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WO2009078121A1 - Semiconductor substrate supporting jig and method for manufacturing the same - Google Patents

Semiconductor substrate supporting jig and method for manufacturing the same Download PDF

Info

Publication number
WO2009078121A1
WO2009078121A1 PCT/JP2008/003209 JP2008003209W WO2009078121A1 WO 2009078121 A1 WO2009078121 A1 WO 2009078121A1 JP 2008003209 W JP2008003209 W JP 2008003209W WO 2009078121 A1 WO2009078121 A1 WO 2009078121A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
supporting jig
substrate supporting
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/003209
Other languages
French (fr)
Japanese (ja)
Inventor
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of WO2009078121A1 publication Critical patent/WO2009078121A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P72/0434
    • H10P72/123
    • H10P72/145

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Provided is a semiconductor substrate supporting jig for supporting a semiconductor substrate at the time of performing heat treatment to the semiconductor substrate. The semiconductor substrate supporting jig is composed of at least a base material and a thin film formed on the surface of the base material. The material of the thin film is different from that for the base material. The thin film is not formed at least on a portion where the semiconductor substrate supporting jig is brought into contact with the semiconductor substrate at the time of supporting the semiconductor substrate. Thus, the semiconductor substrate supporting jig, which suppresses both Fe contamination transfer to the silicon wafer and roughening of the silicon wafer rear surface at the time of performing heat treatment wherein argon or the like is used, is provided. A method for manufacturing such semiconductor substrate supporting jig is also provided.
PCT/JP2008/003209 2007-12-19 2008-11-06 Semiconductor substrate supporting jig and method for manufacturing the same Ceased WO2009078121A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007327128A JP4998246B2 (en) 2007-12-19 2007-12-19 Semiconductor substrate support jig and manufacturing method thereof.
JP2007-327128 2007-12-19

Publications (1)

Publication Number Publication Date
WO2009078121A1 true WO2009078121A1 (en) 2009-06-25

Family

ID=40795245

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003209 Ceased WO2009078121A1 (en) 2007-12-19 2008-11-06 Semiconductor substrate supporting jig and method for manufacturing the same

Country Status (3)

Country Link
JP (1) JP4998246B2 (en)
TW (1) TW200941633A (en)
WO (1) WO2009078121A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101990533B1 (en) * 2012-11-06 2019-09-30 주식회사 원익아이피에스 Batch type semiconductor manufacturing device
CN104600020B (en) * 2015-02-03 2018-01-26 北京七星华创电子股份有限公司 Wafer carrier, annealing device and heat treatment method
JP6322159B2 (en) * 2015-06-10 2018-05-09 クアーズテック株式会社 Wafer boat and manufacturing method thereof
CN105552006B (en) * 2016-01-28 2018-06-22 北京北方华创微电子装备有限公司 A kind of vertical heat processing apparatus
US11133207B2 (en) * 2018-08-30 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming films on wafers separated by different distances
JP7251458B2 (en) * 2019-12-05 2023-04-04 株式会社Sumco Silicon wafer manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001059826A1 (en) * 2000-02-10 2001-08-16 Shin-Etsu Handotai Co., Ltd. Silicon boat with protective film, method of manufacture thereof, and silicon wafer heat-treated using silicon boat
JP2005019748A (en) * 2003-06-26 2005-01-20 Shin Etsu Handotai Co Ltd Thermal treatment jig and thermal treatment method for wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001059826A1 (en) * 2000-02-10 2001-08-16 Shin-Etsu Handotai Co., Ltd. Silicon boat with protective film, method of manufacture thereof, and silicon wafer heat-treated using silicon boat
JP2005019748A (en) * 2003-06-26 2005-01-20 Shin Etsu Handotai Co Ltd Thermal treatment jig and thermal treatment method for wafer

Also Published As

Publication number Publication date
JP2009152283A (en) 2009-07-09
JP4998246B2 (en) 2012-08-15
TW200941633A (en) 2009-10-01

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