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WO2009078121A1 - Dispositif de support de substrat semi-conducteur et procédé de fabrication de celui-ci - Google Patents

Dispositif de support de substrat semi-conducteur et procédé de fabrication de celui-ci Download PDF

Info

Publication number
WO2009078121A1
WO2009078121A1 PCT/JP2008/003209 JP2008003209W WO2009078121A1 WO 2009078121 A1 WO2009078121 A1 WO 2009078121A1 JP 2008003209 W JP2008003209 W JP 2008003209W WO 2009078121 A1 WO2009078121 A1 WO 2009078121A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
supporting jig
substrate supporting
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/003209
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of WO2009078121A1 publication Critical patent/WO2009078121A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
    • H01L21/67323—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un dispositif de support de substrat semi-conducteur pour supporter un substrat semi-conducteur lors de la réalisation d'un traitement thermique sur le substrat semi-conducteur. Le dispositif de support de substrat semi-conducteur est composé d'au moins un matériau de base et d'un film mince formé sur la surface du matériau de base. Le matériau du film mince est différent de celui du matériau de base. Le film mince n'est pas formé au moins sur une partie dans laquelle le dispositif de support de substrat semi-conducteur est amené en contact avec le substrat semi-conducteur au moment de supporter le substrat semi-conducteur. Donc, le dispositif de support de substrat semi-conducteur supprime le transfert de la contamination de Fe à la tranche de silicium et la rugosification de la surface arrière de la tranche de silicium lors de la réalisation du traitement thermique dans lequel de l'argon ou analogue est utilisé. Un procédé de fabrication de ce dispositif de support de substrat semi-conducteur est également fourni.
PCT/JP2008/003209 2007-12-19 2008-11-06 Dispositif de support de substrat semi-conducteur et procédé de fabrication de celui-ci Ceased WO2009078121A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007327128A JP4998246B2 (ja) 2007-12-19 2007-12-19 半導体基板支持治具及びその製造方法。
JP2007-327128 2007-12-19

Publications (1)

Publication Number Publication Date
WO2009078121A1 true WO2009078121A1 (fr) 2009-06-25

Family

ID=40795245

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003209 Ceased WO2009078121A1 (fr) 2007-12-19 2008-11-06 Dispositif de support de substrat semi-conducteur et procédé de fabrication de celui-ci

Country Status (3)

Country Link
JP (1) JP4998246B2 (fr)
TW (1) TW200941633A (fr)
WO (1) WO2009078121A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101990533B1 (ko) * 2012-11-06 2019-09-30 주식회사 원익아이피에스 배치식 기판처리장치
CN104600020B (zh) * 2015-02-03 2018-01-26 北京七星华创电子股份有限公司 晶圆承载器、热处理装置及热处理方法
JP6322159B2 (ja) * 2015-06-10 2018-05-09 クアーズテック株式会社 ウエハボート及びその製造方法
CN105552006B (zh) * 2016-01-28 2018-06-22 北京北方华创微电子装备有限公司 一种立式热处理装置
US11133207B2 (en) * 2018-08-30 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming films on wafers separated by different distances
JP7251458B2 (ja) * 2019-12-05 2023-04-04 株式会社Sumco シリコンウェーハの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001059826A1 (fr) * 2000-02-10 2001-08-16 Shin-Etsu Handotai Co., Ltd. Nacelle de silicium a film de protection, procede de fabrication, et plaquette en silicium traitee thermiquement utilisant ladite nacelle
JP2005019748A (ja) * 2003-06-26 2005-01-20 Shin Etsu Handotai Co Ltd ウエーハの熱処理用治具及び熱処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001059826A1 (fr) * 2000-02-10 2001-08-16 Shin-Etsu Handotai Co., Ltd. Nacelle de silicium a film de protection, procede de fabrication, et plaquette en silicium traitee thermiquement utilisant ladite nacelle
JP2005019748A (ja) * 2003-06-26 2005-01-20 Shin Etsu Handotai Co Ltd ウエーハの熱処理用治具及び熱処理方法

Also Published As

Publication number Publication date
JP4998246B2 (ja) 2012-08-15
TW200941633A (en) 2009-10-01
JP2009152283A (ja) 2009-07-09

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