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WO2009057655A1 - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法 Download PDF

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Publication number
WO2009057655A1
WO2009057655A1 PCT/JP2008/069682 JP2008069682W WO2009057655A1 WO 2009057655 A1 WO2009057655 A1 WO 2009057655A1 JP 2008069682 W JP2008069682 W JP 2008069682W WO 2009057655 A1 WO2009057655 A1 WO 2009057655A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting element
layer
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/069682
Other languages
English (en)
French (fr)
Inventor
Hideyoshi Horie
Hirohiko Hirasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to US12/740,481 priority Critical patent/US20100308357A1/en
Priority to EP08844428A priority patent/EP2221884A1/en
Publication of WO2009057655A1 publication Critical patent/WO2009057655A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

　発光素子１０は、バッファ層２２、第一導電型半導体層、活性構造２５および第二導電型半導体層を含む薄膜結晶層を有している。薄膜結晶層は、少なくとも第二導電型半導体層の一部が絶縁膜で覆われている。絶縁膜は、薄膜結晶層の結晶性を回復させる結晶品質改善層３０を有する。
PCT/JP2008/069682 2007-10-29 2008-10-29 半導体発光素子およびその製造方法 Ceased WO2009057655A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/740,481 US20100308357A1 (en) 2007-10-29 2008-10-29 Semiconductor light emitting element and method for manufacturing the same
EP08844428A EP2221884A1 (en) 2007-10-29 2008-10-29 Semiconductor light emitting element and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007280229 2007-10-29
JP2007-280229 2007-10-29

Publications (1)

Publication Number Publication Date
WO2009057655A1 true WO2009057655A1 (ja) 2009-05-07

Family

ID=40591044

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069682 Ceased WO2009057655A1 (ja) 2007-10-29 2008-10-29 半導体発光素子およびその製造方法

Country Status (4)

Country Link
US (1) US20100308357A1 (ja)
EP (1) EP2221884A1 (ja)
JP (1) JP2009135466A (ja)
WO (1) WO2009057655A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110186872A1 (en) * 2010-02-04 2011-08-04 Lg Innotek Co., Ltd. Light Emitting Device Package, Method Of Manufacturing The Same, And Lighting System
US20110284822A1 (en) * 2010-05-18 2011-11-24 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

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KR101497953B1 (ko) 2008-10-01 2015-03-05 삼성전자 주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
US20110156048A1 (en) 2008-11-06 2011-06-30 Toshiya Yokogawa Nitride-based semiconductor device and method for fabricating the same
JP4676577B2 (ja) * 2009-04-06 2011-04-27 パナソニック株式会社 窒化物系半導体素子およびその製造方法
US9048385B2 (en) 2009-06-24 2015-06-02 Nichia Corporation Nitride semiconductor light emitting diode
KR101171722B1 (ko) * 2009-12-25 2012-08-06 파나소닉 주식회사 질화물계 반도체 소자 및 그의 제조방법
KR101028286B1 (ko) * 2009-12-28 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2011233784A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
US8765509B2 (en) 2010-09-30 2014-07-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor light-emitting device
JP5246235B2 (ja) * 2010-09-30 2013-07-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
KR101224282B1 (ko) 2011-03-04 2013-01-21 주식회사 엘지화학 전도성 구조체 및 이의 제조방법
JP5746553B2 (ja) * 2011-04-28 2015-07-08 株式会社東芝 基板加工システム、および基板加工プログラム
JP6221926B2 (ja) * 2013-05-17 2017-11-01 日亜化学工業株式会社 半導体発光素子およびその製造方法
JP6215612B2 (ja) * 2013-08-07 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 発光素子、発光素子ウェーハ及び電子機器
KR20150039518A (ko) * 2013-10-02 2015-04-10 엘지이노텍 주식회사 발광소자
CN104064654B (zh) * 2014-06-18 2017-07-11 工业和信息化部电子第五研究所 形成芯片的钝化膜的方法、芯片的钝化膜的结构及芯片
CN106299084B (zh) * 2016-08-30 2018-10-16 开发晶照明（厦门）有限公司 Led封装结构
US10886435B2 (en) * 2017-11-16 2021-01-05 Panasonic Corporation Group III nitride semiconductor with InGaN diffusion blocking layer
CN116169224A (zh) * 2020-03-06 2023-05-26 天津三安光电有限公司 一种倒装发光二极管
KR20230099727A (ko) 2021-12-27 2023-07-05 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
CN118352444A (zh) * 2024-06-17 2024-07-16 山东中清智能科技股份有限公司 一种led芯片的制备方法及led芯片

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164938A (ja) 1998-11-27 2000-06-16 Sharp Corp 発光装置及び発光素子の実装方法
JP2000332357A (ja) * 1999-05-20 2000-11-30 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP2002344015A (ja) 2001-05-17 2002-11-29 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP3423328B2 (ja) 1991-12-09 2003-07-07 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP2005244245A (ja) * 2004-02-27 2005-09-08 Osram Opto Semiconductors Gmbh 発光半導体チップおよびこの種の半導体チップの製造方法
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
WO2006043796A1 (en) * 2004-10-22 2006-04-27 Seoul Opto-Device Co., Ltd. Gan compound semiconductor light emitting element and method of manufacturing the same
JP2006229172A (ja) * 2005-02-21 2006-08-31 Toshiba Corp 窒化物半導体レーザ装置及びその製造方法
JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
JP2008130595A (ja) * 2006-11-16 2008-06-05 Sharp Corp 窒化物半導体レーザ素子

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3423328B2 (ja) 1991-12-09 2003-07-07 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP2000164938A (ja) 1998-11-27 2000-06-16 Sharp Corp 発光装置及び発光素子の実装方法
JP2000332357A (ja) * 1999-05-20 2000-11-30 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP2002344015A (ja) 2001-05-17 2002-11-29 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2005244245A (ja) * 2004-02-27 2005-09-08 Osram Opto Semiconductors Gmbh 発光半導体チップおよびこの種の半導体チップの製造方法
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
WO2006043796A1 (en) * 2004-10-22 2006-04-27 Seoul Opto-Device Co., Ltd. Gan compound semiconductor light emitting element and method of manufacturing the same
JP2006229172A (ja) * 2005-02-21 2006-08-31 Toshiba Corp 窒化物半導体レーザ装置及びその製造方法
JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
JP2008130595A (ja) * 2006-11-16 2008-06-05 Sharp Corp 窒化物半導体レーザ素子

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110186872A1 (en) * 2010-02-04 2011-08-04 Lg Innotek Co., Ltd. Light Emitting Device Package, Method Of Manufacturing The Same, And Lighting System
CN102148318A (zh) * 2010-02-04 2011-08-10 Lg伊诺特有限公司 发光器件封装及其制造方法、以及照明系统
US8637893B2 (en) 2010-02-04 2014-01-28 Lg Innotek Co., Ltd. Light emitting device package, method of manufacturing the same, and lighting system
US20110284822A1 (en) * 2010-05-18 2011-11-24 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
US8664635B2 (en) * 2010-05-18 2014-03-04 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
US9419186B2 (en) 2010-05-18 2016-08-16 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
US9793448B2 (en) 2010-05-18 2017-10-17 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
US10043955B2 (en) 2010-05-18 2018-08-07 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

Also Published As

Publication number Publication date
EP2221884A1 (en) 2010-08-25
US20100308357A1 (en) 2010-12-09
JP2009135466A (ja) 2009-06-18

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