の製造方法、焼結体、当該焼結体からなるスパッタリングターゲット及びスパッタリングターゲット－バッキングプレート組立体 Ceased WO2009034775A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/676,767 US20100206724A1 (en) 2007-09-13 2008-07-17 Method of Producing Sintered Compact, Sintered Compact, Sputtering Target Formed from the same, and Sputtering Target-Backing Plate Assembly
KR1020137017700A KR101552028B1 (ko) 2007-09-13 2008-07-17 소결체의 제조 방법, 소결체, 당해 소결체로 이루어지는 스퍼터링 타겟 및 스퍼터링 타겟-백킹 플레이트 조립체
EP08791262.2A EP2186917B1 (en) 2007-09-13 2008-07-17 Method for producing sintered body, sintered body, sputtering target composed of the sintered body, and sputtering target-backing plate assembly
JP2009532101A JP5396276B2 (ja) 2007-09-13 2008-07-17 焼結体の製造方法、焼結体ターゲット及びスパッタリングターゲット−バッキングプレート組立体

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-238135 2007-09-13
JP2007238135 2007-09-13
JP2008-054397 2008-03-05
JP2008054397 2008-03-05

Publications (1)

Publication Number Publication Date
WO2009034775A1 true WO2009034775A1 (ja) 2009-03-19

Family

ID=40451787

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062908 Ceased WO2009034775A1 (ja) 2007-09-13 2008-07-17 焼結体の製造方法、焼結体、当該焼結体からなるスパッタリングターゲット及びスパッタリングターゲット－バッキングプレート組立体

Country Status (6)

Country Link
US (1) US20100206724A1 (ja)
EP (1) EP2186917B1 (ja)
JP (1) JP5396276B2 (ja)
KR (3) KR101175091B1 (ja)
TW (2) TWI488984B (ja)
WO (1) WO2009034775A1 (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010265544A (ja) * 2009-04-14 2010-11-25 Kobelco Kaken:Kk Ｃｕ−Ｇａ合金スパッタリングターゲットおよびその製造方法
RU2446229C1 (ru) * 2010-12-01 2012-03-27 Учреждение Российской академии наук ИНСТИТУТ ФИЗИКИ ТВЕРДОГО ТЕЛА РАН (ИФТТ РАН) Способ получения мишени для распыления из сплава на основе алюминия
RU2446228C1 (ru) * 2010-12-01 2012-03-27 Учреждение Российской академии наук ИНСТИТУТ ФИЗИКИ ТВЕРДОГО ТЕЛА РАН (ИФТТ РАН) Способ получения распыляемой мишени из сплава на основе алюминия
WO2011146913A3 (en) * 2010-05-21 2012-04-05 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
US8268665B2 (en) 2006-11-02 2012-09-18 Advanced Technology Materials, Inc. Antimony and germanium complexes useful for CVD/ALD of metal thin films
US8288198B2 (en) 2006-05-12 2012-10-16 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
US8410468B2 (en) 2009-07-02 2013-04-02 Advanced Technology Materials, Inc. Hollow GST structure with dielectric fill
US8617972B2 (en) 2009-05-22 2013-12-31 Advanced Technology Materials, Inc. Low temperature GST process
US8674127B2 (en) 2008-05-02 2014-03-18 Advanced Technology Materials, Inc. Antimony compounds useful for deposition of antimony-containing materials
US8796068B2 (en) 2008-02-24 2014-08-05 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US9012876B2 (en) 2010-03-26 2015-04-21 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
JP2017025349A (ja) * 2015-07-15 2017-02-02 三菱マテリアル株式会社 Ｔｅ−Ｇｅ系スパッタリングターゲット、及び、Ｔｅ−Ｇｅ系スパッタリングターゲットの製造方法
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4965579B2 (ja) * 2006-10-13 2012-07-04 Ｊｘ日鉱日石金属株式会社 Ｓｂ−Ｔｅ基合金焼結体スパッタリングターゲット
JP4885305B2 (ja) * 2008-03-17 2012-02-29 Ｊｘ日鉱日石金属株式会社 焼結体ターゲット及び焼結体の製造方法
US9299543B2 (en) 2009-05-27 2016-03-29 Jx Nippon Mining & Metals Corporation Target of sintered compact, and method of producing the sintered compact
DE102009031302A1 (de) * 2009-06-30 2011-01-05 O-Flexx Technologies Gmbh Verfahren zur Herstellung von thermoelektrischen Schichten
KR101445945B1 (ko) 2009-12-24 2014-09-29 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 가돌리늄제 스퍼터링 타깃 및 동 타깃의 제조 방법
KR20170020541A (ko) 2010-04-26 2017-02-22 제이엑스금속주식회사 Ｓｂ-Ｔｅ기 합금 소결체 스퍼터링 타깃
SG189977A1 (en) 2010-10-27 2013-06-28 Jx Nippon Mining & Metals Corp Sputtering target backing plate assembly and method for producing same
US8426242B2 (en) 2011-02-01 2013-04-23 Macronix International Co., Ltd. Composite target sputtering for forming doped phase change materials
US8871143B2 (en) * 2012-01-20 2014-10-28 Leonard Nanis Amalgam method for forming a sputter target useful in the manufacture of thin-film solar photovoltaic cells
JP5612147B2 (ja) * 2013-03-11 2014-10-22 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
KR20150007865A (ko) 2013-07-12 2015-01-21 삼성디스플레이 주식회사 스퍼터링 타겟의 제조 방법, 그 방법으로 제조된 스퍼터링 타겟 및 그 스퍼터링 타겟을 이용하여 유기 발광 표시 장치를 제조하는 방법
US9916958B1 (en) 2014-01-30 2018-03-13 Radiation Monitoring Devices, Inc. Alkali semi-metal films and method and apparatus for fabricating them
WO2015146394A1 (ja) * 2014-03-25 2015-10-01 Jx日鉱日石金属株式会社 Ｓｂ－Ｔｅ基合金焼結体スパッタリングターゲット
JP6021861B2 (ja) * 2014-08-06 2016-11-09 Ｊｘ金属株式会社 スパッタリングターゲット−バッキングプレート接合体
US10889887B2 (en) * 2016-08-22 2021-01-12 Honeywell International Inc. Chalcogenide sputtering target and method of making the same
JP2020132996A (ja) 2019-02-20 2020-08-31 三菱マテリアル株式会社 スパッタリングターゲット
US20240186127A1 (en) * 2022-06-23 2024-06-06 Intel Corporation Sputter targets for self-doped source and drain contacts

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03180468A (ja) 1989-12-08 1991-08-06 Matsushita Electric Ind Co Ltd スパッタ用ターゲットの製造方法
JPH05311423A (ja) * 1992-05-12 1993-11-22 Dowa Mining Co Ltd スパッタリング・ターゲットの製造方法
JPH1081962A (ja) 1996-09-06 1998-03-31 Sumitomo Metal Mining Co Ltd Ｇｅ−Ｔｅ−Ｓｂ系スパッタリング用ターゲット材の製造方法
JP2000265262A (ja) 1999-03-16 2000-09-26 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリング用ターゲット材の製造方法
JP2001098366A (ja) 1999-07-26 2001-04-10 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2001123266A (ja) 1999-10-21 2001-05-08 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2004162109A (ja) * 2002-11-12 2004-06-10 Nikko Materials Co Ltd スパッタリングターゲット及び同製造用粉末
WO2006059429A1 (ja) * 2004-11-30 2006-06-08 Nippon Mining & Metals Co., Ltd. Ｓｂ－Ｔｅ系合金焼結体スパッタリングターゲット

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3625928B2 (ja) * 1995-10-17 2005-03-02 東海カーボン株式会社 Ｔａ／Ｓｉ系焼結合金の製造方法
TWI232241B (en) * 2001-03-13 2005-05-11 Ind Tech Res Inst Method of regenerating a phase change sputtering target for optical storage media
CN100369141C (zh) * 2002-02-25 2008-02-13 日矿金属株式会社 相变型存储器用溅射靶及其制造方法
JP3850783B2 (ja) * 2002-10-08 2006-11-29 Ｔｄｋ株式会社 相変化材料ターゲットおよびその製造方法
JP4276849B2 (ja) * 2003-01-27 2009-06-10 日鉱金属株式会社 Ｇｅ−Ｃｒ合金スパッタリングターゲット
EP1600526B1 (en) * 2003-03-04 2010-03-31 Nippon Mining & Metals Co., Ltd. Sputtering target and process for producing the same
TWI365914B (en) * 2003-07-03 2012-06-11 Mitsubishi Materials Corp Phase change recording film having high electrical resistance and sputtering target for forming phase change recording film
EP1829985B1 (en) * 2004-12-24 2013-10-16 JX Nippon Mining & Metals Corporation Sb-Te ALLOY SINTERING PRODUCT TARGET
DE602005020509D1 (de) * 2005-01-18 2010-05-20 Nippon Mining Co Pulver auf sb-te basierender legierung zum sintern und ein durch sintern des pulvers hergestelltes gesintertes sputtertarget und verfahren zur herstellung des pulvers auf sb-te basierender legierung zum sintern
US20070099332A1 (en) * 2005-07-07 2007-05-03 Honeywell International Inc. Chalcogenide PVD components and methods of formation
JP4965579B2 (ja) * 2006-10-13 2012-07-04 Ｊｘ日鉱日石金属株式会社 Ｓｂ−Ｔｅ基合金焼結体スパッタリングターゲット
JP4885305B2 (ja) * 2008-03-17 2012-02-29 Ｊｘ日鉱日石金属株式会社 焼結体ターゲット及び焼結体の製造方法
US9299543B2 (en) * 2009-05-27 2016-03-29 Jx Nippon Mining & Metals Corporation Target of sintered compact, and method of producing the sintered compact
KR20170020541A (ko) * 2010-04-26 2017-02-22 제이엑스금속주식회사 Ｓｂ-Ｔｅ기 합금 소결체 스퍼터링 타깃

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03180468A (ja) 1989-12-08 1991-08-06 Matsushita Electric Ind Co Ltd スパッタ用ターゲットの製造方法
JPH05311423A (ja) * 1992-05-12 1993-11-22 Dowa Mining Co Ltd スパッタリング・ターゲットの製造方法
JPH1081962A (ja) 1996-09-06 1998-03-31 Sumitomo Metal Mining Co Ltd Ｇｅ−Ｔｅ−Ｓｂ系スパッタリング用ターゲット材の製造方法
JP2000265262A (ja) 1999-03-16 2000-09-26 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリング用ターゲット材の製造方法
JP2001098366A (ja) 1999-07-26 2001-04-10 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2001123266A (ja) 1999-10-21 2001-05-08 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2004162109A (ja) * 2002-11-12 2004-06-10 Nikko Materials Co Ltd スパッタリングターゲット及び同製造用粉末
WO2006059429A1 (ja) * 2004-11-30 2006-06-08 Nippon Mining & Metals Co., Ltd. Ｓｂ－Ｔｅ系合金焼結体スパッタリングターゲット

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2186917A4

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8679894B2 (en) 2006-05-12 2014-03-25 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
US8288198B2 (en) 2006-05-12 2012-10-16 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
US9219232B2 (en) 2006-11-02 2015-12-22 Entegris, Inc. Antimony and germanium complexes useful for CVD/ALD of metal thin films
US8268665B2 (en) 2006-11-02 2012-09-18 Advanced Technology Materials, Inc. Antimony and germanium complexes useful for CVD/ALD of metal thin films
US8709863B2 (en) 2006-11-02 2014-04-29 Advanced Technology Materials, Inc. Antimony and germanium complexes useful for CVD/ALD of metal thin films
US9537095B2 (en) 2008-02-24 2017-01-03 Entegris, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US8796068B2 (en) 2008-02-24 2014-08-05 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US8674127B2 (en) 2008-05-02 2014-03-18 Advanced Technology Materials, Inc. Antimony compounds useful for deposition of antimony-containing materials
US9034688B2 (en) 2008-05-02 2015-05-19 Entegris, Inc. Antimony compounds useful for deposition of antimony-containing materials
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
JP2010265544A (ja) * 2009-04-14 2010-11-25 Kobelco Kaken:Kk Ｃｕ−Ｇａ合金スパッタリングターゲットおよびその製造方法
US8617972B2 (en) 2009-05-22 2013-12-31 Advanced Technology Materials, Inc. Low temperature GST process
US9070875B2 (en) 2009-05-22 2015-06-30 Entegris, Inc. Low temperature GST process
US8410468B2 (en) 2009-07-02 2013-04-02 Advanced Technology Materials, Inc. Hollow GST structure with dielectric fill
US9012876B2 (en) 2010-03-26 2015-04-21 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US9190609B2 (en) 2010-05-21 2015-11-17 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
WO2011146913A3 (en) * 2010-05-21 2012-04-05 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
RU2446229C1 (ru) * 2010-12-01 2012-03-27 Учреждение Российской академии наук ИНСТИТУТ ФИЗИКИ ТВЕРДОГО ТЕЛА РАН (ИФТТ РАН) Способ получения мишени для распыления из сплава на основе алюминия
RU2446228C1 (ru) * 2010-12-01 2012-03-27 Учреждение Российской академии наук ИНСТИТУТ ФИЗИКИ ТВЕРДОГО ТЕЛА РАН (ИФТТ РАН) Способ получения распыляемой мишени из сплава на основе алюминия
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
JP2017025349A (ja) * 2015-07-15 2017-02-02 三菱マテリアル株式会社 Ｔｅ−Ｇｅ系スパッタリングターゲット、及び、Ｔｅ−Ｇｅ系スパッタリングターゲットの製造方法

Also Published As

Publication number Publication date
EP2186917B1 (en) 2021-04-21
JPWO2009034775A1 (ja) 2010-12-24
EP2186917A4 (en) 2016-07-20
TW201414860A (zh) 2014-04-16
KR101175091B1 (ko) 2012-08-21
KR101552028B1 (ko) 2015-09-09
TWI432590B (zh) 2014-04-01
US20100206724A1 (en) 2010-08-19
JP5396276B2 (ja) 2014-01-22
TWI488984B (zh) 2015-06-21
EP2186917A1 (en) 2010-05-19
KR20120068967A (ko) 2012-06-27
TW200918679A (en) 2009-05-01
KR20130085447A (ko) 2013-07-29
KR20100047897A (ko) 2010-05-10

Similar Documents

Publication Publication Date Title
WO2009034775A1 (ja) 焼結体の製造方法、焼結体、当該焼結体からなるスパッタリングターゲット及びスパッタリングターゲット－バッキングプレート組立体
CN101531533B (zh) 一种低碳镁碳砖及其制备方法
EP1066899A3 (en) Sputtering target, method of making same, and high-melting metal powder material
WO2009103795A3 (de) Wärmespeicher-verbundmaterial
EP3666858A3 (en) A method of preparing ceramic composite particles
MY150197A (en) Method for producing lithium transition metal polyanion powders for batteries
WO2012047657A3 (en) Ceramic-ceramic composites and process therefor, nuclear fuels formed thereby, and nuclear reactor systems and processes operated therewith
SG149767A1 (en) Method for producing sputtering target material for ni-w based interlayer
EP1083580A3 (en) Process for producing amorphous magnetically soft body
JP2010507550A5 (ja)
CN106187218A (zh) 一种氧化铬耐火材料及其制备方法
CN103936434A (zh) 一种Al2O3-Cr2O3-MgO耐火砖
MX2016000061A (es) Proceso de preparacion de un metamaterial con indice de refraccion negativo.
CN102031411B (zh) 致密W-Cu复合材料的低温制备方法
CN104072139A (zh) 金属钛碳化物陶瓷的制备方法
GB201206072D0 (en) Containment element, assembly comprising same, method of making same and method of using same
WO2007093176A3 (en) Modified coke lumps for mineral melting furnaces
IN2012DN00992A (ja)
CN101362635A (zh) 硅质保温制品及其制备方法
CN107726856A (zh) 一种具有高热辐射和强断热性能的耐高温炉墙复合内衬
Pavkov et al. Synthesis and characterization of metal-glass composite material
CN103113128A (zh) 一种轻质多孔隔热砖
CN104086186A (zh) 一种不烧镁铬砖
WO2009045605A3 (en) Thermo-optically functional compositions, systems and methods of making
CN104291369A (zh) 一种低温合成镁铝尖晶石的方法

Legal Events

Date Code Title Description
DPE2 Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08791262

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009532101

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2008791262

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20107005497

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12676767

Country of ref document: US