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WO2009013984A1 - 化合物半導体気相成長装置用ＡｌＮ製部材およびそれを用いた化合物半導体の製造方法 - Google Patents

化合物半導体気相成長装置用ＡｌＮ製部材およびそれを用いた化合物半導体の製造方法 Download PDF

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Publication number
WO2009013984A1
WO2009013984A1 PCT/JP2008/062095 JP2008062095W WO2009013984A1 WO 2009013984 A1 WO2009013984 A1 WO 2009013984A1 JP 2008062095 W JP2008062095 W JP 2008062095W WO 2009013984 A1 WO2009013984 A1 WO 2009013984A1
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WIPO (PCT)
Prior art keywords
compound semiconductor
aln
vapor deposition
same
deposition apparatus
Prior art date
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Ceased
Application number
PCT/JP2008/062095
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English (en)
French (fr)
Inventor
Tomohisa Arai
Michiyasu Komatsu
Shigetaka Tamura
Katsuhiro Shinosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Niterra Materials Co Ltd
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Toshiba Corp
Toshiba Materials Co Ltd
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Publication date
Application filed by Toshiba Corp, Toshiba Materials Co Ltd filed Critical Toshiba Corp
Priority to JP2009524434A priority Critical patent/JP5624317B2/ja
Publication of WO2009013984A1 publication Critical patent/WO2009013984A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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Abstract

　化合物半導体製造装置用部材として、高温環境下でのゆがみが少ない部材を提供する。ＡｌＮ部材がＡｌＮ焼結体を有し、ＡｌＮ焼結体中のＡｌＮの割合が９７～１００質量％の範囲内である化合物半導体製造装置用ＡｌＮ部材とする。
PCT/JP2008/062095 2007-07-24 2008-07-03 化合物半導体気相成長装置用ＡｌＮ製部材およびそれを用いた化合物半導体の製造方法 Ceased WO2009013984A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009524434A JP5624317B2 (ja) 2007-07-24 2008-07-03 化合物半導体気相成長装置用ＡｌＮ製部材およびそれを用いた化合物半導体の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007191920 2007-07-24
JP2007-191920 2007-07-24

Publications (1)

Publication Number Publication Date
WO2009013984A1 true WO2009013984A1 (ja) 2009-01-29

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PCT/JP2008/062095 Ceased WO2009013984A1 (ja) 2007-07-24 2008-07-03 化合物半導体気相成長装置用ＡｌＮ製部材およびそれを用いた化合物半導体の製造方法

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JP (1) JP5624317B2 (ja)
TW (1) TWI390609B (ja)
WO (1) WO2009013984A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011037691A (ja) * 2009-08-18 2011-02-24 Toshiba Corp 高熱伝導性窒化アルミニウム焼結体、これを用いた基板、回路基板、および半導体装置、ならびに高熱伝導性窒化アルミニウム焼結体の製造方法
WO2015114977A1 (ja) * 2014-01-29 2015-08-06 東京エレクトロン株式会社 基板処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09315867A (ja) * 1996-03-29 1997-12-09 Ngk Insulators Ltd 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック
JP2002255653A (ja) * 2001-02-28 2002-09-11 Kyocera Corp 窒化アルミニウム質焼結体
JP2005045170A (ja) * 2003-07-25 2005-02-17 Tokyo Electron Ltd ガス反応装置
JP2005072321A (ja) * 2003-08-26 2005-03-17 Kyocera Corp ウェハ支持部材とその製造方法
JP2006306653A (ja) * 2005-03-30 2006-11-09 Tokuyama Corp 窒化アルミニウム焼結体及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214359A (ja) * 1998-01-22 1999-08-06 Sumitomo Metal Ind Ltd マイクロ波導入窓用部材

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09315867A (ja) * 1996-03-29 1997-12-09 Ngk Insulators Ltd 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック
JP2002255653A (ja) * 2001-02-28 2002-09-11 Kyocera Corp 窒化アルミニウム質焼結体
JP2005045170A (ja) * 2003-07-25 2005-02-17 Tokyo Electron Ltd ガス反応装置
JP2005072321A (ja) * 2003-08-26 2005-03-17 Kyocera Corp ウェハ支持部材とその製造方法
JP2006306653A (ja) * 2005-03-30 2006-11-09 Tokuyama Corp 窒化アルミニウム焼結体及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011037691A (ja) * 2009-08-18 2011-02-24 Toshiba Corp 高熱伝導性窒化アルミニウム焼結体、これを用いた基板、回路基板、および半導体装置、ならびに高熱伝導性窒化アルミニウム焼結体の製造方法
WO2015114977A1 (ja) * 2014-01-29 2015-08-06 東京エレクトロン株式会社 基板処理装置

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TW200926268A (en) 2009-06-16
JP5624317B2 (ja) 2014-11-12
JPWO2009013984A1 (ja) 2010-09-30
TWI390609B (zh) 2013-03-21

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