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WO2009011281A1 - ダイシング－ダイボンディングテープ及び半導体チップの製造方法 - Google Patents

ダイシング－ダイボンディングテープ及び半導体チップの製造方法 Download PDF

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Publication number
WO2009011281A1
WO2009011281A1 PCT/JP2008/062496 JP2008062496W WO2009011281A1 WO 2009011281 A1 WO2009011281 A1 WO 2009011281A1 JP 2008062496 W JP2008062496 W JP 2008062496W WO 2009011281 A1 WO2009011281 A1 WO 2009011281A1
Authority
WO
WIPO (PCT)
Prior art keywords
dicing
semiconductor chip
die bonding
cohesive
bonding tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062496
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English (en)
French (fr)
Inventor
Shota Matsuda
Kouji Watanabe
Satoshi Hayashi
Masateru Fukuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
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Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to KR1020107001095A priority Critical patent/KR101488047B1/ko
Priority to JP2008532937A priority patent/JP5286085B2/ja
Priority to CN2008800246358A priority patent/CN101772831B/zh
Publication of WO2009011281A1 publication Critical patent/WO2009011281A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/006—Presence of (meth)acrylic polymer in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/838—Bonding techniques
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)

Abstract

　半導体ウェーハをダイシングし、ダイボンディングフィルムごと半導体チップをピックアップするに際し、半導体チップを容易にかつ確実にピックアップすることができるダイシング－ダイボンディングテープを得る。 　粘接着剤層と、該粘接着剤層に積層された非粘着層とを有するダイシング－ダイボンディングテープであって、前記非粘着層が、アクリル酸エステルポリマーを主成分として含有する組成物により形成されており、半導体チップのピックアップ時の温度における、非粘着層の貯蔵弾性率が１～４００ＭＰａでありかつ破断伸度が５～１００％である。
PCT/JP2008/062496 2007-07-19 2008-07-10 ダイシング－ダイボンディングテープ及び半導体チップの製造方法 Ceased WO2009011281A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107001095A KR101488047B1 (ko) 2007-07-19 2008-07-10 다이싱-다이본딩 테이프 및 반도체 칩의 제조 방법
JP2008532937A JP5286085B2 (ja) 2007-07-19 2008-07-10 ダイシング−ダイボンディングテープ及び半導体チップの製造方法
CN2008800246358A CN101772831B (zh) 2007-07-19 2008-07-10 切割和芯片接合用带以及半导体芯片的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007188003 2007-07-19
JP2007-188003 2007-07-19

Publications (1)

Publication Number Publication Date
WO2009011281A1 true WO2009011281A1 (ja) 2009-01-22

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ID=40259617

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PCT/JP2008/062496 Ceased WO2009011281A1 (ja) 2007-07-19 2008-07-10 ダイシング－ダイボンディングテープ及び半導体チップの製造方法

Country Status (5)

Country Link
JP (1) JP5286085B2 (ja)
KR (1) KR101488047B1 (ja)
CN (1) CN101772831B (ja)
TW (1) TWI432547B (ja)
WO (1) WO2009011281A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287848A (ja) * 2009-06-15 2010-12-24 Sekisui Chem Co Ltd ダイシング−ダイボンディングテープ及び半導体チップの製造方法
JP2011023692A (ja) * 2009-06-15 2011-02-03 Sekisui Chem Co Ltd ダイシング−ダイボンディングテープ及びその製造方法、並びに半導体チップの製造方法
JP2011190354A (ja) * 2010-03-15 2011-09-29 Lintec Corp 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
WO2012032958A1 (ja) * 2010-09-06 2012-03-15 日東電工株式会社 半導体装置用フィルム、及び、半導体装置
JP2012164891A (ja) * 2011-02-08 2012-08-30 Hitachi Chem Co Ltd 半導体用粘接着シート、半導体用粘接着シートの製造方法、半導体ウエハ、半導体装置及び半導体装置の製造方法
JP2012164890A (ja) * 2011-02-08 2012-08-30 Hitachi Chem Co Ltd 半導体用粘接着シート、それを用いた半導体ウエハ、半導体装置及び半導体装置の製造方法
WO2017154619A1 (ja) * 2016-03-10 2017-09-14 リンテック株式会社 ダイシングダイボンディングシート、半導体チップの製造方法及び半導体装置の製造方法

Families Citing this family (13)

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Publication number Priority date Publication date Assignee Title
JP2011054641A (ja) * 2009-08-31 2011-03-17 Nitto Denko Corp 被切断体からのダイシング表面保護テープの剥離除去方法
EP2696352B1 (en) * 2011-04-07 2015-12-09 Lg Chem, Ltd. Silver paste composition for forming an electrode, and method for preparing same
JP2013065625A (ja) * 2011-09-15 2013-04-11 Sekisui Chem Co Ltd ダイシング−ダイボンディングテープ、粘接着剤層付き半導体チップの作製キット及び粘接着剤層付き半導体チップの製造方法
KR20130062817A (ko) * 2011-12-05 2013-06-13 제일모직주식회사 반도체 가공용 접착 테이프
JP6101492B2 (ja) * 2013-01-10 2017-03-22 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
WO2015102342A1 (ko) * 2014-01-03 2015-07-09 주식회사 엘지화학 다이싱 필름 및 다이싱 다이본딩 필름
KR101722137B1 (ko) 2014-01-03 2017-03-31 주식회사 엘지화학 다이싱 필름 및 다이싱 다이본딩 필름
WO2015122465A1 (ja) * 2014-02-14 2015-08-20 三井化学東セロ株式会社 半導体ウェハ表面保護用粘着フィルム、並びに粘着フィルムを用いる半導体ウェハの保護方法及び半導体装置の製造方法
JP2017066485A (ja) 2015-09-30 2017-04-06 日東電工株式会社 シートおよび複合シート
JP6704322B2 (ja) 2015-09-30 2020-06-03 日東電工株式会社 シートおよび複合シート
JP6721398B2 (ja) * 2016-04-22 2020-07-15 日東電工株式会社 ダイシングダイボンディングフィルム、ダイシングダイボンディングテープおよび半導体装置の製造方法
KR102884153B1 (ko) * 2020-03-27 2025-11-13 린텍 가부시키가이샤 필름형 접착제가 형성된 반도체 칩의 제조 방법

Citations (4)

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JP2002203816A (ja) * 2000-12-28 2002-07-19 Nitto Denko Corp ダイシング用粘着シート
JP2003007646A (ja) * 2001-06-18 2003-01-10 Nitto Denko Corp ダイシング用粘着シートおよび切断片の製造方法
JP2006049509A (ja) * 2004-08-03 2006-02-16 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2006165074A (ja) * 2004-12-03 2006-06-22 Sumitomo Bakelite Co Ltd ダイシングシート機能付きダイアタッチフィルム及びそれを用いた半導体装置の製造方法

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JP2726350B2 (ja) * 1992-02-24 1998-03-11 リンテック株式会社 ウェハ貼着用粘着シート
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