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WO2009034623A1 - 固体撮像素子 - Google Patents

固体撮像素子 Download PDF

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Publication number
WO2009034623A1
WO2009034623A1 PCT/JP2007/067732 JP2007067732W WO2009034623A1 WO 2009034623 A1 WO2009034623 A1 WO 2009034623A1 JP 2007067732 W JP2007067732 W JP 2007067732W WO 2009034623 A1 WO2009034623 A1 WO 2009034623A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
image sensor
semiconductor
solid
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/067732
Other languages
English (en)
French (fr)
Inventor
Fujio Masuoka
Hiroki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisantis Electronics Japan Ltd
Original Assignee
Unisantis Electronics Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics Japan Ltd filed Critical Unisantis Electronics Japan Ltd
Priority to TW096133988A priority Critical patent/TW200913244A/zh
Priority to EP07807139.6A priority patent/EP2197032B1/en
Priority to EP12001395A priority patent/EP2461363A1/en
Priority to JP2009532004A priority patent/JP4793493B2/ja
Priority to KR1020107007068A priority patent/KR101109088B1/ko
Priority to PCT/JP2007/067732 priority patent/WO2009034623A1/ja
Priority to CN2007801015144A priority patent/CN101855725B/zh
Priority to JP2008532522A priority patent/JP5350795B2/ja
Priority to KR1020087032238A priority patent/KR101011518B1/ko
Priority to TW097109993A priority patent/TWI443810B/zh
Priority to EP08722595.9A priority patent/EP2190018B1/en
Priority to PCT/JP2008/055231 priority patent/WO2009034731A1/ja
Priority to CN2008800004414A priority patent/CN101542733B/zh
Priority to US12/268,126 priority patent/US7872287B2/en
Publication of WO2009034623A1 publication Critical patent/WO2009034623A1/ja
Priority to US12/700,294 priority patent/US8330089B2/en
Anticipated expiration legal-status Critical
Priority to JP2013019798A priority patent/JP2013138222A/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　画素の高集積なCMOSイメージセンサを提供する。 　固体撮像素子は、Si基板上に信号線(256)が形成され、信号線の上に島状半導体が形成される。島状半導体は、信号線に接続された第１の半導体層(252)と、第１の半導体層の上側に隣接する第２の半導体層(251)と、第２の半導体層に絶縁膜を介して接続されたゲート(253)と、第２の半導体層に接続され、受光すると電荷量が変化する第３の半導体層(254)からなる電荷蓄積部と、第２の半導体層と前記第３の半導体層の上側に隣接する第４の半導体層(250)と、を備える。島状半導体上部の前記第４の半導体層に接続する画素選択線(255)が形成される。
PCT/JP2007/067732 2007-09-12 2007-09-12 固体撮像素子 Ceased WO2009034623A1 (ja)

Priority Applications (16)

Application Number Priority Date Filing Date Title
TW096133988A TW200913244A (en) 2007-09-12 2007-09-12 A solid state imaging device
EP07807139.6A EP2197032B1 (en) 2007-09-12 2007-09-12 Solid-state imaging device
EP12001395A EP2461363A1 (en) 2007-09-12 2007-09-12 Solid-state imaging device
JP2009532004A JP4793493B2 (ja) 2007-09-12 2007-09-12 固体撮像素子及びその駆動方法並びに固体撮像素子行列
KR1020107007068A KR101109088B1 (ko) 2007-09-12 2007-09-12 고체촬상소자
PCT/JP2007/067732 WO2009034623A1 (ja) 2007-09-12 2007-09-12 固体撮像素子
CN2007801015144A CN101855725B (zh) 2007-09-12 2007-09-12 固态摄像组件
TW097109993A TWI443810B (zh) 2007-09-12 2008-03-21 固態攝像裝置，及固態攝像元件的製造方法
KR1020087032238A KR101011518B1 (ko) 2007-09-12 2008-03-21 고체촬상소자
JP2008532522A JP5350795B2 (ja) 2007-09-12 2008-03-21 固体撮像素子
EP08722595.9A EP2190018B1 (en) 2007-09-12 2008-03-21 Solid-state imaging element
PCT/JP2008/055231 WO2009034731A1 (ja) 2007-09-12 2008-03-21 固体撮像素子
CN2008800004414A CN101542733B (zh) 2007-09-12 2008-03-21 固体摄像元件
US12/268,126 US7872287B2 (en) 2007-09-12 2008-11-10 Solid-state imaging device
US12/700,294 US8330089B2 (en) 2007-09-12 2010-02-04 Solid-state imaging device
JP2013019798A JP2013138222A (ja) 2007-09-12 2013-02-04 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/067732 WO2009034623A1 (ja) 2007-09-12 2007-09-12 固体撮像素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/700,294 Continuation US8330089B2 (en) 2007-09-12 2010-02-04 Solid-state imaging device

Publications (1)

Publication Number Publication Date
WO2009034623A1 true WO2009034623A1 (ja) 2009-03-19

Family

ID=40451647

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2007/067732 Ceased WO2009034623A1 (ja) 2007-09-12 2007-09-12 固体撮像素子
PCT/JP2008/055231 Ceased WO2009034731A1 (ja) 2007-09-12 2008-03-21 固体撮像素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055231 Ceased WO2009034731A1 (ja) 2007-09-12 2008-03-21 固体撮像素子

Country Status (7)

Country Link
US (1) US7872287B2 (ja)
EP (3) EP2461363A1 (ja)
JP (1) JP4793493B2 (ja)
KR (2) KR101109088B1 (ja)
CN (2) CN101855725B (ja)
TW (2) TW200913244A (ja)
WO (2) WO2009034623A1 (ja)

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Publication number Priority date Publication date Assignee Title
JP4769910B1 (ja) * 2011-02-18 2011-09-07 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
JP4769911B1 (ja) * 2010-10-29 2011-09-07 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
WO2011111662A1 (ja) * 2010-03-08 2011-09-15 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
JP2011211161A (ja) * 2010-03-12 2011-10-20 Unisantis Electronics Japan Ltd 固体撮像装置
CN102347342A (zh) * 2010-07-30 2012-02-08 新加坡优尼山帝斯电子私人有限公司 固体摄像器件
JP2012050055A (ja) * 2010-07-30 2012-03-08 Unisantis Electronics Singapore Pte Ltd 固体撮像装置
WO2012120951A1 (ja) * 2011-03-08 2012-09-13 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法、及び、半導体装置
JP5114608B2 (ja) * 2011-03-08 2013-01-09 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法、及び、半導体装置
US8372713B2 (en) 2008-01-29 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
WO2013035189A1 (ja) * 2011-09-08 2013-03-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 固体撮像装置
US8476699B2 (en) 2011-03-08 2013-07-02 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
WO2013118646A1 (ja) * 2012-02-10 2013-08-15 ソニー株式会社 撮像素子、製造装置および方法、並びに、撮像装置
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
JP2018011351A (ja) * 2013-01-31 2018-01-18 アップル インコーポレイテッド 垂直積層型画像センサ
JP2020061561A (ja) * 2015-09-30 2020-04-16 株式会社ニコン 撮像素子および撮像装置
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EP2461363A1 (en) * 2007-09-12 2012-06-06 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
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JP5173496B2 (ja) * 2008-03-06 2013-04-03 キヤノン株式会社 撮像装置及び撮像システム
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WO2013038553A1 (ja) * 2011-09-15 2013-03-21 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法、及び、半導体装置
DE102013110695A1 (de) 2012-10-02 2014-04-03 Samsung Electronics Co., Ltd. Bildsensor, Verfahren zum Betreiben desselben und Bildverarbeitungssystem mit demselben
JP5563179B1 (ja) * 2012-10-16 2014-07-30 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 固体撮像装置
US8921905B2 (en) 2012-10-16 2014-12-30 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
KR102242563B1 (ko) 2015-03-11 2021-04-20 삼성전자주식회사 픽셀 패턴 및 이를 포함하는 이미지 센서
KR102471593B1 (ko) * 2015-06-09 2022-11-29 에스케이하이닉스 주식회사 수직 전송 게이트를 갖는 이미지 센서 및 그 제조방법
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Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8372713B2 (en) 2008-01-29 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8647947B2 (en) 2009-04-28 2014-02-11 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
KR101211442B1 (ko) 2010-03-08 2012-12-12 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 고체 촬상 장치
WO2011111662A1 (ja) * 2010-03-08 2011-09-15 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
JP4912513B2 (ja) * 2010-03-08 2012-04-11 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 固体撮像装置
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
JP2011211161A (ja) * 2010-03-12 2011-10-20 Unisantis Electronics Japan Ltd 固体撮像装置
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8609494B2 (en) 2010-06-09 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
JP2012050055A (ja) * 2010-07-30 2012-03-08 Unisantis Electronics Singapore Pte Ltd 固体撮像装置
US8426902B2 (en) 2010-07-30 2013-04-23 Unisantis Electronics Singapore Pte Ltd. Solid-state imaging device
CN102347342A (zh) * 2010-07-30 2012-02-08 新加坡优尼山帝斯电子私人有限公司 固体摄像器件
CN102347342B (zh) * 2010-07-30 2014-03-12 新加坡优尼山帝斯电子私人有限公司 固体摄像器件
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