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WO2009078069A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2009078069A1
WO2009078069A1 PCT/JP2007/074091 JP2007074091W WO2009078069A1 WO 2009078069 A1 WO2009078069 A1 WO 2009078069A1 JP 2007074091 W JP2007074091 W JP 2007074091W WO 2009078069 A1 WO2009078069 A1 WO 2009078069A1
Authority
WO
WIPO (PCT)
Prior art keywords
diffusion region
continuous diffusion
area
transistor
transistor formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/074091
Other languages
English (en)
French (fr)
Inventor
Hiroshi Katakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2009546084A priority Critical patent/JPWO2009078069A1/ja
Priority to PCT/JP2007/074091 priority patent/WO2009078069A1/ja
Priority to EP07859821A priority patent/EP2251901A4/en
Publication of WO2009078069A1 publication Critical patent/WO2009078069A1/ja
Priority to US12/794,966 priority patent/US8338864B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

　半導体基板上に形成されたＰ極性又はＮ極性のいずれかの極性を有する連続拡散領域において、連続拡散領域に形成された第１トランジスタと、連続拡散領域において、第１トランジスタが形成された領域とは異なる領域に形成された第２トランジスタと、連続拡散領域において、第１トランジスタと第２トランジスタとの間の領域に形成され、ゲート電極に一定の電位が与えられる第３トランジスタと、連続拡散領域において、第２トランジスタと第３トランジスタとの間の領域に形成され、ゲート電極に一定の電位が与えられる第４トランジスタとを備えた。
PCT/JP2007/074091 2007-12-14 2007-12-14 半導体装置 Ceased WO2009078069A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009546084A JPWO2009078069A1 (ja) 2007-12-14 2007-12-14 半導体装置
PCT/JP2007/074091 WO2009078069A1 (ja) 2007-12-14 2007-12-14 半導体装置
EP07859821A EP2251901A4 (en) 2007-12-14 2007-12-14 SEMICONDUCTOR COMPONENT
US12/794,966 US8338864B2 (en) 2007-12-14 2010-06-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/074091 WO2009078069A1 (ja) 2007-12-14 2007-12-14 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/794,966 Continuation US8338864B2 (en) 2007-12-14 2010-06-07 Semiconductor device

Publications (1)

Publication Number Publication Date
WO2009078069A1 true WO2009078069A1 (ja) 2009-06-25

Family

ID=40795196

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074091 Ceased WO2009078069A1 (ja) 2007-12-14 2007-12-14 半導体装置

Country Status (4)

Country Link
US (1) US8338864B2 (ja)
EP (1) EP2251901A4 (ja)
JP (1) JPWO2009078069A1 (ja)
WO (1) WO2009078069A1 (ja)

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JP2015537383A (ja) * 2012-11-07 2015-12-24 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造
WO2019116883A1 (ja) * 2017-12-12 2019-06-20 株式会社ソシオネクスト 半導体集積回路装置

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US7763534B2 (en) 2007-10-26 2010-07-27 Tela Innovations, Inc. Methods, structures and designs for self-aligning local interconnects used in integrated circuits
US8658542B2 (en) 2006-03-09 2014-02-25 Tela Innovations, Inc. Coarse grid design methods and structures
US9035359B2 (en) 2006-03-09 2015-05-19 Tela Innovations, Inc. Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods
US7956421B2 (en) 2008-03-13 2011-06-07 Tela Innovations, Inc. Cross-coupled transistor layouts in restricted gate level layout architecture
US9009641B2 (en) 2006-03-09 2015-04-14 Tela Innovations, Inc. Circuits with linear finfet structures
US9230910B2 (en) 2006-03-09 2016-01-05 Tela Innovations, Inc. Oversized contacts and vias in layout defined by linearly constrained topology
US8448102B2 (en) 2006-03-09 2013-05-21 Tela Innovations, Inc. Optimizing layout of irregular structures in regular layout context
US8541879B2 (en) 2007-12-13 2013-09-24 Tela Innovations, Inc. Super-self-aligned contacts and method for making the same
US7446352B2 (en) 2006-03-09 2008-11-04 Tela Innovations, Inc. Dynamic array architecture
US7908578B2 (en) 2007-08-02 2011-03-15 Tela Innovations, Inc. Methods for designing semiconductor device with dynamic array section
US8653857B2 (en) 2006-03-09 2014-02-18 Tela Innovations, Inc. Circuitry and layouts for XOR and XNOR logic
US8839175B2 (en) 2006-03-09 2014-09-16 Tela Innovations, Inc. Scalable meta-data objects
US9563733B2 (en) 2009-05-06 2017-02-07 Tela Innovations, Inc. Cell circuit and layout with linear finfet structures
US8667443B2 (en) 2007-03-05 2014-03-04 Tela Innovations, Inc. Integrated circuit cell library for multiple patterning
US8453094B2 (en) 2008-01-31 2013-05-28 Tela Innovations, Inc. Enforcement of semiconductor structure regularity for localized transistors and interconnect
US7939443B2 (en) 2008-03-27 2011-05-10 Tela Innovations, Inc. Methods for multi-wire routing and apparatus implementing same
KR101761530B1 (ko) 2008-07-16 2017-07-25 텔라 이노베이션스, 인코포레이티드 동적 어레이 아키텍쳐에서의 셀 페이징과 배치를 위한 방법 및 그 구현
US9122832B2 (en) 2008-08-01 2015-09-01 Tela Innovations, Inc. Methods for controlling microloading variation in semiconductor wafer layout and fabrication
US8332794B2 (en) * 2009-01-22 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Circuits and methods for programmable transistor array
US8661392B2 (en) 2009-10-13 2014-02-25 Tela Innovations, Inc. Methods for cell boundary encroachment and layouts implementing the Same
JP2011242541A (ja) * 2010-05-17 2011-12-01 Panasonic Corp 半導体集積回路装置、および標準セルの端子構造
JP5531848B2 (ja) * 2010-08-06 2014-06-25 富士通セミコンダクター株式会社 半導体装置、半導体集積回路装置、ＳＲＡＭ、Ｄｔ−ＭＯＳトランジスタの製造方法
US9159627B2 (en) 2010-11-12 2015-10-13 Tela Innovations, Inc. Methods for linewidth modification and apparatus implementing the same
JP5695734B2 (ja) * 2011-03-04 2015-04-08 ルネサスエレクトロニクス株式会社 半導体装置
US9767058B2 (en) * 2011-11-17 2017-09-19 Futurewei Technologies, Inc. Method and apparatus for scalable low latency solid state drive interface
US20140246725A1 (en) * 2013-03-04 2014-09-04 Samsung Electronics Co., Ltd. Integrated Circuit Memory Devices Including Parallel Patterns in Adjacent Regions
US9190405B2 (en) 2014-01-31 2015-11-17 Qualcomm Incorporated Digital circuit design with semi-continuous diffusion standard cell
US9318476B2 (en) * 2014-03-03 2016-04-19 Qualcomm Incorporated High performance standard cell with continuous oxide definition and characterized leakage current
US10361195B2 (en) 2014-09-04 2019-07-23 Samsung Electronics Co., Ltd. Semiconductor device with an isolation gate and method of forming
US10692808B2 (en) 2017-09-18 2020-06-23 Qualcomm Incorporated High performance cell design in a technology with high density metal routing

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JP2007036194A (ja) * 2005-07-26 2007-02-08 Taiwan Semiconductor Manufacturing Co Ltd デバイス性能の不整合低減方法および半導体回路
JP2007311491A (ja) * 2006-05-17 2007-11-29 Toshiba Corp 半導体集積回路

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015537383A (ja) * 2012-11-07 2015-12-24 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造
WO2019116883A1 (ja) * 2017-12-12 2019-06-20 株式会社ソシオネクスト 半導体集積回路装置
JPWO2019116883A1 (ja) * 2017-12-12 2020-12-03 株式会社ソシオネクスト 半導体集積回路装置
US11342412B2 (en) 2017-12-12 2022-05-24 Socionext Inc. Semiconductor integrated circuit device
JP7174263B2 (ja) 2017-12-12 2022-11-17 株式会社ソシオネクスト 半導体集積回路装置

Also Published As

Publication number Publication date
US8338864B2 (en) 2012-12-25
US20100244142A1 (en) 2010-09-30
EP2251901A4 (en) 2012-08-29
EP2251901A1 (en) 2010-11-17
JPWO2009078069A1 (ja) 2011-04-28

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