[go: up one dir, main page]

WO2008133162A1 - 表示装置及びその製造方法 - Google Patents

表示装置及びその製造方法 Download PDF

Info

Publication number
WO2008133162A1
WO2008133162A1 PCT/JP2008/057479 JP2008057479W WO2008133162A1 WO 2008133162 A1 WO2008133162 A1 WO 2008133162A1 JP 2008057479 W JP2008057479 W JP 2008057479W WO 2008133162 A1 WO2008133162 A1 WO 2008133162A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
opening section
metal
film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057479
Other languages
English (en)
French (fr)
Inventor
Masaki Yamanaka
Hiromi Katoh
Christopher Brown
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to CN2008800035855A priority Critical patent/CN101595514B/zh
Priority to US12/595,322 priority patent/US8106401B2/en
Publication of WO2008133162A1 publication Critical patent/WO2008133162A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

　フォトダイオードの出力特性のばらつきが抑制された表示装置及びその製造方法を提供する。アクティブマトリクス基板（２）と、フォトダイオード（６）とを備えた表示装置を作成する。先ず、ガラス（１２）基板上に、シリコン膜（８）、シリコン膜（８）を覆う層間絶縁膜（１５）を順に形成する。次に、金属膜を形成し、それにエッチングを行って、シリコン膜（８）を横切る金属配線（１０，１１）を形成する。そして、ｐ層（９ａ）の形成予定領域と重なる部分を露出させる開口部（２４ａ）を備え、且つ、開口部（２４ａ）の一部が金属配線（１０）で形成されているマスクを用いて、ｐ型の不純物をイオン注入する。更に、ｎ層（９ｃ）の形成予定領域と重なる部分を露出させる開口部（２５ｂ）を備え、且つ、開口部（２５ａ）の一部が金属配線（１１）で形成されているマスクを用いて、ｎ型の不純物をイオン注入する。
PCT/JP2008/057479 2007-04-25 2008-04-17 表示装置及びその製造方法 Ceased WO2008133162A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800035855A CN101595514B (zh) 2007-04-25 2008-04-17 显示装置及其制造方法
US12/595,322 US8106401B2 (en) 2007-04-25 2008-04-17 Display device including metal lines provided above photodiode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007115913 2007-04-25
JP2007-115913 2007-04-25

Publications (1)

Publication Number Publication Date
WO2008133162A1 true WO2008133162A1 (ja) 2008-11-06

Family

ID=39925618

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057479 Ceased WO2008133162A1 (ja) 2007-04-25 2008-04-17 表示装置及びその製造方法

Country Status (3)

Country Link
US (1) US8106401B2 (ja)
CN (1) CN101595514B (ja)
WO (1) WO2008133162A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032632A1 (ja) * 2008-09-19 2010-03-25 株式会社 東芝 光検出素子、光検出装置、及び、光検出機能付き表示装置
US20120058589A1 (en) * 2009-05-20 2012-03-08 Sharp Kabushiki Kaisha Method of producing semiconductor device
WO2012046628A1 (ja) * 2010-10-06 2012-04-12 シャープ株式会社 光センサ及び該光センサを備えた液晶パネル
JP2024513414A (ja) * 2021-03-30 2024-03-25 華為技術有限公司 ディスプレイパネル、ディスプレイモジュール、および電子デバイス

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110194036A1 (en) * 2008-10-09 2011-08-11 Sharp Kabushiki Kaisha Photodiode, photodiode-equipped display device, and fabrication method therefor
US20120086019A1 (en) * 2009-06-16 2012-04-12 Sharp Kabushiki Kaisha Substrate for display panel, and display device
JP2012019146A (ja) * 2010-07-09 2012-01-26 Sony Corp 撮像装置、表示撮像装置および電子機器
CN113299674B (zh) 2021-05-08 2022-09-09 武汉华星光电技术有限公司 阵列基板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022690A (ja) * 1988-06-15 1990-01-08 Nec Corp 赤外線センサの製造方法
JP2001244445A (ja) * 2000-02-28 2001-09-07 Fujitsu Ltd 光半導体装置及びその製造方法
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法
JP2006003857A (ja) * 2003-08-25 2006-01-05 Toshiba Matsushita Display Technology Co Ltd 表示装置および光電変換素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001017319A1 (en) * 1999-09-01 2001-03-08 Osram Opto Semiconductors Gmbh & Co. Ohg Organic electroluminescent device and production method
US20060113612A1 (en) * 2002-06-19 2006-06-01 Kailash Gopalakrishnan Insulated-gate semiconductor device and approach involving junction-induced intermediate region
KR100669270B1 (ko) 2003-08-25 2007-01-16 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 표시 장치 및 광전 변환 소자
DE102006022126B4 (de) * 2006-05-11 2015-04-09 Infineon Technologies Ag Verfahren zum Herstellen eines elektronischen Bauelementes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022690A (ja) * 1988-06-15 1990-01-08 Nec Corp 赤外線センサの製造方法
JP2001244445A (ja) * 2000-02-28 2001-09-07 Fujitsu Ltd 光半導体装置及びその製造方法
JP2006003857A (ja) * 2003-08-25 2006-01-05 Toshiba Matsushita Display Technology Co Ltd 表示装置および光電変換素子
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032632A1 (ja) * 2008-09-19 2010-03-25 株式会社 東芝 光検出素子、光検出装置、及び、光検出機能付き表示装置
US20120058589A1 (en) * 2009-05-20 2012-03-08 Sharp Kabushiki Kaisha Method of producing semiconductor device
US8466020B2 (en) 2009-05-20 2013-06-18 Sharp Kabushiki Kaisha Method of producing semiconductor device
WO2012046628A1 (ja) * 2010-10-06 2012-04-12 シャープ株式会社 光センサ及び該光センサを備えた液晶パネル
US8848126B2 (en) 2010-10-06 2014-09-30 Sharp Kabushiki Kaisha Optical sensor comprising a photodiode having a p-type semiconductor region, an intrinsic semiconductor region, and an n-type semiconductor region
JP2024513414A (ja) * 2021-03-30 2024-03-25 華為技術有限公司 ディスプレイパネル、ディスプレイモジュール、および電子デバイス
JP7776527B2 (ja) 2021-03-30 2025-11-26 華為技術有限公司 ディスプレイパネル、ディスプレイモジュール、および電子デバイス

Also Published As

Publication number Publication date
US20100140631A1 (en) 2010-06-10
CN101595514A (zh) 2009-12-02
CN101595514B (zh) 2011-11-30
US8106401B2 (en) 2012-01-31

Similar Documents

Publication Publication Date Title
WO2008133162A1 (ja) 表示装置及びその製造方法
WO2009037955A1 (ja) 太陽電池の製造方法
WO2009075244A1 (ja) 太陽電池の製造方法
EP2996163A3 (en) Photoelectric conversion device and manufacturing method thereof
WO2008156516A3 (en) Methods of fabricating silicon carbide power devices by at least partially removing an n-type silicon carbide substrate, and silicon carbide power devices so fabricated
TW200731412A (en) Semiconductor device having a trench gate the fabricating method of the same
WO2006086644A8 (en) Back-illuminated imaging device and method of fabricating same
US11264594B2 (en) Display substrate and manufacturing method thereof, and display device
WO2010071341A3 (en) Solar cell and method of manufacturing the same
TW200715629A (en) Thin film transistor and organic electroluminescence display device
WO2010013956A3 (en) Solar cell, method of manufacturing the same, and solar cell module
SG162653A1 (en) Method for fabricating a semiconductor substrate and semiconductor substrate
WO2011091959A3 (de) Verfahren zur lokalen hochdotierung und kontaktierung einer halbleiterstruktur, welche eine solarzelle oder eine vorstufe einer solarzelle ist
WO2009075257A1 (ja) シリコン基板とその製造方法
TW200713493A (en) Semiconductor device and manufacturing method thereof
KR20130048948A (ko) 양면수광형 태양전지 및 그 제조방법
WO2009054115A1 (ja) ＳＯＩ（Silicon on insulator）構造の半導体装置およびその製造方法
CN107240611B (zh) 一种光电探测器件及其制备方法、触控基板及显示面板
TW200640004A (en) Solid-state imaging device and method for manufacturing the same
TW200625648A (en) Semiconductor device and method of manufacturing the same
WO2009056478A3 (en) Strained semiconductor-on-insulator by si:c combined with porous process
CN101657902B (zh) 光传感器和显示装置
WO2009022592A1 (ja) ソフトリカバリーダイオード
TW200733367A (en) Manufacturing method of semiconductor device
US20090072248A1 (en) Light emitting display device and method of fabricating the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880003585.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08740549

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12595322

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08740549

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP