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WO2009028627A1 - Ｌｅｄチップの実装方法 - Google Patents

Ｌｅｄチップの実装方法 Download PDF

Info

Publication number
WO2009028627A1
WO2009028627A1 PCT/JP2008/065452 JP2008065452W WO2009028627A1 WO 2009028627 A1 WO2009028627 A1 WO 2009028627A1 JP 2008065452 W JP2008065452 W JP 2008065452W WO 2009028627 A1 WO2009028627 A1 WO 2009028627A1
Authority
WO
WIPO (PCT)
Prior art keywords
led chip
metal layer
base material
insulating base
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065452
Other languages
English (en)
French (fr)
Inventor
Youji Urano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Panasonic Electric Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Electric Works Co Ltd filed Critical Panasonic Electric Works Co Ltd
Priority to EP08828584.6A priority Critical patent/EP2197046B1/en
Priority to US12/733,401 priority patent/US8802460B2/en
Publication of WO2009028627A1 publication Critical patent/WO2009028627A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10W72/073—
    • H10W72/07336—
    • H10W72/075—
    • H10W72/325—
    • H10W72/352—
    • H10W72/353—
    • H10W72/354—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/884—
    • H10W74/00—
    • H10W90/734—
    • H10W90/754—
    • H10W95/00—

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

　フラックスを用いることなく共晶接合部へのボイドの発生を抑制することが可能なＬＥＤチップの実装方法を提供する。裏面に第１の接続用金属層（例えば、ＡｕＳｎ層）１１を設けたＬＥＤチップ１０と当該ＬＥＤチップ１０を搭載する支持金属層３１を設けた絶縁基材（搭載部材）３０とを共晶接合させるＬＥＤチップ１０の実装方法であって、絶縁基材３０の支持金属層３１の上面に第１の接続用金属層１１と同じ組成の第２の接続用金属層３４を形成した後、絶縁基材３０を支持金属層３１が設けられた面とは反対側から加熱源（ヒータなど）により加熱して第２の接続用金属層３４を溶融させた状態でＬＥＤチップ１０と絶縁基材３０とを近づけて共晶接合させるようにしている。
PCT/JP2008/065452 2007-08-28 2008-08-28 Ｌｅｄチップの実装方法 Ceased WO2009028627A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08828584.6A EP2197046B1 (en) 2007-08-28 2008-08-28 Led chip mounting method
US12/733,401 US8802460B2 (en) 2007-08-28 2008-08-28 Method of mounting LED chip

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007221827A JP2009054892A (ja) 2007-08-28 2007-08-28 Ｌｅｄチップの実装方法
JP2007-221827 2007-08-28

Publications (1)

Publication Number Publication Date
WO2009028627A1 true WO2009028627A1 (ja) 2009-03-05

Family

ID=40387341

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065452 Ceased WO2009028627A1 (ja) 2007-08-28 2008-08-28 Ｌｅｄチップの実装方法

Country Status (4)

Country Link
US (1) US8802460B2 (ja)
EP (1) EP2197046B1 (ja)
JP (1) JP2009054892A (ja)
WO (1) WO2009028627A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8598602B2 (en) 2009-01-12 2013-12-03 Cree, Inc. Light emitting device packages with improved heat transfer
US9111778B2 (en) 2009-06-05 2015-08-18 Cree, Inc. Light emitting diode (LED) devices, systems, and methods
KR20120068831A (ko) * 2009-07-17 2012-06-27 덴끼 가가꾸 고교 가부시키가이샤 Ｌｅｄ 칩 접합체, ｌｅｄ 패키지, 및 ｌｅｄ 패키지의 제조 방법
US8357553B2 (en) 2010-10-08 2013-01-22 Guardian Industries Corp. Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same
TW201251140A (en) 2011-01-31 2012-12-16 Cree Inc High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
CN103348496A (zh) 2011-02-07 2013-10-09 克利公司 用于发光二极管（led）发光的部件和方法
US9380703B2 (en) * 2013-02-20 2016-06-28 Raytheon Company Carrier board for attachment of integrated circuit to circuit board
US10403792B2 (en) 2016-03-07 2019-09-03 Rayvio Corporation Package for ultraviolet emitting devices
US20180006203A1 (en) * 2016-07-01 2018-01-04 Rayvio Corporation Ultraviolet emitting device
CN106935695A (zh) * 2017-05-17 2017-07-07 广东工业大学 一种紫外led器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0951108A (ja) * 1995-08-04 1997-02-18 Furukawa Electric Co Ltd:The 光受発光素子モジュール及びその製作方法
JP2003198038A (ja) * 2001-12-28 2003-07-11 Sharp Corp 半導体発光装置、半導体発光装置用マウント部材および半導体発光装置の製造方法
JP2007137744A (ja) * 2005-11-22 2007-06-07 Taiheiyo Material Kk 急硬化材および地盤注入材
JP2007149976A (ja) 2005-11-28 2007-06-14 Stanley Electric Co Ltd 共晶ボンディング発光装置とその製造方法
JP2007528601A (ja) * 2004-03-09 2007-10-11 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 信頼性が高く、費用効果があり、熱的に強いＡｕＳｎダイ取付け技術

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JPS5789194A (en) 1980-11-21 1982-06-03 Hitachi Ltd System of measuring quantity of processing
JPH02150041A (ja) * 1988-12-01 1990-06-08 Fujitsu Ltd 光半導体ベアチップのダイボンディング方法
JP2825365B2 (ja) * 1991-04-19 1998-11-18 古河電気工業株式会社 Ｌｅｄアレイチップとヒートシンク基板との接合方法
US5234153A (en) * 1992-08-28 1993-08-10 At&T Bell Laboratories Permanent metallic bonding method
JP3975569B2 (ja) * 1998-09-01 2007-09-12 ソニー株式会社 実装基板及びその製造方法
JP3645765B2 (ja) * 1999-11-12 2005-05-11 シャープ株式会社 はんだ接続部構造、ｂｇａ型半導体パッケージの実装構造およびｂｇａ型半導体パッケージの実装プロセス
JP2002334906A (ja) 2001-05-09 2002-11-22 Matsushita Electric Ind Co Ltd フリップチップの実装方法
US7057294B2 (en) * 2001-07-13 2006-06-06 Rohm Co., Ltd. Semiconductor device
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0951108A (ja) * 1995-08-04 1997-02-18 Furukawa Electric Co Ltd:The 光受発光素子モジュール及びその製作方法
JP2003198038A (ja) * 2001-12-28 2003-07-11 Sharp Corp 半導体発光装置、半導体発光装置用マウント部材および半導体発光装置の製造方法
JP2007528601A (ja) * 2004-03-09 2007-10-11 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 信頼性が高く、費用効果があり、熱的に強いＡｕＳｎダイ取付け技術
JP2007137744A (ja) * 2005-11-22 2007-06-07 Taiheiyo Material Kk 急硬化材および地盤注入材
JP2007149976A (ja) 2005-11-28 2007-06-14 Stanley Electric Co Ltd 共晶ボンディング発光装置とその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2197046A4

Also Published As

Publication number Publication date
US8802460B2 (en) 2014-08-12
EP2197046A1 (en) 2010-06-16
EP2197046A4 (en) 2013-03-06
JP2009054892A (ja) 2009-03-12
US20100210048A1 (en) 2010-08-19
EP2197046B1 (en) 2016-12-21

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