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WO2009066466A1 - 窒化物半導体および窒化物半導体の結晶成長方法ならびに窒化物半導体発光素子 - Google Patents

窒化物半導体および窒化物半導体の結晶成長方法ならびに窒化物半導体発光素子 Download PDF

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Publication number
WO2009066466A1
WO2009066466A1 PCT/JP2008/003425 JP2008003425W WO2009066466A1 WO 2009066466 A1 WO2009066466 A1 WO 2009066466A1 JP 2008003425 W JP2008003425 W JP 2008003425W WO 2009066466 A1 WO2009066466 A1 WO 2009066466A1
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nitride semiconductor
nitride
growth
substrate
face
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Ceased
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PCT/JP2008/003425
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English (en)
French (fr)
Inventor
Hideyoshi Horie
Kaori Kurihara
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Priority to KR1020107009100A priority Critical patent/KR101502195B1/ko
Priority to EP08852819.5A priority patent/EP2221856B1/en
Priority to US12/744,163 priority patent/US8652948B2/en
Publication of WO2009066466A1 publication Critical patent/WO2009066466A1/ja
Anticipated expiration legal-status Critical
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02436—Intermediate layers between substrates and deposited layers
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    • H01L21/02455—Group 13/15 materials
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    • H10H20/01—Manufacture or treatment
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
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  • Crystals, And After-Treatments Of Crystals (AREA)
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Abstract

　ｍ面のような非極性面の窒化物基体上に窒化物半導体を結晶成長させるに際し、窒化物半導体層を成長させる前の比較的高温領域での昇温過程におけるメインフローを構成するガス（基体の窒化物主面が暴露される雰囲気）、第１および第２の窒化物半導体層成長完了までのメインフローを構成するガス（基体の窒化物主面が暴露される雰囲気）を、窒化物に対してエッチング効果のないものを主とし、かつ、窒化物半導体層の成長開始時にはＳｉ源を供給しないこととした。このため、エピタキシャル基体の窒化物表面近傍からの窒素原子の脱離が生じず、エピタキシャル膜への欠陥導入が抑制される。また、平坦性に優れた表面モルフォロジを有するエピタキシャル成長が可能となる。
PCT/JP2008/003425 2007-11-21 2008-11-20 窒化物半導体および窒化物半導体の結晶成長方法ならびに窒化物半導体発光素子 Ceased WO2009066466A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107009100A KR101502195B1 (ko) 2007-11-21 2008-11-20 질화물 반도체 및 질화물 반도체의 결정 성장 방법 그리고 질화물 반도체 발광 소자
EP08852819.5A EP2221856B1 (en) 2007-11-21 2008-11-20 Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
US12/744,163 US8652948B2 (en) 2007-11-21 2008-11-20 Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007301565 2007-11-21
JP2007-301565 2007-11-21
JP2008057694 2008-03-07
JP2008-057694 2008-03-07

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WO2009066466A1 true WO2009066466A1 (ja) 2009-05-28

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US (1) US8652948B2 (ja)
EP (1) EP2221856B1 (ja)
JP (3) JP5589278B2 (ja)
KR (1) KR101502195B1 (ja)
TW (1) TWI490921B (ja)
WO (1) WO2009066466A1 (ja)

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WO2010100699A1 (ja) * 2009-03-06 2010-09-10 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
US20100243988A1 (en) * 2009-03-27 2010-09-30 Sharp Kabushiki Kaishsa Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device
WO2010146808A1 (ja) * 2009-06-18 2010-12-23 パナソニック株式会社 窒化ガリウム系化合物半導体発光ダイオード
US20110073892A1 (en) * 2009-09-30 2011-03-31 Sumitomo Electric Industries, Ltd. Light emitting device
WO2011070760A1 (ja) * 2009-12-09 2011-06-16 パナソニック株式会社 半導体素子の製造方法
US20120049156A1 (en) * 2010-08-26 2012-03-01 Sharp Kabushiki Kaisha Nitride semiconductor device and semiconductor optical device
US8268706B2 (en) 2009-04-08 2012-09-18 Panasonic Corporation Semiconductor device manufacturing method
US8624220B2 (en) 2008-11-20 2014-01-07 Mitsubishi Chemical Corporation Nitride semiconductor

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