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WO2009078121A1 - 半導体基板支持治具及びその製造方法 - Google Patents

半導体基板支持治具及びその製造方法 Download PDF

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Publication number
WO2009078121A1
WO2009078121A1 PCT/JP2008/003209 JP2008003209W WO2009078121A1 WO 2009078121 A1 WO2009078121 A1 WO 2009078121A1 JP 2008003209 W JP2008003209 W JP 2008003209W WO 2009078121 A1 WO2009078121 A1 WO 2009078121A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
supporting jig
substrate supporting
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/003209
Other languages
English (en)
French (fr)
Inventor
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of WO2009078121A1 publication Critical patent/WO2009078121A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P72/0434—
    • H10P72/123—
    • H10P72/145—

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

　本発明は、半導体基板の熱処理を行う際に前記半導体基板を支持する半導体基板支持治具であって、前記半導体基板支持治具は、少なくとも基材と該基材の表面に薄膜が形成されたものであり、前記薄膜の材料は、前記基材の材料とは異なった材料であって、少なくとも、前記半導体基板支持治具が前記半導体基板を支持する際に接触する部分は、前記薄膜が、形成されていないものであることを特徴とする半導体基板支持治具である。これにより、アルゴン等を用いた熱処理を行う際の、シリコンウェーハへのＦｅ汚染転写と、シリコンウェーハ裏面の面荒れの両方を抑制することができる半導体基板支持治具及びその製造方法が提供される。
PCT/JP2008/003209 2007-12-19 2008-11-06 半導体基板支持治具及びその製造方法 Ceased WO2009078121A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007327128A JP4998246B2 (ja) 2007-12-19 2007-12-19 半導体基板支持治具及びその製造方法。
JP2007-327128 2007-12-19

Publications (1)

Publication Number Publication Date
WO2009078121A1 true WO2009078121A1 (ja) 2009-06-25

Family

ID=40795245

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003209 Ceased WO2009078121A1 (ja) 2007-12-19 2008-11-06 半導体基板支持治具及びその製造方法

Country Status (3)

Country Link
JP (1) JP4998246B2 (ja)
TW (1) TW200941633A (ja)
WO (1) WO2009078121A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101990533B1 (ko) * 2012-11-06 2019-09-30 주식회사 원익아이피에스 배치식 기판처리장치
CN104600020B (zh) * 2015-02-03 2018-01-26 北京七星华创电子股份有限公司 晶圆承载器、热处理装置及热处理方法
JP6322159B2 (ja) * 2015-06-10 2018-05-09 クアーズテック株式会社 ウエハボート及びその製造方法
CN105552006B (zh) * 2016-01-28 2018-06-22 北京北方华创微电子装备有限公司 一种立式热处理装置
US11133207B2 (en) * 2018-08-30 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming films on wafers separated by different distances
JP7251458B2 (ja) * 2019-12-05 2023-04-04 株式会社Sumco シリコンウェーハの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001059826A1 (fr) * 2000-02-10 2001-08-16 Shin-Etsu Handotai Co., Ltd. Nacelle de silicium a film de protection, procede de fabrication, et plaquette en silicium traitee thermiquement utilisant ladite nacelle
JP2005019748A (ja) * 2003-06-26 2005-01-20 Shin Etsu Handotai Co Ltd ウエーハの熱処理用治具及び熱処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001059826A1 (fr) * 2000-02-10 2001-08-16 Shin-Etsu Handotai Co., Ltd. Nacelle de silicium a film de protection, procede de fabrication, et plaquette en silicium traitee thermiquement utilisant ladite nacelle
JP2005019748A (ja) * 2003-06-26 2005-01-20 Shin Etsu Handotai Co Ltd ウエーハの熱処理用治具及び熱処理方法

Also Published As

Publication number Publication date
JP2009152283A (ja) 2009-07-09
JP4998246B2 (ja) 2012-08-15
TW200941633A (en) 2009-10-01

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