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WO2008137625A2 - Procédé et système de gestion de puissance adaptative - Google Patents

Procédé et système de gestion de puissance adaptative Download PDF

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Publication number
WO2008137625A2
WO2008137625A2 PCT/US2008/062336 US2008062336W WO2008137625A2 WO 2008137625 A2 WO2008137625 A2 WO 2008137625A2 US 2008062336 W US2008062336 W US 2008062336W WO 2008137625 A2 WO2008137625 A2 WO 2008137625A2
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
supply voltage
reference transistor
temperature
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2008/062336
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English (en)
Other versions
WO2008137625A3 (fr
Inventor
Sung-Ki Min (Nmi)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suvolta Inc
Original Assignee
DSM Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/113,323 external-priority patent/US20080272828A1/en
Application filed by DSM Solutions Inc filed Critical DSM Solutions Inc
Priority to CN200880014619A priority Critical patent/CN101675394A/zh
Priority to JP2010506665A priority patent/JP2010526380A/ja
Publication of WO2008137625A2 publication Critical patent/WO2008137625A2/fr
Publication of WO2008137625A3 publication Critical patent/WO2008137625A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators

Definitions

  • This disclosure relates in general to electronic circuits and more particularly to a method and system for adaptive power management for integrated circuits, including enhancement JFET integrated circuits.
  • transistors and other semiconductor devices have become a fundamental building block for a wide range of electronic components.
  • One or more operating characteristics of a transistor may be affected by temperature changes and process variations.
  • transistors may exhibit inconsistent performance across the range of operating temperatures and process variations. Such inconsistent performance can lead to excess power consumption and/or other operational inefficiencies.
  • Advanced transistor devices can have a large positive temperature coefficient with respect to drive current. This may be a disadvantage in high performance chip design with a fixed supply voltage scheme. The lowest performance may happen in the lowest temperature when the drive current is the lowest. If a higher supply voltage is used, like 0.55 V instead of 0.5 V, the performance may be improved in low temperature. But at high temperature this can unnecessarily waste power and potentially cause thermal problems.
  • JFET enhancement mode junction field effect transistor
  • the supply voltage may be adaptively adjusted using temperature sensing. At high chip temperature, the supply voltage can be lowered. At low chip temperature, the supply voltage can be raised so 078023.0236
  • the drive current can be kept relatively constant across a range of temperatures.
  • the supply voltage can be lower for a given performance target at higher temperature, the power dissipation at higher temperature is lower, resulting in advantages in thermal design of the chip and packaging.
  • a system comprises an integrated circuit comprising one or more transistors that receive a supply voltage.
  • the system also includes a reference transistor operable to receive a constant current and produce a reference voltage that varies according to temperature and process variations, wherein the reference transistor behaves similarly to at least one of the one or more transistors with respect to temperature or process variations.
  • the system also includes a comparator operable to compare the reference voltage with the received supply voltage and produce an output based at least in part on the difference between the reference voltage and the received supply voltage.
  • the system further includes a controller operable to adjust the received supply voltage based at least in part on the output of the comparator.
  • a method in accordance with another embodiment of the present disclosure, includes providing a constant current to a reference transistor. The method also includes comparing a voltage associated with the reference transistor to a supply voltage of an integrated circuit, wherein the voltage associated with the reference transistor increases when a temperature associated with the reference transistor decreases and decreases when a temperature associated with the reference transistor increases, and wherein the voltage associated with the reference transistor varies according to temperature at a rate of approximately minus 2 millivolts per degree
  • the method further includes adjusting the supply voltage in response to a change in the voltage associated with the reference transistor.
  • substantially consistent performance can be 078023.0236
  • on-chip structures may be used to measure temperature.
  • power dissipation may be decreased.
  • FIGURE 1 illustrates a block diagram of an example system for adaptive power management
  • FIGURE 2 illustrates current and voltage characteristics of a pn-junction at different temperatures
  • FIGURE 3 illustrates an example JFET device that may be used in a digital logic circuit
  • FIGURE 4 illustrates one example embodiment of a temperature-sensing device for use in an adaptive power management system
  • FIGURE 5 illustrates an example power management system
  • FIGURE 6 is a flowchart illustrating one example method for adaptive power management.
  • FIGURE 1 illustrates a block diagram of an example system 10 for adaptive power management.
  • the components of system 10 may be situated or connected in any suitable arrangement.
  • one or more advanced transistor devices may have a positive temperature coefficient. Lower performance may occur at lower temperatures, and higher performance may occur at higher temperatures.
  • Adaptive power management system 10 may be used to sense a 078023.0236
  • System 10 comprises digital logic 12, voltage source 14, temperature sensor 16, controller 18, and feedback loop 20.
  • Digital logic 12 can be located in an integrated circuit or in any suitable location. Digital logic 12 may comprise one or more transistors or other semiconductor components operable to perform one or more functions. In certain embodiments, digital logic 12 can be comprised of one or more junction field effect transistors (JFETs). Some JFETs may have low operating voltages and low threshold voltages. In some embodiments, operating voltages can be 0.5 volts or lower.
  • JFETs junction field effect transistors
  • a system can be used to increase or decrease the supply voltage as the temperature changes or process variations occur to ensure a consistent performance of the transistor across a wide range of temperatures or process variations.
  • An adaptive power management system like system 10, may be used to decrease the supply voltage as the temperature at or near digital logic 12 increases, and increase the supply voltage as the temperature at or near digital logic 12 decreases. This system can also lead to reduced power consumption while maintaining consistent performance, such as consistent operating speeds and drive current across a range of temperatures.
  • On-chip structures may be used to read the temperature near digital logic 12.
  • Voltage source 14 comprises any suitable circuitry operable to provide one or more voltages to digital logic 12.
  • voltage source 14 can provide a voltage of approximately 0.3 to 0.7 volts to digital logic 12 to power one or more transistors or other semiconductor components.
  • voltage source 14 provides a voltage to a gate terminal of one or more transistors within digital logic 12, such as in enhancement mode JFETs.
  • voltage source 14 may provide a voltage to digital logic 12, and suitable circuitry within digital logic 12 may convert that voltage to a higher and/or lower voltage for use within digital logic 12. 078023.0236
  • Temperature sensor 16 comprises any suitable component or set of components operable to detect, sense, or otherwise respond to one or more temperature changes in or near digital logic 12.
  • temperature sensor 16 may comprise an on-chip semiconductor structure, such as a transistor or diode used for sensing purposes.
  • temperature sensor 16 may comprise a diode that reacts to temperature changes. The voltage across a pn-junction of a diode may change with temperature changes, and this voltage can be used in a feedback loop, such as feedback loop 20, to adjust the voltage supplied by voltage source 14.
  • Temperature sensor 16 could also comprise a reference transistor that responds to a change in temperature. The response of the reference transistor may be sensed and used to adjust the voltage supplied by voltage source 14.
  • the reference transistor may be identical to at least one of the transistors in digital logic 12.
  • the reference transistor may comprise an enhancement mode JFET that operates with an operating voltage of approximately 0.5 volts.
  • Controller 18 comprises any suitable combination of hardware, software, and firmware that adjusts the voltage provided by voltage source 14. Controller 18 may adjust voltage source 14 in response to one or more signals from temperature sensor 16. In certain embodiments, controller 18 can comprise a part of a feedback loop.
  • Feedback loop 20 comprises temperature sensor 16, controller 18, and voltage source 14. Feedback loop 20 may be used to measure and then adjust one or more voltages associated with digital logic 12 when the temperature changes. Feedback loop 20 may adjust a voltage in real time or periodically at set intervals.
  • System 10 may also compensate for process or voltage variations in certain embodiments.
  • a voltage provided by voltage source 14 may fluctuate slightly due to device imperfections or limitations. These fluctuations could, in turn, raise or lower the temperature of one or more devices within digital logic 12.
  • Temperature sensor 16 could detect these temperature changes and controller 18 could use that information to alter the voltage provided by voltage source 14.
  • System 10 can thus compensate for fluctuations or variations in voltage source 14.
  • System 10 may also, in certain embodiments, compensate for process variations within one or more semiconductor devices. Process variations may cause 078023.0236
  • FIGURE 2 illustrates the current and voltage characteristics of a pn-j unction of a low-power JFET device at two example temperatures.
  • the pn-junction diode voltage decreases by approximately 2 mV/°C when the current is constant in certain embodiments.
  • Constant current is represented on the graph by a horizontal line. As shown on the graph, at a higher temperature the current/voltage curve moves to the left, resulting in a lower voltage if the current is constant. With a constant current, at a higher temperature the voltage will be lower. This voltage can be monitored and used for thermal management.
  • FIGURE 3 illustrates an example JFET device 90 that may be used in a digital logic circuit.
  • JFET device 90 is not to scale and may comprise other structures and still fall within the scope of this disclosure.
  • Device 90 comprises a p-type substrate
  • n-type channel 98 source 94, drain 95, gate 92, and pn-junction diodes 96.
  • forward biasing of the diode can be prevented.
  • strong forward biasing of the pn-junction between gate 92 and source 94 can make the devices non- operating. Controlling the current through pn-junction diode 96 can prevent this. At the same time, the speed difference between hot and cold temperature operation can become smaller.
  • FIGURE 4 illustrates one example embodiment of temperature-sensor 16 for use in adaptive power management system 10.
  • Sensor 16 may comprise any component or number of components operable to measure a temperature at or near one or more semiconductor devices. In certain embodiments, multiple sensors may be implemented to have different optimal supply voltages at different specific locations on a chip.
  • Sensor 16 comprises reference transistor 54.
  • reference transistor 54 comprises a source terminal 72 and a drain terminal 74 connected to a 078023.0236
  • Reference transistor 54 also comprises a gate terminal 70 connected to a constant current source 52. Although not shown in FIGURE 4, reference transistor 54 may also comprise a body terminal, which may be connected to ground. In the illustrated embodiment, reference transistor 54 is a p-type JFET. In certain embodiments, reference transistor 54 should be similar to at least one of the one or more transistors that comprise digital logic 12. If reference transistor 54 reacts similarly to temperature changes as the transistors in digital logic 12, then reference transistor 54 can be monitored and used as a part of feedback loop 20 to adjust voltage source 14. A voltage associated with reference transistor 54, such as the voltage across a gate pn-junction, may change as the temperature changes, and this change may be used in feedback loop 20 to modify voltage source 14 to compensate for the temperature changes.
  • Constant current source 52 operates to provide a constant current to gate terminal 70 of reference transistor 54.
  • Constant current source 52 comprises any component or system of components operable to perform this function, such as a simple transistor current source.
  • Constant current source 52 may be connected to one or more voltage nodes, such as node 58, which provides power to constant current source 52.
  • Sensor 16 may also comprise comparator 60.
  • Comparator 60 may be used as part of a feedback loop (positive or negative) that adjusts voltage source 14 to compensate for one or more temperature changes.
  • comparator 60 comprises input node 66, which receives as input the voltage at gate terminal 70 of reference transistor 54.
  • Comparator 60 also comprises input node 64, which receives as input a supply voltage 62 used by one or more transistors in digital logic circuit 12. In certain embodiments, this supply voltage 62 is applied to a gate terminal of one or more JFETs within digital logic 12.
  • Supply voltage 62 may be output from voltage source 14, as illustrated in FIGURE 4, or may come from within digital logic 12.
  • Comparator 60 compares supply voltage 62 to the voltage at gate terminal 70 of reference transistor 54 which is coupled to input node 66. Comparator 60 is operable to output a voltage to node 68 based at least in part on the difference between supply voltage 62 and the reference voltage at input node 66.
  • the output voltage at node 68 can be fed to controller 18 and used in feedback loop 20 to alter the supply voltage 62 until the two comparator input voltages (at input nodes 64 and 66) fall within an acceptable range of one another.
  • Controller 18 may receive the output voltage at node 68 and adjust voltage source 14 either up or down based at least in part on the value of the voltage at node 68. In certain embodiments, this adjustment alters supply voltage 62 until it is approximately identical to the voltage at gate terminal 70 of reference transistor 54.
  • sensor 16 works as follows.
  • Reference transistor 54 receives a constant current from constant current source 52.
  • Reference transistor 54 comprises a pn-junction between its gate terminal and a channel of the transistor. Current from the constant current source 52 flows through this pn-junction and creates a voltage at the gate terminal. If the temperature at or near reference transistor 54 is constant, and the current from constant current source 52 is constant, then the voltage at gate terminal 70 of reference transistor 54 will also be relatively constant.
  • the pn-junction diode voltage of reference transistor 54 decreases at approximately 2 mV/°C when the current is constant.
  • This relationship can be used to alter voltage source 14 in response to one or more temperature changes. For example, when the pn-junction diode voltage decreases, comparator 60 receives this decreased voltage at input node 66. Supply voltage 62 will now be larger than the transistor reference voltage at node 66, and comparator 60 will output a voltage at node 68 based at least in part on this difference. The voltage at node 68 can then be used by other components, such as controller 18, to adaptively adjust voltage source 14 to decrease supply voltage 62 until it is approximately equal to the reference voltage at gate terminal 70 of reference transistor 54.
  • system 10 can be used to lower supply voltage 62, which may be used to operate one or more transistors in digital logic 12. This can be done to slow down the transistors as the temperature increases or reduce the drive current of the transistors, which can prevent damage to the transistors and also prevent forward biasing of the transistors. Also, since the transistors are operating with a lower supply voltage 62, power consumption may be reduced. In contrast, as the temperature decreases, the speed or drive current of the transistors may also decrease.
  • the present disclosure can be used to raise supply voltage 62 to increase the speed or drive current of the transistors to ensure consistent performance across a wide range of temperatures.
  • a chip temperature range of -10 0 C to 125 °C can lead to adaptive adjustments of up to 400 mV in the supply voltage.
  • a supply voltage may be adjusted to any value between 300 mV and 700 mV depending on temperature changes.
  • Sensor 16 also operates to keep the gate pn-junction voltage of transistors within digital logic 12 below a cut-in voltage. As temperature increases, the cut-in voltage is reduced, and there is a risk that the transistors may become forward biased. However, supply voltage 62 is reduced when the temperature increases, which decreases the risk that the transistors will become forward biased. Conversely, as the temperature decreases, the cut-in voltage is increased, and thus supply voltage 62 can be increased without the risk of forward biasing the transistors.
  • FIGURE 5 illustrates an example power management system 100.
  • the components of power management system 100 may be situated or connected in any suitable arrangement.
  • System 100 generates a control signal 118 based at least in part on a temperature change to adjust a supply voltage.
  • Power management system 100 comprises pulse width modulator (PWM) 102, sensor 104, digital logic 106, transistor 110 and 112, inductor 114, capacitor 116, and isothermal environment 122.
  • PWM pulse width modulator
  • sensor 104 can be used to detect a change in temperature near digital logic 106.
  • Sensor 104 and digital logic 106 exist in 078023.0236
  • isothermal environmental 122 which means that the temperature at sensor 104 is at or near the temperature of digital logic 106. Because they are near the same temperature, the temperature changes detected by sensor 104 may be used to adjust the voltage at node 126 supplied to digital logic 106.
  • control signal 118 is sent to PWM 102.
  • PWM 102 uses control signal 118 to determine how to adjust the voltage supplied to digital logic 106.
  • PWM 102 can output one or more signals based at least in part on control signal 118. The signals output by PWM 102 may be used to selectively turn transistors 110 and 112 on and off to produce an appropriate voltage at node 124.
  • Transistor 110 is coupled to external voltage supply 108 and node 124.
  • Transistor 112 is coupled to node 124 and ground node 120.
  • the voltage produced at node 124 can be filtered by inductor 114 and capacitor 116. This L-C filter may be used to reduce the voltage ripple at node 126.
  • PWM 102 uses control signal 118 to determine whether the voltage supplied to digital logic 106 at node 126 should be adjusted up or down. The output of PWM 102 creates an appropriate voltage at node 124, and this voltage is filtered and then sent to node 126, where it can be used by digital logic 106.
  • power management system 100 is operable to adjust a supply voltage for digital logic 106 based at least in part on a temperature measured near digital logic 106 in order to maintain consistent performance across a range of temperatures.
  • FIGURE 6 is a flowchart illustrating one example method 300 for an adaptive power management system 10.
  • the illustrated method can adjust a voltage source 14 in response to one or more temperature changes.
  • the steps illustrated in FIGURE 6 may be combined, modified, or deleted where appropriate. Additional steps may also be added to the example operation. Furthermore, the described steps may be performed in any suitable order.
  • step 310 a constant current is provided to reference transistor 54.
  • reference transistor 54 is similar to at least one of one or more transistors within digital logic 12.
  • Reference transistor 54 also comprises a voltage that adjusts to one or more temperature changes at approximately -2 mV/°C. 078023.0236
  • a voltage of reference transistor 54 that reacts to a change in temperature is monitored.
  • this voltage can be a voltage at a gate terminal 70 of reference transistor 54.
  • the reference voltage can be monitored in a variety of ways. In some embodiments, a pn-junction voltage that changes with temperature may be monitored.
  • step 330 the reference voltage of reference transistor 54 can be compared to supply voltage 62 for digital logic 12.
  • a comparator 60 may be used that accepts as input the reference voltage of reference transistor 54 and supply voltage 62.
  • Comparator 60 may output a value based at least in part on the difference between the reference voltage of reference transistor 54 and supply voltage 62. This value may be used in feedback loop 20 to adjust supply voltage 62.
  • step 340 the reference voltage of reference transistor 54 and supply voltage 62 are compared to determine if they are approximately equal. If they are approximately equal, then no adjustment needs to be done, as illustrated in step 350. If the voltages are not approximately equal, then the method continues to step 360.
  • approximately equal in this case refers to the voltages being within a range of one another that is acceptable for the desired operation of the system. This range may vary depending on the details of digital logic 12 or any other circuit being monitored.
  • the reference voltage of reference transistor 54 and supply voltage 62 are compared to determine which is greater. If the reference voltage is greater, the temperature of the circuit must have decreased, and supply voltage 62 can be increased in step 370 so that the speed and drive current of the transistors in digital logic 12 may also increase. This increase in supply voltage 62 can help to counter the effect of the decreased temperature, providing a more consistent performance for the transistors in digital logic 12 across a range of temperatures.
  • the temperature of the circuit must have increased, and supply voltage 62 can be decreased in step 380 to also decrease the speed and drive current of the transistors in digital logic 12. This can prevent excess power consumption by the transistors. It can also prevent forward biasing of one or more transistors in digital logic 12. It also may 078023.0236
  • the output of comparator 60 may be used as an input in feedback loop 20 that continually adjusts supply voltage 62 until it approximately matches the voltage of reference transistor 54. As the reference voltage of reference transistor 54 increases, supply voltage 62 can be increased. As the reference voltage of reference transistor 54 decreases, supply voltage 62 can be decreased. Steps 310-380 can be continually performed in a loop so that supply voltage 62 can be adaptively adjusted to any changes in temperature. The adjustments to supply voltage 62 can be made at any suitable time intervals.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Power Sources (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Dc-Dc Converters (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

L'invention comporte un système qui comporte un circuit intégré comportant un ou plusieurs transistors qui reçoivent une tension d'alimentation. Le système comprend également un transistor de référence utilisable pour recevoir un courant constant et pour produire une tension de référence qui varie selon des variations de température ou de processus, le transistor de référence se comportant de manière similaire à au moins un des transistors par rapport à des variations de température ou de processus. Le système comprend également un comparateur utilisable pour comparer la tension de référence à la tension d'alimentation reçue et pour produire une sortie sur la base au moins en partie de la différence entre la tension de référence et la tension d'alimentation reçue. Le système comprend en outre un dispositif de commande utilisable pour ajuster la tension d'alimentation reçue sur la base au moins en partie de la sortie du comparateur.
PCT/US2008/062336 2007-05-03 2008-05-02 Procédé et système de gestion de puissance adaptative Ceased WO2008137625A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880014619A CN101675394A (zh) 2007-05-03 2008-05-02 自适应功率管理方法和系统
JP2010506665A JP2010526380A (ja) 2007-05-03 2008-05-02 適応電力管理のための方法及びシステム

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US91585007P 2007-05-03 2007-05-03
US60/915,850 2007-05-03
US95521407P 2007-08-10 2007-08-10
US60/955,214 2007-08-10
US12/113,323 2008-05-01
US12/113,323 US20080272828A1 (en) 2007-05-03 2008-05-01 Method and system for adaptive power management

Publications (2)

Publication Number Publication Date
WO2008137625A2 true WO2008137625A2 (fr) 2008-11-13
WO2008137625A3 WO2008137625A3 (fr) 2008-12-24

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PCT/US2008/062336 Ceased WO2008137625A2 (fr) 2007-05-03 2008-05-02 Procédé et système de gestion de puissance adaptative

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JP (1) JP2010526380A (fr)
CN (1) CN101675394A (fr)
TW (1) TW200903244A (fr)
WO (1) WO2008137625A2 (fr)

Cited By (1)

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JP5283518B2 (ja) * 2009-01-19 2013-09-04 新電元工業株式会社 電力変換装置
JP5296136B2 (ja) * 2011-04-11 2013-09-25 株式会社ソニー・コンピュータエンタテインメント 電子機器、その制御方法、及び半導体集積回路
EP2698684B1 (fr) 2011-04-11 2020-02-19 Sony Interactive Entertainment Inc. Circuit intégré à semi-conducteurs
CN103543811B (zh) * 2012-07-10 2017-04-12 宏碁股份有限公司 中央处理器控制方法
US8975954B2 (en) * 2013-01-08 2015-03-10 Qualcomm Incorporated Method for performing adaptive voltage scaling (AVS) and integrated circuit configured to perform AVS
CN111198590B (zh) * 2019-12-26 2022-02-18 苏州浪潮智能科技有限公司 一种服务器供电低温控制的方法及装置
CN113126736A (zh) * 2019-12-31 2021-07-16 国民技术股份有限公司 一种芯片电源管理方法及电路

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EP0880086A1 (fr) * 1997-04-24 1998-11-25 Motorola, Inc. Circuit de commande et procédé pour un dispositif sensible à la température
US6005408A (en) * 1997-07-31 1999-12-21 Credence Systems Corporation System for compensating for temperature induced delay variation in an integrated circuit

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JP2010259324A (ja) * 2009-04-27 2010-11-11 General Electric Co <Ge> 非絶縁ゲート半導体デバイスのゲート駆動回路

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TW200903244A (en) 2009-01-16
JP2010526380A (ja) 2010-07-29
CN101675394A (zh) 2010-03-17
WO2008137625A3 (fr) 2008-12-24

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