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WO2009066464A1 - 窒化物半導体および窒化物半導体の結晶成長方法 - Google Patents

窒化物半導体および窒化物半導体の結晶成長方法 Download PDF

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Publication number
WO2009066464A1
WO2009066464A1 PCT/JP2008/003423 JP2008003423W WO2009066464A1 WO 2009066464 A1 WO2009066464 A1 WO 2009066464A1 JP 2008003423 W JP2008003423 W JP 2008003423W WO 2009066464 A1 WO2009066464 A1 WO 2009066464A1
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Prior art keywords
nitride semiconductor
substrate
semiconductor layer
nitride
gas
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Ceased
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PCT/JP2008/003423
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English (en)
French (fr)
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WO2009066464A9 (ja
Inventor
Hideyoshi Horie
Kaori Kurihara
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Priority to KR1020107009101A priority Critical patent/KR101495381B1/ko
Priority to US12/744,076 priority patent/US9048100B2/en
Priority to EP08851532.5A priority patent/EP2221855A4/en
Publication of WO2009066464A1 publication Critical patent/WO2009066464A1/ja
Anticipated expiration legal-status Critical
Publication of WO2009066464A9 publication Critical patent/WO2009066464A9/ja
Priority to US14/328,997 priority patent/US20140318441A1/en
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H10P14/24—
    • H10P14/2901—
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Abstract

　エピタキシャル成長用の基体として、少なくとも一方の主面が窒化物である基体を準備し、この基体を、エピタキシャル成長用反応炉内のサセプタ上に載置して所定の温度まで昇温する（工程Ａ）。このとき、反応炉内に不活性ガスである窒素ガスを供給しながら昇温を開始し、活性ガスであるＮＨ３ガスの供給を行う。続いて、基体の窒化物主面を熱的にクリーニングする工程を設けずに、第１の窒化物半導体層の成長工程（工程Ｂ）に移行する。この工程Ｂでは、基体の窒化物主面上にＳｉ原料が供給されない環境下で第１の窒化物半導体層がエピタキシャル成長される。そして、この第１の窒化物半導体層の上に、ｎ型ドーパント原料を供給しながら、比較的厚い層である第２の窒化物半導体層をエピタキシャル成長させる（工程Ｃ）。
PCT/JP2008/003423 2007-11-21 2008-11-20 窒化物半導体および窒化物半導体の結晶成長方法 Ceased WO2009066464A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020107009101A KR101495381B1 (ko) 2007-11-21 2008-11-20 질화물 반도체의 결정 성장 방법
US12/744,076 US9048100B2 (en) 2007-11-21 2008-11-20 Nitride semiconductor and nitride semiconductor crystal growth method
EP08851532.5A EP2221855A4 (en) 2007-11-21 2008-11-20 NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR CRYSTAL GROWTH PROCESS
US14/328,997 US20140318441A1 (en) 2007-11-21 2014-07-11 Nitride semiconductor and nitride semiconductor crystal growth method

Applications Claiming Priority (2)

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JP2007-301555 2007-11-21
JP2007301555 2007-11-21

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US12/744,076 A-371-Of-International US9048100B2 (en) 2007-11-21 2008-11-20 Nitride semiconductor and nitride semiconductor crystal growth method
US14/328,997 Division US20140318441A1 (en) 2007-11-21 2014-07-11 Nitride semiconductor and nitride semiconductor crystal growth method

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WO2009066464A1 true WO2009066464A1 (ja) 2009-05-28
WO2009066464A9 WO2009066464A9 (ja) 2010-06-24

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US (2) US9048100B2 (ja)
EP (1) EP2221855A4 (ja)
JP (3) JP5391661B2 (ja)
KR (1) KR101495381B1 (ja)
TW (1) TWI431669B (ja)
WO (1) WO2009066464A1 (ja)

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CN102637723A (zh) * 2012-03-28 2012-08-15 华为技术有限公司 GaN衬底、半导体器件及其制作方法
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JP2014183112A (ja) * 2013-03-18 2014-09-29 Stanley Electric Co Ltd 半導体発光素子の製造方法
KR102188493B1 (ko) 2014-04-25 2020-12-09 삼성전자주식회사 질화물 단결정 성장방법 및 질화물 반도체 소자 제조방법
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JP6582736B2 (ja) * 2015-08-25 2019-10-02 富士電機株式会社 窒化物半導体装置の製造方法
JP6714841B2 (ja) * 2016-05-18 2020-07-01 富士電機株式会社 窒化物半導体装置の製造方法
KR20190078654A (ko) * 2016-11-25 2019-07-04 오사카 유니버시티 질화물 반도체 기판과 그 제조방법 및 반도체 디바이스
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JP7101347B2 (ja) * 2019-12-27 2022-07-15 日亜化学工業株式会社 発光素子の製造方法
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8624220B2 (en) 2008-11-20 2014-01-07 Mitsubishi Chemical Corporation Nitride semiconductor
US9711681B2 (en) 2008-11-20 2017-07-18 Mitsubishi Chemical Corporation Nitride semiconductor
JP7448626B1 (ja) 2022-12-23 2024-03-12 日機装株式会社 窒化物半導体発光素子の製造方法

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EP2221855A4 (en) 2013-08-07
EP2221855A1 (en) 2010-08-25
WO2009066464A9 (ja) 2010-06-24
JP2014033205A (ja) 2014-02-20
JP2016154237A (ja) 2016-08-25
TWI431669B (zh) 2014-03-21
US20140318441A1 (en) 2014-10-30
KR101495381B1 (ko) 2015-02-24
JP5391661B2 (ja) 2014-01-15
US20100252835A1 (en) 2010-10-07
US9048100B2 (en) 2015-06-02
TW200939311A (en) 2009-09-16
KR20100086988A (ko) 2010-08-02
JP2009147319A (ja) 2009-07-02
JP6179624B2 (ja) 2017-08-16

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