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WO2012008789A3 - 그래핀의 저온 제조 방법, 및 이를 이용한 그래핀 직접 전사 방법 및 그래핀 시트 - Google Patents

그래핀의 저온 제조 방법, 및 이를 이용한 그래핀 직접 전사 방법 및 그래핀 시트 Download PDF

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Publication number
WO2012008789A3
WO2012008789A3 PCT/KR2011/005213 KR2011005213W WO2012008789A3 WO 2012008789 A3 WO2012008789 A3 WO 2012008789A3 KR 2011005213 W KR2011005213 W KR 2011005213W WO 2012008789 A3 WO2012008789 A3 WO 2012008789A3
Authority
WO
WIPO (PCT)
Prior art keywords
graphene
low temperature
same
direct transfer
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/005213
Other languages
English (en)
French (fr)
Other versions
WO2012008789A9 (ko
WO2012008789A2 (ko
Inventor
홍병희
안종현
유지범
배수강
정명희
장호욱
이영빈
김상진
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sungkyunkwan University Foundation for Corporate Collaboration
Hanwha Vision Co Ltd
Original Assignee
Samsung Techwin Co Ltd
Sungkyunkwan University Foundation for Corporate Collaboration
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Techwin Co Ltd, Sungkyunkwan University Foundation for Corporate Collaboration filed Critical Samsung Techwin Co Ltd
Priority to US13/810,144 priority Critical patent/US9371234B2/en
Priority to JP2013519605A priority patent/JP5705315B2/ja
Priority to CN201180044473.6A priority patent/CN103140439B/zh
Publication of WO2012008789A2 publication Critical patent/WO2012008789A2/ko
Publication of WO2012008789A9 publication Critical patent/WO2012008789A9/ko
Publication of WO2012008789A3 publication Critical patent/WO2012008789A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

본원은 그래핀의 저온 형성 방법, 및 이를 이용한 그래핀 직접 전사 방법 및 그래핀 시트에 관한 것으로서, 상기 그래핀의 저온 형성 방법은 기재 상에 형성된 그래핀 성장용 금속 촉매층에 탄소 소스-함유 가스를 공급하고 유도결합플라즈마 화학기상증착(ICP-CVD)에 의하여 500℃ 이하의 저온에서 그래핀을 형성하는 것을 포함할 수 있다.
PCT/KR2011/005213 2010-07-15 2011-07-15 그래핀의 저온 제조 방법, 및 이를 이용한 그래핀 직접 전사 방법 및 그래핀 시트 Ceased WO2012008789A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/810,144 US9371234B2 (en) 2010-07-15 2011-07-15 Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet
JP2013519605A JP5705315B2 (ja) 2010-07-15 2011-07-15 グラフェンの低温製造方法、及びこれを利用したグラフェンの直接転写方法
CN201180044473.6A CN103140439B (zh) 2010-07-15 2011-07-15 低温生产石墨烯的方法，直接转移用相同方法的石墨烯的方法与石墨烯片材

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20100068634 2010-07-15
KR10-2010-0068634 2010-07-15

Publications (3)

Publication Number Publication Date
WO2012008789A2 WO2012008789A2 (ko) 2012-01-19
WO2012008789A9 WO2012008789A9 (ko) 2012-04-05
WO2012008789A3 true WO2012008789A3 (ko) 2012-05-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/005213 Ceased WO2012008789A2 (ko) 2010-07-15 2011-07-15 그래핀의 저온 제조 방법, 및 이를 이용한 그래핀 직접 전사 방법 및 그래핀 시트

Country Status (5)

Country Link
US (1) US9371234B2 (ko)
JP (1) JP5705315B2 (ko)
KR (1) KR101312454B1 (ko)
CN (1) CN103140439B (ko)
WO (1) WO2012008789A2 (ko)

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KR20120007998A (ko) 2012-01-25
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