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WO2009044464A1 - 容量素子及び半導体装置 - Google Patents

容量素子及び半導体装置 Download PDF

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Publication number
WO2009044464A1
WO2009044464A1 PCT/JP2007/069375 JP2007069375W WO2009044464A1 WO 2009044464 A1 WO2009044464 A1 WO 2009044464A1 JP 2007069375 W JP2007069375 W JP 2007069375W WO 2009044464 A1 WO2009044464 A1 WO 2009044464A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
comb tooth
comb
capacitance element
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/069375
Other languages
English (en)
French (fr)
Inventor
Tsuyoshi Sugisaki
Hajime Kurata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to KR1020107003265A priority Critical patent/KR101172783B1/ko
Priority to PCT/JP2007/069375 priority patent/WO2009044464A1/ja
Priority to JP2009535922A priority patent/JP5104872B2/ja
Priority to CN200780100617.9A priority patent/CN101803004B/zh
Publication of WO2009044464A1 publication Critical patent/WO2009044464A1/ja
Priority to US12/720,132 priority patent/US8258600B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10W20/496—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

　基板１０上に形成され、第１の櫛歯を有する第１の櫛形配線１４ａと、基板上に形成され、第１の櫛歯に対向するように配置された第２の櫛歯を有する第２の櫛形配線１４ｂと、互いに対向する第１の電極１６ａ及び第２の電極１６ｂであって、対向する面の方向が第１の櫛歯及び第２の櫛歯の長手方向に対して交差する方向である第１の電極及び第２の電極と、第１の電極と第２の電極との間に形成された第１の誘電体層とを有し、第１の電極は、第１の櫛歯に接続されており、第２の電極は、第２の櫛歯に接続されている。
PCT/JP2007/069375 2007-10-03 2007-10-03 容量素子及び半導体装置 Ceased WO2009044464A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020107003265A KR101172783B1 (ko) 2007-10-03 2007-10-03 용량 소자 및 반도체 장치
PCT/JP2007/069375 WO2009044464A1 (ja) 2007-10-03 2007-10-03 容量素子及び半導体装置
JP2009535922A JP5104872B2 (ja) 2007-10-03 2007-10-03 容量素子及び半導体装置
CN200780100617.9A CN101803004B (zh) 2007-10-03 2007-10-03 电容元件及半导体器件
US12/720,132 US8258600B2 (en) 2007-10-03 2010-03-09 Capacitor element and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/069375 WO2009044464A1 (ja) 2007-10-03 2007-10-03 容量素子及び半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/720,132 Continuation US8258600B2 (en) 2007-10-03 2010-03-09 Capacitor element and semiconductor device

Publications (1)

Publication Number Publication Date
WO2009044464A1 true WO2009044464A1 (ja) 2009-04-09

Family

ID=40525897

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/069375 Ceased WO2009044464A1 (ja) 2007-10-03 2007-10-03 容量素子及び半導体装置

Country Status (5)

Country Link
US (1) US8258600B2 (ja)
JP (1) JP5104872B2 (ja)
KR (1) KR101172783B1 (ja)
CN (1) CN101803004B (ja)
WO (1) WO2009044464A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8242579B2 (en) 2009-05-25 2012-08-14 Infineon Technologies Ag Capacitor structure
JP2012227204A (ja) * 2011-04-15 2012-11-15 Fujitsu Semiconductor Ltd 容量素子および半導体装置
EP2337071A3 (en) * 2009-12-18 2013-03-27 Nxp B.V. Fringe capacitor circuit
JP2020120017A (ja) * 2018-12-28 2020-08-06 國家中山科學研究院 ミリメートル波周波数バンドのためのスタッガード型レイヤ構造を備えたキャパシタアレイ

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090160019A1 (en) * 2007-12-20 2009-06-25 Mediatek Inc. Semiconductor capacitor
US8810002B2 (en) * 2009-11-10 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical metal insulator metal capacitor
US9941195B2 (en) 2009-11-10 2018-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical metal insulator metal capacitor
US9343237B2 (en) 2009-11-10 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical metal insulator metal capacitor
US10283443B2 (en) 2009-11-10 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package having integrated capacitor
US20110261500A1 (en) * 2010-04-22 2011-10-27 Freescale Semiconductor, Inc. Back end of line metal-to-metal capacitor structures and related fabrication methods
US8759893B2 (en) 2011-09-07 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Horizontal interdigitated capacitor structure with vias
US9520358B2 (en) 2014-10-30 2016-12-13 Qualcomm Incorporated Via structure for optimizing signal porosity
SG10201912363TA (en) * 2016-12-02 2020-02-27 Carver Scientific Inc Memory device and capacitive energy storage device
EP3742482B1 (en) 2019-05-24 2023-02-22 Socionext Inc. Integrated-circuit devices and circuitry comprising the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003309181A (ja) * 2002-04-16 2003-10-31 Mitsubishi Electric Corp 半導体装置の製造方法及び、キャパシタの製造方法
JP2005183739A (ja) * 2003-12-19 2005-07-07 Ricoh Co Ltd 容量素子
JP2005197396A (ja) * 2004-01-06 2005-07-21 Renesas Technology Corp 半導体装置
JP2006108455A (ja) * 2004-10-06 2006-04-20 Sony Corp 容量素子及び同容量素子を有する半導体装置
JP2006261455A (ja) * 2005-03-17 2006-09-28 Fujitsu Ltd 半導体装置およびｍｉｍキャパシタ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297524B1 (en) 2000-04-04 2001-10-02 Philips Electronics North America Corporation Multilayer capacitor structure having an array of concentric ring-shaped plates for deep sub-micron CMOS
US6822312B2 (en) 2000-04-07 2004-11-23 Koninklijke Philips Electronics N.V. Interdigitated multilayer capacitor structure for deep sub-micron CMOS
US6570210B1 (en) 2000-06-19 2003-05-27 Koninklijke Philips Electronics N.V. Multilayer pillar array capacitor structure for deep sub-micron CMOS
US6635916B2 (en) 2000-08-31 2003-10-21 Texas Instruments Incorporated On-chip capacitor
WO2005024950A1 (ja) * 2003-09-05 2005-03-17 Fujitsu Limited 半導体装置及びその製造方法
JP3851898B2 (ja) 2003-09-26 2006-11-29 株式会社東芝 容量素子を含む電子回路装置
JP4343085B2 (ja) * 2004-10-26 2009-10-14 Ｎｅｃエレクトロニクス株式会社 半導体装置
KR100695989B1 (ko) 2005-06-30 2007-03-15 매그나칩 반도체 유한회사 반도체소자의 플럭스 캐패시터

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003309181A (ja) * 2002-04-16 2003-10-31 Mitsubishi Electric Corp 半導体装置の製造方法及び、キャパシタの製造方法
JP2005183739A (ja) * 2003-12-19 2005-07-07 Ricoh Co Ltd 容量素子
JP2005197396A (ja) * 2004-01-06 2005-07-21 Renesas Technology Corp 半導体装置
JP2006108455A (ja) * 2004-10-06 2006-04-20 Sony Corp 容量素子及び同容量素子を有する半導体装置
JP2006261455A (ja) * 2005-03-17 2006-09-28 Fujitsu Ltd 半導体装置およびｍｉｍキャパシタ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8242579B2 (en) 2009-05-25 2012-08-14 Infineon Technologies Ag Capacitor structure
DE102010017056B4 (de) * 2009-05-25 2016-01-21 Infineon Technologies Ag Kondensatorstruktur
EP2337071A3 (en) * 2009-12-18 2013-03-27 Nxp B.V. Fringe capacitor circuit
US8594604B2 (en) 2009-12-18 2013-11-26 Nxp, B.V. Fringe capacitor circuit
JP2012227204A (ja) * 2011-04-15 2012-11-15 Fujitsu Semiconductor Ltd 容量素子および半導体装置
JP2020120017A (ja) * 2018-12-28 2020-08-06 國家中山科學研究院 ミリメートル波周波数バンドのためのスタッガード型レイヤ構造を備えたキャパシタアレイ

Also Published As

Publication number Publication date
KR20100033427A (ko) 2010-03-29
JPWO2009044464A1 (ja) 2011-02-03
CN101803004B (zh) 2012-10-10
US20100164067A1 (en) 2010-07-01
US8258600B2 (en) 2012-09-04
KR101172783B1 (ko) 2012-08-10
JP5104872B2 (ja) 2012-12-19
CN101803004A (zh) 2010-08-11

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