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WO2009057620A1 - 圧力センサ及びその製造方法 - Google Patents

圧力センサ及びその製造方法 Download PDF

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Publication number
WO2009057620A1
WO2009057620A1 PCT/JP2008/069612 JP2008069612W WO2009057620A1 WO 2009057620 A1 WO2009057620 A1 WO 2009057620A1 JP 2008069612 W JP2008069612 W JP 2008069612W WO 2009057620 A1 WO2009057620 A1 WO 2009057620A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
pressure sensor
manufacturing
same
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/069612
Other languages
English (en)
French (fr)
Inventor
Tomohisa Tokuda
Hirofumi Tojo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Azbil Corp
Original Assignee
Azbil Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007281989A external-priority patent/JP2009111164A/ja
Priority claimed from JP2007281988A external-priority patent/JP2009109347A/ja
Application filed by Azbil Corp filed Critical Azbil Corp
Priority to KR1020107008751A priority Critical patent/KR101178989B1/ko
Priority to CN200880113988.5A priority patent/CN101960276B/zh
Priority to US12/740,467 priority patent/US20100314701A1/en
Publication of WO2009057620A1 publication Critical patent/WO2009057620A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

　本発明における圧力センサは、第１の半導体層１と、感圧領域がダイアフラムとなる第２の半導体層３を備えたセンサチップを有する圧力センサであって、感圧領域において、第１の半導体層１に開口部が形成され、感圧領域の第２の半導体層３に、凹部が形成され、第２の半導体層３の凹部が、第１の半導体層１の開口部よりも大きくなっているものである。また、第１の半導体層１と、第２の半導体層３との間に絶縁層２が設けられていてもよい。
PCT/JP2008/069612 2007-10-30 2008-10-29 圧力センサ及びその製造方法 Ceased WO2009057620A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107008751A KR101178989B1 (ko) 2007-10-30 2008-10-29 압력 센서 및 그 제조 방법
CN200880113988.5A CN101960276B (zh) 2007-10-30 2008-10-29 压力传感器及其制造方法
US12/740,467 US20100314701A1 (en) 2007-10-30 2008-10-29 Pressure sensor and manufacturing method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007281989A JP2009111164A (ja) 2007-10-30 2007-10-30 圧力センサ及びその製造方法
JP2007-281989 2007-10-30
JP2007-281988 2007-10-30
JP2007281988A JP2009109347A (ja) 2007-10-30 2007-10-30 圧力センサ及びその製造方法

Publications (1)

Publication Number Publication Date
WO2009057620A1 true WO2009057620A1 (ja) 2009-05-07

Family

ID=40591009

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069612 Ceased WO2009057620A1 (ja) 2007-10-30 2008-10-29 圧力センサ及びその製造方法

Country Status (4)

Country Link
US (1) US20100314701A1 (ja)
KR (1) KR101178989B1 (ja)
CN (1) CN101960276B (ja)
WO (1) WO2009057620A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2516980A1 (en) * 2009-12-23 2012-10-31 Epcos AG Piezoresistive pressure sensor and process for producing a piezoresistive pressure sensor
CN114136527A (zh) * 2021-11-29 2022-03-04 浙江吉利控股集团有限公司 敏感元件和车辆

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5286153B2 (ja) * 2009-04-28 2013-09-11 アズビル株式会社 圧力センサの製造方法
EP2535035B1 (en) 2010-06-09 2015-04-01 JVM Co., Ltd. Medicine dispenser and method of discharging medicine
US8435821B2 (en) * 2010-06-18 2013-05-07 General Electric Company Sensor and method for fabricating the same
JP6340985B2 (ja) * 2014-08-12 2018-06-13 セイコーエプソン株式会社 物理量センサー、圧力センサー、高度計、電子機器および移動体
JP2016095284A (ja) * 2014-11-17 2016-05-26 セイコーエプソン株式会社 電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体
US9804046B2 (en) 2015-10-27 2017-10-31 DunAn Sensing, LLC Pressure sensor with support structure for non-silicon diaphragm
US10548492B2 (en) * 2016-12-08 2020-02-04 MEAS Switzerland S.a.r.l. Pressure sensor
CN114894371A (zh) * 2022-05-09 2022-08-12 厦门乃尔电子有限公司 一种差压芯体

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252952U (ja) * 1985-09-24 1987-04-02
JPH0254137A (ja) * 1988-08-17 1990-02-23 Toshiba Corp 半導体圧力センサー
JPH07503815A (ja) * 1992-12-05 1995-04-20 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング ケイ素の異方性エッチング法
JPH08250466A (ja) * 1995-02-24 1996-09-27 Internatl Business Mach Corp <Ibm> シリコン基板に深くて垂直な構造を作製する方法
JP2002208708A (ja) * 2001-01-11 2002-07-26 Denso Corp 半導体圧力センサおよびその製造方法
JP2002277337A (ja) * 2001-03-22 2002-09-25 Yamatake Corp 差圧・圧力センサ
JP2007147374A (ja) * 2005-11-25 2007-06-14 Mitsubishi Electric Corp 圧力センサ

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921495B2 (ja) * 1977-12-15 1984-05-21 株式会社豊田中央研究所 細管型圧力計
EP0140992B1 (de) * 1983-11-10 1988-05-25 Kristal Instrumente AG Wandlerelement, Verfahren zu seiner Herstellung sowie Verwendung für einen Druckaufnehmer
JPS6259828A (ja) * 1985-09-11 1987-03-16 Fuji Electric Co Ltd 静電容量式圧力センサ
JPH1038734A (ja) * 1996-07-19 1998-02-13 Omron Corp 静電容量型圧力センサ及びその製造方法並びにそのセンサを用いた血圧計
JPH11248578A (ja) 1998-03-05 1999-09-17 Omron Corp 静電容量型圧力センサ及びそのパッケージ構造
JP2000162069A (ja) * 1998-11-26 2000-06-16 Mitsubishi Electric Corp 半導体圧力センサ
WO2003079461A1 (en) * 2002-03-15 2003-09-25 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Electro-active device using radial electric field piezo-diaphragm for sonic applications
KR20060034223A (ko) * 2003-05-26 2006-04-21 센스팝 피티이 리미티드 실리콘 마이크로폰의 제조 방법
JP4511844B2 (ja) * 2004-02-05 2010-07-28 横河電機株式会社 圧力センサ及び圧力センサの製造方法
DE102004051468A1 (de) * 2004-10-22 2006-04-27 Robert Bosch Gmbh Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung
DE102005004877A1 (de) * 2005-02-03 2006-08-10 Robert Bosch Gmbh Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
CN1948932A (zh) * 2005-10-13 2007-04-18 探微科技股份有限公司 制作压力传感器的方法
ATE503988T1 (de) * 2006-02-27 2011-04-15 Auxitrol Sa Spannungsisolierter drucksensorchip
JP4739164B2 (ja) * 2006-10-20 2011-08-03 三菱電機株式会社 車両用エンジンの吸入空気圧力測定用の半導体感歪センサ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252952U (ja) * 1985-09-24 1987-04-02
JPH0254137A (ja) * 1988-08-17 1990-02-23 Toshiba Corp 半導体圧力センサー
JPH07503815A (ja) * 1992-12-05 1995-04-20 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング ケイ素の異方性エッチング法
JPH08250466A (ja) * 1995-02-24 1996-09-27 Internatl Business Mach Corp <Ibm> シリコン基板に深くて垂直な構造を作製する方法
JP2002208708A (ja) * 2001-01-11 2002-07-26 Denso Corp 半導体圧力センサおよびその製造方法
JP2002277337A (ja) * 2001-03-22 2002-09-25 Yamatake Corp 差圧・圧力センサ
JP2007147374A (ja) * 2005-11-25 2007-06-14 Mitsubishi Electric Corp 圧力センサ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2516980A1 (en) * 2009-12-23 2012-10-31 Epcos AG Piezoresistive pressure sensor and process for producing a piezoresistive pressure sensor
JP2013515949A (ja) * 2009-12-23 2013-05-09 エプコス アーゲー 圧力センサおよび圧力センサの製造方法
CN114136527A (zh) * 2021-11-29 2022-03-04 浙江吉利控股集团有限公司 敏感元件和车辆

Also Published As

Publication number Publication date
CN101960276B (zh) 2013-07-03
US20100314701A1 (en) 2010-12-16
KR20100054166A (ko) 2010-05-24
CN101960276A (zh) 2011-01-26
KR101178989B1 (ko) 2012-08-31

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