[go: up one dir, main page]

WO2008146461A1 - 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 - Google Patents

不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 Download PDF

Info

Publication number
WO2008146461A1
WO2008146461A1 PCT/JP2008/001230 JP2008001230W WO2008146461A1 WO 2008146461 A1 WO2008146461 A1 WO 2008146461A1 JP 2008001230 W JP2008001230 W JP 2008001230W WO 2008146461 A1 WO2008146461 A1 WO 2008146461A1
Authority
WO
WIPO (PCT)
Prior art keywords
storage device
nonvolatile storage
nonvolatile
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/001230
Other languages
English (en)
French (fr)
Inventor
Satoru Fujii
Yoshihiko Kanzawa
Takeshi Takagi
Kazuhiko Shimakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to US12/600,793 priority Critical patent/US8148711B2/en
Priority to JP2008545107A priority patent/JP4299882B2/ja
Publication of WO2008146461A1 publication Critical patent/WO2008146461A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　本発明の不揮発性半導体装置は、(103)と、第２電極(105)と、第1電極(103)と第２電極(105)との間に介在し、両電極(103),(105)間に与えられる電気的信号に基づいて可逆的に抵抗値が変化する抵抗変化層(104)とを備え、この抵抗変化層(104)はタンタルと窒素とを含む酸化物を含む。
PCT/JP2008/001230 2007-05-18 2008-05-16 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 Ceased WO2008146461A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/600,793 US8148711B2 (en) 2007-05-18 2008-05-16 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element
JP2008545107A JP4299882B2 (ja) 2007-05-18 2008-05-16 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-132893 2007-05-18
JP2007132893 2007-05-18

Publications (1)

Publication Number Publication Date
WO2008146461A1 true WO2008146461A1 (ja) 2008-12-04

Family

ID=40074737

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001230 Ceased WO2008146461A1 (ja) 2007-05-18 2008-05-16 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置

Country Status (3)

Country Link
US (1) US8148711B2 (ja)
JP (1) JP4299882B2 (ja)
WO (1) WO2008146461A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009157479A1 (ja) * 2008-06-26 2009-12-30 日本電気株式会社 スイッチング素子およびスイッチング素子の製造方法
US9000506B2 (en) 2010-11-19 2015-04-07 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory element and method for manufacturing the same

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8158967B2 (en) * 2009-11-23 2012-04-17 Micron Technology, Inc. Integrated memory arrays
US8618526B2 (en) * 2010-08-17 2013-12-31 Panasonic Corporation Nonvolatile memory device and manufacturing method thereof
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
CN103238214B (zh) * 2011-12-02 2015-10-21 松下电器产业株式会社 交叉点型电阻变化非易失性存储装置
US8891277B2 (en) 2011-12-07 2014-11-18 Kabushiki Kaisha Toshiba Memory device
US8698119B2 (en) * 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US10186658B2 (en) * 2012-12-26 2019-01-22 Sony Semiconductor Solutions Corporation Memory device and method of manufacturing memory device
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
JP2005159325A (ja) * 2003-11-24 2005-06-16 Samsung Electronics Co Ltd 相変化記憶素子およびその形成方法
WO2007046144A1 (ja) * 2005-10-19 2007-04-26 Fujitsu Limited 抵抗記憶素子及びその製造方法、並びに不揮発性半導体記憶装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2579468B2 (ja) 1986-08-20 1997-02-05 セイコーエプソン株式会社 非線形素子の製造方法
JP2964964B2 (ja) 1989-03-23 1999-10-18 セイコーエプソン株式会社 液晶表示装置の製造方法
US5893621A (en) 1994-07-14 1999-04-13 Citizen Watch Co., Ltd. Liquid crystal display and method of manufacturing the same
US6927120B2 (en) 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Method for forming an asymmetric crystalline structure memory cell
KR100773537B1 (ko) 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
JP2005302876A (ja) 2004-04-08 2005-10-27 Denso Corp トンネル磁気抵抗効果素子およびその製造方法ならびに製造装置
KR100609699B1 (ko) 2004-07-15 2006-08-08 한국전자통신연구원 급격한 금속-절연체 전이 반도체 물질을 이용한 2단자반도체 소자 및 그 제조 방법
JP4830275B2 (ja) 2004-07-22 2011-12-07 ソニー株式会社 記憶素子
JP2007027537A (ja) 2005-07-20 2007-02-01 Sharp Corp 可変抵抗素子を備えた半導体記憶装置
JP2008108807A (ja) 2006-10-24 2008-05-08 Epson Imaging Devices Corp 非線形素子、非線形素子の製造方法、および電気光学装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
JP2005159325A (ja) * 2003-11-24 2005-06-16 Samsung Electronics Co Ltd 相変化記憶素子およびその形成方法
WO2007046144A1 (ja) * 2005-10-19 2007-04-26 Fujitsu Limited 抵抗記憶素子及びその製造方法、並びに不揮発性半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009157479A1 (ja) * 2008-06-26 2009-12-30 日本電気株式会社 スイッチング素子およびスイッチング素子の製造方法
US9000506B2 (en) 2010-11-19 2015-04-07 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory element and method for manufacturing the same

Also Published As

Publication number Publication date
US8148711B2 (en) 2012-04-03
US20100148143A1 (en) 2010-06-17
JP4299882B2 (ja) 2009-07-22
JPWO2008146461A1 (ja) 2010-08-19

Similar Documents

Publication Publication Date Title
WO2008146461A1 (ja) 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
WO2008149484A1 (ja) 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
WO2009050833A1 (ja) 不揮発性記憶素子、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
WO2008126365A1 (ja) 不揮発性記憶装置、不揮発性記憶素子および不揮発性記憶素子アレイ
WO2008081741A1 (ja) 抵抗変化型素子および抵抗変化型記憶装置
WO2008099863A1 (ja) 半導体，半導体装置及び相補型トランジスタ回路装置
WO2008126366A1 (ja) 抵抗変化型素子、不揮発性スイッチング素子、および抵抗変化型記憶装置
WO2008142919A1 (ja) 可変抵抗素子とその製造方法及び不揮発性半導体記憶装置
WO2009069252A1 (ja) 不揮発性記憶装置およびその製造方法
WO2008149605A1 (ja) 抵抗変化素子およびこれを備えた半導体装置
WO2012024544A3 (en) Variable resistance memory element and fabrication methods
WO2009075073A1 (ja) 不揮発性記憶装置およびその製造方法
WO2010048408A3 (en) Carbon-based memory elements exhibiting reduced delamination and methods of forming the same
EP1710840A3 (en) Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
EP1858074A3 (en) Nonvolatile memory device using oxygen-deficient metal oxide layer and method of manufacturing the same
TW200638419A (en) Electric element, memory device, and semiconductor integrated circuit
WO2009057262A1 (ja) 不揮発性半導体記憶装置およびその製造方法
WO2009050861A1 (ja) 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
TW200703619A (en) Semiconductor integrated device
WO2009072201A1 (ja) 抵抗変化素子とその製造方法、及び抵抗変化素子を用いた半導体記憶装置
WO2009128669A3 (ko) 발광 소자 및 그 제조방법
WO2008111188A1 (ja) 半導体装置及びその製造方法
WO2007130729A3 (en) Method of forming a semiconductor device and structure thereof
WO2008102718A1 (ja) 半導体記憶装置
WO2009041041A1 (ja) 不揮発性記憶素子及び不揮発性半導体記憶装置、並びにそれらの読み出し方法及び書き込み方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2008545107

Country of ref document: JP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08751748

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12600793

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08751748

Country of ref document: EP

Kind code of ref document: A1