[go: up one dir, main page]

WO2009072631A1 - 窒化物半導体素子の製造方法および窒化物半導体素子 - Google Patents

窒化物半導体素子の製造方法および窒化物半導体素子 Download PDF

Info

Publication number
WO2009072631A1
WO2009072631A1 PCT/JP2008/072203 JP2008072203W WO2009072631A1 WO 2009072631 A1 WO2009072631 A1 WO 2009072631A1 JP 2008072203 W JP2008072203 W JP 2008072203W WO 2009072631 A1 WO2009072631 A1 WO 2009072631A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor element
nitride semiconductor
mask
manufacturing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/072203
Other languages
English (en)
French (fr)
Inventor
Yukio Shakuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of WO2009072631A1 publication Critical patent/WO2009072631A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H10P14/271—
    • H10P14/2921—
    • H10P14/3216—
    • H10P14/3416—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H10P14/24—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　バッファ層を用いて選択成長により窒化物半導体素子を形成する場合に、結晶品質の高い窒化物半導体素子を作製することができる窒化物半導体素子の製造方法および窒化物半導体素子を提供する。 　成長用基板１上に選択成長用マスク１１を形成し、選択成長用マスク１１の一部を除去して所定形状にパターニングした後、ＡｌＮバッファ層２を温度９００°C以上で結晶成長させるので、成長用基板１上に残っている選択成長用マスク１１上にはＡｌＮバッファ層２は形成されずに、成長用基板１の露出した面に形成される。
PCT/JP2008/072203 2007-12-05 2008-12-05 窒化物半導体素子の製造方法および窒化物半導体素子 Ceased WO2009072631A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007315205 2007-12-05
JP2007-315205 2007-12-05

Publications (1)

Publication Number Publication Date
WO2009072631A1 true WO2009072631A1 (ja) 2009-06-11

Family

ID=40717809

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072203 Ceased WO2009072631A1 (ja) 2007-12-05 2008-12-05 窒化物半導体素子の製造方法および窒化物半導体素子

Country Status (1)

Country Link
WO (1) WO2009072631A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012111884A1 (en) * 2011-02-16 2012-08-23 Seoul Opto Device Co., Ltd. Laminate substrate and method of fabricating the same
WO2014064395A1 (fr) * 2012-10-26 2014-05-01 Aledia Dispositif optoelectronique et son procede de fabrication
WO2014064276A1 (en) * 2012-10-26 2014-05-01 Aledia Optoelectric device and method for manufacturing the same
WO2014184487A1 (fr) * 2013-05-14 2014-11-20 Aledia Dispositif optoelectronique et son procede de fabrication
WO2014184486A1 (fr) * 2013-05-14 2014-11-20 Aledia Dispositif optoélectronique et son procédé de fabrication
US9679966B2 (en) 2012-10-26 2017-06-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US9698011B2 (en) 2012-10-26 2017-07-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
WO2022210401A1 (ja) * 2021-03-31 2022-10-06 株式会社ジャパンディスプレイ 積層構造体

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021789A (ja) * 1997-08-29 2000-01-21 Toshiba Corp 窒化物系半導体素子、発光素子及びその製造方法
JP2001007449A (ja) * 1999-06-25 2001-01-12 Fuji Electric Co Ltd Ｉｉｉ族窒化物半導体薄膜とその製造方法
JP2002164292A (ja) * 2000-11-29 2002-06-07 Sumitomo Chem Co Ltd 化合物半導体基板およびその製造方法
JP2003158296A (ja) * 2001-11-22 2003-05-30 Sharp Corp 窒化物半導体発光デバイスチップとその製造方法
JP2004002081A (ja) * 2002-05-30 2004-01-08 Namiki Precision Jewel Co Ltd パターニングサファイヤ基板
JP2006316308A (ja) * 2005-05-11 2006-11-24 Furukawa Co Ltd Ｉｉｉ族窒化物半導体層の形成方法、ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置
JP2007254258A (ja) * 2005-06-06 2007-10-04 Sumitomo Electric Ind Ltd 窒化物半導体基板とその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021789A (ja) * 1997-08-29 2000-01-21 Toshiba Corp 窒化物系半導体素子、発光素子及びその製造方法
JP2001007449A (ja) * 1999-06-25 2001-01-12 Fuji Electric Co Ltd Ｉｉｉ族窒化物半導体薄膜とその製造方法
JP2002164292A (ja) * 2000-11-29 2002-06-07 Sumitomo Chem Co Ltd 化合物半導体基板およびその製造方法
JP2003158296A (ja) * 2001-11-22 2003-05-30 Sharp Corp 窒化物半導体発光デバイスチップとその製造方法
JP2004002081A (ja) * 2002-05-30 2004-01-08 Namiki Precision Jewel Co Ltd パターニングサファイヤ基板
JP2006316308A (ja) * 2005-05-11 2006-11-24 Furukawa Co Ltd Ｉｉｉ族窒化物半導体層の形成方法、ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板
JP2007254258A (ja) * 2005-06-06 2007-10-04 Sumitomo Electric Ind Ltd 窒化物半導体基板とその製造方法
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957426B2 (en) 2011-02-16 2015-02-17 Seoul Viosys Co., Ltd. Laminate substrate and method of fabricating the same
KR20120094406A (ko) * 2011-02-16 2012-08-24 서울옵토디바이스주식회사 적층 기판 및 그 제조 방법
JP2012166995A (ja) * 2011-02-16 2012-09-06 Seoul Opto Devices Co Ltd 積層基板及びその製造方法
KR101909737B1 (ko) * 2011-02-16 2018-10-18 서울바이오시스 주식회사 적층 기판 및 그 제조 방법
WO2012111884A1 (en) * 2011-02-16 2012-08-23 Seoul Opto Device Co., Ltd. Laminate substrate and method of fabricating the same
US9331242B2 (en) 2012-10-26 2016-05-03 Aledia Optoelectronic device and method for manufacturing same
US9698011B2 (en) 2012-10-26 2017-07-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
US10636653B2 (en) 2012-10-26 2020-04-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
WO2014064395A1 (fr) * 2012-10-26 2014-05-01 Aledia Dispositif optoelectronique et son procede de fabrication
FR2997552A1 (fr) * 2012-10-26 2014-05-02 Aledia Dispositif optoelectronique et son procede de fabrication
WO2014064276A1 (en) * 2012-10-26 2014-05-01 Aledia Optoelectric device and method for manufacturing the same
US9991342B2 (en) 2012-10-26 2018-06-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US9537044B2 (en) 2012-10-26 2017-01-03 Aledia Optoelectric device and method for manufacturing the same
US9679966B2 (en) 2012-10-26 2017-06-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US9728679B2 (en) 2012-10-26 2017-08-08 Aledia Optoelectronic device and method for manufacturing same
WO2014184487A1 (fr) * 2013-05-14 2014-11-20 Aledia Dispositif optoelectronique et son procede de fabrication
US9537050B2 (en) 2013-05-14 2017-01-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optoelectronic device and method for manufacturing same
US10050080B2 (en) 2013-05-14 2018-08-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optoelectronic device and method for manufacturing same
FR3005785A1 (fr) * 2013-05-14 2014-11-21 Aledia Dispositif optoelectronique et son procede de fabrication
WO2014184486A1 (fr) * 2013-05-14 2014-11-20 Aledia Dispositif optoélectronique et son procédé de fabrication
WO2022210401A1 (ja) * 2021-03-31 2022-10-06 株式会社ジャパンディスプレイ 積層構造体
JPWO2022210401A1 (ja) * 2021-03-31 2022-10-06
JP7624061B2 (ja) 2021-03-31 2025-01-29 株式会社ジャパンディスプレイ 積層構造体

Similar Documents

Publication Publication Date Title
WO2009072631A1 (ja) 窒化物半導体素子の製造方法および窒化物半導体素子
WO2007098215A8 (en) Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
WO2006113539A3 (en) Semiconductor devices having gallium nitride epilayers on diamond substrates
TW200729343A (en) Method for fabricating controlled stress silicon nitride films
WO2009057655A1 (ja) 半導体発光素子およびその製造方法
WO2008011688A3 (en) GROWTH OF MONOCRYSTALLINE GeN ON A SUBSTRATE
WO2010065249A3 (en) Methods of fabricating substrates
TWI367544B (en) Gan donor substrate with a n surface and a ga surface
WO2003025263A1 (en) Nitride semiconductor substrate, its manufacturing method, and semiconductor optical device using the same
WO2008051503A3 (en) Light-emitter-based devices with lattice-mismatched semiconductor structures
TW200741043A (en) GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device
TW200733194A (en) Method for the manufacture of substrates, in particular for the optical, electronic or optoelectronic areas, and the substrate obtained in accordance with the said method
WO2006095566A8 (en) Nitride semiconductor light-emitting device and method for fabrication thereof
WO2005091370A8 (en) Method for manufacturing integrated circuit
WO2008152945A1 (ja) 半導体発光装置及びその製造方法
WO2011025149A3 (ko) 반도체 기판 제조 방법 및 발광 소자 제조 방법
WO2007025062A3 (en) Photovoltaic template
WO2007124209A3 (en) Stressor integration and method thereof
TW200701335A (en) Nitride semiconductor device and manufacturing mathod thereof
WO2011025291A3 (ko) 요철 패턴 기판 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
WO2008099246A3 (en) Multilayer structure and its fabrication process
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
TW200735348A (en) Semiconductor heterostructure and method for forming a semiconductor heterostructure
WO2010059419A3 (en) Method of forming a semiconductor layer
TW200703716A (en) Nitride semiconductor element and its fabrication process

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08856661

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08856661

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP